Abstract: A display device includes: a display substrate including a display area including a plurality of pixel areas and a non-display area at edge sides of the display area; and an aligning agent-accommodating structure including a capping layer disposed in the non-display area to be opened inward of the display substrate. The aligning agent-accommodating structure accommodates an aligning agent applied to the display area.

Abstract: A display device includes: first and second drain electrodes; an organic insulating film; an inorganic insulating film formed on the organic insulating film; and first and second pixel electrodes formed on the inorganic insulating film. The organic insulating film includes an organic insulating film opening spanning the first drain electrode and the second drain electrode. The inorganic insulating film covering the organic insulating film includes first and second inorganic insulating film openings. The first pixel electrode is connected to the first drain electrode via the first inorganic insulating film opening. The second pixel electrode is connected to the second drain electrode via the second inorganic insulating film opening.

Abstract: According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.

Abstract: A liquid crystal display device comprising a TFT substrate having pixels each including a common electrode formed on an organic passivation film, an interlayer insulating film formed so as to cover the common electrode, a pixel electrode having a slit and formed on the interlayer insulating film, a through-hole formed in the organic passivation film and the interlayer insulating film, and a source electrode electrically conducted to the pixel electrode via the through-hole. A taper angle at a depth of D/2 of the through-hole is equal to or more than 50 degrees. The pixel electrode covers part of a side wall of the through-hole but does not cover the remaining part of the side wall of the through-hole. This configuration facilitates the alignment film material to flow into the through-hole, thereby solving a thickness unevenness of the alignment film in vicinity of the through-hole.

Abstract: A display panel and manufacturing method thereof, and a display device are disclosed. The display panel includes an array substrate and a counter substrate. The array substrate includes a main region and a peripheral region, the main region coincides with an orthographical projection of the counter substrate on the array substrate, and at least one glue dispensing zone is arranged in the peripheral region or the main region. Conductive adhesive is provided in the glue dispensing zone, and is electrically connected to a grounded unit; an electrostatic conducting structure is provided on the counter substrate, and the conductive adhesive is electrically connected to the electrostatic conducting structure.

Abstract: The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52?) with ion doping process, and the oxide conductor layer (52?) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

Abstract: In a liquid crystal display device, a common electrode is formed on an organic passivation film, an interlayer insulating film is formed on the common electrode, a pixel electrode with a slit is formed on the interlayer insulating film, and a through hole is formed in the organic passivation film and the interlayer insulating film, so that the pixel electrode is connected to a source electrode of a TFT through the through hole. Further, the taper angle around the upper base of the through hole is smaller than the taper angle around the lower base. Thus, the alignment film material can easily flow into the through hole when the diameter of the through hole is reduced to connect the pixel and source electrodes, preventing display defects such as uneven brightness due to the absence of the alignment film or due to the alignment film irregularity around the through hole.

Abstract: A liquid crystal display device includes first and second substrates facing each other; a liquid crystal layer between the first and second substrates; a thin-film transistor (“TFT”) on the first substrate and including a semiconductor layer and a gate, source and drain electrodes; an organic layer on the TFT and defining a contact hole therein which exposes a portion of the drain electrode; a conductive layer on the organic layer and contacting the exposed portion of the drain electrode at the contact hole; a common electrode which is on the organic layer and isolated from the conductive layer; a passivation layer on the conductive layer and the common electrode and defining an opening therein which exposes a portion of the conductive layer; and a pixel electrode on the passivation layer and the conductive layer and contacting the exposed portion of the conductive layer at the opening.

Abstract: A display device, which includes a display region in which a plurality of pixels are arranged, includes a first organic insulating film, a first groove, which exists in a frame shape surrounding the display region to separate the first organic insulating film, a first inorganic partition portion, which is arranged in the first groove, and is made of an inorganic insulating material that exists in a frame shape surrounding the display region, a second organic insulating film formed above the first organic insulating film and the first inorganic partition portion, and a second groove, which exists in a frame shape surrounding the display region to separate the second organic insulating film, and is located inside the first groove in plan view.

