Abstract: A holding device for an optical element in an objective has a mount that is connected to the objective, on the one hand, and at least indirectly to the optical element, on the other hand. Arranged between the mount and the optical element is a reinforcing element whose coefficient of thermal expansion corresponds substantially to the coefficient of thermal expansion of the optical element.

Abstract: A system for generating periodic or quasi-periodic patterns on a sample by means of an interference lithography technique includes a photon source, a mask and a sample holder. The mask has a grating for generating a predetermined pattern, wherein the mask is positioned at a first distance from the photon source. The sample holder is disposed at a second distance from the mask on a side facing away from the photon source. The second distance is selected to be where an intensity distribution is substantially stationary and distance-invariant, or the second distance is varied to obtain a desired average intensity distribution on the sample surface.

Abstract: Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape.

Abstract: A lithographic apparatus is disclosed that includes an encoder type sensor system configured to measure a position of a substrate table of the lithographic apparatus relative to a reference structure. The encoder type sensor system includes an encoder sensor head and an encoder sensor target and the lithographic apparatus comprises a recess to accommodate the encoder sensor target.

Abstract: A programmable illuminator for a photolithography system includes a light source, a first optical system having a light uniformizing element, a programmable micro-mirror device, and a second optical system that forms an illumination field that illuminates a reticle. The programmable micro-mirror device can be configured to perform shutter and edge-exposure-blocking functions that have previously required relatively large mechanical devices. Methods of improving illumination field uniformity using the programmable illuminator are also disclosed.

Abstract: A position detector (16), configured to detect a position of a mark on an object to be detected, comprises an image pickup unit (34), an optical system, a noise obtaining unit (36) and a correction unit (38). The image pickup unit picks up an image of the object to be detected. The optical system forms an image of the object to be detected on an image pickup surface of the image pickup unit. The noise obtaining unit obtains noise information by picking up an image of a region other than the mark using the optical system and the image pickup unit in accordance with the result of adjustment of an optical member included in the optical system. The correction unit corrects, using the noise information obtained by the noise obtaining unit, the image of the mark obtained using the optical system and the image pickup unit.

Abstract: An apparatus which projects a pattern of an original onto a substrate by a projection optical system within a chamber to expose the substrate, comprises a measurement unit which performs measurement to calculate a deformation amount of the original, and a controller which calculates a predicted deformation amount of the original and corrects a projection magnification of the projection optical system so as to correct the predicted deformation amount, based on information representing a relationship between the deformation amount with reference to a shape of the original at a certain temperature and a time for which the original receives exposure light, a deformation amount of the original before exposure determined based on a measurement value obtained by measuring, by the measurement unit, the deformation amount of the original loaded into the chamber and unused for exposure, and the time for which the original receives the exposure light.

Abstract: A method for controlling a vibrating optical element of a lithographic system the optical element having a predetermined number of degrees of freedom comprises: detecting a number of displacements of the optical element, each displacement corresponding to a degree of freedom, wherein the number of detected displacements is larger than the number of degrees of freedom; for each displacement according to a degree of freedom, generating a sensor signal corresponding to a movement in a degree of freedom; wherein the optical element moves as a function of a rigid body transformation matrix, the optical element movement including a first type of movement and a second type of movement; and modifying the sensor signals as a function of a modified transformation matrix, wherein the modified transformation matrix at least partially reduces at least one eigen mode or resonance of one of the first type of movements or the second type of movements.

Abstract: Provided is an exposure method that includes setting a first exposure condition so as to calculate a coefficient for predicting the fluctuation in the imaging characteristics of the projection optical system under a certain exposure condition; determining the coefficient and a permissible value calculated from aberration measurement reproducibility based on a fluctuation characteristic model; calculating a predicted amount of the fluctuation in the imaging characteristics under the first exposure condition based on the coefficient; determining whether or not the predicted amount is less than the permissible value for each time instant; and starting calculation of the predicted amount of the fluctuation in the imaging characteristics under a second exposure condition at the time at which it is determined by the determining that the predicted amount is less than the permissible value.

Abstract: A method for configuring an illumination source of a lithographic apparatus, the method including dividing the illumination source into pixel groups, each pixel group including one or more illumination source points; selecting an illumination shape to expose a pattern, the illumination shape formed with at least one pixel group; ranking the pixel groups according to how a change in state of a pixel group affects a lithographic metric; and for each pixel group in order of ranking, determining whether to adjust the illumination shape by changing the state of the pixel group based on a calculation of the lithographic metric as a result of a change in state of the pixel group.

