Abstract: In one aspect, a magnetic field sensor includes first and second magnetic field sensing elements having respective first and second maximum response axes. The first and second maximum response axes point along respective first and second different coordinate axes. In response to a magnetic field, the first and second magnetic field sensing elements are operable to generate first and second magnetic field signals. The magnetic field sensor includes an electronic circuit coupled to receive the first and the second magnetic field signals. The electronic circuit is configured to determine a magnitude of a vector sum of the first and the second magnetic field signals and provide one or more signals in response to the magnitude of the vector sum determined.

Abstract: A Hall element is integrated on a single substrate and is capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes a P-type semiconductor substrate layer formed of P-type silicon, a vertical magnetic field detection N-type doped region formed on the P-type semiconductor substrate layer, and eight horizontal magnetic field detection N-type doped regions formed so as to surround the vertical magnetic field detection N-type doped region.

Abstract: Magnetic field sensors and associated techniques use a Hall effect element in a chopping arrangement in combination with a feedback path configured to reduce undesirable spectral components generated by the chopping.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A needle magnetizing arrangement (1) comprising a controller (4) adapted to generate a first magnetic field (F) for magnetizing a needle (2), and a magnetic field sensor (5) adapted to generate a signal based on a second magnetic field (FR) of the needle (2).

Abstract: A current sensing apparatus is disclosed that provides improved immunity to external magnetic fields, enhanced resolution, and a wide sensing range. The current sensing apparatus includes a conductor having a plurality of current path regions formed therein, which are separated by a pair of slots formed through the conductor. A pair of magnetic field sensors is positioned relative to the pair of slots to sense a magnetic field produced by a current flow through one of the current path regions.

Abstract: A magnetic sensor has a pair of Hall elements formed in spaced-apart relationship on a front surface of a semiconductor substrate. A die pad is bonded to a back surface of the semiconductor substrate and overlaps the Hall elements. The die pad has formed therein a magnetic converging plate holder having a recessed portion, and a magnetic converging plate having the same shape and size as the recessed portion is fitted in the recessed portion of the magnetic converging plate holder.

Abstract: A Hall effect sensor with multiple Hall effect elements, each of the Hall effect elements having a first contact terminal, a second contact terminal, and a third contact terminal arranged along a straight line. The multiple Hall effect elements are electrically connected in series in a closed circuit. The second contact terminals of the Hall effect elements are supply voltage connections or Hall voltage pickoffs, and the applicable second contact terminal of the Hall effect element is a center contact of the Hall effect element. The Hall effect elements form two pairs, and the Hall effect elements of one pair each measure the same component of a magnetic field and an operating current is impressed on the series circuit in the two Hall effect elements of this one pair, and a supply voltage is applied to the Hall effect elements of the other pair.

Abstract: A single chip push-pull bridge-type magnetic field sensor. The sensor comprises a substrate, bonding pads, magnetoresistance sensing elements, and flux concentrators, wherein the magnetoresistance sensing elements are positioned in the clearances of the adjacent flux concentrators, and the directions of the pinning layers of the magnetoresistance sensing elements are identical. The flux concentrators are divided into a push arm type and a pull arm type, the included angle between one type and an X-axis forward direction is positive, and the included angle between the other type and the X-axis forward direction is negative. The working principle of the sensor is that the magnetic field along the X-axis direction in the clearances of the flux concentrators are oppositely oriented. The sensor has the advantages of small size, low cost, simplicity in manufacturing, high sensitivity, good linearity, high sensitivity, wide working dynamic range, and the like.

Abstract: A vertical Hall effect sensor having three Hall effect regions interconnected in a ring can be operated in a spinning scheme. Each Hall effect region has three contacts: the first Hall effect region includes first, second, and third contacts; the second Hall effect region has fourth, fifth, and sixth contacts, and the third Hall effect region has seventh, eighth, and ninth contacts. Interconnections between the Hall effect regions are provided such that a first terminal is connected to a third contact, a second interconnection is arranged between the second and fourth contacts, a third terminal is connected to the sixth contact, a fourth interconnection is arranged between the fifth and seventh contacts, a fifth terminal is connected to the ninth contact, and a sixth interconnection is arranged between the first and eighth contacts.

