Abstract: A voltage dividing capacitor circuit includes first capacitor through third capacitor dividers and first through fourth load capacitors. The first capacitor divider includes a first flying capacitor and a plurality of first switches connected in series between a first voltage node and a ground node, and is connected to a second voltage node. The second capacitor divider is connected to the first voltage node, the second voltage node, and a first intermediate voltage node. The third capacitor divider is connected to the second voltage node, the ground voltage node, and a second intermediate voltage node. The first through fourth load capacitors are connected in series between the first voltage node and the ground node. The second capacitor divider includes a second flying capacitor and a plurality of second switches connected in series between the first voltage node and the second voltage node.

Abstract: A switching device may include an input terminal, an output terminal, a primary switching transistor electrically coupled between the input terminal and the output terminal, and a cascode arrangement electrically coupled between the primary switching transistor and the input terminal. The cascode arrangement may include multiple cascode transistors, each having gate terminals coupled to nodes of a voltage divider that is coupled between a positive voltage supply and a reference voltage supply. Emitter-follower bipolar junction transistors (BJTs) may be configured to control voltages at the gate terminals of the primary switching transistor and the cascode transistors to accommodate changes in the output voltage at the output terminal.

Abstract: An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.

Abstract: Systems and methods to confirm safe delivery of treatment energy to a patient by identifying a presence of a fault in an energy delivery pathway and identifying a location of the fault within the device. The system includes a processing unit configured to calculate blood impedances external to the device based on known impedance characteristics of the device, and then to calculate impedances within the device during energy delivery based on the calculated blood impedances. The processing unit prevents the delivery of energy in an energy delivery pathway that is determined to be compromised. The processing unit is also configured to compare times for two different frequencies to travel a predetermined distance, the difference in the times corresponding to a location of a fault within the energy delivery pathway.

Abstract: A level shifter includes a converter configured to generate a first driving signal and a second driving signal; a current sensing circuit configured to detect a current corresponding to a voltage change of second power, and generate a freezing signal according to the current; a freezing circuit configured to control an operation of the converter according to the freezing signal.

Abstract: Various implementations described herein are related to a device having a level shifter that receives an input signal and reference voltages and provides level-shifted input signals based on the reference voltages. The device may have a pre-driver that receives the level-shifted input signals and reference voltages and provides gate voltages based on the reference voltages. The device may have a gate stabilizer that receives the reference voltages and provides a stabilized reference voltage based on the reference voltages. The device may have an output driver that receives the reference voltages, receives the gate voltages, receives the stabilized reference voltage and provides an output pad voltage to an input-output pad based on the reference voltages, the gate voltages and the stabilized reference voltage.

Abstract: A digital microphone or other sensor assembly includes a transducer and an electrical circuit including a slew-rate controlled output buffer configured to reduce propagation delay and maintain output rise and fall time independent of PVT variation and load capacitance. In some embodiments, the portions of the output buffer are selectably disabled to reduce power consumption without adversely substantially increasing propagation delay.

Abstract: A control circuit for controlling a data input/output is provided. The control circuit comprises a plurality of control level circuits that include a first control level circuit and a last control level circuit. Each control level circuit has a control element, with a number of control elements of the last control level circuit being greater than a number of control elements of the first control level circuit. Each control element is configured to receive a first control signal and a second control signal, and controls a current for the data input/output depending on the first and second control signals. The control circuit is configured to provide the first control signal to the control elements in a sequence starting at the first control level circuit and ending at the last control level circuit, and then to provide the second control signal to the last control level circuit in reverse order.

Abstract: The present disclosure provides a driving circuit, a driving IC, and a driving system, relating to the technical field of electronic circuits. The driving circuit comprises a control module and a driving signal output module, the control module is electrically connected to the driving signal output module, and the driving signal output module is configured to be electrically connected to a to-be-driven device, wherein the driving signal output module comprises at least two transistors, and the at least two transistors are epitaxially grown on the same substrate; and the control module is configured to control a closed state of the at least two transistors, so as to control an operation state of the to-be-driven device.

Abstract: Techniques and apparatus for driving a transistor gate of a switched-mode power supply (SMPS) circuit. One example gate driver for a switching transistor of an SMPS circuit generally includes a first power supply rail; a reference rail; an output node for coupling to a control input of the switching transistor; a floating supply node; a pulldown transistor having a drain coupled to the output node of the gate driver and having a source coupled to the reference rail; and a pulldown logic buffer having a first power supply input coupled to the floating supply node, having a second power supply input coupled to the reference rail, and having an output coupled to a gate of the pulldown transistor. The floating supply node is configured to selectively receive power from the first power supply rail and the output node of the gate driver.

