Abstract: A bias circuit includes a current mirror circuit, an operational amplifier, and a bias generating circuit. The current mirror circuit includes a reference branch circuit and at least one mirror branch circuit. The reference branch circuit generates a reference current according to a base current, and the at least one mirror branch circuit generates at least one mirrored current according to the reference current. The operational amplifier receives a first voltage from the reference branch circuit and a second voltage from the at least one mirror branch circuit, and adjusts the first voltage by generating a control voltage according to the second voltage. The bias generating circuit is coupled to the at least one mirror branch circuit and generates a bias signal according to the at least one mirrored current.

Abstract: An amplifier circuit includes a main amplifier and an auxiliary circuit that improves a slew rate of the main amplifier. The main amplifier is composed of a one-stage CMOS amplifier, amplifies a voltage difference between two input signals, and outputs, from output terminals, an output signal corresponding to the voltage difference of the input signals. The auxiliary circuit controls an auxiliary bias current flowing through the output terminals according to the voltage difference of the input signals, and interrupts the auxiliary bias current at a predetermined timing before completion of settling. Such a scheme enables improvement of a slew rate by the auxiliary circuit and high-speed operation as well as reduction of error due to mismatch between the main amplifier and the auxiliary circuit, thereby yielding high-accuracy output signal output therefrom.

Abstract: Power amplifiers having improved gate oxide integrity are disclosed. In particular, a dynamic asymmetric cascode bias circuit is used to provide a bias signal to a cascode power amplifier stage. The bias signal swings in synchronicity with an output signal from the power amplifier stage. By having this dynamic bias signal, the gate-drain stress on the device is reduced, preserving gate oxide integrity. Preserving gate oxide integrity helps preserve the operational profile and extend device life, providing an enhanced user experience.

Abstract: A power amplifier includes a first transistor, a second transistor, and a third transistor that are formed on a semiconductor substrate, and a bump that is electrically connected to an emitter of the first transistor and that is provided so as to, when the semiconductor substrate is viewed in plan, overlay a first disposition region where the first transistor is disposed, a second disposition region where the second transistor is disposed, and a third disposition region where the third transistor is disposed.

Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.

Abstract: An electronic circuit according to various embodiments may comprise: a switch circuit, wherein the switch circuit may comprise: a first switch connected to a first port and a second switch connected to a second port, the first and second switches being connected in series with each other; a first parallel switch connected to a node between the first switch and the second switch; and a first shunt inductor connected to the node between the first switch and the second switch and configured to cancel a parasitic capacitance component of the first parallel switch.

Abstract: Power amplifiers with adaptive bias for envelope tracking applications are provided herein. In certain embodiments, an envelope tracking system includes a power amplifier that amplifies a radio frequency (RF) signal and that receives power from a power amplifier supply voltage, and an envelope tracker that controls a voltage level of the power amplifier supply voltage based on an envelope of the RF signal. The power amplifier includes a current mirror having an input that receives a reference current, an output electrically connected to the power amplifier supply voltage, and a node that outputs a gate bias voltage. The power amplifier further includes a field-effect transistor that amplifies the radio frequency signal and a first depletion-mode transistor having a gate connected to the node of the current mirror and a source connected to a gate of the field-effect transistor.

Abstract: An amplifier circuit includes an input terminal to which a radio frequency signal is input, an amplifier transistor that has a control terminal and amplifies the radio frequency signal, a bias circuit that includes an emitter-follower circuit or a source-follower circuit and supplies a bias current to the control terminal of the amplifier transistor, an inductor arranged in series between an emitter of the emitter-follower circuit and the control terminal of the amplifier transistor or between a source of the source-follower circuit and the control terminal of the amplifier transistor, and a variable resistance circuit connected to the inductor.

Abstract: In an example apparatus, a first transistor has a base terminal, a first current terminal and a second current terminal. The base terminal is coupled to an input voltage node. A second transistor has a control terminal, a third current terminal and a fourth current terminal. The third current terminal is coupled to the second current terminal. The fourth current terminal is coupled to a first resistor. A second resistor is coupled to the control terminal. An inductor is coupled between the first resistor and a ground terminal.

Abstract: A method of phase detection includes receiving a reference clock and an input clock having a first input signal and a second input; sampling the first input signal and the second input signal into a first sample and a second sample; converting the first sample and the second sample into a first current and a second current; using a regulated current mirror to convert the first current into the third current; using a first current steering network to steer the second current into either a fourth current or a fifth current in accordance with a pulse signal; using a second current steering network to steer the third current into either a sixth current or a seventh current; connecting a lowpass filter to the output node to establish an output voltage and a lowpass-filtered voltage; and forcing the standby voltage to be equal to the lowpass-filtered voltage using a unity-gain buffer.

