Abstract: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor.

Abstract: A motion detector, in particular suitable for animals, comprising at least one motion element, wherein an element movable within a predetermined area is located, which brings about an electrical connection in at least one position, wherein the movable element is a magnetic element, which can move along a path of travel formed by a cavity in the motion element, and wherein, near the path of travel, at least one magnetically sensitive switching element is placed, which can be influenced by the magnetic element.

Abstract: An input device for a multiplex control signal is applied to provide one or more input position(s) for a user, where each input position generates a plurality of control signals corresponding to a plurality of input states, and an output control unit determines the output of the control signals from each the same input position according a time parameter.

Abstract: A semiconductor sensing device for sensing presence, absence or level of species-of-interest in the environment is disclosed. The semiconductor sensing device comprises at least one layer of molecules deposited thereon. The molecules are electrically-responsive to the species-of-interest in a manner such that when the molecules interact with the species-of-interest, a reverse breakdown voltage characterizing the semiconductor sensing device is modified.

Abstract: The disclosure includes a latch structure and self-adjusting pulse generator using the latch. In an embodiment, the system includes a first latch and a pulse generator coupled to provide a timing signal to the first latch. The pulse generator includes a second latch that has characteristics matching the first latch.

Abstract: A system and method for extending the operating life of a device susceptible to defects caused by total ionizing dose radiation and/or bias dependent degradation are described. The device is replicated at least once and at least one switching mechanism is used to cycle between the devices such that only one device is operating normally. While the first device is operating normally, the other devices are biased. The bias condition may slow, eliminate, or even reverse device shifts that occur due to total ionizing dose radiation or bias effects.

Abstract: An electronic system includes an integrated circuit, powered by a first voltage, with a first device provided therein; a detection device coupled to the first device to detect an output deviation of the first device attributed to process, voltage and temperature (PVT) effects; and a compensation device coupled to the detection device, adjusting the first voltage in response to the output deviation and outputting the first voltage to the integrated circuit to compensate for the PVT effects. The electronic system further comprises a conversion device, coupled between the detection device and the compensation device, to generate an indication signal corresponding to the output deviation for the compensation device to adjust the first voltage. In addition, the compensation device may compare and amplify a difference between a voltage level of the indication signal and a reference to linearly adjust the first voltage for compensating for the PVT effects.

Abstract: Disclosed is a semiconductor integrated circuit which includes a pre-charge capacitor connected to a check node pre-charged. A sense capacitor is configured to discharge the check node. A detector is configured to detect whether the sense capacitor is exposed, based upon a voltage of the check node after a predetermined length of time has elapses.

Abstract: A system comprising a circuit board and an integrated circuit device mounted on the circuit board by means of an external contact, and comprising an anti-tamper device being connectable to the external contact to switch the integrated circuit device into a safe mode upon application of a predetermined electrical state at the external contact is described.

Abstract: Activation of an external sensor coupled to an electronic device will change the frequency of a low power oscillator in the electronic device that runs during a low power sleep mode of the electronic device. When a change in frequency of the low power oscillator is detected, the electronic device will wake-up from the low power sleep mode. In addition, when a change in frequency from an external frequency source is detected, the electronic device will wake-up from the low power sleep mode.

Abstract: Activation of an external sensor coupled to an electronic device will change the frequency of a low power oscillator in the electronic device that runs during a low power sleep mode of the electronic device. When a change in frequency of the low power oscillator is detected, the electronic device will wake-up from the low power sleep mode. In addition, when a change in frequency from an external frequency source is detected, the electronic device will wake-up from the low power sleep mode.

Abstract: An apparatus, system, and method are disclosed for modifying memory device timing and voltage. A detection module detects a change of memory device stress. A timing modification module modifies the memory device timing in response to the change of the memory device stress. In addition, a voltage modification module modifies the memory device voltage in response to the change of the memory device stress. In one embodiment, a processor pause module pauses the operation of a processor module while the timing modification module modifies the memory device timing and the voltage modification module modifies the memory device voltage.

Abstract: A compensating quantity-providing circuit includes a frequency signal generator having an output for a frequency signal the frequency of which depends on mechanical stress in a circuit, and a compensating quantity provider having an input for the frequency signal and an output for a compensating quantity which is based on the frequency signal.

Abstract: A semiconductor integrated circuit includes a first external terminal for receiving a voltage converted by a resistance portion from a current varying in response to an extrinsic factor, a second external terminal for externally outputting the voltage received at the first external terminal as a detection signal, a control circuit outputting a control signal for changing a resistance value of the resistance portion based on the voltage received at the first external terminal, and a third external terminal for outputting the control signal to the resistance portion.