Abstract: Apparatuses and methods for multi-level communication architectures are disclosed herein. An example apparatus may include a driver circuit configured to convert a plurality of bitstreams into a plurality of multilevel signals. A count of the plurality of bitstreams is greater than count of the plurality of multilevel signals. The driver circuit further configured to drive the plurality of multilevel signals onto a plurality of signal lines using individual drivers. A driver of the individual drivers is configured to drive more than two voltages.

Abstract: An output circuit includes: a first input transistor that is provided between a first power supply line and a first intermediate node; a second input transistor that is provided between a second intermediate node and a second power supply line; a first cascode transistor that is provided between the first intermediate node and an output node, and receives a first clip voltage from a first voltage generation circuit; a second cascode transistor that is provided between the output node and the second intermediate node, and receives a second clip voltage from a second voltage generation circuit; a first switch transistor that is provided between the first intermediate node and a gate of the first cascode transistor, and turns on during power down; and a second switch transistor that is provided between the second intermediate node and a gate of the second cascode transistor, and turns on during power down.

Abstract: Improved devices, circuits and methods of operation in implantable stimulus systems. An implantable defibrillator may comprise a charging circuit using a transformer to store and build up energy on an HV capacitor or capacitor stack, with the HV capacitor in turn coupled to an H-bridge output circuit having low and high sides for issuing therapy. In the output current path, a current controlling circuitry is placed between the H-bridge and ground, allowing the greater flexibility in the selection of switching devices, and drivers for such devices, in the H-bridge circuit and/or enabling circuits between the H-bridge and the HV capacitor or other therapy circuit.

Abstract: Memory including an array of memory cells might include an input buffer having calibration circuitry, a first input, a second input, and an output; and calibration logic having an input selectively connected to the output of the input buffer and comprising an output connected to the calibration circuitry, wherein the calibration logic is configured to cause the memory to determine whether the input buffer exhibits offset while a particular voltage level is applied to the first and second inputs of the input buffer, and, in response to determining that the selected input buffer exhibits offset, apply an adjustment to the calibration circuitry while the particular voltage level is applied to the first and second inputs until a logic level of the output of the selected input buffer transitions.

Abstract: Improved devices, circuits and methods of operation in implantable stimulus systems. An implantable defibrillator may comprise an H-bridge output circuit having low and high sides, with a current controlling circuit coupled to the high side of the H-bridge output circuit and a current monitoring circuit coupled to the low side of the H-bridge output circuit. A bootstrap design or a DC isolating circuit or circuit element may be used in the current controlling circuit.

Abstract: A transmitter is provided. the transmitter includes a hybrid feedback circuit and a hybrid driving circuit. The hybrid feedback circuit compares a reference voltage with a feedback voltage in closed-loop, determines whether to perform polarity reversal according to a mode control signal, controls power output according to a comparison result and the mode control signal, and generates a first output signal. The hybrid driving circuit, coupled to the hybrid feedback circuit, receives the first output signal of the hybrid feedback circuit, generates a transmitter output signal according to an input data, and generates a second output signal according to the transmitter output signal. The first output signal and the second output signal are transmitted back to the hybrid feedback circuit.

Abstract: A low dropout (LDO) voltage regulator includes a first LDO stage that receives a first supply voltage and is active during a first time interval and a second LDO stage that receives a second supply voltage and is active during a second time interval. An operational amplifier receives a feedback voltage based on the LDO output voltage and provides an amplified feedback signal to the first and second LDO stages. A compensation capacitor is selectively coupled between the operational amplifier and either the first or the second LDO stage. A current limit circuit includes a sense FET coupled to the LDO pass FET, a drain voltage replication circuit coupled between the pass FET and sense FET to provide a sense current is indicative of load current when the pass FET is in a linear region, and a current comparator to compare the sense current to a predetermined current level.

Abstract: A circuit includes a high-side switch and a low-side switch. A first inverter includes first and second discharge current paths activatable to sink first and second discharge currents, respectively, from the control terminal of the high-side switch. A second inverter includes first and second charge current paths activatable to source first and second charge currents to the control terminal of the low-side switch. A high-side sensing current path includes an intermediate high-side control node, and a low-side sensing current path includes an intermediate low-side control node. The second discharge current path is selectively enablable in response to a high-side detection signal at the intermediate high-side control node having a high logic value, and the second charge current path is selectively enablable in response to a low-side detection signal at the intermediate low-side control node having a low logic value.

Abstract: An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.

