Abstract: Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

Abstract: Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

Abstract: During electron beam imaging of a semiconductor wafer, the electron beam is adjusted to a first electron dose/nm2/time value below a damage threshold for an image frame grab of a site on the semiconductor wafer. Then the electron beam is adjusted to a second electron dose/nm2/time value different from the first electron dose/nm2/time value for a second image frame grab of the site. The second electron dose/nm2/time value can be above the damage threshold.

Abstract: An inspection apparatus includes a light sensor that detects light from a semiconductor device to which an electric signal has been input, an optical system that guides light from the semiconductor device to the light sensor, and a control device electrically connected to the light sensor. The control device includes a measurement unit that acquires waveform data obtained by optical measurement for each of a plurality of positions on a defective semiconductor device and waveform data obtained by the optical measurement for each of a plurality of positions on a non-defective semiconductor device, a calculation unit that calculates a degree of correspondence between the waveform data of the defective semiconductor device and the waveform data of the non-defective semiconductor device, and an analysis unit that analyzes a defective part of the defective semiconductor device on the basis of the degree of correspondence for each of the plurality of positions.

Abstract: An inspection device includes a reference signal output section, a noise removal section, and an electrical characteristic measurement section. The reference signal output section is connected to an external power supply device in electrical parallel with a semiconductor sample, and outputs a reference signal according to the output of the external power supply device. The noise removal section outputs a noise removal signal obtained by removing a noise component of the output of the external power supply device from the current signal output from the semiconductor sample based on the reference signal. The electrical characteristic measurement section measures the electrical characteristic of the semiconductor sample based on the noise removal signal. The inspection device measures the electrical characteristic of the semiconductor sample to which a voltage is being applied by the external power supply device and which is being irradiated and scanned with light.

Abstract: Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.

Abstract: To accomplish fast automated micro-sampling, provided is a charged particle beam apparatus, which is configured to automatically fabricate a sample piece from a sample, the charged particle beam apparatus including: a charged particle beam irradiation optical system configured to radiate a charged particle beam; a sample stage configured to move the sample that is placed on the sample stage; a sample piece transportation unit configured to hold and convey the sample piece separated and extracted from the sample; a holder fixing base configured to hold a sample piece holder to which the sample piece is transported; and a computer configured to perform position control with respect to a second target, based on a machine learning model in which first information including a first image of a first target is learned, and on second information including a second image, which is obtained by irradiation with the charged particle beam.

Abstract: An inspecting device of a display panel includes a contact including first probe pins that contact to data pads of a display panel and second probe pins that contact to common voltage pads of the display panel, a signal generator coupled to the first probe pins, the signal generator configured to generate a first data voltage corresponding to a first gray level and a second data voltage corresponding to a second gray level, a power generator coupled to the second probe pins, the power generator configured to generate a first common voltage and a second common voltage of which a voltage level is different from a voltage level of the second common voltage, and a defect detector configured to detect a defect of the display panel by removing a contact noise generated due to contact failure of the first probe pins and the second probe pins.

Abstract: A reconfigurable optic probe is used to measure signals from a device under test. The reconfigurable optic probe is positioned at a target probe location within a cell of the device under test. The cell including a target net to be measured and non-target nets. A test pattern is applied to the cell and a laser probe (LP) waveform is obtained in response. A target net waveform is extracted from the LP waveform by: i) configuring the reconfigurable optic probe to produce a ring-shaped beam having a relatively low-intensity region central to the ring-shaped beam; (ii) re-applying the test pattern to the cell at the target probe location with the relatively low-intensity region applied to the target net and obtaining a cross-talk LP waveform in response; (iii) normalizing the cross-talk LP waveform; and (iv) determining a target net waveform by subtracting the normalized cross-talk LP waveform from the LP waveform.

Abstract: The present invention provides a method for calibrating verticality of a particle beam. The method includes: providing a baseplate having a first sensor and a second sensor; emitting the particle beam to the first sensor of the baseplate from an emitter, such that a first datum is collected when the first sensor receives the particle beam; emitting the particle beam to the second sensor of the baseplate from the emitter, such that a second datum is collected when the second sensor receives the particle beam; calculating a first calibrating datum based on the first datum and the second datum; and adjusting the baseplate or the emitter based on the first calibrating datum if the first calibrating datum is out of a first predetermined range.

Abstract: A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first feature has a first electrical resistance, the second feature has a second electrical resistance, and the first electrical resistance is different form the second electrical resistance; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.

