Abstract: A double-sided maskless exposure system and method consists of light sources which includes two light wavelength segments, maskless optical engines in which a 2D spatial light modulation(spatial light modulator) device, such as DMD, is generating a plurality of pixel array of the pattern, vision system, moving substrate and computer control system. The double-sided maskless exposure system at least includes two maskless optical engines with auto-calibration function which can correct any alignment error in-line. Each optical engine is for each side of the substrate. The optical engines are aligned each other in pairs and are simultaneously patterning on each side of the moving substrate. The system also includes a manipulator for moving, stepping or scanning the optical engines, relative to the substrate so that it can create a contiguous whole image on the both sides of the subject.

Abstract: According to one embodiment, an exposure control apparatus includes exposure setting unit that performs an exposure setting of setting an exposure shot as a shot that is exposed or a shot that is not exposed based on height information on a height of a substrate in the exposure shot arranged in a substrate peripheral portion, and an exposure instructing unit that outputs an exposure instruction to the shot that is exposed and an instruction to skip an exposure to the shot that is not exposed.

Abstract: A lithographic apparatus and device manufacturing method makes use of a liquid confined in a reservoir between the projection system and the substrate. Bubbles forming in the liquid from dissolved atmospheric gases or from out-gassing from apparatus elements exposed to the liquid are detected and/or removed so that they do not interfere with exposure and lead to printing defects on the substrate. Detection may be carried out by measuring the frequency dependence of ultrasonic attenuation in the liquid and bubble removal may be implemented by degassing and pressurizing the liquid, isolating the liquid from the atmosphere, using liquids of low surface tension, providing a continuous flow of liquid through the imaging field, and/or phase shifting ultrasonic standing-wave node patterns.

Abstract: Disclosed is a maskless exposure method, where it is possible to perform a more precise optical alignment using a first pattern of a maskless exposure part and a second pattern of a main reference unit, and it is also possible to reduce generation of a blur in an exposed pattern.

Abstract: An exposure apparatus comprises a stage main body having a mounting surface, and a correcting mechanism that corrects a shape of the mounting surface.

Abstract: Illumination devices of a microlithographic projection exposure apparatus, include a deflection device with which at least two light beams impinging on the deflection device can be variably deflected independently of one another by variation of the deflection angle in each case in such a way that each of the light beams can be directed onto at least one location in a pupil plane of the illumination device via at least two different beam paths; wherein, on the beam paths, at least one optical property of the respective light beam is influenced differently.

Abstract: A micromirror of a micromirror array in an illumination system of a microlithographic projection exposure apparatus can be tilted through a respective tilt angle about two tilt axes. The micromirror is assigned three actuators which can respectively be driven by control signals in order to tilt the micromirror about the two tilt axes. Two control variables are specified, each of which is assigned to one tilt axis and which are both assigned to unperturbed tilt angles. For any desired combinations of the two control variables, as a function of the two control variables, one of the three actuators is selected and its control signal is set to a constant value, in particular zero. The control signals are determined so that, when the control signals are applied to the other two actuators, the micromirror adopts the unperturbed tilt angles as a function of the two control variables.

Abstract: A method for measuring a spherical aberration or a coma aberration of a projection optical system of an exposure apparatus configured to transfer an image of a pattern formed on an original plate onto a substrate through the projection optical system. The method for measuring the spherical aberration includes obtaining a focal position of the projection optical system under a first measurement condition, obtaining a focal position of the projection optical system under a second measurement condition different from the first measurement condition, and measuring the spherical aberration of the projection optical system based on a difference of the focal position obtained under the first and the second measurement conditions.

Abstract: A method for setting an illumination optical unit involves determining an actual value of an intensity-weighted illumination parameter of the illumination optical unit for multiple field points and for multiple illumination angles. The influence of a deformation of at least one of the optical surfaces of the illumination optical unit on the at least one illumination parameter is then determined. A desired value of the illumination parameter is then predefined. A desired form of the at least one optical surface is determined so that the actual value of the illumination parameter corresponds to the desired value of the illumination parameter within predefined limits. Finally, the optical surface is deformed with the aid of at least one actuator so that an actual form of the optical surface corresponds to the desired form.

Abstract: The disclosure provides projection objectives which may be used in a microlithographic projection exposure apparatus to expose a radiation-sensitive substrate arranged in the region of an image surface of the projection objective with at least one image of a pattern of a mask arranged in the region of an object surface of the projection objective. The disclosure also provides projection exposure apparatus which include such projection objectives, as well as related components and methods.

