Abstract: Latch circuits with improved single event upset immunity and related systems, apparatuses, and methods are disclosed. An apparatus includes a dual interlock storage cell (DICE) latch circuit including a first input node corresponding to a first path and a second input node corresponding to a second path. The first input node is electrically isolated from the second input node.

Abstract: A CML to CMOS signal conversion system includes a CML/CMOS converter coupled to a resistor, which is further coupled to a current compensation circuit at a reference node. The CML/CMOS converter receives a differential signal and applies a first or a second current to the reference node through the resistor. The current compensation circuit comprises a differential transistor pair coupled to a current source, a transistor, and a first, a second, and a third current mirror. The differential transistor pair receives the differential signal and has a pair of output terminals. The first current mirror is coupled to the output terminals. The third current mirror is coupled to the reference node. The first and third current mirror are coupled together by the transistor and sink the first current. The second current mirror is coupled to the output terminals and the reference node and sinks the second current.

Abstract: A gate drive circuit may include an output transistor that supplies a constant current to a gate of a switching element and drives the switching element on. A pre-driver may have a CMOS configuration including a p-channel MOS-FET and n-channel MOS-FET. The pre-driver may receive a gate control signal that drives the output transistor on/off. A reference current source may controls the gate voltage of a constant current transistor and provide a constant current from the constant current transistor A buffer amplifier may apply the gate voltage of the constant current transistor as the operating reference voltage of the pre-driver.

Abstract: A voltage level shifter with an input transistor pair, a cross-coupled load chain transistor pair and a pair of current sources, effects reduced power consumption through the use of the cross-coupled load chain transistor pair to minimize the DC current component present in known voltage level shifters. In specific embodiments, feedback elements may be used to minimize delays in signal transitions. A reference voltage that corresponds to a current capability of the input transistor pair may be used to regulate the current sources in the load chain. Changes in a swing of the input signal voltage received by the input transistor pair may be reflected in corresponding changes to the reference voltage. The voltage level shifter may be of particular use in a buffer.

Abstract: A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control signal in response to an external control signal from outside the front end module. The second functional block is formed using a second process type and includes a digitally controlled circuit controlled by the digital control signal generated by the first functional block. The second process type is different from the first process type. The interconnection circuit couples the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit. In one aspect, the first functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process.

Abstract: In hard disc drive (HDD) applications, there is often a need for input buffers that can operate at a variety of voltages (i.e., 1.8V, 2.5V, and 3.3V) as well as tolerate high voltages (i.e., 5V). Traditional buffers, however, usually lack the ability to operate at these varying voltages and lack the ability to tolerate high voltages. Here, a buffer is provided that fits this criteria through the use of a switching circuit and an anti-saturation circuit (as well as other circuitry).

Abstract: Electronic circuitry and techniques are disclosed for controlling one or more timing parameters associated with a circuit that converts a signal of a first type to a signal of a second type. For example, the converter circuit may convert a differential digital logic signal, such as a current mode logic (CML) signal, to a complementary metal oxide semiconductor (CMOS) signal. For example, apparatus for converting a first type of signal to a second type of signal comprises the following circuitry. First circuitry is configured for generating a first pair of CMOS signals in response to a differential digital logic signal, the first pair of CMOS signals comprising a first CMOS signal having a first polarity and a second CMOS signal having a second polarity.

Abstract: Electronic circuitry and techniques are disclosed for controlling one or more timing parameters associated with a circuit that converts a signal of a first type to a signal of a second type. For example, the converter circuit may convert a differential digital logic signal, such as a current mode logic (CML) signal, to a complementary metal oxide semiconductor (CMOS) signal. For example, apparatus for converting a first type of signal to a second type of signal comprises the following circuitry. First circuitry is configured for generating a first pair of CMOS signals in response to a differential digital logic signal, the first pair of CMOS signals comprising a first CMOS signal having a first polarity and a second CMOS signal having a second polarity.