Abstract: A semiconductor physical quantity sensing device to perform electrical trimming at low cost by using a CMOS manufacturing process and a small number of terminals. The semiconductor physical quantity sensing device includes a wheatstone bridge circuit, which is a sensor element, an auxiliary memory circuit, which stores provisional trimming data, a main memory circuit, which stores finalized trimming data, an adjusting circuit, which adjusts the output characteristics of the sensor element based on trimming data stored in the auxiliary memory circuit or the main memory circuit, with the elements and circuits being only configured of active elements and passive elements manufactured by way of the CMOS manufacturing process formed on a same semiconductor chip.

Abstract: A rectifying charge storage device, consisting of a rectifier and capacitor which share common elements, includes a sensor responsive to a monitored parameter such as pressure or the presence of a target chemical agent, to produce a variable and detectable electronic signal representative of the monitored parameter.

Abstract: A clock down sensor mainly comprises a converter and a low-pass filter. The converter is used to convert an input signal from a PECL (Positive Emitter Coupling Logic) signal to a TTL (Transistor Transistor Logic) signal, the low pass filter is used to obtain a DC (Direct Current) level of the TTL signal. Thereby, the sensor can judge whether the clock signal is terminated according to the potential of the output signal in order to emit a warning so that a breakdown elimination inquiry can be done or automatic breakdown elimination can be processed earlier.

Abstract: An apparatus and method for a sensing circuit for cancelling an offset voltage. Specifically, in one embodiment, a CMOS inverter amplifier amplifies an input signal present at an input node. A resistive feedback circuit is coupled to the CMOS inverter amplifier for cancelling an offset voltage that is associated with the CMOS inverter amplifier. This is accomplished by biasing the CMOS inverter amplifier to its threshold voltage. A bias circuit is coupled to the resistive feedback circuit for biasing MOSFET transistors in the resistive feedback circuit at a subthreshold conduction region. As such, the resistive feedback circuit presents a high impedance to the input node. A clamping circuit, coupled to the resistive feedback circuit, maintains operation of the transistors in the resistive feedback circuit in the subthreshold conduction region.

Abstract: A circuit device that make use of graded ferroelectric structures and techniques by which such structures can be excited by external and internal stimuli to render the device useful for a variety of circuit applications. The device comprises at least two ferroelectric films, each of the films having a graded dipole moment in a thickness direction normal to the surfaces thereof. The graded dipole moment of each film is effective to produce a change in the dipole charge density, and hence an apparent net charge, on the first and second surfaces of each film when an alternating electric field is applied to the film and additional energy is imparted to the film. By providing an electrical connection between the films, changes in the dipole charge density of the films generated by application of the alternating electric field yield a device charge separation output that differs from the individual changes in the dipole charge density of the films.

Abstract: A hardening system includes a data storage device having a data input, a clock input, a data node Q, and a data complement node QN. The data storage device provides drive to the data node Q and the data complement node QN. A hardening circuit includes first, second, third, fourth, and fifth transistor circuits. The first and second transistor circuits form a first node therebetween, and the first transistor circuit prevents the data node Q from changing states in the presence of radiation. The third and fourth transistor circuits form a second node therebetween, and the third transistor circuit prevents the data complement node QN from changing states in the presence of radiation. The first node is coupled to the third transistor circuit, and the second node is coupled to the first transistor circuit. The fifth transistor circuit prevents the first and second nodes from floating.

Abstract: A trimming circuit includes a signal separation circuit for separating an input signal into a clock signal, a reset signal, a data signal, and a memory writing voltage signal in accordance with voltage levels. The memory circuit in the trimming voltage control circuit has at least first and second different error correction circuits. The first error correction circuit has a higher error correction capability but lower input-per-output bit efficiency than the second error correction circuit to correct important data such as a highest bit inputted to a D/A converter. The second error correction circuit such as SEC has a higher input-per-output bit efficiency than the first error correction circuit to correct data with an error correction code. The lowest or second lowest input bits are directly supplied to the D/A converter without error correction.

Abstract: Majority voting between triple redundant integrated circuits is used in order to provide an SEU hardened output signal. Accordingly, an input signal is processed in a predetermined manner to provide a first signal, the input signal is processed in the same manner to provide a second signal, and the input signal is also processed in the same manner to provide a third signal. A majority vote is taken between the first, second, and third signals by an SEU immune majority voter circuit, and an output signal is provided corresponding to the majority vote.

