Abstract: Semiconductor device for the microwave frequency ranges includes a semiconductor element of the "flip chip" type which comprises a semiconductor substrate having an active surface with at least one integrated circuit, a plurality of metal input-output pads and a circuit of transmission lines of the coplanar type having conductor strips and ground metallizations disposed on the active surface. A circuit of transmission lines of the microstrip type with conductor strips disposed on a surface opposed to the active surface and whose ground metallizations are formed by the ground metallization of the active surface. A base plate comprising an insulating substrate having a front surface with a plurality of metal input-output pads and ground metallizations patterned so as to be in electrical contact with the ground metallizations of the active surface of the semiconductor element when the latter is bonded to the base plate.

Abstract: A semiconductor device comprising a semiconductor chip, a sheet-like metal member electrically connected to a major surface of the semiconductor chip and serving as a ground electrode for the chip, and input/output electrodes electrically connected to the semiconductor chip and situated in the same plane as that of the sheet-like metal member, the chip, the metal member, and the input/output electrodes being encapsulated in an electrically insulating member having a bottom surface and adapted to be mounted on a surface of a circuit board. The sheet-like metal member is brought out from inside the electrically insulating member without being bent and has its one end face situated in substantially the same plane as the bottom surface of the electrically insulating member which faces to the surface of the circuit board when the metal member is mounted on the circuit board and the major surface of the chip is approximately prependicular to the end face of the sheet-like metal member.

Abstract: A socket having primary conductors and secondary conductors. The socket provides electrical connection between active circuitry installed on a substrate and external circuitry. The impedance between each primary conductor and each secondary conductor is a predetermined value selected in order to match impedances of the active circuitry and the external circuitry.

Abstract: A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active devices on the same substrate. The transmission line is provided using polycrystalline silicon since it can have much higher resistivity than single crystal silicon. Accordingly, a circuit is provided wherein active devices are provided in single crystal silicon and interconnects are formed overlying polycrystalline silicon to provide transmission line interconnects between devices and obtain the desired high frequency response.

Abstract: A low-loss substrate system is provided for carrying and interconnecting optoelectronic/microwave circuits. The system includes a high-resistivity substrate, e.g., silicon of resistivity >1.times.10.sup.3 ohm-centimeter. A dielectric layer, e.g., silicon dioxide, is preferably deposited over at least a portion of the substrate. Low-loss microwave transmission members and passive microwave components, e.g., capacitors and spiral inductors, can be fabricated directly on the dielectric layer with thin-film techniques. Optoelectronic and microwave integrated circuits are preferably mounted on the substrate system with solder bumps and bonding pads. Other portions of the substrate can define grooves for receiving optical fibers. To enhance optical alignment, the grooves and bonding pads are preferably located with photolithographic techniques. The substrate system is especially suited for optoelectronic/microwave circuits that are realized with hybrid integration structures.

Abstract: A means of connecting a plurality of essentially identical active devices is presented for the purpose of multifunction and multiple function operation. These devices, mounted on a chip, are flip-mounted to a circuit motherboard having large passive elements. A push-pull amplifier is presented as an example in which the multiple function operation is the combining of amplifiers whose active devices are on a single chip. The electromagnetic coupling, impedance matching and signal transmission are variously provided by the use of striplines, slotlines, coplanar waveguides, and a slotline converted into a coplanar waveguide. In particular, a conversion of a split coplanar slotline to dual coplanar waveguides provides signal transmission to a pair of transistors flip-mounted onto the coplanar waveguides.

Abstract: A micromachined self-packaged circuit provides at least partial shielding of a circuit element. Preferably, all the elements comprising a circuit are completely shielded between a first wafer of semi-conductor material having a recess and receiving a metallized layer therebeneath and a second wafer of semi-conductor material having a groove in a bottom face against which is received a metallized layer. The first wafer metallized face is then adhesively bonded to the second wafer on a surface opposite the metallized layer to which a circuit is affixed. The second wafer metallized face and metallized grooves cooperate with the first wafer metallized face to provide a shielded circuit cavity therebetween. Alternatively, the first or second wafer can be used alone to partially shield a circuit element.

Abstract: A method of constructing a circuit for communicating electrical signals and assembled at least in part by an automated assembly machine is disclosed. The automated assembly machine is operable to select from a plurality of components. The circuit includes a material having a first and second surface and a length. A strip conductor is positioned along the first surface of the material. A ground structure is disposed along the length of the second surface. Finally, a low impedance device selected from the plurality of components is electrically coupled to the ground structure on opposite sides of the strip conductor, wherein the coupling of the low impedance device to the ground structure forms a circumferential shield around the strip conductor. Various alternative embodiments, as well as fabrication methodology are also disclosed.

