Abstract: In order to provide a non-lead piezoelectric film having high crystalline orientation, low dielectric loss, high polarization-disappear temperature, and high piezoelectric constant, the present invention is a piezoelectric film comprising: a NaxM1-x layer 13 having a (001) orientation only; and a (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer 15 having a (001) orientation only. The (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer 15 is formed on the NaxM1-x layer 13. M represents Pt, Ir, or PtIr. Q represents Fe, Co, Zn0.5Ti0.5, or Mg0.5Ti0.5. x represents a value of not less than 0.002 and not more than 0.02. ? represents a value of not less than 0.20 and not more than 0.50.

Abstract: A piezoelectric material contains a main component containing a perovskite-type metal oxide having the formula (1); a first auxiliary component composed of Mn; and a second auxiliary component composed of Bi or Bi and Li, wherein the Mn content is 0.04 parts by weight or more and 0.400 parts by weight or less on a metal basis per 100 parts by weight of the metal oxide, the Bi content is 0.042 parts by weight or more and 0.850 parts by weight or less on a metal basis per 100 parts by weight of the metal oxide, and the Li content is 0.028 parts by weight or less (including 0 parts by weight) on a metal basis per 100 parts by weight of the metal oxide. (Ba1-xCax)a(Ti1-y-zSnyZrz)O3??(1) (wherein 0?x?0.080, 0.013?y?0.060, 0?z?0.040, and 0.986?a?1.020.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material according to the present invention includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is equal to or less than 0.0012 parts by weight (including 0 parts by weight), and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.025?y?0.085, 0?z?0.02, and 0.986?a?1.02).

Abstract: A liquid ejecting head includes a piezoelectric element including a first electrode, a piezoelectric layer overlying the first electrode with an orientation control layer therebetween, and a second electrode overlying the piezoelectric layer. The piezoelectric layer is made of a complex oxide having a perovskite structure including an A site containing lead and a B site containing zirconium and titanium. The orientation control layer is made of a complex oxide having a perovskite structure including an A site containing lanthanum and a B site containing nickel and titanium.

Abstract: A piezoelectric material includes a metal oxide represented by general formula (1) below, a Mn content is 0.04 parts by weight or more and 0.36 parts by weight or less, a Li content ? is 0.0013 parts by weight or more and 0.0280 parts by weight or less, a Bi content ? is 0.042 parts by weight or more and 0.850 parts by weight or less, and the contents ? and ? satisfy 0.5?(?·MB)/(?·ML)?1 (Ba1-xCax)a(Ti1-y-zZrySnz) O3 (1) (where x, y, z, and a satisfy 0.09?x?0.30, 0.025?y?0.074, 0?z?0.02, and 0.986?a?1.02). A piezoelectric material according to an embodiment of the present invention contains no lead, has a low degree of temperature dependency of piezoelectric performance within operation temperature ranges of piezoelectric elements, and good piezoelectric properties.

Abstract: A transducer for generating electrical energy from an expected force includes a single crystal ferroelectric material having a phase transition stress level. Mechanical stress is provided to this crystal at a level approaching the phase transition stress level, such that the expected external force will cause the phase transition. At least two electrodes are joined to the single crystal for receiving electrical energy created by the phase transition. The electrodes can be joined to conditioning and storage circuitry. In further embodiments, the phase transition is induced by an expected temperature change.

Abstract: The present disclosure provides a piezoelectricityity ceramic material. The piezoelectricityity ceramic material includes main components that are represented by a general chemical formula of Pb(Mn1/3Sb2/3)xZryTizO3+awt % WO3 and satisfy the following conditions: 0.02 ?x?0.1, 0.4?y?0.6, 0.4?z?0.6, and 0.5?a?3. Compared to related art, the products provided by the present disclosure have the following advantages: higher temperature stability, simpler production process, shorter production cycle, and convenient for mass production.

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract: A lead-free piezoelectric ceramic composition includes a first crystal phase of alkali niobate/tantalate type perovskite oxide having piezoelectric properties and a second crystal phase of A-Ti—B—O composite oxide (where the element A is an alkali metal; the element B is at least one of Nb and Ta; and the contents of the element A, the element B and Ti are not zero). Examples of the second crystal phase are those represented by A1?xTi1?xB1+xO5, and x preferably satisfies 0?x?0.15.

