Abstract: An exhaust air dryer with a drum for drying damp laundry with warm process air, a heating device for the process air into which leads a first process air channel upstream of the drum, into which a supply air channel and a first end of a circulating air channel discharge, a second process air channel downstream of the drum, into which an exhaust air channel and a second end of the circulating air channel discharge, and a fan including an impeller with a blade configuration, the impeller having blades which are straight and/or curved backwards in the direction of movement toward the drum.

Abstract: A method for roasting a load of plant biomass, includes the following stages: generation of a treatment gas stream by a thermal generating apparatus, the treatment gas stream being an inert gas consisting essentially of CO2; generation of a bed of material at high temperature, called the thermal base; treatment of the load of biomass with the treatment gas stream, the treatment gas stream being laden with gaseous components including a water steam and volatile organic compounds originating from the load of biomass during the treatment; and recycling of at least a portion of the water steam by passing at least a portion of the laden gas stream through the thermal base.

Abstract: An apparatus and method for quickly and effectively drying ground surfaces or thawing and melting frozen outdoor locations uses a directed air current heated by combustion in the air flow. The invention consists of a means for blowing air upon the surface, a means for heating the air and a means for moving the apparatus with respect to the surface to provide flexibility and control in the degree of drying/heating performed. The apparatus and method may be applied to a variety of surfaces including earthen (dirt) surfaces, concrete and asphalt. The apparatus and method may also be directed to thawing or melting frozen installations such as external piping, train track switches, and other electrical and mechanical targets. The embodiments of the invention are mobile and allow the application of heated air to disparate locations and targets.

Abstract: Phospholipid based powders for drug delivery applications are disclosed. The powders comprise a polyvalent cation in an amount effective to increase the gel-to-liquid crystal transition temperature of the particle compared to particles without the polyvalent cation. The powders are hollow and porous and are preferably administered via inhalation.

Abstract: A dehumidification plant for granular material provided with a compressed air source, control means for controlling the flow rate of the compressed air fed by the source, a heating chamber of compressed air which is in communication with the flow rate control means, a container of granular material to be dehumidified, diffuser means disposed inside the container, temperature sensor means arranged to detect the temperature of air leaving the container, and a programmable control unit. The dehumidification plant utilizes a compressed-air dehumidifying group located downstream of flow rate control means, and a flow rate adjusting group for controlling the dehumidified air coming from the dehumidifying group located upstream of the heating chamber.

Abstract: Systems and related methods of using heat to process an agricultural product are provided. The system comprises a circulating fluidized bed combustor, a first conduit system, and an indirect heating dryer. The circulating fluidized bed combustor comprises a combustion chamber configured to combust a fuel to generate a mixture comprising hot gases and particulate matter, and a separation chamber configured to separate at least a portion of the particulate matter from the mixture to form a flow of cleaned hot gas. The first conduit system is configured to conduct the cleaned hot gas to a heat exchanger. The indirect heating dryer is in heat conductive contact with the heat exchanger and configured to use the heat from the cleaned hot gas to indirectly dry the agricultural product without contacting the agricultural product with the cleaned hot gas.

Abstract: A method and apparatus are provided for reducing the VOC, CO, and, alternatively, the NOx content of dryer offgas that is discharged into the atmosphere from a moist organic product drying process using thermal oxidizing apparatus that includes a burner, furnace, mixing chamber, thermal oxidizer, tempering chamber, and an indirect gas-to-gas heat exchanger. The dryer offgas is separated into two portions, with a larger portion being preheated by indirect heat exchange with the hot gaseous output from the thermal oxidizer. The non-preheated portion is directed to the burner in the function of flue gas recycle for NOx control. The preheated portion is separated into two portions, with one portion being directed to the furnace/mixing chamber of the thermal oxidizing apparatus. The other portion of the preheated offgas is recycled to the hot gas inlet of the dryer and serves the function of dryer heat transfer media.

Abstract: The method of removing moisture from a material contained within a dryer (3) comprises heating a first stream of gas (A3); passing the heated stream of gas through a dryer (3) to extract moisture from the material to be dried; returning a first portion (E3) of the used gas from an outlet of the dryer (3) to the heater (2), re-heating the second stream of gas (E3) in the heater (2); and passing the heated second stream (B3) back into the dryer (3), wherein the first stream of gas (A3) is atmospheric air from which at least a proportion of the nitrogen present therein has been removed, to thereby increase the percentage by volume of oxygen in the first stream of gas (A3).

Abstract: Methods and systems are provided for handling an item in a vacuum-based handling system for semiconductor manufacturing. The methods include providing a heater or dryer for the load lock of the handling system that dries a semiconductor wafer during the pumping down of the load lock.

