Abstract: The present application discloses a full adder circuit and a multi-bit full adder. In the full adder circuit, an in-memory computing field-effect transistor stores data and performs logic operation on the data in the transistor and the loaded data according to different input signals; and a low-area full adder circuit is realized with very few transistors through the characteristics and the reading and writing modes of the in-memory computing field-effect transistor. The full adder circuit has a simple structure, which is greatly reduces the area and complexity of the full adder circuit, and saves 19 transistors compared with the traditional CMOS full adder circuits.

Abstract: The embodiments herein rely on cross reticle wires (also referred to as cross die wires) to provide communication channels between programmable dies already formed on a wafer. Using cross reticle wires to facilitate x-die communication can be three to four orders of magnitude faster than using general purpose I/O. With a wafer containing cross reticle wires, various device geometries can be generated at dicing time by cutting across different reticle boundaries. This allows up to full wafer-size devices, or several smaller sub-wafer devices to be derived from one wafer. Although the programmable dies can contain defects, these defects can be identified and avoided when generating a bitstream for configuring programmable features in the programmable dies.

Abstract: Sub-threshold current reduction circuit (SCRC) switches and related apparatuses and methods are disclosed. An apparatus includes an electronic circuit, a first set of SCRC switches, and a second set of SCRC switches. The electronic circuit includes first circuitry and second circuitry. The first set of SCRC switches are at one or more SCRC regions of an integrated circuit device including the electronic circuit. The first set of SCRC switches are configured to provide power to the first circuitry. At least one second SCRC switch of the second set of SCRC switches is positioned between one of the first set of SCRC switches and another of the first set of SCRC switches. The second set of SCRC switches is configured to provide power to the second circuitry.

Abstract: A programmable device includes a functional module, a pre-allocation manager, a first connection line, and a second connection line, wherein the pre-allocation managers are connected by the first connection lines, and the pre-allocation managers are connected to the functional modules by the second connection lines; the first connection lines are used for data transmission between the pre-allocation mangers, and a transmission direction is determined according to the configuration; the second connection lines are used for data transmission between the pre-allocation managers and the functional modules; the pre-allocation mangers are used for data transmission between the first connection lines and for data transmission between the first connection lines and the functional modules. The first connection lines are configured as connection line segments for transmission in both directions, and a wiring structure is designed in a direction and shape meeting wiring requirements.

Abstract: A method for controlling a fan in a fan start-up stage including a first time period and a second time period comprises the following steps of: during the first time period, continuously providing a first driving signal to drive the fan; and during the second time period, continuously providing a second driving signal to drive the fan; wherein, during the first time period the signal value (driving energy) of the first driving signal gradually decreases until being equal to the signal value of the second driving signal, and the signal value of the first driving signal is initially greater than the signal value of the second driving signal. A fan is also disclosed.

Abstract: In a semiconductor device capable of product-sum operation, variations in transistor characteristics are reduced. The semiconductor device includes a first circuit including a driver unit, a correction unit, and a holding unit, and an inverter circuit. The first circuit has a function of generating an inverted signal of a signal input to an input terminal of the first circuit and outputting the inverted signal to an output terminal of the first circuit. The driver unit includes a p-channel first transistor and an n-channel second transistor having a back gate. The correction unit has a function of correcting the threshold voltage of one or both of the first transistor and the second transistor. The holding unit has a function of holding the potential of the back gate of the second transistor. The output terminal of the first circuit is electrically connected to an input terminal of the inverter circuit.

Abstract: A locking mechanism for a computing device controls movement of a removable module within a computer chassis. The locking mechanism comprises a lock pin, a head, and a spring stopper. The lock pin includes an elongated shaft and a head. The spring stopper is disposed on the elongated shaft. The spring is disposed about the elongated shaft such that the spring extends from the spring stopper toward an end of the elongated shaft. As the lock pin moves along a longitudinal axis of the elongated shaft from a first position to a second position, the spring is configured to compress between the spring stopper and a fixed bracket in the computer chassis. The opposite second end extends through a hole in the removable module, thereby preventing the removable module from being removed from the computer chassis.

