Hall Plate Magnetometers Patents (Class 324/251)
  • Patent number: 10386392
    Abstract: A Hall element driving circuit includes: a signal switching unit which is disposed between a power supply, which outputs a current, and a Hall element having first and second terminals and performs switching control between a first switching state that supplies the current to the first terminals and a second switching state that supplies the current to the second terminals; a switching control unit that controls transitions between the first switching state and the second switching state; and a switching unit that is disposed between the power supply and the signal switching unit and controls switching between an on state where the current is supplied and an off state where the current is stopped. The switching control unit controls transitions between the on and off states and executes switching control over the signal switching unit only when the switching unit is in the off state.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: August 20, 2019
    Assignee: HIOKI DENKI KABUSHIKI KAISHA
    Inventors: Atsushi Nakayama, Masakazu Ikeda, Youhei Sakurai
  • Patent number: 10382024
    Abstract: An omnipolar magnetic sensor system includes an input stage and a behavior component. The input stage is configured to receive a source signal and to selectively chop the source signal. Further, the input stage is configured to balance the source signal using behavior parameters and generate a balanced source signal.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: August 13, 2019
    Assignee: Infineon Technologies AG
    Inventor: Mihai Alexandru Ionescu
  • Patent number: 10371850
    Abstract: A magnetic sensor for borehole magnetometer includes an upper-opened pipe-shaped housing; a frame installed at an inside of the housing; an upper-opened magnetic sensor part installed at a bottom side of the frame; a lid covering the opened upper side of the magnetic sensor part; and a magnetic sensor disposed at an inside of the magnetic sensor part to measure a magnetic force, wherein an upper side and a bottom side of the magnetic sensor is respectively installed with a spring, a bottom side of the lid and the magnetic sensor part are formed with a fixing groove for fixing an upper spring and a bottom spring each installed at an upper side and a bottom side of the magnetic sensor.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: August 6, 2019
    Assignee: AAT CO. LTD.
    Inventors: Kyung Soo Bahk, Chang Shik Lee, Kyu Jung Kim, Sang-Mook Lee
  • Patent number: 10373051
    Abstract: Embodiments are directed to a two-terminal resistive processing unit (RPU) having a first terminal, a second terminal and an active region. The active region effects a non-linear change in a conduction state of the active region based on at least one first encoded signal applied to the first terminal and at least one second encoded signal applied to the second terminal. The active region is configured to locally perform a data storage operation of a training methodology based at least in part on the non-linear change in the conduction state. The active region is further configured to locally perform a data processing operation of the training methodology based at least in part on the non-linear change in the conduction state.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: August 6, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tayfun Gokmen, Seyoung Kim, Yurii A. Vlasov
  • Patent number: 10352969
    Abstract: Systems and methods described herein are directed towards integrating a shield layer into a current sensor to shield a magnetic field sensing element and associated circuitry in the current sensor from electrical, voltage, or electrical transient noise. In an embodiment, a shield layer may be disposed along at least one surface of a die supporting a magnetic field sensing element. The shield layer may be disposed in various arrangements to shunt noise caused by a parasitic coupling between the magnetic field sensing element and the current carrying conductor away from the magnetic field sensing element.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: July 16, 2019
    Assignee: Allegro MicroSystems, LLC
    Inventors: Shaun D. Milano, Bryan Cadugan, Michael C. Doogue, Alexander Latham, William P. Taylor, Harianto Wong, Sundar Chetlur
  • Patent number: 10353019
    Abstract: A high dynamic range magnetometer architecture and method are disclosed. In an embodiment, a magnetometer sensor comprises: a variable magnetic gain stage including a plurality of selectable signal gain paths, each signal gain path including a magnetic sensor and a magnetic flux concentrator, and for each signal gain path the magnetic flux concentrator being positioned a different distance from the magnetic flux concentrator to provide a different magnetic gain for the signal gain path; a variable magnetic sensing stage coupled to the variable magnetic gain stage, the variable magnetic sensing stage operable to provide variable magnetic sensing to each signal gain path; and a gain control stage coupled to the variable magnetic sensing stage, the gain control stage operable to select one of the signal gain paths and to provide signal conditioning to the selected signal gain path.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: July 16, 2019
    Assignee: Apple Inc.
