Abstract: Provided herein are circuits and methods to generate a voltage proportional to absolute temperature (VPTAT) and/or a bandgap voltage output (VGO) with low 1/f noise. A first base-emitter voltage branch is used to produce a first base-emitter voltage (VBE1). A second base-emitter voltage branch is used to produce a second base-emitter voltage (VBE2). The circuit also includes a first current preconditioning branch and/or a second current preconditioning branch. The VPTAT is produced based on VBE1 and VBE2. A CTAT branch can be used to generate a voltage complimentary to absolute temperature (VCTAT), which can be added to VPTAT to produce VGO. Which transistors are in the first base-emitter voltage branch, the second base-emitter voltage branch, the first current preconditioning branch, the second current pre-conditioning branch, and the CTAT branch changes over time.

Abstract: A circuit for generating a temperature-stable reference voltage, including, between two terminals of application of a D.C. voltage: a current source and at least two parallel branches, each comprising a resistive element and one or several transistors, the transistors being different form one another and the reference voltage being sampled between the terminals of said branches.

Abstract: The present invention provides a reference power supply circuit which does not require trimming and prevents occurrence of deadlock of a band gap reference circuit. An RFID tag chip related to the present invention has a reference power supply including a switch for switching between a band gap reference circuit and a Vth difference reference circuit. A reference potential in band gap reference of the band gap reference circuit and an output of the Vth difference reference circuit are compared by a comparator, and a transistor operating as a switch is controlled, thereby making the reference potential in band gap reference rise, hastening startup of the band gap reference circuit, and preventing occurrence of deadlock in the band gap reference circuit.

Abstract: The present abstract discloses a CMOS bandgap reference source circuit, comprising a startup circuit, a power-off control circuit, a reference voltage generating circuit and an operational amplifier. The positive and a negative input terminal of the operational amplifier both consist of two same field effect transistors and both are provided with an input controlled switch; by doing so, two field effect transistors in the positive terminal and two field effect transistors in the negative terminal work alternately between their strong inversion and cut-off region so as to drastically reduce the noises of the reference circuit, which results originally from the flicker noises of two input transistors of the operational amplifier.

Abstract: A regulator circuit is provided having multiple regulated output voltages. In accordance with various example embodiments, a regulator includes first and second pass transistors driven by a reference voltage generator circuit. The first pass transistor has a gate coupled to an output of the reference voltage generator circuit. A switching circuit is configured to couple the output of the reference voltage generator circuit to the gate of the second pass transistor in response to the enable signal being in a first state. The regulator includes a pre-charge circuit configured to charge the gate of the second pass transistor in response to an enable signal being in the first state.

Abstract: Bandgap reference circuit, comprising a voltage generator (VG) designed to produce a voltage or a current proportional to absolute temperature, a supply circuit (SC), designed to produce a supply for operating the voltage generator (VG), comprising a bias element (BS) and a control element (CS), and a bias circuit (BC), designed to produce a bias for operating the voltage generator (VG), comprising a bias element (BB) and a control element (CB). At least one of the control element (CS) of the supply circuit (SC) and the control element (CB) of the bias circuit (BC) comprises a pseudomorphic high-electron-mobility transistor or a hetero-junction bipolar transistor and/or at least one of the bias element (BS) of the supply circuit (SC) and the bias element (BB) of the bias circuit (BC) comprises a long-gate pseudomorphic high-electron-mobility transistor or a resistor.

Abstract: A bandgap voltage reference unit on an integrated circuit (101) includes a proportional-to-absolute-temperature (PTAT) current source (100) coupled to a bandgap voltage reference circuit (200) that includes a plurality of self-cascode MOSFET structures (201-204) that are cascaded together to form a PTAT voltage generator (205). The bandgap voltage reference circuit also includes a complementary-to-absolute-temperature (CTAT) device (260). A PTAT voltage from the PTAT voltage generator is added to a CTAT voltage from the CTAT device to produce an output voltage of the bandgap voltage reference unit, such that the output voltage is the bandgap voltage of the integrated circuit and such that the output voltage does not change with temperature.

Abstract: A system and method are provided for a PTAT cell with no resistors which can operate at low power, has less sensitivity to process variation, occupies less silicon area, and has low noise. Further, a system and method are provided to scale up the reference voltage and current through a cascade of unit cells. Still further, a system and method are provided for PTAT component to be fine-tuned, advantageously providing less process variability and less temperature sensitivity.

