Abstract: A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass.

Abstract: A method for photolithography in semiconductor device manufacturing comprises defining test critical dimension target for a photolithography mask, measuring a mask critical dimension, comparing mask critical dimension to the test critical dimension target and determining a critical dimension deviation, determining a photolithography light base energy in response to the critical dimension deviation, and exposing the wafer according to the photolithography light base energy.

Abstract: Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.

Abstract: A method for producing an element having at least one arbitrarily freely formed surface (freeform surface) having a high accuracy of form and a low surface roughness. The freeform surface is obtained by at least one first processing step with a shaping material processing method in which at least an approximation to the desired freeform surface (target form) is effected, and at least one second step with a material processing method that smooths the surface, wherein at least during the second processing step of the smoothing material processing, the element (1) to be processed is elastically stressed by force introduction such that the freeform surface to be smoothed is processed by smoothing processes for spherical, plane or aspherical surfaces.

Abstract: This invention discloses an immersion exposure method which executes immersion exposure for an exposure target film by transferring an image of a pattern formed on a mask onto the exposure target film through an immersion medium. A first vapor pressure as the target value in an immersion exposure atmosphere which surrounds the immersion medium is set. A second vapor pressure in the immersion exposure atmosphere is measured. The first vapor pressure is compared with the second vapor pressure. Whether to adjust the vapor pressure in the immersion exposure atmosphere is selected in accordance with the comparison result.

Abstract: An exposure apparatus comprises an optical system configured to illuminate a reticle, including an imaging optical system having an optical element, a reflecting surface which reflects light toward the optical element, and a processor which extracts information from a first signal based on first light which is incident on the imaging optical system and reflected by the reflecting surface and a surface of the optical element, and information from a second signal based on second light which is incident on the imaging optical system, and which obtains information indicating a surface condition of the optical element using the information extracted from the first and second signals.

Abstract: An exposure apparatus includes a first driving mechanism which drives a first optical element, a second driving mechanism which drives a second optical element, and a control unit which controls the first driving mechanism and the second driving mechanism so as to adjust the astigmatism of a projection optical system. The amount of change in the first order component of the astigmatism and the amount of change in the second order component of the astigmatism upon driving the first optical element by the first driving mechanism have a first ratio, and the amount of change in the first order component of the astigmatism and the amount of change in the second order component of the astigmatism upon driving the second optical element by the second driving mechanism have a second ratio which is different from the first ratio.

Abstract: An injection-locked laser is disclosed. The injection-locked laser comprises a seed laser, an oscillator into which a certain component of light output from the seed laser is injected as seed laser light, a frequency converter which shifts a frequency of the remaining component of the light output from the seed laser, a photodetector which detects light obtained by synthesizing the light output from the oscillator and the light output from the frequency converter, and a controller which controls an optical path length of the oscillator based on a beat signal component contained in the signal output from the photodetector.

Abstract: An exposure apparatus which transfers a pattern of a reticle onto a substrate via a projection optical system comprises a controller configured to correct an image of the pattern, formed on the substrate, in accordance with a shape of the reticle in a standby state until an exposure operation starts.

Abstract: A method and system are provided of using a patterning device. An exemplary method includes performing a first exposure of a surface corresponding to image data, determining an image deficiency within a region of the first image, adjusting the image data to compensate for the image deficiency, and performing a second exposure of the surface corresponding to the adjusted image data during a second pass of the patterning device with respect to the surface. The first exposure occurs during a first pass of the patterning device with respect to the surface to produce a first image on the surface.

Abstract: Method and apparatus are provided for automated determination and adjustment of height and tilt of a substrate surface within a lithography system. The method includes: directing a beam of light onto the substrate surface, which reflects off the substrate surface as a reflected beam; optically splitting the reflected beam into a first reflected beam portion and a second reflected beam portion; impinging the first reflected beam portion onto a first detector plane of a first optical detector to generate intensity data, and impinging the second reflected beam portion onto a second detector plane of a second optical detector to generate intensity data, and utilizing the generated data in determining height and tilt of the substrate surface relative to a nominal writing plane of the lithography system. Responsive to the determination, focus or tilt of the system's writing beam, or position of the substrate surface within the system, is adjusted.

