Abstract: An NTC thermistor to be embedded in a substrate includes a thermistor body that is a ceramic sintered body and includes two opposed main surfaces, two opposed side surfaces, and two opposed end surfaces, a plurality of internal electrodes provided inside the thermistor body, and two external electrodes provided on outer surfaces of the thermistor body, and electrically connected to the plurality of internal electrodes. Each of the external electrodes includes a first electrode layer covering one of the end surfaces of the thermistor body, a second electrode layer provided on each of the main surfaces of the thermistor body, the second electrode layer including at least one layer, one end of the second electrode layer being in contact with the first electrode layer, and another end thereof extending in a direction of another end surface, and a third electrode layer including at least one layer and covering the first electrode and the second electrode layers.

Abstract: Provided is a thin-film resistor that has a higher resistance value than the conventional thin-film resistors while retaining excellent TCR characteristics. The thin-film resistor includes a substrate, a pair of electrodes formed on the substrate, and a resistive film connected to the pair of electrodes. The resistive film includes a first resistive film and a second resistive film, the second resistive film having a different TCR from that of the first resistive film, and each of the first resistive film and the second resistive film contains Si, Cr, and N as the main components.

Abstract: The invention is to provide a chip resistor suitable for lowering an initial resistance value. A chip resistor 1 according to the present invention is provided with: an insulating substrate 2; a pair of front electrodes 3 which are provided on a front surface of the insulating substrate 2 so as to face each other with a predetermined interval therebetween; a resistive element 4 which is provided so as to bridge the front electrodes 3; a pair of auxiliary electrodes 5 which are provided so as to cover the front electrodes 3 and overlap end portions of the resistive element 4; and the like. The chip resistor 1 is configured such that: the front electrodes 3 are formed of a material which contains 1 to 5 wt % Pd and the balance Ag; and the auxiliary electrodes 5 are formed of a material which contains 15 to 30 wt % Pd and a metal material (e.g. Au) lower in resistivity than Pd and the balance Ag.

Abstract: A low-ohmic chip resistor with high conductivity is fabricated. The chip resistor has an electrode of a base metal or base-metal alloy. The base-metal or base-metal-alloy electrode and a resistor layer are fabricated through thick-film printing with sintering at a low temperature in the air. Therein, a thick-film paste made of a cheap low-reduction-potential metal (such as aluminum (Al) or nickel (Ni)) is formed through screen-printing and sintering. Then, the layer of the cheap low-reduction-potential metal is used as a sacrificial layer to be immersed in a metal solution having a high reduction potential. Therein, a wet chemical alternation reaction is processed for obtaining a metal electrode having the high reduction potential. Or, the sacrificial layer may be immersed in a mixed solution of several different metal having high reduction potential to process wet chemical alternation reaction for obtaining an alloy of metal mixed with different composition.

Abstract: The present technique relates to an earhole-wearable sound collection device, a signal processing device, and a method for realizing sound collection at a high S/N ratio. In the earhole-wearable sound collection device, a microphone that collects emitted speech voice is provided in a space that is substantially sealed off from outside and connects to an ear canal of the wearer (the speaker). With the microphone being located in the space sealed off from outside, emitted speech voice that propagates through the ear canal of the wearer is collected. In a sound collection signal obtained through the ear canal, the emitted speech voice component is dominant over the noise component particularly at low frequencies. Therefore, the S/N ratio of an emitted speech voice collection signal is improved by an equalizing process for reducing muffled sound that is generated when sound is collected through the ear canal on the sound collection signal.

Abstract: Proposed is a contact material constituting a slider for a fuel sender, the slider moving on a conductor in conjunction with a float moving in accordance with a liquid level, wherein the contact material includes 10 to 25 mass % of nickel and a balance of palladium. The present contact material is useful in the light of material cost in addition to corrosion resistance and durability. The fuel sender is useful for vehicles, such as FFV, using composite fuel of alcohol and the like. The present invention allows for producing a slider for a fuel sender having excellent corrosion resistance and abrasion resistance.

Abstract: A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant.

