Abstract: A magnetic sensor that includes a Hall element; a switch circuit configured to switch a direction of a drive current supplied to the Hall element between a first direction and a second direction; a magnetic field detection circuit configured to execute a detection operation for detecting a target magnetic field acting on the Hall element, based on a first difference between a Hall voltage generated in the Hall element when the drive current is supplied to the Hall element in the first direction and a Hall voltage generated in the Hall element when the drive current is supplied to the Hall element in the second direction; and a test magnetic field generation circuit configured to generate a test magnetic field different from the target magnetic field in a test operation.

Abstract: A current sensor system, includes: a plurality of conductors that are integrated into a substrate, each of the plurality of conductors having a respective first through-hole formed therein and a plurality of current sensors, each of the plurality of current sensors being disposed on the substrate. Each of the plurality of current sensors is disposed above or below the respective first through-hole of a different one of the plurality of conductors, and the substrate includes a plurality of conductive traces, each coupled to at least one of the plurality of current sensors.

Abstract: Systems and methods for spin-based detection of electromagnetic radiation at terahertz and sub-terahertz frequencies is provided. The detector can include a heterostructure, a magnetic field generator, and an electrical circuit. The heterostructure can include a first layer formed of an antiferromagnetic material (AFM) in contact with a second layer of a heavy metal (HM) or a topological insulator. The magnetic field generator can generate a magnetic field oriented approximately parallel to an easy axis of the first layer and approximately parallel to a propagation direction of electromagnetic radiation. The circuit can be in electrical communication with the second layer. The first layer can inject a spin current into the second layer in response to receipt of electromagnetic radiation having a sub-terahertz or terahertz frequency. The second layer can convert the injected spin current into a potential difference. The circuit can be configured to output a signal corresponding to the potential difference.

Abstract: A magnetic field sensor system comprising a first magnetic field sensor, one or more second magnetic field sensors and an amplifier and all magnetic field sensors are connected in series so that the respective output signals can be added up to a common input signal of the amplifier.

Abstract: Methods and apparatuses are provided, in which a magnetic field is measured using a coil in a first operating mode and a magnetic field is generated using the coil in a second operating mode in order to test a further magnetic field sensor.

Abstract: Systems and methods are provided for determining a position of a magnet. The systems and methods utilize a first sensor located at a first sensor position and arranged to measure at least two components of a magnetic field produced by the magnet, a second sensor located at a second sensor position and arranged to measure at least two components of the magnetic field produced by the magnet, and processing circuitry operatively connected to the first and second sensors to receive signals derived from signals outputted by the first and second sensors. A field angle is calculated from a first differential field of a first field dimension and a second differential field of a second field dimension orthogonal to the first field dimension. The first and second differential fields are calculated based on signals outputted by the first and second sensors.

Abstract: A current sensor includes a conductor, and first and second magnetic sensing elements. The first magnetic sensing element is positioned such that the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the first conductor portion is opposite in polarity to the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the third conductor portion. The second magnetic sensing element is positioned such that the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the second conductor portion is opposite in polarity to the magnetic field component in the second direction of the magnetic field generated by the measurement target current flowing through the third conductor portion.

Abstract: The semiconductor device includes a magnetic switch provided to a semiconductor substrate. The magnetic switch includes: a horizontal Hall element including first electrodes and second electrodes arranged at positions perpendicular to the first electrodes; a switch circuit configured to select a drive current direction of the Hall element from four directions; an SH comparator configured to alternately perform a first operation for sampling a signal transmitted from the Hall element and a second operation for sending a signal which is based on a result of comparing a value of the sampled signal and a reference value; a latch circuit configured to hold this sent signal and send the held signal as a latch output signal; and a control circuit configured to select the drive current direction in each of a period for the first operation and a period for the second operation based on the latch output signal.

