Abstract: In the case where the previous process (X) and the previous process (Y) are different in step 310, only a distortion amount in an X-axis direction is extracted from image distortion data of the previous process (X) in Step 316 and only a distortion amount in a Y-axis direction is extracted from image distortion data of the previous process (Y) in Step 318, and then in Step 320, image distortion data is created by synthesizing the extracted distortion amounts, and the synthesized image distortion data is used for subsequent adjustment of projected images. With this operation, the distortion of projected images can be adjusted per axis and accordingly overlay exposure with high accuracy can be realized.

Abstract: A pattern image generation device generates a pattern image, and at least a part of the pattern image which has been generated or the pattern image which is generated and is formed on an object is photoelectrically detected by a detection system. Then, a correction device corrects design data that should be input to the pattern image generation device based on the detection results. Accordingly, a pattern image is generated on an object by the pattern image generation device corresponding to the input of the design data after the correction, and because the object is exposed using the pattern image, a desired pattern is formed on the object with good precision.

Abstract: In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.

Abstract: In some embodiments, the disclosure provides a system that includes an optical element group including a plurality of optical elements configured to project a pattern of an object in an object plane to an image plane. The system also includes a unit configured to detect an image selected from an image of at least part of the projection the pattern of the object, and an image of a measurement element arranged in the area of the object. The image is created via at least some of the optical elements in the optical element group. The unit is configured to determine an imaging error in the projection of the pattern of the object from the object plane to the image plane. The device is configured to be used in microlithography.

Abstract: Illumination optics for EUV microlithography guide an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension and a shorter field dimension, where the ratio is considerably greater than 1.

Abstract: Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.

Abstract: A method for configuring an illumination source of a lithographic apparatus is presented. The method includes dividing the illumination source into pixel groups, each pixel group including one or more illumination source points; selecting an illumination shape to expose a pattern, the illumination shape formed with at least one pixel group; iteratively calculating a lithographic metric as a result of a change of state of a pixel group in the illumination source, the change of the state of the pixel group creating a modified illumination shape; and adjusting the illumination shape based on the iterative results of calculations.

Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.

Abstract: A system for making flexible circuit films includes an inelastic conveyor, a web handling apparatus configured to pass a flexible substrate around the inelastic conveyor, an image acquisition apparatus configured to measure positions of a first set of alignment marks on the flexible substrate at a first conveyor location, an exposure apparatus configured to patternwise expose a photosensitive material on the flexible substrate at a second conveyor location, and an image processor configured to receive the measured positions of the first set of alignment marks, and to compare the measured positions with reference positions of the first set of alignment marks. The exposure apparatus is configured to patternwise expose the photosensitive material based on the comparison between the measured positions and the reference positions.

Abstract: Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.

Abstract: The present invention provides an exposure apparatus including a map obtaining unit configured to obtain a pupil aberration map representing saturation values of fluctuations in each of optical characteristics generated in a plurality of regions, which are obtained by dividing a pupil plane of a projection optical system, upon irradiating the plurality of regions with a unit amount of light, a distribution obtaining unit configured to obtain a light intensity distribution formed on the pupil plane of the projection optical system upon illuminating a pattern of an arbitrary reticle in an arbitrary illumination mode, and a calculation unit configured to calculate a saturation value of a fluctuation in each of the optical characteristics generated in the projection optical system upon illuminating the pattern of the arbitrary reticle in the arbitrary illumination mode, based on the obtained pupil aberration map and the obtained light intensity distribution.

Abstract: In a first process, a process A, an actually measured transfer position measured by a measurement/inspection instrument is indicated by a black circle. A targeted transfer position indicated by x in a process B is located at the same position as the black circle. Assuming that the weights in the subsequent processes are the same, a targeted transfer position Xtarget indicated by x in processes C, D and E is located at a moderate position with which the total deviation from an actual transfer position (black circle) measured by the measurement/inspection instrument in a process preceding the current process is minimized, that is, at a proper position with respect to a plurality of other processes. Accordingly, the productivity of devices can be improved.

Abstract: An apparatus comprises a controller configured to generate a first list of measurement points arranged symmetrically with respect to a center of a shot region along a direction of scanning at a predetermined pitch, and a control by the controller includes a first control which causes a measurement device to measure a position of a surface with respect to each measurement point included in the first list, and a second control which causes the measurement device to measure the position with respect to each measurement point included in a second list obtained by excluding, from the first list, at least one of a measurement point with respect to which measurement is performed last in a first shot region and a measurement point with respect to which measurement is performed first in a second shot region next to the first shot region.

