Abstract: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.

Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

Abstract: A display device may include a first substrate, a second substrate, reflective plates and a transparent electrode. The first substrate and the second substrate may be facing each other. The reflective plates may be on a surface of the first substrate facing the second substrate. The transparent electrode may be disposed on a surface of the second substrate facing the first substrate. Color filters and a polymer-dispersed liquid crystal (PDLC) layer may further be included in the display device. The color filters may be on the reflective plates, and the PDLC may be between the first substrate and the second substrate. The PDLC layer may include a polymer and liquid crystals dispersed in the polymer.

Abstract: A semiconductor structure and an organic electroluminescence device applying the same are provided. A gate insulating layer covers a gate electrode disposed on a substrate. A channel layer has a channel length L along a channel direction and has a first side and a second side opposite to the first side. The channel layer is located on the gate insulating layer over the gate electrode. A source electrode and a drain electrode are located at and electrically connected to the first side and the second side of the channel layer, respectively. A conductive light-shielding pattern layer is disposed on a dielectric layer covering the source electrode, the drain electrode and the channel layer, and is overlapped to a portion of the source electrode and a portion of the channel layer in a vertical projection. The conductive light-shielding pattern layer and the channel layer have an overlapping length d1, and 0.3?d1/L?0.85.

Abstract: By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

Abstract: The present invention provides a color filter substrate in which reduction in display qualities is suppressed even if color mixing is generated when a plurality of differently colored transparent layers are formed by a method using a liquid material, such as an ink jet method, and to provide a liquid crystal display panel and a liquid crystal display device each including the color filter substrate. The color filter substrate of the present invention comprises a plurality of color display units, each of the color display units including four or more differently colored transparent layers, wherein the color filter substrate includes a frame structure which surrounds each of the differently colored transparent layers, and the differently colored transparent layers are arranged such that an average of color difference values for pairs of adjacent differently colored transparent layers becomes minimum.

Abstract: The liquid crystal display panel according to the present invention is a liquid crystal display panel LCD wherein a CF substrate S1 on which color filters are formed and a TFT substrate S2 on which thin film transistor circuits are formed are layered on top of each other with liquid crystal being sealed between the two substrates, characterized in that a black light blocking region BM is formed in a frame portion of the CF substrate S1, and an identification mark M drawn as a negative pattern is provided to a part of the light blocking region, and a metal film MT1 is provided to the TFT substrate S2 in such a location as to block light that transmits through the identification mark.

Abstract: A display apparatus includes a first base substrate, a touch sensing part provided on the first base substrate, an electronic device provided on the first base substrate, a black matrix provided on the first base substrate, a signal line provided on the black matrix to apply a driving signal to the electronic device, a second base substrate facing the first base substrate, and a liquid crystal layer disposed between the first base substrate and the second base substrate.

Abstract: It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

Abstract: An in-plane switching mode liquid crystal display device includes first and second substrates facing each other, a gate line and a data line arranged on the first substrate crossing each other and defining a pixel region, a switching device at a crossing of the gate line and the data line, a common electrode and a pixel electrode alternately disposed in the pixel region, at least one of the common electrode and the pixel electrode including a multi-layer having a conductor layer and a reflectance reducing layer, and a liquid crystal layer formed between the first and second substrates.

Abstract: A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with the first insulating film serving as a dielectric.

