Abstract: A module substrate for a semiconductor module includes: a wiring substrate having an upper surface and a lower surface opposite to the upper surface, wherein the wiring substrate includes a circuit wiring and a plurality of via holes extending from the upper surface to the lower surface in a thickness direction; a plurality of test terminals respectively provided on the via holes and electrically connected to the circuit wiring, and a fastening thin film provided on the wiring substrate and covering the via holes, wherein the fastening thin film has a predetermined thickness such that a portion of the fastening thin film is penetrated when an interface is pin is inserted into the portion of the fastening thin film through the via hole from the upper surface, and the portion of the penetrated fastening thin film holds the penetrating interface inspection pin.

Abstract: Integrated circuit (IC) chip die to die channel interconnect configurations (systems and methods for their manufacture) may improve signaling to and through a single ended bus data signal communication channel by including on-die induction structures; on-die interconnect features; on-package first level die bump designs and ground webbing structures; on-package high speed horizontal data signal transmission lines; on-package vertical data signal transmission interconnects; and/or on-package electro-optical (EO) connectors in various die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through one or more semiconductor device package devices, that may include an electro-optical (EO) connector upon which at least one package device may be mounted, and/or be semiconductor device packages in a package-on-package configuration.

Abstract: Methods of synthesis and fabrication of a transition metal dichalcogenide (TMD) structures are disclosed. A method can include first patterning a transition metal (TM) on a substrate and placing the substrate in a process chamber. Oxygen can be applied to the transition metal on the substrate and a mixture of highly reactive transition metal oxides can be formed and simultaneously thinned down by sublimation. Finally, a chalcogen can be applied to the substrate and a transition metal dichalcogenide structure can be formed.

Abstract: A functional contactor is provided. The functional contactor according to one embodiment of the present invention includes: a conductive elastic portion configured to be in electrical contact with a conductor of an electronic device and have elasticity; and a functional device including a first electrode electrically connected to a circuit board or the conductor of the electronic device and a second electrode on which the conductive elastic portion is laminated through solder. Here, the second electrode includes a stopper in which no electrode is formed to prevent the solder from being introduced into a periphery of a lamination region on which the conductive elastic portion is laminated.

Abstract: Disclosed is a shunt resistor for measuring current, and a shunt resistor for measuring current, in which one or more protrusions having an unevenness shape, which are formed on one lateral surface of a shunt resistor and one or more solders are bonded to each other, respectively and the shunt resistor and a printed circuit board are electrically connected to each other to measure current of a battery through a shunt resistance included in the shunt resistor unit.

Abstract: A method in accordance with various embodiments may include: measuring a contact force between at least one probe and at least one contact pad for a plurality of probe overdrive positions, and determining a relationship between contact force and probe overdrive position from the measured contact forces; determining a first region in the relationship exhibiting a non-linear dependence of the contact force from the probe overdrive position, and a second region exhibiting a linear dependence of the contact force from the probe overdrive position; and determining a process window for a pad probing process based on the determined first region and second region.

Abstract: A method and structure for improving signal integrity probing. A coaxial or a microcoaxial cable is threaded through an optional alignment substrate where the cable is used to support or align the cable or an array of cables. A conductive elastomer is placed on a cable or a microcoaxial cable to improve signal integrity probing.

Abstract: The terminals of a device under test (DUT) are temporarily electrically connected to corresponding contact pads on a load board by a series of electrically conductive pin pairs. The pin pairs are held in place by an interposer membrane with a top facing the device under test, a bottom facing the load board, and a vertically resilient, non-conductive member between the top and bottom contact plates. Each pin pair includes a top and bottom pin, which extend beyond the top and bottom contact plates, respectively, toward the device under test and the load board, respectively. The bottom pins has a lower contact surface which includes an arcuate portion or ridge which increases contact pressure and ablates oxides by the rocking action of ridge when the DUT in inserted.