Abstract: In a reference-voltage generation circuit using a diode, its temperature characteristics can be freely controlled. A regulating current supply section supplies a regulating current for regulating a diode current to an anode of one of a first or second diode. The regulating current supply section can change a magnitude of the regulating current, and can generate a current proportionate to a diode current of the other diode as the regulating current.

Abstract: The disclosure is related to a method for transforming voltage identification codes of a microprocessor. The method comprises the steps of: receiving a first voltage identification code of a first voltage regulation standard, wherein the first voltage identification code is in correspondence with a first voltage; and transforming the first voltage identification code into a second voltage identification code of a second voltage regulation standard, wherein the second voltage identification code is in correspondence with a second voltage, and the second voltage is the same as the first voltage.

Abstract: A voltage regulator is capable of continuously and smoothly preventing an inrush current independently of a startup characteristic of a reference voltage circuit. The voltage regulator is provided with an inrush current protection circuit composed of a constant-current circuit, a first transistor having the source thereof connected to the constant-current circuit and the gate thereof controlled by an output voltage detection circuit, a capacitor connected between the first transistor and the gate of an output transistor, a second transistor having the gate thereof connected to the drain of the first transistor and the source thereof connected to a power supply terminal, and a third transistor, which is connected between the second transistor and the output transistor and the gate of which is controlled by the output voltage detection circuit.

Abstract: A power supply system is provided that provides voltage clamping capabilities to provide over voltage protection to circuit elements and circuit systems. The power supply includes isolation mechanisms that generate a regulated power supply that is independent of an input power source. Voltage addition/multiplication techniques may be utilized to generate a reference voltage, from the regulated power supply, that is capable of setting a maximum voltage on a clamped power supply. The power supply system may operate without input from other circuits/systems associated with an integrated circuit.

Abstract: A bandgap reference circuit includes a modulator, an amplifier, a demodulator, a closed feedback loop and an output circuit. The modulator is utilized for modulating an input signal to generate a modulated input signal. The amplifier is utilized for amplifying the modulated input signal to generate an amplified modulated input signal. The demodulator is utilized for demodulating the amplified modulated input signal to generate a demodulated signal. The closed feedback loop is coupled between an output terminal of the demodulator and an input terminal of the modulator. The output circuit is utilized for generating an output current according to the demodulated signal, where the output current is a constant current insensitive to fluctuations in temperature.

Abstract: In accordance with an embodiment of the present invention, a bandgap voltage reference circuit includes a plurality of circuit branches, a plurality of resistors and a plurality of switches. The plurality of switches are used to selectively change over time which of the resistors are connected to be within a first one of the circuit branches and which of the resistors are connected to be within a second one of the circuit branches, to thereby reduce the effects that long term drift of the resistors have on a bandgap voltage output (VGO) of the bandgap voltage reference circuit.

Abstract: Provided is a reference voltage circuit with improved temperature characteristics. A current based on a current flowing through a first depletion transistor whose gate and source are connected to each other is caused to flow through a third depletion transistor having the same threshold, to thereby generate a voltage between a gate and a source of the third depletion transistor. A current based on a current flowing through a second depletion transistor whose gate and source are connected to each other is caused to flow through a fourth depletion transistor having the same threshold, to thereby generate a voltage between a gate and a source of the fourth depletion transistor. A reference voltage is generated based on a difference voltage of the two voltages, to thereby obtain a reference voltage having less voltage fluctuations with respect to a temperature change.

Abstract: A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage.

Abstract: A voltage regulator comprises first and second bipolar transistors operating at different current densities; a resistor is connected between their bases across which ?VBE appears. A third bipolar transistor is connected such that the voltages at the bases of the first and third transistors are equal or differ by a PTAT amount. A current mirror is arranged to balance the collector current of one of the second and third transistors with an image of the collector current of the first transistor when the output node is at a unique operating point. The operating point includes both PTAT and CTAT components, the ratio of which can be established such that the operating point has a desired temperature characteristic. A transistor connected to the output node and driven by the output of the current mirror regulates the output voltage by negative feedback.