Abstract: An electronically commutated external rotor motor has an external rotor having a cup-shaped housing and a radially magnetized permanent magnet connected in the cup-shaped housing. An interior stator is positioned in the cup-shaped housing. The interior stator has a laminated core having grooves. Windings are provided within the grooves. The windings have first end turns proximal to a bottom of the cup-shaped housing and second end turns positioned distal to the bottom. The first and second end turns electrically connect the windings to one another. The permanent magnet has an end face remote from the bottom of the cup-shaped housing. At least one galvano-magnetic rotor position sensor is arranged opposite the end face of the permanent magnet so as to be located within a magnetic leakage of the permanent magnet and within a magnetic leakage of the interior stator. The at least one rotor position sensor is designed to control current within at least a portion of the windings.

Abstract: Between a reference voltage point and the emitter or the source of a transistor of which the collector or the drain is connected to a power source and to which an signal is input at its base or its gate, DC current passing means for causing a current to flow from the emitter or the source to the reference voltage point and a capacitor connected to the reference voltage point at one end and charged with a voltage generated in the DC current passing means are provided. A detection output for the signal is obtained from the emitter or the source of the transistor, or the other end of the capacitor.

Abstract: A monitor within an integrated circuit is disclosed for providing a signal which is proportional to an integrated circuits operating environment. A differential gain cell within the integrated circuit is biased with a bias circuit. A first environment sensitive circuit provides a signal to the first input of the differential gain cell and a second environment sensitive circuit provides a signal with a known relationship to the first environment sensitive signal to the second input of the differential gain cell. The signal produced by the second environment sensitive circuit has a known operational relationship with the signal produced by the first environment sensitive circuit such that changes in the integrated circuit operating environment produce a deviation between the two signals. The differential gain cell in response to the signal received on its first input and second input produces a signal which is responsive to the operating environment of the integrated circuit.

Abstract: A power control circuit and corresponding technique for controlling the reduction or augmentation of operating frequency and/or supply voltage utilized by an electronic device. Such control is based on the operating environment of the hardware product employing the electronic device by determining whether the hardware product is interconnected to an external source having at least one enhanced cooling mechanism. As a result, the hardware product is able to operate at full frequency and voltage during certain situations and to operate at a reduced frequency and/or voltage during other situations.

Abstract: The present invention comprises a noise insensitive current source circuit having a high power supply rejection ratio. The circuit of the present invention is for use with noise sensitive circuits. The circuit of the present invention includes a first reference current source, a second reference current source, and a first, second, third, and fourth transistor. The first transistor has a drain coupled to a power supply and a source coupled to a ground via the first reference current. The second transistor has a drain coupled to the power supply and a source coupled to ground via the second reference current source. The gate of the second transistor is coupled to the gate of the first transistor and to the source of the first transistor. A third transistor has a drain coupled to the power supply and a source coupled to ground via the second reference current source. The gate of the third transistor is coupled to the source of the second transistor.

Abstract: An electrical network creates a differential voltage signal and comprises a plurality of first impedance elements of substantially equal values which are connected to form an impedance bridge. The impedance of at least one of the first impedance elements changes in response to at least one selected external condition to which the first impedance elements are exposed. The network also comprises a second impedance element which has two nodes. The second impedance element is connected at these nodes between a first pair of the first impedance elements. The differential voltages are measured between these nodes and between another node or nodes with magnitudes and signs being dependent upon the change in the impedance of the first impedance elements.

Abstract: A differential load amplifier for receiving two measurement currents from a differential piezoelectric sensor and outputting a voltage proportional to a useful signal measured by the sensor. The differential load amplifier includes a subtraction device for determining a difference signal between the two measurement currents received from the sensor, and an integration device including and an integration capacitor for integrating the difference signal determined by the subtraction device. The subtraction device includes a negative immitance impedance converter, and the integration device includes an operational amplifier connected as an integrator. The subtraction and integration devices may also be implemented by a differential current amplifier and an integration capacitor, respectively.

Abstract: The present invention is a charge amplifier that directly produces a low impedance voltage output proportional to the charge at its input. The invention consists of an operational amplifier, an input capacitor, a feedback capacitor and a feedback resistor in a parallel configuration. The change amplifier of the present invention can be said to be a differentiator followed by an integrator so that the "noisy" differentiation process precedes the integration and, thus the integration produces less signal degradation.

