Abstract: Systems and methods for on-wafer dynamic testing of electronic devices. The systems include a probe head assembly, a probe-side contacting structure, a chuck, and a chuck-side contacting structure. The probe head assembly includes a probe configured to electrically contact a first side of a device under test (DUT). The probe-side contacting structure includes a probe-side contacting region. The chuck includes an electrically conductive support surface configured to support a substrate that includes the DUT and to electrically contact a second side of the DUT. The probe head assembly and the chuck are configured to translate relative to one another to selectively establish electrical contact between the probe and the DUT. The chuck-side contacting structure includes a chuck-side contacting region that is in electrical communication with the electrically conductive support surface and opposed to the probe-side contacting structure. The methods may include methods of operating the system or systems.

Abstract: A probe loader device includes a carrier board, a three-dimensional stepped structure and a probe module having a plurality of probe pin layers separately stacked together in three-dimensional stepped structure. The three-dimensional stepped structure is connected to the carrier board. Each of the probe pin layers includes a plurality of cantilever probes. The cantilever probes respectively extend outwards from different steps of the three-dimensional stepped structure, and physical touch a plurality of electrical contacts of a DUT. A portion of each of the cantilever probes extending outwards from the three-dimensional stepped structure has a moment length, and the moment lengths of the cantilever probes of the different probe pin layers are the same.

Abstract: A test configuration for testing a leakage current of a device under test (DUT) of an integrated circuit is provided including a logarithmic transducer electrically connected to the DUT and a voltmeter electrically connected to the logarithmic transducer.

Abstract: A Kelvin inspection fixture is provided with contact probes, wherein the contact probe comprises an electrode side contact terminal in contact with a solder ball, and a land side contact terminal in contact with a land, and the contact probe comprises an electrode side contact terminal in contact with the solder ball, and a land side contact terminal in contact with a land. The contact probes are disposed so that an electrode side inclined face and an electrode side inclined face are held in an opposite relationship with respect to each other and so that a land side inclined face and a land side inclined face are held in a face to face relationship with respect to each other.

Abstract: A probe card, which is used to transmit power signals and test signals from a tester to a DUT, includes a pin base, a plurality of signal pins, a signal conducting circuit and at least one power conducting circuit. The signal pins are made of conductive materials, and each contacts the DUT with an end thereof; the signal conducting circuit has a first resistance, and electrically connects the tester and the other end of one of the signal pin to transmit the test signals to the DUT; the power conducting circuit has a second resistance which is much less than the first resistance, and electrically connects the tester and the other end of one of the signal pin which is not connected with the signal conducting circuit to transmit the power signals to the DUT.

Abstract: An embodiment of a method is proposed for producing cantilever probes for use in a test apparatus of integrated electronic circuits; the probes are configured to contact during the test corresponding terminals of the electronic circuits to be tested. An embodiment comprises forming probe bodies of electrically conductive materials. In an embodiment, the method further includes forming on a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Abstract: According to one embodiment, a stack includes first and second wiring structures and an inspection circuit. The inspection circuit includes a switching circuit having an input terminal, a drive terminal, and an output terminal electrically connected with a discharge mechanism. The inspection circuit is configured such that, in a state where a first electric connection is made in the first wiring structure and a second electric connection is made in the second wiring structure, at the time of applying charges to first and second electrodes, the charge applied to the second electrode flows to the drive terminal through the second wiring structure to bring the input terminal and the output terminal of the switching circuit into an electrically conducted state, and the charge applied to the first electrode flows to the discharge mechanism through the first wiring structure and the switching circuit.

Abstract: A monitoring method of a three-dimensional integrated circuit (3D IC) is provided, wherein the method includes: providing a plurality of TSVs, providing a plurality of inverters; connecting the inverters with the plurality of TSVs as a circuit loop; enabling the circuit loop to oscillate; measuring an output signal on an output end of one of the plurality of inverters; and determining the manufacturing state of the plurality of TSVs of the 3D IC based on the output signal and apparatus using the same.