Abstract: Contaminant laden gas streams from wood product dryer operations, and other sources, are purified. The gas stream first is saturated with moisture by contacting the gas stream with fine liquid droplets which entrain particulates. The gas stream then is subjected to a plurality of separate particulate and liquid droplet removal steps before a droplet-free gas stream having substantially reduced particulate contaminant levels is passed to a burner for removal of volatile organic compounds from the gas stream.

Abstract: The substrate drying apparatus has a substrate processing vessel 1, a substrate supporting section for supporting plural substrates 2 in a standing condition and lined up condition in the interior of the substrate processing vessel 1, fluid reservoir section 3 for drying provided at an upward predetermined position of the substrate processing vessel 1, a first inert gas supplying section 4 for blowing inert gas against the drying fluid 6 pooled in the fluid reservoir section 3 for drying so as to generate droplet of the drying fluid, and for guiding the droplet towards the center of the substrate processing vessel 1, and a second inert gas supplying section 5 for supplying inert gas vertically and downwardly so as to supply the generated droplet of the drying fluid towards the substrates 2, consequently safety is improved without providing special safety device, and sufficient amount of drying fluid is supplied to the dipping boundary face of the substrate and the cleaning liquid.

Abstract: An apparatus of drying semiconductor substrate using azeotrope effect and a drying method using the apparatus are provided. The apparatus includes a bath for storing a fluid, a chamber located above the bath and an apparatus for supplying an organic solvent onto the surface of the fluid in the bath for forming an azeotrope layer at the surface of the fluid and for forming an organic solvent layer over the azeotrope layer. The organic solvent layer and the atmosphere thereon are heated by a heater. The apparatus may further include a drying gas conduit for introducing a drying gas into the chamber.

Abstract: A method for drying washed objects which is capable of drying the objects in a reduced period of time, effectively preventing contamination of the objects, and preventing energy loss. The apparatus for carrying on the method of drying washed objects includes a drying tank having an opening on the upper portion thereof so that the washed objects can be placed or taken out from above, and a rinsing tank formed integrally with the drying tank, and is capable of being sealed hermetically by closing an openable and closable lid. The drying tank includes a mist-straightening vane for supplying organic solvent mist at normal temperatures to the washed objects, so that the washed objects are dried by organic solvent mist emitted from the mist-straightening vane.

Abstract: A substrate treating apparatus for performing etching treatment of a plurality of substrates by immersing the substrates collectively in a heated phosphoric acid solution. When the substrates are fetched from a container, a substrate counting mechanism and a substrate counter count the substrates to be treated collectively. A processing time determining unit determines a processing time according to a count of the substrates, by referring to a relationship between count of substrates and processing time stored in a storage unit. Since the processing time is adjusted according to the number of substrates in a lot to be treated collectively, variations in the amount of etching are suppressed even when the number of substrates differs from one lot to another.

Abstract: A delivery system and method for vaporizing and delivery of vaporized solid and liquid precursor materials at sub-atmospheric pressures between a heatable vaporization vessel and a processing tool. The system includes a pressure regulator internally positioned within the vaporization vessel and in fluid communication with a downstream mass flow controller to maintain a consistent flow of vaporized source material. The system further comprises introducing a carrier/diluent gas for diluting the vaporized source material before entry into the processing tool. A venturi is positioned directly upstream of the processing tool and provides for mixing of the carrier gas with the vaporized source material while providing the negative pressure required to open the gas pressure regulator within the vaporization vessel.

Abstract: Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: A semiconductor wafer drying apparatus is provided. In one embodiment, this apparatus includes a bath which can contain much deionized water so that semiconductor wafers soak in the deionized water; a chamber providing a space where vapor flows over the bath; a vapor supply line supplying vapor to the internal space of the chamber; an exhaust line discharging vapor contained in the chamber; a deionized water exhaust line discharging deionized water in the bath; a semiconductor wafer holder supporting the semiconductor wafer in the bath; and pitch guides placed at left and right sides of the semiconductor wafer, movable to a first position and a second position in a vertical direction, wherein the pitch guides are separated from the semiconductor wafer at the first position and contact the semiconductor wafer at the second position thus preventing the movement of the semiconductor wafer.

Abstract: A substrate drying system for drying substrates after the substrates are washed typically using deionized water. The substrate drying system comprises a substrate cleaning tank in which the substrates are washed. A dry pump is provided in fluid communication with the substrate cleaning tank. A container which contains a supply of a liquid drying fluid, typically isopropyl alcohol (IPA), is further provided in fluid communication with the substrate cleaning tank. In application, the dry pump induces a reduced pressure inside the substrate cleaning tank and the drying fluid container. This reduces the vapor pressure, and thus, the boiling point of the drying fluid, such that the drying fluid is vaporized and remains in a vaporized state throughout transit to the substrate cleaning tank and during drying of the substrate.