Abstract: The present invention provides a control apparatus including a feed-forward controller configured to perform feed-forward control of a controlled object, the apparatus being configured to obtain a first response data sequence of the controlled object measured by applying a first manipulated variable to the controlled object, and determining, assuming that a second response data sequence of the controlled object to be obtained if a second manipulated variable data sequence, obtained by respectively multiplying the first manipulated variable by gains as variables which can vary with time, is applied to the controlled object, is expressed as a linear combination of the first response data sequence with the gains as coefficients of the liner combination, the gains so that a discrepancy between the second response data sequence and a target data sequence falls within a tolerance.

Abstract: In view of realizing a lithographic process which makes it possible to estimate and correct flare with an extremely high accuracy, and causes only an extremely small dimensional variation in width, over the entire portion not only of a single shot region, but also of a single chip region, a mask pattern correction device of the present invention has a numerical aperture calculation unit calculating, for every single shot region, flare energy for a mask pattern corresponding to a transferred pattern, based on an exposure layout of a plurality of shot regions, or more specifically, while considering flare from a plurality of shot regions located around every single shot region.

Abstract: Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments include obtaining qualitative data from within the pattern area of a reticle indicative of the physical characteristics of the pattern area. Additional embodiments include obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. In further embodiments qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. Several embodiments provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements. This is expected to provide accurate data for correcting the photolithography tool to compensate for variances in the pattern area, and to increase throughput because the photolithography tool is not used to measure the reticle.

Abstract: An EUV radiation generation apparatus includes an optical gain medium configured to produce laser radiation for interaction with a target material to produce an EUV radiation-emitting plasma, and a structure defining an aperture through which the laser radiation may pass. The structure includes a radiation guide having an outer surface constructed and arranged to guide the laser radiation away from the optical gain medium.

Abstract: A method of optimizing an illumination pupil shape for a lithographic process comprises identifying a target pattern to be imaged by said lithographic process. It further comprises identifying at least one optimization point in said target pattern and identifying at least one design for manufacturing metric per optimization point. Additionally, it comprises selecting a set of illumination source points based on the identified at least one design for manufacturing metric and determining the illumination pupil shape based on the selected set of illumination source points.

Abstract: The disclosure relates to an optical system, such as a projection exposure apparatus for semiconductor lithography, including a manipulable correction arrangement for reducing image aberrations. In some embodiments, the system includes at least one manipulator configured to reduce image aberrations. The manipulator can include at least one optical element which can be manipulated by at least one actuator. The manipulator can be formed in changeable fashion together with an actuator.

Abstract: A measuring apparatus which measures a substrate on which a mark formed with a resist is formed via lithography. An acquisition unit acquires information of an edge interval in an image of the mark under two different measurement conditions, and a calculation unit calculates a defocus value in the lithography based on a difference between the edge intervals of which information is acquired under the two different measurement conditions.

Abstract: A method for printing a pattern of features including the steps of providing a substrate having a recording layer disposed thereon, providing a mask bearing a periodic pattern of features, arranging the substrate parallel to the mask and with a separation having an initial value, providing an illumination system for illuminating the mask with an intensity of monochromatic light to generate a transmitted light-field for exposing the recording layer, and illuminating the mask for an exposure time while changing the separation by a distance having a desired value and with a rate of change of separation, wherein at least one of the rate of change of separation and the intensity of light are varied during the change of separation, whereby the mask is illuminated by an energy density per incremental change of separation that varies over said distance.

Abstract: According to one embodiment, there is provided an exposure apparatus including an acquisition unit, and a calculation unit. The acquisition unit obtains a plurality of measured values. The plurality of measured values is measured for a plurality of focus offset quantities different from each other. Each of the plurality of measured values represents positional deviation distribution within a shot area. The calculation unit calculates a plurality of distortion errors from the plurality of measured values and obtains a correlation between the focus offset quantity and alignment compensation value to compensate for the distortion error, in response to the plurality of focus offset quantities and the plurality of distortion errors.

Abstract: A method of controlling a spectral property of a light beam includes directing a light beam to a lithography exposure apparatus configured to create a pattern on a wafer; receiving information representative of a spectral property of the light beam; receiving information representative of an optical imaging condition of the lithography exposure apparatus; estimating a characteristic value of the light beam based on the received spectral property information and the received optical imaging condition information; determining whether the estimated light beam characteristic value matches a target light beam characteristic value; and if it is determined that the estimated light beam characteristic value does not match the target light beam characteristic value, adjusting the spectral property of the light beam.

Abstract: An immersion lithographic apparatus is described with a drain configured to remove liquid from a gap between an edge of the substrate and the substrate table on which the substrate is supported. The drain is provided with a means to provide liquid to the drain irrespective of the position of the substrate table and/or a means to saturate gas within the drain. Those measures reduce the variations in heat load due to evaporation of liquid in the drain.

Abstract: A fluid handling structure and lithographic apparatus is disclosed in which measures are taken, in particular to the dimensions and spacing of an array of openings in a bottom surface of the fluid handling structure, to deal with and/or prevent formation of bubbles in immersion liquid.