Abstract: The present invention is a printed circuit board design having a configurable voltage supply and a method for implementing a configurable voltage supply PCB with a family of circuit designs. The printed circuit board is designed such that voltage supply planes can be configured to match the device requirements for different ICs inserted into the PCB. The PCB comprises electrically isolated conductive layers that are split into a plurality of electrically isolated fixed and undefined voltage planes. The fixed voltage planes are each coupled to a different supply voltage provided by an external power supply. Undefined voltage planes are coupled to fixed voltage planes with insertable conductive jumpers to obtain the desired voltage supply for each voltage plane. The voltage plane configuration of a particular PCB can be changed depending on where jumpers are inserted to accommodate device voltage requirements over a family of devices.

Abstract: A high frequency transition (10) from a microstrip transmission line (57) to an MMIC coplanar waveguide (41) is provided. The microstrip transmission line (57) is representative of that typically encountered in a high frequency RF module on a first substrate (11). The MMIC coplanar waveguide (41) is representative of that encountered in low cost MMICs fabricated on a semiconductor substrate (56). An interface (15) couples the microstrip transmission line (57) to a mode converter (16). Mode converter (16) provides impedance mismatch compensation and coplanar waveguide propagation mode conditions for a connector coplanar waveguide (34) which connects from the first substrate (11) to the semiconductor substrate (56). An impedance transformer (40) provides additional impedance mismatch compensation on the semiconductor substrate (39) to complete the transition.

Abstract: A high-frequency, high-power, semiconductor device chip is impedance matched to an off-chip impedance by a matching network including a dielectric element located on a substrate ground plane portion adjacent to the device to be matched. A thin film dielectric layer is formed over the dielectric element, the semiconductor device and the surrounding substrate. A patterned metal matching circuit is disposed over the dielectric layer and is in electrical contact with an electrode of the high-frequency, high-power, semiconductor device. An impedance matching network is formed by the patterned metal circuit, the dielectric element, the dielectric layer and the underlying grounded substrate. The matching characteristics of the network can be tailored by selecting suitable dielectric materials for the dielectric element and by altering design of the patterned metal circuit.

Abstract: A plastic package for microwave applications up to 14 Ghz is disclosed. The plastic package includes a plastic platform, a lead frame embedded on the surface of the platform and, in one embodiment, a plastic cap mounted on the platform so as to seal the chip within the package. The lead frame includes a baseplate for mounting at least one semiconductor chip, at least one ground lead attached to the baseplate and extending outwardly therefrom, and at least one signal lead for conducting signals to or from such semiconductor chip. The signal lead and at least one ground lead are configured as a microwave transmission line such as microwave coplanar strips, or microwave coplanar waveguide for transmitting microwave frequency signals. The package offers a low inductance ground path, good thermal characteristics, and low parasitic inductance and capacitance. It can be applied for high speed and high frequency applications.

Abstract: An active device, such as a field effect transistor ("FET") or MMIC, converts microwave signals between a microstrip transmission line ("microstrip") and a coplanar wave guide ("CPW"). In microstrip-to-CPW conversion using a simple FET, a gate connection is made to the microstrip signal conductor. A drain connection is made to the center conductor on the CPW. Two FET source terminals are connected respectively to each CPW ground strip. The ground strips are electrically coupled to the microstrip ground plane with a minimum length connection so the inductance common to the FET input and output is minimized. The FET can be reconnected so as to reverse the input and output, providing for conversion of signals from CPW to microstrip. Conversion from microstrip to an intermediate CPW and back to microstrip provides for mounting an intermediate circuit, such as an amplifier or other MMIC, directly on the CPW.

Abstract: A three-dimensional interconnect package is provided for monolithic microwave/millimeterwave integrated circuits. A mating substrate for receiving an MMIC has transmission lines disposed over its surfaces. The mating substrate mounted substantially vertical in a base substrate which also has transmission lines for carrying microwave/millimeterwave signals. The transmission lines on both substrates are put in electrical contact and microwave/millimeterwave signals are transmitted between the substrates with a minimum of signal loss or reflection.

