Abstract: A deterioration detection device includes a storage including a first current path and a second current path and configured such that a current is applied to the first current path and the second current path, a storage input control unit configured to compare an internal operating condition of a memory device with a target condition in a first operating mode and to select one of the first current path and the second current path of the storage based on a result of the comparison, and an output unit configured to output an output signal indicated deterioration, accumulated in one of the first current path and the second current path, in a second operating mode.

Abstract: One example discloses a power management circuit, including: a voltage reference circuit including a bandgap circuit coupled to and configured by a first trimming circuit; an undervoltage lockout (UVLO) circuit coupled to and configured by a second trimming circuit; wherein the first trimming circuit and the second trimming circuit are configured to receive a single trim control setting.

Abstract: A reference signal generator having high order temperature compensation includes: first and second transistors generating a proportional to absolute temperature (PTAT) signal and at least one complementary to absolute temperature (CTAT) signal according to at least one bandgap related to the first and second transistors; a feedback network coupled to the first and second transistors; an amplifier circuit configured to linearly superimpose the PTAT signal and the CTAT signals via the feedback network, to generate a reference signal; a second order adjustment circuit including a third transistor controlled by a bias voltage, to generate an adjustment current for adjusting the reference signal; and a third order adjustment circuit configured to adjust the bias voltage according to a temperature under test, for adjusting the adjustment current, to adjust the reference signal, such that a variation of the reference signal is smaller than a predetermined variation range within a temperature range.

Abstract: A digitally controlled oscillator (DCO) includes; a current mirror configured to generate a supply current in response to a bias voltage matching a reference current, a variable resistor connected to the current mirror through a first node outputting the reference current and configured to provide a variable resistance in response to a first control signal, an oscillation circuit connected to the current mirror through a second node outputting the supply current and configured to generate an oscillation signal in response to the supply current, and a feedback circuit configured to control the bias voltage in relation to at least one of a voltage at the first node and a voltage at the second node.

Abstract: The disclosure relates to a bandgap reference voltage circuit, in which an output reference voltage is stable with respect to temperature and other variations. Example embodiments include a bandgap reference voltage circuit comprising an output voltage circuit and a plurality, n, of offset amplifiers connected between first and second voltage rails, each of the plurality of offset amplifiers comprising a differential pair of transistors that together define an offset between an input voltage at an input and an output of the amplifier, the offset amplifiers being chained together and connected to the output voltage circuit that provides a bandgap reference voltage dependent on a sum of the offsets of the plurality of offset amplifiers.

Abstract: A power module for operating a vehicle, in particular an electric vehicle and/or a hybrid vehicle, comprising numerous semiconductor components, which form at least one topological switch; an input contact for supplying an input current to the semiconductor components; a control electronics for controlling the semiconductor components, to generate an output current based on the input current; an output contact for outputting the output current; wherein the control electronics is configured to set a gate current for one of the semiconductor components based on one or more status parameters for the semiconductor component.

Abstract: A voltage-glitch detection and protection circuit and method are provided. Generally, circuit includes a voltage-glitch-detection-block (GDB) and a system-reset-block coupled to the GDB to generate a reset-signal to cause devices in a chip including the circuit to be reset when a voltage-glitch in a supply voltage (VDD) is detected. The GDB includes a voltage-glitch-detector coupled to a latch. The voltage-glitch-detector detects the voltage-glitch and generates a PULSE to the system-reset-block and latch. The latch receives the PULSE and generates a PULSE_LATCHED signal to the system-reset-block to ensure the reset-signal is generated no matter a width of the PULSE. In one embodiment, the latch includes a filter and a sample and hold circuit to power the latch, and ensure the PULSE_LATCHED signal is coupled to the system-reset-block when a voltage to the GDB or to the latch drops below a minimum voltage due to the voltage-glitch.

Abstract: A reference voltage circuit includes: a first and a second NPN transistor having a collector and a base shorted and diode-connected, the second NPN transistor having an emitter connected to a first potential node and operating at a higher current density; a first resistor connected in series with the first NPN transistor; a second resistor having one end connected to a circuit with the first NPN transistor and the first resistor connected in series; a third resistor having one end connected to the collector of the second NPN transistor; a connection point to which the other ends of the second and the third resistor are connected; an arithmetic amplifier circuit having an inverting input terminal, a non-inverting input terminal, and an output terminal respectively connected to the second resistor, the third resistor, and the connection point; and a current supply circuit connected to the collector of the first NPN transistor.