Abstract: An electronic circuit can have a first plurality of vertical Hall elements and a second plurality of vertical Hall elements all disposed on a substrate having a plurality of crystal unit cells, wherein the first plurality of vertical Hall elements have longitudinal axes disposed within five degrees of parallel to an edge of the crystal unit cells, and wherein the second plurality of vertical Hall elements have longitudinal axes disposed between eighty-five and ninety-five degrees relative to the longitudinal axes of the first plurality of vertical Hall elements.

Abstract: A sensor cross-talk compensation system includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a vertical Hall sensor element disposed in the semiconductor substrate, the vertical Hall sensor element is configured to generate a sensor signal in response to a magnetic field impinging thereon; and an asymmetry detector configured to detect an asymmetric characteristic of the vertical Hall sensor element. The asymmetry detector includes a detector main region that vertically extends into the semiconductor substrate from the first main surface towards the second main surface and is of a conductivity type having a first doping concentration; and at least three detector contacts disposed in the detector main region at the first main surface, the at least three detector contacts are ohmic contacts of the conductivity type having a second doping concentration that is higher than the first doping concentration.

Abstract: A semiconductor device includes a vertical Hall element provided in a first region of a semiconductor substrate, and having the first to the third electrodes arranged side by side in order along a first straight line; a circuit provided in a second region of the semiconductor substrate different from the first region, and having a heat source; and a second straight line intersecting orthogonally a current path for a Hall element drive current which flows between the first electrode and the third electrode. The second line passes a center of the vertical Hall element, and a center point of a region which reaches the highest temperature in the circuit during an operation of the vertical Hall element lies on the second straight line.

Abstract: A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Abstract: A method for detecting an error in a bridge sensor which is adapted for measuring a physical parameter. The method comprises biasing a first contact pair of the bridge sensor at least two times in a first direction and at least one time in a second direction opposite to the first direction; while biasing the first contact pair, measuring an output signal on a different contact pair of the bridge sensor, thus obtaining at least three output measurements which are representative for the physical parameter and which are separated by time intervals; combining the output measurements to obtain an output value which is indicative for an error in the bridge sensor, wherein the output measurements which are combined are only those output measurements which are measured when biasing the first contact pair.

Abstract: A power control circuit comprising a power supply and a load, the load being synthesized from an impedance synthesizer comprising two-terminal impedance elements connected in series and grouped in impedance modules. The impedance elements in each impedance module are of equal value, while those between the modules bear ratios uniquely defined according to the numbers of impedance elements in the impedance modules. A number of switches associated with said impedance elements short out a selected number of the impedance elements under the control of a first analog signal which may be preprocessed by an analytic function. The analog signal is converted to digital signals by an analog-to-digital converter, then level shifted to control the switches associated with the impedance elements, whereby the amount of power delivered to the load is controllable by the first analog signal.

Abstract: A surgical instrument is disclosed. The instrument includes a handle portion, a body portion extending distally from the handle portion and defining a first longitudinal axis and an articulating tool assembly defining a second longitudinal axis and having a proximal end. The articulating tool assembly is disposed at a distal end of the body portion and is movable from a first position in which the second longitudinal axis is substantially aligned with the first longitudinal axis to at least a second position in which the second longitudinal axis is disposed at an angle with respect to the first longitudinal axis. The instrument also includes an articulation mechanism configured to articulate the articulating tool assembly, the articulation mechanism including an articulation sensor assembly configured to transmit a sensor signal to a microcontroller which is configured to determine an articulation angle of the articulation assembly.

Abstract: A Hall sensor has a Hall sensor element, which has multiple connection points spaced apart from one another. A supply source serves for feeding an exciter current into the Hall sensor element and is connected to a first and a second connection point of the Hall sensor element. The Hall sensor has a first and a second comparison device. The first comparison device has a first input connected to a third connection point of the Hall sensor element, a second input connected to a reference signal generator for an upper reference value signal, and an output for a first comparison signal. The second comparison device has a third input connected to the third connection point, a fourth input connected to a reference signal generator for a lower reference value signal, and an output for a second comparison signal. The outputs are connected to an evaluation device for generating an error signal as a function of the first and second comparison signal.

