Abstract: A test and measurement probe coupler that may include a substrate, a first signal tap conductor, a first signal contact, a first ground tap conductor, and a first ground contact. The first signal tap conductor may extends a first length along the substrate. The first signal contact may be electrically coupled to the first signal tap conductor, and the first ground tap conductor may extend a second length along the substrate. The first ground tap conductor may be substantially parallel to the first signal tap conductor. The first ground tap conductor may be disposed in a first lateral direction away from the first signal tap conductor, and the first ground contact electrically may be coupled to the first ground tap conductor.

Abstract: A signal transfer structure including a tapered input line extending in a first direction and having an input terminal and a contact terminal, a width of the input line increasing from the input terminal to the contact terminal in the first direction and a signal being input to the input terminal; a diverging line in contact with the contact terminal of the input line and extending in a second direction different from the first direction; an output line connected to the diverging line and from which the signal is output; and an interconnector, the interconnector including a vertical via between the diverging line and the output line and a via line connected to the vertical via and having a same characteristic impedance as the output line.

Abstract: An electric field imaging device is provided with which it is possible to visualize as a dynamic state an electromagnetic field intensity distribution and a phase delay/advance distribution in the vicinity of a product, using a sample of the actual product without lead-out lines. The electric field imaging device includes: an antenna which accepts a high-frequency signal emitted by the sample as an input; an electrooptic (EO) crystal plate which is a frequency fRF high-frequency electric field sensor; a flashing light source which radiates polarized light onto the EO crystal plate; an optical system leading to an analyzer for detecting phase changes in polarized light obtained by means of the EO crystal plate; an image capturing device which converts an in-plane distribution of optical beam from the analyzer into an electrical signal; and an information processing device which processes and displays an output signal from the image capturing device.

Abstract: Techniques for improving reliability of III-N devices include holding the III-N devices at a first temperature less than or equal to 30° for a first period of time while applying a first gate-source voltage lower than a threshold voltage of the III-N devices and a first drain-source voltage greater than 0.2 times a break down voltage of the III-N devices; and holding the III-N devices at a second temperature greater than the first temperature for a second period of time while applying a second gate-source voltage lower than a threshold voltage of the III-N devices and a second drain-source voltage greater than 0.2 times a breakdown voltage of the III-N devices. After holding the III-N devices at the first and second temperatures, screening the III-N devices based on electrical performance of one or more parameters of the III-N devices.

Abstract: Systems for screening and health monitoring of materials are provided. The system can include a material embedded with magneto-electric nanoparticles (MENs), a laser configured to direct incident laser light waves at a target area of the material, an optical filter disposed between the laser and the material, and an analyzer configured to detect the laser light reflected from the material.

Abstract: An apparatus comprises a contactless sense probe, an electro optic sensor module, and a test signal emitter circuit. The contactless sense probe includes a photoconductive switch and the signal bandwidth of the photoconductive switch is variable. The test signal emitter circuit configured to apply a test signal to a device under test (DUT) at a first location of the DUT, wherein the test signal includes a test signal frequency. The electro-optic sensor module is coupled to the contactless sense probe and configured to: generate an impulse signal at the contactless sense probe using an optical signal input to the first photoconductive switch; sense the test signal frequency in the impulse signal using the contactless sense probe at a second location of the DUT; and generate an indication of a defect in the DUT when the test signal frequency is undetected in the impulse signal.

Abstract: Material test structures having cantilever portions and methods of forming the same are described herein. As an example, a method of forming a material test structure includes forming a number of electrode portions in a first dielectric material, forming a second dielectric material on the first dielectric material, wherein the second dielectric material includes a first cantilever portion and a second cantilever portion, and forming a test material on the number of electrode portions, the first dielectric material, and the second dielectric material.