Abstract: The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a NaxLa1-x+yNi1-yO3-x layer having only an (001) orientation and a (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer having only an (001) orientation. The (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer is formed on the NaxLa1-x+yNi1-yO3-x layer. The character of Q represents Fe, Co, Zn0.5Ti0.5, or Mg0.5Ti0.5 The character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of ? represents a value of not less than 0.20 and not more than 0.50.

Abstract: There is provided a piezoelectric/electrostrictive element 1 comprising a piezoelectric/electrostrictive body 30 made of a piezoelectric/electrostrictive ceramic composition containing Pb(Ni1/3Nb2/3)O3—PbTiO3—PbZrO3 ternary solid solution system composition as the main components, and an electrode disposed on the piezoelectric/electrostrictive body, wherein the ternary solid solution system composition is represented by the following composition formula: (Pb1-xSrx)?{(Ti1-yZry)a(Ni?/3Nb2/3)b(Al?/2Nb1/2)c}O3 (where 0.005?x?0.03, 0.45?y?0.54, 0.58?a?0.91, 0.07?b?0.36, 0.02?c?0.08, 0.97???1.03, 0.97???1.03, 0.97???1.03, and (a+b+c=1.000)).

Abstract: Provided is a piezoelectric element that has a first electrode, a piezoelectric layer provided on the first electrode, and a second electrode provided on the piezoelectric layer, an average grain size of crystal grains aligned in a planar direction within 15° from a (100) plane is less than the average grain size of the crystal grains facing a planar direction inclined by more than 15° from the (100) plane, in a case in which the crystal orientation of the piezoelectric layer is analyzed using an electron beam backscatter diffraction method (EBSD).

Abstract: In the present invention, provided is an organic piezoelectric material specifically exhibiting high orientation and thermal stability as an organic piezoelectric material exhibiting an excellent piezoelectric characteristic and having piezoelectricity and pyroelectricity, which is capable of converting thermal or mechanical simulation into electrical energy, and also provided are an ultrasound probe for which the organic piezoelectric material is used, and an ultrasound image detector thereof. It is a feature that an organic piezoelectric material of the present invention possesses a compound represented by Formula (1) and a base material made of an organic polymeric material, satisfying Expression (1): |C Log P (1)?C Log P (base material)|?3.0 when C Log P values of the compound and the base material are expressed as C Log P (1) and C Log P (base material), respectively.

Abstract: A piezoelectric material contains a perovskite oxynitride expressed by the General Formula: (Ba1-xSrx)(Ti1-3z(Nb1-yTay)3z)(O1-wNw)3. In the formula, x, y, z and w are numerical values satisfying the relationships: 0?x?1, 0?y?1, 0<z<<?, and 0<w?z. Also, z can be 0.1?z?0.2. The piezoelectric material may be in the form of a film having a thickness in the range of 200 nm to 10 ?m that is disposed on a substrate. The perovskite oxynitride may have a tetragonal crystal structure.

Abstract: In a piezoelectric actuator including a substrate, an insulating layer formed on the substrate, an adhesive layer formed on the insulating layer, a Pt lower electrode layer formed on the adhesive layer, and a PZT piezoelectric layer formed on the Pt lower electrode layer, the adhesive layer is made of TiOx having a composition x which is graded so that the composition x on the side of thio insulating layer is larger than the composition x on the side of the Pt lower electrode layer.

Abstract: A piezoelectric ceramic material has the general formula: P1-c-dDcZd(PbO)w where: 0<c?0.025; 0?d?0.05; 0?w?0.05; where P stands for a compound having the formula [Pb1-vAgIv][(Zr1-yTiy)1-uCuIIu]O3, where 0.50?1?y?0.60; 0<u?0.0495; 0?v?0.02, and D stands for a component of the general formula [(M1O)1-p(M2O)p]a[Nb2O5]1-a, where M1 stands for Ba1-tSrt, where 0?t?1, M2 stands for Sr and/or Ca, and 0<p<1 and ?<a<1 and Z stands for a compound of the general formula: Pb(L1Rr)O3 where L is present in the oxidation state II or III, and R is present in the oxidation state VI or V, and: LII is selected from among Fe, Mg, Co, Ni and Cu in combination with RVI=W, where 1=½ and r=½, or LIII is selected from among Fe, Cr and Ga in combination with RV=Nb, Ta or Sb, where 1=½ and r=½, or LIII is selected from among Fe, Cr and Ga in combination with RVI=W, where 1=? and r=?.

