Abstract: To suppress discharge around an anode electrode. Provided is a light-emitting substrate, including a light-emitting member for emitting light by irradiation with an electron, a first electroconductive film stacked on the light-emitting member, a second electroconductive film which is distant from an outer periphery of the first electroconductive film and surrounds the outer periphery of the first electroconductive film, and a dielectric film for covering an end portion of the second electroconductive film which is opposed to the outer periphery of the first electroconductive film.

Abstract: A miss landing measure on a face plate of electrons emitted from electron-emitting devices by the warping of a rear plate and the face plate accompanying heat processes, such as seal bonding, is provided. Initial velocity vectors of electrons emitted from an electron-emitting area of an electron-emitting device formed on the rear plate has a distributed tendency according to an in-plane distribution of normal line directions of the rear plate so that the electrons emitted from each of the plurality of electron-emitting devices may irradiate each of the plurality of light emitting portions, corresponding to each of the electron-emitting devices, formed on the face plate.

Abstract: In accordance with the invention, there are nanoscale electron emitters, field emission light emitting devices, and methods of forming them. The nanoscale electron emitter can include a first electrode electrically connected to a first power supply and a second electrode electrically connected to a second power supply. The nanoscale electron emitter can also include a nanocylinder electron emitter array disposed over the second electrode, the nanocylinder electron emitter array having a plurality of nanocylinder electron emitters disposed in a dielectric matrix, wherein each of the plurality of nanocylinder electron emitters can include a first end connected to the second electrode and a second end positioned to emit electrons, the first end being opposite to the second end.

Abstract: An enhanced plane light source has a luminescent layer independently disposed in each recess formed on a light-transmittable substrate, so that field emission electrons directly impact the luminescent layer to produce light, which is not shielded by the cathode. The enhanced plane light source also includes a substrate forming a bottom structure thereof. The bottom substrate has a metal reflection surface to increase the reflectivity and upgrade light-emitting efficiency and luminous intensity. The recesses on the light-transmittable substrate have an approximate semi-circular or semi-parabolic cross section to increase the high field region at the cathode and the effective luminescent area at the anode, so that the luminous intensity and evenness are also largely increased.

Abstract: A method of manufacturing an electron emission device where the withstanding voltage characteristics are not deteriorated due to carbon remnants. With the method, cathode electrodes, a first insulating layer and gate electrodes are sequentially formed on a substrate. Openings are formed at the gate electrodes and the first insulating layer to partially expose the surface of the cathode electrodes. A conductive layer is formed on the entire surface of the structure of the substrate. Catalytic metal layers are formed on the conductive layer at the locations to be contain electron emission regions. Electron emission regions are formed on the catalytic metal layers by directly growing a carbonaceous material thereon. The conductive layer is patterned to remove the portions thereof overlaid with carbon remnants during the previous step except for the portion placed under the catalytic metal layer.

Abstract: An electron emission device includes: a substrate; first and second electrodes insulated from each other and having a predetermined shape on the substrate, at least one of the first and second electrodes being formed with a fine mesh pattern; and an electron emission region formed on the substrate and connected to one of the first and second electrodes. Furthermore, an electron emission display includes: first and second substrate arranged opposite to each other; first and second electrodes insulated from each other and having a predetermined shape on the first substrate, at least one of the first and second electrodes being formed with a fine mesh pattern; an electron emission region formed on the first substrate and connected to one of the first and second electrodes; and an image displaying portion including an anode electrode and a fluorescent layer arranged on the second substrate.

Abstract: The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

Abstract: An electron emission display includes a first substrate and a second substrate facing the first substrate. An electron emission unit is arranged on the first substrate. A light emission unit is arranged on the second substrate, the light emission unit having an anode electrode for accelerating an electron beam emitted from the electron emission unit. A sealing member is adapted to seal an exhaust hole of the first substrate. A voltage supply unit is adapted to apply an anode voltage to the anode electrode via the sealing member.

Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Abstract: An image display apparatus includes a rear plate having a plurality of electron-emitting devices, a face plate having a plurality of pixels, each pixel having one or more phosphors that emit fluorescence in response to electrons emitted from the electron-emitting devices, and a drive circuit for driving the electron-emitting devices. At least one of the phosphors is CaAlSiN3:Eu2+; and the electrons are supplied to the pixels for 2 ?s to 70 ?s from the electron-emitting devices on a scan basis, each of which devices supplies current to one or more of the phosphors.