Abstract: A CMOS output driver is provided for driving a capacitive load over a circuit trace in high speed applications. The CMOS output driver comprises a signal input and a signal output. The output driver has a first buffer amplifier with an input connected to the signal input and an output connected to the signal output through a resistor. A second buffer amplifier is also provided, which has an input connected to the signal input and an output connected to the signal output through a capacitor.

Abstract: A voltage level shifter with an input transistor pair, a cross-coupled load chain transistor pair and a pair of current sources, effects reduced power consumption through the use of the cross-coupled load chain transistor pair to minimize the DC current component present in known voltage level shifters. In specific embodiments, feedback elements may be used to minimize delays in signal transitions. A reference voltage that corresponds to a current capability of the input transistor pair may be used to regulate the current sources in the load chain. Changes in a swing of the input signal voltage received by the input transistor pair may be reflected in corresponding changes to the reference voltage. The voltage level shifter may be of particular use in a buffer.

Abstract: A plurality of transistors are connected between an I2C bus operating at a first voltage level and an I2C bus operating at a second voltage level and a main control electrode of at least one transistor is connected to a first power supply terminal and a main control electrode of the other at least one transistor is connected to an intermediate level between the first voltage level and the second voltage level, whereby a withstand voltage required to a transistor of the bidirectional level shift circuit of the I2C bus can be lowered.

Abstract: The present invention provides for a device to reduce the voltage swing for control signals. An input signal with a maximum potential of DVDD and minimum potential of AVSS is level shifted to a maximum potential of AVDD and a minimum potential of AVDD-DVDD. A series of control signals are generated from the level shifted input signal by standard logic cells. The shifting of the input signal reduces the voltage swing for the control signals. These control signals are then used to drive a device operating at a potential of AVDD.

Abstract: A level converter includes a cross-coupled section for holding data and a first switching section connected in series with the cross-coupled section and supplied with a differential input signal. The level converter has a second switching section, a current mirror connection section, a third switching section, and an input/output matching evaluation section. The second switching section is connected in parallel with the cross-coupled section, and the current mirror connection section is connected in a current-mirror configuration with a transistor in the second switching section. The third switching section is connected in series with the current mirror connection section, and the input/output matching evaluation section is used to control a transistor in the third switching section by receiving the input signal and an output node signal.

Abstract: The present invention discloses a level shift circuit which comprises: level shift means for receiving an input of a first operational voltage and generating an output of a second operational voltage; and a current path connecting with a source of the second operational voltage and providing current to the output of the level shift means to speed up output level switching. The circuit preferably further comprises a power consumption control circuit for stopping excess power consumption when the output of the level shift means has substantially accomplished level switching.

Abstract: The CML (current mode logic) to CMOS converter with a leakage balancing transistor for jitter reduction includes: a differential input stage; an output stage having a first branch coupled to a first output of the differential input stage and a second branch coupled to a second output of the differential input stage; and a leakage balancing transistor coupled to the first branch of the output stage.

Abstract: An integrated circuit comprising a first output stage circuit and a second output stage circuit that share common input terminals and an output terminal of the first and second output stage circuits being selectably coupled between the input terminals and the output terminal in preference to the other.

Abstract: A basic switching circuit combines CMOS and bipolar technique on SiGe basis and operates at a low operating voltage of only slightly more than 2V. To achieve this low operating voltage, switching operation of the circuit is effected by switching a constant current source of the switching circuit on or off using MOS transistors. In addition, the constant current source is implemented using a MOS transistor rather than a bipolar transistor, which basically acts as a controllable resistor. Moreover, the logic levels in the output signal are accurately controlled using a constant current source that is controlled by an operational amplifier and a resistor voltage divider at the output to pull the voltage level down by an amount that corresponds to the logical levels.

Abstract: The circuit configuration for converting logic levels has a bipolar input stage and a CMOS output stage. The bipolar input stage is equipped to process ECL and CML logic levels. The CMOS-logic output stage is equipped to supply trailing CMOS gates having CMOS logic levels. A difference amplifier includes bipolar transistors, which are connected to a common emitter current source and to separate collector current sources. An input-output feedback CMOS inverter is connected to one of the collectors, and the output of the inverter is coupled to an output node.