Abstract: A control circuit for a boost converter can include: a comparison circuit configured to compare an input voltage of the boost converter against an output voltage of the boost converter, and to generate first and second control signals; an option circuit configured to provide a third control signal generated by a drive circuit of the boost converter to a control terminal of a synchronous power transistor of the boost converter, in accordance with the first and second control signals, when the output voltage is greater than the input voltage; and the option circuit being configured to provide a DC voltage to the control terminal of the synchronous power transistor, in accordance with the first and second control signals, in order to provide a current path for an inductor current of the boost converter through the synchronous power transistor, when the output voltage is not greater than the input voltage.

Abstract: According to one embodiment, a drive control circuit includes a first transistor that supplies a current to a gate of an output transistor in response to a drive signal, a second transistor that supplies a current to a capacitor in response to the drive signal, a comparison circuit that compares a gate voltage of the output transistor and a voltage of the capacitor, a control signal generation circuit that generates a control signal in response to an output signal of the comparison circuit and the drive signal, and a third transistor that supplies a current to a gate of the output transistor in response to the control signal.

Abstract: A piece-wise linear (PWL) waveform generator includes a current generator that generates a reference current, an output capacitor across which an output voltage is developed to form a PWL waveform, charging and discharging current sources for charging/discharging the output capacitor based on the reference current, a clock-controlled switch network for controlling the charging/discharging of the output capacitor, and a feedback control loop that senses the output voltage and controls the current generator to vary the reference current based on the output voltage. A first switch controlled by a first clock signal periodically connects/disconnects a current source output to/from a load impedance and a second switch controlled by a second clock signal periodically connects/disconnects a capacitor to/from the current source while disconnected from the load impedance.

Abstract: A device may include a current source configured to couple a charged node to a ground voltage to generate a current. The device may include a second circuit coupled to the node and configured to compare, beginning during a first clock cycle of a clock signal and for each clock cycle of a number of clock cycles of the clock signal, the voltage at the node to a reference voltage to generate a result. The device may further include a control unit configured to: detect, upon completion of a subsequent clock cycle of the clock signal, a change in the result; determine, in response to the change in the result, a transition time based on a number of elapsed clock cycles from the first clock cycle to completion of the subsequent clock cycle; and determine a capacitance of the node based on the transition time. Related systems and methods are also described.

Abstract: The disclosed technology relates to a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to supply a stable voltage to an emitter of the IGBT with respect to the ground for a gate of the IGBT.

Abstract: A shift register unit, a gate driving circuit, a display device and a driving method are disclosed. The shift register unit includes an input circuit, a first node reset circuit, an output circuit and a first reset control circuit. The input circuit is configured to provide an input signal to a first node; the first node reset circuit is configured to reset the first node under control of a level of a reset control node; the output circuit is configured to output an output signal at the output terminal under control of a level of the first node; and the first reset control circuit is configured to control the level of the reset control node in response to a reset control signal.

Abstract: A drive circuit of a liquid ejecting device includes a first switch, a second switch, and a signal processing circuit. The first switch is connected between a first potential and an output terminal through which a drive signal is transmitted to an actuator of a liquid ejecting device. The second switch is connected between the output terminal and a second potential lower than the first potential. The signal processing circuit is configured to detect a difference between a waveform of a target drive signal and the drive signal waveform output at the output terminal, and to cause the first switch and the second switch to be off when an absolute value of the difference is less than a threshold value.

Abstract: A circuit with a first transistor includes a first current electrode coupled to a first voltage supply, a second current electrode coupled to a first circuit node, and a gate electrode coupled to receive a first input signal. A second transistor includes a first current electrode coupled to the second current electrode of the first transistor, a second current electrode, and a gate electrode coupled to receive a first bias voltage. A third transistor includes a first current electrode coupled to the second current electrode of the second transistor, a second current electrode coupled to a second circuit node, and a gate electrode. A fourth transistor includes a first current electrode coupled to the second circuit node, a second current electrode coupled to a third circuit node, and a gate electrode coupled to receive a second bias voltage. The gate electrode of the third transistor is coupled to the third circuit node.

Abstract: A bus driver for driving a differential data bus can be in a dominant data bus state and in a recessive data bus state. In the dominant data bus state, the bus driver connects the first and second single-wire data bus lines to a first and second electrical potential and temporarily does not drive the first and second single-wire data bus lines in the recessive data bus state. In the recessive data bus state after a change from the dominant data bus state to the recessive data bus state, bus driver connects the first and second single-wire data bus lines to a fourth electrical potential for an active time.