Abstract: A system includes a plurality of optical elements, a deformation unit configured to deform a deformable optical element satisfying a following conditional formula included in the plurality of optical elements by applying a force to the deformable optical element: 0.75<EA/EA0<0.95 where EA0 represents an effective aperture of each of the plurality of optical elements and EA represents an axial light flux diameter of each of the plurality of optical elements, and a control unit configured to control the deformation unit, wherein n positions on an outer circumference of the deformable optical element are fixed, the deformation unit includes n actuators, the n actuators apply forces to n positions on the outer circumference other than the fixed n positions, and the control unit controls each of the n actuators independently.

Abstract: A method and apparatus for determining the state of the lens transmittance of an optical projection system are described. A lens or imaging objective transmission is determined as a function of exit pupil transverse direction cosine (nx,ny) at multiple field points thereby providing a more complete analysis and correction of a photolithographic exposure system. The entrance pupil of a projection imaging system is uniformly illuminated and the angular dependence of transmission through the imaging system as a function of exit pupil direction cosines is determined. The illumination source includes a light conditioner with an in-situ illumination structure (ISIS), which is an optical structure that can provide uniform illumination of the system's entrance pupil.

Abstract: In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract: An EUV exposure apparatus according to embodiments includes a reticle stage which suctions a rear surface side of an EUV mask to retain the EUV mask. In addition, the EUV exposure apparatus includes a detection unit which detects a position of a measurement mark formed on the rear surface of the EUV mask in the state where the EUV mask is suctioned on the reticle stage. In addition, the EUV exposure apparatus includes a control unit which calculates a distortion amount of the EUV mask based on the position of the measurement mark and performs exposure control on a wafer while correcting the distortion amount.

Abstract: A Wynn-Dyson imaging system with reduced thermal distortion is disclosed, wherein the reticle and wafer prisms are made of glass material having a coefficient of thermal expansion of no greater than about 100 ppb/° C. The system also includes a first IR-blocking window disposed between the reticle and the reticle prism, and a second matching window disposed between the wafer and the wafer prism to maintain imaging symmetry. The IR-blocking window substantially blocks convective and radiative heat from reaching the reticle prism, thereby reducing the amount of thermally induced image distortion in the reticle image formed on the wafer.

Abstract: A projection exposure apparatus for microlithography includes: an illumination system configured to illuminate a mask in an object field with exposure light; and a projection objective comprising multiple optical elements configured to image the exposure light from the mask in the object field to a wafer in an image field. The projection exposure apparatus is a wafer scanner configured to move the wafer relative to the mask during an exposure of the wafer with the exposure light. The projection objective further includes at least one manipulator configured to manipulate at least one of the optical elements and a control unit configured to control the manipulator. The control unit is configured to manipulate the optical element with the manipulator during the exposure of the wafer with the exposure light.

Abstract: A projection optical system of the present invention includes an optical element group that includes optical elements, and a controller that drives at least one of the first optical elements. The optical element group includes aspheric surfaces having a complementary relationship with each other and are arranged so that the aspheric surfaces face each other. The controller changes a relative position between the optical elements in a first direction and a second direction orthogonal to the first direction to control optical performances of the projection optical system corresponding to each of the first direction and the second direction.

Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Abstract: An exposure apparatus includes an original stage including a first mark, a substrate stage including a second mark and a photoelectric conversion device configured to detect light having passed through the second mark, a projection optical system, a measurement device configured to measure a position of at least one stage of the substrate stage and the original stage, and a controller configured to detect a positional relationship between the first mark and the second mark based on a signal output from the photoelectric conversion device and a measurement result output from the measurement device, wherein the controller cyclically samples a measurement result output from the measurement device, corrects the measurement result based on a time interval between a light emission timing of the pulsed light source and a sampling timing of the measurement result.

Abstract: A lithographic apparatus is disclosed that includes an encoder type sensor system configured to measure a position of a substrate table of the lithographic apparatus relative to a reference structure. The encoder type sensor system includes an encoder sensor head and an encoder sensor target and the lithographic apparatus comprises a recess to accommodate the encoder sensor target.