Abstract: An integrated Hall sensor device for measuring a magnetic field is provided. The integrated Hall sensor device includes: a semiconductor chip; a first Hall sensor for generating a first magnetic field measurement signal dependent on a first component; a second Hall sensor for generating a second magnetic field measurement signal dependent on a second component of the magnetic field; a first stress sensor for generating a shear stress measurement signal dependent on mechanical stresses in the semiconductor chip; and an evaluation device for determining one or more properties of the magnetic field depending on the first magnetic field measurement signal, the second magnetic field measurement signal. and the first shear stress measurement signal.

Abstract: Methods and apparatus for an orientation insensitive speed sensor. Magnetic field sensing elements can be located on a circle, for example, to generate first and second channel signals which can be combined to generate an output signal. The location of the magnetic field sensing elements reduces the effects of stray fields. Embodiments can include true power own state processing to determine target position during start up.

Abstract: An electrical converter assembly includes a sensing device coupled to one or more wires of a towing vehicle. The sensing device is configured to detect the current flow in the one or more wires and generate a signal in response to the current flow. The converter assembly further includes an electrical component in communication with the sensing device. The electrical component may generate a signal to a towed vehicle in response to the current flow detected by the sensing device. The sensing device may be a non-invasive sensing device. The non-invasive sensing device may detect current flow in the one or more wires of the towing vehicle without direct contact with the conducting element of the wires.

Abstract: A semiconductor device includes first and second Hall-effect sensors. Each sensor has first and third opposite terminals and second and fourth opposite terminals. A control circuit is configured to direct a current through the first and second sensors and to measure a corresponding Hall voltage of the first and second sensors. Directing includes applying a first source voltage in a first direction between the first and third terminals of the first sensor and applying a second source voltage in a second direction between the first and third terminals of the second sensor. A third source voltage is applied in a third direction between the second and fourth terminals of the first sensor, and a fourth source voltage is applied in a fourth direction between the second and fourth terminals of the second sensor. The third direction is rotated clockwise from the first direction and the fourth direction rotated counter-clockwise from the second direction.

Abstract: Methods and apparatus for a magnetic field sensor having dynamic offset compensation that determines offset voltages for a number of phases each having a bias current across a magnetic field sensing element in a different direction. Pairs of the determined offset voltages for the phases are combined and one of the combined pairs of offset voltages is selected based on a criteria, such as lowest voltage level.

Abstract: A method for sensing travel by a travel-sensing arrangement for a brake system, wherein the travel-sensing arrangement has a first magnetic angle sensor, and the method includes determining a first field strength in a first direction and determining a second field strength in a second direction by the first angle sensor, wherein the travel-sensing arrangement has a second magnetic angle sensor which is arranged at a predetermined distance from the first angle sensor, and the method further includes determining a first field strength in a first direction and determining a second field strength in a second direction by the second angle sensor. A travel-sensing arrangement, to a brake system having a travel-sensing arrangement, to a motor-vehicle and to a use of the travel-sensing arrangement and the method in a brake system.

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

Abstract: In a current detection apparatus, one or more first plate portions, one or more second plate portions, and one or more third plate portions of one or more magnetic shields are opposed to side surfaces of the one or more protrusions. The one or more protrusions, the one or more magnetic field detection elements, and one or more conductive members are respectively surrounded by the one or more magnetic shields, respectively. Consequently, the current detection apparatus is downsized and has high current detection accuracy.

Abstract: Provided is a magnetic sensor circuit in which increase of a delay time period is suppressed to be small without reducing a noise suppressing effect, in a case where there are multiple magnetic field detection axes. A magnetic sensor circuit is configured to subject detection signals obtained from multiple magnetic-field detection axes to time division processing, and includes a magnetic detector including at least two magnetic sensors, a switching circuit selecting a magnetic sensor represented by a selection signal to transmit the detection signal, a comparator, a control circuit, and output terminals. The control circuit supplies the selection signal to the switching circuit, and determines that the magnetic field is detected in a case where the number of times that a signal level of the signal supplied from the switching circuit exceeds a reference level reaches the number of set times that is set to a plurality of times.