Abstract: Piezoelectric fibers include a polypeptide wherein molecules of the polypeptide have electric dipole moments that are aligned such that the piezoelectric fiber provides a piezoelectric effect at an operating temperature. A piezoelectric component provides a plurality of piezoelectric fibers, each comprising an organic polymer. A method of producing piezoelectric fibers includes electrospinning a polymer solution to form a fiber and winding the fiber onto a rotating target in which the rotating target is electrically grounded. An acoustic sensor includes a plurality acoustic transducers, wherein the plurality of acoustic transducers are structured and arranged to detect a corresponding plurality of vector components of an acoustic signal, and at least one of the plurality of acoustic transducers comprises a piezoelectric fiber.

Abstract: Provided are a vibrating body and a vibration wave actuator, which can suppress vibration attenuation along with a reduction in size with an inexpensive structure, to thereby improve vibration efficiency, and can output stable vibration energy. A vibrating body includes: a piezoelectric element including a piezoelectric layer and an electrode layer; a ceramic substrate to which the piezoelectric element is fixed; and a ceramic layer including the same main component as a main component of the ceramic substrate, which is provided between the piezoelectric element and the ceramic substrate, and the piezoelectric element is fixed to the ceramic substrate through intermediation of the ceramic layer.

Abstract: A composite substrate according to the present invention includes a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate. The amorphous layer contains 3 to 14 atomic percent of argon. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element (such as tantalum) of the piezoelectric substrate than the second and third layers. The third layer contains a larger amount of a constituent element (silicon) of the support substrate than the first and second layers. The second layer contains a larger amount of argon than the first and third layers.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: The present invention provides a composite substrate comprising a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer containing argon and joining together the piezoelectric substrate and the support substrate. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element of the piezoelectric substrate than the second and third layers, the third layer contains a larger amount of a constituent element of the support substrate than the first and second layers, and the second layer contains a larger amount of argon than the first and third layers.

Abstract: There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0?x?1, 0?y?1, 0?z?0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract: A piezoelectric material containing a barium bismuth calcium niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. The piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are barium, bismuth, calcium, and niobium; and tungsten. The metal elements satisfy following conditions on a molar basis: when Ba/Nb=a, 0.37?a?0.40, when Bi/Nb=b, 0.020?b?0.065, and when Ca/Nb=c, 0.007?c?0.10. The tungsten content on a metal basis is 0.4 to 2.0 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.

Abstract: A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 ?m and includes a perovskite oxide represented by a general formula (P) given below: (K1-w-x,Aw,Bx)(Nb1-y-z,Cy,Dz)O3??(P), where: 0<w<1.0, 0?x?0.2, 0?y<1.0, 0?z?0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.

Abstract: Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0?x?1, 0?y?1, 0?z?0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.

Abstract: A piezoelectric ceramic composition including a perovskite-type oxide, wherein the perovskite-type oxide has Na, K, Li, Ba and Sr at the A site and Nb, Ta and Zr at the B site, and has a crystal phase transition in a temperature range of ?50 to 150° C., the crystal phase transition being accompanied by an endotherm of no greater than 4 J/g, as well as a piezoelectric element 20 provided with a piezoelectric ceramic 1 that contains the piezoelectric ceramic composition.

Abstract: Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

Abstract: A piezoelectric ceramic that includes barium titanate and 0.04 mass % or more and 0.20 mass % or less manganese relative to barium titanate. The piezoelectric ceramic is composed of crystal grains. The crystal grains include crystal grains A having an equivalent circular diameter of 30 ?m or more and 300 ?m or less and crystal grains B having an equivalent circular diameter of 0.5 ?m or more and 3 ?m or less. The crystal grains A and the crystal grains B individually form aggregates and the aggregates of the crystal grains A and the aggregates of the crystal grains B form a sea-island structure.

Abstract: Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material.

Abstract: Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material.