Abstract: A memory interface may include a transmitter that generates multi-level signals made up of symbols that convey multiple bits of data. The transmitter may include a first data path for a first bit (e.g., a least significant bit (LSB)) in a symbol and a second data path for a second bit (e.g., the most significant bit (MSB)) in the symbol. Each path may include a de-emphasis or pre-emphasis buffer circuit that inverts and delays signals received at the de-emphasis or pre-emphasis buffer circuit. The delayed and inverted data signals may control de-emphasis or pre-emphasis drivers that are configured to apply de-emphasis or pre-emphasis to a multi-level signal.

Abstract: An output circuit receives a data signal biased within a first voltage range associated with a first power supply voltage and generates an output signal on an output node biased within a second voltage range in response to the data signal, the second voltage range is associated with a second power supply voltage greater than the first power supply voltage. The output circuit generates pull-up and pull-down signals that are within the first voltage range in response to the data signal. The output circuit includes an output driver circuit including a pull-up circuit and a pull-down circuit. The pull-up circuit, when activated, generates the output signal indicative of the second power supply voltage in response to a modified pull-up signal being the pull-up signal level-shifted to a third voltage range. The pull-down circuit, when activated, generates the output signal being the ground potential in response to the pull-down signal.

Abstract: The present invention provides a circuit including an output buffer, a tracking circuit and a pre-driver, where the output buffer includes at least one P-type transistor and at least one N-type transistor, the at least one P-type transistor is coupled between a supply voltage and a pad, and the at least one N-type transistor is coupled between a ground voltage and the pad. In the operations of the circuit, the tracking circuit is configured to generate a tracking signal control signal according to a voltage level at the pad, and the pre-driver is configured to generate a control signal to control the at least one P-type transistor or the at least one N-type transistor according to the tracking signal.

Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

Abstract: A gate driver with reduced voltage fluctuations driving a display device generates pulse signals shifted in a specified phase. The gate driver includes connected unit circuits. Each unit circuit includes an output terminal, input and output transistors, and a holding module. First and second control signals, alternating oppositely between high and low states, govern the two transistors. The input transistor is controlled by a first control signal and outputs a high level voltage to a first node based on a trigger signal. The output transistor outputs the shifted pulse signal synchronously with a clock control signal, based on the high level voltage of the first node. Initially, the trigger signal is low and the first and second control signals are high. The holding module outputs the low level voltage to the output terminal based on the first control signal and the second control signal.

Abstract: A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. The transistor cells may form, in the body zones, inversion channels when a first control signal exceeds a first threshold. The inversion channels form part of a connection between the drift structure and a first load electrode. A delay unit generates a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal. The enhancement cells form inversion layers in the drift structure when the second control signal falls below a second threshold lower than the first threshold. The inversion layers are effective as minority charge carrier emitters.

Abstract: A semiconductor device includes a first integrated chip; a second integrated chip; a plurality of reference through-chip vias formed through the first and second integrated circuit chips; and at least a normal through-chip via formed through the first and second integrated circuit chips, wherein the first integrated circuit chip comprises: a plurality of reference sourcing circuits suitable for sourcing a reference current to the respective reference through-chip vias; and at least a sourcing circuit suitable for sourcing the reference current to the normal through-chip via, and wherein the second integrated circuit chip comprises: a plurality of reference sinking circuits suitable for sinking currents flowing through the respective reference through-chip vias; a line suitable for electrically coupling the plurality of reference through-chip vias; a comparison voltage generation circuit suitable for generating a plurality of comparison voltages based on a voltage of the line; at least a sinking circuit suitab

Abstract: Certain aspects of the present disclosure generally relate to methods and apparatus for powering up a charge pump converter and providing protection and soft-start circuitry therefor. One example charge pump converter generally includes a first transistor and a second transistor coupled in series between an input voltage node and an output voltage node of the charge pump converter, a first capacitive element having a first terminal coupled to a node between the first and second transistors, and a first switch coupled to the input voltage node, the first switch being configured to selectively enable a first drive circuit having an output coupled to a control terminal of the second transistor.

Abstract: A hybrid output driver is disclosed that supports high-voltage signaling and low-voltage signaling. The high-voltage signaling is powered by a high-power supply voltage that is greater than a low-power supply voltage that powers the low-voltage signaling.

Abstract: Example embodiments of the present disclosure relate to a line driver apparatus. In some example embodiments, an apparatus is provided. The apparatus includes a capacitive feed-through module and a driving module. The capacitive feed-through module includes a first pre-driver operable to receive input differential signals and delayed signals of the input differential signals, generate first drive signals from the input differential signals and the delayed signals, and equalize the first drive signals. The capacitive feed-through module also includes a capacitance reducing module arranged between the first pre-driver and transmission lines and operable to reduce parasitic capacitance at the transmission lines in response to the first drive signals. The driving module is coupled to the transmission lines and operable to generate output differential signals from the input differential signals for transmission on the transmission lines.

