Including Frequency-responsive Means In The Signal Transmission Path Patents (Class 330/302)
  • Patent number: 11522504
    Abstract: Inductance-capacitance (LC) resonators having different resonant frequencies, and radio frequency (RF) transistor amplifiers including the same. One usage of such LC resonators is to implement RF short/DC block circuits. A RF transistor amplifier may include a transistor on a base of the RF transistor amplifier coupled to an input and an output of the RF transistor amplifier; a first inductance-capacitance (LC) resonator comprising a first inductance and a first capacitance; and a second LC resonator comprising a second inductance and a second capacitance. The first LC resonator may be configured to resonate at a first frequency, and the second LC resonator may be configured to resonate at a second frequency different from the first frequency.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: December 6, 2022
    Assignee: Wolfspeed, Inc.
    Inventors: Haedong Jang, Madhu Chidurala, Richard Wilson
  • Patent number: 11521831
    Abstract: In one embodiment, the present disclosure is directed to a method for impedance matching. A matching network includes a first reactance element and a second reactance element. A sensor detects a value related to the plasma chamber or the matching network, and a system parameter is determined based on the detected value. For the determined system parameter, an error-related value is calculated for each of a plurality of potential first reactance element positions or for each of a plurality of potential second reactance element positions. A new first reactance element position and a new second reactance element position are calculated based on the error-related values calculated in the prior step. The first reactance element and the second reactance element are then altered to their new positions to reduce a reflected power.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: December 6, 2022
    Inventor: Michael Gilliam Ulrich
  • Patent number: 11469725
    Abstract: Apparatus and methods for power amplifier output matching is disclosed. In one aspect, there is provided an output matching circuit including an input configured to receive an amplified radio frequency signal from a power amplifier, a first output, and a second output. The output matching circuit further includes a first matching circuit electrically connected between the input of the output matching circuit and the first output, the first matching circuit configured to suppress harmonics of a fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a first band. The output matching circuit further includes a second matching circuit electrically connected between the input of the output matching circuit and the second output, the second matching circuit configured to suppress harmonics of the fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a second band different from the first band.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: October 11, 2022
    Assignee: Skyworks Solutions, Inc.
    Inventors: Yuan Cao, Yu-Jui Lin, Russ Alan Reisner
  • Patent number: 11444586
    Abstract: A radio frequency amplifier includes a transistor, an input impedance matching circuit (e.g., a single-section T-match circuit or a multiple-section bandpass circuit), and a fractional harmonic resonator circuit. The input impedance matching circuit is coupled between an amplification path input and a transistor input terminal. An input of the fractional harmonic resonator circuit is coupled to the amplification path input, and an output of fractional harmonic resonator circuit is coupled to the transistor input terminal. The fractional harmonic resonator circuit is configured to resonate at a resonant frequency that is between a fundamental frequency of operation of the RF amplifier and a second harmonic of the fundamental frequency. According to a further embodiment, the fractional harmonic resonator circuit resonates at a fraction, x, of the fundamental frequency, wherein the fraction is between about 1.25 and about 1.9 (e.g., x?1.5).
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: September 13, 2022
    Assignee: NXP USA, Inc.