Abstract: A PGA connector for a microprocessor has a multilayer base board assembly with alternating conductive and dielectric layers of preselected thicknesses through which signal pins, current source pins and a grounding pin extend. The signal pins are insulated from the conductive layers and the current and grounding pin are connected to preselected conductive layers. A series of connecting apertures formed by holes with respective conductive linings extend through the layers at selected locations between pins to interconnect selected conductive layers. The connecting apertures interconnect all conductive layers of the base board or, in another example, alternately positioned connecting apertures interconnect only respective different sets of alternately positioned conductive layers of the base board enabling improved shielding and impedance regulation and matching.

Abstract: The semiconductor device of the present invention includes a semiconductor substrate on which an integrated circuit equipped with a connection electrode is formed on its main surface. At the center of the main surface, a substrate mounting portion having a cavity portion in which the semiconductor substrate is contained, is provided. At the periphery of the main surface of the substrate mounting portion, a plurality of leads are arranged and fixed to the periphery of the semiconductor substrate mounted in the cavity portion so that ends of the leads oppose each other. The plurality of leads include leads selected as power source lines. The connection electrode of the main surface of the semiconductor substrate is electrically connected to one of the ends of the leads via a bonding wire. A cap for covering at least the semiconductor substrate, the bonding wire and the ends of the leads is adhered to the substrate mounting portion.

Abstract: A monolithic microwave integrated circuit is formed by positioning a distributed, transmission-line network over a microwave-device structure. The ground plane of the transmission-line network adjoins an interconnect system of the microwave-device structure and signal lines of the transmission-line network are adapted to communicate with the microwave-device structure through orifices of the ground plane. The invention facilitates the use of low-cost silicon-based transistors in monolithic microwave integrated circuits.

Abstract: A radio-frequency power amplifier includes a multiple-FET chip that is flip mounted on a connection region of a substrate. An input impedance-matching network is also mounted on the substrate. The network includes a coplanar waveguide having an elongate waveguide signal conductor for each gate terminal on the FET chip with a distal end spaced from the connection region and a proximal end in the connection region. The distal ends are connected to a single base input conductor. The proximal ends are flip mounted to respective ones of gate terminals of the FET chip. A capacitor couples each of the input signal conductor distal ends to an adjacent ground conductor. The signal conductors and capacitors provide a selected impedance at a selected frequency. The capacitors may be on a separate chip flip mounted to the waveguide signal and ground conductors, and may be formed as coplanar waveguides with open-ended signal conductors.

Abstract: A semiconductor device includes a substrate having a microwave semiconductor element, a microwave transmission line disposed on the substrate and electrically connected to the microwave semiconductor element, and a waveguide terminal structure disposed in the substrate and connected to an end of an external waveguide, wherein an end of a signal conductor of the microwave transmission line is included in the waveguide terminal structure. Input and output of microwave signals between the semiconductor device and an external device are carried out simply by applying an end of the external waveguide to the waveguide terminal structure. As a result, even when the substrate of the semiconductor device warps, an input-output characteristic evaluation of the semiconductor device is carried out with high stability.

Abstract: A flip-chip integrated circuit having passive 302, 304, 306 as well as active 308, 310 components on a frontside surface of a substrate. The active devices have airbridges which contact a heatsink to provide heat dissipation from the junctions of the devices.

Abstract: Preferred embodiments include a microstrip patch antenna (38) which also acts as the resonator for an oscillator powered by IMPATT diodes (34, 36); this forms a monolithic transmitter (30) for microwave and millimeter wave frequencies.

Abstract: A semiconductor device includes a microstrip wiring board. The microstrip wiring board includes a substrate having a main surface, a ground conductor extending on the main surface of the substrate, a dielectric film extending on the ground conductor, and a metal wiring line extending on the dielectric film. A semiconductor chip is connected to the microstrip wiring board via a bump.

Abstract: A chip carrier for a semiconductor chip, the chip having a specified thickness and lateral configuration and size. A conductive holder of the carrier has a main surface including a chip mounting surface portion for mounting the semiconductor chip thereon and a peripheral surface portion surrounding the mounting surface portion. An insulative collar member is affixed to the peripheral surface portion and has inner wall surfaces surrounding the mounting surface portion and defining a recess, of depth and lateral configuration and size dimensions respectively corresponding to those of the chip, for receiving therein and thereby positioning the chip on the conductive holder.

Abstract: An improved millimeter wave device package design in which the package includes a dielectric substrate disposed upon a supporting base such that the substrate extends substantially along the peripheral edge of the base, defining a central aperture. A solid conductive layer substantially covers the first surface of the dielectric substrate and a series of conductive transmission lines are formed on an opposing second surface of the substrate. A dielectric layer is disposed upon and substantially covers the transmission lines and the second surface of the substrate upon which they are formed. A seal ring is disposed upon and the dielectric layer and a conductor electrically connects the device to the transmission lines. A lid is sealed atop the seal ring completes the hermetical seal for the device.

