Abstract: Various computer-implemented methods are provided. One method includes determining errors across a field of a lens of a lithography system based on wafer measurements. In addition, the method includes separating the errors into correctable and non-correctable errors across the field. The errors may include dose errors, focus errors, or dose and focus errors. In another embodiment, the method may include determining correction terms for parameter(s) of the lithography system, which if applied to the parameter(s), the correctable errors would be eliminated resulting in approximately optimal imaging performance of the lithography system. Another method includes controlling one or more parameters of features within substantially an entire printed area on a product wafer using a limited number of wafer measurements performed on a test wafer. The wafer measurements may be performed on a first feature type, and the features that are controlled may include a second, different feature type.

Abstract: Methods and systems for generating stereoscopic content with granular control over binocular disparity based on multi-perspective imaging from representations of light fields are provided. A reference image, a three-dimensional (“3D”) representation of a light field corresponding to the reference image, and a goal disparity image that indicates a goal binocular disparity for one or more pixels of the reference image may be received. For each pixel of an output image corresponding to the reference image, a point within the light field that is a closest match for the goal binocular disparity of a corresponding pixel of the goal disparity image may be determined. A stereoscopic image pair including the reference image and the output image may be generated.

Abstract: A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.

Abstract: Methods and systems for generating stereoscopic content with granular control over binocular disparity based on multi-perspective imaging from representations of light fields are provided. The stereoscopic content is computed as piecewise continuous cuts through a representation of a light field, minimizing an energy reflecting prescribed parameters such as depth budget, maximum binocular disparity gradient, desired stereoscopic baseline. The methods and systems may be used for efficient and flexible stereoscopic post-processing, such as reducing excessive binocular disparity while preserving perceived depth or retargeting of already captured scenes to various view settings. Moreover, such methods and systems are highly useful for content creation in the context of multi-view autostereoscopic displays and provide a novel conceptual approach to stereoscopic image processing and post-production.

Abstract: Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer.

Abstract: An exposure apparatus exposes a substrate with exposure light via a liquid. The exposure apparatus includes an optical system including an emission surface from which the exposure light is emitted; a liquid supply port that supplies the liquid in order to fill an optical path of the exposure light emitted from the emission surface with the liquid; and a fluid supply port that supplies a fluid including a material capable of changing the specific resistance of the liquid to at least a part of a space around a liquid immersion space that is formed by the liquid.

Abstract: The disclosure relates to a method for adapting a projection exposure apparatus for microlithography to a mask having structures with different pitches and/or different structure widths in different structure directions. Wavefront aberrations induced by the mask are reduced by a manipulator of the projection exposure apparatus for microlithography.

Abstract: A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.

Abstract: A drawing device draws a pattern on a substrate by radiating light from an optical head part on a target object (for example, substrate) which relatively moves with respect to the optical head part. Here, the optical head part has a spatial modulating unit which spatially modulates light from a light source, based on pattern data, and an optical path corrector which shifts the route of light spatially modulated in the spatial modulating unit at precision subdivided more than units of spatial modulation in the spatial modulating unit (more specifically, for example, units of pixels of spatial light modulator).

Abstract: A misalignment/alignment compensation method for a lithography process includes the steps of: obtaining misalignment data associated with an alignment mark disposed on a substrate; and obtaining a compensation parameter by performing asymmetry compensation calculation on at least one of a first directional component of the misalignment data, which is associated with a first direction, and a second directional component of the misalignment data, which is associated with a second direction.

Abstract: An immersion lithographic apparatus is disclosed that includes a fluid supply system configured to supply a fluid, the fluid supply system having a chamber with a plurality of inlet holes in a first side wall and a plurality of outlet holes in a second side wall, the first side wall facing the second side wall, wherein the inlet holes direct fluid entering the chamber in a direction towards areas of the second side wall between the plurality of outlet holes.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: An adjusting method that adjusts an immersion exposure apparatus that comprises a first holder, which holds a substrate, and a second holder, which holds the substrate before the substrate is held by the first holder, and that exposes the substrate, which is held by the first holder, through a liquid. The adjusting method comprises: holding a thermometer with the first holder; holding the thermometer with the second holder; and adjusting the temperature of at least one of the first holder and the second holder based on the detection result of the thermometer held by the first holder and the detection result of the thermometer held by the second holder.

