Abstract: A panel a gate line on a first substrate, a gate insulating layer covering the gate line, a semiconductor layer on the gate insulating layer, a data line intersecting the gate line and including a source electrode and a drain electrode facing the source electrode on the semiconductor layer, a connection assistant separated from the data line, a passivation layer covering the semiconductor layer and including contact holes exposing the connection assistant and a pixel electrode including a plurality of sub-pixel electrodes and formed on the passivation layer. The sub-pixel electrodes are connected to the connection assistant through the contact holes, are electrically connected to each other through the connection assistant and at least one of the sub-pixel electrodes is electrically connected to the drain electrode.

Abstract: A liquid crystal display includes a substrate, a gate line over the substrate, a gate dielectric over the gate line, a first semiconductor feature over the gate dielectric, a first drain electrode and a first data line overlapping with the first semiconductor feature, a pixel electrode connected to the first drain electrode and overlapping with the first data line, and a light blocking film overlapping with the first semiconductor feature and the first data line.

Abstract: The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

Abstract: Residual direct-current charges may be accumulated and distributed non-uniformly on the built-in color filters in a displaying panel such as the liquid-crystal-on-silicon displaying device, and thus results in the non-uniformity of the internal electric field that controls the arrangement of liquid crystal molecules. To reduce residual direct-current charges so as to cause the internal electric field to be substantially uniform, the present invention provides a structure of the display panel including a plurality of shields for respectively enclosing a plurality of color filters, wherein each shield is connected to a corresponding pixel electrode by a conductive wire.

Abstract: The liquid crystal display device of the invention has a plurality of pixels, each including a first electrode 111, a second electrode 131 and a vertically aligned liquid crystal layer 120 interposed between the first and second electrodes. The first electrode has at least one opening 114 or cut 113 formed at a predetermined position in the pixel. At least one shading conductive layer 116 electrically connected to the first electrode is formed at least near the at least one opening or cut. In each of the plurality of pixels, a plurality of regions in which the directions of tilt of liquid crystal molecules are different from one another are formed when at least a predetermined voltage is applied across the liquid crystal layer.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract: By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

Abstract: A metal electrode also serving as a black matrix is so formed as to cover the periphery of an ITO pixel electrode. A region where the pixel electrode and the metal electrode coextend also serves as an auxiliary capacitor. Since the auxiliary capacitor can be formed by using a thin insulating film, it can have a large capacitance. By virtue of the structure in which the black matrix also serves as the auxiliary capacitor, it is not necessary to provide an electrode dedicated to the auxiliary capacitor, thereby preventing reduction in aperture ratio. Further, the black matrix can completely shield a source line and a gate line from light.

Abstract: A liquid crystal display device includes first and second substrates facing each other with a predetermined space therebetween, a liquid crystal material layer disposed between the first and second substrates, a seal pattern formed between the first and second substrates to surround the liquid crystal material layer, and a blocking layer formed over a first surface of the second substrate to cover the seal pattern.

Abstract: A liquid crystal layer is provided between a pair of substrates, one of the pair of substrates is provided with a pixel region including a TFT and a light shielding layer in which an opening portion is formed, a semiconductor layer composing the TFT is overlapped with the light shielding layer and formed along one side of the opening portion, and an alignment of a liquid crystal molecule is controlled such that light which transmits through the liquid crystal layer is incident as polarized light perpendicular to the one side of the opening portion. The liquid crystal layer is particularly made of more a TN mode liquid crystal.

Abstract: A liquid crystal display device including a first substrate, a second substrate which faces the first substrate and a liquid crystal layer which is interposed between the first and second substrates. The first substrate comprises an insulating substrate, a gate line which is disposed on the insulating substrate, data wires which comprises first and second data lines insulatedly crossing the gate line. The first substrate includes a first drain electrode electrically connected with the first data line, and a second drain electrode electrically connected with the second data line, a pixel electrode which comprises a first sub-pixel electrode electrically connected with one of the first and second drain electrodes, and a second sub-pixel electrode separated from the first sub-pixel electrode and electrically connected with the other one of the first and second drain electrodes. A semiconductor layer is disposed between the data wires and the insulating substrate.