Abstract: A thermal sensor in some embodiments comprises two temperature-sensitive branches, each including a thermal-sensing device, such as one or more bipolar-junction transistors, and a current source for generating a current density in the thermal-sensing device to generate a temperature-dependent signal. The thermal sensor further includes a signal processor configured to multiply the temperature-dependent signal from the branches by respective and different gain factors, and combine the resultant signals to generate an output signal that is substantially proportional to the absolute temperature the thermal sensor is disposed at.

Abstract: Provided is a source driver that is used for supplying a voltage corresponding to a gradation value of a video signal to a data line of a display unit, the source driver including: a resistor having an end to which a predetermined power supply voltage is applied; and a current source that is connected to another end of the resistor, the amount of current of the current source being controlled according to the gradation value of the video signal, the voltage corresponding to the gradation value of the video signal being supplied from the other end of the resistor.

Abstract: A bandgap reference voltage generator can include a bandgap core circuit configured to output at least one control voltage. The bandgap reference voltage generator can further include feedback circuitry that can be configured to receive a control voltage outputted by the bandgap core circuit or another control voltage generated based on the control voltage, and output a current. The current can be outputted such that the current is sourced to or sank from the bandgap core circuit. The feedback circuitry can be further configured to generate a bandgap reference voltage. When the current is sourced to the bandgap core circuit, the bandgap reference voltage can be greater than a threshold value. Similarly, when the current is sank from the bandgap core circuit, the bandgap reference voltage can be less than the threshold value.

Abstract: An integrated circuit (IC) includes a self-biased circuit and a start-up circuit for the self-biased circuit. The self-biased circuit generates a start-up indicator signal and an output signal. The start-up indicator signal indicates whether the self-biased circuit has started up. The start-up circuit includes a comparator, a start-up controller, and a peak controller. The comparator compares the start-up indicator signal with a reference signal generated based on supply voltages, and generates a comparison signal. The start-up controller controls a start-up of the self-biased circuit when the comparison signal is at a first logic state. Further, when the comparison signal transitions from the first logic state to a second logic state, the peak controller controls the output signal to maintain one of a voltage level and a current level of the output signal below a peak limit.

Abstract: An offset drift compensation circuit for correcting offset drift that changes with temperature. In one example, offset drift compensation circuit includes a low temperature offset compensation circuit and a high temperature offset circuit. The low temperature offset compensation circuit is configured to compensate for drift in offset at a first rate below a selected temperature. The high temperature offset compensation circuit is configured to compensate for drift in offset at a second rate above the selected temperature. The first rate is different from the second rate.

Abstract: An operating circuit is provided. A first N-type transistor determines whether to create an open circuit between a core circuit and a ground terminal according to the voltage level of a specific node. An electrostatic discharge (ESD) protection circuit is coupled between an input/output pad and the core circuit to prevent an ESD current from passing through the core circuit. The ESD protection circuit includes a detection circuit and a releasing element. The detection circuit determines whether there is an ESD event at the input/output pad and generates a first detection signal according to the detection of the ESD event at the input/output pad. The releasing element provides a release path according to the first detection signal to release the ESD current. A control circuit controls the voltage level of the specific node according to the first detection signal.

Abstract: Methods, apparatus, systems and articles of manufacture are disclosed for temperature insensitive voltage supervisors. An example apparatus includes a PTAT generation circuit including an output terminal: a first resistor having a first terminal and a second terminal, a second resistor having a third terminal and a fourth terminal, the third terminal coupled to the second terminal at a first node, a first transistor including a base terminal coupled to the fourth terminal of the second resistor at a second node, and a first current terminal coupled to the fourth terminal of the second resistor, a comparator including, a first input terminal coupled to the output terminal of the PTAT generation circuit at a third node, a second input terminal coupled to the second terminal and third terminal, and a third resistor having a fifth terminal coupled to the third terminal and the second input terminal at a fourth node.

Abstract: A semiconductor device may include a bandgap circuit that outputs a reference voltage. The semiconductor device may also include a startup circuit coupled to the bandgap circuit. The startup circuit may connect a voltage source to a node that corresponds to an output of the bandgap circuit in response to the bandgap circuit being initialized. The startup circuit may also disconnect the voltage source from the node in response to the reference voltage being greater than a threshold.

