Abstract: A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.

Abstract: A method for forming an electrical heating element by flame spraying a metal/metallic oxide matrix, wherein a flame sprayed metal/metallic oxide matrix is deposited onto an insulating or conductive substrate such as to have a higher resistance than is required for a designed use, and an intermittently pulsed high voltage DC supply is applied across the matrix such as to produce continuous electrically conductive paths through the matrix which permanently increase the overall conduction and simultaneously reduce the overall resistance of the metal/metallic matrix to achieve a desired resistance value.

Abstract: An apparatus and methods for attaching electrical leads (22, 24) to a heating layer (16) of a heater are provided. An attachment material (50) is thermally sprayed over cords (32) of the electrical leads (22, 24), which are in contact with the heating layer (16) over a contact area (20). The attachment material (50) and the heating layer 16 are further thermally sprayed with a layer (52), which is an isolating material. The thermal sprayed connection between the electrical leads (22, 24) and the heating layer (16) thus provides more intimate contact and an improved electrical connection.

Abstract: A chip resistor (1) according to the present invention includes an insulating substrate (2) which is in the form of an elongated rectangle in plan view, a pair of upper electrodes (3, 4) in the form of a strip formed on the upper surface of the insulating substrate (2) at portions adjacent to the long side surfaces of the insulating substrate to extend along the side surfaces, a resistor film (5) formed on the upper surface of the insulating substrate (2) and electrically connected to the upper electrodes (3, 4), and a pair of terminal electrodes (6, 7) formed on the two long side surfaces of the insulating substrate and electrically connected to the upper electrodes (3, 4), respectively. One of two longitudinal ends of the resistor film (5) is connected to one of the upper electrodes (3), whereas the other one of the two longitudinal ends of the resistor film is connected to the other one of the upper electrodes (4).

Abstract: An adjustable resistor embedded in a multi-layered substrate and method for forming the same. The adjustable resistor comprises: a planar resistor, having a plurality of terminals; and a plurality of connecting lines connected to the planar resistor, each of the connecting lines being drawn from each of the terminals of the planar resistor so as to form a resistor network, wherein the connecting lines are selectively broken by a process for drilling the substrate to form a number of combinations of opened connecting lines such that the resistance value of the adjustable resistor is varied and thus the resistance value of the adjustable resistor can be precisely adjusted.

Abstract: The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.

Abstract: A ceramic heater includes a core material and a ceramic sheet covering the core material, and wherein a side of the ceramic sheet opposite the core material is an outer side of the ceramic heater. A method for manufacturing the ceramic heater includes forming a through hole in a ceramic sheet which is diametrically enlarged from a first surface toward a second surface of the ceramic sheet, forming a via conductor, forming on the second surface a heating portion and lead portion for connecting the heating portion and the via conductor, and covering a core material with the ceramic sheet such that the first surface faces an outer side of the ceramic heater.

Abstract: The present invention provides a poly-resistor with an improved linearity. Majority charge carrier wells are provided under the poly-strips and are biased in such way that the non-linearity of the resistor is reduced. Further, when such poly-resistors are used in amplifier circuits, the gain of the amplifier remains constant against the poly-depletion effect.

Abstract: A solution for producing nanoscale thickness resistor films with sheet resistances above 1000?/? (ohm per square) and low temperature coefficients of resistance (TCR) from ?50 ppm/° C. to near zero is disclosed. In a preferred embodiment, a silicon-chromium based compound material (cermet) is sputter deposited onto a substrate at elevated temperature with applied rf substrate bias. The substrate is then exposed to a process including exposure to a first in-situ anneal under vacuum, followed by exposure to air, and followed then by exposure to a second anneal under vacuum. This approach results in films that have thermally stable resistance properties and desirable TCR characteristics.

Abstract: A ceramic heater according to the present invention includes a heating portion made of ceramics, and a cooling plate portion. In the heating portion, a belt like printed electrode is formed continuously in a spiral shape along a circumferential direction, and in the printed electrode, slits extended in a width direction of the printed electrode are provided. In such a way, a ceramic heater in which uniform heating performance in the heating surface is high can be obtained.

Abstract: An electrical multilayer component has a stack of dielectric layers and electrode layers arranged one above another. Electrode layers of identical electrical polarity are jointly contacted to an external contact arranged at a side face of the stack. A resistor sintered to the stack and containing ceramic resistance material is arranged on an end face of the stack.

