Abstract: Techniques are described for implementing diodes with low threshold voltages and high breakdown voltages. Some embodiments further implement diode devices with programmable threshold voltages. For example, embodiments can couples a native device with one or more low-threshold, diode-connected devices. The coupling is such that the low-threshold device provides a low threshold voltage while being protected from breakdown by the native device, effectively manifesting as a high breakdown voltage. Some implementations include selectable branches by which the native device is programmably coupled with any of multiple low-threshold, diode-connected devices.

Abstract: In one example embodiment, a circuit includes a first sub-circuit configured to generate first data corresponding to a frequency and a duration of overloading of a transistor in the inverter, and a second sub-circuit configured to generate second data corresponding to a rate of rise of a voltage and a peak voltage value of the transistor in the inverter. The first sub-circuit and the second sub-circuit are configured to respectively provide the first data and second data as outputs to a controller for analyzing a manner in which a load coupled to the inverter is driven.

Abstract: A battery charging system for charging a battery of a portable device includes: a power supplier, generating a power supplier output voltage and a power supplier output current; and a charging circuit, dynamically updating an over-voltage protection threshold and/or an over-current protection threshold based on a charging current, a battery cell charging voltage and an equivalent impedance of a charge path. The power supplier output current and/or the over-voltage protection threshold and/or the over-current protection threshold are time-varying during the battery is charged. The power supplier performs over-voltage protection and/or over-current protection based on the over-voltage protection threshold and/or the over-current protection threshold from the charging circuit.

Abstract: An electronic device includes a wide bandgap thyristor having an anode, a cathode, and a gate terminal, and a wide bandgap bipolar transistor having a base, a collector, and an emitter terminal. The emitter terminal of the bipolar transistor is directly coupled to the anode terminal of the thyristor such that the bipolar transistor and the thyristor are connected in series. The bipolar transistor and the thyristor define a wide bandgap bipolar power switching device that is configured to switch between a nonconducting state and a conducting state that allows current flow between a first main terminal corresponding to the collector terminal of the bipolar transistor and a second main terminal corresponding to the cathode terminal of the thyristor responsive to application of a first control signal to the base terminal of the bipolar transistor and responsive to application of a second control signal to the gate terminal of the thyristor. Related control circuits are also discussed.

Abstract: A high voltage switch in which an extended SCR is built in an insulated polysilicon layer for providing a single structure high voltage switch. The high voltage SCR is built by building unit SCRs comprising a cathode, a gate, an anode and a voltage sustaining area. The unit SCRs are built as horizontal linear devices. The unit SCRs can then be combined to form a large SCR by building each unit SCR so that the anode of one SCR is at least partially contiguous with the cathode of the next unit SCR.