Abstract: A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure.

Abstract: An apparatus includes original positioning mechanism which positions original stage, substrate positioning mechanism which positions substrate stage, measurement device mounted on the substrate stage, and controller. One of original and the original stage is provided with first measurement pattern including patterns, at least one of pitches and widths thereof being different from each other. The measurement device includes second measurement pattern, and sensor configured to detect light passed through the first and second measurement patterns, and a projection optical system. The controller determines illuminated region, within which the first measurement pattern is to be illuminated, using information related to the original, and obtains information related to an image of the first measurement pattern within the illuminated region based on an output from the sensor.

Abstract: A device has a scale on which a grating pattern is formed, a light source to irradiate light on the scale, a wavelength plate to transform multiple diffracted lights from the light source into circular polarized light, respectively, an optical element to superposition and cause interference of the multiple diffracted lights, and a photodetector to receive the interfered light. Also, a generating unit to generate linearly polarized light by the light from the light source, so that the multiple diffracted lights input to the wavelength plate become linearly polarized light with a same mutual polarization direction.

Abstract: An EUV radiation source comprising a fuel supply configured to deliver droplets of fuel to a plasma formation location, and a collector configured to collect EUV radiation emitted by a plasma at the plasma formation location, wherein the collector has a reflective surface that is a modified ellipsoid shape, the modified ellipsoid shape providing improved intensity uniformity of collected EUV radiation in the far field compared with a perfect ellipsoid shape.

Abstract: An illumination system for a microlithographic projection exposure step-and-scan apparatus has a light source, a first optical raster element and a second optical raster element. The first optical raster element extends in a first pupil plane of the illumination system and is designed such that the geometrical optical flux of the system is increased perpendicular to a scan direction of the projection exposure apparatus. The second optical raster element extends in a second pupil plane of the illumination system, which is not necessarily different from the first pupil plane, and is designed such that the geometrical optical flux of the system is increased in the scan direction and perpendicular thereto. This makes it possible to improve the irradiance uniformity in a reticle plane.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a driving unit configured to drive a plurality of optical elements which form the projection optical system so as to adjust an imaging state of light which passes through the projection optical system, a detecting unit configured to detect a driving error when the driving unit drives a first optical element of the plurality of optical elements, and a control unit configured to control the driving unit to drive a second optical element different from the first optical element of the plurality of optical elements so as to reduce a change in the imaging state of the light which passes through the projection optical system due to the driving error.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The projection system is mounted on a reference structure of the lithographic apparatus by a mount of the lithographic apparatus. The mount includes a first piezoelectric element to exert a force on the projection system, a second piezoelectric element to measure the force, and an interconnection member interposed between the first and second piezoelectric elements, the interconnection member comprising a cut.

Abstract: An immersion lithography apparatus comprises a temperature controller configured to adjust a temperature of a projection system, a substrate and a liquid towards a common target temperature. Controlling the temperature of these elements and reducing temperature gradients may improve imaging consistency and general lithographic performance. Measures to control the temperature may include controlling the immersion liquid flow rate and liquid temperature, for example, via a feedback circuit.

Abstract: A method for determining an illumination source with optimized depth of focus includes the following steps. First, a simulated optimal correlation and a simulated defocus correlation of each illumination source are provided. Second, an optimal peak is determined, a defocus peak is determined, and an optimal correlation slope and a defocus correlation slope are determined. An optimal correlation ratio and a peak variation are calculated. A correlation variation is calculated from the optimal correlation ratio and the defocus correlation ratio. Next, a weighted variation is determined from the peak variation and the correlation variation. An illumination source of a lowest weighted variation among a plurality of the illumination sources is determined to be an illumination source with optimized depth of focus.

Abstract: A method of measuring aberration present in a lithographic apparatus comprising the following steps. Modulating a radiation beam using a reflective patterning device. Projecting the radiation beam using a projection system. Detecting the projected radiation using a sensor. Measuring aberration via interference in the detected radiation beam. The radiation beam is tilted away from the optical axis of the projection system prior to entering the projection system.

Abstract: A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.

Abstract: A lithographic apparatus is disclosed that includes an encoder type sensor system configured to measure a position of a substrate table of the lithographic apparatus relative to a reference structure. The encoder type sensor system includes an encoder sensor head and an encoder sensor target and the lithographic apparatus comprises a recess to accommodate the encoder sensor target.