Abstract: A switching device may include an input terminal, an output terminal, a primary switching transistor coupled between the input terminal and the output terminal, logic circuitry configured to receive a control signal to selectively activate the switching device, a first cascode arrangement coupled between the logic circuitry and a first reference voltage supply, and a second cascode arrangement coupled between the input terminal and the primary switching transistor. The first cascode arrangement may include cascode transistors having gate terminals coupled to a first voltage divider coupled between the first reference voltage supply and a second reference voltage supply that is coupled to the logic circuitry. The second cascode arrangement may include a first cascode transistor coupled to a fixed voltage at the first voltage divider and second and third cascode transistors coupled to variable cascode bias voltages at a second voltage divider coupled to a variable voltage input.

Abstract: Disclosed is an amplifier circuit comprising a first stage having first and second input terminals, a second stage configured to amplify a voltage supplied from the first stage and including a pull-up node and a pull-down node, a third stage including an output terminal, a tenth PMOS transistor, and a tenth NMOS transistors having gate electrodes respectively connected to the pull-up node and the pull-down node of the second stage, the third stage configured to perform a pull-up driving and pull-down driving of the amplified voltage, a first boosting circuit including an eleventh PMOS transistor having a gate electrode connected to the pull-up node and the first boosting circuit configured to increase a current in the first stage, and a second boosting circuit including an eleventh NMOS transistor having a gate electrode connected to the pull-down node and configured to increase the current in the first stage.

Abstract: A variable gain amplifier includes a first transconductor circuit coupled to a first input terminal, a first output terminal, and a second output terminal of the variable gain amplifier, the first transconductor circuit including: a plurality of positive coefficient transistors coupled to the first output terminal and configured to selectively conduct current in response to a first binary code, a plurality of negative coefficient transistors coupled to the second output terminal and configured to selectively conduct current in response to a second binary code, and a plurality of amplifying transistors, each having a gate electrode coupled to the first input terminal, a first electrode coupled to a ground reference, and a second electrode coupled to a pair of coefficient transistors including one of the plurality of positive coefficient transistors and one of the plurality of negative coefficient transistors.

Abstract: An apparatus and method for using the known phenomena of quantum gate tunneling in semiconductor transistors to define the DC state of a charge-coupled amplifier is described. A first stage in which the tunneling current is bipolar (by pairing PMOS and NMOS transistors) in combination with a second stage with a controlled common mode voltage that can be used to control the first stage tunneling current, and thus the common mode voltage at the input. This can be done without the use of additional elements that may degrade performance or power consumption, since the input devices both process the input signal and maintain the DC operating point of the circuit. The approach may be advantageously used not only in charge-coupled amplifiers as described herein, but also in other capacitively coupled circuits such as charge balancing analog to digital converters (ADCs) and digital to analog converters (DACs).

Abstract: An apparatus and method for a linearized RF and microwave amplifier current source by feedback of a sampled RF amplifier output signal into a current mirror amplifier bias, to modulate the amplifier bias and produce an increase in a linearized amplifier output. The linearized RF and microwave amplifier is operable over a large bandwidth extending over multiple microwave frequency octaves.

Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.

Abstract: A digital compensation system for a radio frequency (RF) power amplifier module is disclosed. The digital compensation system includes an RF power amplifier having a first input, a first output, and a first bias input, wherein the RF power amplifier is configured to receive an RF signal at the first input and generate an amplified version of the RF signal at the first output. The digital compensation system also includes compensation circuitry coupled between the first input and the first output and a bias output coupled to the RF power amplifier, wherein the compensation circuitry is configured, in response to the RF signal, to generate or adjust a bias signal at the first bias input to correct dynamic bias errors caused by amplification variations that have time constants.

Abstract: An example circuit includes a first source follower input stage having a reference voltage input and a first output. A second source follower input stage has a feedback voltage input and a second output, in which second source follower input stage is configured to receive a feedback voltage at the feedback voltage input. The feedback voltage is representative of an output voltage at an output terminal of the circuit. A common gate differential gain stage has first and second differential inputs and first and second drive outputs. The first differential input is coupled to the first output, and the second differential input is coupled to the second output. The common gate differential gain stage is configured to control the output voltage at the output terminal by controlling at least one of the first or second drive outputs.

