Abstract: Acoustic resonators are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT includes: a first busbar and a second busbar disposed on respective portions of the piezoelectric plate other than the diaphragm; a first set of elongate fingers extending from the first bus bar onto the diaphragm; and a second set of elongate fingers extending from the second bus bar onto the diaphragm, the second set of elongate fingers interleaved with the first set of elongate fingers.

Abstract: Acoustic resonators and filter devices, and methods for making acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern formed is formed on the front surface of the piezoelectric plate, including an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. An insulating layer is formed between the piezoelectric plate and portions of the conductor pattern other than the interleaved fingers.

Abstract: An acoustic wave filter device includes first and second acoustic wave filters provided on a piezoelectric substrate, an insulating layer that is provided on the piezoelectric substrate and has a smaller dielectric constant than the piezoelectric substrate, a first wiring conductor electrically connected to an electrode of the first acoustic wave filter, a second wiring conductor electrically connected to an electrode of the second acoustic wave filter, the first wiring conductor and the second wiring conductor facing each other on the insulating layer in plan view, and a ground conductor located between the insulating layer and the piezoelectric substrate in a region A circumscribing the first wiring conductor and the second wiring conductor on the insulating layer in plan view.

Abstract: A surface acoustic wave resonator comprises interdigital transducer (IDT) electrodes disposed on an upper surface of a piezoelectric substrate between first and second reflector gratings each including reflector electrodes. The IDT electrodes include a central region having a first width in a direction perpendicular to an extension direction of the IDT electrodes and edge regions each having a second width on opposite sides of the central region. The IDT electrodes have a lesser average pitch in the central region than an average pitch of the IDT electrodes in each of the edge regions. The reflector electrodes have a lesser average pitch than the average pitch of the IDT electrodes in the central region.

Abstract: A filter includes: a series-arm resonator; and a parallel-arm resonator. The series-arm resonator and the parallel-arm resonator each include: an interdigital transducer (IDT) electrode formed on a substrate and including a plurality of electrode fingers; and a protective film. The protective film included in the parallel-arm resonator is thinner than the protective film included in the series-arm resonator. The parallel-arm resonator has a first fractional bandwidth ((the higher-order resonance frequency?the resonant frequency)/the resonant frequency) greater than the first fractional bandwidth of the series-arm resonator. The parallel-arm resonator has a second fractional bandwidth ((the higher-order antiresonant frequency?the antiresonant frequency)/the antiresonant frequency) greater than the second fractional bandwidth of the series-arm resonator.

Abstract: A multiplexer includes a filter located between a common terminal and an individual terminal, and a filter that is located between the common terminal and an individual terminal and that has a pass band whose frequency is lower than the pass band of the filter. The filter includes serial arm resonators provided on the first path connecting the common terminal to the individual terminal. Each of the serial arm resonators includes a piezoelectric substrate and an IDT electrode which use leaky waves as principal acoustic waves. The occurrence frequency of the Rayleigh wave response of the serial arm resonator is different from that of the serial arm resonator.

Abstract: A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.

Abstract: Bandpass filters are disclosed. A bandpass filter includes a plurality of series resonators and a plurality of shunt resonators. The series resonators are connected in series between a first port and a second port. The plurality of series resonators includes a first series resonator and a second series resonator connected at a node. The plurality of shunt resonators includes a first shunt resonator coupled between the node and a ground. A capacitor bridges the first and second series resonators.

Abstract: Systems and methods for performing actions in response to charging events, such as charging events associated with a specific electric vehicle and/or a specific charging station, are described. In some embodiments, the systems and methods may receive a request from an electric vehicle to identify a charging station from which to charge a battery of the electric vehicle, provide information associated with the electric vehicle to one or more charging stations proximate to the electric vehicle, receive from the one or more charging stations information identifying parameters associated with potential charging events provided by the one or more charging stations, and provide the information identifying the parameters associated with potential charging events provided by the one or more charging stations to the electric vehicle.