Abstract: An apparatus and corresponding method for heating a wafer during processing. The apparatus includes a process chamber enclosing a processing tube defining a processing area. The processing tube includes a first wall and a second wall which define a hollow cavity or passageway therebetween. The second wall includes a plurality of holes or outlets formed thereon which allow environmental communication between the hollow cavity and the processing area. The apparatus also includes a plurality of resistive heating elements positioned adjacent to the processing tube. A thermal energy output from the resistive heating elements is configured to heat a gas flowing through the hollow cavity. The gas flowing through the hollow cavity exits the hollow cavity through the plurality of holes and convectively change the temperature of the wafer disposed in the processing tube.

Abstract: A method for vacuum drying of a substrate which can eliminate not only the moisture adhered to the substrate surface but also the moisture impregnated inside of the films which form the devices in a shot time without deforming nor deteriorating the devices formed on the substrate in the drying. The method for vacuum drying of a substrate, concerning a method for drying a substrate by processing the substrate surface in a desired condition, cleaning the processed substrate with cleaning liquid, and drying the cleaned substrate, comprises the steps of heating the substrate surface to a predetermined temperature to vaporize the moisture of the surface as vapor and thereby detach the moisture from the substrate to outside, and vacuuming the detached vapor at a predetermined vacuum pressure to eliminate the moisture from the wafer.

Abstract: Drying semiconductor wafers or substrates by introducing an polar organic compound in liquid form into or onto means for enhancing evaporation within a process chamber and allowing the liquid to evaporate and form a drying vapor within the process chamber.

Abstract: An article and method for producing extremely small pore inorganic membranes. The method enables reduction of the pore size of a porous inorganic membrane, such as metal oxides, metal carbides, metal nitrides and cermets. Mean pore diameters of below about 10 Å. Can readily and efficiently be achieved. After the conventional formation of an inorganic membrane, the pore size of the membrane is progressively reduced in a controlled manner to deposit one or more layers of an inorganic compound on the pore walls. This is done by exposing the membrane to the vapor of an inorganic precursor compound. The compound reacts with hydroxyl groups and or absorbed water molecules on the surface of the membrane and is thus bonded to the surface. Water vapor, oxygen, or vapors containing one or more oxygen ligands such as an alcohol are used to hydrolyze the deposited material to the inorganic membrane.

Abstract: A wafer dryer system which is suitable for drying rinse water from substrates in the event of a system malfunction or failure during or after rinsing of the substrates. The wafer dryer system typically includes a pair of drying chambers, each of which is fitted with at least one nitrogen gas inlet, at least one IPA gas inlet and an exhaust opening. A wafer boat which holds multiple wet wafers from an interrupted rinsing process typically in a wet bench system is placed in one of the chambers, after which the chamber is filled with hot nitrogen gas and mixed IPA gas to dry the wafers in the wafer boat. Upon resumption of operation of the wet bench system from which the wafers were taken or upon availability of a second wet bench system, the dried wafers are removed from the chamber for continued rinsing, as necessary.

Abstract: A method is described for enhancing mass and heat transport of fluids in a fine pore structure through an appropriate modulation of the fluid pressure. For example, in an air drying process for a porous material that contains liquid, the air pressure is modulated throughout the volume of the drying chamber. Alternatively, the fluid pressure is modulated in a process stream. As an example, this method can be used for rapid drying of any open porous substances ranging from small pored materials such as aerogels and xerogels, to larger pored substances or articles such as industrial articles, agricultural articles (e.g., densely stacked vegetables, coffee beans, hops and other grains), paper-based products, thin films, pharmaceuticals, cloth, and clothing.

Abstract: A semiconductor wafer drying apparatus is provided. In one embodiment, this apparatus includes a bath which can contain much deionized water so that semiconductor wafers soak in the deionized water; a chamber providing a space where vapor flows over the bath; a vapor supply line supplying vapor to the internal space of the chamber; an exhaust line discharging vapor contained in the chamber; a deionized water exhaust line discharging deionized water in the bath; a semiconductor wafer holder supporting the semiconductor wafer in the bath; and pitch guides placed at left and right sides of the semiconductor wafer, movable to a first position and a second position in a vertical direction, wherein the pitch guides are separated from the semiconductor wafer at the first position and contact the semiconductor wafer at the second position thus preventing the movement of the semiconductor wafer.