Abstract: An acoustic wave resonator device comprising a resonant layer that comprises a series of side-by-side areas of first and second dielectric materials. In one embodiment the first dielectric material is a piezoelectric, in particular the first dielectric material can be a piezoelectric and the second dielectric material can be non-piezoelectric. In another embodiment, the first dielectric material is a piezoelectric of first polarity and the second dielectric material is a piezoelectric of opposite polarity or different polarity. Where needed, the resonant layer is supported on a reflector composed of series of layers of high acoustic impedance material(s) alternating with layers of low acoustic impedance material(s). For example, the reflector comprises AlN, Al2O3, Ta2O5, HfO2 or W as high impedance material and SiO2 as low impedance material.

Abstract: A droplet-ejecting head including a substrate including a pressure chamber communicating with a nozzle hole and also a piezoelectric element that includes a lower electrode, a piezoelectric layer which is formed above the lower electrode, and an upper electrode formed above the piezoelectric element and that causes a change in pressure in a liquid contained in the pressure chamber. The piezoelectric layer includes a first piezoelectric sub-layer located on the lower electrode and a second piezoelectric sub-layer located between the first piezoelectric sub-layer and the upper electrode. The first piezoelectric sub-layer has a polarization axis predominantly directed in an in-plane direction of the first piezoelectric sub-layer. The second piezoelectric sub-layer is predominantly (100)-oriented in the pseudocubic coordinate system.

Abstract: A droplet ejecting head including: a pressure chamber connected to a nozzle hole; and a piezoelectric device having ceramic member provided with an electrode. The ceramic member is made from a solid solution containing bismuth ferrate, bismuth potassium titanate, and bismuth manganate.

Abstract: A dual cantilever beam relaxor-based piezoelectric single crystal accelerometer is provided. A flexural sensing structure is provided that employs at least two piezoelectric cantilever beams having their longitudinal axes disposed in a substantially parallel arrangement with each beam containing at least one relaxor-based single crystal transduction element having its polarization axis substantially perpendicular to the longitudinal axis of the beam. One end is mounted to a rigid base and the other end can be mounted to a seismic proof-mass or can be free, wherein the base is subjected to dynamic excitation from either mechanical or acoustical origin. The flexible sensing structure can optionally be encapsulated in a viscoelastic material having a mechanical compliance and loss that is substantially greater than that of the flexible sensing structure.

Abstract: Disclosed is a piezoelectric body having both broad band property and improved piezoelectricity, which can be suitably used for a sensor, an actuator, an ultrasound transducer and the like. The piezoelectric body is featured in that (a) it comprises a laminate structure which is represented by the following general formula, General formula G2MX4 wherein G represents an organic onium, M represents an element of Group IV or a transition metal, and X represents Cl, Br or I, the organic onium G and an inorganic phase MX4 being alternately superposed on each other in the form of layers; or in that (b) it comprises a composite of a graphene structure and a perovskite structure, the graphene structure being composed of aggregate particles with an average particle size of not more than 200 nm.

Abstract: The invention relates to a ceramic material of the formula [(Bi0.5Na0.5TiO3)(1-y)(BaTiO3)y](1-x) (K0.5Na0.5NbO3)x, and also to a method for producing the same and to a component comprising said material.

Abstract: The invention relates to a ceramic binary material and to a method for the production thereof. The material has piezoelectric properties and has a composition of the formula (1?x)(Bi0.5Na0.5TiO3)×(K0.5Na0.5NbO3), where 0<x?0.15. Furthermore, the invention relates to a component comprising said material.

Abstract: In a method of manufacturing a piezoelectric device, among a +C plane on a +Z axis side of a piezoelectric thin film and a ?C plane on a ?Z axis side of the piezoelectric thin film, the ?C plane on the ?Z axis side of the piezoelectric thin film is etched. Thus, ?Z planes of the piezoelectric thin film on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the ?Z planes of the piezoelectric thin film in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film. Al is then epitaxially grown on the surface of the Ti electrode in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film.

Abstract: In the manufacture of a laminated piezoelectric/electrostrictive element by lamination of a piezoelectric/electrostrictive film and an electrode film containing either platinum or an alloy composed mainly of platinum and having a thickness of 2.0 ?m or less, both or either one of yttrium oxide (Y2O3) and cerium oxide (CeO2) is added to the electrode film or the piezoelectric/electrostrictive film, and the electrode film and the piezoelectric/electrostrictive film are fired simultaneously. This simultaneously achieves a reduced thickness and improved thermal resistance of the electrode film and a reduced change in piezoelectric/electrostrictive properties with time, thereby producing a piezoelectric/electrostrictive element with good initial piezoelectric/electrostrictive properties and with a small change in the piezoelectric/electrostrictive properties with time.