Abstract: An emergency dimming apparatus including a control input pass-through configured to receive a control signal, a control output configured to output the control signal to a driver, and a controller. The controller includes an electronic processor and a memory. The controller is configured to monitor a line voltage, determine if the line voltage has crossed a threshold, disconnect the control input pass-through when the line voltage has crossed the threshold, output an output voltage when the line voltage has crossed the threshold, and output an emergency control signal, via the control output, when the line voltage has crossed the threshold.

Abstract: A signal generating device includes: a first circuit arranged to generate a first current to a first bipolar junction transistor therein; a second circuit coupled to the first circuit via an output terminal for generating a second current to a second BJT therein; and a first control circuit coupled to the first circuit and the second circuit, for generating a first adjusting current and a second adjusting current to the first circuit and the second circuit for adjusting the first current and the second current such that the first circuit and the second circuit outputs a temperature-dependent signal on the output terminal.

Abstract: An integrated circuit includes a digital circuit and an energy management circuit. The digital circuit operates with an internal power supply voltage in synchronism with a clock signal and comprises complementary metal-oxide-semiconductor (CMOS) transistors. The energy management circuit has an input for receiving an external power supply voltage and an output for providing the internal power supply voltage. The energy management circuit is thermally coupled to the digital circuit and sets the internal power supply voltage to a nominal voltage when a temperature of the digital circuit is greater than a boost temperature. The energy management circuit boosts the internal power supply voltage to a boosted voltage greater than the nominal voltage when the temperature of the digital circuit is less than the boost temperature.

Abstract: A regulation circuit is provided. The regulation circuit is embedded in a front-end module, and provides a regulated voltage to a decoder based on a power supply voltage. The regulation circuit includes a first current regulating circuit connected between a power supply voltage terminal and a first connection node and configured to regulate a level of a first current, a first voltage regulating circuit connected between the first connection node and a ground node, and configured to receive the first current to regulate a level of a first voltage, a second voltage regulating circuit connected between the power supply voltage terminal and an output node, and configured to generate an output voltage based on the first voltage, and a second current regulating circuit connected between the output node and the ground node, and configured to stabilize the output voltage.

Abstract: A low dropout (LDO) regulator is configured to generate an LDO voltage. The LDO regulator includes at least one current mirror and at least one resistor. The at least one current mirror operates in a sub-threshold region. A first terminal of the at least one resistor is directly coupled to the at least one current mirror. A second terminal of the at least one resistor is directly coupled to a power line.

Abstract: The present invention discloses a power supply powering-on structure, which comprises an LDO module, a bandgap reference module, a voltage detection module, a bias module and a switch module; the working voltage of the LDO module, the voltage detection module and the bias module adopts external power supply voltage; the working voltage of the bandgap reference module adopts LDO output voltage; the switch module provides switching connection between the output of the bias module and the output of the bandgap reference module for a reference voltage input end and a bias current input end of the LDO module. The present invention can adopt internal power supply voltage to supply power to the bandgap reference module and can also solve the problem that the internal power supply voltage restricts the powering-on and starting of the bandgap reference module.

Abstract: A reference voltage generator comprises: an amplifier; a capacitor network including one or more capacitors; and a switch control circuit to control connectivity of the capacitor network with respect to the input/output nodes of the amplifier. During operation, the switch control circuit controls connectivity of a first capacitor (in the capacitor network) in and out of a feedback path of the amplifier to produce a substantially constant reference voltage. For example, the reference voltage generator provides input offset voltage correction of the amplifier via repeatedly switching between: i) a first mode in which the first capacitor is absent from the feedback path of the amplifier during charging of the first capacitor, and ii) a second mode of inserting the charged first capacitor into the feedback path of the amplifier. Correction of the input offset voltage of the amplifier results in generation of a more accurate reference voltage over temperature.

Abstract: A band-gap reference start-up circuit includes a pull-up unit, a bias current unit, and a start-up unit. The pull-up unit and the bias current unit are coupled to a control node. The start-up unit is coupled to a trigger terminal of the band-gap voltage reference circuit and the control node. During a start-up process of the band-gap voltage reference circuit, the bias current unit is enabled to generate a bias current for pulling down a voltage of the control node, the start-up unit is enabled to generate a start-up current for raising a voltage of the trigger terminal to enable the band-gap voltage reference circuit when the voltage of the control node is pulled down by the bias circuit unit, and the pull-up unit is enabled to generate the pull-up current for raising the voltage of the control node when the band-gap voltage reference circuit is enabled.

