Abstract: A microwave mixer suitable for millimeter wave radar applications. A semi-insulating gallium arsenide dielectric waveguide structure contains an embedded planar doped barrier (PDB) structure as a non-linear mixing element. The local oscillator (LO) signal is guided to the PDB structure via a coplanar type waveguide. The radio frequency (RF) signal is guided to the PDB structure via an image guide and a microstrip circuit serves to transmit the intermediate frequency (IF).

Abstract: A microstrip oscillator utilizing a Gunn diode as its active element for operation in the W-Band. A microstrip shunt resonator is dimensioned to resonate the Gunn diode at either its fundamental frequency or second harmonic frequency while a matching circuit, including a quarter wavelength transformer and a coupled microstrip transformer is employed to match the complex impedance of the Gunn diode device to the load. A radial hat on the Gunn diode effectively prevents radiation of electromagnetic energy from the system to thereby maximize the energy delivered to the load while, at the same time, functioning as a transformer element.

Abstract: An improved holding device for holding a semiconductor device, particularly a microwave semiconductor device, in a high temperature environmental testing apparatus. The holding device includes a heat block having a heat source therein, and a cooling block for cooling the microstrip matching circuits and coaxial connectors. Both blocks are spatially isolated from each other by an air space. The semiconductor device is set on the top surface of the heat block. As a result, the semiconductor device is effectively heated up to the predetermined testing temperature, while the microstrip matching circuits and the connectors are protected from the temperature rise caused by the heat flow from the heat block. Appropriate grounding arrangements for the semiconductor device are provided by a metal foil for projections on the side walls of the cooling block.

Abstract: A novel transition device is disclosed capable of being used in an integrated circuit comprising a substrate having a first planar surface upon which at least one circuit element is formed and a second planar surface upon which a ground metallization is formed, said first planar surface being spaced from and parallel to the second planar surface, said at least one circuit element being connected to a metal strip and having an open end terminating on said first planar surface, a coplanar grounding station disposed on the first planar surface and situated adjacent to and spaced from said open end, said coplanar grounding station being free of any electrically conducting path between said metal strip and said coplanar grounding station and between said ground metallization and said copolanar grounding station.

Abstract: An electrical short-circuit for alternating-current (ac) microwave signals is physically positionable in direct response to an electrical bias control without an intermediary electromechanical converter. The electrically positionable short circuit includes at least first and second doped regions in a semiconductor, separated by a region in which the short circuit is formed between the doped regions by the bias. A first embodiment comprises discrete diodes connected between conductors at different locations, the discrete diodes having different forward junction voltages, so that varying the common bias voltage varies the number of conducting diodes and thus positions the short circuit in a stepwise manner.

Abstract: A transistor device for a microwave oscillating element having an FET transistor chip and a package encapsulating the chip therein. In order to avoid any affection of the external circuit to the input impedance of the transistor device and to make the phase rotation low at a frequency band higher than the X band, a conductor element is provided within the package to connect the drain electrode of the chip and a corresponding terminal of the package. The conductor element has an inductance to provide a sufficient high impedance at the intended frequency band. The conductor element is supported on an insulator plate fixedly mounted within the package.

Abstract: The invention relates to a compact combiner for ultra-high frequency semiconductor devices, such as negative resistance diodes (Gunn - Impatt). The combiner according to the invention combines on a base: at least one semiconductor pellet or a plurality of semiconductor devices integrated into a single pellet at the center of the base, a first ring of capacitors as located elements, a second dielectric material ring metallized on two opposite planar faces, forming both a second capacitor and part of the encapsulation box of the combiner; and metal tapes ensuring the connections between the active components and the capacitors and simultaneously forming non-located element chokes. A metal cover welded to the outer ring seals the box and supplies the bias. The compact combiner may be used in applications of ultra-high frequency amplifiers and oscillators.

Abstract: For reduction in occupation area, there is disclosed a microwave device fabricated on a semi-insulating substrate and comprising a passive component area where a plurality of passive component elements are formed and an active component area where at least one active element is formed, the passive component area having a film overlain by a dielectric film and a strip conductor extending on the dielectric film, wherein the film and the strip conductor are formed by a superconductive material, so that the dielectric material is decreased in thickness by virtue of the strip conductor of the superconductive material.