Abstract: According to various embodiments, an electronic device comprises a temperature sensor, a display, and a processor configured to operate by using a clock speed selected from among a plurality of clock speeds, wherein the processor may be configured to: execute a designated application by using one selected from among the plurality of clock speeds; check an external temperature by using the temperature sensor for at least some time during the execution of the designated application; when the external temperature falls to within a range of a first designated temperature, execute the designated application by using one selected from among the plurality of clock speeds according to a designated clock governor; and when the external temperature falls to within a range of a second designated temperature that is lower than the first designated temperature, execute the designated application by using one selected from among the plurality of clock speeds, except for some higher clock speeds, according to the designated

Abstract: A combinational logic circuit includes input circuitry to receive a first input signal that transitions between upper and lower voltages of a first voltage domain, and to generate, in response to the transitions of the first input signal, a first localized signal that transitions between upper and lower voltages of a second voltage domain. The combinational logic circuit additionally includes output circuitry to generate a first output signal that transitions between the upper and lower supply voltages of the first voltage domain based at least in part on the transitions of the first localized signal.

Abstract: An existing design of an integrated circuit includes existing cells that have already been placed and routed. An engineering change order (ECO) specifies additional new cells (ECO cells) to be inserted into the existing design. The ECO cells are also associated with target locations for their placement among the existing cells, but these target locations may violate design rules. The feasibility of “legalizing” the placement of the ECO cells within the existing design is assessed as follows. The ECO cells are clustered into clusters based on their target locations. Clusters are assessed by determining an ECO placement impact (EPI) index for individual clusters. The EPI index is a measure of the feasibility for legalizing the placement of the ECO cells in that cluster.

Abstract: An integrated circuit (IC) chip can include a given core at a position in the IC chip that defines a given orientation, wherein the given core is designed to perform a particular function. The IC chip can include another core designed to perform the particular function. The other core can be flipped and rotated by 180 degrees relative to the given core such that the other core is asymmetrically oriented with respect to the given core. The IC chip can also include a compare unit configured to compare outputs of the given core and the other core to detect a fault in the IC chip.

Abstract: A flat panel display includes a substrate including a display region and a non-display region disposed outside of the display region, a display unit disposed in the display region that displays an image, a plurality of first pads disposed in the non-display region that receive driving signals for driving the display unit, a plurality of second pads disposed in the non-display region that receive inspection signals for inspecting the display unit, a plurality of third pads disposed in the non-display region that receive alignment confirmation signals for confirming alignment, and a resistor coupled between at least two third pads of the plurality of third pads.

Abstract: A method and an apparatus for determining expansion compensation in a photoetching process, and a method for manufacturing a semiconductor device are provided. A relative vector misalignment value of a first wafer and a second wafer after being bonded is obtained based on a relative position relationship between a first alignment pattern of the first wafer and a second alignment pattern of the second wafer in a boding structure. A relative expansion value of the first wafer and the second wafer is obtained based on the relative vector misalignment value. A developing expansion compensation value in the photoetching process is obtained. The expansion compensation value is used to the photoetching process of a first conductor layer including the first alignment pattern of the first wafer and/or a second conductor layer including the second alignment pattern of the second wafer.

Abstract: A field-programmable gate array (“FPGA”) contains a configurable semiconductor organized in multiple clock regions with a clock fabric for facilitating user-defined logic functions. The clock fabric provides a set of regional clock signals (“RCSs”) generated from a clock source with a high clock signal quality (“CSQ”) for clocking logic blocks in a clock region. Also, a set of neighboring clock signals (“NCSs”) or inter-regional clock signals are generated from a neighboring clock source(s) for clocking logic blocks in two neighboring regions. In addition, the clock fabric is operable to provide secondary clock signals (“SCSs”) generated from the RCSs with a low CSQ for clocking logic blocks with less time-sensitive logic operations.

Abstract: The present disclosure describes an example method for cell placement in an integrated circuit layout design. The method includes retrieving, from a cell library, first and second cells each including a first local metal track proximate to a top boundary and a second local metal track proximate to a bottom boundary. The method includes placing, by a processor, the first and second cells in a layout area including global metal tracks of first and second types. Each global metal track of the first type and each global metal tracks of the second type alternate between one another in the layout area. The first and second local metal tracks of the first cell is aligned with adjacent first global metal track of the first and second types, respectively. The first and second local metal tracks of the second cell is aligned with adjacent second global metal track of the first and second types, respectively.