Abstract: A reference voltage generation circuit is disclosed. The reference voltage generation circuit includes an operational amplifier configured to output a constant voltage in accordance with reference voltages input to first and second terminals of the operational amplifier, and a start-up circuit configured to initiate operation of the operational amplifier when the start-up circuit switches from an idle mode to an active mode, including a first transistor having a gate connected to an output of the operational amplifier, a source connected to a supply voltage, and a drain connected to a resistor, configured to supply a reference current to the resistor in accordance with the operational amplifier output, thereby generating the reference voltage.

Abstract: A self-biased reference circuit device (100) includes a first cascode current mirror (116), a second cascode current mirror (118), and a startup circuit (108). The first cascode current mirror (116) is capable to generate a first bias voltage (136) and a second bias voltage (140) in response to a first current and to generate a second current in response to the first and second bias voltages. The second cascode current mirror (118) is capable to generate a third bias voltage (164) in response to the second current, to generate a fourth bias voltage (168) in response to a third current, and to generate the first current in response to the third and fourth bias voltages. The startup circuit includes a first switch (188) and a second switch (196). The first switch (188) is capable to connect the first bias voltage (136) and fourth bias voltage (168) during startup.

Abstract: A bandgap circuit includes a bias current generating circuit and a complementary start-up circuit. The bias current generating circuit includes a first node and a second node and is arranged to generate a bias current in response to a voltage provided at the first node or a voltage provided at the second node. The complementary start-up circuit is arranged to start-up the bias current generating circuit and includes a first start-up circuit coupled to the first node and a second start-up circuit coupled to the second node. The first and second start-up circuits operate complementarily, so that the second start-up circuit provides the voltage to the second node when the first start-up circuit is unable to provide the voltage to the first node, and the first start-up circuit provides the voltage to the first node when the second start-up circuit is unable to provide the voltage to the second node.

Abstract: A method includes generating a first current, wherein the first current flows through a first resistor and a first bipolar transistor. A first end of the first resistor is serially connected to an emitter-collector path of the first bipolar transistor, and a second end of the resistor is connected to an input of an operational amplifier. A second current is generated to flow through a second resistor that is connected to the input of the operational amplifier. An emitter of a second bipolar transistor is connected to a base of the first bipolar transistor, wherein a base and a collector of the second bipolar transistor are connected to VSS. The first and the second currents are added to generate a third current, which is mirrored to generate a fourth current proportional to the third current. The fourth current is conducted through a third resistor to generate an output reference voltage.

Abstract: A voltage reference containing a programmable resistance portion at an output node at which an output reference voltage is provided. The desired magnitude of the programmable portion which provides optimum matching of an output resistance of the voltage reference and a series resistance of an output capacitor of the voltage reference is determined and hard-programmed. As a result, the output voltage of the voltage reference is provided with improved linearity. In an embodiment, the determination of the magnitude of the programmable portion is performed by providing an input to an analog to digital converter (ADC) with the voltage reference driving the ADC. The resistance setting corresponding to the third harmonic being less than a desired threshold is then hard-programmed. In an alternative embodiment, the programmable portion is set to specific resistance dynamically during operation.

Abstract: This document discusses, among other things, apparatus and methods for an edge rate driver for a power converter switch. In an example, the driver can include an input node configured to receive a pulse width modulated signal, a first switch configured to couple a control node of the power converter switch to a supply voltage during a first state, a second switch configured to couple the control node of the power converter switch to a reference voltage during a second state, and a first current source configured to supply charge current to the first switch when the power converter switch transitions from the second state to the first state, the charge current configured to charge a parasitic capacitance of the power converter switch.

Abstract: A regulator circuit is provided having multiple regulated output voltages. In accordance with various example embodiments, a regulator includes first and second pass transistors driven by a reference voltage generator circuit. The first pass transistor has a gate coupled to an output of the reference voltage generator circuit. A switching circuit is configured to couple the output of the reference voltage generator circuit to the gate of the second pass transistor in response to the enable signal being in a first state. The regulator includes a pre-charge circuit configured to charge the gate of the second pass transistor in response to an enable signal being in the first state.