Abstract: A field emission electron source (10) includes a conductive base (12), a carbon nanotube (14), and a modifying layer (16). The conductive base includes a top (122). One end (142) of the carbon nanotube is electrically connected with the top of the conductive base. The other end (144) of the carbon nanotube extends outwardly away from the top of the conductive base. The modifying layer (16) is uniformly distributed and coated onto at least the surface of the other end of the carbon nanotube. The work function of the modifying layer is lower than that of the carbon nanotube.

Abstract: An electron emission device includes a first substrate and a second substrate facing the first substrate. A first electrode and a second electrode are formed on the first substrate and insulated from each other. Electron emission regions are electrically connected to at least one of the first electrode or the second electrode. A phosphor layer is formed on the second substrate. An anode electrode is formed on a surface of the phosphor layer. An area of the electron emission regions is an emission area, and at least one of the first electrode or the second electrode includes a pair of line portions spaced apart from each other in parallel while interposing the emission area therebetween and a connector traversing the emission area to interconnect the pair of line portions.

Abstract: An electron emission device includes first and second substrates facing each other with a predetermined distance, cathode electrodes formed on the first substrate, electron emission regions formed on the cathode electrodes, and gate electrodes placed over the cathode electrodes while interposing an insulating layer. The gate electrodes have opening portions exposing the electron emission regions on the first substrate. The electron emission region has a height compensation portion formed on the cathode electrode such that the width of the height compensation portion is reduced in a direction toward the second substrate. An electron emission layer covers the surface of the height compensation portion and contacts the cathode electrode such that the electron emission layer is electrically connected to the cathode electrode.

Abstract: A plasma display panel is disclosed. The plasma display panel includes a front substrate including a first electrode and a second electrode, a rear substrate including a third electrode, and a barrier rib formed between the front and rear substrates. At least one of the first electrode or the second electrode is formed in the form of a single layer. At least one of the first electrode or the second electrode includes at least one line portion intersecting the third electrode, and a plurality of projecting portions projecting from at least one line portion. The shape of at least one of the plurality of projecting portions is different from the shape of the other projecting portions.

Abstract: An electron emission display includes first and second substrates that face each other, a plurality of electron emission elements that are arrayed on the first substrate, phosphor and black layers that are formed on a surface of the second substrate, and an anode electrode that is formed of metal and located on surfaces of the phosphor and black layers. The anode electrode is formed to satisfy the following condition: 0.3 ?m?A?3 ?m where, A indicates a distance between the anode electrode and the phosphor layer.

Abstract: An electron emission display includes first and second substrates facing each other to form a vacuum envelope, a plurality of driving electrodes formed on the first substrate, a plurality of electron emission regions controlled by the driving electrodes, a focusing electrode disposed on and insulated from the driving electrodes and provided with first openings through which electron beams pass, a plurality of phosphor layers formed on a surface of the second substrate, an anode electrode formed on surfaces of the phosphor layers, and a plurality of spacers for maintaining a gap between the first and second substrates. The focusing electrode includes second openings for forming a potential control unit for forming a potential well, the potential control unit being formed between the first openings to correspond to the spacers. The potential well attracts the electron beams, improving the directionality of the beams.

Abstract: A planar photoluminescent lamp. In one embodiment, the planar photoluminescent lamp includes a plurality of barrier walls defining a plurality of channels, wherein each channel is with an axis and formed with a resistive portion characterized by a width, Ar, and a first capacitive portion and a second capacitive portion both characterized by a width, Ac, such that Ac>Ar. The planar photoluminescent lamp also includes a first electrode and a second electrode. The first electrode and the second electrode are substantially perpendicular to the axis of a channel and extend over the first capacitive portions and the second capacitive portions of the plurality of channels, respectively.