    Inventors: Jeffrey Spencer Roberts, Ning Zhu, Damon g. Holmes, Jeffrey Kevin Jones
  • Patent number: 11418158
    Abstract: A first power amplifier amplifies first transmission signals in a first frequency band and outputs the resultant signals. A first matching circuit includes a plurality of first inductor portions and is connected to an output pad electrode of the first power amplifier. A second power amplifier amplifies second transmission signals in a second frequency band higher than the first frequency band and outputs the resultant signals. A second matching circuit includes at least one second inductor portion and is connected to an output side of the second power amplifier. A multilayer substrate has a first main surface and a second main surface located opposite to each other and is provided with the first and second power amplifiers and the first and second matching circuits. The first inductor portion closer than the other first inductor portions to the output pad electrode includes an inner-layer inductor portion located in the multilayer substrate.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: August 16, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yoshihiro Daimon, Kenji Tahara
  • Patent number: 11381204
    Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: July 5, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hisanori Namie, Mitsunori Samata, Satoshi Tanaka
  • Patent number: 11357476
    Abstract: Provided is a probe which transmits an ultrasonic wave to a diagnostic site and receives a reception signal which is a reflected wave.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: June 14, 2022
    Assignee: FUJIFILM Healthcare Corporation
    Inventors: Yutaka Igarashi, Shinya Kajiyama, Yohei Nakamura, Kengo Imagawa, Kazuhiro Amino, Takayuki Iwashita
  • Patent number: 11356068
    Abstract: Compact low noise amplifiers that have wide-band coverage while meeting necessary input matching and output matching characteristics. Embodiments include a wide-band, two-stage LNA with minimum degradation in performance compared to multiple narrow-band, single-stage LNAs. A generalized embodiment includes a first amplifier stage having a terminal coupled to a mutually coupled inductor circuit and to a second amplifier stage. The second amplifier stage includes a terminal coupled to the mutually coupled inductor circuit. The mutually coupled inductor circuit comprises electromagnetically coupled inductors L1, L2. Second terminals of the first and second amplifier stages are coupled to respective degeneration inductors. The electromagnetically coupled inductors L1, L2 of the inductor circuit substantially increase the output bandwidth of the LNA with minimum degradation in performance.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: June 7, 2022
    Assignee: pSemi Corporation
    Inventors: Rong Jiang, Khushali Shah
  • Patent number: 11344748
    Abstract: A multi-mode cone beam computed tomography radiotherapy simulator and treatment machine is disclosed. The radiotherapy simulator and treatment machine both include a rotatable gantry on which is positioned a cone-beam radiation source and a flat panel imager. The flat panel imager captures x-ray image data to generate cone-beam CT volumetric images used to generate a therapy patient position setup and a treatment plan.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: May 31, 2022
    Assignee: Varian Medical Systems, Inc.
    Inventors: Edward G. Shapiro, Edward J. Seppi, John M. Pavkovich, Stanley W. Johnsen, Richard E. Colbeth
  • Patent number: 11336234
    Abstract: A power amplifier circuit includes a power amplifier that amplifies an input signal and outputs the amplified signal from an output terminal thereof, a first filter circuit that has a frequency characteristic that attenuates an Nth-order harmonic of the amplified signal, N that is an integer greater than or equal to 2, and a second filter circuit that has a frequency characteristic that attenuates the Nth-order harmonic of the amplified signal. The first filter circuit includes a first capacitor and a first inductor. The first capacitor and the first inductor are connected in series between the output terminal and ground. The second filter circuit includes a second capacitor and a second inductor. The second capacitor and the second inductor are connected in series between the output terminal and ground.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: May 17, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Yamada, Yuuri Honda, Satoshi Tanaka
  • Patent number: 11329632
    Abstract: One inductor and another inductor are magnetically coupled to each other. A variable current source controls the current flowing in the one inductor. By controlling the current flowing in the one inductor, the inductance value of the other inductor is made variable.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: May 10, 2022
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Yoshiaki Morino, Mitsuhiro Shimozawa
  • Patent number: 11329614
    Abstract: A high-frequency power supply circuit includes an amplifier circuit. In the amplifier circuit, one end of an inductor is connected to a direct-current power supply. One end of a switching element is connected to the other end of the inductor. A parallel capacitor is connected in parallel to the switching element. One end of an LC series circuit is connected to the one end of the switching element. A circuit capacitor is connected between the other end of the LC series circuit and the other end of the switching element. The amplifier circuit amplifies a signal having a unique frequency input to a control terminal of the switching element. The amplifier circuit outputs, to a load, a current having the frequency from a connection point between the other end of the LC series circuit and the circuit capacitor.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: May 10, 2022
    Assignee: DAIHEN Corporation
    Inventor: Hiroyuki Kotani
  • Patent number: 11329611
    Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: May 10, 2022
    Assignee: pSemi Corporation
    Inventors: Rong Jiang, Haopei Deng
  • Patent number: 11323081