Abstract: According to various embodiments, a logic gate device includes a transistor, a first resistor, a second resistor and a third resistor. The first resistor is connected between a first input terminal of the logic gate device and a gate terminal of the transistor. The second resistor is connected between a second input terminal of the logic gate device and the gate terminal. The third resistor is connected between a voltage supply terminal and a first terminal of the transistor. The logic gate device is configured to generate an output voltage at the first terminal based on input voltages received at the first input terminal and the second input terminal.

Abstract: An example integrated circuit (IC) package includes: a processing system and a programmable IC disposed on a substrate, the processing system coupled to the programmable IC through interconnect of the substrate; the processing system including components coupled to a ring interconnect, the components including a processor and an interface controller. The programmable IC includes: an interface endpoint coupled to the interface controller through the interconnect; and at least one peripheral coupled to the interface endpoint and configured for communication with the ring interconnect of the processing system through the interconnect endpoint and the interface controller.

Abstract: Disclosed are semiconductor devices that include additional gate pads, and methods of fabricating and testing such devices. A device may include a first gate pad, a second gate pad, and a third gate pad. The first gate pad is connected to a gate including a gate oxide layer. The second and third gate pads are part of an electro-static discharge (ESD) protection network for the device. The ESD protection network is initially isolated from the first gate pad and hence from the gate and gate oxide layer. Accordingly, gate oxide integrity (GOI) testing can be effectively performed and the reliability and quality of the gate oxide layer can be checked. The second gate pad can be subsequently connected to the first gate pad to enable the ESD protection network, and the third gate pad can be subsequently connected to an external terminal when the device is packaged.

Abstract: A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.

Abstract: An IC includes a bare die and a multiplexed pin. The multiplexed pin is electrically connected to first and second switch circuits, the first and second switch circuits are respectively connected to first and second circuit modules disposed on the bare die and control a connection between the first and second circuit modules and the multiplexed pin, the first switch circuit is connected to a first die pad by a metal layer trace within the bare die, the second switch circuit is connected to a second die pad by a metal layer trace within the bare die, and the first and second die pads are connected to the multiplexed pin through a bond wire respectively. The bare die with a larger number of die pads can be packaged into an IC package with a smaller number of chip pins.

Abstract: In a semiconductor device having a variable gain amplifier, a setting error of a gain associated with a crosstalk noise is reduced. A switch block included in the variable gain amplifier includes a plurality of switch transistors Mp1, Mp2, MN1, and Mn2, and can variably set the parallel number of the switches used for coupling by selecting a forward coupling state for coupling the common wirings CSP, CSN to output wirings OUTP, OUTN, respectively, or a cross coupling state for coupling to OUTN, OUTP, respectively. Output wirings OUTN, OUTP form an output wiring pair by extending in a X direction while crossing each other through an underlying wiring layer ML[x-1]. At least one of the common wirings CSP, CSN is located next to the output wiring pair in a Y direction.

Abstract: Substrates, assemblies, and techniques for a transmission gate that includes an n-type back end transistor and a p-type back end transistor in parallel with the n-type back end transistor. The transmission gate can be on a non-silicon substrate and include a second gate, a p-type semiconducting layer over the second gate, an n-type semiconducting layer over the p-type semiconducting layer, a bit line over the n-type semiconducting layer, a first gate over the n-type semiconducting layer, and a source line over the n-type semiconducting layer. The transmission gate may be coupled to a memory element.

Abstract: The disclosure relates to a skew control circuit for controlling the skew between at least three clock signals, the clock signals being forwarded to different clock domains associated with the respective clock signals. The skew control circuit comprises multiple programmable delay elements arranged within a signal flow before the respective clock domain, a skew detector arrangement operable for detecting skews between at least two pairs of the clock signals, and a control circuit operable for adjusting delays caused by the programmable delay elements. The control circuit is operable for carrying out a de-skewing operation. The de-skewing operation comprises determining an order of occurrence of edges of the signals, selecting one of the programmable delay elements based on the determined order, and adjusting the delay caused by the selected programmable delay element.