Abstract: A stack of vertically-connected, horizontally-oriented integrated circuits (ICs) may have electrical connections from the front side of one IC to the back side of another IC. Electrical signals may be transferred from the back side of one IC to the front side of the same IC by means of through substrate vias (TSVs), which may include through silicon vias. Electronic apparatus, systems, and methods may operate to test and/or replace defective TSVs. Additional apparatus, systems and methods are disclosed.

Abstract: A voltage contrast imaging defect detection system includes a voltage contrast imaging tool and a controller coupled to the voltage contrast imaging tool. The controller is configured to generate one or more voltage contrast imaging metrics for one or more structures on a sample, determine one or more target areas on the sample based on the one or more voltage contrast imaging metrics, receive a voltage contrast imaging dataset for the one or more target areas on the sample from the voltage contrast imaging tool, and detect one or more defects based on the voltage contrast imaging dataset.

Abstract: An integrated circuit layout is described that uses a library cells with alternating conducting lines. One embodiment includes a first cell and a second cell, the second cell being adjacent to the first cell. The first cell has a first plurality of conductive lines, a first portion of the first plurality having line ends that are a first distance from the second cell. The second cell has a second plurality of conductive lines, the conductive lines being parallel to and aligned with the conductive lines in the first cell, a second portion of the second plurality having line ends that are a second distance from the first cell. The first distance is shorter than the second distance.

Abstract: There is provided an electron microscope capable of producing good images by reducing contrast nonuniformity.

Abstract: Multi-beam scanning electron microscope (SEM) inspection systems with dark field imaging capabilities are disclosed. An SEM inspection system may include an electron source and at least one optical device. The at least one optical device may be configured to produce a plurality of primary beamlets utilizing electrons provided by the electron source and deliver the plurality of primary beamlets toward a target. The apparatus may also include an array of detectors configured to receive a plurality of image beamlets emitted by the target in response to the plurality of primary beamlets and produce at least one dark field image of the target.

Abstract: A probe assembly for analyzing a test device that includes a housing with an electron source disposed therein for emitting primary electrons. A photon source is positioned to emit photons that strike the electron source such that when the photons strike the electron source, the electron source emits the primary electrons. Detection circuitry is provided that is configured to detect secondary electrons emitted from a test device of a test assembly and to form an excitation waveform.

Abstract: A method of aging a substrate-processing apparatus according to the inventive concepts may include receiving advance information of a scheduled substrate-receiving container to be loaded on a load port of the substrate-processing apparatus from a host computer, and loading a test substrate into a process chamber to perform an inspection process by means of the advance information.

Abstract: A test system for testing devices is disclosed. The test system includes a scanning microscope module and a test module. The scanning microscope module, when testing a device under test (DUT), is configured to perturb the DUT with a laser at a test (pixel) location. The test module includes a tester unit, a reference failure log containing prior failing compare vectors of interest, and a comparator unit which includes a software comparator. The tester unit is configured to perform a test run at the test location of the DUT with a test pattern. If the test run fails testing, the tester unit is configured to compare using the comparator unit to determine if failing test vectors of the test run matches a desired failure signature, and to generate a comparator trigger pulse if failing test vectors match the prior failure signature. The trigger pulse indicates that the test location of the DUT is a failed location.

Abstract: Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Abstract: Aspects of the present disclosure provide an apparatus comprising a primary beam column configured to direct a primary beam of energetic particles onto a location of interest on a sample containing one or more integrated circuit structures, a detector configured to produce a signal in response to detection of secondary charged particles generated as a result of an interaction between the primary beam of energetic particles and the location of interest, and a signal processor coupled to the detector configured to measure the transient behavior of generation of the secondary charged particles from the signal produced by the detector, and a characterizing module configured to characterize the location of interest by comparing the measured transient behavior to a predetermined reference transient behavior. The detector has a response that is fast enough to detect a transient behavior of generation of the secondary charged particles.

Abstract: An electron microscope and method of operating an electron microscope (1) has an electron beam source (11) for producing an electron beam, a noise canceling aperture (12) for detecting a part of the beam, an amplifier (42), an effective value calculating circuit (44) for extracting DC components of the output signal from the amplifier (42), a detector (15) for detecting a signal obtained in response to impingement of the beam on a sample (A), a preamplifier circuit (20), an amplifier circuit (30), a dividing circuit (54) for performing a division based on the output signal from the amplifier circuit (30) and on the output signal from the amplifier (42), and a multiplier circuit (58) for performing multiplication of the output signal from the dividing circuit (54) and the output from the effective value calculating circuit (44).