    Inventor: Jian Guo
  • Patent number: 10337887
    Abstract: A magnetic sensor includes: a magnetic converging plate; Hall elements disposed on one surface side of the magnetic converging plate; wires connecting with the Hall elements; and a signal processing circuit that connects with these wires to receive a signal from the Hall element. Between the Hall element and the signal processing circuit, the two wires cross while being spaced apart from each other in a depth direction of a substrate, and forms a compensation loop between a cross of the two wires and the circuit, and in a planar view as seen in a depth direction, at least part of a region occupied by the compensation loop is covered by the magnetic converging plate. The compensation loop compensates an induced electromotive force caused to the closed loop formed by the wires including the Hall element.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: July 2, 2019
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Ryuji Nobira, Takenobu Nakamura
  • Patent number: 10333056
    Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 25, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Bin Liu, Eng Huat Toh, Ruchil Kumar Jain
  • Patent number: 10197420
    Abstract: A magnetic sensor circuit includes: a first Hall element configured to output a first signal and a second signal; a second Hall element configured to output a third signal and a fourth signal; a signal switching unit configured to select signals among the first to the fourth signal to provide at least two different types of signals as first output signals, by selecting signals each having the signal component having the opposite phase when the offset components each have the same phase, and by selecting signals each having the signal component having the same phase when the offset components each have the opposite phase; and a signal processing unit configured to output second output signals in which the respective offset components of the first output signals are reduced.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: February 5, 2019
    Assignee: ABLIC INC.
    Inventor: Ryosuke Mori
  • Patent number: 10191089
    Abstract: A current sensing assembly includes a conductor having a first side, a second side opposite the first side, a third side, and a fourth side opposite the third side. The first side has a first notch formed therein and the second side has a second notch formed therein opposite the first notch. The current sensing assembly also includes a sensor assembly including a first magnetic sensor disposed in the first notch or proximate to the third side of the conductor between the first and second notches, and a second magnetic sensor disposed in the second notch or proximate to the fourth side of the conductor between the first and second notches.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: January 29, 2019
    Assignee: EATON INTELLIGENT POWER LIMITED
    Inventors: Mark Allan Juds, Jerome Kenneth Hastings
  • Patent number: 10175270
    Abstract: An integrated current sensor system has a printed circuit board with a magnetic field sensor with a sensor interface. The printed circuit board has a first side on which, isolated from the printed circuit board, a first current conductor is arranged with a longitudinal edge of a portion of the first current conductor being proximate to a sensitive area of sensor. The circuit board has a second side on which a second current conductor is, isolated from the printed circuit board, arranged, wherein a longitudinal edge of a portion of the second current conductor is arranged proximate to the sensitive area. The first and the second current conductor are electrically connected with at least one conductive via.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: January 8, 2019
    Assignee: ams AG
    Inventor: Harald Etschmaier
  • Patent number: 10094889
    Abstract: Embodiments relate to vertical Hall effect devices comprising Hall effect structures with three contacts in each Hall effect region. In one embodiment, the contacts are interconnected with terminals such that the Hall effect device has symmetry and nominally identical internal resistances in the absence of externally applied magnetic fields. Embodiments are capable of operating in multiple operating phases, such that spinning can be used to measure field redundantly and improve magnetic field measurement accuracy.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: October 9, 2018
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 10006946