Abstract: Apparatuses for providing a clock signal for a plurality of circuits of a semiconductor device within delays in a certain range are described. An example apparatus includes a signal wire including a first portion and a second portion, having one ends coupled to each other at a signal input and the other ends coupled to each other that extend in parallel. The second portion has a higher impedance than the first portion from the first end to the second end. Output buffers closer to the signal input are coupled to the second portion and output buffers farther to the signal input are coupled to the first portion.

Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.

Abstract: A combinational logic circuit includes input circuitry to receive a first input signal that transitions between upper and lower voltages of a first voltage domain, and to generate, in response to the transitions of the first input signal, a first localized signal that transitions between upper and lower voltages of a second voltage domain. The combinational logic circuit additionally includes output circuitry to generate a first output signal that transitions between the upper and lower supply voltages of the first voltage domain based at least in part on the transitions of the first localized signal.

Abstract: A method of generating an integrated circuit layout diagram includes arranging first cells having a first cell height in a first row and arranging second cells having a second cell height less than the first cell height in a second row abutting the first row. The first row and the second row extend along a first direction and are laid out relative to a routing grid including first routing tracks along the first direction and second routing tracks along a second direction perpendicular to the first direction. First cell pins are placed within each first cell extending along second routing tracks. Second cell pins are placed over selected via placement points in each second cell. At least one second cell pin extends along a corresponding second routing track across a boundary of a corresponding second cell and into a corresponding first cell abutting the corresponding second cell.

Abstract: An integrated circuit system-on-chip (SOC) includes a semiconductor substrate, a plurality of components made up of transistors formed in the substrate, and a plurality of interconnection lines providing electrical connectivity among the components. Use of a channel-less design eliminates interconnection channels on the top surface of the chip. Instead, interconnection lines are abutted to one another in a top layer of metallization, thus preserving 5-10% of chip real estate. Clock buffers that are typically positioned along interconnection channels between components are instead located within regions of the substrate that contain the components. Design rules for channel-less integrated circuits permit feed-through interconnections and exclude multi-fanout interconnections.

Abstract: A port expansion device is connected to a user interface terminal in an aircraft. The user interface terminal displays a first selection page designed to make it possible to select a peripheral system from among a first set of peripheral systems connected to the user interface terminal, so as to transfer graphical interface control to the selected peripheral system. A second set of peripheral systems are connected to the user interface terminal via control circuitry of the port expansion device, which emulates peripheral system behaviour. The control circuitry exports a name representative of a menu navigation action on the user interface terminal, and emulates a second selection page in the style of the first selection page generated by the user interface terminal, making it possible to select a peripheral system from among the second set of peripheral systems. The port expansion is thus performed transparently.

Abstract: A clock detector includes a first detector circuit, a second detector circuit, and a toggle detector circuit. The first detector circuit is for activating a first detect signal in response to detecting that a clock signal that toggles between first and second logic states when present is stuck in the first logic state, and keeping the first detect signal inactive otherwise. The second detector circuit is for providing a second detect signal in response to detecting that the clock signal is stuck in the second logic state, and keeping the second detect signal inactive otherwise. The toggle detector circuit is for activating a toggle detect signal in response to both the first detect signal and the second detect signal being inactive, and keeping the toggle detect signal inactive in response to an activation of either the first detect signal or the second detect signal.

Abstract: A system and method for a enhancing security for a high security embedded system. The system on chip device including at least one central processing unit (CPU) component, input and output component blocks, an independent hard or soft core dedicated to the input and output blocks, and a built-in, on die interposer, wherein the interposer consists of a field programmable gate array (FPGA) fabric, the FPGA fabric surrounding the components of the system on chip. The method for includes separating system components using a FPGA fabric, redirecting or changing the appearance of system components unknown to other system components, separating system code from security and recovery code, and providing proactive security problem detection and resolutions.

Abstract: A junction field-effect transistor (JFET) with a gate region that includes two separate sub-regions having material of different conductivity types and/or a Schottky junction that substantially suppresses gate current when the gate junction is forward-biased, as well as complementary circuits that incorporate such JFET devices.

Abstract: Described is an apparatus which comprises: a first non-magnetic conductor; a first spin orbit coupling (SOC) layer coupled to the first non-magnetic conductor; a first ferromagnet (FM) coupled to the SOC layer; a second FM; and an insulating FM sandwiched between the first and second FMs.