Abstract: A microstrip IMPATT circuit tuning mechanism for use with RF producing IMPATT diode combinations including a microstrip circuit board and a external load line connected by a coupling spring attached to the load line and separated from the microstrip circuit by a dielectric layer, the coupling spring being manipulated by a dielectric screw inserted through the housing containing the microstrip board and further having a metallic frequency controlling screw extending through the housing and terminating before the microstrip board.

Abstract: A microwave diode tuning circuit including am IMPATT diode holder of coaxial form and an adjustable capacitor connected in a parallel resonant circuit by microstrip transmission line. The tuning circuit includes a stabilization network and a bias insertion network. Optionally, the tuning circuit may include a hybrid junction for coupling two such diode tuning circuits together. the diode holder includes an internally-externally threaded sleeve providing means for continuously adjusting, through a limited range, the inductance of the resonant circuit.

Abstract: An ultra high frequency circuit constructed in hybrid or integrated form whose parasite capacities are greatly reduced. The ultra high frequency circuit has, besides the components, at least one component fixing metallization and at least one microstrip formed by a metal track, on a first face of a dielectric substrate and, a ground plane metallization on a second face of the substrate. The ultra high frequency circuit is fixed to the base of a case. In order to reduce the parasite capacities formed between metallizations, the second metallized face of the substrate is locally demetallized, in line with the fixing metallization, and an air layer is introduced between the demetallized substrate and the base of the case.

Abstract: A finline structure comprises a dielectric substrate-mounted circuit disposed within a waveguide having on the substrate integrated distributed capacitance elements at least partially formed by laterally separated metallization layers. Thin-film construction techniques may be employed in construction. In general, the distributed capacitance elements permit the biasing of a plurality of circuit elements in a finline transmission medium. In selected structures, r.f. continuity is effected between traces and metallization layers while maintaining d.c. isolation. Examples are described of circuits which can incorporate an integrated capacitor, including but not limited to detectors, r.f. modulators, r.f. attenuators, amplifiers, and multipliers. According to the invention, a plurality of elements, as well as multiple port elements, may be selectively biased while retaining d.c. isolation and r.f. continuity.

Abstract: A microwave semiconductor switch wherein first and second field effect transistors and first, second and third input/output microstrip lines are integrally formed on a semiconductor substrate. The first field effect transistor is connected in series between the second input/output line and a junction point of the first, second and third input/output lines at a position adjacent to the junction point. The second field effect transistor is connected at a second position spaced approximately a quarter of the wavelength from the junction point between the second position and the ground. The drain electrodes and source electrodes of the first and second transistors are placed at the same potential. The transmission paths for microwaves are switched by varying a bias voltage applied to the gate electrodes of the field effect transistors.

Abstract: An assembly for mounting components to a microwave circuit, using plated through bore holes that extend from the ground plane of the circuit through the insulating substrate to the surface on which the components are mounted. The components have a conductive outer surface that functions as its ground plane. This surface is in electrical contact with the plated through bore holes, creating a uniform ground plane between the microstrip circuit and the component. The insulating dielectric can be provided with a recess in which the component can be housed. The base of the recess can be plated and the plated through bores connected between the cavity plating and the ground plane. The component can then be positioned inside the recess so its ground plane is in contact with plating so as to form a uniform ground plane between the circuit and the component.

Abstract: This invention relates to an ultra high speed semiconductor integrated circuit device, and in particular to a layout and connecting structure between lead terminals of a package and signal pads on a chip. The device includes a wiring board, positioned above the chip, which comprises an internal transmission line having a predetermined characteristic impedance on a dielectric insulating plate. The internal transmission line forms a strip line or coplanar transmission line including a signal line an ground conductor film. The wiring board internconnects the outer lead and bonding pads on the chip. The wiring between the internal transmission lines can cross by using a multi-layered structure. As the result of the structure of the present invention, transmission loss is reduced, and it is possible to design the wiring board having an optimum performance for ultra high speed operation of the high density integrated circuit device.

Abstract: The invention provides a coupling device between a metal wave guide (three dimensional system) and an electronic signal processing circuit (two dimensional system). The transition is provided by means of a dielectric wave guide introduced longitudinally into the metal wave guide. A chamfer cut in the dielectric guide concentrates the energy of the input signal on a face of the dielectric bar, at the interface with another dielectric material (isolated image guide). At this interface, a microstrip line transmits the energy to a semiconductor component.