Abstract: A thermal electron emission backlight unit includes: first and second substrates arranged parallel to each other; first and second anode electrodes respectively arranged on inner surfaces between the first and second substrates; wall frames adapted to seal an inner space between the first and second substrates; a movable spacer holder and a fixed spacer holder arranged inside the wall frames to face each other; a plurality of spacers arranged between the first and second substrates and adapted to maintain a gap therebetween, wherein ends of the spacers are coupled to the movable and fixed spacer holders; a plurality of cathode electrodes arranged across the spacers between the first and second substrates; and a phosphor layer arranged on the second anode electrode. The spacers include tension spacers adapted to provide tension between the movable and fixed spacer holders by pushing the movable spacer holder away from the fixed spacer holder. The first substrate is adapted to pass white light therethrough.

Abstract: A negative hole is formed by etching a dielectric layer that includes at least a lower dielectric sublayer and an upper dielectric sublayer. The lower dielectric sublayer and the upper dielectric sublayer have substantially the same permittivity, and the lower dielectric sublayer may have a higher etching rate lower than the upper dielectric sublayer. The negative hole formed in the upper and lower dielectric sublayers has an etched profile with a protruded portion protruding from at least the boundary between the lower dielectric sublayer and the upper dielectric sublayer. With various embodiments of the disclosed invention, resistance between the cathode and the gate may be secured to prevent arc generation and signal distortion.

Abstract: The method of making a vacuum tube collector or X-ray tube, which includes a matching glass-metal joint, includes providing a glass tube (1) made of a glass with a composition, in percent by weight on the basis of oxide content, consisting of B2O3, 8-11.5; Al2O3, 5-9; Na2O, 5-9; K2O, 0-5; CaO, 0.4-1.5; balance, SiO2; and bonding, preferably fusing or melting, an end portion of the glass tube (1) with a metal part (2) in order to bond or attach the glass tube to the metal part, thus forming a long-lasting glass-metal joint. The method of making the glass-metal joint is performed without using intermediary glass compositions of varying thermal conductivities. In the case of the vacuum tube collector the method can provide the basis for an automated manufacture of the vacuum tube collector.

Abstract: A method for forming high density emission elements for a field emission display and field emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes as practiced in the prior art. The emission elements formed according to the present invention provide a more uniform emission of electrons than the prior art techniques. Further, a display incorporating emission elements formed according to the present invention provides increased brightness.

Abstract: A flat panel display includes a substrate, a front glass, a cathode, a gate electrode, a plurality of front ribs, a phosphor film and a metal-backed film, and a gate rib. The front glass is arranged to oppose the substrate and forms a vacuum envelope together with the substrate. The front glass is transparent at least partially. The cathode is arranged on the substrate. The gate electrode is arranged between the substrate and front glass and includes an electron-passing hole through which an electron emitted from the cathode passes. The front ribs extend vertically at a predetermined interval from the front glass toward the gate electrode. The phosphor film and metal-backed film are stacked on a region of the front glass which is sandwiched by the front ribs. The gate rib extends vertically from the gate electrode toward the front glass and is in contact with the front ribs. A gate electrode structure and a gate electrode structure manufacturing method are also disclosed.

Abstract: A metal solder layer is formed on a sealing substrate through patterning. A pixel substrate is overlapped to the sealing substrate and the solder layer is irradiated with laser so that the sealing substrate and the pixel substrate are connected. Because the joining is achieved by the metal solder layer, intrusion of moisture into the inside space can be reduced. In addition, the solder layer can be very precisely formed through patterning.

Abstract: A light emission device for simplifying a structure of an electron emission unit and a manufacturing process thereof is provided. A display device using the light emission device as a light source is also provided. The light emission device includes a vacuum panel having a first substrate and a second substrate facing each other. A sealing member is between the first and second substrates. Recesss portions each have a depth into a side of the first substrate facing the second substrate. Cathode electrodes are in corresponding recesses. Electron emission regions are on corresponding cathode electrodes. A gate electrode is fixed at one side of the first substrate at a distance from the electron emission regions. A light emission unit is at one side of the second substrate. The gate electrode includes a mesh unit having openings for passing through an electron beam and a supporting member surrounding the mesh unit.