Abstract: Embodiments relate to stacks of Hall effect structures, in which the potential at the contacts of each Hall effect structure throughout a stack of Hall effect structures changes monotonically. An output associated with the Hall effect structure in each layer of the stack can be compared against the output of a counterpart Hall effect structure in another stack to ascertain the strength of an incident magnetic field.

Abstract: A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.

Abstract: Vibration transducers, sensors including the vibration transducers, and methods for manufacturing the same. The vibration transducer may include a magnet. The vibration transducer may include a bobbin disposed about the magnet. The vibration transducer may include a first coil disposed about the bobbin. The vibration transducer may include a controllable damping coil disposed about the bobbin. The first coil is movable relative to the magnet. The magnet is polarized with respect to the axis of the vibration transducer.

Abstract: An electronic device is disclosed as a part of a magnetic field sensor or a mechanical stress sensor. The electronic device includes a Hall effect region, a first contact (temporarily functioning as a first supply contact), a second contact (second supply contact), and a third contact (temporarily functioning as a first sense contact) that are arranged in or on a surface of the Hall effect region. The first contact and the third contact are arranged in a substantially symmetrical manner to each other with respect to the second contact. An electrical current distribution within the Hall effect region is influenced by a physical quantity (e.g. magnetic field strength or mechanical stress) to be measured. A sense signal tapped at the third contact is a function of the current distribution, the sense signal thus being indicative of the physical quantity. A corresponding sensing method using the electronic device is also disclosed.

Abstract: An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor.

Abstract: Devices and methods for sensing current are described herein. One device (100) includes a base member (102) having a first leg (104, 106) and a second leg (104, 106), the legs (104, 106) defining an angle (108) therebetween, a first magnetic current sensor (110, 112) coupled to the base member (102) and positioned at a first location in a plane bisecting the angle (108), and a second magnetic current sensor (110, 112) coupled to the base member (102) and positioned at a second location in the plane bisecting the angle (108).

Abstract: A magnetic field sensor and a method include a modulator coupled in a feedback arrangement and operable to modulate a calibration feedback signal with a modulator clock signal having a selected frequency and a selected relative phase operable to remove a gain error in the magnetic field sensor and in the method.

Abstract: A magnetic sensor of the present invention includes a Hall-effect sensor configured to detect magnetism and an IC being configured to drive the Hall-effect sensor and perform signal processing therefor and having two or more metal interconnection layers. The Hall-effect sensor and the IC are electrically connected to each other via wire interconnections and sealed in one package. Metal interconnections on the IC to input output voltage of the Hall-effect sensor to a signal processing unit of the IC have a grade-separation junction portion in order to suppress an induced electromotive force which a change in the magnetic flux density externally applied generates at output terminals of the Hall-effect sensor, the wire interconnections connected to output electrode pads of the Hall-effect sensor, and the metal interconnections to input the output voltage of the Hall-effect sensor to the signal processing unit of the IC.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A novelty toy, apparel, or jewelry, device for fanciful detection of ghosts, or other paranormal phenomena, through exploitation of Hall Effect, or of thermochromic material.

Abstract: A Hall electromotive force signal detection circuit combines offset cancellation means by a spinning current method of a Hall element with a continuous-time signal processing circuit. A Hall element includes first to fourth terminals, and generates a Hall electromotive force signal voltage Vhall1. Another Hall element generates another Hall electromotive force signal voltage Vhall2. A first switching circuit selects a terminal position for applying a drive current from the four terminals of the Hall element. A second switching circuit selects a terminal position for applying a drive current from the four terminals of the another Hall element, which is different from the terminal position selected by the first switching circuit. A chopper clock generation circuit supplies a chopper clock signal ?1, ?2 having two different phases to the switching circuit, and also supplies the chopper clock signal ?1, ?2 to the first and second switching circuits.

Abstract: Embodiments relate to Hall-controlled switch devices. In an embodiment, a Hall switch and a load switch are integrated in a single integrated circuit device. Embodiments can provide load switching and optional simultaneous logic signaling, for example to update a microcontroller or electronic control unit (ECU), while reducing space and complexity and thereby cost.

Abstract: The invention relates to a Hall effect sensor for recording the direction of a magnetic field, comprising a plurality of Hall effect sensor elements (10a, 10b) arranged in pairs, wherein each pair comprises a first Hall effect sensor element (10a) and a second Hall effect sensor element (10b) which are arranged parallel to one another. The Hall effect sensor has a first switch (34) for disconnecting the first Hall effect sensor element (10a) from a power supply (24).