Abstract: Multi-level envelope trackers with an analog interface are provided herein. In certain embodiments, an envelope tracking system for generating a power amplifier supply voltage for a power amplifier is provided. The envelope tracking system includes a multi-level supply (MLS) DC-to-DC converter that outputs multiple regulated voltages, and an MLS modulator that controls selection of the regulated voltages over time based on an analog envelope signal corresponding to an envelope of the RF signal amplified by the power amplifier.

Abstract: A semiconductor device (1) according to the present disclosure includes: an n-channel depletion-mode transistor (10); an input matching circuit inside which the gate terminal (11) and the ground terminal (22) are DC-connected; a self-bias circuit (26) including a resistor (14) biasing the transistor (10) by a voltage drop due to a current flowing through the resistor (14), and a capacitor (15) connected in parallel to the resistor 14) and regarded as short-circuit at a frequency of the high-frequency power; and a diode (31) having an endmost anode connected to the source terminal (12) and an endmost cathode connected to the ground terminal (22), and connected in one stage or connected in series in a plurality of stages in the same direction.

Abstract: Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.

Abstract: This disclosure describes amplifiers that include impedance circuits that are configured to adapt to various contexts. For example, a variable-gain amplifier can include a gain circuit configured to amplify a signal and to operate in a plurality of gain modes, and an impedance circuit coupled to the gain circuit. The impedance circuit can include an inductor and a switching-capacitive arm coupled in parallel to the inductor. The impedance circuit can be configured to operate based at least in part on a gain mode from among the plurality of gain modes.

Abstract: An impedance adjustment circuit is connected in parallel with a bias current output end of a bias circuit. The bias circuit is configured to provide bias current to a first circuit unit. The impedance adjustment circuit is configured to adjust source impedance of the first circuit unit.

Abstract: A power amplifier circuit includes a first transistor having a first terminal to which a first signal inputs, a second transistor having a first terminal to which the first signal inputs, a first resistor having a first end to which a first bias current is supplied and a second end electrically connected to the first terminal of the first transistor, a second resistor having a first end to which a second bias current is supplied and a second end electrically connected to the first terminal of the second transistor, and a third resistor having a first end connected to the first end of the first resistor and a second end connected to the first end of the second resistor.

Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.

Abstract: A protection circuit is provided. The protection circuit protects a power amplifier that includes a power transistor configured to receive a power voltage, and a bias circuit configured to supply a bias current to the power transistor. The protection circuit includes: a first transistor, connected between a terminal of the bias circuit and a ground, and configured to sink a first current from the terminal of the bias circuit; and a second transistor, comprising a first terminal connected to the power voltage, a second terminal connected to a control terminal of the first transistor, and a control terminal connected to a reference voltage.

Abstract: A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.

Abstract: Front end systems and related devices, integrated circuits, modules, and methods are disclosed. One such packaged module includes a multi-mode power amplifier circuit in an interior of a radio frequency shielding structure and an antenna external to the radio frequency shielding structure. The multi-mode power amplifier circuit includes a stacked output stage including a transistor stack of two or more transistors. The multi-mode power amplifier circuit also includes a bias circuit configured to control a bias of at least one transistor of the transistor stack based on a mode of the multi-mode power amplifier circuit. The radio frequency shielding structure can extend above a package substrate. The antenna can be on the package substrate. Other embodiments of front end systems are disclosed, along with related devices, integrated circuits, modules, methods, and components thereof.

Abstract: A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor that supplies a bias current based on a first current which is a part of a control current to the first transistor; a current output element in which a current flowing therethrough increases in accordance with a rise in temperature; and a wiring portion including a plurality of metal layers that are electrically connected to an emitter of the first transistor and that are stacked one on top of another so as to oppose the semiconductor substrate. At least one metal layer among the plurality of metal layers extends so as to overlap an area extending from at least a part of a first disposition area in which the first transistor is disposed to a second disposition area in which the current output element is disposed in plan view of the semiconductor substrate.

Abstract: A bias circuit includes first to sixth transistors and first to fifth resistors. The collector of the fifth transistor is coupled to a node in a path connecting the collector of the fourth transistor and one end of the third resistor. The collector of the sixth transistor Tr6 is coupled to one end of the fifth resistor.

Abstract: A power amplifier module includes an amplifier transistor and a bias circuit. A first power supply voltage based on a first operation mode or a second power supply voltage based on a second operation mode is supplied to the amplifier transistor. The amplifier transistor receives a first signal and outputs a second signal obtained by amplifying the first signal. The bias circuit supplies a bias current to the amplifier transistor. The bias circuit includes first and second resistors and first and second transistors. The first transistor is connected in series with the first resistor and is turned ON by a first bias control voltage which is supplied when the first operation mode is used. The second transistor is connected in series with the second resistor and is turned ON by a second bias control voltage which is supplied when the second operation mode is used.