Abstract: A lithographic projection apparatus is disclosed that includes a predictive system configured to predict changes in projection system aberrations with time with respect to measured aberration values, a modelling system configured to determine an application-specific effect of said predicted projection system aberration changes on at least one parameter of an image for a selected pattern, a control system configured to generate a control signal specific to the selected pattern according to said predicted projection system aberration changes and their application-specific effect on the at least one parameter of the image, and an image adjusting system, responsive to the control signal, to compensate for the application-specific effect of said predicted projection system aberration changes on the image.

Abstract: An exposure apparatus includes an original-form stage for holding an original form, a projection optical system for introducing light from the original form into an object to be exposed, and a detection optical system for detecting positions at plural points on the original form, in an optical-axis direction of the projection optical system, wherein a space for enclosing the original-form stage is different from a space for enclosing at least part of the detection optical system.

Abstract: A system and method for optimizing an illumination source to print a desired pattern of features dividing a light source into pixels and determining an optimum intensity for each pixel such that when the pixels are simultaneously illuminated, the error in a printed pattern of features is minimized. In one embodiment, pixel solutions are constrained from solutions that are bright, continuous, and smooth. In another embodiment, the light source optimization and resolution enhancement technique(s) are iteratively performed to minimize errors in a printed pattern of features.

Abstract: An alignment method of mask patterns in patterning processes includes forming a first layer by transferring a first mask pattern onto a wafer or a layer formed on the wafer, and forming a second layer by transferring a second mask pattern onto the first layer. The method particularly includes a first alignment step of performing, when forming the first layer, alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern, and alignment based on an amount of deviation of superposition of the second layer pattern on the first layer pattern. The deviation is caused by linear expansion and contraction of a wafer and caused by an orthogonal error between a wafer and a mask pattern, and also the deviation is obtained by measuring in advance in pattering processes successively performed for a plurality of wafers.

Abstract: A lithography apparatus includes a projection system configured to project a radiation beam onto a substrate, a detector configured to inspect the substrate, and a substrate table configured to support the substrate and move the substrate relative to the projection system and the detector. The detector is arranged to inspect a portion of the substrate while the substrate is moved and before the portion is exposed to the radiation beam.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: A correction of a local flare generated at a time of exposure when manufacturing a semiconductor device, wherein a substantial numerical aperture to a pattern in a region to be exposed is calculated for the each region, after that, the flare correction amount for the pattern in the each region is adjusted in conformity with the substantial numerical aperture and exposure conditions in the each region. Backed by this, the effect of the local flare on the pattern exposed by photolithography can be quantitatively corrected in conformity with the respective exposure conditions, so that a desired pattern can be formed readily and accurately.

Abstract: The width values of transferred patterns of respective evaluation patterns transferred using a test photo mask (11) are calculated by first calculation unit (12) based on the relationship with the opening ratio of flare generation patterns. The distribution of the calculated width values of the respective transferred patterns is linearly approximated by second calculation unit (13) and the inclination thereof is calculated. On the basis of a table defining the inclination of the width values of the respective transferred patterns (the ratio of dimension fluctuation), the amount of correction is changed for each pattern by correction unit (14). Consequently, the amount of dimension fluctuation caused by local flares can be accurately calculated. This enables accurately performing pattern-dimension corrections against local flares.

Abstract: The imaging or exposure device comprises a radiation source (1), a reticle (3) mounted between the radiation source and an optical projection system (4) for shaping the radiation downstream from the reticle (3), the optical projection system (4) comprising a series of mirrors (7, 8, 10, 11) including at least two mirrors (10, 11) that are deformable, having deformer members (12, 13) connected to a control unit (14) associated with an image analyzer (15) to deform the two deformable mirrors in separate manner, firstly as a function of differences relative to an image quality setpoint, and second as a function of differences relative to an image distortion setpoint.