Abstract: An array substrate device having a color filter-on-thin film transistor (COT) structure for a liquid crystal display device includes a gate line formed on a substrate along a transverse direction, the gate line including a gate pad at one end thereof, a first insulating layer formed on the substrate to cover the gate line, the first insulating layer exposing a first portion of the gate pad, a data line formed over the first insulating layer along a longitudinal direction on the substrate, the data line defining a pixel region with the gate line and including a data pad at one end thereof, a thin film transistor formed at a crossing region of the gate and data lines, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, a black matrix overlapping the thin film transistor, the gate line, and the data line except a second portion of the drain electrode, a second insulating layer formed over an entire surface of the substrate to cover the black matr

Abstract: A pixel structure includes a substrate, a floating light-shielding pattern disposed on the substrate, an insulating layer disposed on the substrate and the light-shielding pattern, a data line disposed over and corresponding to the light-shielding pattern, a dielectric layer disposed on the data line and the insulating layer, and a third layer conductive pattern disposed on the dielectric layer. The third layer conductive pattern includes a common line and a common pattern. The common pattern includes two common branches arranged in parallel, and there is a space between the two common branches and over the data line.

Abstract: An exemplary liquid crystal display (100) includes gate lines (122), and data lines (123) cooperatively defining pixel units. Each pixel unit includes a first thin film transistor (TFT) (125), a second TFT (126), a first pixel electrode (127), and a second pixel electrode (128). Gate electrodes of the two TFTs are connected to one of the gate lines. A source electrode of the first TFT is connected to one of the data lines. A drain electrode of the first TFT is connected to the first pixel electrode. A source electrode of the second TFT is connected to the first pixel electrode. A drain electrode of the second TFT is connected to the second pixel electrode. A channel width/length ratio of the second TFT is such that a voltage of the drain electrode thereof is less than a voltage of the source electrode thereof when the second TFT is switched on.

Abstract: A liquid crystal display device includes: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a pixel region; a thin film transistor connected to the gate line and the data line, the thin film transistor including a gate electrode, a source electrode and a drain electrode; a first shielding layer covering a space between the source and drain electrodes; a color filter layer on the first shielding layer; a pixel electrode on the color filer layer; a black matrix on the second substrate, the black matrix corresponding to the gate line and the data line; a common electrode on the black matrix; a patterned spacer on the common electrode, the patterned spacer corresponding to the black matrix; and a liquid crystal layer between the pixel electrode and the common electrode.

Abstract: A pixel structure of a liquid crystal display (LCD) includes a scan line, a data line and a thin film transistor (TFT) disposed on the substrate. The TFT has a source electrically connected to the date line and a gate electrically connected to the scan line. A shielding electrode disposes on the substrate, wherein the same metal layer makes the shielding electrode, the source and the drain. Furthermore, the data line makes at least two different patterned metal, layers which are not formed simultaneously and the patterned metal layers are electrically connected to each other. A pixel electrode covers the part of the shielding electrode and electrically connects to the drain.

Abstract: An electro-optical device includes light-shielding portions interposed between pixel electrodes and transistors. Each light-shielding portion includes an overlapping portion that overlaps and is wider than the corresponding transistor. A contact hole that connects each pixel electrode with the corresponding transistor overlaps the overlapping portion of the light-shielding portion.

Abstract: An electro-optical device includes plural pixels in a matrix. Switching elements of the pixels extend in a first direction in which data lines extend. Switching elements of pixels that are adjacent in a second direction that intersects the first direction are shifted out of alignment in the first direction. Light shield layers are arranged to make one of parasitic capacitance or aperture ratio the same between pixels that are adjacent in the second direction.

Abstract: A liquid crystal display that is subject to pixel-high defects due to manufacturing anomalies is provided with programmable repair means for each pixel electrode. In one embodiment, a transistor-array substrate is provided with plural gate lines that are separated from each other by a first interval, plural data lines that are insulated from the gate lines while crossing the gate lines, and separated from each other by a second interval larger than the first interval, thereby defining plural pixel areas. Each pixel area has a corresponding pixel unit comprising a switching device, pixel electrode, and repair electrode. The repair electrode branches from a neighboring gate line and extends such that the repair electrode is in overlapping spaced-apart relation with the pixel electrode and selectively connectable to the pixel electrode.

Abstract: In an active matrix type liquid crystal display device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. An black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. An flat film is formed on the black matrix material.