Abstract: Composite cascode power amplifiers for envelope tracking applications are provided herein. In certain embodiments, an envelope tracking system includes a composite cascode power amplifier that amplifies a radio frequency (RF) signal and that receives power from a power amplifier supply voltage, and an envelope tracker that generates the power amplifier supply voltage based on an envelope of the RF signal. The composite cascode power amplifier includes an enhancement mode (E-MODE) field-effect transistor (FET) for amplifying the RF signal and a depletion mode (D-MODE) FET in cascode with the E-MODE FET.

Abstract: A gain compression compensation circuit of a radio frequency power amplifier includes: a low-pass filtering module configured to receive a part of radio frequency signals output from a first power amplification transistor and to filter, from the part of radio frequency signals, radio frequency signals with a frequency above a fundamental wave to obtain a filtered signal; and a rectifying module configured to receive the filtered signal output by the low-pass filtering module and to rectify the filtered signal to obtain a rectified current; and to output the rectified current to a bias transistor and superimpose the rectified current with a bias current Ibias to flow into the bias transistor.

Abstract: In accordance with an embodiment, a method for operating a millimeter-wave power amplifier including an input transistor having an output node coupled to a load path of a cascode transistor includes: receiving a millimeter-wave transmit signal at a control node of the input transistor; amplifying the millimeter-wave transmit signal to form an output signal; providing the output signal to a load coupled to an output node of the cascode transistor; and adjusting a first DC bias current of the input transistor to form a substantially constant second DC bias current of the cascode transistor.

Abstract: A charge amplifier circuit is provided. The charge amplifier circuit is couplable to a transducer that generates an electrical charge that varies with an external stimulus. The charge amplifier circuit includes an amplification stage having an input node, couplable to the transducer, and an output node. The amplification stage biases the input node at a first direct current (DC) voltage. The charge amplifier circuit includes a feedback circuit, which includes a feedback capacitor, electrically coupled between the input and output nodes of the amplification stage. The feedback circuit includes a resistor electrically coupled to the input node, and a level-shifter circuit, electrically coupled between the resistor and the output node. The level-shifter circuit biases the output node at a second DC voltage and as a function of a difference between the second DC voltage and a reference voltage.

Abstract: A power amplifier circuit has an input node from which an input signal, which is a high-frequency signal, is inputted and an output node to which the input signal is amplified by a differential amplifier circuit to be outputted as an output signal. The power amplifier circuit includes a balun transformer (second balun transformer) including an input-side winding that has a substantially center to which a power-supply voltage is supplied and that is connected between differential outputs of the differential amplifier circuit, and an output-side winding that is coupled to the input-side winding via an electromagnetic field and that has one end connected to a reference potential; and a capacitive element (capacitor) provided between another end (node) of the output-side winding and the output node.

Abstract: The present disclosure provides a technology for a level shifter that allows the selection of a single-stage level shifter or a two-stage level shifter by a simple alteration to wiring. When the single-stage level shifter is selected, some circuits may remain as dummy circuits.

Abstract: Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation. These packaged RF transistor amplifiers may have an output power density of at least 3.0 W/mm2.

Abstract: Disclosed is a bias circuit for a radio frequency power amplifier, including a resistor voltage divider network, a power amplifier coupled with the resistor voltage divider network and a bias voltage adjusting loop coupled to the resistor voltage divider network and including one voltage divider resistor and one transistor pair; one terminal of the voltage divider resistor is connected with a reference voltage, and an other terminal is coupled with a gate of the first metal oxide semiconductor transistor; the transistor pair includes a first metal oxide semiconductor transistor and a second metal oxide semiconductor transistor, where a gate of the second metal oxide semiconductor transistor is coupled to the gate of the first metal oxide semiconductor transistor.

Abstract: RF transistors manufactured using a bulk CMOS process exhibit non-linear drain-body and source-body capacitances which degrade the linearity performance of the RF circuits implementing such transistors. The disclosed methods and devices address this issue and provide solutions based on implementing two or more bias voltages in accordance with the states of the transistors. Various exemplary RF circuits benefiting from the described methods and devices are also presented.

Abstract: The present invention discloses a bias compensation circuit. The bias compensation circuit includes a detecting circuit, including a diode-connected transistor circuit, with a first end for receiving a first current, and a second end coupled to a first reference voltage end; and a first diode circuit, with a first end for receiving a second current, and a second end coupled to the first reference voltage end; wherein the detecting circuit provides a first voltage level according to the diode-connected transistor circuit, and provides a second voltage level according to the first diode circuit; a voltage-current converting circuit, coupled to the detecting circuit, for generating a first reference current according to the first voltage level and the second voltage level; and a bias circuit, coupled to the voltage-current converting circuit, for receiving the first reference current, to provide a bias voltage level according to the first reference current.