Abstract: Method and machine utilizes the real-time recipe to perform weak point inspection on a series of wafers during the fabrication of integrated circuits. Each real-time recipe essentially corresponds to a practical fabrication history of a wafer to be examined and/or the examination results of at least one examined wafer of same “lot”. Therefore, different wafers can be examined by using different recipes where each recipe corresponds to a specific condition of a wafer to be examined, even these wafers are received by a machine for examining at the same time.

Abstract: A semiconductor device includes, a semiconductor chip having a first surface over which bonding pads are positioned, a second surface which faces away from the first surface, and a plurality of signal lines formed over the first surface, extending in a first direction; a plurality of redistribution lines formed over the first surface, having one set of ends electrically coupled to the bonding pads of the semiconductor chip, and extending in a direction oblique to the first direction; and a plurality of redistribution pads disposed over the first surface, and electrically coupled with an other set of ends of the redistribution lines which face away from the one set of ends.

Abstract: The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions.

Abstract: A system and a method for evaluating a conductor, the method may include: illuminating a first area of a conductor by a first electron beam thereby charging the first area; illuminating by a second electron beam a second area of the conductor; and wherein an aggregate size of the first and second areas is a fraction of an overall size of the conductor; detecting, by a detector, detected emitted electrons that were emitted substantially from the second area and generating detection signals indicative of the detected emitted electrons; and processing, by a processor, the detection signals to provide information about a conductivity of the conductor.

Abstract: Apparatus and methods for non-contact testing of electronic components printed on a substrate (3) are provided. Test circuits (11) are printed on the substrate (3) at the same time as the desired electronic component. The test circuits (11) are all optical and include a first portion (13) for providing electrical energy for the test circuit (11) and a second portion (15) for generating a detectable optical signal that is indicative of at least one electrical property of the electronic component. The test circuits are used in real time and minimize the production of unusable scrap in the printing of such products as ePaper.

Abstract: A semiconductor device manufacturing method is disclosed by which electron beam irradiation is accomplished at a low cost while exhibiting uniform characteristics. A wafer stack consisting of multiple stacked wafers is irradiated with an electron beam from both the front surface and reverse surface. As such, a semiconductor device manufacturing method is provided whereby the electrical characteristics are extremely uniform between wafers, and costs are reduced by reducing the number of electron beam irradiations.

Abstract: A method for testing the sensitivity of electronic components and circuits against particle and photon beams using plasma acceleration, in which the flexibility of the multifaceted interaction can produce several types of radiation such as electron, proton, ion, neutron and photon radiation, and combinations of these types of radiation, in a wide range of parameters that are relevant to the use of electronic components in space, such as satellites, at high altitudes or in facilities that work with radioactive substances such as nuclear power plants. Relevant radiation parameter ranges are accessible by this method, which are hardly accessible with conventional accelerator technology. Because of the compactness of the procedure and its versatility, radiation testing can be performed in smaller laboratories at relatively low cost.

Abstract: A method is described for accurate measuring of the excess carrier lifetime on a semiconductor sample from the carrier decay after termination of the excitation pulse imposed on the steady-state carrier excitation. The method includes determining a quality of decay parameter using progressing segments in each carrier decay; establishing an accurate lifetime measurement multiparameter domain for experimental variables whereby the quality of decay parameter falls within prescribed limits from the ideal exponential decay value of QD=1; and determining an excess carrier lifetime for the semiconductor sample based on experimental measurement conditions within the domain and the quality of decay value within the predetermined range indicative of an accurate excess carrier lifetime measurement.

Abstract: A static random access memory (SRAM) test structure includes a p-type source/drain implant region comprising contacts (CAs), wherein the CAs in the p-type source/drain implant region comprise a first plurality of bit line, ground, and node CAs, and wherein the CAs in the p-type source/drain implant region are grounded during an inspection of the SRAM test structure; and an ungrounded region, the ungrounded region being distinct from the p-type source/drain implant region and being ungrounded during the inspection of the SRAM test structure, the ungrounded region comprising contacts (CAs) and rectangular contacts (CArecs) comprising a second plurality of bit line, ground, and node CAs, and further comprising a first plurality of Vdd CAs and rectangular contacts (CArecs), and wherein a CA or CArec in the ungrounded region is grounded during the inspection in the event of a short to a CA in the p-type source/drain implant region.

Abstract: A high-voltage supply unit is provided for a particle beam device. The high-voltage supply unit includes at least one high-voltage cable for feeding a high voltage, and at least one measuring device for measuring the high voltage. The measuring device has at least one first capacitor, and the first capacitor is formed by at least one first section of the high-voltage cable.