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A display includes: a first TFT, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT, including: a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract: Disclosed is a display device, an array substrate and a method for manufacturing the same. The array substrate comprises a first transparent electrode layer, an insulating layer and a second transparent electrode layer disposed sequentially in a transmission direction of light, the second transparent electrode layer including a plurality of strip electrodes spaced apart from each other. At least one of edges of two adjacent strip electrodes facing to each other and a portion of the first transparent electrode layer corresponding to a space formed between the two adjacent strip electrodes is formed with a protruding part protruding in the transmission direction so that a fringe electrical field formed by the edge of each of the strip electrodes and the first transparent electrode layer is shifted towards an edge side of the strip electrode. The present invention may limit an action rang of each of the fringing electrical fields of the each strip electrode and the first transparent electrode effectively.

Abstract: A method of manufacturing an array substrate, a display substrate and a display device are disclosed. The method of manufacturing an array substrate comprises: forming a pattern of an active layer and a pattern of source and drain electrodes on a substrate; forming a pattern of a first transparent electrode and a pattern of a passivation layer through one single patterning process; and processing the substrate on which the pattern of the passivation layer having been formed, such that a material of the passivation layer fills at least partially in a gap in the pattern of the first transparent electrode. Through forming the pattern of the first transparent electrode and the passivation layer by one single patterning process, number of masks used in the manufacturing process of the array substrate is reduced.

Abstract: An organic light-emitting diode display is disclosed. In one aspect, the display includes a substrate and a plurality of pixels formed over the substrate, each pixel including a first region from which light is emitted and a second region through which external light is transmitted. The display also includes a plurality of pixel circuit units each formed in the first region and including at least one thin-film transistor, an inorganic insulating film formed in the second region, a transparent conductive film formed over at least a portion of the inorganic insulating film, and an organic insulating film covering the pixel circuit units and at least a portion of the transparent conductive film. The display further includes a plurality of first electrodes formed over the organic insulating film and in the first regions of the pixels.

Abstract: A first electrode 30 for the touch panel is formed on an outer side of a counter substrate 200, and the protection film 210 is formed over the first electrode 30 to cover it. A defect 211 in the protection film 210 is filled in with another protection film 210 by inkjet coating. The surface of the protection film 210 is rubbed to a rough surface finish. The polarization plate 220 is attached to the rough surface of the protection film 210 via an adhesive material 221. Since the defective region is repaired by the formation of the protection film 210, corrosion of the first electrode (wiring) 30 due to the presence of the adhesive material 221 can be prevented, and since the surface of the second protection film 210 is made rough, a resulting increase in adhering surface area enhances the adhesion for attaching the polarization plate 220.

Abstract: A liquid crystal display includes a first substrate and a second substrate opposed to each other with a liquid crystal layer between the first substrate and the second substrate. The first substrate has a plurality of drain signal lines and a plurality of gate signal lines, and a plurality of pixel regions are defined by the drain signal lines and the gate signal lines. Each of the pixel regions includes a first electrode having a plurality of strip-like portions extending in an extension direction of the drain signal lines, the strip-like portions having at least one bent portion so that extension directions of each two parts of the strip-like portions separated by the at least one bent portion are different from each other, and a second electrode formed between the first substrate and the first electrode, and being overlapped with the strip-like portions in plan view.

Abstract: The present invention realizes a high-definition and high-brightness display device with a high degree of energy efficiency. The above-described object can be realized by a display device including a display panel having a display surface and a backlight, wherein: the display panel has a wavelength conversion layer for each pixel on a surface parallel to the display surface, and has a light scattering layer between the wavelength conversion layers; the wavelength conversion layers have fluorescent materials; the light scattering layers have fine particles; a reflection layer is provided on the wavelength conversion layers on the backlight side; and a reflection layer is provided on the light scattering layers on the display surface side.

Abstract: A display array substrate includes a substrate, a plurality of gate lines and a plurality of data lines disposed on the substrate, and a plurality of gate connecting pads. Each gate connecting pad is disposed at an end of one of the gate lines. The end of each gate line is partly covered by a first insulation layer. The first insulation layer is an anodic oxide layer.

Abstract: A reliability of seal portion of a liquid crystal display device can be improved by the following structure. A liquid crystal display device includes: a TFT substrate which includes a display region and a terminal part, and has an inorganic insulating film formed on an organic passivation film and an alignment film formed over the inorganic insulating film; a counter substrate, the TFT substrate and the counter substrate bonded together by a sealing material formed at a seal part surrounding the display region; and a liquid crystal sealed inside. At the seal part, a transparent conductive oxide film is formed between the inorganic insulating film and the alignment film. The transparent conductive oxide film exists inside an edge of the TFT substrate and hence, the edge of the TFT substrate is free of the transparent conductive oxide film.