Abstract: A pixel structure including a substrate, a color filter layer, a conductive light-shielding layer, a buffer layer, a scan line, a data line, an active device, and a pixel electrode is provided. The substrate has a pixel region. The color filter layer is disposed corresponding to the pixel region. The conductive light-shielding layer is disposed corresponding to the periphery of the pixel region. The buffer layer covers the conductive light-shielding layer and color filter layer. The scan line and the data line are disposed on the buffer layer. The active device is disposed on the buffer layer and electrically connected to the scan line and data line. The pixel electrode is disposed on the buffer layer and electrically connected to the active device, wherein an overlapping area between the pixel electrode and the conductive light-shielding layer constitutes a storage capacitor. A method for manufacturing the pixel structure is also provided.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: A liquid crystal display with improved viewing angle and uncompromised transmittance is provided, along with a thin film transistor (TFT) array panel usable for such liquid crystal display. The TFT array panel includes a substrate, a plurality of gate lines formed on the substrate, a plurality of data lines formed on the substrate and intersecting the gate lines, and a plurality of thin film transistors. Each of the thin film transistors includes a gate electrode connected to one of the gate lines, a source electrode connected to one of the data lines, and a drain electrode. The TFT array panel also includes a plurality of pixel electrodes, each of the pixel electrodes connected to one of the drain electrodes and having a pair of oblique edges parallel to each other, and covering at least a portion of the drain electrodes.

Abstract: This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode formed over the switch, a plane organic layer formed over the date line and the pixel area and having no overlapping with the shielding electrode, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode and the plane organic layer in the pixel area, wherein the first portion is overlapped with the shielding electrode so as to define a storage capacitor therebetween, and the second portion overlays the plane organic layer and has no overlapping with the data line.

Abstract: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.

Abstract: In an active matrix type liquid crystal display device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. An black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. An flat film is formed on the black matrix material.

Abstract: A high-performance thin film transistor structure which is easily manufactured is provided. The thin film transistor structure includes: a first electrode; second and third electrodes apart from each other in a hierarchical level different from that of the first electrode; first, second, and third wirings connected to the first, second, and third electrodes, respectively; a main stack body disposed so as to be opposed to the first electrode with an interlayer insulating layer in between, between the first electrode, and the second and third electrodes; and a sub stack body including an insulating layer and a semiconductor layer, disposed so as to be opposed to the first wiring with the interlayer insulating layer in between, between the first and second wirings in a position where the first and second wirings overlap and/or between the first and third wirings in a position where the first and third wirings overlap.

Abstract: A low-power-consuming display device including a liquid crystal material which exhibits a blue phase is provided. A display device includes a first substrate having a pixel portion in which a pixel including a transistor is provided; a second substrate which faces the first substrate; and a liquid crystal layer between the first substrate and the second substrate; in which the liquid crystal layer includes a liquid crystal material which exhibits a blue phase; a gate of the transistor is electrically connected to a scan line, one of a source and a drain of the transistor is electrically connected to a signal line, and the other of the source and the drain of the transistor is electrically connected to an electrode; and the transistor includes an oxide semiconductor layer a hydrogen concentration of which is 5×1019/cm3 or less.

Abstract: The present disclosure relates to a liquid crystal display device having a protection element for semiconductor layer from externally intruding light and a manufacturing method of the same. The present disclosure suggests a liquid crystal display device comprising a substrate; a data line and a gate line crossing each other on the substrate; a thin film transistor formed at a crossing portion of the data line and the gate line; a passivation layer covering the thin film transistor; and an opaque protective layer forming on the passivation layer and covering the thin film transistor. The liquid crystal display device according to the present disclosure blocks the light intrusion into the semiconductor active layer of the thin film transistor to enhance the electron mobility in the active layer and the reliability of the elements.

Abstract: A device architecture for an active matrix display pixel comprising source addressing lines and TFT drain electrode formed on a first metal level of the device, the pixel electrode formed on a second, separate metal level, and the TFT gate electrode and gate addressing lines on a third metal level separated from both the first level and the second level by at least one dielectric layer, wherein the pixel electrode on the second level is electrically connected to the drain electrode on the first level through a via-hole connection and a pixel capacitor is formed by overlap of part of the pixel electrode on the second level with a portion of the gate addressing line of a neighboring line of pixels on the third level. The device is formed preferably using print based methods.

Abstract: A thin film transistor liquid crystal display (TFT-LCD) array substrate and a manufacturing method thereof are provided. The TFT-LCD array substrate comprises a gate line and a data line. A pixel electrode and a thin film transistor (TFT) are formed in a pixel region defined by intersecting of the gate line and the data line. A light-blocking layer is formed over a TFT channel region of the thin film transistor.