Abstract: An electrical structure. The electrical structure includes a resistor having a length L and an electrical resistance R(t) at a time t; and a laser radiation directed onto a portion of the resistor, wherein the portion of the resistor includes a fraction F of the length L, wherein the laser radiation heats the portion of the resistor such that the electrical resistance R(t) instantaneously changes at a rate dR/dt, and wherein the resistor is coupled to a semiconductor substrate.

Abstract: A metal strip resistor includes a resistor body having a resistive element formed from a strip of an electrically resistive metal material and a first termination electrically connected to the resistive element to form a first junction and a second termination electrically connected to the resistive element to form a second junction, the first termination and the second termination formed from strips of electrically conductive metal material. The resistive element, the first termination, and the second termination being arranged mitigate thermally induced voltages between the first junction and the second junction.

Abstract: An embedded resistor and capacitor circuit and fabrication method is provided. The circuit includes a substrate, a conductive foil laminated to the substrate, and a thick film dielectric material disposed on the conductive foil. One or more thick film electrodes are formed on the dielectric material and a thick film resistor is formed at least partially contacting the thick film electrodes. A capacitor is formed by an electrode and the conductive foil. The electrodes serve as terminations for the resistor and capacitor.

Abstract: Embodiments of a resistor are disclosed.

Abstract: A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.

Abstract: A thin film resistor (5) of an integrated circuit comprises an elongate resistive film (7) extending between electrical contact pads (10,11). A low impedance element (20) overlays and is electrically coupled to a portion of the resistive film (7) in an intermediate portion (22) thereof adjacent a second side edge (17) of the resistive film (7) for conducting current in parallel with the intermediate portion (22), and for reducing current density in the intermediate portion (22). First and second transverse edges (28,29) formed by spaced apart first and second slots (26,27) which extend from a first side edge (16) into the resistive film (7) define with a first side edge (16) of the resistive film (7) and the low impedance element (20) first and second trimmable areas (30,31) in the intermediate portion (22).

Abstract: A compound resistor is used to compensate for trimming induced shift in temperature coefficient of resistance of a trimmable resistor. The compound resistor is composed of a first and second portion, at least one of the two portions being thermally trimmable, and the parameters for the first and second portion are selected such that the trimming induced shift can be minimized on an overall resistance and temperature coefficient of resistance of the compound resistors by trimming the trimmable resistor. The invention also allows for exploring trimming range available via true thermal trimming without actually trimming out resistor's value of a resistor. The invention also allows design of thermal isolation to minimize or optimize resistance variation of the overall compound resistance.

Abstract: To eliminate the substrate voltage dependences of the respective resistance values of resistor elements, in the resistor elements coupled in series to each other over respective substrate regions, the ends of the resistor elements are coupled to the corresponding substrate regions by respective bias wires such that respective average potentials between the substrate regions of the resistor elements and the corresponding resistor elements have opposite polarities, and equal magnitudes.

Abstract: A method for producing an electrical resistor, in particular a current sensing resistor, on a substrate, a resistor blank being placed on the substrate and then being heat-treated to form the resistor. To form the resistor blank, a palladium layer is applied to the substrate and a silver layer is applied to the palladium layer, or a silver layer is applied to the substrate and a palladium layer is applied to the silver layer, and the palladium of the palladium layer is then completely alloyed with the silver of the silver layer by heat treatment.

Abstract: A thin-film resistor that has a stable electric resistance, the phase transformation to the ?-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a ?-phase tantalum film or an alloy film mainly containing ?-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the ?-phase crystal is most strongly oriented to the layer surface.

Abstract: The metal foil resistor having a metal foil resistive element 20 composed of a metal foil whereupon a resistance circuit pattern is formed. The metal foil resistor comprises: a package 10 which contains the metal foil resistive element 20 in an electrically insulated state so that the resistive element can be expandable and contractible in a spreading direction of the metal foil; and a relay terminal 26 which is held in the package 10 in the electrically insulated state and is connected to an electrode 20a of the metal foil resistive element 20. A temperature coefficient of resistance can be reduced and stabilized. Control factors can be reduced to increase degrees in freedom in designing. Further, an external stress applied to a package is prevented from transmitting to the metal foil resistive element, and therefore the package can be easily attached to a discretionary heat sink.