Abstract: A semiconductor device structure including a resistor layer is provided. The semiconductor device structure includes a gate structure formed over the first region of the substrate and an inter-layer dielectric (ILD) layer formed adjacent to the gate structure. The semiconductor device structure further includes a resistor layer is formed over the ILD layer over the second region of the substrate, and the major structure of the resistor layer is amorphous.

Abstract: An apparatus for determining a status of a medical device component is disclosed. The apparatus includes at least one fusible component to indicate whether the medical device component has been used, and at least one reference component having at least one reference property that is representative of the presence, identity or type of the medical device component. The reference component is non-fusible under ordinary operating conditions.

Abstract: A chip resistor includes a base member, a resistive element formed on the base member, a first inner electrode held in contact with a first end portion or the resistive element, a second inner electrode held in contact with a second end portion of the resistive element, a first reverse surface electrode reaching a first end portion of the base member, and a second reverse surface electrode reaching a second end portion of the base member. The length of the first and the second reverse surface electrodes is in a range of 2/10 to 3/10 of the length of the base member. Also, the length of the first and the second reverse surface electrodes is greater than the length of the first and the second inner electrodes.

Abstract: A chip resistor having terminal electrodes is provided. In the chip resistor, a first protector layer has a size different from that of a first resistor layer. Thus, two ends of the first resistor layer are exposed to form new current conduction path. Original current conduction path having the same size of the protective layer and the resistor layer is thus replaced. Hence, resistance variation of the chip resistor is solved; yield of the chip resistor is increased; and, the material cost of the front terminal electrode is greatly reduced.

Abstract: Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. Optionally the glass is (by weight) 25-45% SiO2, 2-15% Al2O3, 0-3% ZrO2, 0-8% B2O3, 5-15% CuO, 0-8% BaO, 0-3% P2O5, and 20-50% Bi2O3. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.

Abstract: In one embodiment, a programming circuit is configured to form a programming current for a silicide fuse element by using a non-silicide programming element.

Abstract: An electronic device comprising a semiconductor structure having a back end capacitor and a back end thin film resistor and a method of manufacturing the same. The semiconductor structure includes a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. The bottom plate and the resistor body are laterally spaced apart portions of the same thin film layer. The bottom plate further includes a conductive layer overlying the thin film layer. A second dielectric layer is disposed on the conductive layer of the bottom plate of the capacitor. A top plate of the capacitor is disposed on the second dielectric layer.

Abstract: A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP1) having an oscillation circuit utilizing a reference resistor. The oscillation circuit generates a reference current by utilizing the reference resistor, a voltage is generated in accordance with this reference current and an oscillation frequency of the oscillation unit, and the oscillation unit oscillates at a frequency in accordance with the generated voltage.

Abstract: Some aspects of the present disclosure relate to a sensor design that exploits the different majority carriers (holes/electrons) in WO3 and Cr2O3 to build sensitivity and selectivity to NO at ppb levels, while discriminating against CO at concentrations a thousand-fold higher (ppm) and spread over a considerable range (0-20 ppm). Practical application of this sensor system for detecting NO in human breath is demonstrated.

Abstract: A resistor is formed on field oxide with a portion of the resistor body configured to overlap an active region in an integrated circuit (IC) substrate to provide heatsinking for the resistor body. In one embodiment, cooling fingers extend from the resistor body beyond the field oxide to overlap the active region. In another embodiment, minor areas of the resistor body overlap the active region. The resistor body may be formed of polycrystalline silicon (polysilicon), silicided polysilicon, or metal. An oxide having greater thermal conductance than the field oxide is formed between the overlapping parts of the resistor body and the active region.

Abstract: A method and measuring sensor are disclosed for measuring temperature, the method including arranging a measuring element of the sensor into thermal contact with a process liquid being measured, and directing a measuring signal received from the measuring element onward by measuring conductors connected to the measuring element. Close to the measuring element, terminal areas are established which are arranged in unrestricted thermal contact with the process liquid being measured, and the measuring conductors are connected to the measuring element through the terminal areas.

