Abstract: An integrated circuit comprises logic circuitry having a plurality of signal paths. A signal path of the plurality of signal paths has a propagation delay greater than a propagation delay of any other signal path of the plurality of signal paths. The signal path includes a plurality of components. The plurality of components is provided with a higher power supply voltage than any other signal path of the plurality of signal paths.

Abstract: A level shift circuit of the invention includes a CMOS inverter circuit that receives an input pulse signal having a crest value of a first potential, a latch circuit that operates on a power supply of a second potential which is higher than the first potential, and a power supply circuit that supplies a power supply of not less than the first potential and less than the second potential to the CMOS inverter circuit. The latch circuit has one end thereof connected to an output end of the CMOS inverter circuit and outputs from the other end thereof an output pulse signal having a crest value of the second potential and a same phase as the input pulse signal. The power supply circuit functions to limit the power supply when the input pulse signal assumes at least the ground level.

Abstract: An integrated circuit is capable of controlling a communication signal by using power ramp controlled communication buffer logic to generate an outgoing communication signal based on a detected voltage on a voltage source. The voltage source is necessary to supply power for power ramp controlled communication buffer logic. The voltage on the voltage source may be detected using power ramp sensor logic. The outgoing communication signal is based on a core logic output signal if the detected voltage is greater than or equal to a predetermined voltage level. If, the detected voltage is less than the predetermined voltage level, the outgoing communication signal is predetermined to be one of: a tristate outgoing communication signal, a logic one outgoing communication signal and a logic zero outgoing communication signal. Power ramp controlled communication buffer logic may also generate a core logic input signal based on an incoming communication signal in response to the detected voltage.

Abstract: A level shifter shifts the level of an input signal from a second voltage domain to a first voltage domain. To accommodate different input signal levels (e.g., including sub-threshold input signal levels) that may arise due to changes in the supply voltage for the second voltage domain, current for a latch circuit of the level shifter is limited based on the supply voltage for the second voltage domain. In this way, a drive circuit of the level shifter that controls the latch circuit based on the input signal is able to initiate a change of state of the latch circuit over a wide range of input signal levels.

Abstract: A dynamic level shifter is disclosed. In one embodiment, a dynamic level shifter circuit may receive an input signal referenced to a first voltage of a first power domain, and may output a corresponding signal referenced to a second voltage into a second power domain. The dynamic level shifter circuit may include an evaluation node that is precharged during a first phase (e.g., the low portion) of a clock signal. During the second phase (e.g., the high portion) of the clock signal, the evaluation node may be either pulled low or high, depending on the state of the input signal. A corresponding output signal, based on the evaluated level on the evaluation node, may be output into the second power domain.

Abstract: Disclosed herein is a semiconductor device that includes: an internal voltage generator configured to produce an internal voltage in a first mode and stop producing the internal voltage in a second mode; a level shifter configured to receive the internal voltage, a first voltage and a first signal, in order to convert the first signal from a voltage level of internal voltage to a voltage level of the first voltage and output the first signal with the voltage level of the first voltage; and a logic circuit configured to produce the first signal, the logic circuit being supplied with the internal voltage in the first mode and supplied with the first voltage in the second mode.

Abstract: An integrated circuit has a level shifter, a pull-circuit, and a voltage regulator. The level shifter and the pull-up circuit receive power from the same supply voltage. The voltage regulator changes the voltage level from the supply voltage to another voltage level used by the level shifter.

Abstract: A level-up shifter circuit is suitable for high speed and low power applications. The circuit dissipates almost no static power, or leakage current, compared to conventional designs and can preserve the signal's duty cycle even at high data rates. This circuit can be used with a wide range of power supplies while maintaining operational integrity.

Abstract: In a level shift circuit allows satisfactory operation with short delay time in the case of low-voltage setting of a low-voltage source, for example, when a state of an input signal IN transitions from a H (VDD) level to a L level, a node W2 precharged to a H (VDD3) level is discharged to ground (VSS) by a discharge circuit N2, and decreases in potential. The decrease in potential propagates to a latch circuit LA, and an output of the latch circuit LA propagates to an output circuit OC. Further, an inversion signal of the node W2 is input to the output circuit OC by bypassing the latch circuit LA. Thus, the output circuit OC starts operating prior to operation based on an output of the latch circuit LA.