Abstract: To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

Abstract: A display device includes a thin film transistor (TFT) substrate, a countering substrate facing the TFT substrate, a sealant, and a liquid crystal layer interposed between the TFT substrate and the countering substrate. The TFT substrate includes a substrate having a display area and a peripheral area, a first TFT formed in the peripheral area and including a semiconductor layer and a resistive contact member formed on the semiconductor layer, a light blocking semiconductor pattern, a second TFT formed in the display area and including a gate electrode. The sealant couples the TFT substrate to the countering substrate, and covers the first TFT.

Abstract: An array substrate for an in-plane switching mode liquid crystal display device includes: a substrate; a gate line on the substrate; first and second common lines parallel to and spaced apart from the gate line; a data line crossing the gate line to define a pixel region; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor, the pixel electrode having a plate shape; a plurality of common electrodes connected between the first and second common lines, the plurality of common electrodes overlapping the pixel electrode; and first and second shielding electrodes parallel to the data line, the first and second shielding electrodes spaced apart from each other with respect to the data line.

Abstract: A liquid crystal display device includes: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a pixel region; a thin film transistor connected to the gate line and the data line, the thin film transistor including a gate electrode, a source electrode and a drain electrode; a first shielding layer covering a space between the source and drain electrodes; a color filter layer on the first shielding layer; a pixel electrode on the color filer layer; a black matrix on the second substrate, the black matrix corresponding to the gate line and the data line; a common electrode on the black matrix; a patterned spacer on the common electrode, the patterned spacer corresponding to the black matrix; and a liquid crystal layer between the pixel electrode and the common electrode.

Abstract: To provide a liquid crystal display device with high visibility by forming a light shielding film without requiring additional steps. The liquid crystal display device of the invention has a structure in which liquid crystal is injected and sealed between an active matrix substrate over which a pixel portion including a plurality of TFTs, wires, first electrodes (pixel electrodes) and the like are formed and a counter substrate over which a second electrode (counter electrode), a colored film and the like are formed. A part of a conductive film forming electrodes of the TFTs, the wires and the like formed over the active matrix substrate functions as a light shielding film in the pixel portion.

Abstract: A pixel structure includes a substrate, a floating light-shielding pattern disposed on the substrate, an insulating layer disposed on the substrate and the light-shielding pattern, a data line disposed over and corresponding to the light-shielding pattern, a dielectric layer disposed on the data line and the insulating layer, and a third layer conductive pattern disposed on the dielectric layer. The third layer conductive pattern includes a common line and a common pattern. The common pattern includes two common branches arranged in parallel, and there is a space between the two common branches and over the data line.

Abstract: A display device is disclosed. The display device has a first substrate having a thin film transistor connected to a pixel electrode. Further, the display device has a second substrate opposed to the first substrate and having a resin black matrix.

Abstract: A circuit board includes: a plurality of data lines and a plurality of scanning lines; a transistor that has a semiconductor layer and a gate electrode. The semiconductor layer includes a first junction region that is formed between the channel region and the data-line-side source/drain region, and a second junction region that is formed between the channel region and the pixel-electrode-side source/drain region, wherein the first insulator film has an elongated groove, which extends along at least one of the first junction region and the second junction region over the substrate in plan view, and the gate electrode has an inner groove portion that is provided in an extending manner from a portion thereof overlapping the channel region to at least a part inside the groove.

Abstract: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.

Abstract: Disclosed is a liquid crystal display apparatus including a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. A pixel area is defined on the first substrate. A pixel electrode includes a cut-out pattern and is formed in the pixel area. A conductive pattern is disposed between the first substrate and the pixel electrode, and partially overlaps the cut-out pattern when viewed from a plan view. A common electrode is disposed on the second substrate and includes a domain divider dividing the pixel area into a plurality of domains. A light blocking member is disposed on one of the first substrate and the second substrate, and is positioned corresponding to a portion of areas in which the cut-out pattern overlaps the conductive pattern within the pixel area.

Abstract: Displays and methods of manufacturing displays are disclosed herein. An embodiment of a method of manufacturing a display comprises manufacturing a circuit board; forming a hole in a material; attaching the circuit board to the material, wherein the hole forms a cavity upon attachment of the circuit board to the material; and connecting a light source to the circuit board, the light source being located within the cavity.

