Abstract: A microwave switching device replacing PIN diodes and operating at higher eeds requires reduced switching current. A field effect controlled device is utilized with no ground plane, for elimination of source-ground and drain-ground capacitance. Massive source and drain structures reduce terminal inductance. A low resistance active region provides dynamic switching capability improving over prior art devices in operating frequencies and speeds.

Abstract: An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the embodiment disclosed, a Gunn effect diode is formed on a substrate of gallium arsenide (GaAs), together with a cavity region and a metalized heat sink layer permitting operation at relatively high power levels. A bias current is applied through a conductive strip and then through the cavity region to the diode, and a quarter-wave choke is provided in the conductive strip to prevent transmission of radio-frequency energy back along the strip.

Abstract: A radar receiver protector having high isolation and low insertion losses due to a unique microwave assembly configuration is disclosed. The receiver protector includes at least one high power input protection stage and a sensitivity time controlled multi-level attenuation which together achieve rapid switching with a non-critical bias supply and circuit configuration and develop attenuation levels which are invariant with temperature and insensitive to diode parameters.

Abstract: The passive limiter is formed by at least two parallel micro-strip lines, a slot line orthogonal to the two micro-strip lines and a pair of diodes having the same polarity and placed on each edge of the slot line facing one another, the assembly of these three lines and the diodes forming at least two micro-strip line-slot line transitions.

Abstract: An improved broad band microwave detector of the type including a detector diode, a by-pass capacitor, and a resistive termination wherein fabrication using coplanar transmission line techniques results in a substantial increase in the frequency response of the detector.

Abstract: The present invention provides a dielectric material adapted for microwave integrated circuits (MIC) and an electric circuit making use of said dielectric material. More particularly, an oxide dielectric material principally consisting of (1-x)BaO.xTiO.sub.2 (0.7.ltoreq.x.ltoreq.0.95) and containing both 0.007 to 0.7 weight % of manganese and 0.037 to 3.7 weight % of zirconium, has a large dielectric constant, a small dielectric loss and a small temperature coefficient of dielectric constant and is uniform over a broad range, and especially it is possible to easily manufacture a substrate having a uniform dielectric constant and a uniform dielectric loss. Transistors and MIC's employing such substrates can attain uniform and excellent high-frequency characteristics.

Abstract: An N or N.sup.+ type semiconductor substrate has a P-type layer diffused therein to form a PIN junction that is etched out between adjacent mesas and filled in with glass to form adjacent diodes between top and bottom surfaces of the substrate. The bottom surface is metallized. The top surface carries a conducting layer interconnecting the adjacent P-type portions of the mesas. This conducting layer has end portions connected to a respective diode of end width and length joined by an intermediate portion of intermediate width and length.

Abstract: Josephson devices are distributed in series in a transmission line structure in which electromagnetic waves are used to synchronize the dynamics of the Josephson devices in order to achieve coherence between the devices. Electromagnetic waves, such as oscillatory traveling waves, standing waves, and solitary waves along the transmission line couple the Josephson devices in a manner such that coherence is achieved for the entire array. The Josephson devices can be tunnel junctions, point contacts, micro bridges, and weak links, and more generally include any such superconductive device which obeys the Josephson equations of voltage and current. The transmission line is any line which controllably supports electromagnetic waves, and can include strip lines located over a ground plane, coaxial lines, etc. A DC bias is supplied to the transmission line, and the ends are terminated in accordance with the type of wave to be propagated along the line.

Abstract: Disclosed is a millimeter wave bulk effect RF power limiter consisting of a lanar PIN diode formed on a gallium arsenide (GaAs) substrate which also comprises the waveguide structure for RF energy in the 60-300 GHz range. The PIN diode is comprised of a wedge of intrinsic type semiconductor material formed across the top surface of the substrate and having mutually opposing regions of p and n type semiconductor material fabricated in the side edges of the wedge to which is attached planar beam leads. With suitable electrical operating potentials applied to the PIN diode avalanche breakdown occurs at a critical RF power level which acts to limit the flow of RF energy flow in the structure past the location of the PIN diode. Such a structure permits the device to be integrated into the front end sections of receivers utilized in communications, missile guidance and radar systems operable in the millimeter and sub-millimeter frequency range.

Abstract: After a circuit is completely configured, including the mounting of semiconducting material onto a conductive layer and the connection of a conductor lead from a dot on the semiconducting material to the circuit, the required backdiode e/i characteristic is obtained by subjecting the whole circuit assembly to etching processing. The entire circuit is immersed into an electrolytic solution for etching away the semiconducting material to form the fragile narrow neck of the backdiode, thereby obtaining the required backdiode characteristic while advantageously obtaining an irreducible minimum of parasitic reactances associated with the resultant backdiode. Subsequent handling of the fragile backdiode as a component has been avoided because it is advantageously fabricated "in situ" pre-joined and integrated with the other components of the desired electronic circuit.