Abstract: The present invention provides a method and system for translating a signal from a chip with a negative substrate bias. The method and system includes receiving an input signal in a first state in a first logic level, the first state being approximately at ground; and translating the input signal to a second state in a second logic level, the second state being above ground. The method and system translates a signal from a chip with a negative substrate bias. In the preferred embodiment, the method and system of the present invention uses a translation circuit to translate and drive the signal off-chip. The translation circuit in accordance with the present invention functions with a positive Vcc and a Vee lower than ground, and also does not violate any of the rules of functionality for components used in a chip which has a negatively biased substrate and a voltage limit on its components.

Abstract: The present invention is a CML to CMOS converter which includes a bipolar input stage, a current source/current sink stage, and an output stage. The converter is able to transfer a CML input voltage differential to a CMOS compatible voltage having constant high and low voltage levels with a constant duty cycle. The bipolar input stage receives an incoming CML voltage differential and steps the voltage levels down. Utilizing the stepped down CML voltage differential, the current/source sink drives the output stage by maintaining an equal current source and current sink to and from the output stage, ensuring that an output voltage at the output stage rises and falls to constant high and low voltage levels, thereby maintaining a constant duty cycle. A first pair of NMOS transistors, coupled to the output stage drive current to the output stage from a high input voltage rail whenever the input differential is high.

Abstract: According to the present invention, an input circuit is provided comprising: an input terminal; a first power source terminal; a second power source terminal; a first bipolar transistor; a second bipolar transistor; a first electric current cut off member; a second electric current cut off member; a voltage clamping member; and a buffer. As a result, even when an electric potential greater than that of the power source voltage is applied to the input terminal, regardless of the supply or interruption of the power source voltage, destruction of the internal components is prevented and a steady-state electric current of the power source voltage and/or the input terminal is cut off. Hence, providing a PMOS transistor and NMOS transistor, serves to cut off the electric current routes of power source terminal VDD and the ground terminal.

Abstract: A CML-CMOS conversion circuit according to this invention includes: a differential circuit in which resistance is connected as load; a first current mirror circuit made up from an n-channel MOS transistor connected to one output of the differential circuit; a second current mirror circuit made up from an n-channel MOS transistor connected to the other output of the differential circuit; a third current mirror circuit made up of two p-channel MOS transistors connected in series to the first current mirror circuit and the second current mirror circuit; and a CMOS inverter that takes as input the output signal of the second current mirror circuit and that outputs a signal at CMOS logic amplitude.

Abstract: Several low power, low voltage swing, BiCMOS circuits for used in high speed chip-to-chip communications are described. In particular a BiCMOS low voltage swing transceiver comprising a driver and a receiver with low on-chip power consumption is reported. Operating at 3.3.V, the universal transceiver can drive and receive low voltage swing signals with termination voltages ranging from 5V down to 2V, without using external reference voltages and at frequencies exceeding 1 GHz. On-chip power consumption is much lower than that of known CML/ECL type transceivers having comparable speeds.

Abstract: A write driver, having a pair of inputs for receiving write data signals, includes a TTL buffer circuit connected to one input and a PECL buffer circuit connected to both inputs. A detector, responsive to a voltage at one of the inputs, selectively operates either the TTL buffer circuit or the PECL buffer circuit. The detector preferably comprises a comparator, a switching circuit, and two current mirrors. The comparator compares the voltage at one of the inputs to a reference voltage and outputs a signal controlling the switching circuit. The switching circuit enables one of the current mirrors, thereby enabling either the TTL or the PECL buffer circuit. In the preferred embodiment, a Schottky diode isolates the TTL buffer circuit from the PECL buffer circuit.

Abstract: A semiconductor device is arranged by a push-pull circuit 1 for shifting a first center potential of an amplitude of an input signal to a second center potential, and for outputting first and seconc complimentary signals P1, P2 having said second center potential, and further a bipolar type differential amplifier 2 for receiving the first and second complementary signals as input signals thereof.