Abstract: A chip resistor includes a resistor board, a first electrode, a second electrode and an insulating layer. The second electrode is offset from the first electrode in a lateral direction perpendicular to the thickness direction of the resistor board. The obverse surface of the resistor board includes a first region in contact with the first electrode, a second region in contact with the second electrode and an intermediate region in contact with the insulating layer. The intermediate region is disposed between the first region and the second region in the lateral direction. The first electrode includes a first underlying layer and a first plating layer. The first underlying layer is disposed between the first plating layer and the insulating layer in the thickness direction of the resistor board.

Abstract: A method of manufacturing a resistor paste comprising steps of: (a) preparing a basic resistor paste comprising, (i) a conductive powder, (ii) a first glass frit, and (iii) a first organic medium; and (b) preparing a glass paste as a TCR driver comprising, (iv) a second glass frit comprising manganese oxide, and (v) a second organic medium, (c) adding the glass paste to the basic resistor paste to obtain a resistor paste with a desired TCR.

Abstract: The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer.

Abstract: The present invention is to provide a heating substrate equipped with a conductive thin film and electrodes. The heating substrate includes a transparent substrate, a plurality of electrodes formed on a first face of the substrate, and a conductive thin film formed on the first face of the substrate and including a plurality of regions electrically connected each other in parallel by the plurality of electrodes. Furthermore, a method of manufacturing a heating substrate equipped with a conductive thin film and electrodes according to an exemplary embodiment of the present invention includes forming the conductive thin film on a substrate, forming main electrodes so as to extend on the substrate while being adjacent to edges of the conductive thin film, and forming branched electrodes that are extended from the conductive thin film across one side of the conductive thin film while coming in contact with the conductive thin film.

Abstract: A resistor component is provided, including a ceramic bar having a film applied thereon, a protection layer formed on the film in a middle portion of the ceramic bar, an end plating layer formed on the film at two ends of the ceramic bar, an insulation layer formed on the protection layer, and a color coded marking formed on the insulation layer that indicates the resistance of the resistor component. The end plating layer is formed by a barrel plating method and includes copper, tin, nickel and a combination thereof. The resistor component thus has a low cost and is manufactured by a simple process, simultaneously avoids the occurrence of pores or incompletely sealed join that may be caused by the prior method. Therefore the resistor component has high reliability.

Abstract: The resistance of a thin-film resistor is substantially increased by forming the thin-film resistor to line one or more non-conductive trenches. By lining the one or more non-conductive trenches, the overall length of the resistor is increased while still consuming approximately the same surface area as a conventional resistor.

Abstract: The resistance of a thin-film resistor is substantially increased by forming the thin-film resistor to line one or more non-conductive trenches. By lining the one or more non-conductive trenches, the overall length of the resistor is increased while still consuming approximately the same surface area as a conventional resistor.

Abstract: There are provided a chip resistor and a method of manufacturing the same. The chip resistor includes a ceramic substrate; an adhesion portion formed on a surface of the ceramic substrate; and a resistor formed on the adhesion portion, wherein the adhesion portion includes at least one of copper (Cu), nickel (Ni), and copper-nickel (Cu—Ni).

Abstract: The present invention provides a metal foil provided with an electrical resistance layer, in which peeling between the metal foil and the electrical resistance layer disposed on the metal foil can be prevented and variation in the resistivity of the resistance layer can be reduced, and a method of manufacturing the same. The present invention includes a metal foil with an electrical resistance layer including a metal foil having a surface of a ten-point mean roughness Rz, which is measured by an optical method according to 1 ?m or less and the surface being treated by irradiation with ion beams at an ion beam intensity of 0.70-2.10 sec·W/cm2 and an electrical resistance layer disposed on the surface of the metal foil.

Abstract: The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.

Abstract: The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer.

Abstract: A method and device for measuring the soot load in the exhaust gas systems of diesel engines using a sensor which is mounted downstream of a particulate filter and comprises a sensor element, to measure the operability of the particulate filter. According to the method, the soot load of the sensor element is measured resistively or capacitively using electrodes. The measuring voltage of the sensor element is controlled depending on at least one actual operating parameter of the diesel engine.