Abstract: A dielectric resonator oscillator utilizing transmission-type injection-locking for frequency stabilization is disclosed as including a transistor, two microstrip lines, and a dielectric resonator. One microstrip line is coupled to the transistor, while the other microstrip line receives the broadband signal. The dielectric resonator is positioned adjacent to and between the first and second microstrip lines and is operable for coupling an injection-locking signal into the transistor for locking the oscillation frequency of the oscillator. The two microstrip lines are preferably oriented at right angles so that various sizes of the dielectric resonator can be accommodated.

Abstract: The invention relates to a device for the fine adjustment of a resonant microstrip-line formed on an insulating substrate (2), tuned by a varicap diode (7,8) which makes it possible to adjust the shape of the curve representing the tuning frequency of the strip line as a function of the direct voltage controlling the diode. One or more blind holes are provided in the surface of the substrate opposite the strip line, and a base part (15) with one or more threaded holes, into which cylinders are screwed, is fitted under the strip line. The cylinders are placed facing the blind holes and are aligned with the holes to enable entry into them. The cylinders and the base part are electrically conductive and connected to ground.

Abstract: A semiconductor device including a metallic container for containing a radio frequency semiconductor circuit on a bottom surface thereof; a cap for covering the container; and input and output terminals connected to the circuit and penetrating through a side wall of the container at locations opposite to each other. The bottom surface of the container includes space for mounting the radio frequency semiconductor circuit and supplementary space for mounting elements of a supplementary circuit. A cutoff member for increasing the cutoff frequency of the waveguide mode wave propagation between the input and output terminals within the container is provided on a part of the supplementary space, so that the cutoff frequency is higher than the wave frequency used in the radio frequency semiconductor circuit.

Abstract: A vertically polarized omnidirectional antenna adapted for use in airborne, Very High Frequency (VHF) applications is disclosed. The antenna is configured as a conductive patch spaced over its virtual image. The addition of a number of switching devices allows operation over a five-to-one bandwidth while maintaining a two-to-one Voltage Standing Wave Ratio.

Abstract: Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the periodic diode structures as the gain element of microwave amplifiers and oscillators. Preferred embodiments also place capacitors between the diodes to fix nodes in the electric field and increase the effective structure size.

Abstract: A method for fabricating a microstrip resonator line permitting precise control of line width, edge definition and thickness. On a substrate, there is printed a first conductive layer having a precisely controlled width. This first layer has a thickness less than the desired thickness of the resonator line. Further conductive layers are printed over the first layer to build up to the desired thickness of the resonator line based on skin depth requirement at the frequency of operation. Each of the further conductive layers for building the thickness of the line has a width less than that of the first conductive layer so that resonator line width is controlled by the width of the first layer.

Abstract: The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor material wherein the processing steps required for certain parts of the circuit are incompatible with the processing steps required for other parts of the circuit.

Abstract: A TEM-mode transmission line such as a microstrip or coplanar line includes a pair of conductors, at least one of which is elongated. A semiconductor junction or junctions are coupled across the conductors. If a single junction is used, the junction may be laterally elongated or distributed. If discrete semiconductor junction devices are used, plural devices may be coupled across the transmission line. The capacitance of the junction(s) controls the phase shift imparted by the transmission lines to AC signals traversing the line. The capacitance of the semiconductor junctions in controlled by light coupled into the junction region. The light is coupled to the junction region by fiber-optic cables or by means of light illuminating the junction.

Abstract: Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on dielectric to support the passive elements. Impedance-matching circuitry is preferably placed very close to (or partially overlapping) the active device, thereby eliminating detrimental device-to-circuit transition losses.

Abstract: A sampling circuit for microwave signals includes a substrate (S), a planar microwave guide (PL) on one side of the substrate and a conductive surface on the other. A slotline is formed by a rectangular insulating area (B) on the other side, and a drive pulse conductor (KX) is connected to opposite edges of the insulating area for supplying the sampling pulses. On one side of the substrate there are two separate conductive surfaces (A1,A2), which together with the conductive surface (A) on the other side forms the capacitors included in the sampling circuit. Two discrete diodes (D1,D2) are connected between the microwave guide and the respective surface (A1,A2), and resistors (R1,R2) are connected between these surfaces and planar output waveguides (UL1,UL2) for the sampling circuit.