Abstract: An exposure apparatus includes a stage configured to hold a substrate; a projection optical system configured to project light from an original onto the substrate; a measurement device configured to measure a position of a surface of the substrate in an optical axis direction of the projection optical system; and a controller configured to i) cause the measurement device to measure positions of the surface with respect to a plurality of points on the surface over a plurality of shot areas, ii) obtain a shape of the surface based on the positions of the surface measured with respect to the plurality of points, and iii) cause the stage to be moved based on the obtained shape between an exposure of a first shot area and an exposure of a second shot area, and the measurement device to measure a position of a surface in the second shot area.

Abstract: Embodiments of the invention relate to a method for determining exposure settings for a target field on a substrate in a lithographic exposure process, including providing calibration data by determining the position of a calibration field in a first direction at a plurality of calibration positions in a second and third direction relative to the position of the calibration field. The method also includes providing production data by establishing the position on the substrate of the target field in the second and third direction and by measuring the position of the exposure field in the first direction at least one measurement position relative to the position of the exposure field in the second and third direction.

Abstract: A system and method of leveling the topography of a semiconductor wafer surface is presented. The system may induce low-order lens aberration to control the focal plane dynamically. The system may include a leveling sensor which measures the changes in topography on the surface, as well as an analyzer to determine the aberration to be induced. In addition, the system may include a controller that dynamically adjusts at least one lens to induce such aberration. In another arrangement, the system may control the focal plane by dividing the exposure slit into smaller slits. In this arrangement, the analyzer may be used to determine the appropriate number of divisions to make to produce a focal plane that closely matches the surface of the wafer. In addition, the controller may adjust the stage height and tilt for each division to produce such a focal plane.

Abstract: The invention relates to a method of transferring a substrate from a first substrate holder to a second substrate holder in a lithographic projection apparatus by means of a transfer unit on the basis of transfer data available thereto. The second substrate holder has a surface provided with a first plurality of burls. In the method, a memory encoded with burl position data and substrate position data is provided. Subsequently, a substrate is provided on the first substrate holder. The position error and orientation of the substrate is then measured. On the basis of the burl position data, substrate position data and orientation as measured orientation adjustment data are calculated. The orientation of the substrate is subsequently adjusted in accordance with the orientation adjustment data. The substrate is then transferred from the first substrate holder to the second substrate holder by the transfer unit and placed on the second substrate holder.

Abstract: An exposure process using photomasks, the process includes the steps of: providing a plurality of glass photomasks for optical lithography with respect to a target substrate to be processed, the photomasks having identical exposure patterns, and exposing the target substrate a plurality of times using the plurality of glass photomasks.

Abstract: In known lithographic apparatus the projection beam is symmetrical, while the process window can be asymmetrical. The invention addresses this problem by providing a lithographic apparatus comprising an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein there is further provided a system for providing an asymmetric projection beam bandwidth distribution.

Abstract: The present invention provides a method for determining the forces to be applied to a substrate in order to deform the same and correct for overlay misalignment.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.

Abstract: A drawing point data obtainment method is a method for obtaining drawing point data that is used when an image is drawn on a drawing object by relatively moving a drawing point formation area, in which a drawing point is formed based on the drawing point data, with respect to the drawing object and by sequentially forming, based on the movement of the drawing point formation area, the drawing points on the drawing object. In the drawing point data obtainment method, information about a drawing point data track of the drawing point formation area in original image data of the image is obtained and a plurality of drawing point data sets corresponding to the drawing point data track is obtained, based on the obtained information about the drawing point data track, from the image data.

Abstract: A lithographic apparatus includes an illumination system configured to condition a beam of radiation, a support structure configured to hold a reticle, a substrate table configured to hold a substrate, and a projection system configured to project a beam onto the substrate table. The numerical aperture of the illumination system is larger than the numerical aperture of the projection system. The apparatus also includes a radiation redirection device configured to re-direct ?>1 components of the beam of radiation to within the numerical aperture of the projection system.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system including an optical element of which at least one of a position, orientation, and shape can be regulated, a regulator configured to regulate the at least one of the position, orientation, and shape of the optical element, and a controller configured to calculate, using quadratic programming, a regulation amount of the optical element that minimizes a value of an objective function expressed by a first dummy variable serving as an upper limit of a linear optical characteristic value of the projection optical system, and a second dummy variable serving as an upper limit of a quadratic optical characteristic value of the projection optical system, and to control the regulator based on the calculated regulation amount.