Abstract: A semiconductor device microwave integrated circuit includes at least a transistor stage which stage includes a microwave matching circuit and a d.c. bias circuit interconnected at a link node (A). The transistor stage further includes a stabilizing circuit which includes an open stub line connected to the link node. The open stub line connected to the link node is a .lambda./4 line which at the operating frequency imposes a short circuit on the link node. A matching circuit made up of a low-value resistor connected to ground in the microwave mode through a d.c. isolating capacitor is connected to the link node. A .lambda./4 line of the radial type (.lambda./4 radial stub) provides broadband operation.

Abstract: A composite microwave circuit module assembly has a dielectric substrate which is formed by a lower layer, an intermediate layer and an upper layer. The lower layer and the upper layer include a lower ground surface and an upper ground surface, respectively, and the intermediate layer includes a radio frequency signal circuit formed by an active circuit element and a passive circuit element. A number of via-holes filled with metal are arranged along the radio frequency signal circuit to short-circuit the upper ground surface and the lower ground surface so as to shield the radio frequency signal circuit. An element mounting cavity is disposed on the intermediate layer with a portion of dielectric above the intermediate layer being removed, and the active circuit element is mounted on an element mounting land in the cavity. The cavity is covered by a conductor plate member.

Abstract: A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX.TM., is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistivity silicon material. An insulating layer is formed in the wafer below the surface area of active silicon, preferably using the SIMOX process. A monolithic circuit is fabricated on the wafer. A ground plane electrode is formed on the back of the wafer. Direct current and rf capacitive losses under microstrip interconnections and transistor source and drain electrodes are thereby minimized. Reduction in the resistivity of the substrate material as a result of CMOS processing can be minimized by maintaining a shielding layer over the bottom surface of the wafer. Microstrip and airbridge connectors, salicide processing and nitride side wall spacing can be used to further enhance device performance.

Abstract: The present invention describes a switch (10) designed primarily for use in the radio frequency and microwave spectrums. The switch (10) of the present invention uses a lumped element network (16), PIN diodes (18), and capacitive elements (20) to provide isolation in an "open" position wherein the PIN diodes (18) are forward biased. In a "closed" position, wherein the PIN diodes are not forward biased, signals propagate through the switch (10) unhindered because the input impedance of the lumped element network (16) substantially matches the characteristic impedance of transmission line segments (12 and 14) that provide input and output paths to the lumped element network (16).

Abstract: A microwave antenna and receiver assembly is described for use at gigaherz frequencies wherein the antenna is a microstrip antenna and the receiver includes a stripline filter circuit which is integrated in a layered configuration with both the microstrip antenna and the amplifier so as to achieve a very low noise figure, a low SWR and preserve good receiver characteristics, while being easily assembled inside a common radome housing. An inexpensive substrate material formed of alternating layers of polypropylene and woven glass is described for use with the microstrip antenna and other microwave structures.

Abstract: A high frequency module is disclosed which comprises a high frequency device in a package, a circuit formed on a flexible substrate in the package, the circuit, the high frequency device and input/output terminals of the package being connected electrically.

Abstract: An improved printed circuit card or second level electronics package (circuit board) including a laminate of lossy material and dielectric material between the voltage supply plane (Vcc) and the ground (GND) plane. The laminate suppresses common mode noise that is generated by active components on the card or circuit board.

Abstract: An improved microwave feedthru apparatus is disclosed which provides enhanced performance over the 1-20 GHz frequency range. In its preferred embodiment the apparatus will be used to transmit microwave signals into and out of monolithic microwave integrated circuit (MMIC) packages. The apparatus utilizes a coplanar waveguide (CPW) transmission line section to guide the microwave signal through the wall of the package, substantially free of any in band resonance effects.

Abstract: A semiconductor device includes a silicon substrate on which a circuit having a predetermined function is formed and a high frequency circuit chip which is mounted on the silicon substrate and operates at high frequencies, and operates with functions of the silicon substrate and the high frequency circuit chip, wherein a thin film tape having a microstrip structure including an insulating film, a signal line on a surface of the insulating film and a grounding layer on a rear surface of the insulating film, is disposed on the silicon substrate, whereby the silicon substrate is electrically connected to the high frequency circuit chip. As a result, a conventional silicon substrate is employed and a production cost is reduced.