Abstract: Disclosed are an array substrate and a display device which belong to the technical field of displays, and solve the technical problem that, in the existing in-cell technology, the manufacturing process of array substrates is too complex. The array substrate comprises a plurality of pixel units each having a thin film transistor, a plurality of common electrodes, and a plurality of address lines. The address lines each are formed by connecting a first metal wire and a second metal wire, the first metal wire being located at a same layer as a gate of the thin film transistor, and the second metal wire being located at a same layer as a source and a drain of the thin film transistor.

Abstract: A liquid crystal display device comprising a TFT substrate having pixels each including a common electrode formed on an organic passivation film, an interlayer insulating film formed so as to cover the common electrode, a pixel electrode having a slit and formed on the interlayer insulating film, a through-hole formed in the organic passivation film and the interlayer insulating film, and a source electrode electrically conducted to the pixel electrode via the through-hole. A taper angle at a depth of D/2 of the through-hole is equal to or more than 50 degrees. The pixel electrode covers part of a side wall of the through-hole but does not cover the remaining part of the side wall of the through-hole. This configuration facilitates the alignment film material to flow into the through-hole, thereby solving a thickness unevenness of the alignment film in vicinity of the through-hole.

Abstract: A dual gate oxide semiconductor thin-film transistor (TFT) substrate includes a substrate; a bottom gate positioned on the substrate; a bottom gate isolation layer positioned on the substrate and the bottom gate; a first oxide semiconductor layer positioned on the bottom gate isolation layer above the bottom gate; an oxide conductor layer positioned on the bottom gate isolation layer at one side of the first oxide semiconductor layer; a top gate isolation layer positioned on the first oxide semiconductor layer, the oxide conductor layer, and the bottom gate isolation layer; a top gate positioned on the top gate isolation layer above a middle part of the first oxide semiconductor layer; a source and a drain positioned on the top gate isolation layer at two sides of the top gate; and a passivation layer positioned on the top gate isolation layer, the source, the drain, and the top gate.

Abstract: To provide: an electronic component which comprises a copper electrode on an inorganic material substrate and wherein the adhesion strength between the substrate and the copper electrode is high, thereby achieving improved adhesion of the copper electrode; and a method for manufacturing this electronic component. An electronic component which comprises a copper electrode on an inorganic material substrate and wherein an interface layer containing copper, manganese, silicon and oxygen is provided at the interface between the substrate and the copper electrode, and the interface layer contains crystal grains that are mainly formed of copper and dispersed in the interface layer. A method for manufacturing this electronic component comprises: an interface layer formation step for forming an interface layer on the substrate; and an electrode formation step for forming the copper electrode on the interface layer.

Abstract: In a liquid crystal display device, a common electrode is formed on an organic passivation film, an interlayer insulating film is formed on the common electrode, a pixel electrode with a slit is formed on the interlayer insulating film, and a through hole is formed in the organic passivation film and the interlayer insulating film, so that the pixel electrode is connected to a source electrode of a TFT through the through hole. Further, the taper angle around the upper base of the through hole is smaller than the taper angle around the lower base. Thus, the alignment film material can easily flow into the through hole when the diameter of the through hole is reduced to connect the pixel and source electrodes, preventing display defects such as uneven brightness due to the absence of the alignment film or due to the alignment film irregularity around the through hole.

Abstract: An electrode structure having a corner area and a middle area is disclosed. The electrode structure includes at least two sub-electrodes, where at least one of a) a space between two adjacent sub-electrodes in the corner area is smaller than a space between the two adjacent sub-electrodes in the middle area, and b) at least one sub-electrode has a larger width in the corner area than a width of the sub-electrode in the middle area.

Abstract: A display apparatus comprising gate control lines and a plurality of gate driving units, and further comprising a plurality of compensation units (2), wherein each of the compensation units (2) is connected to output terminals of two gate driving units (1) and connected to one of gate control lines. In the display apparatus, the space occupied by gate drivers is reduced and the product size of the display apparatus is decreased by changing the conventional structure of dual gate driving units for two sides to a new structure of a single gate driving unit for two sides (1) plus a compensation unit (2).