Abstract: A high voltage control circuit of a semiconductor device includes an output node control circuit configured to set an initial potential of an output terminal or to discharge the potential of the output terminal, in response to an input signal and a high voltage supply circuit comprising an acceleration unit and a potential control unit coupled in series between the output terminal and a supply terminal for supplying a high voltage. The acceleration unit is operated in response to the potential of the output terminal, and the potential control unit is operated in response to the input signal.

Abstract: A circuit has an input configured to receive a periodic signal having a first value. First circuitry is provided to generate a pulse when said periodic signal has a rising edge and a pulse when said periodic signal has a falling edge. Second circuitry is configured to receive said pulses and responsive thereto to provide an output signal, said output signal having a same duty cycle as said input signal and having a second value.

Abstract: A circuit includes circuit portions operating from separate power supplies which are switched sequentially. An output of a first portion powered by a power supply (A) is provided as an input to a second portion powered by another power supply (B). Power supply (A) is switched-ON a delay interval later than power supply (B). In an embodiment, the first portion also receives a control input which enables or disables response of the first portion to changes in its inputs. An active circuit is connected between the control terminal and a constant reference potential node of the circuit, and has one transistor of a current-mirror pair connected across supplies (A) and (B). The active circuit connects the control terminal to the constant reference potential node in the delay interval, but is an open circuit otherwise. Power dissipation in the circuit is thereby reduced.

Abstract: A level shift circuit of the invention includes a CMOS inverter circuit that receives an input pulse signal having a crest value of a first potential, a latch circuit that operates on a power supply of a second potential which is higher than the first potential, and a power supply circuit that supplies a power supply of not less than the first potential and less than the second potential to the CMOS inverter circuit. The latch circuit has one end thereof connected to an output end of the CMOS inverter circuit and outputs from the other end thereof an output pulse signal having a crest value of the second potential and a same phase as the input pulse signal. The power supply circuit functions to limit the power supply when the input pulse signal assumes at least the ground level.

Abstract: An integrated circuit including a first level shifter configured to receive a first input signal and a first power supply signal, and to output a first output signal. The integrated circuit further includes a first inverter configured to receive the first output signal, and to output a first inverter signal. The integrated circuit further includes a second level shifter configured to receive a second input signal and a second power supply signal, and to output a second output signal, wherein a voltage level of the second power supply signal is different from a voltage level of the first power supply signal. The integrated circuit further includes a second inverter configure to receive the second output signal, and to output a second inverter signal. The integrated circuit further includes an output buffer configured to receive the first inverter signal and the second inverter signal, and to output a buffer output signal.

Abstract: Method and apparatus for voltage level shifters (VLS) design in bulk CMOS technology. A multi-voltage circuit or VLS that operate with different voltage levels and that provides area and power savings for multi-bit implementation of level shifter design. A two-bit VLS to shift bits from a first voltage level logic to a second voltage level logic. The VLS formed with a first N-well in a substrate. The VLS formed with a second N-well in the substrate, adjacent to a side of the first N-well. The VLS formed with a third N-well in the substrate, adjacent to a side of the first N-well and opposite the second N-well. A first one-bit VLS circuit having a portion formed on the first N-well and a portion formed on the second N-well. A second bit VLS circuit having a portion formed on the first N-well and a portion formed on the third N-well.

Abstract: A level shifter includes: an input terminal to which an input voltage is applied; a capacitor; a first transistor provided between the input terminal and one of electrodes of the capacitor, and having a gate electrode connected to the other of the electrodes of the capacitor; a second transistor provided between the input terminal and the other electrode of the capacitor; a signal generating unit which generates a signal for switching the second transistor between conduction and non-conduction and supply the signal to the gate electrode of the second transistor, in a period when the input voltage is provided to the input terminal; and an output terminal for outputting a voltage at the other electrode of the capacitor which is level-shifted by a change in the second transistor to a non-conducting state in the period as an output voltage.