Abstract: In a microstrip circuit having dual diode driven, independently oscillati half-wave open ring resonating sections, partially coupled quarter-wave ring sections are provided to permit matching and tuning of diodes having dissimilar negative impedances. The quarter wave ring sections are combined with appropriate line sections to accommodate the negative impedance devices. The diode circuits are connected to the low impedance points of the oscillating ring sections by the quarter-wave ring sections. Appropriate terminations to ground are provided to suppress possible oscillations in a bias circuit. Second and third harmonic traps are provided for use with TRAPATT diodes. Ground lines are provided to reduce circuit unbalance in the event of drastic power changes occuring on either side of the circuit which may other wise result in odd mode operation. Slots are provided to suppress an undesired transverse resonance mode in the line sections accommodating the negative impedance devices.

Abstract: A microwave diode having an integrally formed fixed resistance layer to provide a monolithic structure. The resistance layer has an approximate value of 50-ohms when the diode is in the forward biased state. The diode in monolithic form is adaptable to be soldered directly to a housing electrically connected to the ground plane of the microstrip circuit. In the reverse bias state the junction capacitance of the structure is small enough, typically 0.02 to 0.05 pf, to isolate the diode from the microstrip circuit thereby minimizing the insertion loss of the device. Packaged varieties of the monolithic structure are applicable to stripline, coaxial and waveguide microwave circuits.

Abstract: A transistor device which is suitable for a high-frequency and high-power transistor is disclosed. The transistor device comprises a first ceramic plate and a second ceramic plate mounted on the first ceramic plate. The first ceramic plate is provided with a transistor chip element and also emitter, base and collector leads which are formed thereon, each of these leads being connected to a corresponding emitter, base and collector area of the transistor chip element, respectively. The second ceramic plate is provided with emitter, base and collector guide leads formed thereon. These emitter, base and collector guide leads have emitter, base and collector lead terminals, respectively. The emitter, base and collector leads of the first ceramic plate are electrically connected with the corresponding emitter, base and collector guide leads of the second ceramic plate, respectively, by means of respective longitudinal conductive paths formed along and on the side surface of the second ceramic plate.

Abstract: A planar Schottky diode is disclosed which is inserted into a transmission line without disruption of characteristic impedance. The diode comprises a plurality of parallel finger-like projections forming Schottky contacts distributed over a width of the transmission line and also of ohmic contacts surrounding these projections but with a longer contact edge.

Abstract: An active microwave amplifier element is hermetically sealed on the opposite side of a dielectric substrate from the side in which input and output signals are transmitted. The active element is mounted on a ground plane and is electrically connected to coplanar waveguide elements which are coplanar with the ground plane. The coplanar waveguide elements are electrically connected to associated microwave strips through the dielectric substrate and said holes are also sealed. A cap having similar coefficient of thermal expansion to the dielectric substrate is mounted on the ground plane to enclose and hermetically seal the active element.

Abstract: A microwave integrated circuit device for use in the transmitting and receiving portion of a Doppler speedometer utilizing microwaves. In order to keep the transmitting power low and the receiving sensibility high, a microwave integrated circuit plate in which a transmitting antenna line and lines for connecting mixer diodes therewith are arranged at right angles is mounted within a rectangular waveguide and in the vicinity of a short-circuit plate of the waveguide in a manner to lie at right angles with the electric field of the waveguide.

Abstract: This disclosure relates to the packaging of microwave integrated circuits (MICs) whereby an MIC is hermetically sealed within an enclosure comprising a first plate of dielectric material which carries the circuit to be enclosed, a wall of dielectric material sealed to the surface of the first plate surrounding the circuit, and a second plate of dielectric material providing a lid sealed over the wall to complete the enclosure. The first plate carries planar conductors which define at least one microwave transmission line, e.g. microstrip, extending across the wall into the enclosure from outside to provide direct microwave coupling to the enclosed circuit and thereby obviating the usual need for transitions to and from coaxial cable.Part or all of the enclosed circuit may be contained within a recess provided by forming an aperture in the first plate and sealing a third plate of dielectric material across the aperture from below.

Abstract: A microwave integrated circuit device for reception wherein a microwave integrated circuit substrate is mounted on a short-circuited plane of an inner surface of a waveguide, a rectangular groove is provided in the short-circuited plane, and a mixer diode is arranged astride the groove.