Abstract: A filter includes series resonators in a signal path. An IDT electrode included in the series resonators includes at least either first electrode fingers including variant portions or second electrode fingers not including variant portions. In the IDT electrode included in one or more series resonators of the series resonators, a direction that connects the respective other ends of a plurality of electrode fingers intersects an acoustic wave propagation direction. In a first portion and a second portion of the IDT electrode, the first and second electrode fingers are arranged in a predetermined order.

Abstract: A filter device utilizing surface acoustic waves includes one or more series arm resonators connected to each other along a path between a first input/output terminal and a second input/output terminal, and three or more parallel arm resonators each connected between a connection node provided on the path and ground and defining the pass band of the filter device. Parallel arm resonators having different anti-resonant frequencies from each other are included. Parallel arm resonators among the three or more parallel arm resonators are connected to the same connection node provided along the path. Remaining parallel arm resonators are connected to different connection nodes from the same connection node. The anti-resonant frequencies of the parallel arm resonators connected to the same connection node are identical and are the lowest anti-resonant frequencies among the anti-resonant frequencies of the three or more parallel arm resonators.

Abstract: A resonator that includes a piezoelectric vibrator, a frame, and a first node generator between the piezoelectric vibrator and the frame. Moreover, a first connecting arm connects the first node generator to the piezoelectric vibrator that opposes the first, and a first holding arm connects the first node generator to a part of the frame that opposes the first node generator. The first node generator includes a width extending in a second direction, which is orthogonal to a first direction of the first connecting arm, that is a maximum width where the first node generator is closer to the first connecting arm than a center of the first node generator relative to the first direction. Moreover, the width of the first node generator gradually decreases from the maximum width as the first node generator extends towards the first holding arm.

Abstract: A first filter of a multiplexer includes a ladder filter structure with a plurality of series resonators and a plurality of parallel resonators. Each resonator is an acoustic wave resonator that includes an InterDigital Transducer (IDT) electrode including a pair of comb-shaped electrodes. A total number of reflection electrode fingers of the reflectors of at least one of the series resonator that is closest to the common terminal among the series resonators and the parallel resonator that is closest to the common terminal is smaller than a total number of reflection electrode fingers of the reflectors of each of a remainder of the resonators.

Abstract: A surface acoustic wave resonator comprises at least one set of interdigital transducer (IDT) electrodes disposed on an upper surface of a piezoelectric substrate between first and second reflector gratings, a layer of silicon nitride disposed over the at least one set of IDT electrodes and the first and second reflector gratings, and a continuous trench formed in the layer of silicon nitride over portions of bus bar electrodes and tips of electrode fingers of the at least one set of IDT electrodes and over portions of bus bar electrodes and electrode fingers of the first and second reflector gratings to reduce acoustic leakage at electrode fingers of the first and second reflector gratings proximate the at least one set of IDT electrodes.

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. A decoupling dielectric layer is on the front surface of the piezoelectric plate. An interdigital transducer (IDT) is formed over the decoupling dielectric layer such that interleaved fingers of the IDT are over a portion of the piezoelectric plate suspended across a cavity formed in the substrate.

Abstract: A variable-frequency surface acoustic wave electronic cigarette includes an atomizer. An atomization cavity is disposed in the atomizer, and a variable-frequency surface acoustic wave atomization chip is disposed at a lower portion of the atomization cavity. An inverted trapezoidal interdigital transducer is disposed on the variable-frequency surface acoustic wave atomization chip. An e-liquid storage cavity is disposed in the atomization cavity. A porous ceramic sheet is disposed between the e-liquid storage cavity and the atomization chip. The new variable-frequency surface acoustic wave electronic cigarette can realize any adjustment of the working frequency within a set range, thereby realizing the autonomous regulation and control of a smoke particle size after atomization of the e-liquid.

Abstract: A positioning member for positioning optical components includes a laminated body in which a plurality of thin metal plates is laminated. In the positioning member for positioning the optical components by an upper surface of a first plate forming the laminated body and a side surface of a second plate disposed above the first plate, a portion where two non-parallel side surfaces of the second plate for positioning the optical components cross each other includes a cutout portion including a crossing portion of the side surfaces.