Abstract: In a level shift circuit, input signals are input into gates of a first and a second MOS transistors whose sources are coupled to a first supply voltage VSS. Gates of a third and a fourth MOS transistors whose sources are coupled to a second supply voltage are coupled to drains of the second and the first MOS transistors. A first voltage generation circuit is coupled between the drains of the first and the third MOS transistors, and a second voltage generation circuit is coupled between the drains of the second and the fourth MOS transistors. The gate of the fifth MOS transistor is coupled to a connection node NDB, and the source of the fifth MOS transistor is coupled to the second supply voltage.

Abstract: A semiconductor device includes a clock delay unit configured to delay a source clock by a given delay amount and generate a delayed source clock, a driving signal generation unit configured to decide logic levels of first and second driving signals based on a value of input data, to select one of the source clock and the delayed source clock based on current logic levels of the first and second driving signals, which are detected based on the source clock, and to use a selected clock as a reference of an operation for determining next logic levels of the first and second driving signals, and an output pad driving unit configured to drive a data output pad with a first voltage in response to the first driving signal, and to drive the data output pad with a second voltage in response to the second driving signal.

Abstract: A negative voltage level shifter circuit includes a pair of input transistors, a gate of each input transistor being driven by one of an input signal and an inverted version of the input signal, a cascode sub-circuit coupled to the pair of input transistors, and a pair of cross-coupled transistors for locking a state of the voltage level shifter depending on the input signal, wherein respective gates of the cross-coupled transistors are driven by outputs of respective comparator sub-circuits.

Abstract: A chip includes a receiver circuit that uses a reference voltage to receive a data signal such that a logic level of the received data signal is determined using the reference voltage, and a register to store a value that represents an adjustment to the reference voltage.

Abstract: A signal processing unit with reduced power consumption is provided. A transistor in which a channel is formed in an oxide semiconductor is used for a storage circuit included in the signal processing unit, so that data can be held (stored) even while supply of power is stopped. Non-destructive reading can be performed on the data stored in the storage circuit even when supply of power to the signal processing unit is stopped.

Abstract: A programmable logic device includes a plurality of logic blocks and a plurality of routing networks. One of the plurality of routing networks includes a first selection circuit, a second selection circuit, and an auxiliary power connector circuit. The first selection circuit is connected to the second selection circuit via a signal line. The signal line is connected to a power supply line via the auxiliary power connector circuit.

Abstract: A voltage level shift circuit in which a difference in response characteristic depending on the signal level of an input signal is suppressed. The voltage level shift circuit generates an output signal VOUT having a voltage amplitude different from that of the input signal. An inverter INV2 generates a voltage V1 in the range of VSS to VDDI according to the input signal. An inverter INV3 generates a voltage V2 in the range of VSS to VPERI according to the input signal. An inverter INV4 generates the output signal VOUT according to V1 and V2.

Abstract: Some embodiments provide an integrated circuit (‘IC’) that includes at least first and second circuits operating at a first voltage. The IC includes, between the first and second circuits, a direct connection comprising a third circuit for transmitting a signal from the first circuit to the second circuit at a second voltage that is lower than the first voltage. At least one of the first and second circuits is a configurable circuit for configurably performing operations.

Abstract: A dual supply bidirectional level shifter performs voltage level shifting in two directions, low to high and high to low. A feedback control branch and a control stage inverter are provided that reduce leakage power and allow for low delay time while also allowing for a small circuit footprint.

Abstract: A semiconductor device of the present invention is provided with a terminal for connecting a plurality of buses to the outside of the semiconductor device, a bus interface circuit for treating the plurality of buses as the same bus within the semiconductor device and a controller connected to the bus interface circuit.

Abstract: A level shift circuit is disclosed. The circuit includes a series circuit of a resistor and a switching device connected between a high voltage side power supply voltage in a secondary side voltage system and a low voltage side power supply voltage in a primary side voltage system, a series circuit of a resistor and a switching device connected between the high voltage side power supply voltage in the secondary side voltage system and the low voltage side power supply voltage in the primary side voltage system, and a latch malfunction protecting circuit operated in the secondary side voltage system to have voltages at a connection point of the resistor and the switching device and at a connection point of the resistor and the switching device inputted.