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Abstract: A display device includes a plurality of pixels arranged in a matrix. Each of the plurality of pixels includes a transistor and a pixel electrode arranged above the transistor through a first protective film and a second protective film. Among the plurality of pixels, the pixel electrodes of two pixels adjacent in a column direction are connected to corresponding source electrodes of the two pixels through second and third contact holes respectively. The second and third contact holes are formed in the first protective film within a first contact hole that is formed in the second protective film.

Abstract: A dual gate oxide semiconductor TFT substrate is made by utilizing a halftone mask to implement one photo process, which accomplishes patterning of an oxide semiconductor layer and forms an oxide conductor layer with ion doping process. Patterning of a bottom gate isolation layer and a top gate isolation layer are performed at the same time with one photo process. A first top gate, a first source, a first drain, a second top gate, a second source, and a second drain are formed at the same time with one photo process. Patterning of a flat layer, a passivation layer, and a top gate isolation layer are performed at the same time with one photo process. As such, the number of photo processes applied to manufacture the TFT substrate is reduced to five and the manufacturing process is shortened to thereby raise the production efficiency and lower the production cost.

Abstract: A liquid crystal display device includes: a first substrate; a second substrate spaced apart from the first substrate; and a plurality of liquid crystal molecules disposed between the first and second substrates. The first substrate includes a transparent substrate, an insulator layer formed on a surface of the transparent substrate and formed with a plurality of grooves, and a pixel electrode formed on a surface of the insulator layer and formed with a plurality of electrode slits.

Abstract: A liquid crystal display device includes: a TFT substrate including a TFT, an organic passivation film formed to cover the TFT, and an alignment film; and a counter substrate including a spacer and an alignment film. The TFT substrate and the counter substrate are bonded with a sealing material in a seal portion, with a liquid crystal interposed between the two substrates. A wall-like structure is formed in the seal portion of the counter substrate, in a direction parallel to a side of the counter substrate. A concave portion of the organic passivation film is formed at a position corresponding to the wall-like structure of the TFT substrate, in a direction parallel to the side of the TFT substrate. With this structure, a gap between the wall-like structure and the TFT substrate is increased to facilitate the movement of the sealing material before curing, to form the sealing material uniformly.

Abstract: Embodiments of the present disclosure disclose an array substrate, a liquid crystal display panel and a display device. The array substrate comprises a base substrate and a thin film transistor provided on the base substrate, and the thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode. The array substrate further comprises: a common electrode provided above the thin film transistor, and a first pixel electrode and a second pixel electrode both electrically connected with the drain electrode of the thin film transistor. The first pixel electrode is provided below the common electrode and is insulated from the common electrode, and the second pixel electrode is provided above the common electrode and is insulated from the common electrode.

Abstract: A liquid crystal display, includes: a substrate; a gate line including a gate pad and a data line including a data pad, the gate and data lines being disposed on the substrate; a thin film transistor connected to the gate line and the data line; an organic layer disposed on the thin film transistor; a pixel electrode disposed on the organic layer; a first contact assistant disposed on the gate pad; a second contact assistant disposed on the data pad; a first insulating layer disposed on the pixel electrode; and a common electrode disposed on the first insulating layer, the common electrode overlapping with the pixel electrode. The common electrode includes first cutouts, the first insulating layer includes second cutouts, the plane shapes of the first and second cutouts are substantially the same, and the pixel electrode includes a polycrystalline transparent conductive material.

Abstract: A method for manufacturing a flexible display device by forming a flexible base substrate on a carrier substrate, the flexible base substrate having a display region and a non-display region, forming a display unit comprising a plurality of pixels at the display region, separating the flexible base substrate from the carrier substrate, forming an adhesive layer under the flexible base substrate, forming a flexible carrier film under the adhesive layer, forming a pressed region of the adhesive layer by partially pressing the adhesive layer, and mounting a driving circuit at a portion of the non-display region overlapping the pressed region.

Abstract: Recently, with an increasing demand for narrowing a frame, the seal line width is inclined to get finer, which deteriorates the seal adhesive strength. One or a plurality of grooves are formed in a resin layer that is a foundation of a seal area. A direction of forming a groove (lateral surface) is preferably in a vertical direction to the external stress. In a seal straight portion, a groove is preferably formed not only in a parallel direction to the seal but also in the vertical direction. In a seal corner portion, a groove is preferably formed in a shape curved convexly toward a direction of a display area (active area).