Abstract: One example discloses a near-field device, including: a conductive housing physically coupled to the near-field device; a near-field antenna, having a first feed point and a second feed point, and including, a first inductive coil having a first end coupled to the first feed point, a second end coupled to the second feed point, and a connection point; a conductive plate capacitively coupled to the conductive housing, and coupled to the first end of the first inductive coil; a tuning circuit; a reference potential; wherein another end of each of the capacitance banks and another end of each of the resistance banks are coupled to the reference potential; wherein the connection point is galvanically coupled to the reference potential; and wherein the conductive housing is galvanically coupled to the reference potential.

Abstract: An elastic wave device that utilizes a longitudinal wave leaky elastic wave includes a first medium layer, a second medium layer stacked on the first medium layer either directly or indirectly and that is a silicon oxide layer, a piezoelectric film stacked on the second medium layer either directly or indirectly, and an IDT electrode disposed on the piezoelectric film either directly or indirectly. In the elastic wave device, ?1×C11, which is a product of a density ?1 (kg/m3) of the first medium layer and an elastic constant C11 of the first medium layer, is larger than ?0×C11, which is a product of a density ?0 (kg/m3) of the piezoelectric film and an elastic constant C11 of the piezoelectric film.

Abstract: A filter includes: a piezoelectric substrate; a first acoustic wave resonator located on the piezoelectric substrate and including a pair of first reflectors including first grating electrodes and a pair of first comb-shaped electrodes that is located between the first reflectors and includes first electrode fingers; and a second acoustic wave resonator that is connected in series or parallel with the first acoustic wave resonator, is located on the piezoelectric substrate, and includes a pair of second reflectors including second grating electrodes and a pair of second comb-shaped electrodes that is located between the second reflectors and includes second electrode fingers, an average value of duty ratios of the second grating electrodes being different from an average value of duty ratios of the first grating electrodes, an average value of pitches of the second electrode fingers being substantially equal to an average value of pitches of the first electrode fingers.

Abstract: A filter body includes a serial arm and one or more parallel resonators in a state where they are connected in a ladder shape. The serial arm includes a plurality of serial resonators connected in series to each other. A difference of resonance frequencies among the plurality of serial resonators is smaller than a half of a difference between the resonance frequency and an antiresonance frequency of each serial resonator. The serial arm includes a first divided arm which extends from one side toward the other side in a predetermined direction on the piezoelectric substrate, and a second divided arm which is folded back from the other side of the first divided arm and extends toward the one side. The shield conductor includes a portion which is located between at least one of the serial resonators included in the first divided arm and at least one of the serial resonators included in the second divided arm.

Abstract: A multiplexer includes a common terminal, a first band pass filter that is connected to the common terminal and has a first pass band, and a second band pass filter that is connected to the common terminal and has a second pass band located at higher frequencies than the first pass band. The first band pass filter includes an acoustic wave device that includes a support substrate, a piezoelectric body stacked on the support substrate, and an IDT electrode provided on the piezoelectric body. The piezoelectric body is made of lithium niobate. The acoustic wave device utilizes Rayleigh waves.

Abstract: Acoustic wave devices and interdigital transducer (IDT) arrangements for surface acoustic wave (SAW) devices are disclosed. Representative SAW devices are described herein that provide sharp transitions between passband frequencies and frequencies that are outside of desired passbands. A SAW device may include several IDTs arranged between reflective structures on a piezoelectric material and one or more additional IDTs or electrode pairs that are configured to modify the influence of parasitic capacitance, or other internal device capacitance, thereby improving steepness on the upper side of a passband as well as improving rejection for frequencies outside of the passband. The one or more additional IDTs or electrode pairs may be configured as at least one of a capacitor, an IDT capacitor, an IDT with a floating electrode, or combinations thereof.

Abstract: An elastic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The IDT electrode includes a busbar electrode extending in an elastic wave propagation direction and electrode fingers connected to the busbar electrode and extending in a direction perpendicular or substantially perpendicular to the elastic wave propagation direction. The piezoelectric substrate includes a groove extending along the elastic wave propagation direction. The groove is provided on a side across the busbar electrode in the perpendicular or substantially perpendicular direction from a side at which the electrode fingers are located.