Abstract: A circuit for biasing and reading out a bridge sensor structure comprises at least two pairs of connection terminals. The circuit comprises an excitation signal generator for generating an excitation signal for biasing and/or exciting the bridge, in which the excitation signal is provided as a non-constant periodic continuous function of time, and a detection circuit for obtaining the sensor signal from the bridge sensor structure by electrically connecting the detection circuit to any pair of connection terminals while applying the excitation signal to another pair. The circuit comprises a switch unit for switching the electrical excitation signal and for switching the detection circuit. A controller controls the switch unit to switch the first pair from being connected to the excitation signal generator at a time when the generated excitation signal is in a predetermined signal range where the excitation signal value is substantially equal to zero.

Abstract: Transistor devices are provided. In some example implementations, a magnetic field sensor chip is fitted on a load electrode of a transistor chip. In other example implementations, two magnetic field sensors are arranged on a load electrode of a transistor chip in such a way that they measure different effective magnetic fields in the event of current flow through the transistor chip.

Abstract: A Hall probe comprising a Hall effect sensing element. The probe is capable of precisely measuring the strength of a magnetic field in high-voltage and vacuum environments.

Abstract: A vertical Hall effect sensor having three Hall effect regions interconnected in a ring can be operated in a spinning scheme. Each Hall effect region has three contacts: the first Hall effect region includes first, second, and third contacts; the second Hall effect region has fourth, fifth, and sixth contacts, and the third Hall effect region has seventh, eighth, and ninth contacts. Interconnections between the Hall effect regions are provided such that a first terminal is connected to a third contact, a second interconnection is arranged between the second and fourth contacts, a third terminal is connected to the sixth contact, a fourth interconnection is arranged between the fifth and seventh contacts, a fifth terminal is connected to the ninth contact, and a sixth interconnection is arranged between the first and eighth contacts.

Abstract: The present disclosure relates to 3-dimensional Hall sensor devices comprising a Hall sensor element having a Hall effect region implemented in a 3-dimensional shell and comprising at least three terminals. Each terminal is connected to at least one electrical contact of the Hall effect region and each electrical contact is disposed at a different region of the 3-dimensional shell. The present disclosure further discloses spinning current/voltage schemes for offset cancellation in such 3-dimensional Hall sensor devices.

Abstract: A current sensor includes a bus bar, a magnetic core, and a casing. The bus bar includes a plate-shaped portion. The magnetic core surrounds the plate-shaped portion. The casing houses the bus bar and magnetic core. A thickness direction of the magnetic core is along a longitudinal direction of the plate-shaped portion. The casing includes lower and upper casings. The lower casing includes first and second press-fit portions. The first press-fit portion includes a groove portion into which the plate-shaped portion is press-fitted. In a state where the magnetic core is inserted downward into the second press-fit portion, both-side portions of the magnetic core in a width direction are press-fitted and held by the second press-fit portion. The upper casing includes a pressing portion that presses the bus bar and magnetic core downward. The groove portion is recessed downward, and is along a thickness direction of the magnetic core.

Abstract: A sensor circuit comprises a sensor adapted to sense a physical quantity and to produce a sensor output signal. A sensor-offset correction block is arranged to receive a signal indicative of a supply voltage applied to the sensor circuit and to generate a compensation signal based on the signal indicative of the supply voltage and on a quantity indicative of a state of the sensor circuit. A combiner is adapted to combine the sensor output signal with the compensation signal, thereby obtaining a compensated signal.

Abstract: A magnetic angle sensor includes a semiconductor chip that includes: a pair of vertical Hall sensor elements configured to generate vertical Hall sensor signals in response to a magnetic field impinging thereon; a first pair of lateral Hall sensor elements configured to generate first lateral Hall sensor signals in response to the magnetic field impinging thereon; a second pair of lateral Hall sensor elements configured to generate second lateral Hall sensor signals in response to the magnetic field impinging thereon; and a sensor circuit configured to: determine a first angle value corresponding to an orientation of the magnetic field based on the vertical Hall sensor signals, determine a second angle value corresponding to the orientation of the magnetic field based on the first and the second lateral Hall sensor signals, and determine whether the first and the second angle values are within an acceptable tolerance range of each other.

Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.

Abstract: An apparatus for magnetic field detection includes a power supply and a plurality of magnetic field sensitive devices including at least first, second, and third magnetic field sensitive devices. The first to third magnetic field sensitive devices are coupled to each other and to the power supply such that a first supply current path runs through the first magnetic field sensitive device and not through the second magnetic field sensitive device, a second supply current path runs through the second magnetic field sensitive device and not through the first magnetic field sensitive device, and the first and second current paths run through the third magnetic field sensitive device. An internal resistance of the third magnetic field sensitive device is smaller than both an internal resistance of the first magnetic field sensitive device and an internal resistance of the second magnetic field sensitive device.

Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.

Abstract: A torque detection device includes a first magnetic circuit part, a second magnetic circuit part, a circuit board module, and a sensor housing. The first magnetic circuit part is disposed on one side of a multipolar magnet in an axial direction. The second magnetic circuit part is disposed on the other side of the multipolar magnet in the axial direction. The circuit board module includes plural magnetic sensors mounted thereon and facing the magnetic circuit on one end side in a width direction being included in the plane and intersecting the arrangement direction. The sensor housing is coupled to one end side in the arrangement direction of the circuit board module so as to support the circuit board module on the one end side in the arrangement direction of the circuit board module.

Abstract: A computer system analyzes data from smart meters. The computer system can, for example, analyze the data from a smart meter to determine if the smart meter is connected to a different distribution transformer, if the smart meter is at a customer site where power theft is occurring, if the smart meter is located at a customer site having a solar photovoltaic system, if the smart meter is located at a customer site having an electric vehicle, or if the smart meter is located at a grow house.

Abstract: A Hall sensor apparatus has a Hall effect field with at least five contacts which are wired to at least five connections, wherein none of the at least five contacts is wired to more than one of the at least five connections, a supply circuit and a measurement circuit. In a first operational phase, a supply current enters the Hall effect field or leaves the Hall effect field through one single connection of the at least five connections, and two differential signals are measured at different common-mode potentials in each case between two of the at least five connections. The measurement circuit is designed to combine the measured differential signals into a total signal.

Abstract: Determining a distribution of carrier mobilities in a material of an electronic device includes acquiring a magnetic field-dependent Hall measurement of the material exposed to a finite number of magnetic fields, wherein the magnetic field-dependent Hall measurement includes an electrical signal generated in response to the finite number of magnetic fields being applied perpendicular to a current through the material; and processing the magnetic field-dependent Hall measurement, using a computer, to determine a continuous, least-biased distribution of carrier mobilities that match the magnetic field-dependent Hall measurement by determining, using the magnetic field-dependent Hall measurement, a probability density function of a conductance of the material; approximating the mobility spectrum to a maximum-entropy spectrum of the material; and determining an energy dependence of carrier scattering in the material based on the maximum-entropy spectrum.

Abstract: Magnetic field sensors and associated techniques use a Hall effect element in a current spinning arrangement in combination with a rippled reduction feedback network configured to reduce undesirable spectral components generated by the current spinning and other circuit elements.

Abstract: A sensor system that simultaneously detects the positions of multiple movable carriages along a motion path. The sensor system includes a plurality of sensors arranged at least along a subsection of the motion path, wherein each sensor is designed for a contactless detection of a measuring element provided on each movable carriage. The sensor system also includes a processing device, which is connected electrically with the sensors and which is designed for a synchronous detection of sensor signals of the sensors.