Abstract: A probing apparatus for semiconductor devices provides a primary circuit board and a signal-adapting board positioned on the primary circuit board. The primary circuit board includes an inner area having a plurality of first contacts and an outer area having a plurality of first terminals and second terminals, and the first contacts are electrically connected to the first terminals via first conductive members in the primary circuit board. The signal-adapting board includes a plurality of second contacts electrically connected to the first contacts via second conductive members in the signal-adapting board.

Abstract: A test probe is provided for probing signal information on a back-drilled plated through hole connector formed in a printed circuit board, where the test probe includes a conductive probe body with a distal tip region extending a predetermined minimum coverage length (LTIP) that is longer than a recess depth dimension (DPL) for a recessed plating layer formed in the back-drilled plated through hole connector with an elastomer test probe tip formed around the distal tip region and having a total tip width (WTIP) which is compressed when inserted into the recessed plating layer formed in a back-drilled plated through hole connector, thereby establishing a conductive path between the conductive probe body and the recessed plating layer.

Abstract: High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.

Abstract: A system for detecting stray voltage in a conductive object is disclosed herein. The system includes a pick-up element, electrical circuitry, a housing for enclosing the circuitry, a support for mounting the housing, and an indicator. The pick-up element is separated from the conductive object and capable of detecting an electric field from the conductive object. The support of the housing is such that the pick-up element remains separated from the conductive object. The electrical circuitry determines a voltage level corresponding to the electric field detected by the pick-up element and generates, based on a comparison of the determined voltage level relative to a reference voltage level, an indicator signal representative of whether stray voltage is present in the conductive object. Based on the indicator signal, the indicator indicates to a user of the system whether stray voltage is present in the conductive object.

Abstract: A method of testing an electrical component includes coupling the electrical component to at least a first probe, a second probe, and a third probe. The probes are in communication with a test control module. Furthermore, the method includes confirming that the probes are in sufficient electrical connection with the electrical component by allowing the test control module to supply a current through the electrical component via the first probe and the third probe, and simultaneously detecting a potential difference across the electrical component by the second probe and the third probe. Furthermore, the method includes testing a performance characteristic of the electrical component by supplying a redundant signal to the electrical component via at least two of the first probe, the second probe, and the third probe.

Abstract: A substrate, preferably constructed of a ductile material and a tool having the desired shape of the resulting device for contacting contact pads on a test device is brought into contact with the substrate. The tool is preferably constructed of a material that is harder than the substrate so that a depression can be readily made therein. A dielectric (insulative) layer, that is preferably patterned, is supported by the substrate. A conductive material is located within the depressions and then preferably lapped to remove excess from the top surface of the dielectric layer and to provide a flat overall surface. A trace is patterned on the dielectric layer and the conductive material. A polyimide layer is then preferably patterned over the entire surface. The substrate is then removed by any suitable process.

Abstract: A method of testing a semiconductor device includes providing a first wafer that includes a first surface, a second surface that is allocated at an opposite side of the first surface, a first electrode penetrating the first wafer from the first surface to the second surface, and a pad formed on the first surface and coupled electrically with the first electrode, providing a second wafer that includes a second electrode penetrating the second wafer, stacking the first wafer onto the second wafer to connect the first electrode with the second electrode such that the second surface of the first wafer faces the second wafer, probing a needle to the pad, and supplying, in such a state that the first wafer is stacked on the second wafer, a test signal to the first electrode to input the test signal into the second wafer via the first electrode and the second electrode.

Abstract: A test point of a circuit board is probed using an edge probe provided in a fixed orientation when the edge of the probe contacts a solder mound of the test point. The solder mound has an elongated shape. A length of the edge is substantially perpendicular to a length of the solder mound when the edge contacts the solder mound and is maintained in the fixed orientation.

Abstract: [Problems to be solved] To provide a test-use individual substrate capable of improving testing accuracy and connecting reliability. [Means for solving the Problems] A test-use individual substrate 30 which is used for testing a semiconductor wafer, comprises a main body portion 31, thin portions 321, 322 extending from the main body portion 31 and being relatively thinner than the main body portion, and bumps 33 provided on the thin portions 321, 322. [Selected Drawing] FIG.