    Abstract: A system is provided, comprising: a magnet flux sensor; a first conductor proximate to the magnetic field sensor; a current controller coupled to the first wire; a second conductor proximate to the magnetic field sensor; wherein the first current controller and the second current controller ensure that current do not travel in opposite directions.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: June 26, 2018
    Assignee: Texas Instruments Incorporated
    Inventor: Siva RaghuRam Prasad Chennupati
  • Patent number: 9960647
    Abstract: One embodiment of an enhanced flux-density magnet comprises a magnetic material with two magnetic poles and one magnetic pole-area smaller than the other magnetic pole-area. Because the magnetic field at both pole-areas is equal but the magnetic pole-areas are unequal, the magnetic flux-density is proportionally greater at the magnetic pole with a smaller area than the magnetic pole with the larger area and greater than if the magnetic pole-areas were equal.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: May 1, 2018
    Assignee: Vanntec LLC
    Inventor: Charles Stuart Vann
  • Patent number: 9935259
    Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: April 3, 2018
    Assignee: Infineon Technologies AG
    Inventors: Stefan Kolb, Markus Eckinger
  • Patent number: 9921273
    Abstract: The present embodiment relates to a Hall electromotive force signal detection circuit. The third switch circuit selects a terminal position for applying a driving current out of four terminals of the third Hall element and switches the terminal position among the first terminal, the second terminal, the fourth terminal, and the third terminal in this order. The fourth switch circuit switches a terminal position for applying the driving current to the terminal in turn, among the first to the fourth terminal of the fourth Hall element, such that this terminal position is different from that selected by the third switch circuit and faces the terminal position for injecting the driving current in the third Hall element. A chopper clock generation circuit supplies a chopper clock signal with different four phases to the third switch circuit and to the fourth switch circuit.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: March 20, 2018
    Assignee: Asahi Kasei Microdevices Corporation
    Inventor: Yoshiyasu Nishimura
  • Patent number: 9897464
    Abstract: In one aspect, a magnetic field sensor includes first and second magnetic field sensing elements having respective first and second maximum response axes. The first and second maximum response axes point along respective first and second different coordinate axes. In response to a magnetic field, the first and second magnetic field sensing elements are operable to generate first and second magnetic field signals. The magnetic field sensor includes an electronic circuit coupled to receive the first and the second magnetic field signals. The electronic circuit is configured to determine a magnitude of a vector sum of the first and the second magnetic field signals and provide one or more signals in response to the magnitude of the vector sum determined.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: February 20, 2018
    Assignee: Allegro MicroSystems, LLC
    Inventors: Joseph James Judkins, III, Ryan Jon Metivier, Gerardo A. Monreal, Bruno Luis Uberti
  • Patent number: 9841471
    Abstract: A Hall element is integrated on a single substrate and is capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes a P-type semiconductor substrate layer formed of P-type silicon, a vertical magnetic field detection N-type doped region formed on the P-type semiconductor substrate layer, and eight horizontal magnetic field detection N-type doped regions formed so as to surround the vertical magnetic field detection N-type doped region.
    Type: Grant
    Filed: January 18, 2016
    Date of Patent: December 12, 2017
    Assignee: SII Semiconductor Corporation
    Inventors: Takaaki Hioka, Mika Ebihara
  • Patent number: 9817083
    Abstract: Magnetic field sensors and associated techniques use a Hall effect element in a chopping arrangement in combination with a feedback path configured to reduce undesirable spectral components generated by the chopping.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: November 14, 2017
    Assignee: Allegro MicroSystems, LLC
    Inventor: Hernan D. Romero
  • Patent number: 9818934
    Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: November 14, 2017
    Assignee: Infineon Technologies AG
    Inventors: Stefan Kolb, Markus Eckinger
  • Patent number: 9802009
    Abstract: A needle magnetizing arrangement (1) comprising a controller (4) adapted to generate a first magnetic field (F) for magnetizing a needle (2), and a magnetic field sensor (5) adapted to generate a signal based on a second magnetic field (FR) of the needle (2).