Abstract: A probe module for testing an electronic device comprises at least two contacts, each contact including a first end portion extending in a first direction along a first line, a second end portion extending linearly in a second direction opposite from the first direction and along a second line, and a third curved portion extending between the first end portion and the second end portion. The first line is spaced apart from and in parallel with the second line, and the at least two contacts are spaced apart from each other in a direction perpendicular to the first line and the second line. Methods for making such a probe module are also taught.

Abstract: A method and circuit for implementing high current capability Kelvin connections and measuring the resistance of the contacts and connections to verify that the conducting path is capable of carrying the high current without damage or degraded performance. Included as well is the means and circuit for efficiently dividing a high current test stimulus current into 2 paths with low losses and voltage drops.

Abstract: Disclosed is a continuous broken sense lead detection system (“CBSLDS”) for use with a Kelvin-connected device under test (“DUT”), a power source, and detection system stimulus configured to provide a periodic stimulus voltage. The CBSLDS is configured to detect a discontinuity in a first sense lead, second sense lead, or both, that are in signal communication with the DUT. The CBSLDS includes a first transformer, second transformer, first DC-blocker, second DC-blocker, first detection module, and second detection module.

Abstract: Terminals of a device under test are connected to corresponding contact pads or leads by a series of electrically conductive contacts. Each terminal testing connects with both a “force” contact and a “sense” contact. In one embodiment, the sense contact partially or completely laterally surrounds the force contact, so that it need not have its own resiliency. The sense contact has a forked end with prongs that extend to opposite sides of the force contact. Alternatively, the sense contact surrounds the force contact and slides laterally to match a lateral translation component of a lateral cross-section of the force contact during longitudinal compression of the force contact. Alternatively, the sense contact includes rods that have ends on opposite sides of the force contact, and extend parallel.

Abstract: A device and method for monitoring the material health of a structure, providing a miniaturized MEMS Kelvin probe within a housing, wherein the Kelvin probe comprises a conductive plate formed of a stable metal and positioned substantially parallel to the structure; a piezoelectric vibrator for vibrating the conductive plate; and an electrical circuit connected to the conductive plate and the structure, wherein the conductive plate and the structure form a capacitor. The device is contained in one small, lightweight package that can be placed at one or more locations of interest. The sensor can be left in-place for continuous monitoring or for active testing at desired intervals, or be brought to the aircraft at desired intervals.

Abstract: A contact probe comprises conductively coupled plungers and a coil spring. The plungers have coupling means which enable them to be slidably and non-rotatably engaged. The spring is attached to the plungers in a manner that prevents rotation of the spring's ends. A desired magnitude of torsional bias is generated by twisting the spring a predetermined angle prior to attachment of the spring to the plungers. An additional torsional bias is generated by the tendency of the spring to twist when the spring is axially displaced. The resultant torsional bias rotatably biases the coupling means of the plungers against each other, generating contact forces for a direct conductive coupling between the plungers. The plungers are self-latching or are retentively attached to the spring using the torsional bias of the spring. Plungers with hermaphroditic coupling means can be fabricated from a sheet metal or a profiled stock by stamping or machining.

Abstract: A method to test and package dies so as to increase overall yield is provided. The method includes performing a wafer test on a first die and mounting the first die on a package substrate to form a partial package, if the wafer test of the first die is successful. The method further includes performing a system test on the partial package including the first die and stacking a second die on the first die if the system test on the partial package and the first die is successful.

Abstract: A method of inspecting an electrostatic chuck (ESC) is provided. The ESC has a dielectric support surface for a semiconductor wafer. The dielectric support surface is scanned with a Kelvin probe to obtain a surface potential map. The surface potential map is compared with a reference Kelvin probe surface potential map to determine if the ESC passes inspection.

Abstract: A method of detecting local mechanical stress in integrated devices is provided, the method comprising: enabling the detection of a photovoltage difference between a scan probe device and a surface portion of an integrated device, the scan probe device being configured to deflect in response to the photovoltage difference; measuring the deflection of the scan probe device in response to the photovoltage difference between the scan probe device and the surface portion of the integrated device; and calculating a local stress level within the integrated device by determining a local work function of the surface portion of the integrated device based upon the deflection of the scan probe device.