Abstract: Disclosed is a test method an apparatus in which an area for test and an area for analysis are specified based on the design information of the display device having a non-rectangular display area. To carry out testing, parasitic capacitances are found using the design information, and operations for weighting are performed on test data or threshold values based on which a decision on pass/fail is to be made.

Abstract: Through-silicon vias (TSVs) are tested using a modified integrated circuit test probe array, an electron beam generation device, a beam direction control device and an electron beam detection device. The TSV extends through a silicon substrate with end portions exposed or accessible by contacts disposed on opposing upper and lower surfaces of the substrate. The test probe array includes a test probe that accesses the lower TSV end portion and applies an AC test signal. An electron beam is directed by the beam direction control device onto the upper substrate surface such that a beam portion reflected from the upper TSV end portion is captured by the electron beam detection device. Reflected beam data is then analyzed to verify the TSV is properly formed. Various scan patterns, different test signal frequencies and an optional resistive coating are used to enhance the TSV testing process.

Abstract: In one embodiment, a method for inspecting an electronic component includes preparing a current detector which is electrically connected to a current detection terminal via a gating device, and electrically connecting the current detection terminal to an interconnect which is in the electronic component and on which a failure portion is suspected to be generated. The method further includes pulsing an electron beam and irradiating the interconnect with the electron beam, and detecting a current generated when the interconnect is irradiated with the electron beam, by the current detector, while adjusting an opening and a closing of a gate in the gating device.

Abstract: A testing device includes a laser source, a current testing device, and a processor. The processor includes a user interface, a control unit, a calculation unit, and a data generation unit. The user interface receives user inputs to determine control parameters. The control unit controls the laser source to emit a laser beam on a photoelectric conversion die according to the control parameters. The laser beam has an optical output power value P. The control unit also controls the current testing device to measure a current value I output by the photoelectric conversion die after the laser beam irradiating on the photoelectric conversion die. The calculation unit calculates a photoelectric conversion efficiency F according to the formula: F=P/I. The data generation unit processes the photoelectric conversion efficiency F which indicates the electro-optical property of the photoelectric conversion die.

Abstract: An embodiment of the invention provides an apparatus for measuring a conductive pattern on a substrate, which includes a first electro-optical modulator surrounding at least one first detecting roller; transmission rollers for transferring the substrate and allowing direct contact of the substrate and the first electro-optical modulator; a voltage supplier for providing a bias between the first electro-optical modulator and the substrate; and a first image detecting system for receiving a first detecting light reflected from a first surface of the substrate.

Abstract: A detector detects an electromagnetic wave having a frequency of 0.01 THz?f?100 THz and transmitted through a device under test (DUT). A changer changes a relative position of an intersection of an optical path of the electromagnetic wave and the DUT, with respect to the DUT. A deriver derives a characteristic value of the electromagnetic wave based on a detection result of the detector, while the characteristic value is associated with an assumed relative position, which is the relative position if the electromagnetic wave is not refracted by the DUT. A corrector changes the assumed relative position to an actual relative position, which is the relative position if the refraction of the electromagnetic wave by the DUT is considered. A corrected deriver derives the characteristic value associated with a predetermined relative position based on an output from the corrector.

Abstract: A method for characterizing an electric signal (10), includes the propagation of a first light beam (18) through an electro-optical medium (17) in a first propagation direction, wherein at least one optical property of the medium changes when it is submitted to an electrical field, and the propagation of a second light beam (19) through the electro-optical medium in a second propagation direction different from the first direction. For each light beam, a measurement of a variation in an optical property of the light beam (18; 19) due to the propagation of the beam in the medium (17) is used for determining the propagation direction (20) of an electric signal (10) submitting the medium to an electrical field. A device for implementing the method, and an electro-optical probe implemented in the device are also disclosed. Applicability: electro-optical sampling of a component, characterization of electric pulses in guided structures.

Abstract: A non-contact voltage contrast (VC) method of determining TSV joint integrity after partial assembly. A TSV die is provided including TSVs that extend from a frontside of the TSV die to TSV tips on a bottomside of the TSV die. At least some TSVs (contacting TSVs) are attached to pads on a top surface of a multilayer (ML) package substrate. The ML package substrate is on a substrate carrier that blocks electrical access to the frontside of the TSV die. Two or more nets including groups of contacting TSVs are tied common within the ML substrate. A charged particle reference beam is directed to a selected TSV within a first net and a charged particle primary beam is then rastered across the TSVs in the first net. VC signals emitted are detected, and joint integrity for the contacting TSVs to pads of the ML package substrate is determined from the VC signals.

