Abstract: A piezoelectric thin-film filter includes a first electrode pair having two or more first electrode fingers disposed on one main surface of a piezoelectric thin film and second electrode fingers disposed on the other main surface of the piezoelectric thin film so as to face the first electrode fingers. A second electrode pair includes two or more third electrode fingers disposed on the main surface such that the third electrode fingers and the first electrode fingers are disposed alternately with gaps therebetween and fourth electrode fingers disposed on the other main surface so as to face the third electrode fingers with the piezoelectric thin film therebetween. Insulating films are provided between the first and third electrode fingers. Each of the center-to-center distances Wa+Wm and Wf+Wm between the first and third electrode fingers that are disposed alternately is larger than a value twice the thickness T of the piezoelectric thin film.

Abstract: A resonant device including a stack of a first metal layer, a piezoelectric material layer, and a second metal layer formed on a silicon substrate, a cavity being formed in depth in the substrate, the thickness of the silicon above the cavity having at least a first value in a first region located opposite to the center of the stack, having a second value in a second region located under the periphery of the stack and having at least a third value in a third region surrounding the second region, the second value being greater than the first and the third values.

Abstract: A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 ?m or less).

Abstract: A bulk acoustic wave (BAW) filter device includes at least one first serial BAW resonator, at least one first shunt BAW resonator, at least one second serial BAW resonator or at least one second shunt BAW resonator. The resonance frequencies of the first and the second serial BAW resonators or the resonance frequencies of the first and the second shunt BAW resonators are detuned with respect to each other.

Abstract: A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wher

Abstract: A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.

Abstract: A thin-film BAW filter has at least one CRF section and at least one ladder or grating filter section, with the CRF section having at least two coupled resonators, with the CRF section and the ladder or grating filter section being integrated on a common substrate, in order to produce a thin-film BAW filter. In a method for production of a thin-film BAW filter, having at least one CRF section and at least one ladder or grating filter section, the CRF section has at least two coupled resonators and the CRF section and the ladder or grating filter section are integrated on a common substrate.

Abstract: A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.

Abstract: Disclosed are piezoelectrically-transduced micromachined bulk acoustic resonators fabricated on a polycrystalline diamond film deposited on a carrier substrate. Exemplary resonators comprise a substrate having a smooth diamond layer disposed thereon. A piezoelectric layer is disposed on the diamond layer and top and bottom electrodes sandwich the piezoelectric layer. The resonant structure comprising the diamond layer, piezoelectric layer and electrodes are released from the substrate and are free to vibrate. Additionally, one or more sensing platforms may be coupled to the substrate to form a mass sensor.

Abstract: A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.

Abstract: A highly integrated electrical module is specified which comprises a filter circuit and a balun circuit. The space requirement is reduced by circuit components of the balun circuit being arranged at least in part on an inner side of the housing of the filter circuit.

Abstract: According to one embodiment, a method of forming a segment of a layer of material, where the segment of the layer of material has at least one tapered sidewall, is disclosed, where the method includes forming a mask over the layer of material. The method includes etching the mask and the layer of material in an etch process by controlling an etch rate of the mask and an etch rate of the layer of material so as to form the segment of the layer of material with the at least one tapered sidewall. A first etch chemistry is used to etch the mask and a second etch chemistry is used to etch the layer of material. The etch rates of the mask and the layer of material can be controlled by controlling a ratio of the first and second etch chemistries. The method can be utilized to fabricate BAW structures.

Abstract: A resonator operating with bulk acoustic waves includes a resonator stack. The resonator stack includes a resonator area configured to allow propagation of an acoustic main mode and an acoustic secondary mode. The resonator stack also includes an acoustic mirror that includes a first partial mirror for locking in the acoustic main mode in the resonator area and a second partial mirror for locking in the secondary mode in a resonator space.

Abstract: A sensor senses an environmental condition. The sensor includes a film bulk acoustic resonator that includes a layer of material that causes resonant frequency and/or quality factor shifts of the film bulk acoustic resonator in response to changes in the environmental condition. The environmental condition may be relative humidity and the layer of material may be a moisture absorptive material.

Abstract: A radio filter has a band pass filter for passing a desired band of signal frequencies and a band stop filter for reducing the passing of a band of undesired signal frequencies. The filter comprises an input terminal, an output terminal, and a filter having a multiple of transmission lines arranged between said input and output terminal which filters input signals through said input terminal to pass signals of a given frequency band. A ground is connected to said transmission lines at first ends of said multiple of transmission lines and acoustic impedance elements are connected between said ground layer and second ends of said multiple transmission lines for providing a stop band filter function of the input signals, and whereby the input signal after band pass filtering and stop band filtering is provided at said output terminal.

Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.

Abstract: The electronic apparatus comprises a display portion and a quartz crystal oscillator at least, and said electronic apparatus comprises at least one quartz crystal oscillator. Also, the at least one oscillator comprises a quartz crystal oscillating circuit comprising an amplification circuit and a feedback circuit. The feedback circuit is constructed by a flexural mode, quartz crystal tuning fork resonator or a length-extensional mode quartz crystal resonator and for example, the quartz crystal tuning fork resonator comprising tuning fork tines and tuning fork base that are formed integrally, is shown with novel shape and electrode construction. Also, the quartz crystal tuning fork resonator, capable of vibrating in a fundamental mode and having a high frequency stability can be provided with a small series resistance and a high quality factor, even when the tuning fork resonator is miniaturized.

Abstract: A surface acoustic wave device includes a base substrate, first and second surface acoustic wave filters mounted on a surface of the base substrate, and a sealer provided on the surface of the base substrate and covering the first and second surface acoustic wave filters. The first and second surface acoustic wave filters include first and second piezoelectric substrates. The second piezoelectric substrate is located away from the first piezoelectric substrate via a gap. This surface acoustic wave device reduces inter-modulation.

Abstract: A co-planar waveguide structure is integrated with an upwardly extending resonant pillar to produce transfer cells that provide controlled transmission of electricity between adjacent structures of the co-planar waveguide in order to produce easily fabricated electronic devices operating at megahertz and gigahertz speeds for filtration, modulation, rectification, and mixing of high-frequency signals.

Abstract: Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.

Abstract: Micro-electromechanical devices include a temperature-compensation capacitor and a thin-film bulk acoustic resonator having a first terminal electrically coupled to an electrode of the temperature-compensation capacitor. The temperature-compensation capacitor includes a bimorph beam having a first electrode thereon and a second electrode extending opposite the first electrode. This bimorph beam is configured to yield an increase in spacing between the first and second electrodes in response to an increase in temperature of the micro-electromechanical device. This increase in spacing between the first and second electrodes leads to a decrease in capacitance of the temperature-compensation capacitor. Advantageously, this decrease in capacitance can be used to counteract a negative temperature coefficient of frequency associated with the thin-film bulk acoustic resonator, and thereby render the resonant frequency of the micro-electromechanical device more stable in response to temperature fluctuations.

Abstract: Bulk acoustic resonators with multi-layer electrodes for Bulk Acoustic Wave (BAW) resonator devices. Various electrode combinations are disclosed. The invention provides a better compromise at resonant frequencies from 1800 MHz to 4 GHz in terms of keff2 and resistance than state of the art solutions using either Mo, or a bilayer of Al and W.

Abstract: A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.

Abstract: A component (1) is proposed wherein the suspension of the component (1) is effected in a stress-reduced manner. The component (1) can rest on a membrane (4) or be held by a spring element (2). The membrane (4) or the spring element (2) is situated above a depression (6) or an opening (7) partially spanned by the membrane (4). Preferably, the membrane (4) has a modulus of elasticity that is less than or equal to the modulus of elasticity of the component (1) or of the substrate (3). The component (1) can be covered with metal electrodes (10) wholly or partially over the area on two sides.

Abstract: An object is to provide a film bulk acoustic resonator capable of improving resonant characteristics by reducing the generation of a standing wave to be caused by a transverse-mode acoustic wave to a minimum. In a film bulk acoustic resonator including a resonant portion A having a piezoelectric material layer 3 sandwiched between a first electrode 2 and a second electrode 4, the resonant portion A is configured to have a planar shape that is an ellipse having a part thereof cut off along a straight line L. The straight line L intersects at least one of a minor axis and a major axis of the ellipse, and preferably intersects both the minor axis and the major axis, and passes through the center of the ellipse.

Abstract: An electromagnetic composite metamaterial including an electromagnetic medium and a plurality of spaced electromechanical resonators disposed in or on the electromagnetic medium configured to control electromagnetic wave propagation properties in the electromagnetic composite metamaterial.

Abstract: A piezoelectric thin-film resonator includes: a lower electrode that is formed on a substrate; a piezoelectric film that is formed on the substrate and the lower electrode; an upper electrode that is formed on the piezoelectric film, with a portion of the piezoelectric film being interposed between the lower electrode and the upper electrode facing each other; and an additional film that is formed on the substrate on at least a part of the outer periphery of the lower electrode at the portion at which the lower electrode and the upper electrode face each other, with the additional film being laid along the lower electrode.

Abstract: An integrated circuit includes at least one interconnection level and an acoustic resonator provided with an active element and a support. The includes at least one bilayer assembly having a layer of high acoustic impedance material and a layer of low acoustic impedance material. The support further includes a protruding element arranged on a metallization level of the interconnection level, making it possible to produce an electrical contact between an interconnection level and the active element of the acoustic resonator.

Abstract: An electrical circuit that includes an electric four-terminal network is disclosed. The electric four-terminal network includes a first electrical port with a first terminal and a second terminal and a second electrical port with a first terminal and a second terminal. The electrical circuit also includes a first shunt branch between the second terminal of first electrical port and ground.

Abstract: Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an electrically-isolating acoustic coupler connected between the modulator and the demodulator. The electrically-isolating acoustic coupler comprises series-connected decoupled stacked bulk acoustic resonators (DSBARs).

Abstract: There is provided a piezoelectric thin film resonator that decreases only transverse mode waves selectively while maintaining resonance characteristics due to original thickness longitudinal vibration. The piezoelectric thin film resonator includes: a piezoelectric film (14); a first electrode (15a) formed on a first principal surface of the piezoelectric film (14); and a second electrode (13) formed on a second principal surface of the piezoelectric film (14) opposite to the first principal surface. The resonator has a resonance region (20) where the first electrode (15a) and the second electrode (13) are opposed to each other. An electrically discontinuous portion (18a) that is insulated from the first electrode (15a) is provided on the first principal surface of the piezoelectric film (14) in the resonance region (20), and the electrically discontinuous portion (18a) is surrounded by the first electrode (15a) on the first principal surface.

Abstract: A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 ?m or less).

Abstract: A device includes at least one piezoacoustic resonator element (21-29) having at least one piezoelectric layer (21a-29a) and two electrodes (21b-29b, 21c-29c) applied to the piezoelectric layer (21a-29a). The piezoacoustic resonator element (21-29) is configured in such a manner that, when a voltage is applied to the piezoelectric layer (21a-29a) by electrodes (21b-29b, 21c-29c), a bulk wave of the piezoelectric layer (21a-29a) is induced with a resonant frequency. The device also includes a heating device with a heating element (211-219), integrated into the piezoacoustic resonator element (21-29), for controlling the working temperature of the device.

Abstract: A piezoelectric resonator includes an acoustic reflective layer including first acoustic impedance sub-layers made of a material with relatively low acoustic impedance and second acoustic impedance sub-layers made of a material with relatively high acoustic impedance. A thin-film laminate is disposed on the acoustic reflective layer. The thin-film laminate includes a piezoelectric thin-film, a first electrode, a second electrode greater than the first electrode, and a mass-adding film. The second electrode is disposed on the acoustic reflective layer. The mass-adding film is disposed in at least one portion of a region outside a piezoelectric vibrational section and extends around the first electrode. The second electrode extends over the piezoelectric vibrational section to a region containing the mass-adding film.

Abstract: A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

Abstract: Disclosed is a system and method for controlling a resonance frequency of a Film Bulk Acoustic Resonator (FBAR) device. The system includes at least one switching capacitor coupled to the FBAR device and a modulator. The at least one switching capacitor includes at least one capacitor and a switch configuration disposed in series with the FBAR device and the at least one capacitor, which is switch configuration capable of opening and closing connection of the at least one capacitor with the FBAR device. The modulator is coupled to the switch configuration, which generates a switching condition signal based on the manufacturing variation in the FBAR device and the environmental effects on the FBAR device. The switch configuration performs opening and closing of the connection of the at least one capacitor and the FBAR device based on the switching condition signal.

Abstract: Disclosed is a resonator that is mounted on a substrate, operates with acoustic bulk waves, and is disposed above an acoustic mirror. According to the invention, the basic mode of the acoustic bulk wave that can be generated in the resonator is suppressed while a higher mode can be excited in parallel and be utilized for the resonator by adjusting the acoustic mirror.

Abstract: A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film.

Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Abstract: Provided is a thin film piezoelectric resonator which includes a piezoelectric resonator stack (12) having a piezoelectric layer (2), an upper electrode (10) and a lower electrode (8); and a substrate (6) which supports the piezoelectric resonator stack. The piezoelectric resonator stack (12) is provided with a vibration region (18) wherein the upper electrode (10) and the lower electrode (8) face each other through a piezoelectric layer (2) and primary thickness vertical vibration can be performed; and a supporting region (19) supported by the substrate (6). The vibration region (18) has an oval shape with a ratio a/b of 1.1 or more but not more than 1.7, where (a) is a long diameter and (b) is a short diameter. The piezoelectric resonator stack (12) is further provided with an upper dielectric layer (20) formed on the upper electrode (10).

Abstract: An integrated device is constructed by integrating an FBAR and a tunable capacitor. The integrated device includes a substrate; a resonator formed on the substrate; a driving electrode layer formed on the substrate apart from the resonator; a first electrode layer formed upwardly apart from the substrate and facing the resonator; and a second electrode layer formed upwardly apart from the substrate and facing the driving electrode layer, the second electrode layer stepped from the first electrode layer. Accordingly, the integrated device can increase the tuning range and mitigate the parasitic resistance.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter.

Abstract: Disclosed is a package having a thin film bulk acoustic resonator (FBAR). The package may be utilized for suppressing spurious resonance occurred during operation of the FBAR. The package includes a negative impedance converter (NIC) operatively coupled to the FBAR through at least one interconnect. The at least one interconnect includes transmission lines and bonding wires. The package further includes a filter operatively coupled to the NIC. The filter exhibits a parallel resonance at a predefined frequency. The parallel resonance exhibited by the filter is converted to a series resonance by the NIC such that the series resonance of the NIC is responsible for suppressing the spurious resonance occurring during the operation of the FBAR.

Abstract: Disclosed are micromechanical resonator apparatus having features that permit multiple resonators on the same substrate to operate at different operating frequencies. Exemplary micromechanical resonator apparatus includes a support substrate and suspended micromechanical resonator apparatus having a resonance frequency. In one embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a piezoelectric layer formed on the suspended device substrate, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer. In another embodiment, the suspended micromechanical resonator apparatus comprises a device substrate that is suspended from and attached to the support substrate, a lower electrode formed on the suspended device substrate, a piezoelectric layer formed on the lower electrode, and a plurality of interdigitated upper electrodes formed on the piezoelectric layer.

Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the substrate and the lower electrode, and an upper electrode formed on the piezoelectric film and opposing the lower electrode, an upper electrode formed on the piezoelectric film. The upper electrode has a main portion and an extended portion connected to the main portion, the main portion opposing the lower electrode and an opening disposed between the substrate and the lower electrode, the extended portion having a portion which opposes the opening and the substrate.

Abstract: A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator.

Abstract: Three or more piezoelectric resonators having resonance frequencies different from one another are realized on the same substrate. First through third frequency adjustment layers of first through third piezoelectric resonators, respectively, provided on the same substrate 101 are formed by varying, among the frequency adjustment layers, the ratio of area (depressions 109 and 110) to be etched to area not to be etched.

Abstract: Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an electrically-isolating acoustic coupler connected between the modulator and the demodulator. The acoustic coupler comprises no more than one decoupled stacked bulk acoustic resonator (DSBAR). An electrically-isolating acoustic coupler based on a single DSBAR is physically small and is inexpensive to fabricate yet is capable of passing information signals having data rates in excess of 100 Mbit/s and has a substantial breakdown voltage between its inputs and its outputs.