Abstract: Systems and methods to achieve a startup circuit of bandgap voltage reference generator circuits monitoring a current flow in the bandgap voltage reference generator circuit have been achieved. The startup circuit can operate at supply voltages of about one threshold voltage and is therefore appropriate for low voltage applications. The monitoring of a current through an electrical component inside the bandgap voltage reference generator circuit by replication the component branch in a scaled version saves power and does not disturb the normal operation of the current-mode bandgap voltage reference generator. The startup circuit invented can be applied for current-mode bandgap voltage reference generator circuits as well as for voltage-mode bandgap voltage reference generator circuits.

Abstract: A system and method are provided for a PTAT cell with no resistors which can operate at low power, has less sensitivity to process variation, occupies less silicon area, and has low noise. Further, a system and method are provided to scale up the reference voltage and current through a cascade of unit cells. Still further, a system and method are provided for PTAT component to be fine-tuned, advantageously providing less process variability and less temperature sensitivity.

Abstract: A voltage down converter (VDC) applicable to high-speed memory devices. The VDC includes a steady driver and active driver along with at least one additional transistor. The steady driver and active driver are coupled by a transistor switch during device start-up to provide fast ramp-up to operating voltage and current. After start-up, the steady driver and active drive function to maintain a steady operating voltage and current. An additional transistor is digitally controlled to drive up operating voltage and current upon issuance of an active command representing read, write, and/or refresh of memory. In this manner, the additional transistor provides fast compensation for fluctuations in operating voltage and current brought on by activity in the memory array.

Abstract: Systems and methods for realizing current drivers without current or voltage feedback for devices that require accurate current drive with zero standby current has been disclosed. In a preferred embodiment of the invention this current driver is applied for write circuits for MRAMs. A fast and accurate reference current is generated by diode voltage divided by resistor without any feedback. The diode current is not fed back from the reference current. The diode current is generated from a regulated voltage. Temperature compensation of the write current is inherently built in the diode current reference. Fine-tuning of the temperature coefficient is achieved by mixing poly and diffusion resistors. A switch inserted in the current driver can turn on the driver fast and without a need for standby current. Leading boost in the current driver can fast charge the large coupling capacitance of word and bit lines and speed up write timing.

Abstract: A reference signal generator circuit for an analog-to-digital converter, the circuit having a signal-generation stage to generate a first reference signal on a first reference terminal, and a filtering circuit arranged between the generator stage and the analog-to-digital converter to determine a filtering of disturbance present on the first reference signal and supply at output on a second reference terminal a second filtered reference signal, the filtering circuit having a switching circuit to connect the first reference terminal to the second reference terminal directly during startup of the reference signal generator circuit and then through the filtering circuit once the startup step is terminated.

Abstract: A device for providing a high precision current reference comprising a PTAT generator circuit for supplying a voltage, a high precision current reference offset generator circuit for generating a high precision current offset to compensate for variation in a resistance component due to variation in temperature, and a current adding circuit for aggregating the current from the PTAT generator circuit and the current from the high precision current reference offset generator circuit. In one embodiment, a high precision current reference generated is substantially independent of temperature. On-chip resistors may be used to design a high precision current reference. Accordingly, high precision current reference generated maintains high precision with zero temperature co-efficient using on-chip resistors that are substantially cheaper than off-chip resistors.

Abstract: In order to realize a reference voltage circuit that operates with lower current consumption while maintaining an operation at lower voltage without causing deterioration of a power supply rejection ratio, provided is a reference voltage circuit in which a depletion transistor of an ED type reference voltage circuit is constituted of a plurality of depletion transistors connected in series, and in which a gate terminal of a cascode depletion transistor is connected to a connection point between the depletion transistors of the ED type reference voltage circuit.

Abstract: A semiconductor integrated circuit can include a reference voltage pad that can be configured to receive an external reference voltage and supply the external reference voltage to the inside of the semiconductor integrated circuit, an internal reference voltage generator that can be configured to generate an internal reference voltage by voltage dividing, a selector that can be configured to select and output one of the external reference voltage and the internal reference voltage in response to a selection signal, and a voltage trimming block that can be configured to regulate the level of the output voltage from the selector in response to trimming signals and outputs the level-regulated voltage as a reference voltage.

Abstract: A method and apparatus for generating a low reference voltage having low power consumption characteristics is provided. A reference voltage generating apparatus includes a constant current source circuit which generates a reference current. A load circuit is connected to the constant current source circuit and generates a voltage which is proportional to the reference current. A current branch circuit removes a portion of temperature-invariant current components included in the reference current from a connection terminal of the constant current source circuit and the load circuit to a ground terminal through a current branch which is different from a current branch of the load circuit.