Abstract: The present invention relates to a method of processing data in a computer system, the method comprising the steps of: 1) allocating at least one processing node (100); 2) receiving data at a data source node (200, 400); 3) transferring the data to the or each processing node (100) through a serial data connection; 4) processing the data at the or each processing node (100); and 5) transferring the processed data from the or each processing node (100) to a data sink node (300, 400) through the serial data connection, wherein the at least one processing node (100), the data source node (200, 400) and the data sink (300, 400) each comprise no more than one Field Programmable Gate Array (101) or Application Specific Integrated Circuit.

Abstract: An example integrated circuit (IC) package includes: a processing system and a programmable IC disposed on a substrate, the processing system coupled to the programmable IC through interconnect of the substrate; the processing system including components coupled to a ring interconnect, the components including a processor and an interface controller. The programmable IC includes: an interface endpoint coupled to the interface controller through the interconnect; and at least one peripheral coupled to the interface endpoint and configured for communication with the ring interconnect of the processing system through the interconnect endpoint and the interface controller.

Abstract: Data hold time is controlled without excessively increasing a circuit area. A semiconductor device includes a data buffer and a flip-flop formed of fin. As a delay line, gate wirings being in the same layer as gate electrodes of the fin are provided in a data signal path from a data output node of the data buffer to a data input node of the flip-flop.

Abstract: A display device with a variant-shape display region other than the rectangular display region is configured to form a scanning line drive circuit, along the variant-shape display region. The scanning line drive circuit includes bus wiring group with clock wiring for supplying clocks with three or more phases and the power supply wring for supplying power, and the unit circuits for configuring the shift register including five or more transistors. The bus wiring and the unit circuits are formed on the different regions so as not to cross with one another.

Abstract: A circuit for routing data in an integrated circuit device is described. The circuit comprises an input/output port; an interface circuit coupled to the input/output port and configured to receive data, the interface circuit comprising a selection circuit enabling the selection of the data and a predetermined value; and a control circuit coupled to control the selection circuit; wherein the control circuit holds the input/output port at the predetermined value during a partial reconfiguration of the integrated circuit device in response to a control signal. A method of configuring a circuit for routing data in an integrated circuit device is also described.

Abstract: A method of a priority trainer of a many core processing system comprising a plurality of cores is disclosed.

Abstract: According to one embodiment, a circuit description generation apparatus includes: a reduction candidate extraction unit that generates a waveform of an input signal based on a verification vector, and extracts a candidate for reducing the number of stages of shift registers, based on a minimum value of the number of cycles that last until a change in a value of a signal represented by the waveform; and a reduction circuit generation unit that generates circuit information describing a circuit in which the reduction has been made, and verifies whether or not there is equivalence in output between a circuit before the reduction and a circuit after the reduction.

Abstract: A device having a design conversion from a field programmable gate array (FPGA) to an application specific integrated circuit (ASIC), comprising: a user configurable element in the FPGA replaced by a mask configurable element in the ASIC, wherein the FPGA and the ASIC have identical die size and identical transistor layouts.

Abstract: A display device with a variant-shape display region other than the rectangular display region is configured to form a scanning line drive circuit along the variant-shape display region. The scanning line drive circuit includes bus wiring group with clock wiring for supplying clocks with three or more phases and the power supply wiring for supplying power, and the unit circuits for configuring the shift register including five or more transistors. The bus wiring and the unit circuits are formed on the different regions so as not to cross with one another.

Abstract: A substrate support frame includes a body having an upper surface for supporting a first module substrate and a lower surface for supporting a second module substrate, and including a plurality of extending portions that define a cavity for receiving semiconductor devices mounted on first and second module substrates, a curved portion protruding outwardly from a first one of the extending portions of the body corresponding to a position of a flexible substrate that electrically connects the first and second module substrates to each other, the curved portion having a curved sectional shape protruding toward the flexible substrate, and a fastening hole penetrating through the first one of the extending portions of the body and configured to receive a screw to couple the body to at least one of the first and second module substrates.