Abstract: A slot-line for a microwave device in which is mounted at least one diode connected in parallel between two metallic strips of the slot. At high frequencies (18 to 200 GHz), the inductance L of the diode connections presents a not-negligible impedance which makes it difficult to use the diode. The device in accordance with the invention comprises a slot-line reentrant circuit which provides compensation for the diode inductance and is constituted by a metallic section which is coplanar with the line and connected in series with the diode. The compensating section is short-circuited or open-circuited with respect to the metallic strip in which it is reentrant. The electrical length of the compensating section is adjustable by means of wire, conductive varnish or metal pads.

Abstract: A metallic support supports a number of semi-conductor devices surrounded by an annular dielectric substrate which in turn supports a circuit including at least two microstrip lines and a metallic circular output element. The small thickness and high dielectric constant of the substrate are selected to permit a reduction in width and in length of the microstrip lines which are folded-back in a curvelinear fashion and placed on the substrate along circular arcs which are concentric with the output element.

Abstract: A microwave and millimeter wave amplifier consisting of a field effect travelling wave transistor monolithically integrated into a coplanar waveguide having input, output and matching sections is disclosed. The amplifier consists of a semi-insulating substrate doped on its upper surface to form within an active region of the device a doping layer of predetermined conductivity type, such as an N type layer. At the lateral edges of the active region the N type material is further doped to produce N+ type regions for receiving source electrodes, while a central part of the active region is similarly doped to produce an N+ type region for receiving a drain electrode. A gate line having a bifurcated terminal end extends into the spaces between the drain electrode and the spaced source electrodes and forms junction contacts with the N type layer in the active region.

Abstract: A solid state integrated circuit type transmission line structure is formed by a semi-conductor substrate consisting of an active layer and a semi insulating layer of given conductivities and permittivity which bears a groove extending through the active layer into the semi insulating layer of the substrate. A thin metalization coating on the active layer surface of the substrate extends into the slot along opposite slot sides thereof, and a low loss dielectric material of different permittivity at least partially fills the slot and extends between the metalization coatings of the slot. There is thus formed a slot line structure and parallel plate transmission line.

Abstract: In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures, the gain medium (the active region of the IMPATT) operates as a transmission line. The prior art has attempted to couple output power from the gain medium through an end contact, i.e., through a contact which is perpendicular to the primary direction of energy propagation (and also to the direction of maximum elongation) of the active medium. In the present invention, a sidewall contact extends in a direction which is parallel to the principal direction of propagation of the energy in the active medium. Thus, the sidewall contact plus the active region together can be considered as a single transmission line. This extended transmission line is also connected to a second distributed semiconductor element which functions as a varactor.

Abstract: The plane of the leads of a field effect transistor are spaced from a transistor housing surface a distance which may have any value in a given range. The leads are soldered or welded to respective planar conductors of a microwave circuit and the housing is soldered to a heat sink pedestal on a base. The microwave circuit is fixedly secured to the base at one end and adjustably secured to the pedestal at the other end to compensate for the variations in the spacing between the plane of the leads and the housing at that other end.

Abstract: A microwave circuit device package including a conductive housing and selectively interchangeable transmission line sections each one thereof being disposable in such housing and means for tuning and matching the impedance of the disposed transmission line section to the impedance of a device connected thereto over a relatively wide frequency band of applied signals. Such tuning means includes a conductive member of predetermined dimensions slidably mounted in proximity to a selected conductor portion of one of such transmission line sections. Such transmission line sections include a straight continuous in-line configuration for high frequencies or serpentine strip conductor configurations for low and intermediate frequencies, each one of such serpentine strip conductor configurations defining a different acute angle relative to the conductive member. The microwave circuit housing is used to test, calibrate, evaluate or characterize the properties of the connected device over the wide frequency bandwidths.

Abstract: A microwave frequency divider operable in 2-16 GHZ range over octave bandwidths. A circuit resonant at a subharmonic frequency is formed by a pair of input microstrip transmission lines coupled to a pair of output microstrip transmission lines. Each input line is terminated by a varactor diode. The input signal is supplied to the resonant circuit by a pair of microstrip lines functioning as a two stage quarter wave transformer. A pair of slots are formed in the ground plane underneath the resonant circuit. The electric field distortion thereby produced serves to bias the varactors into forward conduction for efficient subharmonic generation.