Abstract: A transflective type blue phase liquid crystal display device and a liquid crystal display module of the same are disclosed. The transflective type blue phase liquid crystal display module includes an upper substrate, a lower substrate and blue phase liquid crystal molecules. Pixel electrodes and common electrodes are disposed alternately and disposed at intervals on an upper surface of each solid protrusion structure. Electric fields that are in parallel with a surface of each solid protrusion structure are generated in order to drive the blue phase liquid crystal molecules. Slope inclination angles provided at the upper portion and the lower portion of each solid protrusion structure are different such that optical delay properties at the transmissive region and the reflective region are identical.

Abstract: A TFT array substrate is disclosed. The TFT array substrate includes a substrate, a data line disposed above the substrate, and a gate insulating layer disposed above the substrate, where the gate insulating layer includes a groove. The TFT array substrate also includes a data line disposed within the groove of the gate insulating layer.

Abstract: A first interlayer insulating film is arranged on a gate line and a source line. A first common electrode includes a first sub-common electrode extending in a first direction so as to face the gate line and a first main common electrode extending in a second direction so as to face the source line on the first interlayer insulating film. The first common electrode has a slit extending in the second direction. A second interlayer insulating film covers the first common electrode. A main pixel electrode extends in the second direction on the second interlayer insulating film so as to face the slit. A second common electrode includes a second sub-common electrode extending on the second interlayer insulating film so as to face the first sub-common electrode and a second main common electrode facing the first main common electrode.

Abstract: A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates and at the peripheral area. A patterned planarization layer is disposed on the first substrate, including an opening and two sidewalls, wherein the opening is located between the two sidewalls and corresponding to the peripheral area. A passivation layer is disposed between the seal and the first substrate, and wherein a portion of the seal is disposed between the two sidewalls of the patterned planarization layer.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: An array substrate and a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof. The array substrate comprises a base substrate and a pixel electrode and a TFT formed on the base substrate. The TFT includes an active layer and a source/drain pattern. The source/drain pattern is connected with the active layer. The pixel electrode is connected with the active layer. The array substrate can improve the aperture ratio of pixels and the chargeability of the TFT.

Abstract: An LCD panel, which includes liquid crystal cells, a TFT testing unit, and a gate, source, and drain electrode testing pad, is provided. The TFT testing unit includes three electrode testing wires, each of which has one end connected to a gate, source, or a drain electrode, and the other end connected to a corresponding one of the three electrode testing pads. A manufacture method for the LCD panel is also provided. Electrical measurements of the TFT in the liquid crystal cell is realized.

Abstract: A liquid crystal display includes a first substrate and a second substrate, a lower display electrode provided on the first substrate, an insulating layer provided on the lower display electrode, an upper display electrode provided on the insulating layer and having a mesh pattern including opening portions, a common electrode provided on the second substrate, and a polymer-dispersed liquid crystal layer sandwiched between the first substrate and the second substrate in a state in which the upper display electrode and the common electrode face each other.

Abstract: To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

Abstract: A liquid crystal display (LCD) is provided having a discontinuous electrode. In certain embodiments, different portions (such as finger- or slit-like extensions) of the discontinuous electrode may be at different depths relative to one another and/or may be of different widths relative to one another. Similarly, in other embodiments, the different portions of the discontinuous electrode may be spaced apart in a non-uniform manner.

Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

Abstract: A semiconductor device (100) includes: a first line (8) having a first end portion (8T); a second line (2) being insulated from the first line and having a second end portion (2T); a first electrically-conductive portion (9) provided in the neighborhood of the first and second end portions so as to be spaced apart therefrom; a dielectric layer (20) covering them; and a second electrically-conductive portion (38) on the dielectric layer.

Abstract: In a liquid crystal display device, a common electrode is formed on an organic passivation film, an interlayer insulating film is formed on the common electrode, a pixel electrode with a slit is formed on the interlayer insulating film, and a through hole is formed in the organic passivation film and the interlayer insulating film, so that the pixel electrode is connected to a source electrode of a TFT through the through hole. Further, the taper angle around the upper base of the through hole is smaller than the taper angle around the lower base. Thus, the alignment film material can easily flow into the through hole when the diameter of the through hole is reduced to connect the pixel and source electrodes, preventing display defects such as uneven brightness due to the absence of the alignment film or due to the alignment film irregularity around the through hole.

Abstract: The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52?) with ion doping process, and the oxide conductor layer (52?) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

Abstract: The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52?) with ion doping process, and the oxide conductor layer (52?) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.