Abstract: Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material.

Abstract: Disclosed is an electromechanical transducer element that includes an electromechanical transducer film formed of a complex oxide (PZT) including lead (Pb), zirconium (Zr), and titanium (Ti). The electromechanical transducer film is formed by laminating plural PZT thin films until a thickness of the formed electromechanical transducer film becomes a predetermined thickness. When an atomic weight ratio (Pb/(Zr+Ti)) of average Pb included in the formed electromechanical transducer film is denoted by Pb(avg) and an atomic weight ratio (Pb/(Zr+Ti)) of Pb in any one of laminate interfaces of the plural PZT thin films is denoted by Pb(interface), the Pb(avg) is greater than or equal to 100 atomic percentage (at %) and less than or equal to 110 atomic percentage (at %), and a fluctuation ratio ?Pb=Pb(avg)?Pb(interface) of Pb in the laminate interface is less than or equal to 20 percent.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: Provided is a manufacturing method for preferentially-oriented oxide ceramics having a high degree of crystal orientation. The manufacturing method includes: obtaining slurry containing an oxide crystal B having magnetic anisotropy; applying a magnetic field to the oxide crystal B, and obtaining a compact of the oxide crystal B; and subjecting the compact to oxidation treatment to obtain preferentially-oriented oxide ceramics including a compact of an oxide crystal C having a crystal system that is different from a crystal system of one of a part and a whole of the oxide crystal B. By (1) reacting raw materials, (2) reducing the oxide crystal A, or (3) keeping the oxide crystal A at high temperature and quenching the oxide crystal A, the oxide crystal B is obtained to be used in the slurry.

Abstract: An electrical component comprises a lead-based perovskite crystal material layer between a lower electrode on the surface of a substrate and an upper electrode, characterized in that the lower electrode comprises a stabilizing first layer made of a first material and a seeding second layer made of a second material, the first and second materials having the same chemical composition but different structural parameters and/or densities. A process for fabricating a component is also provided, in which the material with a perovskite structure may be PZT with a (100) or (111) orientation.

Abstract: A piezoelectric ceramic comprising as a main component an alkali-containing niobate-based perovskite structure expressed by a compositional formula (LixNayK1-x-y)a(Nb1-zTaz)O3 (provided: 0.04<x?0.1, 0?y?1, 0?z?0.4, and 0.95?a?1.005); wherein a crystal phase or an amorphous phase containing Si and K is made present at a grain boundary or a grain boundary triple point of a plurality of crystal grains constituting the piezoelectric ceramic.

Abstract: A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTi1-c)1-dBd]Oe,??(P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a<1, a+b?1, and 0<d<b; and a value of e is within a range where the perovskite structure is obtained and e=3 is standard.

Abstract: A piezoelectric film is constituted of a perovskite oxide represented as: Pb1+?(ZrxTiy)1-a(MgbNb1-b)aOz, where ? and z are values within ranges where a perovskite structure is obtained and ?=0 and z=3 are standard, Pb is replaceable with another A site element in an amount of a range where the perovskite structure is obtained, b is a value in a range of 0.090?b?0.25, and a Nb ratio at a B site satisfies 0.13?a×(1?b).

Abstract: Provided is a piezoelectric generating element having an electrode on an outer surface of a piezoelectric ceramic body, wherein the piezoelectric ceramic body has a relative permittivity of 110 to 1700, an elastic compliance of 15 to 150 pm2/N, and a void ratio of 20 to 75%. Preferably, the void ratio is 50 to 75% in the piezoelectric generating element. A crystal particle is modeled as a cube with a length X on a side, a virtual void portion is provided in cube, a void ratio x is calculated based on a thickness t of a frame excluding void portion, a relative permittivity ?r and an elastic compliance s are calculated based on void ratio x, and a power generation amount P is estimated. Thereby, a piezoelectric generating element capable of significantly increasing a power generation amount more than before, and a method for estimating a power generation amount of the piezoelectric generating element can be obtained.