Abstract: A device, method, and system are disclosed for establishing wireless communications between communications devices comprising respective magnets and magnetic sensors each located on first and second communications device and aligned such that a magnet on the first communications device is aligned with a magnetic sensor on the second communications device and a magnet on the second communications device is aligned with a magnetic sensor on the first communications device. In response, a Near Field Communications (NFC) circuit contained in each of the first and second communications devices is activated and data exchanged between the first and second communications devices using a NFC communications protocol.

Abstract: Integrated circuit Hall sensor system comprising a plurality of elementary blocks (EB), each elementary block including a Hall cell (4), a differential pair (8) of an input stage of a Differential Difference Amplifier (DDA), and terminals (12a, 12b), wherein the terminals (12a, 12b) are placed laterally on opposing outer sides of each elementary block parallel to a Y axis and the plurality of elementary blocks are arranged in a juxtaposed manner to form at least one row (6a, 6b) extending along an X axis orthogonal to the Y axis and interconnected by the terminals.

Abstract: A magnetic field sensor with a plurality of magnetic field sensing elements is presented. The magnetic field sensor includes a sequences switches circuit to sequentially select from among the plurality of magnetic field signals. The magnetic field sensor further includes a memory device to store a plurality of potentiometer control values. Also included is a variable potentiometer to attenuate an offset of each one of the plurality of magnetic field signals by using a respective plurality of offset attenuation factors responsive to one or more of the plurality of potentiometer control values. A corresponding method is also described.

Abstract: A vertical Hall effect device includes at least four Hall effect regions which are partly decoupled from each other, and each of the at least four Hall effect regions has first and second opposite faces. Each of the Hall effect regions has on the first face a first contact and a second contact that are placed symmetrically with respect to a plane of symmetry at the respective Hall effect region, wherein the plane of symmetry is orientated perpendicular to a straight line between the first contact and the second contact of the respective Hall effect region. Each of the Hall effect regions has at least one contact area placed in an area around the respective plane of symmetry, wherein low ohmic connection means include at least one low ohmic connecting path connecting the contact areas of the Hall effect regions.

Abstract: One embodiment of the present invention relates to a vertical Hall-effect device. The device includes at least two supply terminals arranged to supply electrical energy to the first Hall-effect region; and at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region. The first Hall signal is indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region. One or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact.

Abstract: An electronic device includes a number of n Hall effect regions with n>1, wherein the n Hall effect regions are isolated from each other. The electronic device also includes at least eight contacts in or on surfaces of the n Hall effect regions, wherein the contacts include: a first and a second contact of each Hall effect region. A first contact of the (k+1)-th Hall effect region is connected to the second contact of the k-th Hall effect region for k=1 to n?1, and the first contact of the first Hall effect region is connected to the second contact of the n-th Hall effect region. The at least eight contacts include at least two supply contacts and at least two sense contacts. Each Hall effect region includes at most one of the at least two supply contacts and at most one of the at least two sense contacts.

Abstract: Embodiments relate to reducing offset error in sensor systems. In embodiments, the sensitivity and offset of a sensor depend differently on some parameter, e.g. voltage, such that operating the sensor at two different values of the parameter can cancel the offset error. Embodiments can have applicability to stress sensors, Hall plates, vertical Hall devices, magnetoresistive sensors and others. The offset error can be reduced using a correction factor based on a first offset error of the sensor system when operated in a first phase and a second offset error of the sensor system when operated in second first phase. The sensor system can generate an output signal based on first and second output signals generated when operating in the first and second phases, respectively.

Abstract: Embodiments relate to magnetic field current sensors having sensor elements for sensing at least two magnetic field components, for example Bx and By. The current in a conductor is estimated by Bx and Bx/By, wherein Bx is the primary measurement and Bx/By is a corrective term used to account for position tolerances between the sensor and the conductor. In other embodiments, the corrective term can be dBx/By, where dBx is a difference in between components sensed at different sensor elements. The particular field components can vary in embodiments; for example, the current can be estimated by By and By/Bx, or dBy/Bx or some other arrangement.