Abstract: A method is provided for purifying a resin for photolithography wherein, from an insufficiently purified resin (also referred to as “crude resin”), low molecular weight impurities such as an unreacted monomer and a polymerization initiator, which cause a development defect of a resist pattern or deterioration of the storage stability of the resin for photolithography can be removed more effectively. The method for purifying a resin for photolithography includes an operation (a) wherein a slurry in which a resin is dispersed in a solution containing a good solvent and a poor solvent is stirred, and then an operation (b) wherein, to said slurry, a poor solvent is added to lower the ratio of the good solvent to the poor solvent, and then, the resin is separated from the solution.

Abstract: Disclosed is a lithography system. The lithography system includes a radiation source to provide radiation energy for lithography exposure; a substrate stage configured to secure a substrate; an imaging lens module configured to direct the radiation energy onto the substrate; at least one sensor configured to detect a radiation signal directed from the substrate; and a pattern extraction module coupled with the at least one sensor and designed to extract a pattern of the substrate based on the radiation signal.

Abstract: A lithographic apparatus with a cover plate formed separately from a substrate table and means for stabilizing a temperature of the substrate table by controlling the temperature of the cover plate is disclosed. A lithographic apparatus with thermal insulation provided between a cover plate and a substrate table so that the cover plate acts as a thermal shield for the substrate table is disclosed. A lithographic apparatus comprising means to determine a substrate table distortion and improve position control of a substrate by reference to the substrate table distortion is disclosed.

Abstract: An exemplary embodiment of the present invention provides an interference projection exposure system comprising a beam-providing subsystem and an objective lens subsystem that can provide a plurality of light beams which intersect and interfere at an image plane to produce a high spatial frequency periodic optical-intensity distribution. The interference projection system can further comprise a pattern mask that can alter the periodic optical-intensity distribution so as to incorporate functional elements within the periodic optical-intensity distribution. The beam providing subsystem can comprise a beam generating subsystem, a beam conditioning subsystem and a beam directing subsystem. Another exemplary embodiment of the present invention provides for a method of producing a high spatial frequency periodic optical-intensity distribution using a interference projection exposure system.

Abstract: According to example embodiments, a method of operating an exposure apparatus including a stage having a plurality of beam measurement devices, and an exposure head unit having a first set of exposure heads and a second set of exposure heads includes measuring a position of a first exposure head of the first set of exposure heads by moving the stage to coincide a first beam measurement device of the plurality of beam measurement devices with the first exposure head, setting the measured position of the first exposure head as a reference position, and measuring positions of the second set of exposure heads with respect to the reference position.

Abstract: An individual mirror is used to construct a facet mirror. A mirror body of the individual mirror is configured to be tiltable relative to a rigid carrier body about at least one tilting axis of a tilting joint. The tilting joint is configured as a solid-body joint. The solid-body joint, perpendicular to the tilting axis, has a joint thickness S and, along the tilting axis, a joint length L. The following applies: L/S>50. The result is an individual mirror to construct a facet mirror, which can be reproduced and is precisely adjustable and simultaneously ensures adequate heat removal, in particular, heat produced by residually absorbed useful radiation, which is reflected by the individual mirror, by dissipation of the heat by the mirror body.

Abstract: On the +X and ?X sides of a projection unit, a plurality of Y heads are arranged in parallel to the X-axis by a predetermined distance half or less than half the effective width of the scale, so that two heads each constantly form a pair and face a pair of Y scales. Similarly, on the +Y and ?Y sides of the projection unit, a plurality of X heads are arranged in parallel to the Y-axis by the predetermined distance described above, so that two heads each constantly form a pair and face a pair of X scales. Of the pair of heads consisting of two heads which simultaneously face the scale, measurement values of a priority head is used, and when abnormality occurs in the measurement values of the priority head due to malfunction of the head, measurement values of the other head is used. Then, by using the measurement values of the two pairs of Y heads and the pair of X heads, a position of a stage within a two-dimensional plane is measured in a stable manner and with high precision.

Abstract: An immersion lithographic apparatus is provided having a table configured to support a substrate; a sensor or target for a sensor is provided on a surface of the table and a cover is provided extending from an edge of the table; in addition, a liquid displacement device is provided including a gas outlet configured to direct a localized gas flow towards the sensor or target so as to displace liquid from the sensor or target over the cover and off the table.