Abstract: Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.

Abstract: A method of determining overlay error. The method includes transferring a pattern from a reticle to a wafer and selecting a first set of data points to measure the positional difference between features on the reticle and features on the wafer. The method also includes determining a second set of data points characteristic of the first set of data points but containing fewer data points. A control system for using the second set of data points to dynamically adjust the position of the reticle.

Abstract: An exposure method comprises a calculation step of calculating a correction amount of a correction unit which corrects a change in imaging characteristics of a projection optical system based on at least one of parameters including a numerical aperture and effective light source of an illumination optical system, a numerical aperture of the projection optical system, and a size and pitch of a pattern, and an amount of change in environment condition in the projection optical system; and a correction step of making the correction unit operate in accordance with the correction amount calculated in the calculation step.

Abstract: An exposure apparatus includes an illumination system which illuminates an original, a projection optical system which projects a pattern of the original onto a substrate, a measurement device configured to measure optical characteristics of at least one of the illumination system or the projection optical system, and a control unit configured to correct, the measurement results obtained by the measurement device, depending on a polarization state included in illumination light from the illumination system.

Abstract: A scatterometer configured to derive a property of a substrate, includes an optical arrangement that produces a beam of radiation. An objective lens is arranged to focus the beam of radiation onto a target on the substrate. The optical arrangement is arranged to change the divergence of the beam incident on the objective lens, thereby changing spherical aberration caused by the objective lens on the beam focused on the target. A detection arrangement is arranged to detect the beam of radiation after reflection or scattering from the substrate.

Abstract: An exhaust apparatus includes a structural member; a vacuum pump configured to exhaust a gas via the structural member; and a regulator configured to regulate a temperature of the structural member. The structural member has first and second end faces and a columnar through hole connecting the first and second end faces to each other. The apparatus is configured such that the vacuum pump exhausts a gas via the through hole.

Abstract: A method of reducing image placement errors in a microlithographic projection exposure apparatus includes providing a mask, a light sensitive layer and a microlithographic projection exposure apparatus which images features of the mask onto the light sensitive surface using projection light. Subsequently, image placement errors associated with an image of the features formed on the light sensitive surface are determined either by simulation or metrologically. Then an input state of polarization of the projection light is changed to an elliptical output state of polarization which is selected such that the image placement errors are reduced.

Abstract: A projection optical system is configured to project an image of an object plane onto an image plane, and includes a first optical element having an aspheric shape that is rotationally asymmetric with respect to an optical axis, a moving unit configured to move the first optical element in a direction perpendicular to the optical axis, and a second optical element fixed on the optical axis, and configured to reduce an optical path length difference caused by an aspheric surface of the first optical element, the second optical element having no aspheric shape complement to the aspheric shape of the first optical element.

Abstract: An immersion liquid confinement apparatus confines an immersion liquid in an immersion area that includes a gap between a projection system and an object of exposure in an immersion lithography system. The apparatus also recovers the immersion liquid from the immersion area. The apparatus includes a confinement member and first and second liquid-permeable members. The confinement member includes an outlet and an aperture through which a patterned image is projected onto the object. The first liquid-permeable member covers the outlet and has a first surface that faces the object and a second surface opposite the first surface, the second surface contacting a first chamber. The second liquid-permeable member has first and second oppositely-facing surfaces, the first surface of the second liquid-permeable member contacts the first chamber, the second surface of the second liquid-permeable member contacts a second chamber that is different from the first chamber.

Abstract: A liquid immersion exposure apparatus in which a substrate is exposed with an exposure beam, includes a projection optical system by which the substrate is exposed to the exposure beam, a first inlet disposed at a first position, which is capable of supplying a first liquid to a space adjacent to a bottom surface of the projection optical system, and a second inlet disposed at a second position which is different from the first position, the second inlet being capable of supplying a second liquid that is different from the first liquid to the space.

Abstract: The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.

Abstract: An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

Abstract: An exposure apparatus is provided with a nozzle member that has at least one of a supply outlet which supplies the liquid and a collection inlet which recovers the liquid. By immersing the nozzle member in cleaning liquid LK stored in container, the nozzle member is cleaned.

Abstract: According to one embodiment, an illumination optical system comprises an optical integrator which forms a secondary light source on an illumination pupil plane in an illumination optical path of the illumination optical system with incidence of exposure light from a light source device thereinto; a first transmission filter arranged in an optical path of the exposure light emitted from a first surface illuminant of the secondary light source and having a transmittance characteristic varying according to angles of incidence of the exposure light; a second transmission filter arranged in an optical path of the exposure light emitted from a second surface illuminant of the secondary light source and having a transmittance characteristic varying according to the angles of incidence of the exposure light; and a rotation mechanism which rotates the first and second transmission filters so as to vary an angle of inclination thereof relative to the optical axis of the illumination optical system.