Abstract: A method for measuring a spherical aberration amount of a projection optical system that projects an image of a pattern formed on an original plate onto a substrate, includes: obtaining a first focal position in a direction of an optical axis of the projection optical system under a first measurement condition; obtaining a second focal position in the direction of the optical axis of the projection optical system under a second measurement condition; calculating the spherical aberration amount of the projection optical system based on a difference between the first focal position and the second focal position. Under the first measurement condition the focal position in the direction of the optical axis with respect to the spherical aberration amount does not change; and under the second measurement condition the focal position in the direction of the optical axis with respect to the spherical aberration amount changes.

Abstract: A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured so that a defined image field curvature of the projection objective is set such that an object surface that is curved convexly with respect to the projection objective is imaged into a planar image surface. Such projection objective, with a suitable setting of the object surface curvature, avoids the disturbing effect on the image quality that would otherwise result from gravitation-dictated bending of a mask.

Abstract: The mark position detection device of the present invention, which detects a position of a mark provided on a substrate, includes an image sensor with changeable resolution and readout area, an optical system that directs light reflected from the mark to the image sensor, and a control unit configured to detect the position of the mark based on an output of the image sensor. The control unit performs a first position detection based on the output of the image sensor with a first resolution and a first readout area, and a second position detection based on the output of the image sensor with a second resolution, which has higher resolution than the first resolution, and a second readout area, which is determined to be narrower than the first readout area and lies within the first readout area based on the first position detection.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: Method to calibrate a substrate table position in a lithographic apparatus includes providing a substrate on the substrate table with a two dimensional arrangement of patterns; positioning the substrate table with a positioning system; measuring positions of the substrate table in at least two dimensions with a position measurement system; reading out the arrangement of patterns as a function of the measured positions of the substrate table with a pattern read out system to obtain pattern read out results; deriving position errors as a function of the measured positions of the substrate table compared with the pattern read out results; calibrating the positioning system using the position errors, the calibrating including determining drift influences of the positioning system, correcting the position errors as a function of the corresponding two dimensional position of the substrate table with the determined drift influences, and calibrating the positioning system with the corrected position errors.

Abstract: According to one embodiment, a method of correcting defects in a reflection-type mask is provided, which comprises acquiring a mask-pattern image of the mask, by using a mask-defect correction apparatus includes a mechanism configured to detect a defect in the mask and a mechanism configured to correct the defect, acquiring a simulated wafer-transfer optical image for the mask, by using an AIMS configured to simulate a wafer-transfer optical image, thereby to determine whether the mask is defective, locating a mask defect, in a mask-pattern image acquired by the mask-defect correction apparatus, by referring to the simulated pattern image acquired by the AIMS, and correcting the defect by the mask-defect correction apparatus, on the basis of the position of the mask defect, thus detected.

Abstract: The disclosure relates to a method for compensating image errors, generated by intensity distributions in optical systems, such as in projection lens arrays of microlithography systems, and to respective optical systems, such as projection lens arrays of microlithography systems.

Abstract: The disclosure relates to an optical correction device with thermal actuators for influencing the temperature distribution in the optical correction device. The optical correction device is constructed from at least two partial elements which differ with regard to their ability to transport heat. Furthermore, the disclosure relates to methods for influencing the temperature distribution in an optical element.

Abstract: A telecentricity corrector is incorporated into a microlithographic projection system to achieve telecentricity targets at the output of the microlithographic projection system. The telecentricity corrector is located between an illuminator and a projection lens of the projection system, preferably just in advance of a reticle for controlling angular distributions of light illuminating the reticle.

Abstract: In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.

Abstract: A substrate distortion measurement apparatus comprising one or more optical detectors arranged to measure the locations of pits or holes provided in a substrate, a memory arranged to store previously determined locations of the pits or holes in the substrate, and a comparator arranged to compare the measured locations of the pits or holes with the previously determined locations of the pits or holes, to determine distortion of the substrate.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a stage configured to move the substrate; and a sensor unit which is arranged on the stage and configured to receive light having passed through the projection optical system, the sensor unit including an aperture plate which is configured to be used in measuring different optical performances, and on which a plurality of aperture patterns with different shapes or different sizes are formed, and a photoelectric conversion device configured to photoelectrically convert the light beams from the plurality of aperture patterns.

Abstract: A lithographic apparatus includes a uniformity correction system located at a plane and configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers that move into and out of intersection with a beam so as to correct an intensity of respective portions of the radiation beam. According to another embodiment, a method includes for: focusing a beam of radiation at a first plane to form pupil; adjusting the intensity of the beam near the first plane by moving fingers located near the first plane into and out of a path of the beam of radiation, wherein a width of a tip of each of the fingers is larger than that of corresponding actuating devices used to move each corresponding one of the fingers; patterning the beam; and projecting the patterned beam onto a substrate.