Abstract: A reference voltage generation circuit including: a first diode including a first conductive area; a second diode including a second conductive area that is larger than the first conductive area; a generation section configured to generate a reference voltage using a voltage based on the first diode and a voltage based on the second diode; and a first capacitor connected between a node of dividing resistors and an output of the generation section, the dividing resistors being connected between the output of the generation section and the second diode.

Abstract: A semiconductor device and a method of generating a power on reset signal that can reliably perform power on reset on an internal circuit and subsequently cancel the reset state regardless of environmental temperature are provided. The semiconductor device according to the disclosure includes: a voltage divider circuit dividing a power supply voltage to obtain first and second voltages having different voltage values; a first transistor receiving the first voltage at the control electrode to generate a first current; a second transistor receiving the second voltage at the control electrode to generate a second current; a current comparing part comparing the first and second currents to generate a current comparison result signal representing a comparison result; and a reset signal generating part generating a power on reset signal having a first level that prompts reset or a second level that prompts reset cancelation based on the current comparison result signal.

Abstract: The reference voltage generator includes an output terminal, first to fourth resistors, first to fourth transistors, and a diode unit. The first transistor is coupled to the second transistor. The first resistor is coupled between the second transistor and a second reference voltage terminal. The first resistor is also coupled to the first transistor. One terminal of the diode unit is coupled to the output terminal, and the other terminal of the diode unit is coupled to the second and third resistors. The second and third resistors are also coupled to the first and second transistors, respectively. The third transistor is coupled between the fourth resistor and the second reference voltage terminal, and includes a control terminal coupled to the second transistor. The fourth transistor is coupled between a first reference voltage terminal and the diode unit. The fourth transistor is also coupled to the fourth resistor.

Abstract: A charging circuit includes a power conversion circuit, an inductor, and at least one conversion capacitor. The power conversion circuit includes a conversion switch circuit and a conversion control circuit. The conversion switch circuit includes an upper switch, a lower switch, and at least one auxiliary switch. In a switching conversion mode, the conversion control circuit operates the conversion switch circuit to switch the inductor to plural voltage levels repetitively for converting an input power to a charging power to charge a battery by switching power conversion. In a capacitive conversion mode, the conversion control circuit operates the conversion switch circuit to switch the conversion capacitor between two of voltage division nodes periodically for converting the input power to the charging power by capacitive power conversion.

Abstract: A bandgap reference circuit includes a circuit for high-order temperature curvature compensation; and a circuit for low output impedance and current drive capability, wherein an output voltage of the bandgap reference circuit can be independently adjusted to be either above or below a silicon bandgap voltage without impacting temperature curvature.

Abstract: An electrical switch responds to acoustic inputs. A microphone integrated into the electrical switch generates electrical signals in response to the acoustic inputs. A network interface integrated into the electrical switch provides addressable communication with controllers, computers, and other networked devices. The electrical switch may thus be installed or retrofitted into the electrical wiring of all homes and businesses. Users may thus speak voice commands, which are received by the electrical switch and sent for voice control of appliances and other automation tasks.

Abstract: A source-grounded amplifier circuit supplied with a signal of an error amplifier circuit, and an output transistor supplied with a control voltage of the source-grounded amplifier circuit are provided. The source-grounded amplifier circuit has, in a signal path, a current limiting circuit including a cascode circuit controlled by a voltage having a positive temperature coefficient. A voltage regulator capable of reducing a dropout voltage of an output voltage without exceeding a gate breakdown voltage of the output transistor is provided.

Abstract: A reference voltage generator circuit is provided with a first voltage generator circuit that generates a first direct-current voltage; a second voltage generator circuit that generates a second direct-current voltage; and an operational amplifier that generates a voltage difference between the first and second direct-current voltages. The reference voltage generator circuit generates a reference voltage based on a band gap by controlling currents flowing in the first and second voltage generator circuits based on the voltage difference, and includes a third voltage generator circuit including a PNP bipolar transistor, which is connected in parallel with the first voltage generator circuit. The third voltage generator circuit generates a third direct-current voltage corresponding to a base current flowing in the PNP bipolar transistor, and applies it to the operational amplifier with the first direct-current voltage.

Abstract: A bandgap reference circuit and a high-order temperature compensation method are disclosed. The bandgap reference circuit includes: a starting circuit, a bias circuit and a high-order compensated bandgap reference voltage generating circuit, where a compensation method of the high-order compensated bandgap reference voltage generating circuit is to perform curvature correction by using a sub-threshold current of a CMOS transistor to obtain a high-order temperature-compensated bandgap reference voltage source circuit. The present circuit has the advantages that a manner not increasing circuit complexity can be adopted for implementation, the accuracy of a bandgap reference source can be greatly improved, and power consumption, chip area and cost are reduced.