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: October 31, 2017
    Assignee: Sanofi-Aventis Deutschland GMBH
    Inventors: Christian Nessel, Daniel Auernhammer
  • Patent number: 9746500
    Abstract: A current sensing apparatus is disclosed that provides improved immunity to external magnetic fields, enhanced resolution, and a wide sensing range. The current sensing apparatus includes a conductor having a plurality of current path regions formed therein, which are separated by a pair of slots formed through the conductor. A pair of magnetic field sensors is positioned relative to the pair of slots to sense a magnetic field produced by a current flow through one of the current path regions.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: August 29, 2017
    Assignee: Eaton Corporation
    Inventors: Mark Allan Juds, Dale Richard Ludwig
  • Patent number: 9741924
    Abstract: A magnetic sensor has a pair of Hall elements formed in spaced-apart relationship on a front surface of a semiconductor substrate. A die pad is bonded to a back surface of the semiconductor substrate and overlaps the Hall elements. The die pad has formed therein a magnetic converging plate holder having a recessed portion, and a magnetic converging plate having the same shape and size as the recessed portion is fitted in the recessed portion of the magnetic converging plate holder.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: August 22, 2017
    Assignee: SII Semiconductor Corporation
    Inventors: Takaaki Hioka, Mika Ebihara
  • Patent number: 9709639
    Abstract: A Hall effect sensor with multiple Hall effect elements, each of the Hall effect elements having a first contact terminal, a second contact terminal, and a third contact terminal arranged along a straight line. The multiple Hall effect elements are electrically connected in series in a closed circuit. The second contact terminals of the Hall effect elements are supply voltage connections or Hall voltage pickoffs, and the applicable second contact terminal of the Hall effect element is a center contact of the Hall effect element. The Hall effect elements form two pairs, and the Hall effect elements of one pair each measure the same component of a magnetic field and an operating current is impressed on the series circuit in the two Hall effect elements of this one pair, and a supply voltage is applied to the Hall effect elements of the other pair.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: July 18, 2017
    Assignees: TDK-Micronas GmbH, Albert-Ludwigs-Universitaet Freiburg
    Inventors: Christian Sander, Oliver Paul
  • Patent number: 9702943
    Abstract: A single chip push-pull bridge-type magnetic field sensor. The sensor comprises a substrate, bonding pads, magnetoresistance sensing elements, and flux concentrators, wherein the magnetoresistance sensing elements are positioned in the clearances of the adjacent flux concentrators, and the directions of the pinning layers of the magnetoresistance sensing elements are identical. The flux concentrators are divided into a push arm type and a pull arm type, the included angle between one type and an X-axis forward direction is positive, and the included angle between the other type and the X-axis forward direction is negative. The working principle of the sensor is that the magnetic field along the X-axis direction in the clearances of the flux concentrators are oppositely oriented. The sensor has the advantages of small size, low cost, simplicity in manufacturing, high sensitivity, good linearity, high sensitivity, wide working dynamic range, and the like.
    Type: Grant
    Filed: July 29, 2014
    Date of Patent: July 11, 2017
    Assignee: Multidimension Technology Co., Ltd.
    Inventor: James Geza Deak
  • Patent number: 9671474
    Abstract: A vertical Hall effect sensor having three Hall effect regions interconnected in a ring can be operated in a spinning scheme. Each Hall effect region has three contacts: the first Hall effect region includes first, second, and third contacts; the second Hall effect region has fourth, fifth, and sixth contacts, and the third Hall effect region has seventh, eighth, and ninth contacts. Interconnections between the Hall effect regions are provided such that a first terminal is connected to a third contact, a second interconnection is arranged between the second and fourth contacts, a third terminal is connected to the sixth contact, a fourth interconnection is arranged between the fifth and seventh contacts, a fifth terminal is connected to the ninth contact, and a sixth interconnection is arranged between the first and eighth contacts.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: June 6, 2017
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 9651635
    Abstract: Embodiments relate to stacks of Hall effect structures, in which the potential at the contacts of each Hall effect structure throughout a stack of Hall effect structures changes monotonically. An output associated with the Hall effect structure in each layer of the stack can be compared against the output of a counterpart Hall effect structure in another stack to ascertain the strength of an incident magnetic field.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: May 16, 2017
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 9632104
    Abstract: A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: April 25, 2017
    Assignee: Robert Bosch GmbH
    Inventors: Hubert Benzel, Christoph Schelling
  • Patent number: 9612350
    Abstract: Vibration transducers, sensors including the vibration transducers, and methods for manufacturing the same. The vibration transducer may include a magnet. The vibration transducer may include a bobbin disposed about the magnet. The vibration transducer may include a first coil disposed about the bobbin. The vibration transducer may include a controllable damping coil disposed about the bobbin. The first coil is movable relative to the magnet. The magnet is polarized with respect to the axis of the vibration transducer.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: April 4, 2017
    Assignee: SCHLUMBERGER TECHNOLOGY CORPORATION
    Inventor: Masahiro Kamata
  • Patent number: 9581660
    Abstract: An electronic device is disclosed as a part of a magnetic field sensor or a mechanical stress sensor. The electronic device includes a Hall effect region, a first contact (temporarily functioning as a first supply contact), a second contact (second supply contact), and a third contact (temporarily functioning as a first sense contact) that are arranged in or on a surface of the Hall effect region. The first contact and the third contact are arranged in a substantially symmetrical manner to each other with respect to the second contact. An electrical current distribution within the Hall effect region is influenced by a physical quantity (e.g. magnetic field strength or mechanical stress) to be measured. A sense signal tapped at the third contact is a function of the current distribution, the sense signal thus being indicative of the physical quantity. A corresponding sensing method using the electronic device is also disclosed.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: February 28, 2017
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 9568566
    Abstract: An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: February 14, 2017
    Assignee: STMicroelectronics S.r.l.