Abstract: A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ? of at least 0.02 ?-cm (typically 0.02-1.0 ?-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 k?/? may also be obtained. The resulting thin film is preferably at least 200 thick, to reduce surface scattering conduction currents.

Abstract: The invention relates to a surface-modified RuO2 conductive and a lead-free powdered glass material formulated to make a paste suitable for application to the manufacture of a thick film resistor material. The resistance range that is most suitable to this invention is a resistor having 10 kilo-ohms to 10 mega-ohms per square of sheet resistance. The resulting resistors have ±100 ppm/° C. TCRs.

Abstract: An electronic component and a method for producing the electronic component achieve efficient production of resistive elements with various resistances. The electronic component includes a pair of terminals opposite each other and a resistive element disposed between the pair of terminals. The resistive element includes a plurality of dots arranged so as to overlap each other in a reference arrangement pattern excluding a portion of the arrangement pattern. To produce the electronic component, an electronic component is prototyped in advance and includes a resistive element in which the dots are arranged in the entire reference arrangement pattern between the pair of terminals. The prototyped resistive element is then partially removed so as to attain a desired resistance. An electronic component is then produced in which the dots are arranged in the reference arrangement pattern with a portion of the arrangement pattern excluded on the basis of the shape of the partially removed resistive element.

Abstract: A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.

Abstract: The invention relates to an RF resistor, and in particular an RF terminating resistor, having a planar layer structure which has, on a substrate (16), a resistive layer (10) for converting RF energy into heat, an input conductor track (12) for the infeed of RF energy, and an earthing conductor track (14) for making an electrical connection to an earth contact, the input conductor track (12) being electrically connected to a first end (18) of the resistive layer (10), the earthing conductor track (14) being electrically connected to a second end (20) of the resistive layer which is opposite from the first end (18), and the resistive layer (10) being bounded, between the first end (18) and the second end (20), by lateral faces (26) in a direction perpendicular to a direction of propagation (22) of the RF energy in the resistive layer (10) and perpendicular to a normal (24) to the planar layer structure, the resistive layer (10) having at least one incision, which at least partly constricts the cross-section of

Abstract: To provide a glazed metal film resistor device excellent in TCR characteristics with using an economical base body containing glass by reducing affection to TCR characteristics caused by glass contained in the base body. The resistor device comprises base body 11 containing glass, first protective film 12, which does not contain glass, formed on a surface of base body 11, and thick film resistor 13 formed on first protective film 12. By forming first protective film 12 on a surface of base body 11 containing glass and insulating base body 11 containing glass against thick film resistor 13 of ruthenium oxide as primary component, affection of glass contained in base body 11 to thick film resistor 13 of ruthenium oxide can be suppressed, and change of TCR value from original value of thick film resistor itself can be suppressed.

Abstract: A coated wire is solderable with soft solder while maintaining separate phases of the core and the coating. A 100 ?m to 400 ?m thick nickel wire may be coated galvanically with silver. For a film resistor with coated wires as connection wires, including a platinum measurement resistor on an electrically insulating substrate and connection wires connected to the measurement resistor, the connection wires have a coated nickel core. The coating may be made of silver or glass or ceramic or a mixture of these materials, or on its outside may be made of glass or ceramic or a mixture of these materials. For producing film resistors a thin metal or glass component is deposited on a connection wire connected to a track conductor arranged on an electrically insulating substrate, and a thick glass paste is deposited and fired on this metal or glass component. For mass production of film, several film resistors encased together in glass may be partitioned by fracturing.

Abstract: A metal resistor and resistor material are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu) infused with at least one of silicon (Si), nitrogen (N2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W), and aluminum infused with at least one of silicon (Si), nitrogen (N2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W). The resistor material may include one of: copper (Cu) infused with at least one of silicon (Si), nitrogen (2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W), and aluminum infused with at least one of silicon (Si), nitrogen (N2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W).

Abstract: A resistor R1 formed by forming a first resistor layer 5a of 20 nm thickness including a tantalum nitride film at a concentration of nitrogen of less than 30 at % and a second resistor layer of 5 nm thickness including a tantalum nitride film at a concentration of nitrogen of 30 at % or more successively by a reactive DC sputtering method using tantalum as a sputtering target material and using a gas mixture of argon and nitrogen as a sputtering gas, and then fabricating the first and the second resistor layers, in which the resistance change ratio of the resistor can be suppressed to less than 1% even when a thermal load is applied in the interconnection step, by the provision of the upper region at a concentration of nitrogen of 30 at % or more.