Abstract: There is disclosed a microwave integrated circuit device which comprises a waveguide circuit, a short-circuiting member serving as a short-circuiting plane and having a groove in the short-circuiting plane, means for varying the effective dimensions of the groove which have effect on microwave circuit components, a microwave integrated circuit formed on an insulating substrate so disposed as to cover the groove, and a semiconductor element disposed on the microwave integrated circuit to convert the microwave signal in the waveguide circuit into a selected one of a d.c. and a low-frequency, whereby the conversion efficiency may be increased by setting the peak position of the output level characteristic of the device at a desired frequency within a certain frequency band.

Abstract: A planar semiconductor device having a cathode region surrounding an anode region is flip chip mounted to a conductor film circuit. An anode contact extends from the anode region and is bonded to a first portion of the conductor film circuit such that that portion of the cathode region which overlaps the first portion of the conductor film circuit is minimized. That portion of the cathode region distal from the anode region is relatively wide, and a relatively large area cathode contact extends from the cathode region and is bonded to a second portion of the conductor film circuit.

Abstract: A removable diode package for mounting beam-lead diodes in coaxial, stripline or waveguide microwave circuits is described. The diode package is capable of operation at frequencies above 40 GHz. A low-dielectric polyimide insulating washer is used to reduce parasitic elements normally associated with diode packages at microwave and millimeter frequencies.

Abstract: A new package for semiconductor optoelectronic devices is disclosed, which comprises a novel geometrical configuration and provides plug-in capability. The package configuration provides a convenient means for supplying electrical signals to or from the device(s) within the package while maintaining a coaxial geometry, useful in optical and thermal control. Techniques for bonding devices into the package are easily automated using conventional bonding and assembly equipment. The package permits use of the device in a variety of orientations.

Abstract: PIN diodes of decreasing base region thicknesses, wherein the thickest base region diode functions as a quasi-active limiter with turn-on bias supplied by detected RF current in a Schottky barrier diode with a discharge resistor providing fast recovery; and the thinnest base region PIN diode being a zero bias punch-through type, with a dc sensitivity time control, functioning as a passive limiter during transmit and controlled attenuator during receive provides an improved radar receiver protector circuit. The operation of the PIN diode is enhanced by a unique mounting on a gold-plated copper puck in the circuit board and tuning the signal leads to the diode.

Abstract: A semiconductor device which provides in an input circuit a substantially low reactance and a relatively high resistance within a range of operating frequencies to improve the impedance match between the device and an energy source. The device has a semiconductor die with at least a first and a second bonding terminal having capacitance and resistance between the bonding terminals. At least a first bond lead electrically connects the first bonding terminal to a first metallic contact area. Means connects at least a second bond lead between the second bonding terminal and a second metallic contact area. At least a third bond lead electrically connects the first bonding terminal to the second metallic contact area to form an inductance to interact with the capacitance of the semiconductor die within the operating range of frequencies thereby to increase the input impedance.

Abstract: A semiconductor package for containing two individual devices such that they may be externally connected in a pushpull relationship. Two transistors, each having an input and output pad are formed on the same dielectric wafer, in a spaced relationship with each other and a ground plane so as to form two separate transmission line paths. The transistors are wired either in a grounded emitter or grounded base configuration. A shunt inductor is formed by a metallized strip or lead bond from the collector of one transistor to the collector of the other transistor. This inductor reduces the influence of the parasitic capacitance in the equivalent output circuit of the transistors. Since the collectors of both transistors are at the same DC level it is not necessary to include a DC blocking capacitor in series with the inductor.

Abstract: A microstrip circuit which features a pair of open ring resonators sections adapted to oscillate independently in their even mode. In a preferred form, the ring resonator sections are each driven by a TRAPATT diode, and include a load circuit which combines the individual power outputs to a common load. Tuning stubs and the like may be provided to reactively trap harmonics in order to initiate the desired TRAPATT mode, and additional ring resonators may be interposed between the driving circuit and the load to filter the fundamental frequency, if desired. Other configurations permit power to be combined from two or more sets of dual ring resonators.

Abstract: A field effect transistor is mounted in a flip-chip carrier which is in contact with one surface of a metal plate, the other surface of the plate being in contact with one surface of a block of beryllium oxide. A metal sheet, connected to a ground plane, is in contact with the one surface of the block and the surface of the block opposed therefrom. The plate and the sheet have a space therebetween. A film resistor is disposed upon the block in the space.

Abstract: A semiconductor device is provided with a metal header of a size sufficiently small such that only a semiconductor element holding plate which requires heat dissipation can be mounted thereon. The metal header supports at its upper fringe portion an apertured member having a penetrating opening sealed along the opening. An insulative outer frame having a thermal expansion coefficient of the same order as that of the apertured member is supported on the peripheral portion of the apertured member. A lid member for hermetic sealing is bonded onto the outer frame.