Abstract: There is disclosed a honeycomb structure including a honeycomb structure section, and a pair of band-like electrode sections arranged on a side surface of the honeycomb structure section, an electrical resistivity of the honeycomb structure section is from 1 to 200 ?cm, in a cross section which is perpendicular to a cell extending direction, the one electrode section is disposed on an opposite side of the other electrode section via the center O, an angle which is 0.5 time as large as a central angle of the electrode section is from 15 to 65°, and each of the electrode sections is formed so as to become thinner from a center portion in a peripheral direction toward both ends in the peripheral direction, and in the cross section which is perpendicular to the extending direction of the cells, the whole outer peripheral shape is a round shape.

Abstract: A solution for producing nanoscale thickness resistor films with sheet resistances above 1000?/? (ohm per square) and low temperature coefficients of resistance (TCR) from ?50 ppm/° C. to near zero is disclosed. In a preferred embodiment, a silicon-chromium based compound material (cermet) is sputter deposited onto a substrate at elevated temperature with applied rf substrate bias. The substrate is then exposed to a process including exposure to a first in-situ anneal under vacuum, followed by exposure to air, and followed then by exposure to a second anneal under vacuum. This approach results in films that have thermally stable resistance properties and desirable TCR characteristics.

Abstract: A system for effectively defrosting a plastic window includes a transparent plastic panel, a heater grid having a plurality of grid lines that are integrally formed with the plastic panel, and equalizing means for equalizing the electrical current traveling through each of the grid lines.

Abstract: The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.

Abstract: To eliminate the substrate voltage dependences of the respective resistance values of resistor elements, in the resistor elements coupled in series to each other over respective substrate regions, the ends of the resistor elements are coupled to the corresponding substrate regions by respective bias wires such that respective average potentials between the substrate regions of the resistor elements and the corresponding resistor elements have opposite polarities, and equal magnitudes.

Abstract: The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer.

Abstract: A higher precision resistive element suppresses variation of the resistance value due to variation of film thickness. A resistive element includes a first portion having a first film thickness and a first width, and a second portion having the first film thickness and a second width determined by the first width. The sum of the first and second widths is constant. The first portion has an upper surface at a position at which a height from the bottom surface of the resistive element first portion is a first height. The resistive element second portion has an upper surface of the resistive element second portion at a position at which a height from a surface including the bottom surface of the resistive element first portion is the first height. The resistive element first portion and the resistive element second portion are coupled to each other via a coupling portion.

Abstract: A metal strip resistor includes a resistor body having a resistive element formed from a strip of an electrically resistive metal material and a first termination electrically connected to the resistive element to form a first junction and a second termination electrically connected to the resistive element to form a second junction, the first termination and the second termination formed from strips of electrically conductive metal material. The resistive element, the first termination, and the second termination being arranged mitigate thermally induced voltages between the first junction and the second junction.

Abstract: A variable attenuator, including at least a one-stage attenuator circuit, including at least a signal input end, a signal output end, a common grounded end, a first serial resistor, a first parallel resistor, a first parallel switch, and a first serial switch. The first serial resistor is disposed between the signal input and the signal output end. The signal input end, the signal output end, and the first serial resistor form a main signal circuit. The first parallel resistor is connected between the main signal circuit and the common grounded end. The first parallel switch is connected in parallel with the first serial resistor, and the first serial switch is connected in series with the first parallel resistor. During operation of the variable attenuator, as the parallel switch is switched on to eliminate attenuation, the serial switch is switched off.

Abstract: To provide a glazed metal film resistor device excellent in TCR characteristics with using an economical base body containing glass by reducing affection to TCR characteristics caused by glass contained in the base body. The resistor device comprises base body 11 containing glass, first protective film 12, which does not contain glass, formed on a surface of base body 11, and thick film resistor 13 formed on first protective film 12. By forming first protective film 12 on a surface of base body 11 containing glass and insulating base body 11 containing glass against thick film resistor 13 of ruthenium oxide as primary component, affection of glass contained in base body 11 to thick film resistor 13 of ruthenium oxide can be suppressed, and change of TCR value from original value of thick film resistor itself can be suppressed.