Abstract: An apertured fixed chip resistor and method for fabricating the same are disclosed according to the present invention, wherein a bonding layer is applied to accordingly bond together a substrate and a metallic sheet structure that has central aperture, and then a passivation layer is applied to partially cover the exposed surface of the metallic sheet structure and to divide the surface of the metallic sheet structure into a central covered region separating two uncovered regions, wherein the uncovered regions are provided to serve as electrode zones, thereby eliminating unnecessary current transmission impedance as in prior art as well as efficiently and stably reducing the temperature coefficient of resistance.

Abstract: The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.

Abstract: A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) layer. The combination of the Ti layer and the TiN layer mitigates resistance associated with the electrical interface layers.

Abstract: A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ? of at least 0.02 ?-cm (typically 0.02-1.0 ?-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 k?/? may also be obtained. The resulting thin film is preferably at least 200 ? thick, to reduce surface scattering conduction currents.

Abstract: A chip resistor includes a resistor element in the form of a chip, and at least two electrodes formed on the resistor element. The resistor element includes an upper surface, a lower surface, and two end surfaces extending between the upper and the lower surfaces and spaced from each other. The two electrodes are provided on the lower surface of the resistor element. Each of the end surfaces of the resistor element is formed with a conductor film integrally connected to a corresponding one of the electrodes. The conductor film is made of copper, for example, and is higher in solder-wettability than the resistor element.

Abstract: A thick film heater is shown wherein the thick film resistive circuit, as the heating element, is applied directly to a target object to be heated for very low temperature applications. The thick film used is polymer-based (preferably epoxy). The thick film resistive circuit is applied using conventional means. However, it is cured at higher temperatures and longer cycles than conventional thick film circuits, and preferably in multiple stages.

Abstract: The present invention provides a window assembly having a transparent panel and a conductive heater grid formed integrally with the transparent panel. The conductive heater grid has a first group of grid lines and a second group of grid lines, with opposing ends of each group being connected to first and second busbars. Grid lines of the second group are spaced between adjacent grid lines of the first group, with the height of the grid lines themselves in the second group being less than the height of the grid lines in the first group.

Abstract: A chip resistor is provided which includes a resistor film 5 formed between a pair of terminal electrodes 2 and 3 on an upper surface of an insulating substrate 2. The resistor film is formed with two inward grooves 7, 8 and two trimming grooves 9, 10 which are alternately provided for causing the current path in the resistor film to have a winding shape. The two inward grooves 7 and 8 are provided approximately at the midpoint between one end edge 5a and the other end edge 5b of the resistor film 5. The trimming groove 9 is provided between the inward groove 8 and the end edge 5a of the resistor film, whereas the other trimming groove 10 is provided between the inward groove 7 and the end edge 5b of the resistor film, whereby the time required for the trimming adjustment to adjust the resistance to a predetermined value is shortened, and the yield rate is reduced to reduce the cost.

Abstract: A device for generating infrared radiation includes at least one heating element and at least one radiating element for irradiating the infrared radiation. The heating element is a micromechanical, two-dimensional heater structure. The heating element may be applied on the radiating element using hybrid technology such that the radiation element has at least one side facing the heating element and at least one side facing away. The radiating element may be ceramic substrate.

Abstract: An adjustable resistor embedded in a multi-layered substrate and method for forming the same. The adjustable resistor comprises: a planar resistor, having a plurality of terminals; and a plurality of connecting lines connected to the planar resistor, each of the connecting lines being drawn from each of the terminals of the planar resistor so as to form a resistor network, wherein the connecting lines are selectively broken by a process for drilling the substrate to form a number of combinations of opened connecting lines such that the resistance value of the adjustable resistor is varied and thus the resistance value of the adjustable resistor can be precisely adjusted.

Abstract: A conductive substrate with a resistance layer comprising a substantially flat high conductivity substrate roughening treated on its surface by a resistance component and provided with a resistance layer by the resistance component so as to enable the interface between the high conductivity substrate and resistance component layer to be substantially flattened, enable acquisition of a thin film resistance layer with a stable resistance after dissolving away the high conductivity substrate, and able to maintain the peel strength with the insulating support, and a resistance board using the same.