Abstract: A processor and method for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.

Abstract: An apparatus of drying semiconductor substrate using azeotrope effect and a drying method using the apparatus are provided. The apparatus includes a bath for storing a fluid, a chamber located above the bath and an apparatus for supplying an organic solvent onto the surface of the fluid in the bath for forming an azeotrope layer at the surface of the fluid and for forming an organic solvent layer over the azeotrope layer. The organic solvent layer and the atmosphere thereon are heated by a heater. The apparatus may further include a drying gas conduit for introducing a drying gas into the chamber.

Abstract: A device for the treatment of substrates has a fluid container and two substrate transport devices positionable above the fluid container. Each substrate transport device is a hood for receiving multiple substrates. Each substrate transport device has at least one substrate support device having a first position for locking the substrates and a second position for releasing the substrates. The substrate transport devices are rigidly connected to one another and linearly movable for alternatingly positioning one of the substrate transport devices above the fluid container.

Abstract: A method for calibrating a semiconductor wafer drying apparatus including a heater and a vessel containing a solvent and capable of receiving semiconductor wafers comprises selecting a test heater temperature and a test processing time. A first set of wafers is placed in the vessel and the heater is operated at the test heater temperature so that a solvent vapor cloud is created in the vessel. The first set of wafers is monitored for substantial envelopment by the vapor cloud during the test processing time. Based on the monitoring step, at least one of the test heater temperature and the test processing time is adjusted to establish at least one operating parameter of an operating heater temperature parameter and an operating processing time parameter for processing successive sets of wafers so as to promote substantial vapor cloud envelopment of each set of wafers dried in the drying apparatus.

Abstract: An apparatus and a method for preventing solvent droplets from falling on wafers during a solvent drying process of a semiconductor wafer. The apparatus is constructed by a body having a cavity therein for holding a wafer, means for introducing a solvent vapor in the cavity, a plurality of condenser coils on an inside wall of the cavity, and a plurality of condensing plates attached to the plurality of condenser coils on a surface facing the wafer for condensing solvent vapor and flowing condensed solvent into a reservoir thus preventing solvent droplets from falling on the wafer surface.

Abstract: A cleaning method is provided for cleaning a semiconductor wafer. In this method, after removing adhering substances from the wafer by using a chemical liquid of organic amine type, there is carried out a pure-water cleaning capable of prevention of electrostatic destruction and alkaline corrosion on the wafer. In detail, it is executed to make a processing chamber have an atmosphere of carbon dioxide and subsequently introduce steam into the chamber to dissolve CO2-gas into the steam. Next, spray the pure water to the wafer. Then, the steam in which CO2-gas is dissolved dissolves in the pure water, so that the pure wafer becomes weak acid, accomplishing the reduction of resistivity of the pure water. Additionally, alkaline substances is neutralized by carbonated water to prevent an alkaline corrosion on a wiring layer on the wafer's surface.

Abstract: A method for vacuum drying of a substrate which can eliminate not only the moisture adhered to the substrate surface but also the moisture impregnated inside of the films which form the devices in a shot time without deforming nor deteriorating the devices formed on the substrate in the drying. The method for vacuum drying of a substrate, concerning a method for drying a substrate by processing the substrate surface in a desired condition, cleaning the processed substrate with cleaning liquid, and drying the cleaned substrate, comprises the steps of heating the substrate surface to a predetermined temperature to vaporize the moisture of the surface as vapor and thereby detach the moisture from the substrate to outside, and vacuuming the detached vapor at a predetermined vacuum pressure to eliminate the moisture from the wafer.

Abstract: A processor for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.

Abstract: An apparatus and method for reducing particles in reactors. The apparatus includes an enclosure with a wafer handling chamber connected by an isolation gate valve to a processing chamber. Pipes deliver purge gas into the wafer handling chamber to eliminate particles from the enclosure. A pilot operated back pressure regulator regulates the delivery and removal of the purge gas. The apparatus actuates the isolation gate valve in a controlled rate to reduce disturbances from the purge gas entering into the enclosure. A Bernoulli wand is provided for lifting and holding a single semiconductor wafer. A dome loaded regulator actuated by a pilot gas is used to control the ramp rates of gas to the Bernoulli wand. The ramping rates of the Bernoulli wand gas can be controlled by restrictions and check valves in the pilot gas line. The apparatus also utilizes ionizers in the purge gas lines entering the wafer handling chamber and load locks.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: A method and system for cleaning a metal article. The system is used to employ a method that comprises placing the article in a means defining a chamber; subjecting the article to a gaseous atmosphere in the means defining a chamber, where the gaseous atmosphere consisting essentially of carbon, hydrogen, and fluorine; and subjecting the article to the gaseous atmosphere at a temperature in a range from about 815° C. to about 1100° C. to clean the article.