    Inventors: Dario Paci, Dino Faralli, Andrea Picco
  • Patent number: 9562931
    Abstract: Devices and methods for sensing current are described herein. One device (100) includes a base member (102) having a first leg (104, 106) and a second leg (104, 106), the legs (104, 106) defining an angle (108) therebetween, a first magnetic current sensor (110, 112) coupled to the base member (102) and positioned at a first location in a plane bisecting the angle (108), and a second magnetic current sensor (110, 112) coupled to the base member (102) and positioned at a second location in the plane bisecting the angle (108).
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: February 7, 2017
    Assignee: Honeywell International Inc.
    Inventors: Xinhui Mao, Huabin Fang
  • Patent number: 9551762
    Abstract: A magnetic field sensor and a method include a modulator coupled in a feedback arrangement and operable to modulate a calibration feedback signal with a modulator clock signal having a selected frequency and a selected relative phase operable to remove a gain error in the magnetic field sensor and in the method.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: January 24, 2017
    Assignee: Allegro MicroSystems, LLC
    Inventor: Juan Manuel Cesaretti
  • Patent number: 9535139
    Abstract: A magnetic sensor of the present invention includes a Hall-effect sensor configured to detect magnetism and an IC being configured to drive the Hall-effect sensor and perform signal processing therefor and having two or more metal interconnection layers. The Hall-effect sensor and the IC are electrically connected to each other via wire interconnections and sealed in one package. Metal interconnections on the IC to input output voltage of the Hall-effect sensor to a signal processing unit of the IC have a grade-separation junction portion in order to suppress an induced electromotive force which a change in the magnetic flux density externally applied generates at output terminals of the Hall-effect sensor, the wire interconnections connected to output electrode pads of the Hall-effect sensor, and the metal interconnections to input the output voltage of the Hall-effect sensor to the signal processing unit of the IC.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: January 3, 2017
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Sosuke Nishida, Toshinori Takatsuka
  • Patent number: 9520551
    Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: December 13, 2016
    Assignee: Infineon Tecnologies AG
    Inventors: Stefan Kolb, Markus Eckinger
  • Patent number: 9517421
    Abstract: A novelty toy, apparel, or jewelry, device for fanciful detection of ghosts, or other paranormal phenomena, through exploitation of Hall Effect, or of thermochromic material.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: December 13, 2016
    Inventor: Maureen Mae
  • Patent number: 9513348
    Abstract: A Hall electromotive force signal detection circuit combines offset cancellation means by a spinning current method of a Hall element with a continuous-time signal processing circuit. A Hall element includes first to fourth terminals, and generates a Hall electromotive force signal voltage Vhall1. Another Hall element generates another Hall electromotive force signal voltage Vhall2. A first switching circuit selects a terminal position for applying a drive current from the four terminals of the Hall element. A second switching circuit selects a terminal position for applying a drive current from the four terminals of the another Hall element, which is different from the terminal position selected by the first switching circuit. A chopper clock generation circuit supplies a chopper clock signal ?1, ?2 having two different phases to the switching circuit, and also supplies the chopper clock signal ?1, ?2 to the first and second switching circuits.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: December 6, 2016
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Shigeki Okatake, Takenobu Nakamura, Makoto Kataoka
  • Patent number: 9496867
    Abstract: Embodiments relate to Hall-controlled switch devices. In an embodiment, a Hall switch and a load switch are integrated in a single integrated circuit device. Embodiments can provide load switching and optional simultaneous logic signaling, for example to update a microcontroller or electronic control unit (ECU), while reducing space and complexity and thereby cost.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: November 15, 2016
    Assignee: Infineon Technologies AG
    Inventors: Sebastian Maerz, Jean-Marie Le Gall
  • Patent number: 9465087