Abstract: The semiconductor device includes a first vertical Hall element provided in a first region of a semiconductor substrate, and including a first plurality of electrodes arranged at predetermined intervals on a first straight line, a second vertical Hall element provided in a second region of the semiconductor substrate different from the first region, and including a second plurality of electrodes of the same number as that of the first plurality of electrodes, the second plurality of electrodes being arranged at the predetermined intervals on a second straight line parallel to the first straight line, a first drive power source configured to drive the first vertical Hall element, and a second drive power source configured to drive the second vertical Hall element and provided separately from the first drive power source.

Abstract: A method for operating a Hall sensor device that includes a Hall effect region and a plurality of electrical contact regions configured to provide electrical signals to and from the Hall effect region using a plurality of control terminals is provided. Each electrical contact region is formed in a respective well that adjoins the Hall effect region, and each control terminal is configured to control a conductance in an associated well. The method includes selectively applying control signals to a first subset of the plurality of control terminals to form channels conducting majority carriers of a first conductivity type in the associated wells during a first operating phase; and selectively applying control signals to a different second subset of the plurality of control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a second operating phase.

Abstract: A current detection method for a current detection device including magnetism detection elements that detect magnetic flux density and output a voltage signal corresponding to the magnetic flux density is provided. The method includes acquiring measured value data that is obtained as a result of providing magnetic flux density in a detectable range of the magnetism detection elements that indicates the relationship between the magnetic flux density and an output voltage signal from the current detection device. Next, computational processing is performed so as to fit the acquired measured value data to a formula that includes plural factors and indicates the output voltage of the magnetism detection elements, thereby calculating the plural factors, and correcting the output voltage signal from the magnetism detection elements in accordance with the calculated factors so as to be approximately linear with respect to the magnetic flux density.

Abstract: The present disclosure describes a semiconductor circuit arrangement comprising a Hall sensor circuit integrated into a semiconductor substrate and configured to conduct a Hall supply current between a first terminal and a second terminal of a Hall effect region at an angle of 45° with respect to a normal to a primary flat plane of the semiconductor substrate laterally through the Hall effect region, wherein the Hall supply current has a first dependence on a mechanical stress of the semiconductor substrate. A resistance arrangement integrated into the semiconductor substrate, the resistance arrangement being different than the Hall effect region, is configured to conduct a current between a first terminal and a second terminal of the resistance arrangement, wherein the current through the resistance arrangement has a second dependence on the mechanical stress of the semiconductor substrate.

Abstract: Systems and methods described herein provide a current sensor based on magnetic field detection having multiple sensor arrangements with multiple, different sensitivity ranges. The outputs of the multiple sensor arrangements can be combined to generate a single output signal. The current sensor can include two or more sensor arrangements, each having one or more magnetic field sensing elements, and configured to sense a magnetic field in different first measurement ranges corresponding to different ranges of currents through the conductor and further configured to generate different magnetic field signals indicative of the sensed magnetic field in the respective measurement range. The current sensor can include a circuit configured to generate an output signal indicative of a combination of the different magnetic field signals that corresponds to the current through the conductor.

Abstract: A RF field sensor in which a magnetostrictive film is deposited on one or more electrodes of one or more quartz resonator(s) in which an electric field of the RF field is detected along one axis of the RF field sensor and a magnetic field of the RF field is detected along an orthogonal axis of the RF field sensor simultaneously.

Abstract: Methods and apparatus for controlling a three-phase motor and providing sinusoidal phase currents during startup. In embodiments, differential outputs from a magnetic field sensing element are used to generate a polarity signal used to provide a motor direction drive signal. An amplitude signal derived from the magnetic field sensing element and a measured motor current are used to generate a current amplitude signal. A PWM module generates signals for driving the motor with sinusoidal phase currents from the current amplitude signal and the motor direction drive signal.

Abstract: A magnetic field sensor includes a first magnetic field sensing element configured to generate a first magnetic field signal indicative of a magnetic field associated with a target, a second magnetic field sensing element spaced from the first magnetic field sensing element and configured to generate a second magnetic field signal indicative of the magnetic field associated with the target. A switching module coupled to receive the first and second magnetic field signals is configured to generate a combined signal having alternating portions associated with the first and second magnetic field signals.