Abstract: A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.

Abstract: An emptying unit for recovering bottom residue, particularly in drying filters, drying units and the like, comprising, inside a container for treating and containing dried product, fluid introducing elements for moving the bottom residue of the dried product. A discharge port being also provided which is controlled by a discharge valve interposed on a pneumatic circuit suitable to produce a circulation of fluid in output from the discharge port.

Abstract: The method is used for drying solid insulation for an electrical appliance by means of the condensation heat emitted from the vapor of a solvent. When the solvent vapor condenses on the solid insulation, a vapor mixture is formed which contains solvent and water. This vapor mixture is supplied at a controlled flow rate from an evacuated autoclave to a condenser which is arranged outside the autoclave, and is condensed.

Abstract: The present invention provides a method and an apparatus for drying semiconductor wafers by using an IPA drying apparatus. The present invention uses a vapor generator to generate an IPA vapor. The IPA vapor is generated and saved in a closed surrounding and then transferred in a porous hollow plate in the dryer tank by using a quartz pipe. The IPA vapor is diffused evenly from the porous hollow plate. Furthermore, the present invention increases the safety of the process and can easily control the input amount of the IPA vapor.

Abstract: A transportable skid for drying and testing generator stator windings includes a platform supporting a compressor adapted to supply compressed air to the stator winding; a dryer arranged to receive and dry compressed air from the compressor; a buffer tank arranged to receive a relatively small portion of compressed air from the compressor after passing through the dryer; and a receiving tank arranged to receive compressed air from the buffer tank and the compressor after passing through the dryer.

Abstract: Drying semiconductor wafers or substrates by introducing an polar organic compound in liquid form into or onto means for enhancing evaporation within a process chamber and allowing the liquid to evaporate and form a drying vapor within the process chamber.

Abstract: Disclosed is a dry cleaning apparatus and method using cluster for cleaning a surface of a specimen such as semiconductor wafer. The cleaning method first forms a neutral cluster no having polarity by passing a cleaning gas such as argon, nitrogen, or carbon dioxide gas through a sand glass-shaped nozzle. The formed neutral cluster is injected at an acute angle with respect to a surface of the specimen, thereby removing particles or organic remnants attached on the surface of the specimen without damaging the surface of the specimen.

Abstract: Liquid is removed from disks by apparatus and methods for drying a disk that has been wet in a liquid bath. The disk and the bath are separated at a controlled rate to form a monolayer of liquid on the disk as the disk is positioned in a gas-filled volume. The separation may be by moving the disk out of the liquid bath, and the controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the disk when the liquid bath and the disk are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the disk in the gas-filled volume. Hot gas directed into the volume and across the disk and out of the volume continuously transfers thermal energy to the disk. The directing of the gas out of the volume is independent of the separation of the bath and the disk.

Abstract: A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.

Abstract: A method of and an apparatus for drying a wafer using the Marangoni effect quickly forms an isopropyl alcohol layer on a cleaning liquid in which the wafer is submerged. The isopropyl alcohol is first heated and then supplied in a fluid state onto the cleaning liquid. The isopropyl alcohol liquid thus diffuses rapidly to form the isopropyl alcohol layer. The wafer is thoroughly dried by removing it from the cleaning liquid through the isopropyl alcohol while only supplying more of the heated nitrogen gas into the ambient above the cleaning liquid.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: The invention is a drying system and a method for its use, the drying system having a container containing a product to be dried and a dryer. The dryer includes an inlet for providing the drying air, a drying air pathway, and a furnace for heating the drying air. The drying air flows through a supply route to the container, where the drying air dries the product and is converted into a return air. The return air flows through a return route back to the dryer. The return air flows through a return air pathway and a heat exchanger which intersects the return air pathway and the drying air pathway. The heat exchanger transfers heat from the return air to the drying air. The return air is exhausted through an outlet. In a preferred embodiment, the container is a tobacco barn and the product is tobacco.

Abstract: A method for drying wafers after a wet bench process is disclosed. In the method, a wafer is first immersed in a volume of DI water held in a container. A mixture of alcohol vapor/inert gas is then flown into the upper portion of the container that is not filled with the volume of DI water at a flow rate of less than 20 l/min. The wafer is then withdrawn from the DI water into the upper portion of the container filled with the alcohol vapor/inert gas mixture and thereby driving DI water molecules off the surface of the wafer without leaving organic residue on the wafer surface.