Abstract: A method is provided for preventing electron emission from a sidewall (34) of a gate electrode (20) and the edge (28) of the gate electrode stack of a field emission device (10), the gate electrode (20) having a surface (24) distally disposed from an anode (40) and a side (26) proximate to emission electrodes (38). The method comprises growing dielectric material (22) over the surface (24) and side (26) of the gate electrode (20), and performing an anisotropic etch (32) normal to the surface (24) to remove the dielectric material (22) from the surface (24) and leaving at least a portion of the dielectric material (22) on the side (26) of the gate electrode (20) and edge (28) of the gate electrode stack.

Abstract: A structure is formed by putting glass plates between a luminescence generating device and an electron emitting device so that a vacuum is formed in between. After in putting a high-voltage, an electron beam is emitted from the electron emitting device using low power. In the end, silicon quantum dots in the luminescence generating device are excited to generate a white light. The present invention has a good optoelectronic transformation efficiency.

Abstract: An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.

Abstract: To suppress discharge around an anode electrode. Provided is a light-emitting substrate, including a light-emitting member for emitting light by irradiation with an electron, a first electroconductive film stacked on the light-emitting member, a second electroconductive film which is distant from an outer periphery of the first electroconductive film and surrounds the outer periphery of the first electroconductive film, and a dielectric film for covering an end portion of the second electroconductive film which is opposed to the outer periphery of the first electroconductive film.

Abstract: A field emission device includes an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and an electron emitting unit. The first, second, third and fourth electrode down-leads are located on the periphery of the grid. The first and the second electrode down-leads are parallel to each other. The third and the fourth electrode down-leads are parallel to each other. The electron emitting unit includes a first electrode, a second electrode and at least one electron emitter. The first electrode is electrically connected to the first electrode down-lead, and the second electrode is electrically connected to the third electrode down-lead. One end of the electron emitter is connected to the second electrode and an opposite end of the electron emitter is spaced from the first electrode by a predetermined distance.

Abstract: A light-emitting substrate includes a substrate, a plurality of light-emitting members arranged on the substrate in a matrix pattern, a partition arranged between respective adjacent ones of the plurality of light-emitting members and projecting relative to a surface of the substrate to a position higher than the light-emitting members, a plurality of conductors each covering at least one of the light-emitting members and arranged in a matrix pattern in a mutually spaced relation, and a resistor electrically interconnecting the plurality of conductors. The resistor has a column stripe portion extending in a column direction, and the column stripe portion is positioned on the partition.

Abstract: A field emission device (100) generally includes a front substrate (101) and a rear substrate (111) opposite thereto. The front substrate is formed with an anode (102). The rear substrate is formed with cathodes (112) facing the anode. A plurality of insulating portions (121) are formed on the rear substrate, each of which is arranged between every two neighboring cathodes. A plurality of gate electrodes are formed on top surfaces of the insulating portions 121. Each of the gate electrodes has a getter layer (123) thereon.

Abstract: A field emission element (100) includes an elongated solid body (110), a carbon nanotube yarn (112) and an electrically conductive adhesive agent (114). The carbon nanotube yarn wraps round the elongated solid body. The electrically conductive adhesive agent is applied between the elongated solid body and the carbon nanotube yarn, and the electrically conductive adhesive agent is configured for fixing the carbon nanotube yarn to the elongated solid body. The substantially all of carbon nanotube yarn is entirely adhered on a peripheral surface of the elongated solid body.

Abstract: The time required for an interferometric modulator to switch from a state with a collapsed cavity to a state with an open cavity or vice versa, i.e., the switch time, is decreased by decreasing the viscosity of the gas filling the cavity. The viscosity is decreased by forming at least a partial vacuum in the cavity. The partial vacuum is formed, in turn, by forming a cavity in a housing holding the interferometric modulator. The vacuum can be generated by a vacuum pump. By decreasing the switch time, interferometric modulators in an array of interferometric modulators can be switched more quickly, thereby advantageously increasing the refresh rate for a display using the array.

Abstract: In the image display apparatus using the electron-emitting device, wiring metal is prevented from being diffused to a fine particle when a fine particle dispersed film is disposed on the wiring, and the image characteristic is prevented from being degraded because of the diffusion. A first wiring 4 and a second wiring 6 intersecting with the first wiring 4 through an insulating layer are formed on an insulation substrate 1, and after an electroconductive shielding layer 7 is formed on the second wiring 6, a anti static film made of a fine particle dispersed film is formed.