Abstract: An elastic wave device includes a piezoelectric thin film provided on a low acoustic velocity film and an IDT electrode provided on the piezoelectric thin film, wherein the piezoelectric thin film is made of a piezoelectric single crystal and includes a first principal surface that is a positive surface in a polarization axis direction and a second principal surface that is a negative surface in the polarization axis direction. The first principal surface of the piezoelectric thin film faces the low acoustic velocity film, and the second principal surface faces the IDT electrode.

Abstract: Unreleased plane acoustic wave (PAW) resonators are disclosed. An example unreleased PAW resonator includes a substrate, a first acoustic reflector disposed on the substrate, and a piezoelectric layer disposed on the first acoustic reflector, wherein the first acoustic reflector and the piezoelectric layer are unreleased from the substrate.

Abstract: An elastic wave device includes, when a region of a main surface of a piezoelectric substrate in which a first functional electrode including a comb-shaped or substantially comb-shaped electrode and reflectors and a second functional electrode including a comb-shaped or substantially comb-shaped electrode and reflectors are provided is referred to as a first region, and the remaining region of the main surface is referred to as a second region, first metal members provided in the second region so as to be adjacent to the first functional electrode and second metal members provided in the second region so as to be adjacent to the second functional electrode. The first and second metal members are not electrically connected to any of the functional electrodes. A dielectric film is provided on the main surface of the piezoelectric substrate so as to cover the functional electrodes and the first and second metal members.

Abstract: An elastic wave device includes a substrate, an IDT electrode, a wire, an electrically insulating film, and an identification marking. The substrate has piezoelectricity. The IDT electrode is provided on the substrate and includes a pair of comb-shaped electrodes facing each other. The wire is provided on the substrate and connected to the IDT electrode. The electrically insulating film is provided at least on the IDT electrode and the wire. The identification marking is defined by an uneven portion of a surface of the electrically insulating film. The identification marking does not to overlap the IDT electrode in plan view of the substrate.

Abstract: An elastic wave device includes, on an elastic wave element substrate, an IDT electrode including electrode fingers, and reflectors. At least one electrode finger of each of the reflectors include a portion having a relatively large thickness in a longitudinal direction and a portion having a relatively small thickness in the longitudinal direction. The portion having the relatively large thickness each reflector is thicker than a thickness of the electrode fingers of the IDT electrode.

Abstract: A multiplexer includes a first reception-side filter and a second reception-side filter whose passband has frequencies higher than the first reception-side filter. The first reception-side filter includes a series arm resonator provided on a first path, and parallel arm resonators provided on a path electrically connecting the first path and ground. A direction connecting tips of a plurality of electrode fingers included in each resonator crosses an elastic wave propagating direction at a certain angle. The parallel arm resonator closest to a common connection terminal does not include third electrode fingers, and the other parallel arm resonators include third electrode fingers.

Abstract: A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.

Abstract: Aspects of the subject disclosure may include, a coupler having a first member coupled to a transmission medium, a first component coupled to the first member, a second member coupled to the transmission medium, and a second component coupled to the second member. The first component can facilitate transmission of first signals via the first member, and the second component can facilitate transmission of second signals via the second member. The first signals and the second signals can in turn induce electromagnetic waves that propagate along the transmission medium without requiring an electrical return path. Other embodiments are disclosed.

Abstract: Techniques are disclosed for increasing capacitance, decreasing losses, and/or improving a quality factor of a SAW filter. The techniques include using a partial-IDT instead of a reflector between two groups of IDTs. The partial-IDT is implemented having a cavity transition on a first end and a reflector transition on a second end. The cavity transition facilitates propagation of main-resonance acoustic waves into, or between elements of, the partial-IDT. The reflector transition facilitates reflection of main-resonance acoustic waves.

Abstract: An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ?. The oblique angle ? is about 0.4° or more and about 10° or less.