    Abstract: A power amplifier circuit includes lower-stage and upper-stage differential amplifying pairs, a combiner, first and second inductors, and first and second capacitors. First and second signals are input into the lower-stage differential amplifying pair. The upper-stage differential amplifying pair outputs first and second amplified signals. The combiner combines the first and second amplified signals. The lower-stage differential amplifying pair includes first and second transistors. A supply voltage is supplied to the collectors of the first and second transistors. The first and second signals are supplied to the bases of the first and second transistors. The upper-stage differential amplifying pair includes third and fourth transistors. A supply voltage is supplied to the collectors of the third and fourth transistors. The emitters of the third and fourth transistors are grounded via the first and second inductors and are connected to the first and second transistors via the first and second capacitors.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: May 3, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Arayashiki, Kazuo Watanabe, Satoshi Tanaka
  • Patent number: 11296662
    Abstract: The present invention relates to a high-frequency power amplifier in which mainly an amplification GaN chip and a GaAs chip which has a pre-match circuit for the former formed thereon are connected by wires on an identical metal plate. The high-frequency power amplifier according to the present invention is provided with a coupler exhibiting a mutual inductance of a subtractive polarity on the GaAs chip, thereby making it possible to: cancel a mutual inductance between adjacent wires; reduce the spread of a second harmonic impedance with respect to a frequency when a signal source is viewed from a gate terminal of the GaN chip; and maintain a high efficiency of the power amplifier in a desired fundamental wave band.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: April 5, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventor: Yoshinobu Sasaki
  • Patent number: 11296660
    Abstract: A radio-frequency module includes a substrate, a first circuit arranged on the substrate and includes a first amplifier for amplifying a diversity signal, and a second circuit arranged on the substrate and includes a second amplifier for amplifying a MIMO signal. The first amplifier and the second amplifier are formed on a single component and are arranged in a central portion in a plan view of the substrate. The first circuit and the second circuit may include a first matching element connected to the first amplifier and a second matching element connected to the second amplifier, respectively. The first amplifier and the second amplifier may be arranged in the central portion on a first main surface of the substrate. The first matching element and the second matching element may be arranged in the central portion on a second main surface of the substrate.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: April 5, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Yusuke Naniwa
  • Patent number: 11290067
    Abstract: A radio frequency circuit has an amplifier that amplifies an input radio frequency signal, a power supply path that is disposed between an output node of the amplifier and a power supply node to which a DC bias voltage is supplied, and includes a first inductor and a second inductor connected in series, a first resonator that comprises a third inductor and a first capacitor connected in series to the third inductor, and resonates at a series resonance frequency, a second resonator that resonates at a series resonance frequency corresponding to an inductance of the first inductor, a capacitance of the second capacitor, and a resistance value of the first resistor, and a third resonator that comprises a third capacitor connected in parallel with the second inductor, and resonates at a parallel resonance frequency corresponding to a capacitance of the third capacitor and an inductance of the second inductor.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: March 29, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION
    Inventor: Keiichi Yamaguchi
  • Patent number: 11284859
    Abstract: Provided is a probe which transmits an ultrasonic wave to a diagnostic site and receives a reception signal which is a reflected wave.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: March 29, 2022
    Assignee: FUJIFILM Healthcare Corporation
    Inventors: Yutaka Igarashi, Shinya Kajiyama, Yohei Nakamura, Kengo Imagawa, Kazuhiro Amino, Takayuki Iwashita
  • Patent number: 11283415
    Abstract: A MIM capacitor is included in any one or more of a first matching circuit and a second matching circuit. The mat capacitor performs impedance matching of a fundamental wave included in a high-frequency signal with a transmission line, and forms a short-circuit point for a harmonic included in the high-frequency signal at a connection point with the transmission line.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: March 22, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventors: Dai Ninomiya, Eigo Kuwata, Kazuhiko Nakahara, Makoto Kimura, Yoshitaka Kamo
  • Patent number: 11277099
    Abstract: An RF power amplifier includes an amplifier device and a shunt-inductance circuit. The amplifier device includes a substrate, a combining node lead, first and second amplifier dies coupled to the substrate, and first and second output circuits. The first and second amplifier dies are configured to amplify first and second input RF signals, respectively, to produce first and second output RF signals at first and second output terminals, respectively. The first output circuit includes a first inductive path connecting the first output terminal to the lead. The second output circuit includes a second inductive path connecting the second output terminal to the lead. The lead is configured to combine the first and second output RF signals to produce a third output RF signal. The shunt-inductance circuit is coupled between the first output terminal and a ground reference.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: March 15, 2022
    Assignee: NXP USA, Inc.