Abstract: An electron emission device includes first and second substrates facing each other while a vacuum space is interposed therebetween. An electron emission array is formed on the first substrate to emit electrons toward the second substrate, and phosphor layers are formed on the second substrate. An anode electrode is formed on a surface of the phosphor layers, and receives the voltage required for accelerating electron beams from the electron emission array. A grid electrode is disposed between the first and second substrates and is closer to the second substrate than to the first substrate. The grid electrode has electron beam passage holes, and receives a voltage lower than a location reference voltage.

Abstract: The invention provides an image forming apparatus in which orbit shift can be prevented to perform good image display in an electron beam emitted from the electron-emitting device adjacent to the spacer when an antistatic spacer coated with a high resistance film is used. A surface shape is controlled by forming a fine particle film on the surface of a row directional wiring 5 in which a spacer 3 is arranged, the electron emission is realized from electron-emitting areas 14a and 14b near contacting areas 15a and 15b in a non-contacting area 16 in which the spacer 3 is not in contact with the row directional wiring 5, and the non-contacting area 16 of the spacer 3 is irradiated with the electron to decrease a potential, which allows a good equipotential line 17 to be formed.

Abstract: A novel field emission display (FED) and a novel method for making the same. The FED includes a substrate, a cathode electrode and a focus electrode formed on the same level with each other on the substrate, an insulation layer formed on the cathode electrode and the focus electrode such that the cathode electrode and the focus electrode are partially exposed through the insulation layer, a field emitter formed at the cathode electrode exposed by the insulation layer, and a gate electrode formed on the insulation layer. The field emitter being formed on the same layer and of the same material and at the same time as the cathode electrode.

Abstract: An electron emission device includes first electrodes arranged on a substrate in a direction of the substrate, and an insulating layer arranged on an entire surface of the substrate and covering the first electrodes. Second electrodes are arranged on the insulating layer and are perpendicular to the first electrodes. Electron emission regions are connected to one of the first and the second electrodes. The lateral edges of the first electrodes and the lateral edges of the second electrodes respectively cross each other.

Abstract: A substrate 200 is provided with conductive cathode tracks and a field electron emission material on the tracks. Septa 201 and pillars 202 are provided as raised elements over the emission material. An electrically insulating layer is formed over the emission material and raised elements 201, 202, such that boundary walls are formed in the insulating layer where it contacts the raised elements. The raised elements 201, 202 are then removed, to leave emitter cells and voids for other components, defined by the boundary walls with the insulating layer. A gate electrode is provided over the insulating layer.

Abstract: An electron emission device includes a substrate, cathode and gate electrodes placed on the substrate in an insulated manner, and electron emission regions electrically connected to the cathode electrodes. Each of the cathode electrodes includes a line electrode having a groove at one lateral side surface thereof, and isolation electrodes formed on the substrate exposed through the groove such that the isolation electrodes are isolated from the line electrode. The electron emission regions are placed on the isolation electrodes and a resistance layer electrically connects the isolation electrodes to the line electrode.

Abstract: A flat-panel display includes a cathode panel including a plurality of electron emission regions, and an anode panel including a fluorescent layer and an anode electrode, both panels being bonded together in a peripheral region and holding a vacuum space therebetween; a plurality of spacers disposed between the cathode panel and the anode panel; a high-resistance layer provided between the anode panel and each of the spacers; and a conductor layer provided on a portion of each of the spacers which contacts the cathode panel.

Abstract: A sealing structure for a field emission display (FED) device and a method of manufacturing the same is provided. The sealing structure includes an upper substrate, a lower substrate, spacers, and a frit, wherein at least one exhaust outlet is formed in the frit. The method of manufacturing the sealing structure of the FED device prepares a lower substrate and an upper substrate, installs a frit having at least one exhaust outlet between the lower substrate and the upper substrate, and heats the lower substrate and the upper substrate while arranging the upper substrate on the lower substrate at a predetermined temperature to melt the frit in order to seal the space between the lower substrate and the upper substrate. Inner gas can be easily exhausted and the inside of the FED is reliably sealed while preventing damages of the spacers.