Abstract: Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, the deposition is completed and the system is inspected for contamination.

Abstract: A defect inspection method includes generating and applies a charged beam to a sample with patterns; controlling a shape of the charged beam so that a beam width in a first direction perpendicular to an optical axis differs from a beam width in a second direction perpendicular to the optical axis and the first direction, while substantially maintaining a cross-sectional area of the beam; scanning the sample with the charged beam having the controlled shape; and detecting charged particles from the sample by irradiation of the charged beam and detects a defect of the patterns. Assuming that the beam width of the charged beam in the first direction is smaller than that in the second direction, the first direction is set to a direction in which an interval between adjacent patterns becomes a minimum value and the sample is scanned in the second direction.

Abstract: A latent-image measuring device that measures the state of a photoconductor. The latent-image measuring device emits a charged-particle beam to the photoconductor to detects a charged-particle signal obtained through the emission of the charged-particle beam. The latent-image measuring device then exposes the photoconductor a plurality of times to form electrostatic latent images on the photoconductor, and measures an amount of change in latent-image depth while changing a time interval between a plurality of exposures.

Abstract: A charged particle beam system for measuring a sample such as a photomask is provided. The system is capable of adjusting its condition with high accuracy to measure the sample even when a back surface of the sample is charged. The charged particle beam system measures an electric potential distribution on the back surface of the sample during a process for transporting the sample. The system controls the degree of charge neutralization of the sample based on the result of the measurement, or estimates or calculates an electric potential distribution appearing on a front surface of the sample and obtained when the sample is placed on the sample holder or the like. The system is capable of measuring or inspecting the sample such as a photomask at high speed and with high accuracy even when the sample has a large amount of charges accumulated on its surface different from its pattern surface.

Abstract: The present invention relates to a device for testing an optoelectronic module, comprising a first source for generating an electromagnetic beam or particle beam, a second source for illuminating the optoelectronic module; and a detector. In addition, a method for testing an optoelectronic module is provided comprising illuminating the optoelectronic module, directing an electromagnetic beam or particle beam and detecting defects in the optoelectronic module. The illumination additional to the electromagnetic beam or particle beam makes defects visible which otherwise would not be detected.

Abstract: Surface photo-voltage measurements are used to accurately determine very long steady state diffusion length of minority carriers and to determine iron contaminant concentrations and other recombination centers in very pure wafers. Disclosed methods use multiple (e.g., at least two) non-steady state surface photovoltage measurements of diffusion length done at multiple (e.g., at least two) modulation frequencies. The measured diffusion lengths are then used to obtain a steady state diffusion length with an algorithm extrapolating diffusion length to zero frequency. The iron contaminant concentration is obtained from near steady state measurement of diffusion length at elevated frequency before and after iron activation. The concentration of other recombination centers can then be determined from the steady state diffusion length and the iron concentration measured at elevated frequency.

Abstract: An apparatus for providing modulation mapping is disclosed. The apparatus includes a laser source, a motion mechanism providing relative motion between the laser beam and the DUT, signal collection mechanism, which include a photodetector and appropriate electronics for collecting modulated laser light reflected from the DUT, and a display mechanism for displaying a spatial modulation map which consists of the collected modulated laser light over a selected time period and a selected area of the IC.

Abstract: A visual inspection apparatus and method using the scanning electron microscope are disclosed. An electron beam is scanned repeatedly on a sample, and an inspection and a reference image are generated by the secondary electrons generated from the sample or reflected electrons. From the differential image between the inspection image and the reference image, a defect is determined. The number of pixels in the generated image along the direction of repetitive scanning by the electron beam can be changed.

Abstract: A method for testing a plurality of electronic devices formed on a large area substrate is described. In one embodiment, the method includes transferring a substrate on an end effector relative to a testing platform having a plurality of testing columns coupled thereto, the substrate having a plurality of electronic devices located thereon, and moving the substrate in a single directional axis relative to an optical axis of each of the plurality of testing columns, the single directional axis being substantially orthogonal to the optical axis to define a test area on the substrate, wherein the test area is configured to cover an entire length or an entire width of the substrate such that the testing columns are capable of testing the entire substrate as the substrate is moved through the test area.

Abstract: An evaluation board, on which is mounted a chip to be evaluated is provided. Particularly, the evaluation board includes a monitoring window for monitoring a power supply part, a ground part, and a surface of the chip, a first signal input part for inputting signals to the chip, and a second signal input part for inputting signals to the chip, wherein the second signal input part is placed as to sandwich said monitoring window between itself and the first signal input part.