    Inventors: Ramanujam Srinidhi Embar, Ning Zhu, Muhammad Abduhu Ruhul Hasin, Roy McLaren
  • Patent number: 11239187
    Abstract: A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: February 1, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tsutomu Kobori, Hiroshi Okabe, Shigeru Yoshida, Shingo Yanagihara, Yoshifumi Takahashi
  • Patent number: 11239803
    Abstract: Various methods and circuital arrangements for protection of an RF amplifier are presented. According to one aspect, the RF amplifier is part of switchable RF paths that may include at least one path with one or more attenuators or switches that can be used during normal operation to define different modes of operation of the at least one path. An RF level detector monitors a level of an RF signal during operation of any one of the switchable RF paths and may control the attenuators or switches to provide an attenuation of the RF signal according to a desired level of protection at an input and/or output of the RF amplifier. According to another aspect, the RF level detector may control a switch to force the RF signal through a different switchable RF path.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: February 1, 2022
    Assignee: PSEMI CORPORATION
    Inventors: Parvez Daruwalla, David Kovac
  • Patent number: 11223326
    Abstract: A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: January 11, 2022
    Assignee: NXP USA, Inc.
    Inventors: Joseph Gerard Schultz, Enver Krvavac, Olivier Lembeye, Cedric Cassan, Kevin Kim, Jeffrey Kevin Jones
  • Patent number: 11205997
    Abstract: An apparatus includes: a transistor including an input terminal for an input signal and an output terminal for an output signal; a matching circuit configured to match a load impedance regarding a fundamental harmonic of at least one of the input signal and the output signal to an impedance of the transistor and include a first conductive film being laminated over the transistor and coupled to at least one of the input terminal and the output terminal; and a processing circuit configured to adjust an impedance regarding a harmonic of at least one of the input signal and the output signal and include a second conductive film being laminated over the first conductive film and coupled to at least one of the input terminal and the output terminal through a via which penetrates through a dielectric layer sandwiched between the first conductive film and the second conductive film.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: December 21, 2021
    Assignee: FUJITSU LIMITED
    Inventor: Yohei Yagishita
  • Patent number: 11205998
    Abstract: An amplifier may comprise first and second matching networks; first and second transistors; and a transformer including first to third inductors. Also, a gate and a source of the first transistor are connected to the first matching network, one end of the first inductor is connected to a drain of the first transistor, the other end of the first inductor is connected to a source of the second transistor, one end of the second inductor is connected to a gate of the second transistor, the other end of the second inductor is grounded, one end of the third inductor is connected to a drain of the second transistor, and the other end of the third inductor is connected to the second matching network.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: December 21, 2021
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sun Woo Kong, Kwang Seon Kim, Jee Hoon Park, Kwang Chun Lee, Hui Dong Lee, Seung Hyun Jang
  • Patent number: 11165392
    Abstract: Systems and methods including variable power amplifier bias impedance are disclosed. In one aspect, there is provided a power amplifier system including a bias circuit configured to receive a bias voltage and generate a bias signal and a power amplifier stage configured to receive an input radio frequency (RF) signal and generate an output RF signal. The power amplifier system may also include a bias impedance component operatively coupled between the bias circuit and the power amplifier stage. The bias impedance is component configured to receive a control signal and adjust an impedance value of the bias impedance component in response to the control signal.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: November 2, 2021
    Assignee: Skyworks Solutions, Inc.
    Inventor: Philip John Lehtola
  • Patent number: 11139783
    Abstract: A circuit structure for improving the harmonic suppression capability of a radio frequency power amplifier includes an output stage unit, a high-order harmonic suppression unit, and a low-order harmonic suppression unit. The output stage unit outputs a signal to be subjected to harmonic suppression; the high-order harmonic suppression unit comprises a first filter capacitor and a back hole, and is used for suppressing fifth or higher harmonics; the output stage unit and the first filter capacitor are connected to the ground in series by means of the back hole; the low-order harmonic suppression unit is connected to the output stage unit to suppress second, third and fourth harmonics. According to the design, the high-harmonic suppression capability of the radio frequency power amplifier is improved.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: October 5, 2021
    Assignee: LANSUS TECHNOLOGIES INC
    Inventors: Jiahui Zhou, Bin Hu, Jiashuai Guo, Kai Xuan, Hua Long
  • Patent number: 11128269
    Abstract: An amplifier includes a driver stage amplifier transistor and a final stage amplifier transistor, which are integrated in a semiconductor die. The driver stage amplifier transistor has a driver stage input, a driver stage output, and an output impedance, and the driver stage amplifier transistor is configured to operate using a first bias voltage at the driver stage output. The final stage amplifier transistor has a final stage input, a final stage output, and an input impedance. The final stage input is electrically coupled to the driver stage output. The final stage amplifier transistor is configured to operate using a second bias voltage at the final stage output, and the second bias voltage is at least twice as large as the first bias voltage.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: September 21, 2021
    Assignee: NXP USA, Inc.