Abstract: A method for correcting a field-constant astigmatism of a projection objective of a microlithography projection exposure apparatus, the projection objective having an arrangement composed of a plurality of optical elements that images at least a part of an object onto an off-axis image field lying outside at least one optical axis, the arrangement of the plurality of optical elements having a plane of symmetry that is defined by the at least one optical axis and a center of the image field, includes adjusting a position of at least one element of the plurality of optical elements in such a way that at least one linear and/or quadratic astigmatism is produced that compensates the field-constant astigmatism at least partially. A projection objective of a projection exposure apparatus, as well as a microlithographic method for producing micropatterned components uses the method.

Abstract: A lithography apparatus includes a condenser system and a projection system. The condenser system is configured to irradiate a mask with non-telecentric incident radiation. The projection system is configured to collect and focus a radiation diffracted at an absorber pattern on the mask to a sample. The projection system is further configured to compensate, in the diffracted radiation, a phase and/or intensity variation resulting from the diffraction of the non-telecentric incident radiation, wherein the diffraction results from an absorber pattern provided on the mask.

Abstract: Actuator arrangement, serving in particular to effect a deformation of an optical element, with a first, specifically fluidic-based actuator device (110.3), which is designed to exert on a body (108, 109.1) associated with the first actuator device (110.3) a first actuator force in an amount up a first maximum force value, wherein the arrangement includes a second, specifically fluidic-based actuator device (110.4), wherein the second actuator device (110.4) is designed to exert on the body (108, 109.1) associated with the first actuator device (110.3) a second actuator force in an amount up a second maximum force value, wherein further the second actuator device (110.4) is arranged in such a way in relation to the first actuator device (110.3) that the respective lines of action of the first actuator force and the second actuator force have at most a small distance from each other in the area of the their respective points of application on the body (108, 109.

Abstract: An image position measuring apparatus is provided with a photographing unit including an image pickup device and/or a lens to measure a position of a reference mark formed on a work and a correcting unit for correcting distortion(s) of the image pickup device and/or the lens. An exposure apparatus is provided with an image position measuring apparatus and an exposure unit for exposing the work based on image data corrected based on positional information of the reference mark photographed by the image position measuring apparatus. Influences of the distortions of the image pickup device and the lens can be eliminated and accuracy of measurement of the position of the reference mark provided to the work can be improved.

Abstract: An in-situ interferometer includes an image modifying optic that produces light ray bundles. The light ray bundles are projected onto a reticle with a plurality of measurement fiducials encoded onto a face of the reticle. The measurement fiducials are exposed onto a sensing plane and their locations measured. Aberrations in the projection system are determined from the measurements of the exposed reticles.

Abstract: An image recording apparatus for acquiring a main image from an image sensing portion and recording the main image on a recording medium has: an image acquirer that acquires, when acquiring the main image from the image sensing portion, also a short-exposure image shot with an exposure time shorter than an exposure time of the main image; a partial image cutter that cuts out a partial image from the short-exposure image; and a recording controller that records, on the recording medium, in association with the main image, a sub image obtained from the partial image, along with the cut-out position of the partial image.

Abstract: An exposure apparatus which includes a projection optical system configured to project light from an original onto a substrate and performs an exposure of the substrate to light via a liquid that fills a gap between a final optical element of the projection optical system and the substrate, the apparatus comprises a controller configured so that 1) an exposure condition for the substrate is input to the controller, the exposure condition including a shot area layout and a dose for a shot area, and 2) the controller obtains a contact time during which the shot area is to be kept in contact with the liquid based on the input exposure condition, and corrects the input dose based on the obtained contact time.

Abstract: A method for measuring an optical performance of a projection optical system in an exposure apparatus that exposes a pattern on a reticle onto a substrate includes the steps of determining an pupil area in the projection optical system, scanning a test reticle or a reference plate, imaging a test pattern on the test reticle or the reference plate onto a surface of the substrate via the pupil area in the projection optical system which has been determined by the determining step, and measuring a positional offset between a predetermined position and an image of the test pattern that has been imaged by the imaging step.