Abstract: An object of the present invention is to provide a method for effectively performing characterization for circuit verification by static timing analysis, of a programmable logic integrated circuit including a crossbar switch including a resistance-variable element, and a logic circuit logically configured with the crossbar switch, wherein: the programmable logic integrated circuit is divided into a plurality of leaf cells including a plurality of load circuits including a part of the crossbar switch, and a power supply element input to the crossbar switch; the leaf cell is divided into delay paths each including a base leaf cell and a correction leaf cell; and circuit verification is performed based on a delay information library in which a delay time for the base leaf cell and a correction delay for the correction leaf cell are integrated into a delay time for the leaf cell.

Abstract: Implementing a circuit design for partial reconfiguration can include routing, using a processor, a net of the circuit design that connects an endpoint within a reconfigurable module with an endpoint within static circuitry external to the reconfigurable module and forming, using the processor, a set of candidate nodes including nodes used to route the net. A node from the set of candidate nodes is determined as the partition pin for partial reconfiguration.

Abstract: A semiconductor device which reduces power consumption. In the semiconductor device, semiconductor chips are stacked over a base chip. The stacked chips include n through-silicon vias as a first group and m through-silicon vias as a second group. In each of the first and second groups, the through-silicon vias are coupled by a shift circular method, in which the 1st to (n?1)th ((m?1)th) through-silicon vias of a lower chip are coupled with the 2nd to n-th (m-th) through-silicon vias of an upper chip respectively and the n-th (m-th) through-silicon via of the lower chip is coupled with the 1st through-silicon via of the upper chip. n and m have only one common divisor. Activation of the stacked semiconductor chips is controlled by combination of a first selection signal transmitted through through-silicon vias of the first group and a second selection signal transmitted through through-silicon vias of the second group.

Abstract: According to the embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, a first memory cell, a second memory cell, a third conductive layer, a first contact, a intermediate memory cell, a fourth conductive layer, a third memory cell, a fifth conductive layer, and a second contact. The third conductive layer is separated from the first conductive layer and the second conductive layer in a third direction crossing a first direction and crossing a second direction and extends in the second direction. The fifth conductive layer is separated from the second conductive layer in the third direction and extends in the second direction. A first length of the second conductive layer along the second direction is shorter than a second length of the fifth conductive layer along the second direction.

Abstract: An integrated circuit comprising a plurality of logic tiles, wherein each logic tile (i) is physically adjacent to at least one other logic tile of the plurality and (ii) includes a configurable switch interconnect network including a plurality of switches electrically interconnected and arranged into a plurality of switch matrices, wherein the plurality of switch matrices are arranged into a plurality of stages including: (a) at least two of the stages which is configured in a hierarchical network, and (b) a mesh stage, wherein each switch matrix of the mesh stage includes an output that is directly connected to an input of a plurality of different switch matrices of the mesh stage and wherein the mesh stage of switch matrices of each logic tile is directly connected to the mesh stage of switch matrices of at least one other logic tile of the plurality of the logic tiles.

Abstract: A semiconductor integrated circuit on a rectangular semiconductor substrate includes timing generation circuits having the same functions of generating control clock signals to corresponding input buffer circuits based on a control reference clock signal, and a parallel processing circuit unit divided into circuit blocks having equal areas and corresponding to the timing generation circuits. Each circuit block includes clock distribution networks corresponding to the control clock signals. The parallel processing circuit unit carries out processes in parallel for each clock distribution network. Each clock distribution network includes the input buffer circuit; a clock buffer circuit connected to the input buffer circuit and placed approximately in a central position of the corresponding circuit block relative to the semiconductor substrate longitudinal direction; and end devices. The clock buffer circuit outputs a control output clock signal to be distributed and supplied to the end devices.

Abstract: An integrated circuit includes a first portion of a stacked ring oscillator coupled between a first supply voltage node and a common node, wherein the first supply voltage node provides a local supply voltage for the first portion and the common node provides a local ground for the first portion. The integrated circuit includes a second portion of the stacked ring oscillator coupled between the common node and a second supply voltage node wherein the common node provides a local supply voltage for the second portion and the second supply voltage node provides a local ground for the second portion. The integrated circuit also includes a voltage divider having a first resistive element coupled between the first supply node and the common node and a second resistive element coupled between the common node and the second supply node.