Abstract: An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.

Abstract: An exemplary display apparatus includes a plurality of pixel units, a plurality of gate lines, a readout line and a plurality of touch control units. The gate lines are for deciding whether to enable the pixel units. Each of the touch control units is electrically coupled to the readout line and a corresponding one of the gate lines and includes a switching element. When one of the touch control units is touched, the switching element of the touched touch control unit is turned on, and thereby a waveform on the gate line corresponding to the touched touch control unit is coupled to the readout line and a position of the touched touch control unit is determined according to a timing sequence of a waveform on the readout line. The present invention also provides a touch detection method adapted to be implemented on the above-mentioned display apparatus.

Abstract: A liquid crystal display (LCD) device essentially includes a plurality of data lines, a plurality of gate lines and a plurality of pixel units. Each pixel unit includes a first liquid-crystal capacitor, a second liquid-crystal capacitor, a first switch and a second switch. The first liquid-crystal capacitor of a pixel unit is charged via the first switch of the same pixel unit. The second liquid-crystal capacitor of a pixel unit is charged via the second switch of the same pixel unit and the first switch of a different pixel unit. The sub-pixel voltages corresponding to the first and second liquid-crystal capacitors of the same pixel unit have the same polarity. Furthermore, disclosed is a liquid-crystal display driving method for writing two data signals having same polarity respectively into the first and second liquid-crystal capacitors of a pixel unit via the same date line during two intervals partly overlapped.

Abstract: The present invention discloses a liquid crystal display (LCD) panel and the method for manufacturing the same. A transparent electrode layer serving as a pixel electrode is laid out and simultaneously, a transparent electrode layer is laid out on top of a thin-film transistor (TFT) acting as a shift register. The transparent electrode layer can mask the influence of the common voltage of the common voltage electrode layer on the TFT. Therefore, the shift in the I-V characteristics of the TFT can be prevented due to the common voltage of the common voltage electrode layer. In this way, not only power consumption of the TFT in operation can be reduced to increase the life span of the TFT, but also power chips can be prevented from malfunctioning due to an overabundant flow of electric current which causes display abnormality.

Abstract: In one aspect of this invention, a pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode having a first portion and a second portion extending from the first portion, and formed over the scan line, the data line and the switch, where the first portion is overlapped with the switch and the second portion is overlapped with the data line, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode in the pixel area, where the first portion is overlapped with the first portion of the shielding electrode so as to define a storage capacitor therebetween and the second portion has no overlapping with the second portion of the shielding electrode.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.

Abstract: The present invention provides methods for manufacturing a thin film transistor (TFT) array substrate and a display panel. The method for manufacturing the TFT array substrate comprises the following steps: forming a plurality of gate electrodes, a gate insulating layer, a semiconductor layer, an ohmic contact layer, an electrode layer and a photo-resist layer on a transparent substrate in sequence; using a multi tone mask to pattern the photo-resist layer; forming a plurality of source electrodes and a plurality of drain electrodes at both sides of the channels, respectively; heating the photo-resist layer; etching the semiconductor layer; removing the photo-resist layer; forming a passivation layer on the channels, the source electrodes and the drain electrodes; and forming a pixel electrode layer on the passivation layer. The present invention can reduce an amount of the required masks in the fabrication process, and only one wet etching is required to etch the metal material on the TFT array substrate.

Abstract: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.

Abstract: An active device array substrate including a first patterned conductive layer, a dielectric layer, a second patterned conductive layer, a passivation layer and pixel electrodes is provided. The first patterned conductive layer includes scan lines, common lines, gates and strip floating shielding patterns. The dielectric layer covering the first patterned conductive layer has first contact holes which expose a portion of the common lines, respectively. The second patterned conductive layer includes data lines, sources, drains and strip capacitance electrodes. Each strip capacitance electrode is electrically connected to one of the common lines through one of the first contact holes. A gap is formed between each data line and one strip capacitance electrode, and the strip floating shielding patterns are disposed under the data lines, the gap and the strip capacitance electrodes. Each pixel electrode is electrically connected to one of the drains through one of the second contact holes.