Abstract: An immersion lithographic apparatus is disclosed that includes a fluid confinement system configured to confine fluid to a space between a projection system and a substrate. The fluid confinement system includes a fluid inlet to supply fluid, the fluid inlet connected to an inlet port and an outlet port. The immersion lithographic apparatus further includes a fluid supply system configured to control fluid flow through the fluid inlet by varying the flow rate of fluid provided to the inlet port and the flow rate of fluid removed from the outlet port.

Abstract: An exposure apparatus includes a nozzle member which has at least one of a supply port for supplying a liquid and a recovery port for recovering the liquid, and a nozzle adjusting mechanism which adjusts at least one of a position and a posture of the nozzle member depending on a position or a posture of a substrate. The exposure apparatus forms an immersion area of the liquid on the substrate, and performs exposure for the substrate through the liquid in the immersion area. Accordingly, the liquid is satisfactorily retained between the projection optical system and the substrate, thereby making it possible to realize the exposure highly accurately.

Abstract: According to one embodiment, a pattern formation method includes placing a master on a substrate including a concave-convex pattern, performing alignment between the master and the substrate, curing a photosensitive resin applied onto the substrate, with the pattern brought into contact with the resin, and removing the master from the resin. The performing alignment includes measuring amount of misalignment of first marks provided at least three of four corners of the shot region and performing alignment of the corners, after the alignment of the corners, measuring misalignment of a second mark, calculating a target value of amount of movement of the corners so as to minimize the amount of misalignment of the first marks and amount of misalignment of the second mark, and performing alignment between the master and the substrate so that the amount of movement of the corners is made close to the value.

Abstract: Disclosed herein is a mask-less exposure apparatus to enlarge or reduce an exposure area in a scan direction and a control method thereof. The mask-less exposure apparatus includes a light source unit configured to supply light, a spatial light modulation unit configured to selectively transmit the light to a substrate, a drive pulse generation unit configured to generate a drive pulse signal and adjust an operation beginning time of the spatial light modulation unit, a substrate shape measurement unit configured to measure a scan-direction length of the substrate, and a drive pulse correction unit configured to correct a drive pulse signal interval so as to enlarge or reduce an exposure area of the substrate according to the scan-direction length of the substrate.

Abstract: An exposure apparatus comprises a measurement system which measures an aberration of a projection optical system. The measurement system includes a first pattern positioned on an original stage, a second pattern positioned on a substrate stage, a third pattern positioned on the original stage to align the first and second patterns, a fourth pattern positioned on the substrate stage to align the first and second patterns, a detection system which detects a relative position between the third pattern and the fourth pattern, and a controller which controls at least one of the stages to align the first pattern positioned at a position spaced apart from the third pattern by a predetermined distance, and the second pattern positioned at a position spaced apart from the fourth pattern by a predetermined distance, based on the relative position between the third pattern and the fourth pattern detected by the detection system.

Abstract: The disclosure relates to an optical system, such as a projection exposure apparatus for semiconductor lithography, including a manipulable correction arrangement for reducing image aberrations. In some embodiments, the system includes at least one manipulator configured to reduce image aberrations. The manipulator can include at least one optical element which can be manipulated by at least one actuator. The manipulator can be formed in changeable fashion together with an actuator.

Abstract: The technology disclosed relates to methods and devices that compensate for displacements in a pattern or deformations of a workpiece. In particular, this relates to using timing to compensate for displacements along a first axis along the scanning direction while using resampling, interpolation or a similar method to compensate for displacements along a second axis that is substantially orthogonal to the first axis. The scanning direction may be an actual direction of movement of the scanning head or it may be a direction perpendicular to an orientation of an image projected onto a workpiece.

Abstract: Pattern images are projected under various conditions of liquid prior to exposing a substrate, and exposure conditions for exposing a pattern image on the substrate is determined based on each projection condition of the pattern images. When a pattern image is projected through liquid, a substrate can be excellently exposed in a desired exposure condition according to the condition of the liquid.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: A method for illuminating printing plates in which the light from a light source is imaged on a two-dimensional light modulator having a plurality of rows of light-modulated cells, and the light is modulated thereby, whereupon the light modulator is imaged on light-sensitive material via an imaging beam path, wherein the light-sensitive material is moved relative to the light modulator substantially perpendicularly to the direction of the rows of light-modulated cells at a relative speed and wherein the data pattern to be imaged on the light-sensitive material is displayed beginning in the first row of the light modulator in each row consecutively during an exposure time (T, T?) and then moved to the subsequent row of the light modulator. In order to improve the method, the image of the data pattern is held substantially stationary relative to the light-sensitive material during the exposure time (T, T?).