Abstract: A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation is disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots are located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals. The fine TCR calibration slot has a depth selected to obtain a TCR value observed at the voltage sense terminals that approaches zero. The resistor can also have a resistance calibration slot located between the pair of main terminals. The resistance calibration slot has a depth selected to calibrate a resistance value of the resistor.

Abstract: A higher precision resistive element suppresses variation of the resistance value due to variation of film thickness. A resistive element includes a first portion having a first film thickness and a first width, and a second portion having the first film thickness and a second width determined by the first width. The sum of the first and second widths is constant. The first portion has an upper surface at a position at which a height from the bottom surface of the resistive element first portion is a first height. The resistive element second portion has an upper surface of the resistive element second portion at a position at which a height from a surface including the bottom surface of the resistive element first portion is the first height. The resistive element first portion and the resistive element second portion are coupled to each other via a coupling portion.

Abstract: A coated wire is solderable with soft solder while maintaining separate phases of the core and the coating. A 100 ?m to 400 ?m thick nickel wire may be coated galvanically with silver. For a film resistor with coated wires as connection wires, including a platinum measurement resistor on an electrically insulating substrate and connection wires connected to the measurement resistor, the connection wires have a coated nickel core. The coating may be made of silver or glass or ceramic or a mixture of these materials, or on its outside may be made of glass or ceramic or a mixture of these materials. For producing film resistors a thin metal or glass component is deposited on a connection wire connected to a track conductor arranged on an electrically insulating substrate, and a thick glass paste is deposited and fired on this metal or glass component. For mass production of film, several film resistors encased together in glass may be partitioned by fracturing.

Abstract: An electrical multilayer component has a stack of dielectric layers and electrode layers arranged one above another. Electrode layers of identical electrical polarity are jointly contacted to an external contact arranged at a side face of the stack. A resistor sintered to the stack and containing ceramic resistance material is arranged on an end face of the stack.

Abstract: The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.

Abstract: A method for producing an electrical resistor, in particular a current sensing resistor, on a substrate, a resistor blank being placed on the substrate and then being heat-treated to form the resistor. To form the resistor blank, a palladium layer is applied to the substrate and a silver layer is applied to the palladium layer, or a silver layer is applied to the substrate and a palladium layer is applied to the silver layer, and the palladium of the palladium layer is then completely alloyed with the silver of the silver layer by heat treatment.

Abstract: The invention discloses a variable attenuator, comprising two or more resistors each resistor having its own effective resistance value, and means for simultaneously short circuiting at least a portion of two or more of said resistors, whereby simultaneously changing the effective resistance values. The variable attenuator of the invention is suitable for use in various high frequency and microwave circuits and systems, and has the features of a wide frequency band, small size, easy fabrication, low cost, and so on.

Abstract: A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.

Abstract: The invention relates to an RF resistor, and in particular an RF terminating resistor, having a planar layer structure which has, on a substrate (16), a resistive layer (10) for converting RF energy into heat, an input conductor track (12) for the infeed of RF energy, and an earthing conductor track (14) for making an electrical connection to an earth contact, the input conductor track (12) being electrically connected to a first end (18) of the resistive layer (10), the earthing conductor track (14) being electrically connected to a second end (20) of the resistive layer which is opposite from the first end (18), and the resistive layer (10) being bounded, between the first end (18) and the second end (20), by lateral faces (26) in a direction perpendicular to a direction of propagation (22) of the RF energy in the resistive layer (10) and perpendicular to a normal (24) to the planar layer structure, the resistive layer (10) having at least one incision, which at least partly constricts the cross-section of

Abstract: A heating system in the form of a multi-layer, yet relatively thin and flexible panel. The panel contains a number of layers including first, second and third electrically insulating layers. A first electrically conductive resistive layer (heater layer) is sandwiched between the first and second insulating layers. A second electrically conductive resistive layer (resistive neutral plane layer) is sandwiched between the second and third insulating layers. The heater layer has a neutral electrical connection and a live electrical connection. The neutral and live electrical connections are electrically connected to each other at the panel only by electrically resistive material of the heater layer extending between the neutral and live electrical connections. The resistive neutral plane layer has a neutral electrical connection electrically connected with the neutral connection of the heater layer.