    Inventors: Elie A. Maalouf, Yu-Ting David Wu, Lu Wang, Nick Yang
  • Patent number: 11113225
    Abstract: An interconnect interface is provided to enable communication with an off-package device over a link including a plurality of lanes. Logic of the interconnect interface includes receiver logic to receive a valid signal from the off-package device on a dedicated valid lane of the link indicating that data is to arrive on a plurality of dedicated data lanes in the plurality of lanes, receive the data on the data lanes from the off-package device sampled based on arrival of the valid signal, and receive a stream signal from the off-package device on a dedicated stream lane in the plurality of lanes. The stream signal corresponds to the data and indicates a particular data type of the data. The particular data type can be one of a plurality of different data types capable of being received on the plurality of data lanes of the link.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: September 7, 2021
    Assignee: Intel Corporation
    Inventors: Debendra Das Sharma, Zuoguo Wu, Mahesh Wagh, Mohiuddin M. Mazumder, Venkatraman Iyer, Jeff C. Morriss
  • Patent number: 11088909
    Abstract: A reconfigurable triplexer that can support more frequency bands than a traditional triplexer is disclosed. For example, the reconfigurable triplexer can handle frequencies of several hundred megahertz up to 10 gigahertz. Further, certain implementations of the reconfigurable multiplexer can reduce or eliminate frequency dead zones that exist with traditional multiplexers. The reconfigurable triplexer includes a multi-stage filter bank capable of supporting a number of frequency bands and a bypass circuit that enables the triplexer to support a variety of sets of frequencies. For instance, unlike traditional triplexers, the reconfigurable triplexer can support both frequency bands with relatively narrow spacing and frequency bands with relatively wide spacing. Further, the inclusion of the bypass circuit enables the reduction or elimination of dead zones between supported frequencies.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: August 10, 2021
    Assignee: Skyworks Solutions, Inc.
    Inventors: Yang Hou, Reza Kasnavi, Jianxing Ni, Shanshan Zhao
  • Patent number: 11018712
    Abstract: A wireless multi-band device comprises a radiating system comprising a ground plane layer, a boosting element, and a radiofrequency system, wherein the radiofrequency system comprises a tunable reactive element.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: May 25, 2021
    Assignee: Fractus Antennas, S.L.
    Inventors: Jaume Anguera Pros, Aurora Andujar Linares
  • Patent number: 11012035
    Abstract: The embodiments described herein include amplifiers that are typically used in radio frequency (RF) applications. Specifically, the amplifiers described herein include one or more transient termination circuits coupled to transistor inputs. For example, the transient termination circuits can be configured to reduce the transient response for some signal energy at frequencies below a baseband frequency (fB) of signals being amplified while not similarly reducing the transient response for signal energy near a fundamental frequency (f0) of the signals being amplified.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: May 18, 2021
    Assignee: NXP USA, Inc.
    Inventors: Arturo Roiz, Justin Nelson Annes, Ricardo Uscola, Terry L. Thomas
  • Patent number: 11005433
    Abstract: The disclosed technology can include a power amplifier comprising an input, an output, and a transformer. The power amplifier can include a primary inductor coil coupled to the input, a secondary inductor coil coupled to the output, and three harmonic branches coupled to the primary coil. Each branch can comprise at least one electrical component having a tunable impedance.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: May 11, 2021
    Assignee: Georgia Tech Research Corporation
    Inventor: Tso-Wei Li
  • Patent number: 10992268
    Abstract: A radio frequency signal amplification device includes an amplification circuit, an impedance matching circuit, a frequency detection circuit, and a control circuit. The amplification circuit has an input terminal and an output terminal. The amplification circuit amplifies a radio frequency (RF) signal received from the input terminal, and generates an amplified radio frequency signal to the output terminal. The impedance matching circuit is coupled to the input terminal or the output terminal of the amplification circuit. The impedance matching circuit receives the radio frequency signal and provides an impedance matching the radio frequency signal, or receives the amplified radio frequency signal and provides an impedance matching the amplified radio frequency signal. The frequency detection circuit determines a frequency band to which the radio frequency signal belongs. The control circuit adjusts the impedance of the impedance matching circuit according to the frequency band.
    Type: Grant
    Filed: September 15, 2019
    Date of Patent: April 27, 2021
    Assignee: RichWave Technology Corp.