Abstract: Projection objectives, projection exposure apparatuses and related systems and components are disclosed.

Abstract: A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.

Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Abstract: An exposure method forms an immersion area in at least a part of a substrate including a projection area of a projection optical system and projects an image of a mask pattern onto the substrate through liquid between the projection optical system and the substrate. Distribution of the mask pattern is measured and adjustment is made so that a desired image of the pattern is projected onto the substrate according to distribution of the exposure light incident into the liquid between the projection optical system and the substrate when exposing the substrate. It is possible to expose the substrate with the pattern accurately regardless of the distribution of the mask pattern.

Abstract: A wavelength shift measuring apparatus of the present invention is a wavelength shift detection sensor (WLCD1) which measures a shift of a wavelength of a light beam emitted from a light source, and includes a beam splitter (BS2) splitting the light beam emitted from the light source into a plurality of light beams and to synthesize two light beams among the plurality of light beams to generate an interference light, a spacer member (SP) provided so that an optical path length difference of the two light beams split by the beam splitter (PBS2) is constant, and a plurality of photoelectric sensors (PD) detecting the interference light generated by the beam splitter (BS2). The plurality of photoelectric sensors (PD) output a plurality of interference signals having phases shifted from one another based on the interference light to calculate a wavelength shift using the plurality of interference signals.

Abstract: An exposure apparatus is provided which can supply and collect a liquid in a prescribed state, and that can suppress degradation of a pattern image projected onto a substrate. The exposure apparatus is provided with a nozzle member (70) having a supply outlet (12) that supplies a liquid (LQ) and a collection inlet (22) that collects a liquid (LQ), and a vibration isolating mechanism (60) that supports the nozzle member (70) and vibrationally isolates the nozzle member (70) from a lower side step part (7) of a main column (1).

Abstract: A measurement apparatus, which measures a wavefront aberration of an optical system to be measured, comprises: a calculation unit configured to calculate the wavefront aberration based on an interference fringe generated by light which passed through the optical system to be measured; and a determination unit configured to calculate an evaluation value indicating a wavefront state based on the wavefront aberration calculated by the calculation unit, and determine the calculated wavefront aberration as the wavefront aberration of the optical system if the evaluation value falls within an allowable range.

Abstract: An apparatus including an original stage that holds an original, a substrate stage that holds a substrate, and a projection optical system that projects a pattern of the original onto the substrate, and being configured to scan and expose the substrate during a period in which the speeds of the original stage and the substrate stage change, comprises a controller configured to correct, a distortion generated in an image transferred onto the substrate due to at least one of deformation of the original stage in response to a change in speed of the original stage and deformation of the substrate stage in response to a change in speed of the substrate stage, based on a correction value determined by an acceleration of the substrate stage.

Abstract: An illumination optical unit for EUV microlithography includes a first optical element having a plurality of first reflective facet elements and a second optical element having a plurality of second reflective facet elements. Each first reflective facet element from the plurality of the first reflective facet elements has a respective maximum number of different positions which defines a set—associated with the first facet element—consisting of second reflective facet elements in that the set consists of all second facet elements onto which the first facet element directs radiation in its different positions during the operation of the illumination optical unit. The plurality of second reflective facet element forms a plurality of disjoint groups, wherein each of the groups and each of the sets contain at least two second facet elements, and there are no two second facet elements of a set which belong to the same group.

Abstract: A VI production system and method for automatic review of variable imaging job output includes a VI interpreter includes raster image processing for producing electronic output document images based on a variable imaging job included in a VI job stream. A proofing process includes obtaining sample document images from the output document images, and for each obtained sample document image, performing a review procedure. The review procedure includes comparing the obtained sample document image to a corresponding expected document image selected from the expected database to determine differences between the obtained sample document image and the corresponding expected document image. Based on at least one difference being determined, the differences are resolved by displaying the obtained sample document image on the user interface, indicating in the displayed sample document image each of the differences, and performing a difference procedure based on an operator input.

Abstract: A method of detecting reticle error may include using an optical source of an exposure unit to cause light to be incident on a reticle installed in the exposure unit, and detecting the reticle error using only 0th diffraction light from among diffraction lights transmitted through the reticle. A method of detecting reticle error may include: installing a reticle, including a mask substrate and mask patterns having a critical dimension formed on the mask substrate, in an exposure unit to cause light to be incident on the reticle; exposing a photoresist film disposed on a wafer in the exposure unit using only 0th diffraction light from among diffraction lights transmitted through the reticle; developing the exposed photoresist film; and analyzing a thickness change, an image, or the thickness change and image of the developed photoresist film, in order to detect the reticle error at a wafer level.