    Abstract: The invention relates to a Hall effect sensor for recording the direction of a magnetic field, comprising a plurality of Hall effect sensor elements (10a, 10b) arranged in pairs, wherein each pair comprises a first Hall effect sensor element (10a) and a second Hall effect sensor element (10b) which are arranged parallel to one another. The Hall effect sensor has a first switch (34) for disconnecting the first Hall effect sensor element (10a) from a power supply (24).
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: October 11, 2016
    Assignee: Robert Bosch GmbH
    Inventors: Thomas Klotzbuecher, Harald Kazmierczak
  • Patent number: 9455768
    Abstract: A device, method, and system are disclosed for establishing wireless communications between communications devices comprising respective magnets and magnetic sensors each located on first and second communications device and aligned such that a magnet on the first communications device is aligned with a magnetic sensor on the second communications device and a magnet on the second communications device is aligned with a magnetic sensor on the first communications device. In response, a Near Field Communications (NFC) circuit contained in each of the first and second communications devices is activated and data exchanged between the first and second communications devices using a NFC communications protocol.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: September 27, 2016
    Assignee: BlackBerry Limited
    Inventors: Jason T. Griffin, Steven H. Fyke
  • Patent number: 9453892
    Abstract: Integrated circuit Hall sensor system comprising a plurality of elementary blocks (EB), each elementary block including a Hall cell (4), a differential pair (8) of an input stage of a Differential Difference Amplifier (DDA), and terminals (12a, 12b), wherein the terminals (12a, 12b) are placed laterally on opposing outer sides of each elementary block parallel to a Y axis and the plurality of elementary blocks are arranged in a juxtaposed manner to form at least one row (6a, 6b) extending along an X axis orthogonal to the Y axis and interconnected by the terminals.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: September 27, 2016
    Assignee: LEM Intellectual Property SA
    Inventors: Pavel Kejik, Serge Reymond
  • Patent number: 9448288
    Abstract: A magnetic field sensor with a plurality of magnetic field sensing elements is presented. The magnetic field sensor includes a sequences switches circuit to sequentially select from among the plurality of magnetic field signals. The magnetic field sensor further includes a memory device to store a plurality of potentiometer control values. Also included is a variable potentiometer to attenuate an offset of each one of the plurality of magnetic field signals by using a respective plurality of offset attenuation factors responsive to one or more of the plurality of potentiometer control values. A corresponding method is also described.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: September 20, 2016
    Assignee: Allegro Microsystems, LLC
    Inventor: Aurelian Diaconu
  • Patent number: 9425386
    Abstract: An electronic device includes a number of n Hall effect regions with n>1, wherein the n Hall effect regions are isolated from each other. The electronic device also includes at least eight contacts in or on surfaces of the n Hall effect regions, wherein the contacts include: a first and a second contact of each Hall effect region. A first contact of the (k+1)-th Hall effect region is connected to the second contact of the k-th Hall effect region for k=1 to n?1, and the first contact of the first Hall effect region is connected to the second contact of the n-th Hall effect region. The at least eight contacts include at least two supply contacts and at least two sense contacts. Each Hall effect region includes at most one of the at least two supply contacts and at most one of the at least two sense contacts.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: August 23, 2016
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 9423471
    Abstract: One embodiment of the present invention relates to a vertical Hall-effect device. The device includes at least two supply terminals arranged to supply electrical energy to the first Hall-effect region; and at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region. The first Hall signal is indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region. One or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: August 23, 2016
    Assignee: Infineon Technologies AG
    Inventors: Udo Ausserlechner, Mario Motz
  • Patent number: 9425385