    Inventors: Shyh-Chyi Wong, Cheng-Min Lin
  • Patent number: 10972060
    Abstract: In a radio frequency power amplifier, a semiconductor chip includes at least one first transistor amplifying a radio frequency signal, a first external-connection conductive member connected to the first transistor, a bias circuit including a second transistor that applies a bias voltage to the first transistor, and a second external-connection conductive member connected to the second transistor. The second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: April 6, 2021
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Kenji Sasaki, Isao Obu, Takayuki Tsutsui
  • Patent number: 10944370
    Abstract: A multi-gain mode power amplifier, a chip, and a communication terminal. The multi-gain mode power amplifier comprises at least one amplifier circuit. The amplifier circuit comprises a bias circuit, a feedback circuit, a transistor (101), and an input matching network/output matching network. A bias voltage or a control voltage (120) is adjusted to make the feedback circuit to be either turned on or turned off, thus allowing the amplifier circuit to work in a high-gain mode or a low-gain mode. The multi-gain mode power amplifier has different gain modes, fully satisfies the actual demand of the communication terminal to work in the high-gain mode when transmitting a high power and to work in the low-gain mode when transmitting a low power.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: March 9, 2021
    Assignee: VANCHIP (TIANJIN) TECHNOLOGY CO., LTD.
    Inventor: Jinxin Zhao
  • Patent number: 10855244
    Abstract: A transistor device includes a transistor cell comprising a channel region, a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode, and a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: December 1, 2020
    Assignee: Cree, Inc.
    Inventors: Frank Trang, Zulhazmi Mokhti, Guillaume Bigny
  • Patent number: 10825785
    Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: November 3, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hisanori Namie, Satoshi Goto, Satoshi Tanaka
  • Patent number: 10812025
    Abstract: Radio frequency (RF) amplifier circuitry includes an input node, an output node, an amplifier, and bootstrap circuitry. The amplifier includes a control node coupled to the input node, a first amplifier node coupled to the output node, and a second amplifier node coupled to a fixed potential. The amplifier is configured to receive an input signal having a first frequency at the control node and change an impedance between the first amplifier node and the second amplifier node based on the input signal. The bootstrap circuitry is coupled between the control node and the second amplifier node. The bootstrap circuitry is configured to provide a low impedance path between the control node and the second amplifier node for signals having a second frequency that is equal to about twice the first frequency and provide a high impedance path for signals having a frequency outside the second frequency.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: October 20, 2020
    Assignee: Qorvo US, Inc.
    Inventors: Marcus Granger-Jones, George Maxim, Jinsung Choi
  • Patent number: 10720894
    Abstract: A power amplifier is provided having an input for receiving a signal to be amplified that is associated with a fundamental frequency. An amplifier circuit of the power amplifier includes an active device for amplifying the input signal and an output for providing the amplified signal to a load. A load network is electrically interposed between the amplifier circuit and the output and includes fundamental frequency matching circuitry which presents an optimal resistance at the fundamental frequency. The load network further includes a parallel transmission line arrangement having, at the fundamental frequency, a one-eighth wavelength short-circuited stub and a one-eighth wavelength open-circuit stub. The fundamental frequency matching circuitry and the parallel transmission line arrangement cooperate such that the load network operatively presents an optimal resistance at the fundamental frequency, an open-circuit at a second harmonic frequency and a short-circuit at a third harmonic frequency.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: July 21, 2020
    Assignee: Cape Peninsula University of Technology
    Inventors: Safari Mugisho Moise, Clive Whaits
  • Patent number: 10715084
    Abstract: A power amplifier circuit includes an amplifier that receives an input signal with an alternating current and outputs an output signal obtained by amplifying power of the input signal to a first node; an inductive element that is connected between the first node and a second node; and a variable capacitor that is connected between the second node and a reference potential, and whose electrostatic capacitance increases as power of the output signal increases.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: July 14, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Tanaka, Masatoshi Hase, Norio Hayashi, Kazuo Watanabe, Yuuri Honda
  • Patent number: 10700651
    Abstract: A wide bandpass filtering power amplifier using discriminating coupling is disclosed, which comprises a DC bias circuit, an input impedance matching circuit, a transistor and an output impedance matching circuit. The DC bias circuit is connected to the input impedance matching circuit which is further connected to the transistor, and the transistor is further connected to the output impedance matching circuit which comprises a tuning microstrip line and a bandpass filter. The complexity and the area of the impedance matching circuit in the power amplifier are effectively reduced. At the same time, the filtering PA has good frequency selectivity by using the discriminating coupling BPF. Meanwhile the work efficiency and bandwidth of the filtering power amplifier are effectively improved by taking both of the extended continuous mode theory and filter synthesis theory into account.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: June 30, 2020
    Assignee: South China University of Technology
    Inventors: Yuanchun Li, Qinchuang Chen, Quan Xue
  • Patent number: 10700650
    Abstract: Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.
    Type: Grant
    Filed: January 8, 2019
    Date of Patent: June 30, 2020
    Assignee: pSemi Corporation
    Inventors: Emre Ayranci, Miles Sanner, Phanindra Yerramilli
  • Patent number: 10685927
    Abstract: A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: June 16, 2020
    Assignee: Ampleon Netherlands B.V.
    Inventors: Johannes Adrianus Maria De Boet, Yi Zhu, Yuri Volokhine, Vittorio Cuoco, Albertus Gerardus Wilhelmus Philipus Van Zuijlen, Iordan Konstantlnov Sveshtarov, Josephus Henricus Bartholomeus Van der Zanden
  • Patent number: 10680561
    Abstract: A power amplifier module includes an amplifier that amplifies an input signal and outputs the amplified signal, a harmonic termination circuit that is disposed subsequent to the amplifier and that attenuates a harmonic component of the amplified signal, the harmonic termination circuit including at least one field effect transistor (FET), and a control circuit that controls a gate voltage of the at least one FET to adjust a capacitance value of a parasitic capacitance of the at least one FET. The control circuit adjusts the capacitance value of the parasitic capacitance of the at least one FET, and thereby a resonance frequency of the harmonic termination circuit is adjusted.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: June 9, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Shota Ishihara, Yuji Shintomi, Satoshi Matsumura
  • Patent number: 10673393
    Abstract: An amplifier for a receiver circuit is disclosed. The amplifier has an input node (Vin) and an output node (Vout). It comprises a tunable tank circuit connected to the output node (Vout), a feedback circuit path connected between the output node (Vout) and the input node (Vin), and a tunable capacitor connected between an internal node of the feedback circuit path and a reference-voltage node. A receiver circuit and a communication apparatus is disclosed as well.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: June 2, 2020
    Assignee: TELEFONAKTIEBOLAGET LM ERICSSON (publ)
    Inventor: Fenghao Mu
  • Patent number: 10666204
    Abstract: A circuit includes an amplifier to amplify an input signal and generate an output signal. The circuit also includes a tuning network to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, which includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure over a control structure, which is to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: May 26, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Aritra Banerjee, Nathan R. Schemm, Rahmi Hezar, Lei Ding, Baher Haroun
  • Patent number: 10666207
    Abstract: The operative bandwidth of a broadband RF amplifier is improved by using a low-pass type broadband impedance transformer, instead of a broadband matching network, in a multi-stage impedance matching network connected, e.g., to the amplifier input. The multi-stage impedance matching network comprises three stages connected in series. The first stage is a low-pass type broadband impedance transformer that provides broadband fundamental impedances and high reflection for the second harmonics. The second stage is a phase shifter that controls the location of the second harmonic reflection coefficient phases. The third stage is a high-pass input matching circuit that transforms the complex conjugate device input impedance to a real impedance.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: May 26, 2020
    Assignee: Cree, Inc.
    Inventors: Haedong Jang, Richard Wilson, Björn Herrmann, Zulhazmi Mokhti
  • Patent number: 10601376
    Abstract: A receiver front end having low noise amplifiers (LNAs) with enhanced input third order intercept point is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured load FET have a degeneration circuit comprising a tank circuit tuned to a harmonic of the operating frequency.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: March 24, 2020
    Assignee: pSemi Corporation
    Inventor: Michael P. Gaynor
  • Patent number: 10594273
    Abstract: A power amplifier module includes a first amplifier that amplifies an input signal to generate a first amplified signal and outputs the first amplified signal, a second amplifier that amplifies the first amplified signal to generate a second amplified signal and outputs the second amplified signal, and a matching network disposed between an output terminal of the first amplifier and an input terminal of the second amplifier. The first amplifier is provided on a first chip, and the second amplifier is provided on a second chip. The matching network has an impedance transformation characteristic adjustable in accordance with a control signal.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: March 17, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Shingo Yanagihara