Abstract: A sensor apparatus is capable of removing RF noise. The sensor apparatus is comprised of a first power supply line connected to a power supply terminal; a second power supply line separately branched from the first power supply line and connected thereto; an output line; and a sensor circuit unit connected to the first power supply line so as to receive power therefrom, and for detecting a condition of an article under measurement to output a detection signal to the output line. In this sensor apparatus, the sensor circuit unit includes an operational amplifier operated by accepting the power supplied from the second power supply line, which performs the detection operation; a first filter circuit is connected to the first power supply line defined from a branch point between the first power supply line and the second power supply line to the first power supply line; a second filter circuit is connected to the second power supply line; and a third filter circuit is connected to the output line.

Abstract: An amplifier circuit for amplifying a change in a resistance value of a magnetic resistance element is formed by connecting a first and a second current mirror circuits having the same structure in cascode, so that a voltage change is amplified without using a capacitive coupling. Hence, a high-pass filter is not created as a parasitic circuit, whereby a gain is maintained high in the low frequency region and a low frequency characteristic is excellent. Further, since control electrodes of transistors which form each current mirror circuit are grounded through the capacitance, a noise is reduced without using a conventional feedback circuit. This eliminates an influence of the feedback circuit over a high frequency characteristic, and therefore, a high frequency characteristic becomes excellent.

Abstract: A transmitter in a process control system includes isolation circuitry which isolates transmitter electronics from a sensor bridge circuit. The isolation circuitry includes high impedance isolators in series with high impedance buffers to electronically isolate the transmitter electronics from the bridge. A power supply is isolated using a series of capacitors connected to a periodic signal.

Abstract: A circuit for sensing a parameter, such as temperature, has a single current source and a mismatched differential pair for providing two different currents at a desired current ratio. Each current is provided to a current control element and a sensing element, each of which may be diodes. An operational amplifier closes the loop and feeds back a signal from the input of the current control elements to the differential pair to hold the desired current ratio constant. Chopper circuitry is employed with the amplifier to reduce the offset and low frequency noise contribution of the amplifier.

Abstract: Pulse techniques are used to periodically monitor a desired environmental condition, such as pressure. A solid-state switch is connected between a power source and a load. In the off state of the switch, power from the source drives a timer circuit which supplies a short voltage pulse to a circuit for sensing the environmental condition. At the same time, the pulse is supplied to associated circuitry for temperature compensation, amplification of the resulting sensing circuit signal, and a comparator circuit which determines whether or not a signal of the condition sensed exceeds a predetermined threshold. If such signal exceeds the threshold, the solid-state switch is turned on to connect the voltage source to the load. Turning on the switch results in substantially eliminating the voltage drop between the switch terminals, which previously was used to actuate the timer.

Abstract: A capacitive humidity sensor circuit in which a one-shot circuit produces pulses having a pulse duration determined by the capacitance of a capacitive sensing element, the one-shot circuit being triggered by the trailing edges of pulses in a pulse train produced by a multivibrator. The multivibrator is adjustable to produce a pulse train of variable repetition rate independent of the value of the measured parameter. The pulses produced by the one-shot circuit are integrated to produce a voltage indicative of the time average value of the pulses, the voltage being supplied to an amplification and offset compensation circuit whose output signal is used to adjust the supply voltage to the multivibrator so as to effectively achieve compensation for nonlinear response of the capacitive sensing element to increasing relative humidity.

Abstract: An arrangement for protecting an integrated circuit device (11) against latch up during a nuclear event comprising a capacitance (15) and a switch (17) connected in parallel across the power supply lines (13) of the device. When the power supply lines are connected to a power supply (19) the capacitance stores energy sufficient to supply necessary operating currents to the device during its normal operation. The switch is arranged so that, under a transient gamma pulse incident thereon during a nuclear event, its impedance is set to a low value at such a rate that the energy stored by the capacitance is discharged through the switch and the voltage applied to the device via the power supply lines is pulled down to such a level and at such a rate as to prevent transient gamma pulse induced latch-up in the device.

Abstract: A moisture-sensing circuit for a clothes dryer separates the moisture-sensing and timing functions in a way that minimizes undesirable interaction and reduces effects of tolerances in components, temperature, and supply-voltage. Separate comparators are provided for (1) the resistance of the moisture sensor as compared with a first threshold and (2) the time since occurrence of the most recent moisture signal that exceeded the first threshold, as compared with a second threshold representing a predetermined delay.