Abstract: A TFT substrate having a storage capacitor with an increased capacitance and aperture ratio, and a simplified method of fabricating the same, includes gate and data lines crossing each other to define pixel areas; a gate insulating film between the gate and data lines; TFTs connected to the gate and data lines; a semiconductor pattern defining a channel of the TFTs and overlapped by the data lines; a passivation film covering the data lines and the TFTs; and at least one pixel electrode connected to a TFT and provided within a pixel hole that is arranged within a pixel area. The pixel hole is formed through the passivation film and partially through the gate insulating film. Further, a storage capacitor includes a portion of the pixel electrode that overlaps with an underlying gate line with a portion of the gate insulating film that defines the pixel hole.

Abstract: Disclosed is a thin film transistor substrate for a liquid crystal display and a method for repairing the substrate. The substrate comprises an insulating substrate; a black matrix formed on the insulating substrate having apertures in areas of pixels, shaped as a net; an insulating layer covering the black matrix; gate wiring formed on the insulating layer, the gate wiring including gate lines extended in a first direction across the substrate and gate electrodes connected to the gate lines; a gate insulating layer formed over the gate wiring; a semiconductor layer formed over the gate insulating layer; an ohmic contact layer formed over the semiconductor layer; data wiring including source electrodes and drain electrodes formed separated from each other over the ohmic contact layer, and data lines connected to the source electrodes and crossing the gate lines to define pixels; a protection layer formed over the data wiring; and pixel electrodes electrically connected to the drain electrodes.

Abstract: A liquid crystal display and a driving method thereof which enables stable operation at a low temperature. A liquid crystal display includes a panel with a first substrate on which a conductive black matrix is formed and a second substrate which faces the first substrate, and liquid crystal interposed between the substrates. The first and second substrates are assembled together using a sealant. The liquid crystal display further includes a temperature sensor for sensing a temperature of the panel and/or a temperature of its surroundings, and a power supply for controlling the temperature of the panel in response to the temperature sensed by the temperature sensor.

Abstract: A thin film transistor substrate and method of fabrication is presented. The thin film transistor includes gate and data lines forming a pixel area and separated by a gate insulating layer on a LCD substrate. A thin film transistor in the pixel area has a semiconductor pattern which forms a channel. A pixel electrode in the pixel area contains a transparent conductive film. A gate metal film is adjacent to a portion of transparent conductive film in the pixel area. A semiconductor passivation film is formed by exposing the semiconductor in the channel to an oxygen or nitrogen plasma. A gate pad connected with the gate line contains the transparent film in a pad section and the transparent film and the gate film in a connection area connecting the gate pad and the gate line. A data pad connected with the data line contains the transparent film.

Abstract: A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

Abstract: A novel structure of an active display device is disclosed. The device is characterized as having at least one display device comprising a substrate having an insulated surface with at least one thin film transistor (TFT) formed over the substrate and a gate insulating film and gate electrode adjacent to the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. In one embodiment, an interlayer insulating film covers the TFT and an aluminum lead electrode is formed over the interlayer insulating layer that is electrically connected to one of the source or drain regions of the TFT through a hole of the interlayer insulating film. In another embodiment of the invention the first and second holes of the interlayer insulating layer do not overlap.

Abstract: A method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions; a first insulation film on a portion of the substrate; forming a gate electrode in a portion of the active pattern where the first insulation film is formed; a second insulation film on the substrate; forming a plurality of first contact holes exposing a portion of the source and drain regions and a second contact hole exposing a portion of the data line; forming a source electrode from a transparent conductive material connected to a source region within the respective first contact hole and a data line within the second contact hole; and forming a pixel and a drain electrodes from the transparent conductive material connected to a drain region within the respective first contact hole.

Abstract: An electro-optical device includes: a light-shielding film provided below a transistor in a peripheral area surrounding a pixel area of the display. The light-shielding film includes a rectangular opening formed in a channel length direction of the transistor.

Abstract: A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.

Abstract: A thin film transistor (TFT) array panel is provided, which includes: a plurality of gate lines transmitting gate signals; a plurality of data lines intersecting the gate lines and transmitting data signals, each data line including first and second data line branches electrically connected to each other and spaced apart from each other; a plurality of pixel electrodes electrically connected to the gate lines and the data lines through thin film transistor and covering edges of the first or the second data line branches; a passivation layer disposed between the data lines and the pixel electrodes; and a light blocking member covering gaps between the first data line branches and the second data line branches.