Abstract: A transmitter of the present disclosure includes: an output terminal; a driver that performs transition of a voltage of the output terminal among a plurality of voltages; and a controller that controls the driver to cause transition start timing in one voltage transition in voltage transition among the plurality of voltages to be later than transition start timing in another voltage transition.

Abstract: A circuit or associated system or method comprises a first driver including a first transistor bank and a first resistor connected in series between a first predetermined voltage and an output pad, the first transistor bank including a first driver transistor and a plurality of first calibration transistors, wherein the plurality of first calibration transistors are respectively controlled based on a combination of bits of a first calibration code and on an output of at least one first logic gate.

Abstract: A hybrid output driver is disclosed that supports high-voltage signaling and low-voltage signaling. The high-voltage signaling is powered by a high-power supply voltage that is greater than a low-power supply voltage that powers the low-voltage signaling.

Abstract: An input signal is split onto a first data path and a second data path. Values of the input signal above a threshold voltage level are propagated on the second data path and not on the first data path. The propagation of the signal from the input signal terminal through the first data path or the second data path is selectively controlled using two reference bias voltages generated based on a level of the signal.

Abstract: A bridge output circuit includes: a voltage-controlled first transistor provided between a first power supply terminal and an output terminal; a voltage-controlled second transistor provided between the output terminal and a second power supply terminal having a potential lower than the potential of the first power supply terminal; a first OFF detection circuit detecting whether the first transistor is in an OFF state based on a gate voltage of the first transistor; a second OFF detection circuit detecting whether the second transistor is in an OFF state based on a gate voltage of the second transistor; and an output control circuit performing a first source transition operation of turning off the second transistor and then turning on the first transistor, and then performing a second source transition operation of turning off the first transistor and then turning on the second transistor.

Abstract: Implementations described herein relate to circuits and techniques increasing transmitter output speed. In some implementations, a circuit is described using a pull-up data path comprising a first flying capacitor, a first buffer, a thin-oxide PMOS device, and a thick-oxide PMOS device, a pull-down data path comprising a second flying capacitor, a second buffer, a thin-oxide NMOS device, and a thick-oxide NMOS device, wherein the pull-up data path and the pull-down data path are operatively connected to a core data output signal line.

Abstract: A sensing circuit and a touch sensor including the same are disclosed. The sensing circuit includes a current provider configured to provide a first current between a first power source and a first node and a second current between the first node and a second power source, a bias unit configured to output first and second outputs to first and second output nodes, and a current-to-voltage converter configured to mirror the first and second currents and to output a sensing voltage. The bias unit includes a differential amplifier, first and second output transistors, and a current mirror. A first input terminal of the differential amplifier receives a reference voltage and a second input terminal of the differential amplifier is connected to a second node corresponding to a connection node of the first and second output transistors.

Abstract: A circuit includes a first power transistor including a first control input and first and second current terminals. The circuit includes a second power transistor including a second control input and third and fourth current terminals. Third current terminal couples to the first current terminal, and the fourth current terminal couples to the second current terminal at an output node. An error amplifier generates an error signal based on a difference between a reference voltage and an output voltage on the output node. An adaptive buffer couples to an output of the error amplifier and couples to the first and second control inputs. The adaptive buffer causes the first power transistor to be on through a range of output current and to cause the second power transistor to be on through some, but not all, of the range of output current.

Abstract: An apparatus is provided which comprises: a first inverter to receive a clock; a pass-gate coupled to the first inverter; a second inverter coupled to the pass-gate and to provide an output clock; and a device coupled to the second inverter and the pass-gate, wherein the transistor and the pass-gate are controllable by a logic that depends on logic values of at least two signals (e.g., an enable and the clock).

Abstract: Apparatuses and methods for power regulation based on input power using circuitry are disclosed herein. An example apparatus may include a reference circuit configured to receive a first voltage and a second voltage and to provide an output reference voltage at an output node having a value equal to the second voltage subtracted from the first voltage. The reference circuit may be configured to mirror a current of a first circuit coupled between the second voltage and a reference voltage through a second circuit coupled between the first voltage and the output node. The example apparatus may further include a power circuit configured to provide a third voltage based on the output reference voltage. The third voltage may have a value that is equal to the output reference voltage.

Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

Abstract: Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.