Abstract: Provided is a magnetic sensor device, which is configured to connect each terminal of a Hall element to another end of a variable resistor having one end connected to GND by switching of four switches. Thus, a detection voltage level for a magnetic field intensity can be arbitrarily set with a small-scale circuit. The detection voltage level is determined only by the resistance ratio, and hence the influence of fluctuations in power supply voltage and manufacturing fluctuations can be suppressed. This configuration can simplify signal processing and achieve higher-speed signal processing.

Abstract: The Hall sensor semiconductor component comprises an arrangement of at least two Hall sensors (1, 2) with signal connections (11, 13, 21, 23) and supply connections (12, 14, 22, 24), and a switching network, which varies the positions of the supply connections in successive phases and connects the Hall sensors in series in each phase via the respective signal connections.

Abstract: A resistive element includes a resistive region in a semiconductor substrate, a first contact structure and a second contact structure. The semiconductor substrate includes a first main surface area. The resistive region extends in a lateral direction parallel to the main surface area and in a vertical direction perpendicular to the main surface area, and includes a first piezo-resistive coefficient for a current flow in the lateral direction and a second piezo-resistive coefficient for a current flow in the vertical direction. The first contact structure contacts a portion of a first face of the resistive region and the second contact structure contacts a portion of a second face of the resistive region. The resistive element generates a current flow distribution within the resistive region having a lateral component and a vertical component that results in a piezo-resistive coefficient of the resistive element.

Abstract: The present disclosure provides for techniques to improve the sensitivity of magnetic sensor systems. One embodiment of a magnetic sensor system includes a magnetic biasing body comprised of a hard magnetic material and including a recess therein. The recess corresponds to a magnetic flux guidance surface of the magnetic biasing body. The magnetic sensor system also includes a magnetic sensing element arranged in or proximate to the recess. A magnetic flux concentrator, which is made of a soft magnetic material, is disposed in the recess between the magnetic flux guidance surface and the magnetic sensing element. Other techniques are also described.

Abstract: A vertical Hall effect device is provided and includes a Hall effect layer having a first, second, third, and fourth Hall effect region, which are at least partly decoupled from each other. The Hall effect layer has first and second opposite faces and the vertical Hall effect device has a terminal composition comprising a first, second, third and fourth terminal. A low ohmic connecting composition at the first face connects the terminal composition with contacts of the Hall effect regions so that at each Hall effect region the terminal composition is connected to a same first number of at least two contacts being connected to the respective Hall effect region at the first face. The second and third terminals selectively output an electrical signal responsive to a magnetic field, and the first and fourth terminals selectively output the electrical signal responsive to the magnetic field.

Abstract: A vertical Hall device indicative of a magnetic field parallel to a surface of a substrate comprises first, second, third and fourth terminals. The vertical Hall device further comprises contacts to generate a Hall effect signal indicative of the magnetic field. At least one pair of Hall effect regions is provided which comprises a first Hall effect region and a second Hall effect region formed in the substrate. A first group of the contacts is arranged in or at a surface of the first Hall effect region, the first group comprising a first and second outmost contacts. A second group of contacts is arranged in or at a surface of the second Hall effect region, the second group comprising third and fourth outmost contacts. Each of the first, second, third and fourth terminals is connected to a same number of outmost contacts.

Abstract: A vertical Hall sensor includes first and second vertical Hall effect regions formed in a semiconductor substrate and of the same doping type, with first and second pluralities of contacts arranged at one side of the first or second vertical Hall effect regions, respectively. The second vertical Hall effect region is connected in series with the first vertical Hall effect region regarding a power supply to the first and second vertical Hall effect regions. The vertical Hall sensor further includes first and second layers adjacent to the first and second vertical Hall effect regions at a side other than a side of the first or second pluralities of contacts. The first and second layers have different doping properties than the first and second vertical Hall effect regions and insulate the first and second vertical Hall effect regions from a bulk of the semiconductor substrate by at least one reverse-biased p-n junction per vertical Hall effect region during an operation of the vertical Hall sensor.

Abstract: A vertical Hall device includes a Hall effect region formed in a substrate and a sequence of at least six contacts arranged in or at a surface of the Hall effect region between a first contact and a last contact. The vertical Hall device also includes a first contact interconnection connecting the first contact with a third to the last contact. A vertical Hall device further includes a second contact interconnection connecting a third contact with the last contact. Further embodiments made to a sensing method for sensing a magnetic field parallel to a surface of a substrate.