Abstract: An immersion lithographic projection apparatus having a megasonic transducer configured to clean a surface and a method of using megasonic waves through a liquid to clean a surface of an immersion lithographic projection apparatus are disclosed. A flow, desirably a radial flow, is induced in the liquid.

Abstract: A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement (65) that directs a first beam of radiation onto a focusing arrangement, to be detected by a focus sensor arrangement (61). A focus controller (67) provides control signals representative of the relative positions of the focusing arrangement (15, 69) and the substrate (W), which are required to focus the first beam of radiation on the substrate. An actuator arrangement adjusts the position of the focusing arrangement dependent on the control signals. An irradiation arrangement directs a second beam of radiation onto the substrate using the focusing arrangement, a measurement detector (18) detecting the second radiation beam after reflection from the substrate. A focus offset arrangement adjusts the focus produced by the focusing arrangement to compensate for an offset between the focusing of the first beam of radiation and the second beam of radiation.

Abstract: An apparatus and method for measuring thermo-mechanically induced reticle distortion or other distortion in a lithography device enables detecting distortion at the nanometer level in situ. The techniques described use relatively simple optical detectors and data acquisition electronics that are capable of monitoring the distortion in real time, during operation of the lithography equipment. Time-varying anisotropic distortion of a reticle can be measured by directing slit patterns of light having different orientations to the reticle and detecting reflected, transmitted or diffracted light from the reticle. In one example, corresponding segments of successive time measurements of secondary light signals are compared as the reticle scans a substrate at a reticle stage speed of about 1 m/s to detect temporal offsets and other features that correspond to spatial distortion.

Abstract: The invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, apparatus comprising: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein patterning device has a main imaging field, and a perimeter and apparatus is operable to model higher-order distortions using signals resultant from alignment structures comprised in perimeter and/or in the imaging field.

Abstract: A lithographic projection apparatus is disclosed that comprises a substrate table, a projection system, a liquid confinement structure and a thermal measurement system. The substrate table is configured to support a substrate. The projection system is configured to direct a patterned beam of radiation on to a target portion of the substrate. The liquid confinement structure is configured to at least partly confine an immersion liquid to a space between the projection system and the substrate, the substrate table, or both. The thermal measurement system comprises a thermally sensitive coating. The thermal measurement system is configured to detect the temperature of the immersion liquid in contact with the coating. Also disclosed is a thermal measurement system, a metrology system comprising the thermal measurement system and a dummy wafer for the thermal measurement system.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: A lithographic method, among things is disclosed. The method includes using information at least indicative of a desired shape or size of a constituent part of a device to implement the desired shape or size of the constituent part of the device, the desired shape or size being related to a measured property of a layer of material in which the constituent part of the device is to be created, at least a part of the implementation comprising determining a configuration of a plurality of individually controllable elements that would be necessary to create in a radiation beam a pattern which is sufficient to implement the desired shape or size of the constituent part of the device when creating the constituent part of the device.

Abstract: Improved low k1 lithographic imaging is disclosed by optimizing or improving an illumination polarization condition. The polarization condition may be a pre-defined spatially varying polarization, or a spatially customized local polarization of bright illumination points based on tracking a value of a desired lithographic response. Several non-traditional polarization conditions, e.g., TM/TE polarization (with or without a central TM region), diagonal polarization, and Y+X polarization (typically for dark field illumination) are disclosed, that offer substantial imaging advantages for specific lithographic problems, especially at low k1 values. The initial polarization definition may be limited to specific fixed polarization angles.

Abstract: A detector to measure a property of radiation is disclosed. The detector comprises first and second luminescent uniaxial crystals each having an optic axis, the optic axis of the first uniaxial crystal being arranged such that it is substantially perpendicular to the optic axis of the second uniaxial crystal.

Abstract: An exposure apparatus which includes a plurality of units to be temperature-regulated, and transfers a pattern of a reticle onto a substrate while activating the plurality of units is disclosed. The exposure apparatus comprising a plurality of flow passages which run parallel to each other and through which a fluid to temperature-regulate the plurality of units flows, a bypass line which runs parallel to the plurality of flow passages so as to bypass the plurality of flow passages, and a flow rate controller configured to control a flow rate of fluid flowing through the bypass line, so that a total flow rate of the fluid flowing through the plurality of flow passages and the bypass line becomes a target flow rate.