Abstract: Phase shift circuits including two or more slanted-finger IDT electrodes, and filters, duplexers, or other electronic devices incorporating same. In one example a filter includes a main filter circuit connected between an input and an output and having a first phase characteristic, and a phase shift circuit connected in parallel with the main filter circuit, the phase shift circuit including first and second capacitor elements and a pair of acoustic wave elements connected in series between the first and second capacitor elements, the pair of acoustic wave elements including a pair of slanted-finger IDT electrodes disposed apart from each other on a single acoustic wave path along which acoustic waves propagate through the acoustic wave elements, the phase shift circuit having a second phase characteristic opposite to the first phase characteristic in an attenuation band that corresponds to at least a portion of a stopband of the main filter circuit.

Abstract: The present invention discloses a touch display device and an electronic apparatus. The touch display device includes a display unit and a touch unit. The touch unit include a transparent electrode, and a pattern of the transparent electrode includes a plurality of first touch electrodes and a plurality of dummy electrodes; and each of the dummy electrodes includes at least two columns of dummy sub-electrodes, each of the columns of dummy sub-electrodes includes a plurality of dummy sub-electrodes arranged in the first direction with each of the dummy sub-electrodes extending in the first direction, there is a sub-slit formed between every two adjacent dummy sub-electrodes in each of the columns of dummy sub-electrodes, and at least a part of the sub-slits of at least two adjacent ones of the columns of dummy sub-electrodes are arranged staggeredly in the first direction. The electronic apparatus includes the touch display device.

Abstract: A diplexer includes a multilayer substrate, first, second, and third terminals, and a ground terminal provided on the multilayer substrate. The first filter is between the first terminal and the second terminal, the second filter is between the first terminal and the third terminal. An interlayer spacing of the multilayer substrate includes a first filter ground electrode, a second filter ground electrode, and a shield ground electrode shielding between the first filter and the second filter. The ground terminal includes a first filter ground terminal connected to the first filter ground electrode, a second filter ground terminal connected to the second filter ground electrode, and a shield ground terminal connected to the shield ground electrode.

Abstract: A resonant circuit includes a resonator. An inductor is connected in parallel with the resonator. An inductor is connected in series with the parallel circuit formed of the resonator and the inductor. Further, a variable capacitor is connected in parallel with a series circuit formed of the inductor and the parallel circuit formed of the resonator and the inductor. The variable capacitor is connected in series with these circuits. As a result, a resonant circuit and a high-frequency filter supporting more communication signals are provided.

Abstract: An acoustic wave element comprising a lithium tantalate substrate having the Euler angles (?, ?, ?), a first component ? satisfying 10°???50°; and an electrode disposed on the lithium tantalate substrate and configured to excite a main acoustic wave of wavelength ?, the electrode having a density ?M satisfying ?M??Ti where ?Ti represents a density of titanium (Ti), and a thickness hM of the electrode satisfies 0.141×exp(0.075?M)??hM?0.134? Embodiments of the present disclosure minimize a thickness of the electrode and suppress a spurious Rayleigh wave signal.

Abstract: An all-acoustic filter includes acoustic directional couplers and acoustic filters. In one embodiment, the all-acoustic filter includes two acoustic directional couplers, pair of matched acoustic filters corresponding to either transmit or receive frequency bands, and another acoustic filter corresponding to the other of transmit or receive frequency bands. An all-acoustic duplexer may be realized monolithically in a small form factor, may be tunable, may support multiple transmit or receive frequency bands, or may include schemes for antenna mismatch correction.

Abstract: A ladder-type surface acoustic wave filter assembly includes a plurality of series resonators formed on a substrate and connected between an input terminal and an output terminal. A first series resonator has a lowest resonance frequency among the plurality of series resonator. A parallel resonator formed on the substrate and connected between the plurality of series resonators and the ground terminal. A dielectric film is coupled to at least one of the plurality of series resonators and has an inverse temperature coefficient of frequency to that of the substrate. A film thickness of the dielectric film in a region where the second series resonator is formed is smaller than a film thickness of the dielectric film in a region where the first series resonator is formed.