Abstract: A liquid crystal display including a pixel electrode having first and second sub-pixel electrodes separated from each other; a gate line electrically connected to the first and second sub-pixel electrodes through thin film transistors, a data line electrically connected to the first and second sub-pixel electrodes through the thin film transistors, a first storage electrode line having a first storage electrode overlapped with the first sub-pixel electrode, wherein a first storage voltage is applied to the first storage electrode line as a cyclic signal; and a second storage electrode line having a second storage electrode overlapped with the second sub-pixel electrode, wherein a second storage electrode voltage opposite in phase to the first storage electrode voltage is applied to the second storage electrode line as a cyclic signal, and wherein the first and second sub-pixel electrodes are electrically connected to the same gate line and to the same data line through the thin film transistors, and the pixel

Abstract: A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.

Abstract: A driving circuit and a common electrode are located within a sealant region of the first substrate, wherein the driving circuit includes switch devices and turn-line structures. The common electrode is located within the sealant region of the first substrate. The planar layer is located on the first substrate, wherein the thickness of the planar layer at the turn-line structure of the driving circuit is less than the thicknesses of other portions. The conductive layer is located on the planar layer. A second substrate having an electrode thereon is disposed opposite to the first substrate. A liquid crystal layer is located within the display region between the first substrate and the second substrate. A sealant is located within the sealant region between the first substrate and the second substrate, and conductive balls are distributed in the sealant.

Abstract: In an active matrix type liquid crystal display device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. An black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. An flat film is formed on the black matrix material.

Abstract: An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.

Abstract: A liquid crystal device includes a first substrate, an optically transparent second substrate, a liquid crystal layer provided between the first and second substrates, a plurality of light reflecting pixel electrodes provided between the first substrate and the liquid crystal layer, pixels including the pixel electrodes, a translucent electrode provided between the second substrate and the liquid crystal layer, and a reflective layer. The reflective layer is provided close to the first substrate rather than the pixel electrodes so as to overlap, in plan view, at least a part of a gap between the first pixel electrode of the pixel electrodes and the second pixel electrode adjacent to the first pixel electrode, and the cross-section of the reflective layer in a direction where the first and second pixel electrodes are adjacent to each other has a concave surface that is dented toward a side opposite to the liquid crystal layer.

Abstract: A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 ?m to less than 4 ?m. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.

Abstract: This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode having a first portion and a second portion extending from the first portion, and formed over the scan line, the data line and the switch, where the first portion is overlapped with the switch and the second portion is overlapped with the data line, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode in the pixel area, where the first portion is overlapped with the first portion of the shielding electrode so as to define a storage capacitor therebetween and the second portion has no overlapping with the second portion of the shielding electrode.

Abstract: The invention is directed to reduction of a leak current of a TFT of a pixel caused by light from a backlight or external light to improve a display quality of a liquid crystal display device. The display device of the invention includes a plurality of pixels on a first substrate, where each of the pixels includes a gate line intersecting a semiconductor layer with a gate insulation film interposed therebetween, a drain line connected to a drain region through a first contact hole and covering an upper side of the semiconductor layer extending from an intersection, and a source electrode connected to a source region through a second contact hole and covering an upper side of the semiconductor layer extending from an intersection. The device further includes a light shield layer formed under the semiconductor layer with a buffer film interposed therebetween and shielding the semiconductor layer from light.

Abstract: Disclosed is a substrate for an electro-optical device including: a substrate; a plurality of data lines and a plurality of scanning lines which intersect with other on the substrate; a pixel electrode formed in each of a plurality of pixels which configure a display region on the substrate and are defined in correspondence with intersections between the plurality of data lines and the plurality of scanning lines; a transistor provided in each of non-opening regions which discriminate between opening regions of the plurality of pixels and including a semiconductor layer including a channel region having a channel length in one direction of the display region, a data line side source/drain region electrically connected to the data line, a pixel electrode side source/drain region electrically connected to the pixel electrode, a first junction region formed between the channel region and the data line side source/drain region, and a second junction region formed between the channel region and the pixel electrode

Abstract: A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.