Abstract: A semiconductor integrated circuit memory device has at least two logic blocks, each logic block including at least two logic units and each logic unit having a number of metal oxide semiconductor field effect transistors (MOS FET's) integrated therein. Bipolar transistors for driving the MOS FET's are selectively arranged between the logic blocks and/or the logic units so as to shorten a critical path of a logic block. The memory device may include a word driver circuit having a bipolar transistor connected to MOSFETs in an address decoder and memory cells of the memory device. The memory device may also include a sense circuit having a bipolar transistor for high speed discharge of a bit line, as well as an output buffer including a bipolar transistor for reducing signal transmission delays in driving a bus.

Abstract: A high speed level translator is disclosed in which an ECL differential input signal is applied to a differential input amplifier, amplified, and converted to a single ended intermediate signal. An inverter circuit receives the intermediate signal and outputs a signal indicative of the polarity of the ECL differential input signal. The differential amplifier is biased with a current source which varies the bias current according to fluctuations in the supply voltage such that the operating point of the differential amplifier is automatically adjusted to compensate for variations in the supply voltage. Adjusting the bias current in such a manner allows for a reduction in power dissipation over conventional level translators. Further, since the differential amplifier is configured to provide a single ended intermediate signal, a current mirror is not required to be connected between the differential amplifier and the inverter.

Abstract: In a semiconductor device where a CMOS circuit and a bipolar circuit are mixed, the bipolar circuit is operated between a first power supply voltage and a second power supply voltage, and the CMOS circuit and a level conversion circuit between a CMOS level and a bipolar level are operated between the first power supply voltage and a third power supply voltage. The third power supply voltage is between the first and second power supply voltages.

Abstract: In an input level converter for TTL--CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS--TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

Abstract: The current mode bus driver which is disclosed couples input digital signals to a bus which is normally biased with a voltage difference representing one binary type. The current mode bus driver responds to input digital signals of the other binary type by connecting a current source to one lead of the bus and a current sink to the other lead of the bus, thereby driving the bus to a voltage difference which represents the other binary type. In response to input digital signals of the first-mentioned binary type, the bus driver isolates the current source and current sink from the bus and connects the current source directly to the current sink. The selective switching is performed by n-channel MOSFETs which are driven by the input digital signals through unique buffer driver circuits employing a CMOS inverter, an n-channel MOSFET and an NPN transistor. A combination of MOSFETs and NPN transistors provide a current source and sink that permit operation of the bus at very low voltage levels.

Abstract: A BICMOS input stage includes a level shifting stage (35) and a level converter/buffer circuit (60). The input stage receives a single-ended GTL level input signal and a reference voltage, and in response, provides differential BICMOS level output signals. The input stage operates over a wide range of values for the reference voltage, does not require the generation of complex bias voltages, and provides well controlled output signals.

Abstract: In a system wherein a plurality of semiconductor integrated circuit devices are coexistent and wherein a plurality of supply potential lines are laid, the main power sources of a TTL interface LSI and an ECL interface LSI are shared so as to reduce the number of supply potential lines. Besides, in a case where an LSI, for example, BiCMOS LSI to interface with both the TTL and ECL interface LSI's has a device withstand voltage of about 3 V, it is permitted to interface with both the LSI's across the supply voltage .vertline.5 V.vertline. of the main power source of the TTL interface LSI and the supply voltage .vertline.2 V.vertline. of the power source of the emitter follower portion of the ECL interface LSI because the supply voltages have a difference of 3 V.

Abstract: A novel, high-performance BiCMOS Output Driver. The Output Driver comprises a first pull-up circuit for pulling high the output of the Output Driver and a pull-down circuit for pulling low the output of the Output Driver. The first pull-up means includes a bipolar transistor. Coupled in parallel with the first pull-up circuit is a MOS transistor wherein the gate of the MOS transistor is electrically isolated from the base of the bipolar transistor.