Abstract: An immersion liquid confinement apparatus recovers an immersion liquid from an immersion area that includes a gap between a projection system and an object of exposure in an immersion lithography system. The apparatus includes a confinement member that includes an outlet and an aperture through which a patterned image is projected onto the object. A first liquid-permeable member covers the outlet and has a first surface that faces the object and a second surface opposite the first surface, the second surface contacting a first chamber. A second liquid-permeable member has first and second oppositely-facing surfaces, the first surface of the second liquid-permeable member contacts the first chamber, the second surface of the second liquid-permeable member contacts a second chamber that is different from the first chamber. A hydrophobic porous member is provided between the first chamber and a vacuum system that supplies a low pressure to the first chamber.

Abstract: An exposure apparatus the present invention comprises: an illumination optical system configured to illuminate an illumination area on an original with light from a light source; a projection optical system configured to project a pattern of the original onto a substrate; a first stage configured to hold the original; a second stage configured to hold the substrate; and a controller configured to control driving of at least one of the first stage, the second stage, and an optical element which forms the projection optical system so as to reduce variations in imaging characteristics of the projection optical system, based on a dependence of a transmittance of the pattern on a position in the illumination area.

Abstract: The subject matter disclosed herein relates to determining a lithographic set point using simulations of optical proximity correction verification. In one embodiment, a computer-implemented method of determining a lithographic tool set point for a lithographic process is disclosed. The method may include: providing a model of a production lithographic process including simulations of printed shapes; analyzing the model of the production lithographic process to determine whether a set of structures on a production mask used in the production lithographic process to create the printed shapes will fail under a plurality of set points; determining an operating region of set points where the set of structures on the production mask does not fail; and establishing a set point location within the operating region based upon a set point selection function.

Abstract: Disclosed herein is a method of compensating for distortion of an exposure pattern due to stage yawing in a maskless exposure apparatus using digital micromirror devices (DMDs). Requirements as to control performance of the stage yawing through the adjustment of sync signals (PEGs) to switch frames of the DMDs are eliminated, thereby reducing manufacturing costs of a large-sized stage. Also, distortion of an exposure pattern, which may occur due to uncompensated yawing, is digitally compensated by controlling the stage yawing, thereby achieving high-quality exposure.

Abstract: A method for measuring distortion of a projection objective, which includes: obtaining a plurality of first positional deviations between two groups of patterns formed respectively after two exposures performed in a same exposure field during a stepping and exposing process of the reticle stage (S21); obtaining a plurality of second positional deviations between two groups of patterns formed respectively after another two exposures performed in a same exposure field during a stepping and exposing process of the workpiece stage (S22); subtracting motional errors of the reticle stage and/or workpiece stage from each of the plurality of first and second positional deviations to obtain corresponding first and second corrected deviations (S43, S44); calculating differences each between a pair of corrected deviations (S45); and calculating the distortion of the projection objective by a fitting process (S46).

Abstract: An imaging optical system has a plurality of mirrors, which via a beam path for imaging light, image an object field in an object plane into an image field in an image plane. The imaging optical system has an exit pupil obscuration. At least one of the mirrors has no opening for passage of the imaging light. The fourth to last mirror in the beam path is concave, resulting in an imaging optical system having improved imaging properties without compromise in throughput.

Abstract: For the use in illumination systems and projection exposure apparatuses for UV or EUV lithography, a reflective optical element is provided for a operating wavelength in the ultraviolet to extreme ultraviolet wavelength ranges. The reflective optical element includes a substrate and a reflective surface on the substrate. The multilayer system has layers of at least two alternating materials having different real parts of the refractive index at the operating wavelength. Radiation in the operating wavelength of a certain incident angle bandwidth distribution can impinge on the reflective optical element. The reflective surface includes one or more first portions, in which the layers have alternating materials of a first period thickness. The reflective surface includes one or more additional portions, in which the layers of alternating materials have a first period thickness and at least one additional period thickness.