Abstract: Provided is a magnetic sensor device capable of performing signal processing at high speed with high accuracy. The magnetic sensor device includes: a plurality of Hall elements; a plurality of differential amplifiers to which the plurality of Hall elements are connected, respectively; a detection voltage setting circuit for outputting a reference voltage; and a comparator including: a plurality of differential input pairs connected to the plurality of differential amplifiers, respectively; and a differential input pair connected to the detection voltage setting circuit.

Abstract: One embodiment of the present invention relates to a method and apparatus for removing the effect of contact resistances for Hall effect device contacts. In one embodiment, the apparatus comprises a Hall effect device comprising a plurality of force and sense contact pairs. The force and sense contact pairs comprise a force contact and a separate and distinct sense contact. The force contact is configured to act as a supply terminal that receive an input signal while the sense contact is configured act as an output terminal to provide an output signal indicative of a measured magnetic field value. By utilizing separate contacts for inputting a signal (e.g., an applied current) and reading out a signal (e.g., an induced voltage) the non-linearities generated by contact resistances may be removed, thereby minimizing the zero point offset voltage of the measured magnetic field.

Abstract: Provided is a sensor device capable of removing the influence of each offset voltage of a sensor element, a differential amplifier, and an amplifier of the sensor device, to thereby detect a physical quantity with high precision and respond to high-speed operation.

Abstract: A vertical Hall Effect sensor is provided having a high degree of symmetry between its bias modes, can be adapted to exhibit a small pre-spinning systematic offset, and complies with the minimal spacing requirements allowed by the manufacturing technology (e.g., CMOS) between the inner contacts. These characteristics enable the vertical Hall Effect sensor to have optimal performance with regard to offset and sensitivity.

Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A circular vertical Hall (CVH) sensing element and an associated method provide a plurality of output signals from a respective plurality of vertical Hall elements in the CVH sensing element at the same time.

Abstract: A Hall plate excitation system provides reduced offset and temperature dependence. The Hall plate excitation system includes a current source, a switching network, and a controller. The current source is configured to provide an excitation current to a Hall plate. The switching network is configured to switchably connect the current source to each of a plurality of terminals of the Hall plate. The controller is configured to adjust the excitation current no more than once during each spinning cycle; and to sequentially switch the excitation current to each of the plurality of terminals of the Hall plate during each spinning cycle.

Abstract: A current sensor comprises a flat housing made of plastic having an underside and an upper side and electrical connections, a current conductor through which the current to be measured flows, and a semiconductor chip having two magnetic field sensors, wherein the component of the magnetic field detected by the two magnetic field sensors points in opposite directions at the locations of the two magnetic field sensors. The semiconductor chip is connected as flipchip to the electrical connections. The current conductor extends from one side wall to the opposite side wall of the housing, is embedded flat in the underside of the housing and is therefore exposed on the underside of the housing. The opposing surfaces of the semiconductor chip and the current conductor are separated by an electrical insulation layer.

Abstract: Embodiments relate to multi-terminal sensor devices and operating methods thereof that can reduce or eliminate offset error. In embodiments, sensor devices can comprise three or fewer terminals, and multiple such sensor devices can be combined. The sensor devices can comprise Hall sensor devices, such as vertical Hall devices, or other sensor devices in embodiments. Operating modes can be implemented for the multi-terminal sensor devices which offer improvements over conventional spinning current techniques, including reduced residual offset.

Abstract: Embodiments relate to systems and methods for reducing errors in sensor devices and systems. In embodiments, the sensor devices comprise magnetic field sensor devices, such as ordinary or vertical Hall sensor devices, and the error to be reduced is a residual offset error, though in other embodiments other sensor devices can be used and/or other types of errors can be targeted for reduction or elimination. In one embodiment, at least two such sensor devices not electrically coupled with one another are sequentially operated in a spinning current-type mode such that an individual output signal from each of the at least two sensor devices is obtained. A total output signal can then be calculated, such as by averaging or otherwise combining the individual output signals from each sensor device.

Abstract: Provided is a sensor device capable of removing the influence of each offset voltage of a sensor element, a differential amplifier, and an amplifier of the sensor device, to thereby detect a physical quantity with high precision.