Abstract: An electro-optical device includes a light-shielding portion that covers a semiconductor layer of a transistor. A first conductive film and a second conductive film are connected through a contact hole through an interlayer insulating film. The light-shielding portion has an extended portion that extends into a corner of an aperture region of each pixel corresponding to the pixel electrode. The contact hole at least partially overlaps the extended portion as viewed in plan.

Abstract: A display substrate includes a gate line, a data line, a thin film transistor, a pixel electrode, and a light blocking layer. The data line is insulated from the gate line and crosses the gate line. The thin film transistor is connected to the gate line and the data line. The thin film transistor is formed in a pixel. The pixel electrode is formed in the pixel and connected to the thin film transistor. The light blocking layer is formed from a same layer as the data line, wherein the light blocking layer is adjacent to a side of the data line.

Abstract: A manufacturing method of an LCD includes forming an align key including metal on a first substrate, coating a light blocking layer overlapping the align key, transmitting an infrared ray thought the light blocking layer on the align key, recognizing the align key by the transmitting the infrared ray to align key and the light blocking layer, and forming a light blocking member by exposing and developing the light blocking layer.

Abstract: Stray light in an oblique direction penetrates a channel part of a thin-film transistor, which sometimes causes light leakage current. This phenomenon becomes more pronounced in the case of using an optical system with high intensity, leading to deterioration in an image quality. To prevent the light that possibly penetrates an equivalent optical waveguide from reaching the channel part, on the condition that a first insulating layer is set to have a layer-thickness t (nm) and a refraction index n, a relation is to be expressed by the following expression. t<(0.61×?)/(n×sin ?) A value of ? is set to a lower limit 400 (nm) of a visible light wavelength and a value Lc (nm) is set to a distance between an end of a light-shielding layer and an end of a channel region. With those values, an expression of nt2/244 (nm)<Lc (nm) is set up.

Abstract: A driving circuit and a common electrode are located within a sealant region of the first substrate, wherein the driving circuit includes switch devices and turn-line structures. The common electrode is located within the sealant region of the first substrate. The planar layer is located on the first substrate, wherein the thickness of the planar layer at the turn-line structure of the driving circuit is less than the thicknesses of other portions. The conductive layer is located on the planar layer. A second substrate having an electrode thereon is disposed opposite to the first substrate. A liquid crystal layer is located within the display region between the first substrate and the second substrate. A sealant is located within the sealant region between the first substrate and the second substrate, and conductive balls are distributed in the sealant.

Abstract: A liquid crystal display (LCD) device partially or substantially blocks light from a light source from exciting a semiconductor layer. The LCD device includes a substrate, a semiconductor layer, a light-shielding layer, and a light source. The light source directs light toward a lower surface of the substrate. The light-shielding layer is formed between the substrate and the semiconductor layer. Some or all of the light directed towards the semiconductor layer by the light source is blocked by the light-shielding layer.

Abstract: A liquid crystal display according to the present invention includes a first substrate and a second substrate facing each other, a pixel electrode disposed on the first substrate and including a first sub-pixel electrode and a second sub-pixel electrode spaced apart from the first sub-pixel electrode by a gap, a common electrode disposed on the second substrate, a shielding member disposed on the first substrate or the second substrate and overlapping the gap between the first sub-pixel electrode and the second sub-pixel electrode, an alignment layer disposed on at least one of the pixel electrode and the common electrode, and a liquid crystal layer disposed between the first substrate and the second substrate.

Abstract: In a liquid crystal substrate in which a matrix of reflecting electrodes is formed on a substrate, a transistor is formed corresponding to each reflective electrode and a voltage is applied to the reflective electrode through the transistor. A silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film and the thickness is set to a value in response to the wavelength of the incident light to maintain a substantially constant reflectance.