Abstract: SAW element has a substrate; an IDT having a first comb-shaped electrode and a second comb-shaped electrode located on an upper surface of the substrate; and a capacitance element located on the upper surface of the substrate. The capacitance element has a first counter electrode connected to the first comb-shaped electrode and a second counter electrode connected to the second comb-shaped electrode and facing the first counter electrode across a third gaps. The direction from the first counter electrode through the third gaps toward the second counter electrode is a reverse direction from the direction from the first comb-shaped electrode through the gaps toward the second comb-shaped electrode. If it is assumed that the gap and width of the gap are di and wi, and the gap and width of the third gap are Dj and Wj, the following formula holds: 0<?(Wj/Dj2)<2?(wi/di2).

Abstract: An acoustic wave device includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film, at least one of the lower electrode and the upper electrode including a first conductive film and a second conductive film formed on the first conductive film; an insulating film sandwiched between the first conductive film and the second conductive film and having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and a third conductive film formed on edge surfaces of the insulating film and the second conductive film and causing electrical short circuits between the first conductive film and the second conductive film.

Abstract: A high-frequency module includes a multilayer substrate, a switch IC, a SAW duplexer and a matching circuit. The matching circuit includes a wiring line and first and second inner layer ground electrodes. The matching circuit performs impedance matching between the switch IC and the SAW duplexer in a pass band of the SAW duplexer. The wiring line is an inner layer electrode of the multilayer substrate that is connected between the switch IC and the SAW duplexer. The first and second inner layer ground electrodes face the wiring line in a stacking direction with only dielectric layers of the multilayer substrate therebetween.

Abstract: A grid to vehicle system is described. In some examples, the system selectively controls one or more electric vehicles connected to an electric grid based on conditions associated with the electric grid. For example, the system may control charging operations of the electric vehicles based on load balancing conditions associated with the electric grid, based on cost conditions associated with electric power provided by the electric grid, and so on.

Abstract: A fluidics apparatus for manipulation of at least one fluid sample is disclosed. A manipulation surface locates the fluid sample. A surface acoustic wave (SAW) generation material layer is provided. This is a polycrystalline material, textured polycrystalline material, biaxially textured polycrystalline material, microcrystalline material, nanocrystalline material, amorphous material or composite material. A transducer electrode structure arranged at the SAW generation material layer provides SAWs at the manipulation surface for interaction with the fluid sample. The manipulation surface has a phononic structure, for affecting the transmission, distribution and/or behavior of SAWs at the manipulation surface. The apparatus is typically manufactured by reel-to-reel processes, to reduce the unit cost to a level at which the apparatus can be considered to be disposable after a single use.

Abstract: A microresonator with an input electrode and an output electrode patterned thereon is described. The input electrode includes a series of stubs that are configured to isolate acoustic waves, such that the waves are not reflected into the microresonator. Such design results in reduction of spurious modes corresponding to the microresonator.

Abstract: A touch panel includes dummy electrodes, disposed in a transmit electrode layer or a receive electrode layer whichever is below an isolation layer. In one embodiment, an anti-reflective layer includes at least one composite refractive-index three-layer structure. In another embodiment, the receive electrode layer is disposed below the isolation layer, and the receive electrode layer and the dummy electrodes are electrically coupled to a same electric potential.

Abstract: A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit.

Abstract: A ladder acoustic wave filter device is constructed such that ripples in the pass band are suppressed, and insertion loss is small in both of a high frequency side portion and a low frequency side portion of the pass band. Apodization weighting is applied to a series-arm-side IDT electrode. Busbars of the series-arm-side IDT electrode are configured so that in an acoustic wave propagation direction, a distance in an overlap width direction between the busbars becomes shorter as the overlap width of electrode fingers becomes smaller. Each of a pair of comb-shaped electrodes of a parallel-arm-side IDT electrode further includes a plurality of dummy electrodes that extend from a busbar and are opposed to electrode fingers of the other comb-shaped electrode in the overlap width direction. The parallel-arm-side IDT electrode is a normal IDT electrode in which the overlap width is constant.