Abstract: A display substrate includes a gate line, a data line, a thin film transistor, a pixel electrode, and a light blocking layer. The data line is insulated from the gate line and crosses the gate line. The thin film transistor is connected to the gate line and the data line. The thin film transistor is formed in a pixel. The pixel electrode is formed in the pixel and connected to the thin film transistor. The light blocking layer is formed from a same layer as the data line, wherein the light blocking layer is adjacent to a side of the data line.

Abstract: An amorphous-silicon TFT (thin-film-transistor) in an LCD device has a larger channel length at both the edge portions of the channel of the TFT compared to the central portion of the channel by forming chamfers at the corners of the source and drain electrodes. The larger channel length at both the edge portions reduces the leakage current caused by the turned-around light incident onto the channel.

Abstract: A display device having a source line formed over a substrate; a gate line formed over the substrate extending across the source line; a pixel formed over the substrate at an intersection of the source and gate lines, the pixel having: first and second thin film transistors where a source or drain of the first thin film transistor is electrically connected to the source line; a pixel electrode electrically connected to a source or drain of the second thin film transistor where the first and second thin film transistors are electrically connected between the pixel electrode and the source line; where a portion of the source line covers a portion of the first thin film transistor, where a width of the source line is larger than a width of a channel region of the first thin film transistor, and where the pixel electrode does not overlap the source line.

Abstract: A method for producing an active-matrix substrate including a board, pixels, thin-film transistors that switch the pixels, and source lines and gate lines electrically connected to the thin-film transistors includes forming a conduction portion that provides electrical connection between the source lines and the gate lines using an organic conductive material at the same time as forming either the source lines or the gate lines; and breaking the electrical connection provided by the conduction portion.

Abstract: A semiconductor device having a light-emitting element with excellent light-emitting characteristics is provided.

Abstract: A gate wire including a gate line and a gate electrode is formed on an insulating substrate of a TFT array panel. A semiconductor pattern made of amorphous silicon is formed on the gate insulating layer covering the gate wire. A data wire including a data line, a source electrode, and a drain electrode is formed on the semiconductor pattern or the gate insulating layer covering the gate wire. A part of the semiconductor pattern extends under the data line, and a light blocking member overlapping the semiconductor pattern under the data line is formed using the same layer as the gate wire. The light blocking member is to prevent light incident upon the substrate from a backlight from entering the amorphous silicon layers; therefore, the stripes of different brightness and waterfall phenomenon in which the stripes move up and down can be removed in an LCD using a backlight driven by a rectangular wave of ON/OFF signals outputted from inverter.

Abstract: A method of manufacturing a display device permits use of a high-performance and flexible substrate, without need for a high-temperature process. In a manufacturing method of an active matrix type display device having a plurality of display elements arrayed two-dimensionally, materials (SR0-SR4) of active elements are not formed by direct deposition or the like on a substrate (PL1) forming display elements, but the active elements are formed by separately forming materials of a semiconductor or the like and distributing them on the substrate. The active element materials distributed at locations except for desired locations are subjected to a process of substantially removing electrical continuity thereof so as to prevent undesired electrical continuity.

Abstract: A liquid crystal display device comprising a first substrate, a second substrate, a liquid crystal layer and a shading film is provided. The first substrate includes a display region and a non-display region. The liquid crystal layer is sandwiched between the first substrate and the second substrate. The shading film is located between the first substrate and the liquid crystal layer covering the non-display region. With the shading film covering the entire non-display region, the problem of light leakage from the edge of the display device is resolved.

Abstract: A thin film transistor array panel includes; a substrate, a light blocking member disposed on the substrate wherein the light blocking member forms a storage space, a gate line which extends in a first direction on the substrate and includes a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor disposed on the gate insulating layer, a data line disposed on the gate insulating layer, which extends in a second direction, and includes a source electrode, a drain electrode disposed substantially opposite the source electrode on the semiconductor, a passivation layer disposed on the data line and the drain electrode and which includes a contact hole which exposes the drain electrode, a color filter disposed within the storage space, and a pixel electrode disposed on the passivation layer and connected to the drain electrode through the contact hole.