Abstract: A lithographic projection apparatus is disclosed where at least part of a space between a projection system of the apparatus and a substrate is filled with a liquid by a liquid supply system. The projection system is separated into two separate physical parts. With substantially no direct connection between the two parts of the projection system, vibrations induced in a first of the two parts by coupling of forces through the liquid filling the space when the substrate moves relative to the liquid supply system affects substantially only the first part of the projection system and not the other second part.

Abstract: An exposure apparatus projects an image of a pattern formed on a mask onto a substrate through a projection optical system. The exposure apparatus includes: a prediction unit configured to predict an imaging characteristic fluctuation of the projection optical system which is caused by thermal action due to exposure, by using a model formula modeling the imaging characteristic fluctuation; and a correction unit configured to correct the imaging characteristic based on a prediction result obtained by the prediction unit. The model formula includes a composition of a plurality of functions modeling the imaging characteristic fluctuation and indicating a time dependency, each of the plurality of functions having an exposure-angle-of-view dependency and the exposure-angle-of-view dependencies of the plurality of functions being different from each other.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: A method controls scanning function of a lithographic apparatus. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Compensation is performed based on the determination. A different parameterization is used for control of the scanning control module than for communication between the scanning control module and the lithographic apparatus.

Abstract: A lithographic apparatus includes a patterning subsystem for transferring a pattern from a patterning device onto a substrate controlled in accordance with recorded measurements of level variations across a surface of the substrate. A level sensor is provided for projecting a level sensing beam of radiation to reflect from a location on the substrate surface and for detecting the reflected sensing beam to record the surface level at said location. The level sensor incorporates at least one moving optical element to scan the substrate surface by optical movement in at least one dimension to obtain measurements of surface level at different locations without mechanical movement between the level sensor and the substrate. Optical path length equalization measures may be employed, using shaped reflectors and/or additional moving mirrors, to avoid focus variation during the scan.

Abstract: According to one embodiment, an exposure apparatus includes a light blocking unit that blocks an exposure light reflected on a reflective mask at a part other than an aperture; a detection unit that measures a light intensity of the exposure light passed through the light blocking unit; and a calculation unit that calculates, based on the light intensity, a transfer characteristic when a pattern on the reflective mask is transferred to a substrate. In the light blocking unit, a position on an aperture plane and a position in an optical axis direction of the exposure light are adjusted. The calculation unit calculates the transfer characteristic based on the position in the optical axis direction in which the light intensity is maximized.

Abstract: A microlithographic apparatus comprises an optical wavefront manipulator. The latter includes an optical element and a gas-tight cavity that is partly confined by the optical element or contains it. A gas inlet device directs a gas jet towards the optical element. The location, where the gas jet impinges on the optical element after it has passed through the cavity, is variable in response to a control signal supplied by a control unit. A gas outlet is in fluid connection with the vacuum pump so that, upon operation of the vacuum pump, the pressure within the cavity is less than 10 mbar even if the gas jet passes through the cavity.

Abstract: A lithographic apparatus can include the following devices: a patterning system, a projection system, and a radiation beam inspection device. The patterning system can be configured to provide a patterned radiation beam. The projection system can be configured to project the patterned radiation beam onto a target portion of a substrate. Further, the radiation beam inspection device can be configured to inspect at least a part of the patterned radiation beam. In a substrate exposure position, the projection system is configured to expose a pattern of radiation on the substrate using the patterned radiation beam and the radiation beam device is configured to move the reflecting device away from a light path of the patterned radiation beam. In a radiation beam inspection position, the radiation beam inspection device is configured to move the reflecting device into the light path of the patterned radiation beam.