Abstract: A semiconductor device measurement apparatus 1A includes a tester 2 that generates an operational pulse signal to be input to a semiconductor device 3, a light source 5 that generates light, a light branch optical system 6 that irradiates the semiconductor device with the light, a light detector 7 that detects reflected light obtained by the semiconductor device 3 reflecting the light, and outputs a detection signal, an analog signal amplifier 8 that amplifies the detection signal and outputs an amplified signal, and an analysis apparatus 10 that analyzes an operation of the semiconductor device 3 based on the amplified signal and a predetermined correction value, wherein the predetermined correction value is obtained based on a signal obtained by the analog signal amplifier 8 amplifying a signal corresponding to a harmonic of a fundamental frequency of the operational pulse signal.

Abstract: A method of accelerating the aging of a laser to thereby determine the reliability of the laser. The method includes an act of providing a laser die for reliability testing, an act of applying a plurality of short signal pulses to the laser die so as to simulate the aging of the laser die, and an act of ascertaining the reliability of the laser die based on its response to the plurality of short signal pulses.

Abstract: A probe module for testing an electronic device comprises at least two contacts, each contact including a first end portion extending in a first direction along a first line, a second end portion extending linearly in a second direction opposite from the first direction and along a second line, and a third curved portion extending between the first end portion and the second end portion. The first line is spaced apart from and in parallel with the second line, and the at least two contacts are spaced apart from each other in a direction perpendicular to the first line and the second line. Methods for making such a probe module are also taught.

Abstract: A Two-Photon Laser Assisted Device Alteration technique is presented. Fault localization is investigated by exploiting the non-linear two-photon absorption mechanism to induce LADA effects. Femtosecond laser pulses of wavelength having photon energy lower than the silicon bandgap are directed at the area of interest, while the DUT is stimulated with test vectors. The laser pulses are synchronized to the DUT stimulation, so that switching timing can be altered using the two-photon absorption effect.

Abstract: A measuring probe, particularly for a non-contacting vector network analysis system, having a housing and at least one coupling structure disposed on the housing and designed for coupling an HF signal from a signal line, such that at least one additional signal probe is disposed on the housing for coupling an electrical signal into the signal line.

Abstract: A probe defining a transmission line for use with a measurement instrument includes a pulse circuit connected to the probe for generating pulses on the transmission line and receiving reflected pulses on the transmission line. The probe comprises a conductive outer sleeve for mounting to a process vessel. A center conductor is coaxial with the outer sleeve for conducting the pulses. A primary seal element between the outer sleeve and the center conductor is spaced a select distance from a near end of the outer sleeve. A secondary seal element between the outer sleeve and the center conductor is spaced proximate the near end of the outer sleeve, to define a generally tubular space between the primary seal element and the secondary seal element. A dielectric insert fills a portion of the tubular space proximate the secondary seal element. A leak detection tube is in the tubular space between the dielectric insert and the primary seal element.

Abstract: A micromachining process to fabricate a single chip that simple drops into a supporting structure. The micromachining process provides the ability to create a probe that will interface with integrated circuits, for example, operating at frequencies in the range of about 100 GHz to about 3,000 GHz (3 THz). This approach creates a silicon structure (or other applicable choice of material) that provides mechanical force for probing while supporting the transfer of the high frequency energy between a measurement system and the integrated circuit, individual device or material.

Abstract: A probe for high frequency signal transmission includes a metal pin, and a metal line spacedly arranged on and electrically insulated from the metal pin and electrically connected to grounding potential so as to maintain the characteristic impedance of the probe upon transmitting high frequency signal. The maximum diameter of the probe is substantially equal to or smaller than two times of the diameter of the metal pin. Under this circumstance, a big amount of probes can be installed in a probe card for probing a big amount of electronic devices, so that a wafer-level electronic test can be achieved efficiently and rapidly.

Abstract: A signal acquisition system has a signal acquisition probe having probe tip circuitry coupled to a resistive center conductor signal cable. The resistive center conductor signal cable of the signal acquisition probe is coupled to a compensation system in a signal processing instrument via an input node and input circuitry in the signal processing instrument. The signal acquisition probe and the signal processing instrument have mismatched time constants at the input node with the compensation system providing pole-zero pairs for maintaining flatness over the signal acquisition system frequency bandwidth.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.