Abstract: Advanced detectors for vector signaling codes are disclosed which utilize multi-input comparators, generalized on-level slicing, reference generation based on maximum swing, and reference generation based on recent values. Vector signaling codes communicate information as groups of symbols which, when transmitted over multiple communications channels, may be received as mixed sets of symbols from different transmission groups due to propagation time variations between channels. Systems and methods are disclosed which compensate receivers and transmitters for these effects and/or utilize codes having increased immunity to such variations, and circuits are described that efficiently implement their component functions.

Abstract: Various technologies pertaining to a high-impedance current source are described herein. The current source outputs a substantially constant current by way of a first transistor that draws current from a supply. The current source is configured to feed-back noise from the supply to a feedback resistor at an input of an operational amplifier (op-amp) by way of a second transistor. The feedback resistor and the op-amp are configured such that responsive to receiving the supply noise feedback, the op-amp drives a gate voltage of the first transistor to cause the first transistor to reject the supply noise and cause the output of the current source to remain substantially constant.

Abstract: A photoelectric conversion device includes a plurality of light receiving elements, a plurality of A/D conversion units, and an offset giving unit. The light receiving elements are arrayed in one direction and each convert a light signal into an electrical signal. The A/D conversion units perform A/D conversion on the electrical signals output from the light receiving elements. The offset giving unit gives an offset voltage of a certain level to the electrical signals output from the light receiving elements without flowing a steady current before the electrical signals are input into the A/D conversion units.

Abstract: A voltage reference circuit includes a bandgap circuit and a temperature compensation circuit. The temperature compensation circuit includes a first trim circuit, a second trim circuit, and a resistive digital-to-analog converter. The resistive digital-to-analog converter is coupled to the first trim circuit, the second trim circuit, and the bandgap circuit. The resistive digital-to-analog converter is configured to generate a temperature compensation voltage, and to provide the temperature compensation voltage to the bandgap circuit.

Abstract: According to one embodiment, an apparatus is disclosed. The apparatus includes a first power supply having a first fixed voltage, a second power supply having a second fixed voltage, a plurality of circuits coupled to the first power supply via a first switch and the second power supply via a second switch, and a power control circuit configured to selectively enable one of the first switch and the second switch responsive to power demand information.

Abstract: A device for current sensing of a power transistor system having a power transistor, a first series circuit which includes a first transistor and a first resistance, the first resistance disposed in a load circuit of the first transistor, a second series circuit which has a second transistor and a second resistance disposed in a load circuit of the second transistor, the first series circuit, the second series circuit and the power transistor situated in parallel with one another, the first resistance connected to the first transistor in an electrically conductive manner when the first transistor is switched on, and the second resistance connected to the second transistor in an electrically conductive manner when the second transistor is switched on, and a gate terminal of the first transistor is connected in an electrically conductive manner to a gate terminal of the power transistor when the power transistor is switched on.

Abstract: A power semiconductor circuit includes a power semiconductor device for switching a load, and a comparator which is directly or indirectly connected to the power semiconductor device at a connection point for the load by means of a first input and to which a predefined or predefinable reference voltage can be fed at a second input, the power semiconductor device being activatable by means of an output of the comparator.

Abstract: A charge pump assembly allowing MEMS microphones being temperature-compensated in a large temperature range and corresponding microphones are provided. An assembly includes a charge pump and a bias circuit electrically connected to the charge pump. A bias voltage provided by the bias circuit has a temperature dependence.

Abstract: A bias current generator is disclosed that include an operational amplifier that is self-biased during an inactive period with a bias current to bias a gate of an output transistor. Since the inactive period bias is close to an active period bias applied to the gate of the output transistor during active operation of the bias current generator, the speed of transition from the inactive period to the active period is enhanced by the self-biasing of the operational amplifier.

Abstract: A duty cycled voltage reference circuit is turned on and off synchronously with the operation of a second, reference-consuming, duty-cycled circuit to which it supplies a reference. When the reference consuming circuit no longer has need of the reference, the voltage reference circuit itself is then also powered down. The reference circuit is then powered back up for the next duty cycle sufficiently in advance of the reference consuming circuit such that any auto-zeroing and noise filtering operations required by the reference circuit are complete and a stable reference voltage is output at least simultaneously with, or slightly before, the reference consuming circuit begins to make use of the voltage reference signal. In this manner, synchronous duty-cycled operation of the voltage reference circuit with the reference-consuming circuit is obtained, with the consequence that power consumption by the reference circuit is reduced.