Abstract: An exposure apparatus includes a light source for emitting exposure light, a spatial light modulation means for performing spatial light modulation, based on an image signal, on the exposure light, an imaging means for forming an image on a photosensitive material with the exposure light on which spatial light modulation has been performed, and a focus adjustment means for adjusting focus by changing the optical path length of the modulated exposure light when an image is formed on the photosensitive material with the spatially modulated exposure light. The imaging means forms an image with the spatially modulated exposure light only by a substantially rectangular region of the imaging means including the central portion of the imaging means.

Abstract: Provided is an exposure equipment having high resolution even when a reticle is inclined. The exposure equipment includes: an optical system for projecting on a wafer (130), a pattern formed on a surface of a reticle (101); a determining section for determining a tilt angle of the reticle (101) with respect to a plane perpendicular to an optical axis direction of the optical system; and an adjusting section for adjusting a position of the wafer (130) based on the tilt angle determined by the determining section.

Abstract: An exposure apparatus for exposing a bright-dark pattern on a substrate via a projection optical system includes a position detection system which detects a plurality of predetermined positions in a unit exposure field of the substrate. A plurality of reference detection positions fall within a range substantially equal to the unit exposure field. A deformation calculation unit calculates a state of deformation in the unit exposure field based on the detection result of the position detection system. A shape modification unit modifies a shape of the bright-dark pattern to be exposed on the substrate based on the deformation state calculated by the deformation calculation unit.

Abstract: Accurate ultrafine patterns are formed using a multiple exposure technique comprising implementing an OPC procedure to form an exposure reticle to compensate for distortion of an overlying resist pattern caused by an underlying resist pattern. Embodiments include forming a first resist pattern in a first resist layer over a target layer using a first exposure reticle, forming a second exposure reticle by an OPC technique to compensate for distortion of a second resist pattern caused by the underlying first resist pattern, depositing a second resist layer on the first resist pattern, forming the second resist pattern in the second resist layer using the second exposure reticle, the first and second resist patterns constituting a final resist mask, and forming a pattern in the target layer using the final resist mask.

Abstract: A method for determining the lateral correction as a function of the substrate topology and/or the geometry of the substrate holder is disclosed. The substrate is placed on a measuring stage traversable in the X coordinate direction and Y coordinate direction, which carries the substrate to be measured. The substrate is supported on at least three support points which define a plane. An apparatus is provided for determining the position of a plurality of positions on the surface of the substrate in the in the X, Y and Z coordinate directions. The substrate is tiltable about an axis parallel to the X/Y plane, to enable the substrate to be measured in a tilted position.

Abstract: A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass.

Abstract: An exposure apparatus of a semiconductor device may include an exposure light source; an asymmetric adjustment filter for asymmetrically adjusting intensity of a light which passes through the exposure light source; a photomask for passing the light of which intensity is adjusted by the asymmetric adjustment filter; a projection lens for projecting the light passing through the photomask; and a wafer stage for mounting a wafer on which an image is formed by the light from the projection lens.

Abstract: An exposure apparatus includes a first driving mechanism which drives a first optical element, a second driving mechanism which drives a second optical element, and a control unit which controls the first driving mechanism and the second driving mechanism so as to adjust the astigmatism of a projection optical system. The amount of change in the first order component of the astigmatism and the amount of change in the second order component of the astigmatism upon driving the first optical element by the first driving mechanism have a first ratio, and the amount of change in the first order component of the astigmatism and the amount of change in the second order component of the astigmatism upon driving the second optical element by the second driving mechanism have a second ratio which is different from the first ratio.

Abstract: The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and components.

Abstract: A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.

Abstract: A method of measuring aberration present in a lithographic apparatus comprising the following steps. Modulating a radiation beam using a reflective patterning device. Projecting the radiation beam using a projection system. Detecting the projected radiation using a sensor. Measuring aberration via interference in the detected radiation beam. The radiation beam is tilted away from the optical axis of the projection system prior to entering the projection system.