Abstract: A system and method for radiation-tolerant level shifting are disclosed. In some embodiments, an integrated circuit may include a plurality of level shifters, where each of the plurality of level shifters configured receive a same logic level in a first voltage domain and to output candidate logic levels in a second voltage domain, and where at least one of the candidate logic levels subject to being different from another one of the candidate logic levels. The integrated circuit may also include a voting circuit coupled to the plurality of level shifters, where the voting circuit is configured to evaluate the candidate logic levels and output a selected logic level based, at least in part, upon the evaluation.

Abstract: To include a switch transistor inserted between a data bus and an input end of a signal receiving circuit and turned off when a potential of the data bus reaches VPERI?NVth, and an assist transistor that drives the input end of the signal receiving circuit to have VPERI. According to the present invention, because the switch transistor and the assist transistor assist a receiving operation performed by the signal receiving circuit, amplitude of a transferred signal can be reduced without reducing a transfer rate. With this configuration, power consumed by charging or discharging of the data bus can be reduced.

Abstract: One embodiment of the present invention relates to a level shifter circuit having switchable current mirrors that can be selectively activated and deactivated in a complementary manner to translate differential input signals between logic sides (e.g., to translate a differential input signal received at a low-side to a high-side). A latch is connected to outputs of the switchable current mirrors. The latch is configured to receive a translated output signal from an activated current mirror and drive the other output signal to a complementary value. The latch is also configured to provide the translated output signal to a switching element that deactivates (e.g., turns off) the activated switchable current mirror. Storage of the output signals allows for the current mirrors to remain deactivated until a new input signal is provided to the level shifter circuit, thereby allowing for a reduction in the static power consumption of the level shifter.

Abstract: An integrated circuit comprises logic circuitry having a plurality of signal paths. A signal path of the plurality of signal paths has a propagation delay greater than a propagation delay of any other signal path of the plurality of signal paths. The signal path includes a plurality of components. The plurality of components is provided with a higher power supply voltage than any other signal path of the plurality of signal paths.

Abstract: A system and method for radiation-tolerant level shifting are disclosed. In some embodiments, an integrated circuit may include a plurality of level shifters, where each of the plurality of level shifters configured receive a same logic level in a first voltage domain and to output candidate logic levels in a second voltage domain, and where at least one of the candidate logic levels subject to being different from another one of the candidate logic levels. The integrated circuit may also include a voting circuit coupled to the plurality of level shifters, where the voting circuit is configured to evaluate the candidate logic levels and output a selected logic level based, at least in part, upon the evaluation.

Abstract: A level shifting flip-flop for generating a level-shifted output signal based on an input signal includes a master stage and a slave stage. The slave stage has an integrated level shifting circuit. The slave stage level shifts a signal as it passes through the flip-flop, which eliminates the need of level shifting the signal after it is output from the flip-flop.

Abstract: A system having an input and output buffer includes a dynamic driver reference generator to generate dynamic driver reference signals based on a data signal and an IO buffer supply voltage, a level shifter to generate level shifted signals based, in part, on the dynamic driver reference signals, and a driver having at least one stress transistor. The driver dynamically adjusts a voltage across the stress transistor based on at least one of dynamic driver reference signals, the level shifted signals, and a current state of an IO pad.

Abstract: A voltage level shifter for translating a binary input signal representing a binary sequence to a binary output signal representing the same binary sequence. The voltage level shifter comprises an input port for receiving the binary input signal as an input voltage varying between a first input voltage level and a second input voltage level. An output port is connected to a node for outputting the binary output signal as an output voltage varying between a first output voltage level and a second output voltage level. A supply voltage node connectable to a voltage supply, can provide the second output voltage level. A first switch is arranged to couple the supply voltage node to the node and to decouple the supply voltage node from the node based on a voltage at the node. A feedback voltage loop is connected to the node for providing a feedback voltage based on the voltage at the node.

Abstract: A voltage translator circuit includes an input stage adapted for receiving an input signal referenced to a first voltage supply, a first latch circuit adapted for connection with a second voltage supply and operative to at least temporarily store a logic state of the input signal, and a voltage clamp coupled between the input stage and the first latch circuit. The voltage clamp is operative to set a maximum voltage across the input stage to a prescribed level. The voltage translator circuit generates a first output signal at a first output formed at a junction between the first latch circuit and the voltage clamp. A second latch circuit is connected to the first output in a feedback configuration. The second latch circuit is operative to retain a logical state of the first output signal as a function of at least a first control signal supplied to the second latch circuit regardless of a state of the first voltage supply.