Abstract: A family of modular hybrid assemblies with high frequency interconnections is effected by a high frequency circuit assembly attached to a motherboard. Each assembly comprises standardized conducting elements and customizable transitions and circuit regions. The customizable transitions can be placed anywhere along the conducting element and are capable of low and high frequency performance. Attachment of the assembly can be effected via a standardized clamping structure which compresses an elastomeric member upon the conducting elements or by bending the conducting elements and soldering on end to attachment sites on the motherboard. Each member of the family of modular hybrid assemblies provides a controlled impedance transition from a transmission line on the circuit assembly to a transmission line on the motherboard.

Abstract: A surface mountable microwave IC package with broad bandwidth and low loss has been developed. The impedance mismatch due to the electrical discontinuity of the I/O pads and via holes in the structure is compensated. The compensation structure has two features. In one feature, ground planes are printed on both sides of a dielectric substrate to increase the distributed capacitance between the signal line and the ground, thereby obtaining a matched characteristic impedance. In the second feature, two grounding via holes are used to compensate for the mismatch of the charactersitic impedance due to the feedthrough via-slot connection of the signal line from the back-side to the front-side of the substrate.

Abstract: In a high frequency circuit device, inductive circuit elements constituting a matching circuit are constructed of so-called helical coils having fine metal wires wound in a hollow solenoid form, which are disposed inside a package in which a high frequency circuit element such as a surface acoustic wave element or the like is mounted. The high frequency circuit device may be utilized in equipment such as wireless communication equipment for reducing the size as well as providing good high frequency characteristics.

Abstract: The present invention discloses an apparatus for testing an integrated circuit (IC) chip having a plurality of testing ports, each of the testing ports being used for connection with an testing interface assembly for further connection with external testing equipment. The apparatus includes a testing platform having a top surface, the top surface includes a chip placement means for securely placing the IC chip therein. The testing platform further includes a plurality of guiding posts extending upwardly from the top surface. The testing apparatus further includes a frame-housing which has a plurality of inter-connected walls, each of the walls further has an inner surface including an inner beam attached thereon. The inner surface and the inner beam define an elongated vertical space corresponding to each of the guiding posts of the testing platform.

Abstract: A semiconductor device having a metalized via hole used when mounting and connecting semiconductor chips, such as microwave chips, digital chips, analog chips and the like, on a top portion of a metalized carrier substrate is described herein. Each chip includes electrical circuitry on a top portion thereof with the circuitry connected to one end of a transmission line. Another end of the transmission line is connected to a metalized via hole. The via hole passes from the top portion of the chip to a bottom portion of the chip. The chip when mounted on the substrate is positioned over the top portion of the substrate and lowered thereon either by hand or with a mechanical chip carrying device. The bottom portion of the metalized via hole is indexed over a top of one end of a transmission line on the top portion of the substrate with the indexing tolerance between the two interfacing surfaces in a range of 0.5 to 10 mils.

Abstract: A high-frequency semiconductor hybrid integrated circuit device with desirable high-frequency properties and reduced floating capacitance that is easily manufactured at lower cost with reduced labor. A coupling dielectric substrate bearing conducting films as a circuit pattern is joined to a main dielectric substrate mounted on a heat radiating plate and bearing elements for high frequency amplification to a heat sink. The coupling dielectric substrate should have the same circuit constants at the high-frequency circuit as the main dielectric substrate.

Abstract: A semiconductor circuit module is formed with external connections on coaxial pins. This provides a controlled impedance between a ground connection and a signal connection which is substantially equal per unit length. The module may be configured so that the impedance of the connection between the signal connections and integrated circuit may also be optimally impedance matched.

Abstract: This invention discloses a monolithic microwave integrated circuit (MMIC) package with filtering property. The filtering action is inherent with the structure of the package. This structure overcomes the limitation of traditional packages, which can only transmit the signal without processing the signal. A specially designed surface-mountable structure is used in the input and the output terminals. Any impedance from this special structure can be compensated by the filtering structure in each port. The filtering structure is located between the input (or the output) structure and the die cavity in each port. The package also provides ground connection to the MMIC by means of metal-filled via holes connected to the surface mounting side.