Abstract: A color field emission display includes a sealed container having a light permeable portion and at least one color element enclosed in the sealed container. The color element includes a cathode, at least two anodes, at least two phosphor layers and at least two CNT strings. The phosphor layers are formed on the end surfaces of the anode. The CNT strings are electrically connected to and in contact with the cathode with the emission portion thereof suspending. The phosphor layers are opposite to the light permeable portion, and one emission portion is corresponding to one phosphor layer. The luminance of the color FED is enhanced at a relatively low voltage.

Abstract: A color pixel element for field emission display includes a sealed container having a light permeable portion, at least two anodes, a cathode, at least two phosphor layers formed on the end surfaces of the anodes, and at least two CNT strings electrically connected to and in contact with the cathode with the emission portions of the CNT strings suspending. The phosphor layers are opposite to the light permeable portion, and one emission portion is corresponding to one phosphor layer. In each CNT string, some of CNT bundles are taller than and project over the adjacent CNT bundles, and each of projecting CNT bundles functions as an electron emitter. The anodes, the cathode, the phosphor layers and the CNT strings are enclosed in the sealed container. The luminance of the color pixel element is enhanced at a relatively low voltage.

Abstract: A high-performance miniature RF sensor that maintains gain, directivity, and isolation in a miniature package. The miniature RF sensor includes stacked current and voltage pickups disposed in a PCB construction, the sensor further including quarter wave transforming filter, triaxial shielding, and skin-effect filtering.

Abstract: An electron beam apparatus in which a spacer having a high-resistance film coating a surface of a base material is inserted between a rear plate having electron emitting elements and row-direction wires, and a faceplate having a metal back. The row-direction wires and the metal back are electrically connected via the high-resistance film. An electric field near an electron emitting element near the spacer is maintained to substantially constant irrespective of the positional relationship between the spacer and the electron emitting element near the spacer. When a sheet resistance value of the high-resistance film on a first facing surface of the spacer that faces a row-direction wire is represented by R1, and a sheet resistance value of the high-resistance film on a side surface adjacent to the electron emitting element is represented by R2, R2/R1 is 10 to 200.

Abstract: To provide a method of manufacturing a field emission display having an improved electron emission effect by means of laser irradiation and accordingly mitigating a luminance fluctuation among pixels, and other such techniques. Provided is a method of manufacturing a field emission display which includes a cathode substrate and a fluorescent screen glass opposed to the cathode substrate and emits light when an electron emitted from a carbon nanotube printed layer (7) containing a carbon nanotube of the cathode electrode enters a fluorescent material of the fluorescent screen glass, the method including a laser beam irradiation step of irradiating a surface of the carbon nanotube printed layer (7) with a laser beam having its energy density to be spatially modulated to expose and raise the carbon nanotube of the carbon nanotube printed layer so as to form a laser irradiation part (B) and a non-laser irradiation part (C).

Abstract: A luminescent display has a plurality of individual discreet phosphor elements (33) on a glass plate separated from one another, filler material (45) between the phosphor elements and reflective film over the individual phosphor elements (33). The filler material (45) can be white and contact the sides of the phosphor elements (33). The filler material (45) can have a peak height that is at least half of the height of the individual phosphor elements (33) between which the filler material (45) lies.

Abstract: A self-emission panel and a method of manufacturing a self-emission panel which can prevent emission failures from occurring due to various factors, thereby achieving a self-emission panel that is free from emission failures. The self-emission panel is manufactured by forming a first conductive layer on a substrate directly or via other layers, forming a deposition layer including a luminescent layer on the first conductive layer, and forming a second conductive layer on the deposition layer. This manufacturing method includes: a first step of forming a sectioning layer for sectioning an opening for making a emission area on the first conductive layer after the formation of the first conductive layer; a second step of applying surface treatment to at least the surface of the first conductive layer inside the opening; and a third step of depositing a deposition layer on the first conductive layer given surface treatment in the second step.

Abstract: An electron emission device that includes a substrate, at least one electron emission region, and at least one cathode electrode disposed on the substrate and electrically connected to the electron emission region, wherein the cathode electrode has a first electrode, a plurality of second electrodes on the first electrode, a sub-insulation layer between the first and second electrodes, and a resistive layer electrically connected to the first and second electrodes.