Abstract: A voltage level shifter having an internal low voltage power supply (VCCL) and an external high voltage power supply (VCCH) includes a first PMOS transistor and a second PMOS transistor each with a source connected to the VCCH, a gate of the first PMOS transistor being coupled to a drain of the second PMOS transistor, and a gate of the second PMOS transistor being coupled to a drain of the first PMOS transistor. The voltage level shifter further includes a first NMOS transistor with a source connected to a ground (VSS) and a gate connected to a first signal swinging between the VCCL and the VSS, and a first blocking device coupled between the drain of the first PMOS transistor and a drain of the first NMOS transistor, such that the voltage level shifter can operate at a lower VCCL.

Abstract: Method and apparatus for voltage level shifters (VLS) design in bulk CMOS technology. A multi-voltage circuit or VLS that operate with different voltage levels and that provides area and power savings for multi-bit implementation of level shifter design. A two-bit VLS to shift bits from a first voltage level logic to a second voltage level logic. The VLS formed with a first N-well in a substrate. The VLS formed with a second N-well in the substrate, adjacent to a side of the first N-well. The VLS formed with a third N-well in the substrate, adjacent to a side of the first N-well and opposite the second N-well. A first one-bit VLS circuit having a portion formed on the first N-well and a portion formed on the second N-well. A second bit VLS circuit having a portion formed on the first N-well and a portion formed on the third N-well.

Abstract: A semiconductor device includes a first semiconductor chip operating at a first power supply voltage and a second semiconductor chip operating at a second power supply voltage lower than the first power supply voltage to supply the second power supply voltage to the first semiconductor chip. The semiconductor chips according to the present invention are conveniently used for fabrication of the semiconductor device. The first semiconductor chip includes an output circuit including a first transistor and a second transistor, interconnected in series and turned on or off complementarily. The output circuit outputs a signal to a first external output terminal. The first semiconductor chip also includes a third transistor connected in series with the first and second transistors and having a gate electrode connected to a second output terminal.

Abstract: A single-supply digital voltage level shifter has a first inverter having a first input for receiving an input signal with a first voltage swing, and a first output for outputting a first output signal. A second inverter has a second input for receiving the first output signal, and a second output for outputting a second output signal with a second voltage swing, where the second output signal is a level-shifted version of the input signal. A comparison stage includes a first comparison stage input for receiving the input signal, a second comparison stage input for receiving the second output signal, and a comparison stage output for outputting a comparison stage output control signal. A control stage is connected in a circuit branch of the first inverter and has a control stage switch that assumes a non-conducting state dependent on a logical state of the comparison stage output control signal.

Abstract: A design support method for causing a computer using layout data for providing a layout in which macro cells are arranged and in which power supply wirings are formed at certain intervals in each wiring layer to execute, the method including: extracting a set of adjacent macro cells from the layout data; specifying a region located between macro cells that constitute the set of adjacent macro cells extracted in the extracting step from among row regions included in the layout represented by the layout data; detecting a power supply wiring of a specific wiring layer in a projection area located above the region specified in the specifying step, the specific wiring layer being higher than a bottom layer of the layout represented by the layout data; and outputting a region where no power supply wiring of the specific wiring layer is detected in the detecting step.

Abstract: A system and method for providing an accurate current reference using a low-power current source is disclosed. A preferred embodiment comprises a system comprises a first section and a second section. The first section comprises a first simple current reference, an accurate current reference, and a circuit that generates a digital error signal based upon a comparison of an output of the first simple current reference and an output of the accurate current reference. The second section comprises a second simple current reference providing a second reference current, an adjustment circuit providing an adjustment current based upon the digital error signal, and a circuit biased with current equivalent to a summation of the second reference current and the adjustment current. The first simple current reference and the second simple current reference may be equivalent circuits.

Abstract: Level shifter and related apparatus are provided. The level shifter has first to sixth transistors, wherein drains of the first and the second transistors respectively are coupled to drains of the fifth and the sixth transistors as two output nodes of the level shifter, gates of the fifth and the sixth transistors are two input nodes of the level shifter. A source, a drain and a gate of the third transistor are respectively coupled to a gate of the first transistor, the drain of the sixth transistor and a first bias voltage, and a source, a drain and a gate of the fourth transistor are respectively coupled to a gate of the second transistor, the drain of the fifth transistor and a second bias voltage.