    Abstract: A vertical Hall effect device includes at least four Hall effect regions which are partly decoupled from each other, and each of the at least four Hall effect regions has first and second opposite faces. Each of the Hall effect regions has on the first face a first contact and a second contact that are placed symmetrically with respect to a plane of symmetry at the respective Hall effect region, wherein the plane of symmetry is orientated perpendicular to a straight line between the first contact and the second contact of the respective Hall effect region. Each of the Hall effect regions has at least one contact area placed in an area around the respective plane of symmetry, wherein low ohmic connection means include at least one low ohmic connecting path connecting the contact areas of the Hall effect regions.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: August 23, 2016
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 9404990
    Abstract: Embodiments relate to reducing offset error in sensor systems. In embodiments, the sensitivity and offset of a sensor depend differently on some parameter, e.g. voltage, such that operating the sensor at two different values of the parameter can cancel the offset error. Embodiments can have applicability to stress sensors, Hall plates, vertical Hall devices, magnetoresistive sensors and others. The offset error can be reduced using a correction factor based on a first offset error of the sensor system when operated in a first phase and a second offset error of the sensor system when operated in second first phase. The sensor system can generate an output signal based on first and second output signals generated when operating in the first and second phases, respectively.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: August 2, 2016
    Assignee: Infineon Technologies AG
    Inventors: Udo Ausserlechner, Mario Motz
  • Patent number: 9389247
    Abstract: Embodiments relate to magnetic field current sensors having sensor elements for sensing at least two magnetic field components, for example Bx and By. The current in a conductor is estimated by Bx and Bx/By, wherein Bx is the primary measurement and Bx/By is a corrective term used to account for position tolerances between the sensor and the conductor. In other embodiments, the corrective term can be dBx/By, where dBx is a difference in between components sensed at different sensor elements. The particular field components can vary in embodiments; for example, the current can be estimated by By and By/Bx, or dBy/Bx or some other arrangement.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: July 12, 2016
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 9354279
    Abstract: Provided is a magnetic sensor device, which is configured to connect each terminal of a Hall element to another end of a variable resistor having one end connected to GND by switching of four switches. Thus, a detection voltage level for a magnetic field intensity can be arbitrarily set with a small-scale circuit. The detection voltage level is determined only by the resistance ratio, and hence the influence of fluctuations in power supply voltage and manufacturing fluctuations can be suppressed. This configuration can simplify signal processing and achieve higher-speed signal processing.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: May 31, 2016
    Assignee: SII SEMICONDUCTOR CORPORATION
    Inventor: Daisuke Muraoka
  • Patent number: 9349943
    Abstract: The Hall sensor semiconductor component comprises an arrangement of at least two Hall sensors (1, 2) with signal connections (11, 13, 21, 23) and supply connections (12, 14, 22, 24), and a switching network, which varies the positions of the supply connections in successive phases and connects the Hall sensors in series in each phase via the respective signal connections.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: May 24, 2016
    Assignee: ams AG
    Inventor: Georg Röhrer
  • Patent number: 9322840
    Abstract: A resistive element includes a resistive region in a semiconductor substrate, a first contact structure and a second contact structure. The semiconductor substrate includes a first main surface area. The resistive region extends in a lateral direction parallel to the main surface area and in a vertical direction perpendicular to the main surface area, and includes a first piezo-resistive coefficient for a current flow in the lateral direction and a second piezo-resistive coefficient for a current flow in the vertical direction. The first contact structure contacts a portion of a first face of the resistive region and the second contact structure contacts a portion of a second face of the resistive region. The resistive element generates a current flow distribution within the resistive region having a lateral component and a vertical component that results in a piezo-resistive coefficient of the resistive element.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: April 26, 2016
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner