Abstract: Printing a screened image includes a computer for converting a contone image to a digital image. A digital front end provides a screening tile, a dither magnitude curve, a spot function for each of the cells in the screening tile and a displacement vector for each of the cells. The digital front end displaces the center of each cell spot function and constructs a halftone image from the contone image and the screening tile by comparing value of each pixel from the contone image to a corresponding threshold value from the screening tile. If the pixel value exceeds the threshold value set a corresponding pixel in the halftone image to one otherwise set the corresponding pixel in the halftone image to zero. An imaging system prints the halftone image on a substrate.

Abstract: A method for use in a wireless transmit receive unit (WTRU) for two-stage reordering of received protocol data units (PDUs). The method comprising receiving PDUs from Node-Bs, wherein each of the received PDUs has a transmission sequence number (TSN), reordering the received PDUs from Node-Bs using the TSN in a MAC layer in different reordering queues, delivering the received PDUs from reordering queues to one logical channel in the RLC layer, reordering the received PDUs in the RLC layer based on a sequence number (SN), starting a timer when at least a RLC PDU is missing based on SN of the RLC PDU, and transmitting a status report indicating a missing RLC PDU based on SN of the RLC PDU if the timer expires, wherein transmission of the status report is delayed if a RLC PDU is missing based on SN of the RLC PDU and the timer is running.

Abstract: An object of the present invention is to improve the passing characteristic at high temperature in a ladder-type elastic wave filter and a duplexer including the filter. The ladder-type elastic wave filter of the present invention includes a piezoelectric substrate, a first series elastic-wave resonator formed on the piezoelectric substrate and connected in series between the input and output terminals of the filter, a parallel elastic-wave resonator formed on the piezoelectric substrate and connected in parallel between the series elastic-wave resonator and the ground terminal, and a dielectric film formed on the piezoelectric substrate so as to cover the first series elastic-wave resonator. The piezoelectric substrate is formed of a material with a negative temperature coefficient.

Abstract: An SAW filter and a duplexer excellent in electrical characteristics will be provided. An SAW filter has a piezoelectric substrate 40, a surface acoustic wave element 10 having a first IDT electrode 1 on the piezoelectric substrate 40, a first signal line 31 electrically connected to the first IDT electrode 1, and a ring-shaped reference potential line 9 which has a first intersecting portion intersecting with the first signal line 31 through an insulation member 41 and surrounds the surface acoustic wave element 10.

Abstract: A SAW filter circuit having improved ESD resistance is specified, in which a series interconnection composed of SAW resonators is interconnected between a first signal port and a dual-mode SAW filter port. The static capacitance of the series interconnection is at most four times the static capacitance of the dual-mode SAW filter transducers interconnected therewith.

Abstract: A compact microwave distributed-element dual-mode bandpass filter is provided, comprising a dual-mode resonator and a signal input port and a signal output port coupled electrically to the dual-mode resonator respectively; wherein, the dual-mode resonator comprises a main stripline with a center-loaded short-circuited stub, the main stripline is reasonably folded in both vertical and horizontal directions and is reasonably folded into a first layer, a second layer, a third layer and a fourth layer; a symmetrical plane is provided between the second layer and the third layer, while the first layer and the fourth layer are symmetrical to each other relative to the symmetrical plane, the second layer and the third layer are symmetrical to each other relative to the symmetrical plane as well; the center-loaded short-circuited stub is located on the symmetrical plane, and the symmetrical plane can be treated as a virtual ground at odd-mode resonant frequency.

Abstract: A surface acoustic wave device includes: a pair of comb-like electrodes formed on a piezoelectric substrate, each of which includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other com-like electrode, respectively; and additional films extending in the form of a strip in a first direction in which the electrode fingers are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other comb-like electrode.

Abstract: A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (?1.5°???1.5°, 117°???142°, 42.79°?|?|?49.57°); one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is ?, and a depth of the grooves is G, “0.01??G” is satisfied.

Abstract: A ladder-type-like filter circuit is specified with improved filter behavior. Inductive elements that interconnect parallel resonators with ground are electromagnetically coupled to one another.

Abstract: An elastic wave surface acoustic wave duplexer includes an antenna terminal, a transmission filter, a reception filter, and a plurality of elastic wave resonators connected in series between the antenna terminal and the reception filter. The reception filter is a longitudinally coupled resonator-type surface acoustic wave filter including a plurality of IDT electrodes and arranged along a propagation direction of elastic wave. A combined capacitance of the plurality of surface acoustic wave resonators is smaller than a capacitance of the IDT electrodes and included in the plurality of IDT electrodes and connected to the antenna terminal.

Abstract: An elastic wave filter includes electrode fingers, a first busbar and a second busbar, and inclined electrode portions each having a narrower distance between the electrode fingers from the first busbar toward the second busbar. The elastic wave filter includes a dummy electrode disposed in at least one of the input-side IDT electrode portion and the output-side IDT electrode portion to suppress reflection of a diffracted elastic wave by the busbar and to suppress spurious response at an end portion in a frequency pass-band. The dummy electrode has a width dimension and a pitch that are determined such that none of a period shorter than a shortest period of the electrode fingers and a period longer than a longest period of the electrode fingers is satisfied.

Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: In an elastic wave demultiplexer having excellent isolation characteristics, a first ground wiring electrode is connected to a second ground wiring electrode, via first ground via-hole electrodes. The first ground wiring electrode is connected to ground land electrodes via second ground via-hole electrodes. The second ground wiring electrode is connected to a ground terminal via third ground via-hole electrodes. The number of the first ground via-hole electrodes is greater than the number of the second ground via-hole electrodes and the number of the third ground via-hole electrodes.

Abstract: An antenna duplexer includes first and second filters connected to an antenna terminal. The first filter has a passband of a low frequency band. The second filter has a passband of a high frequency band. The second filter is a ladder-type filter including series-arm resonators and parallel-arm resonators. At least one parallel-arm resonator out of the parallel-arm resonators has a main resonance and an auxiliary resonance. Attenuation poles caused by the main resonance and the auxiliary resonance are within the low frequency band. This antenna duplexer has a high attenuation characteristic and a high isolation characteristic while maintaining a low insertion loss.

Abstract: A method for manufacturing piezoelectric resonator devices according to the present invention includes the following steps: a wafer forming step of preparing a thick-walled wafer 30 integrally formed with multiple lower lid members 3; a bonding step of bonding crystal resonator plates 2 to one main surface 31 of the wafer 30 via a bonding material 5 and bonding upper lid members 4 on the crystal resonator plates via a bonding material 5; a thinning step of thinning the wafer 30 from the other main surface 37 of the wafer; an external terminal forming step of forming external terminals on the other main surface of the thinned wafer; and a dividing step of cutting the wafer between each adjacent pair of crystal resonators so that multiple crystal resonators are obtained.

Abstract: A surface acoustic wave SAW (SAW) device has a substrate and a filter provided at the substrate. The filter has a plurality of interdigital transducers (IDT) electrodes arranged along a propagation direction of a SAW. Each of the plurality of IDT electrodes has an electrode finger group including a plurality of electrode fingers which extent in a direction orthogonal to the propagation direction and are arranged along the propagation direction. At least one of the plurality of IDT electrodes has a wide pitch section including an adjacent first and second electrode finger among the plurality of electrode fingers. The interval between the first electrode finger and the second electrode finger is larger than the average value of the intervals between the remaining electrode fingers of the plurality of electrode fingers.

Abstract: A duplexer includes a reception filter that is connected between a reception terminal and an antenna terminal and includes one or a plurality of series resonators that are acoustic wave resonators, and a transmission filter that is connected between a transmission terminal and the antenna terminal and includes one or a plurality of acoustic wave resonators, a resonance frequency of a first series resonator that is one of the one or the plurality of series resonators and is closest to the antenna terminal in the reception filter being higher than an upper limit frequency of a reception band of the reception filter.

Abstract: An antenna duplexer includes a transmission filter which operates in a transmission frequency band and has a transmission filter output. A reception filter operates in a reception frequency band and has a reception filter output. An antenna connection is connected to the transmission filter output and a matching element is connected between the antenna connection and the reception filter input. The circuit formed from the transmission filter, reception filter and matching element attenuates transmission signals in a frequency band whose frequencies f are in the interval 0.50*f0<=f<=0.75*f0, where f0 is the mid-frequency of the reception frequency band.

Abstract: Provided is a high frequency module capable of reducing size and cost. A high frequency module includes an LC filter having an inductor formed through a thin film process and a capacitor also formed through a thin film process, and a piezoelectric resonator that is connected in series to the LC filter and serves as a trap filter having a resonant frequency at the outside of a passing band of the LC filter.

Abstract: An elastic wave filter device includes a one-port elastic wave resonator and an elastic wave filter unit connected in series to the one-port elastic wave resonator. The one-port elastic wave resonator is connected in parallel to an inductance. In the elastic wave filter device, fr1>f0 is satisfied, where f0 is the center frequency of a passband of the elastic wave filter unit, and fr1 is a resonant frequency of the one-port elastic wave resonator.

Abstract: A high-frequency module includes a multilayer substrate, a filter substrate, a cover layer, a connection electrode, and inductors. The filter substrate includes a first principal surface on which an IDT electrode included in a filter unit is disposed, and the first principal surface faces a mounting surface of the multilayer substrate. The cover layer is spaced apart from and opposite to the first principal surface of the filter substrate. The connection electrode connects the multilayer substrate and the filter substrate. One of the inductors is connected between the filter unit and a first external connection terminal. Another one of the inductors is connected between the filter unit and the ground. The inductors are disposed inside the multilayer substrate. The inductors are inductively coupled to each other.

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

Abstract: A ladder surface acoustic wave filter includes a series arm connecting an input terminal and an output terminal, at least one parallel arm connecting the series arm and a ground terminal, at least one series arm resonator provided in the series arm, and at least two parallel arm resonators provided in at least one parallel arm and connected to each other in series. In the ladder surface acoustic wave filter, a connection point between at least the two parallel resonators connected to each other in series is grounded through an inductor.

Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (?1°???1°, 117°???142°, 42.79°?|?|?49.57°), which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01??G??(1), where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy ? of the IDT satisfy the following expression: - 2.5 × G ? + 0.675 ? ? ? - 2.5 × G ? + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160?N?220??(19).

Abstract: A longitudinally-coupled-resonator-type surface acoustic wave filter includes an unbalanced terminal, balanced terminals, a piezoelectric substrate, a first surface acoustic wave filter unit, a second surface acoustic wave filter unit, an unbalanced signal wiring line, balanced signal wiring lines, a pair of interstage wiring lines that connect the first surface acoustic wave filter unit and the second surface acoustic wave filter unit to each other, and ground wiring lines. The first surface acoustic wave filter unit includes a first IDT and a pair of a second IDT and a third IDT. The first IDT includes a pair of first divided comb tooth shaped electrodes obtained by dividing a comb tooth shaped electrode on the side spaced from the unbalanced terminal along a central axis.

Abstract: A signal separation apparatus includes a piezoelectric substrate on which a transmission filter and a reception filter are provided. The reception filter includes first, second and third longitudinally coupled resonator-type elastic wave filter devices and the first, second and third longitudinally coupled resonator-type elastic wave filter devices each including a two-stage cascade connection structure. The signal separation apparatus further includes virtual ground wiring lines that are not connected to a ground potential and that connect ground terminals of adjacent longitudinally coupled resonator-type elastic wave filter units to each other on at least one of a first, second, and third group-A longitudinally coupled resonator-type elastic wave filter units side and a first, second, and third group-B longitudinally coupled resonator-type elastic wave filter units side.

Abstract: An acoustic wave device includes: a chip; an acoustic wave element formed on a principal surface of the chip; a first pad formed on the principal surface of the chip and electrically connected to the acoustic wave element; a substrate having a principal surface facing the principal surface of the chip; a second pad formed on the principal surface of the substrate; a first bump formed between the first pad and the second pad and electrically connecting the first pad and the second pad; and a second bump formed between the chip and the substrate and making direct contact with the substrate.

Abstract: An acoustic wave filter includes a piezoelectric substrate, an insulating pattern that has higher thermal conductivity than the piezoelectric substrate formed on the piezoelectric substrate, at least two pads formed on the piezoelectric substrate or the insulating pattern, at least one pad formed on the insulating pattern, at least one acoustic resonator formed on the insulating pattern, and at least one acoustic resonator directly formed on the piezoelectric substrate.

Abstract: A resonator includes: a first comb-shaped electrode including a first bus bar, first electrode fingers coupled to the first bus bar and extending in an extension direction, and first dummy electrode fingers coupled to the first bus bar; and a second comb-shaped electrode including a second bus bar, second electrode fingers coupled to the second bus bar, extending in the extension direction, and facing the first dummy electrode fingers through first gaps, and second dummy electrode fingers coupled to the second bus bar and facing the first electrode fingers through second gaps, wherein 0.5???D where ?D represents a distance in the extension direction between at least two gaps that are at least adjoining two of the first gaps or/and at least adjoining two of the second gaps, and ? represents pitches of the first electrode finger and the second electrode finger.

Abstract: A power device comprises an output port and at least one first acoustic pathway and one second acoustic pathway, each acoustic pathway comprising at least one first input acoustic wave transducer connected to an input port, and an output acoustic wave transducer connected to the output port. Each acoustic pathway further comprises a floating acoustic wave transducer connected to a floating port; the input transducer and the output transducer being separated by a distance equal to (2m+1)?/4 with m an integer and ? the propagation wavelength; the input transducer and the floating transducer being separated by a distance equal to (2n+1) ?/2 with n an integer; each output transducer being connected to the output port, said power device being a combiner.

Abstract: An acoustic wave device includes a first longitudinally-coupled acoustic wave filter having interdigital transducer (“IDT”) electrodes arranged in a propagation direction of acoustic wave, and a second longitudinally-coupled acoustic wave filter having IDT electrodes arranged in a propagation direction of acoustic wave. In the IDT electrodes of the first longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an in-phase relation. In the IDT electrodes of the second longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an anti-phase relation. This acoustic wave device has an excellent attenuation characteristic while maintaining a preferable insertion loss.

Abstract: A filter device is provided for filtering signals. The filter device includes multiple series resonators, multiple shunt resonators and multiple cross-coupling circuits. The series resonators are connected in series between an antenna and one of a transmitter or a receiver. The shunt resonators are respectively connected between at least one of the series resonators and a ground voltage. The cross-coupling circuits are configured to bypass at least two series resonators of the multiple series resonators and at least one shunt resonator of the multiple shunt resonators.

Abstract: An acoustic wave device includes: a substrate; a dielectric film formed on the substrate; opposing comb-shaped electrodes located between the substrate and the dielectric film, each of the opposing comb-shaped electrodes including an electrode finger, wherein at least one of the substrate and the dielectric film is a piezoelectric substance, an upper surface of the dielectric film, which is located above a gap between a tip of an electrode finger of one of the opposing comb-shaped electrodes and the other of the opposing comb-shaped electrodes, is inclined against an upper surface of the substrate in an extension direction of the electrode finger, and an inclination angle of the upper surface of the dielectric film against the upper surface of the substrate is equal to or larger than 30° and equal to or smaller than 50°.

Abstract: A surface acoustic wave device comprises a piezoelectric substrate (1), at least one inter-digital transducers (IDT) (2) provided on the piezoelectric substrate, at least one elongated electrode pad (4) electrically connected to the IDT, and at least one stud bump (5) disposed on the electrode pad such that an LC component of the surface acoustic wave device has a predetermined value.

Abstract: A filter device includes a piezoelectric substrate, an IDT arranged on a major surface of the piezoelectric substrate to define a surface acoustic wave resonator, a wiring electrode that is electrically connected to the IDT, and an acoustic member located on a major surface of the piezoelectric substrate near or adjacent to the IDT and that has an acoustic impedance different from that of the piezoelectric substrate. The wiring electrode that is to be disposed in the vicinity of the IDT is located on the acoustic member.

Abstract: An elastic wave device includes a resonator and an inductor. One end of the inductor is connected to the resonator, and the other end of the inductor is connected to a ground electrode or a signal electrode. The elastic wave device includes a chip and a mounting substrate. The chip includes a piezoelectric substrate and an interdigital transducer electrode provided on the piezoelectric substrate so define the resonator. The chip is mounted on the mounting substrate. The inductor is provided to the mounting substrate. A dummy electrode to which the one end side of the inductor is connected and the ground electrode or the signal electrode are provided on a surface of the mounting substrate that is opposite to the chip.

Abstract: Inertial sensor having a body with first and second cavities on opposite sides thereof, a sensing element in the first cavity, electronic circuitry in the second cavity, electrical conductors interconnecting the sensing element and the circuitry, and leads connected electrically to the circuitry and extending from the body for mounting the sensor and making connections with the circuitry.

Abstract: A surface acoustic wave device includes a piezoelectric substrate including an interdigital transducer located on one principal surface thereof, an insulating layer arranged around the interdigital transducer, a cover layer arranged over the insulating layer and the interdigital transducer, and a columnar electrode penetrating through the insulating layer and the cover layer, and connected to the interdigital transducer through a connection wiring, wherein a buffer layer is arranged on the other principal surface of the piezoelectric substrate.

Abstract: The filter includes one or more series resonators and one or more parallel resonators. An inductance is connected in series to at least a parallel resonator of the parallel resonators, and a antiresonance frequency of the parallel resonator to which the inductance is connected in series is equal to or higher than that of the series resonators. The duplexer, the communication module and the communication device are provided with the filter.

Abstract: An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the piezoelectric substrate, a first dielectric film covering the upper surface of the piezoelectric substrate to cover the IDT electrode, and a second dielectric film covering an upper surface of the first dielectric film. The second dielectric film includes a thin portion positioned in a tip region of electrode fingers of the IDT electrode and a thick portion which is positioned in a middle region of the IDT electrode and is thicker than the thin portion. The acoustic wave device suppresses spurious emission and has superior passband characteristics.

Abstract: An acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output. The difference between the lowest resonant frequency and the highest resonant frequency of a plurality of resonators in the filter is at least 1.25 times the frequency separation of the resonator with the highest resonant frequency in the plurality of resonators. Another acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output to form a passband. The frequency difference between a local minimum or a local maximum of a return loss magnitude of the acoustic microwave filter and the edge of the passband is at least once the frequency separation of the resonator with the highest resonant frequency.

Abstract: A SAW filter includes at least four electrically interconnected DMS tracks. First and second tracks of the at least four DMS tracks are connected in parallel in opposite directions to form a first filter element. The first and second tracks have two resonant frequencies that are offset from one another from track to track within the first filter element such that they define a common passband by virtue of a lower-frequency resonance of the first track being in phase at the same frequency as a higher-frequency resonance of the second track. Third and fourth tracks of the at least four DMS tracks can be connected in a similar fashion to form a second filter element. The passbands of the first and second filter elements are offset from one another and each comprise one of two channels of a two-channel filter.

Abstract: In a surface acoustic wave device, a plurality of surface acoustic wave elements include piezoelectric bodies having the same cut-angle. A propagation azimuth of a surface acoustic wave in at least one of surface acoustic wave elements is different from a propagation azimuth of a surface acoustic wave in at least another one of the surface acoustic wave elements. In each of the surface acoustic wave elements, a confinement layer configured to confine the surface acoustic wave inside the piezoelectric body is disposed on the piezoelectric body at the side opposite to the side where an electrode is located.

Abstract: An elastic wave splitter includes an antenna terminal, a transmission terminal and reception terminals. A transmission filter is connected between the antenna terminal and the transmission terminal. A reception filter is connected between the antenna terminal and the reception terminals. The transmission filter and the reception filter are each defined by an elastic wave filter. A resonant circuit is connected between the antenna terminal and a ground potential. The resonant circuit includes a surface acoustic wave resonator and a capacitor connected in series with the surface acoustic wave resonator. A resonant frequency of the resonant circuit is positioned in a frequency band of an interference wave that causes intermodulation distortion to be generated.

Abstract: In a ladder-type elastic wave filter, a resonance frequency of a second parallel resonator is higher than that of a series resonator and lower than an antiresonance frequency of a series resonator. With this configuration, an attenuation pole is formed by the second parallel resonator at a frequency region lower than an attenuation pole formed by the series resonator in a frequency region higher than the passband of the ladder-type elastic wave filter.

Abstract: A surface acoustic wave filter and a duplexer are provided. In a surface acoustic wave filter, on a piezoelectric substrate, a first IDT electrode composed of an input/output electrode and a first floating electrode, and a second IDT electrode composed of a ground electrode and a second floating electrode are arranged, and are connected in series to each other via the first floating electrode and the second floating electrode to form IDTs. In two serial IDTs arranged next to each other, an electrode finger of the input/output electrode in the first IDT electrode of one serial IDT is arranged next to an electrode finger of the ground electrode in the second IDT electrode of the other serial IDT.

Abstract: A branching filter includes a ladder-type elastic wave filter unit connected between an antenna terminal and a transmission signal terminal and a longitudinally coupled resonator-type elastic wave filter unit connected between an antenna terminal and first and second balanced reception signal terminals while maintaining the isolation characteristics between the transmission signal terminal and the first and second reception signal terminals. In a duplexer, a transmission signal propagation direction is perpendicular or substantially perpendicular to each of a first reception signal propagation direction and a second reception signal propagation direction.

Abstract: An inexpensive compact band rejection filter realizes a high sharpness of a filter characteristic at ends of passbands and has a large attenuation. In the band rejection filter, at least one of a plurality of elastic wave resonators, which contributes to formation of a transition band, has a propagation angle larger than those of the other elastic wave resonators. Accordingly, the at least one of the plurality of elastic wave resonators which contributes to the formation of the transition band has an electromechanical coupling coefficient that is smaller than electromechanical coupling coefficients of the other elastic wave resonators.

Abstract: An elastic-wave filter device includes a reception filter section including a longitudinally coupled resonator-type elastic-wave filter section that has a balanced-to-unbalanced conversion function and has improved common-mode isolation characteristics. Among IDT electrodes of a filter section, each of the other comb-shaped electrode of a first IDT electrode including a pair of comb-shaped electrodes, one of which is connected to a first balanced-signal terminal, and the other comb-shaped electrode of a second IDT electrode including a pair of comb-shaped electrodes, one of which is connected to a second balanced-signal terminal, is connected to one of ground electrodes that are provided on a piezoelectric substrate. Inductors are provided on the piezoelectric substrate, and each inductor is connected between the other comb-shaped electrode of one of the first and second IDT electrodes and one of the ground electrodes.

Abstract: A method for producing an electric component including a dielectric layer on a substrate, includes the method steps of applying a metallic layer to the substrate and oxidizing the metallic layer to form a dielectric layer, wherein at least one partial region of the metallic layer is fully oxidized through the entire thickness of the layer.