Abstract: In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures the gain medium (the active region of the IMPATT) operates as a transmission line. The prior art has attempted to couple output power from the gain medium through an end contact, i.e. through a contact which intercepts the primary direction of energy propagation of the active medium. In the present invention, a side contact extends along the whole active region in a direction which is parallel to the principal direction of propagation of the energy in the active medium. Thus, the side contact plus the active region together can be considered as a single transmission line.The present invention can be configured as an oscillator, amplifier, phase shifter, or attenuator. When configured as an oscillator, multiple short active regions can be sequentially coupled to a single long microstrip, which serves as the side contact for each of the active regions.

Abstract: A wideband microwave device for generating even harmonics of an incident microwave signal. A co-planar-type input structure conducts an incident microwave signal with an asymmetrical propagation mode. Two asymmetrical mode outputs of an equiphase divider are applied to respective inputs of two nonlinear circuit structures, whose respective output signals include even harmonics of the incident signal. The two outputs signals are combined in a circuit having an asymmetrical propagation mode output and which may be followed by a filtering circuit helping to isolate the desired even harmonic.

Abstract: A microwave oscillator and a combination microwave oscillator/single balanced mixer for a satellite television receiver includes a cylindrical dielectric resonator located on one side of a ground plane formed by a conductive foil on a substrate with microstrip transmission lines formed by foil patterns on the opposite side of said substrate. A gallium arsenide FET is disposed in a hole through said substrate with its source electrode connected to the ground plane and its drain and gate electrodes coupled to first and second transmission line strips, portions of which are following the contours of said dielectric resonator. Two sets of coupling slots are formed in the ground plane for permitting magnetic coupling between the dielectric resonator and the opposite transmission line strips. In one embodiment an additional coupling slot in the ground plane couples the dielectric resonator to an output transmission line strip.

Abstract: A planar oscillator (9, 109) having a dielectric cavity (25, 125) and which is operative at microwave frequencies, said oscillator consisting of a dielectric material base (10, 110) one surface of which has, superposed thereto, a continuous layer (11,111) of a conductive material which coats portions of said face; the remaining portions (10A, 10B, 110A', 110A", 110B) of the surface have, superposed thereto, strips of a conductive material (12,13,14,112,113,114) which are separate from each other and are electrically connected to an active element (19, 119), a dielectric cavity (25,125) adhering to the opposite surface of the dielectric material base (10,110), the layer of conductive material (11,111) providing a grounding plane and the strips of conductive material (12,13,14,112,113,114) providing transmission and output lines for the oscillator.

Abstract: An improved microwave multi-throw switch incorporating PIN diodes wherein the PIN diodes are mounted orthogonally to the conductive stripline.

Abstract: An arrangement for applying a DC bias current to an RF active component, such as a field effect transistor, serially-connected with an RF transmission line. The biasing current is supplied by a transmission line section connected at a junction to the transmission line. Two conductive strips, connected in parallel with the transmission line, on opposite sides of the junction, form a band-pass filter. Each of these strips is situated at a distance from the junction which is equal to approximately one-eighth of the wavelength of the signal frequency transmitted on the transmission line.

Abstract: An impedance matching network for coupling a microwave transmission line to a field effect transistor (FET). The impedance matching network includes a resistor coupled in shunt with the FET and an inductor connected between the microwave transmission line and the resistor. The inductor is formed by wrapping a conductive wire around a post inserted into a hole formed in a support for the FET.

Abstract: A microwave detector arrangement operable over a broad range of frequencies including the series resonant frequency of a detector diode (9) for detecting microwave energy in a transmission line of characteristic impedance Z.sub.o, suitably a coplanar line. A first portion of line, including a strip conductor (3), is terminated by a network, including a capacitance (4) and a first resistance (5) in series with one another and with the parallel combination of a second resistance (6) and the diode (9). The capacitance (4) provides D.C. isolation, while the detector output is taken across a capacitance (10) in series with the diode (9). The first and second resistances (5,6) are respectively 2Z.sub.o /3 and 3Z.sub.o /2, so that the terminating impedance provides a reasonable match to the line over a broad frequency range.