Abstract: A level shifter including input and output power nodes, input and output reference nodes, input and output signal nodes, and a lever shifter network. The input power and input reference nodes operate within a first power domain and the output power and output reference nodes operate within a second power domain. The level shifter network receives an input signal operable within the first power domain, performs voltage shifting between the input and output power nodes and between the input and output reference nodes, and provides an output signal output signal indicative of the input signal that operates within the second power domain. The level shifter may include power and/or ground bypass such that either one or both of power and ground voltage shifting may be bypassed for faster switching. The level shifter may include an isolation input to assert the output to a known level.

Abstract: A level shifter converts an input signal having an amplitude between a ground and a first power supply voltage into an output signal having an amplitude between the ground and a second power supply voltage. The level shifter includes an input unit, driven by the first power supply voltage, that raises a first pulse signal at a rise of the input signal and raises a second pulse signal having the same polarity as the first pulse signal at a fall of the input signal, and a level shift unit that converts a signal level of the first pulse signal into an amplitude level of the second power supply voltage, and converts a signal level of the second pulse signal into an amplitude level of the second power supply voltage.

Abstract: A level shifter receives an input voltage signal and produces an output voltage signal. The level shifter includes a first inverter, configured to operate at a potential difference between a first voltage V1 and a second voltage V2. The output from the invert is capacitively coupled to an input of a latch circuit via a capacitor. The capacitor has a first terminal connected to the output terminal of the first inverter, and further has a second terminal. The level shifter has a resistor connected to a third voltage V3 and to the capacitor for tying the input to the latch circuit to a desired voltage. The latch circuit is configured to operate at a potential difference between a fourth voltage V4 and a fifth voltage V5. The latch has an input node connected to the resistor and the capacitor, and further has an output node connected to an output node of the level shifter.

Abstract: A method and circuit for implementing a dual speed level shifter with automatic mode control, and a design structure on which the subject circuit resides are provided. A low speed level shifter and a high speed level shifter are used to provide a wide frequency range of operation. The circuit operates in one of a low speed mode or a high speed mode. The appropriate mode is selected automatically by detecting the frequency of the signal to be level shifted. When the incoming signal is slower than a reference frequency, the low speed level shifter is selected, and when the incoming signal is faster than the reference frequency, the high speed level shifter is selected.

Abstract: A data transfer circuit includes: plural transfer lines transferring data; plural data output units connected to end portions of the respective transfer lines, detecting and outputting data transferred through the transfer lines with drive performance in accordance with a control signal; plural data transmission units arranged in parallel, transferring data to the corresponding transfer lines in response to selection signals; a selection control unit generating selection signals and outputting the selection signals to the corresponding data transmission units; and a control unit generating the control signal for controlling drive performance of the data output units to adjust data transfer delay and outputting the control signal to the respective output units. The transfer lines are arranged in the arrangement direction of the data transmission units and connected to the corresponding data output units. The control unit generates the control signal in accordance with the length of the data transfer distance.

Abstract: A system and method are shown for generation of at least one reference voltage level in a bus system. A reference voltage generator on a current driver includes at least one reference voltage level, at least one control signal, and an active device. The active device is coupled to the at least one control signal, such as a current control signal, and a selected reference voltage of the at least one reference voltage level. The active device is arranged to shift the at least one reference voltage level based on the at least one current control signal such as an equalization signal, a crosstalk signal, or the combination thereof, employed on the current driver.

Abstract: A semiconductor device in which an input terminal is electrically connected to a first terminal of a first transmission gate; a second terminal of the first transmission gate is electrically connected to a first terminal of a first inverter and a second terminal of a functional circuit; a second terminal of the first inverter and a first terminal of the functional circuit are electrically connected to a first terminal of a second transmission gate; a second terminal of the second transmission gate is electrically connected to a first terminal of a second inverter and a second terminal of a clocked inverter; a second terminal of the second inverter and a first terminal of the clocked inverter are electrically connected to an output terminal; and the functional circuit includes a data holding portion between a transistor with small off-state current and a capacitor.