Abstract: A power adapter includes a regulation device, which includes a division circuit, a reference circuit, and an impedance regulation circuit. The division circuit includes a first reference terminal and a second reference terminal. The second reference terminal is connected to an output terminal of the regulation device. The reference circuit includes a third reference terminal connected to the first reference terminal, and the reference circuit outputs a stable reference voltage via the third reference terminal, to provide the stable reference voltage for the first reference terminal. The impedance regulation circuit is connected to the first reference terminal, to provide equivalent impedance for the first reference terminal. The impedance of the equivalent impedance changes in a way corresponding to changes in the current flowing through the output terminal.

Abstract: A voltage reference source is provided that includes a Brokaw bandgap core comprising a first set of transistors, a second set of transistors coupled to the first set of transistors and serving as load devices to the first set of transistors, and a dynamic element matching circuit coupled to the first and second sets of transistors so as to cancel the offset and noise produced by a selective number of the second set of transistors.

Abstract: A temperature compensated low voltage reference circuit can be realized with a reduced operating voltage overhead and reduced spatial requirements This is accomplished in several ways including integrating one or more bipolar junction transistors into a current differencing amplifier and reducing the number of components required to implement various voltage reference circuits. All of the reference circuits may be constructed with various types of transistors including DTMOS transistors.

Abstract: A reference current output device and reference current output method that may adjust a reference current while maintaining a temperature gradient. In the reference current output device and reference current output method of the present invention, a reference current is outputted by a reference voltage and current output circuit, a reference voltage outputted from the reference voltage and current output circuit is converted to an adjustment current and outputted by a conversion and output circuit, the adjustment current is superimposed with the reference current and a superimposed current is outputted by a superimposition and output section.

Abstract: A reference voltage generation circuit includes: a bandgap reference circuit, generating a plurality of initial currents with different temperature coefficients; a base voltage generation circuit, combining the initial current into a combined current, and converting the combined current into one or more base voltages; a bias current source circuit, generating one or more bias currents based on at least one of the initial currents; and one or more regulating output circuit, each converting a respective one of the one or more bias currents into an increment voltage and adding the increment voltage to the base voltage to generate a respective output voltage. Each output voltage may have its respective temperature coefficient.

Abstract: A first current source generates a first current having positive temperature characteristics. A second current source generates a second current. A first current mirror circuit generates a third current by multiplying, by a first coefficient, the base current of a compensation transistor configured as an NPN bipolar transistor arranged on a path of the second current. A second current mirror circuit generates a fourth current that is proportional to the difference between the first current and the third current. A current generating circuit outputs the sum total of the fourth current and a fifth current that is proportional to the base current.

Abstract: A bandgap circuit is provided, which includes a current source, a voltage boost circuit, a voltage input circuit, a voltage equalizer circuit, and a voltage output circuit. The current source provides a first current, a second current, and a third current, which are equal to one another. The voltage boost circuit provides a boost voltage by a single current path. The voltage input circuit receives the first and the second currents, and provides a first input voltage and a second input voltage based on the boost voltage. The voltage equalizer circuit receives the first and the second input voltages and equalize the two input voltages. The voltage output circuit provides a bandgap reference voltage according to the third current.

Abstract: A system for generating a tunable DC slope includes: a first stage, supplied with an external voltage, for receiving a process, voltage and temperature (PVT) insensitive reference voltage and generating a voltage independent current; a second stage, coupled to the first stage and supplied with the external voltage, for generating a voltage dependent current and summing the voltage dependent current and the voltage independent current to generate a sloped voltage; and a third stage, coupled to the second stage and supplied with the external voltage, for amplifying the sloped voltage, and tapping the resultant sloped voltage at a desired point for generating the output DC slope.

Abstract: A circuit includes an operational amplifier including a first input and a second input. A first resistor has a first end coupled to the first input. A first bipolar transistor includes a first emitter coupled to a second end of the first resistor, and a first base. A second bipolar transistor includes a second emitter coupled to the second input, and a second base. A third bipolar transistor includes a third emitter coupled to the first base, a first collector, and a third base connected to the first collector. A fourth bipolar transistor includes a fourth emitter coupled to the second base, a second collector, and a fourth base connected to the second collector. A second resistor is coupled to the first input, wherein the second resistor is parallel to the first resistor and the first bipolar transistor.