Abstract: The invention provides circuit matching elements primarily for integrated circuits and particularly for monolithic microwave integrated circuits.A transmission line in accordance with the invention is provided with a thin metallic film deposition disposed in the signal propagation path. The effect of the film is to increase the specific capacitance of the line without decreasing the specific inductance. The result is a slowing down and therefore a decrease of the wavelength of signals in the line.An example of an implementation of the invention is a coplanar waveguide having a central thick conducting line element (32) and outer thick conducting line elements (28,30) mounted on a substrate (21). The central element overlies a thin metallic film (22) which also underlies the outer conducting line elements and is insulated from the latter by polyamide insulation (24,26).

Abstract: An apparatus for coupling a waveguide structure to a printed circuit transmission line connected to a solid state device requiring a DC bias comprising: a hollow waveguide connector; a base mounted onto that connector and supporting the transmission line; a transition element, preferably a coupling ridge, for RF coupling the waveguide connector to the transmission line; a connecting means for feeding the DC bias voltage from an external bias network through the wall of the waveguide connector and the transition element to the transmission line. The connecting means, and the transition element are DC insulated from the other parts of the waveguide connector. The built-in DC bias eliminates the need for biasing networks, RF chokes, filters and DC blocks mounted on the printed circuit.

Abstract: An improved microwave circuit is disclosed for enabling impedance tuning for power coupling in IMPATT diode and other similar oscillator and amplifier circuits. An electrically conductive support plate forming a ground plane is machined to form a channel for slidably receiving an air-stripline transmission line and a resonator therein. An IMPATT diode is positioned within the channel through an opening extending through the support plate generally perpendicular to the channel and is positioned in contact with the resonator. An electrically conductive bias filter is coupled to the resonator and to an adjusting mechanism for moving the resonator along the channel and providing a DC bias to the diode for oscillation. An electrically conductive cover member retains a spring biased electrically non-conductive projection for maintaining the resonator in contact with the diode.

Abstract: A high frequency, hermetically-sealed, semiconductor device with the capability of being cascade-connected with corresponding devices in an advantageous manner. The device consists of a function element which includes at least one semiconductor and other circuit elements necessary for forming a functional amplifier, a DC power circuit for operating the device and high frequency circuits for connecting to corresponding high frequency devices. This device also consists of a metal base substrate, which is used for anchoring the device and mounting other parts of the device thereon, an insulating substrate having a plurality of independent metallized layers used as external contacts and a sealing part for hermetically sealing that part of the insulating substrate which mounts and encloses the function element.

Abstract: A fin line apparatus, within a rectangular waveguide, for detecting R.F. signals utilizes metallic film conductors, disposed on both surfaces of a planar dielectric centered in the waveguide parallel to its sidewalls, for forming aligned channels, a first of which couples R.F. signals to a diode which provides rectified signals to a metallic film filter disposed in a gap in a conductor which opens into the first channel.

Abstract: A microstrip integrated circuit reflection amplifier utilizing packaged diodes and permitting some gain and bandwidth adjustment. A 3 db quadrature coupler has two of its ports connected to substantially identical reflection amplifiers. The reflection diodes are adjustably mounted in brackets perpendicular to the dielectric substrate of the microstrip network and may be moved in and out along the microstrip circuit to provide for some gain correction and bandwidth adjustment.

Abstract: An optimized transmission line switch comprises a first high frequency diode and means for counteracting the capacitive component of the first diode. Unpackaged diode chips are utilized to avoid parasitics introduced by diode packages. A two diode switch installed in a reduced height waveguide section provides isolation comparable to prior art switches while providing greatly improved insertion loss.

Abstract: A transistor package having input, reference (ground) and output terminals includes a ceramic base metallized to provide a ground plane and an isolated collector pad; and also includes a transistor die disposed on the pad. An equivalent output circuit of the transistor die describes an output impedance having a capacitive reactance. Pairs of wires are connected from the ground plane to the collector pad in series with DC blocking capacitors to provide an inductive reactance in parallel with the capacitive reactance of the transistor die. The pairs of wires are disposed in a transverse, preferably a substantially perpendicular, relationship and are connected to the collector pad at distributed, preferably uniformly distributed, positions along such area. This provides for a substantially uniform distribution of current throughout the transistor die and a substantially uniform junction temperature throughout the die.