Abstract: An embodiment integrated electronic device comprises a mixer module including a voltage/current transconductor stage including first transistors and connected to a mixing stage including second transistors, wherein the mixing stage includes a resistive degeneration circuit connected to the sources of the second transistors and a calibration input connected to the gates of the second transistors and intended to receive an adjustable calibration voltage, and the sources of the first transistors are directly connected to a cold power supply point.

Abstract: Multi-level envelope tracking systems with adjusted voltage steps are provided. In certain embodiments, an envelope tracking system for generating a power amplifier supply voltage for a power amplifier is provided. The envelope tracking system includes a multi-level supply (MLS) DC-to-DC converter that outputs multiple regulated voltages, an MLS modulator that controls selection of the regulated voltages over time based on an envelope signal corresponding to an envelope of a radio frequency (RF) signal amplified by the power amplifier, and a modulator output filter coupled between an output of the MLS modulator and the power amplifier supply voltage. The envelope tracking system further includes a switching point adaptation circuit configured to control the voltage level of the regulated voltages outputted by the MLS DC-to-DC converter based on a power level of the RF signal.

Abstract: Aspects of the description provide for a circuit. In some examples, the circuit includes a input pair of transistors, a bias transistor having a bias transistor gate, a bias transistor drain, and a bias transistor source, the bias transistor drain coupled to the input pair of transistors and the bias transistor source coupled to ground, and a resistor coupled between the bias transistor gate and the input pair of transistors.

Abstract: Physical Unclonable Functions, PUFs, are hardware devices designed to generate a number that is random (i.e., two identical PUFs should produce randomly different numbers from each other) and persistent (i.e., a PUF should consistently generate the same number over time). Over time, aspects of the PUF hardware may change or drift, which may ultimately cause the generated number to change, and therefore no longer be persistent. Failure to generate a persistent number may cause difficulties for other devices that rely on the persistence of the number generated by the PUF, for example as part of a cryptographic process. The present disclosure relates to monitoring over time the physical characteristics of the PUF that are used to generate its number, and thereby keep track of its reliability to generate a random number that is persistent.

Abstract: Apparatus and methods for bias switching of power amplifiers are provided herein. In certain configurations, a power amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal and a bias control circuit that biases the power amplifier. The power amplifier includes an amplification transistor that receives the RF signal at an input, and a first bias network and a second bias network each connected to the input. The bias control circuit includes a first switch, a first reference current source that provides the first reference current to the first bias network through the first switch, a second switch, and a second reference current source that provides the second reference current to the second bias network through the second switch.

Abstract: A bidirectional RF circuit, preferably including a plurality of terminals, a switch, a transistor, a coupler, and a feedback network. The circuit can optionally include a drain matching network, an input matching network, and/or one or more tuning inputs. In some variations, the circuit can optionally include one or more impedance networks, such as an impedance network used in place of the feedback network; in some such variations, the circuit may not include a coupler, switch, and/or input matching network. A method for circuit operation, preferably including operating in an amplifier mode, operating in a rectifier mode, and/or transitioning between operation modes.

Abstract: This disclosure describes systems, methods, and apparatus for generating a multi-level pulsed waveform using a DC section and a power amplifier. To improve DC section efficiency, a master state is used to determine when the rail voltage can be lowered, and to only allow a state assigned as the master state to lower the rail voltage. Selection of the master state is based on (1) any state having to raise the rail voltage to meet a power demand or (2) a state having the highest drive voltage as determined at the end of each pulse cycle. Further, to avoid challenges from integrator controller, drive voltage is carried over from a last state of one pulse cycle to a first state of a next pulse cycle and assignment of master state in the first state of each pulse cycle is not important and can be arbitrarily selected.

Abstract: A reconfigurable amplifier includes a first transistor having a gate coupled to an input of the reconfigurable amplifier, and a source coupled to a ground. The reconfigurable amplifier also includes a gate control circuit, and a second transistor having a gate coupled to the gate control circuit, a source coupled to a drain of the first transistor, and a drain coupled to an output of the reconfigurable amplifier, wherein the gate control circuit is configured to output a bias voltage to the gate of the second transistor in a cascode mode, and output a switch voltage to the gate of the second transistor in a non-cascode mode. The reconfigurable amplifier further includes a load coupled to the output of the reconfigurable amplifier.

Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.