Abstract: A high frequency ceramic multi-layer substrate includes a stripline embedded between two dielectric layers having ground electrodes at the top surface and at the bottom surface thereof and an electric circuit formed on another dielectric layer applied to one of the ground electrodes. The stripline is connected to the electric circuit through via holes provided through the dielectric layers. The equivalent length from the stripline to the electric circuit is a fourth of the wavelength of an input high frequency signal, to result in a high frequency attenuation circuit. Another high frequency ceramic multi-layer substrate further includes another electrode provided via another dielectric layer of larger dielectric constant to form a capacitor with one of the ground electrodes, and another dielectric layer for forming an electric circuit thereon is applied to the electrode. The stripline is connected to the electric circuit through via holes provided through dielectric layers.

Abstract: This is a package [10] for an rf device [11] operable with a characteristic impedance providing a plurality of terminals [12-19] and [101] for effecting circuit connections to the device, the connection between at least one of the terminals and the device being matched in relation to the characteristic impedance. Other devices and methods are also disclosed.

Abstract: A package body for an integrated circuit is provided with a substrate having a mounting portion for mounting the integrated circuit. A terminal member for high speed signal input-output is provided on a portion of the substrate except the mounting portion of the substrate. A high speed signal transmission line has one end portion to be connected to the integrated circuit and the other end portion connected to the terminal member and is formed at a portion of the substrate except the mounting portion of the substrate. A plating tie-bar is formed at the substrate so as to extend from an outer periphery edge of the substrate inwardly for electrolytically plating the one end portion of the high speed signal transmission line and the terminal member.

Abstract: A planar waveguide structure for mm-wave transmitters and receivers. The active semiconductor component elements and the planar waveguide with which they are connected of the transmitters and/or receivers are arranged on the front side of a semiconductor substrate. The rear side or surface of the semiconductor substrate is at least partially formed as an inwardly or outwardly radiating surface and is geometrically shaped such that an electromagnetic property incident or emanating radiation is altered in a predetermined manner.

Abstract: A microstrip assembly (100), includes a first substrate such as a multilayer substrate (102, 106 and 112) having pockets or cavity areas (104). A second substrate (110) includes transmission lines (108) on its first surface, and a ground plane on its second surface which help form a microstrip resonator. The first and second substrates are attached with the transmission lines (108) resting inside of the areas defined by cavity areas (104). By providing an air gap on top of transmission lines (108), the microstrip assembly (100) can exhibit enhanced characteristics, while still maintaining the high Q characteristics of a microstrip.

Abstract: A novel multi-layer flexible printed circuit for tape automated bonding (TAB) is assembled from three components during the process of TAB bonding the circuit to a semiconductor device for burn in and testing prior to assembly into a system comprising a plurality of tested TAB circuit bonded devices. The first layer comprises a conductive signal plane layer mounted on top of a flexible dielectric layer. The second layer comprises a dielectric spacer layer mounted on top of the conductive signal plane layer. The third layer comprises a conductive ground plane layer mounted on the bottom of a dielectric layer. The conductive ground plane layer is mounted on top of the dielectric spacer layer. Before testing, the inner leads of the composite multi-layer circuit are bonded to the electrode pads of a semiconductor device to be tested. After testing the outer portions of the TAB circuit are cut away leaving the outer leads exposed.

Abstract: Active components of a microwave system are interconnected on a substrate by a dielectric-overlay, high-density-interconnect structure in a manner which provides close impedance matching, minimizes impedance discontinuities and substantially increases the yield of good circuits.

Abstract: A microwave integrated circuit includes a semiconductor substrate having semiconductor elements, such as transistors, diodes, resistors, and the like, and a passive circuit substrate having passive circuit elements, such as microstrip or coplanar transmission lines, spiral inductors, capacitances, and the like, on its front surface. The passive circuit substrate is mounted on the semiconductor substrate so that the rear surface of the passive circuit substrate faces the surface of the semiconductor substrate on which the semiconductor elements are present, and the semiconductor elements are electrically connected to the elements or grounding conductors of the passive circuit substrate via through-holes or bumps. The passive circuit substrate includes a thin dielectric film having less dielectric loss than the semiconductor substrate, and the passive circuit elements, especially the transmission lines, are disposed on the dielectric substrate.

Abstract: The high speed data pathway system is used to convey data signals to integrated circuits connected to mother and daughter boards. The integrated circuits include a package and an integrated circuit chip carried by the package. An internal transmission line is carried by the package and coupled to the integrated circuit chip. The package includes both input and output connections for the internal transmission line. A high speed pathway is formed by serially connecting the internal transmission lines with external transmission lines to form a unified transmission medium. Advantageously, the internal transmission lines, external transmission lines and the connection between them have substantially corresponding characteristic impedances.