Abstract: A voltage regulator comprises first and second bipolar transistors operating at different current densities; a resistance is connected between their bases across which ?VBE appears. A third bipolar transistor is connected such that its base voltage is equal to that of the first transistor or differs by a PTAT amount. A current mirror balances the collector current of one of the second and third transistors with an image of the collector current of the first transistor when an output node is at a unique operating point. The operating point includes both PTAT and CTAT components, the ratio of which can be established to provide a desired temperature characteristic. A feedback transistor provides current to the bases of the bipolar transistors and to the output node and is driven by the current mirror output to regulate the voltage at the output node by negative feedback.

Abstract: The semiconductor integrated circuit device includes load circuits and internal voltage generators for generating internal source voltages for driving the load circuits. Each of the internal voltage generators includes a reference voltage generating circuit for generating reference voltages, and regulator circuits for generating the internal source voltages with reference to the reference voltages. The regulator circuit is formed over an SOI substrate and includes a preamplifier circuit for detecting and amplifying a difference between each of the internal source voltages and each of the reference voltages, a main amplifier circuit for amplifying the output of the preamplifier circuit and generating a control signal, and a driver circuit for generating the internal source voltage in response to the control signal. An input stage of the main amplifier circuit is configured by MOS transistors coupling the gates and bodies of the MOS transistors.

Abstract: Disclosed is a current and voltage detection circuit comprising: a voltage input terminal to which a direct current voltage is applied; a voltage comparison circuit that determines which of the applied voltage and a predetermined voltage is larger; a switching element connected in series to a current-voltage conversion unit, between a positive electrode terminal of the power supply and a reference potential point of the circuit; and a control circuit that generates a control signal of the switching element in response to output of the voltage comparison circuit, wherein the circuit turns ON the switching element and determines the voltage, by the voltage comparison circuit, when a voltage supply capability or current supply capability is low; and turns OFF the switching element by the control signal and determines the voltage, when the voltage comparison circuit determines that the voltage is higher than the predetermined voltage.

Abstract: An electronic reference-signal generation system includes a supply invariant bandgap reference system that generates one or more bandgap reference signals that are substantially unaffected by bulk error currents. In at least one embodiment, the bandgap reference generates a substantially invariant bandgap reference signals for a range of direct current (DC) supply voltages. Additionally, in at least one embodiment, the bandgap reference system provides substantially invariant bandgap reference signals when the supply voltage varies due to alternating current (AC) voltages. In at least one embodiment, the bandgap reference system generates a bandgap reference voltage VBG, a “proportional to absolute temperature” (PTAT) current (“iPTAT”) and a “zero dependency on absolute temperature” (ZTAT) current (“iZTAT”) that are substantially unaffected by variations in the supply voltage and unaffected by a bulk error current.

Abstract: A layout of a voltage/current reference system is disclosed. A first voltage/current reference circuit (for example, a bandgap reference circuit) and a second voltage/current reference circuit are respectively laid out on either side of a substrate, such as edges or perimeter sides of the substrate. A reference voltage/current is derived by averaging respective output reference voltage/current values of the first and the second voltage/current reference circuits. Accordingly, the noise influence on the voltage/current reference system is minimized.

Abstract: A reference current generating circuit includes first and second standard current generating circuits to generate first and second standard currents, respectively and first and second trimming circuits to generate first and second reference circuits by trimming the standard current values outputted from the standard current generating circuits. The second standard current generating circuit operates for a part of an operation period of the first standard current generating circuit. The value of the first reference current is compared with a value of the second reference current, and controlled so as to approach the value of the second reference current by a trimming controller.

Abstract: An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator; and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.

Abstract: Semiconductor circuit capable of mitigating unwanted effects caused by variations in a received input signal are provided, in which a main circuit receives an input signal and comprises a first current source coupled between a first node and a first power voltage to generate a first current according to a first bias voltage. A replica circuit is coupled to the main circuit to duplicate a variation in a voltage at the first node caused by a variation in the input signal and dynamically adjusts the first bias voltage according to the duplicated variation such that the first current is maintained at a constant.