Abstract: An exposure apparatus for forming a predetermined pattern on a substrate by using exposure light, includes a stage apparatus which is movable with respect to an optical axis of the exposure light; a light-transmissive member provided at the stage apparatus, wherein a liquid is supplied on an upper surface of the light-transmissive member; and a measurement device which is settable below the light-transmissive member when measurement using the measurement device is performed. Leakage or entrance of a liquid used for exposure into an optical measurement device such as a wavefront aberration measurement device can be prevented, thereby enabling preferable optical adjustment such as imaging performance or optical characteristics.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the device being capable of imparting the beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a stage system to position the table relative to a reference structure; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; an optical measurement system including a sensor part and an optical part, the optical part being configured to optically interact with the patterned radiation beam and to transmit a result from the interaction as output to the sensor part, wherein the optical part is arranged on the table, and the sensor part is arranged on the stage system or the reference structure.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system configured to project the patterned radiation beam onto a target portion of the substrate, a chuck configured to hold and position an object, for example, the patterning device onto the support or the substrate onto the substrate table, the chuck including a base and a constraining layer. A damping layer including a viscoelastic material is provided between the base and the constraining layer.

Abstract: A microlithography projection objective includes an optical element, a manipulator configured to manipulate the optical element, and a control unit configured to control the manipulator. The control unit includes a first device configured to control movement of the manipulator, a memory comprising an upper bound for a range of movement of the manipulator, and a second device configured to generate a merit function based on a square of a root mean square (RMS) of at least one error and configured to minimize the merit function subordinate to the upper bound for the range of movement of the manipulator.

Abstract: A lithographic apparatus includes a support to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus includes a projection transfer measurement system to measure an optical projection transfer information of the projection system. The projection transfer measurement arrangement includes: an optical device to direct a measurement beam into the projection system during a scanning movement, a detector to detect the measurement beam having passed through the projection system during the scanning movement, and a measurement processor to determine the optical projection transfer information from the detected measurement beam.

Abstract: A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LPA, LPB) for exposure field regions (EFA, EFB) in accordance with surface level measurements (LSA, LSB) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EFA, EFB) with focus offsets (FO1, FO2) defined with reference to the respective focus settings (LPA, LPB) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO1, FO2). The calibration uses surface level measurements (e.g., LSB(3)) having a level sensing location (e.g.

Abstract: A lithography method is proposed employing a projection exposure system having a catoptric imaging optics comprising a mirror formed as phase mask in the imaging beam path, wherein the mirror formed as phase mask exhibits continuous regions having dielectric layers provided thereon. Optionally, the regions of the mirror formed as phase mask are configured such that an axial extension of an image of a point (DOF) of the imaging is increased or/and a lateral extension of an image of a point of the imaging is decreased. Preferably multiple exposures of a same radiation sensitive substrate are performed in order to achieve an increase in resolution and scaling down of the manufacturing trace structures (61, 61?), respectively.

Abstract: A projection objective, such as for EUV lithography, for imaging a pattern arranged in an object plane into an image plane with the aid of electromagnetic radiation from the extreme ultraviolet range is provided. The projection objective includes a plurality of mirrors provided with reflective coatings and arranged between the object plane and the image plane. At least one of the mirrors includes a graded reflective coating with a rotationally-asymmetric coating thickness profile in the mirror plane on a substrate with a rotationally-asymmetric or rotationally-symmetric surface profile. The projection objective can exhibit increased overall transmission.

Abstract: The present invention provides a lithography apparatus which forms a pattern on a substrate, the apparatus including a first dosing device configured to apply a first dose to the substrate based on data corresponding to the pattern, an acquiring device configured to acquire information of an error of a dimension of a pattern formed on the substrate via application of the first dose thereto, and a second dosing device configured to apply a second dose to the substrate based on the acquired information.

Abstract: An exposure apparatus is provided with a nozzle member that has at least one of a supply outlet which supplies the liquid and a collection inlet which recovers the liquid. By immersing the nozzle member in cleaning liquid LK stored in container, the nozzle member is cleaned.

Abstract: A method for improving alignment in a photolithography machine is provided. The method comprises identifying first empirical alignment data that has been determined from use of a target photomask within at least one non-target tool, and identifying second empirical alignment data that has been determined from use of a non-target photomask within a target tool. The method continues by identifying third empirical alignment data that has been determined from use of a non-target photomask within at least one non-target tool, and calculating from the first, second, and third empirical alignment data a predicted alignment data for the target photomask with the target tool. The method then proceeds by aligning the target photomask within the target tool using the predicted alignment data, exposing a pattern from the target photomask onto the wafer in the target tool, and further processing the exposed wafer.