Abstract: A method for producing a uniformly heated electric heating cloth comprising the steps of forming heating threads by dissolving a thermoplastic polymer in an organic solvent, adding an industrial carbon which is produced from acetylene to form a first mixture, grinding the mixture of industrial carbon and thermoplastic polymer, adding a colloidal graphite to form a second mixture, grinding the second mixture, coating threads with the second mixture in a spinneret, heating the coated threads to remove the organic solvent; and interweaving the coated heating threads with non-conducting threads in a perpendicular direction.

Abstract: An electrical resistor structure overlies a substrate and comprises a composite resistor having a first resistor of relatively low resistance and a second resistor of relatively high resistance overlying the first resistor. First and second electrodes make contact with the composite resistor at spaced locations, and a bond pad overlies the second resistor at a position between the electrodes. A metallized fiber is soldered a to a metal bond pad by providing a stacked resistor structure beneath the bond pad, disposing a solder preform over the bond pad, disposing the metallized fiber over the bond pad, and flowing a current through the stacked resistor structure. The stacked resistor structure, when subjected to a current flowing generally along a first axis, is characterized by a temperature profile that has first and second peaks on either side of the bond pad.

Abstract: A resistive heater having a doped ceramic heating element embedded either partially or completely within a matrix of undoped ceramic material. The ceramic may be silicon carbide, and the dopant may be nitrogen. Many of the advantages of the present heater stern from the fact that the materials used for the heating elements and the matrix material surrounding those elements have substantially the same coefficient of thermal expansion. In one embodiment, the heater is a monolithic plate that is compact, strong, robust, and low in thermal mass, allowing it to respond quickly to power input variations. The resistive heater may be used in many of the reactors and processing chambers used to fabricate integrated circuits, such as those that deposit epitaxial films, and carry out rapid thermal processing.

Abstract: The present invention relates to a load sensor and provides a highly accurate load sensor with multi-layered wiring at low costs. It provides crystallized glass and non-crystalline glass which are best for a load sensor, and combines these to form multi-layered wiring, and further, makes a glass layer of composite type as needed, and reduces uneven printing in printing multiple layers with use of hardening type paste.

Abstract: The organic NTC composition according to the present invention is a mixture of a conjugated organic semiconductor polymer and a thermoplastic resin or thermosetting resin. For example, the mixed amount of the thermoplastic resin or thermosetting resin is preferably equal to or lower than two times the amount of the conjugated organic semiconductor polymer, and a conjugated organic semiconductor polymer selected from solvent-soluble polyaniline, polythiophene, polypyrrole and their derivatives is preferably used. This organic NTC composition makes it possible to provide an organic NTC device without using any expensive material and facilitates easy production at low temperatures.

Abstract: A passive, high-temperature-resistant resistor element for measuring temperature is provided, the resistor element having an essentially interior insulating layer and two exterior conducting layers of a ceramic composite structure; the conducting layers being connected to one another at the tip of the resistor element; and the ceramic composite structure including trisilicon tetranitride, a metal silicide, and yttrium oxide or trisilicon tetranitride, a metal silicide, and a matrix phase of SixOyCzNw, where x signifies 1–2, y signifies 0–2, and w signifies 0–2. A combination element of this resistor element and a sheathed type glow plug, for example, is also provided.

Abstract: An impedance network configuration in the form of a snake-like or ladder structure is provided. The ladder configuration enables the provision of tabs extending outwardly from the normal conducting path, the tabs providing a location for the provision of contact layers. Using such a configuration the contribution of the contact impedance can be minimized and also programming of the configuration may be effected.

Abstract: Methods for forming electrically conductive heated dielectric panels are provided. The panels are utilized for warming objects and/or insuring unobstructed viewing through the panels by removing moisture. The methods include depositing electrically conductive metal bus bars onto the dielectric panel, onto which panel a conductive coating has previously been disposed. The conductive metal bus bars are deposited onto the coated dielectric panel through the use of a circularly rotating or an inline heating head and mask apparatus, in combination with an oxyacetylene or a plasma device. A metallic tab, which extends from the panel peripheral edge, is brought into electrical contact with each conductive metal bus bar for external electrical connectivity.