Abstract: A bandgap reference voltage circuit includes a bandgap reference voltage generator and a startup current generator. The bandgap reference voltage generator is configured to generate a first voltage and a second voltage. The startup current generator includes a voltage comparator and a switch. The voltage comparator is connected to the bandgap reference voltage generator and is configured to compare the first voltage with the sum of the second voltage and an offset voltage and to generate a comparison result. The switch is connected between the voltage comparator and the bandgap reference voltage generator and is configured to selectively connect a supply voltage to the bandgap reference voltage generator based on the comparison result. A device that includes the circuit is also disclosed. A method of operating the circuit is also disclosed.

Abstract: A band gap circuit with offset voltage error correction including a diode junction circuit, an error amplifier, a current device, a bias current generator, a calibration circuit, and a mode control circuit. During a normal mode of operation, the error amplifier monitors feedback nodes of the diode junction circuit and drives the current device to provide a control current to the diode junction circuit. During a calibration mode, the current device is decoupled from the diode junction circuit and the inputs of the error amplifier are shorted together, the bias generator circuit sinks a bias current from the current device and separately sources a bias current to the diode junction circuit such that the error amplifier operates as a comparator, and the calibration circuit monitors the output of the current device while adjusting a trim current of the error amplifier to minimize an offset voltage error of the error amplifier.

Abstract: A standard voltage circuit includes an operational amplifier, first and second diodes, a resistance element, and a dummy leak generation circuit. The first diode is electrically connected to a first node of a first line which is disposed on an output terminal side of the operation amplifier and is electrically connected to a first input terminal of the operation amplifier through the first node. The second diode is electrically inserted connected to a second node of a second line which is disposed on the output terminal side of the operation amplifier and is electrically connected to a second input terminal of the operation amplifier through the second node. The resistance element is electrically connected to the second node in series with the second diode. The dummy leak generation circuit is electrically connected to one of the first line and the second line.

Abstract: According to one embodiment, a voltage generation circuit includes a first boost circuit, a voltage division circuit, a first detection circuit, a capacitor and a first switch. The first boost circuit outputs a first voltage. The voltage division circuit divides the first voltage. The first detection circuit is configured to detect a first monitor voltage supplied to the first input terminal, based on a reference voltage which is supplied to a second input terminal of the first detection circuit, and to control an operation of the first boost circuit. The capacitor is connected between an output terminal of the first boost circuit and the first input terminal of the first detection circuit. The first switch cuts off a connection between the capacitor and the first detection circuit, based on an output signal of the first detection circuit, until the first voltage is output from the first boost circuit.

Abstract: A self-starting bandgap reference circuit comprises a bias current source configured to provide a bias current. A bandgap core coupled to the bias current source includes a first device configured to receive the bias current and provide a first current output based on the bias current and a second device configured to receive the bias current and provide a second current output based on the bias current. A difference mirror coupled to the first device and the second device receives the first current output and the second current output and is configured to provide a difference current between the second current output and the first current output that is a proportional-to-absolute temperature current. A voltage reference output and a current reference output coupled to the difference mirror receives the proportional-to-absolute temperature current and provides a voltage reference and a current reference based on the proportional-to-absolute temperature current.

Abstract: A circuit for implementing a multifunction output generator is described. The circuit comprises an amplifier circuit having a first input and a second input; a voltage generator coupled at a first node to a first input of the amplifier circuit; a controllable current source configured to provide a variable current to the first node; and a switching circuit enabling the operation of the amplifier circuit in a first mode for sensing a temperature and a second mode for providing a reference voltage. A method of implementing a multifunction output generator is described.

Abstract: A control circuit disposed in a connection line including a first power pin and a second power pin and including a native N-type transistor, a first impedance unit, and a second impedance unit is provided. The native N-type transistor includes a first gate, a first drain and a first source. The first drain is coupled to the first power pin. The first impedance unit is coupled between the first source and the second power pin. The second impedance unit is coupled between the first drain and the first gate. When the voltage level of the first power pin is equal to a pre-determined level, the first gate of the native N-type transistor receives an adjusting signal to adjust an equivalent impedance of the native N-type transistor.