Abstract: A lithographic method of determining a sensitivity of a property of a pattern feature to change in optical aberrations of a lithographic apparatus used to provide that pattern feature. The method includes controlling a configuration of the lithographic apparatus to establish a first aberration state, forming a first image of the pattern feature with that lithographic apparatus when the lithographic apparatus is in that first aberration state, measuring a property of the image, controlling a configuration of the lithographic apparatus to establish a second, different, aberration state, forming an image of the same pattern feature with that lithographic apparatus when the lithographic apparatus is in that second aberration state, measuring a same property of the image, and using the measurements to determine the sensitivity of the property of the pattern feature to changes in the aberration state.

Abstract: A position control system configured to control the position of a movable object, includes: a position measurement system configured to determine a position of a sensor or sensor target on the movable object, a comparator configured to provide an error signal by comparing a set-point position and a position feed-back signal based on the measured position, a controller to provide a control signal based on the error signal, a feed-forward device to provide a feed-forward signal on the basis of a first signal related to the desired position, and one or more actuators configured to act on the movable object based on the control signal and the feed-forward signal, wherein the position control system further includes a compliance compensation device providing a compliance compensation signal, wherein the compliance compensation signal is subtracted from a measured position of the position measurement system to obtain the feed-back position signal.

Abstract: A deforming mechanism for deforming a transmissive optical element comprises a rotation member configured to hold the optical element and to rotate around an axis parallel to a tangential line of a circumference of the optical element at a portion where the rotation member holds the optical element, so as to deform the optical element by the rotation, a torque generating unit configured to generate a torque to rotate the rotation member around the axis, a holding base, and an elastic member connecting the holding base to the torque generating unit.

Abstract: An optical system for semiconductor lithography including a plurality of optical components, as well as related components and methods, are disclosed. The apparatus can include an optical component that can be moved by a distance along a straight line within a time of between 5 ms and 500 ms. The straight line can have a polar and azimuth angle of between 0° and 90°, and a distance between the straight line and an optical axis of the apparatus being less than a cross-sectional dimension of a projection exposure beam bundle of the projection exposure apparatus. The apparatus can also include a guide unit configured to guide the optical component.

Abstract: Methods of manufacturing semiconductor devices and methods of optical proximity correction methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes determining an amount of reactive ion etch (RIE) lag of a RIE process for a material layer of the semiconductor device, and adjusting a size of at least one pattern for a feature of the material layer by an adjustment amount to partially compensate for the amount of RIE lag determined.

Abstract: A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare.

Abstract: A drive unit drives a wafer stage in a Y-axis direction based on a measurement value of an encoder that measures position information of the wafer stage in the Y-axis direction and based on information on the flatness of a scale that is measured by the encoder. In this case, the drive unit can drive the wafer stage in a predetermined direction based on a measurement value after correction in which a measurement error caused by the flatness of the scale included in the measurement value of the encoder is corrected based on the information on the flatness of the scale. Accordingly, the wafer stage can be driven with high accuracy in a predetermined direction using the encoder, without being affected by the unevenness of the scale.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.

Abstract: An immersion lithographic apparatus is provided with a liquid confinement structure which defines at least in part a space configured to contain liquid between the projection system and the substrate. In order to reduce the crossing of the edge of the substrate which is being imaged (which can lead to inclusion of bubbles in the immersion liquid), the cross-sectional area of the space in a plane parallel to the substrate is made as small as possible. The smallest theoretical size is the size of the target portion which is imaged by the projection system. In an embodiment, the shape of a final element of the projection system is also changed to have a similar size and/or shape in a cross-section parallel to the substrate to that of the target portion.

Abstract: An apparatus comprises a grouping unit dividing substrates into groups, and determining reference and non-reference substrates for each group, a measurement unit measuring a first number of points for the reference substrate, and measuring a second number, smaller than the first number, of points for the non-reference substrate, a correction value determining unit determining a first correction value to position the reference substrate, and a second correction value to position the non-reference substrate, and an exposure unit exposing the reference substrate by positioning it based on the first correction value, and exposing the non-reference substrate by positioning it based on the second correction value, the correction value determining unit determining the first correction value based on the measurement of the reference substrate, and determining the second correction value based on the measurement of the non-reference substrate, and the measurement of the reference substrate or the first correction valu

Abstract: The present invention provides a measurement apparatus which measures a wavefront aberration of a measurement target optical system, the apparatus including a fringe scanning unit configured to perform fringe scanning by changing a phase difference between test light and reference light, a determination unit configured to determine a nonlinear error representing a nonlinear change in feature amount, which is derived from an interference pattern between the test light and the reference light, with respect to predetermined control data by performing fringe scanning by the fringe scanning unit in accordance with the control data in a plurality of phase states, and a correction unit configured to correct, based on the nonlinear error determined by the determination unit, a wavefront aberration of the measurement target optical system calculated from the interference pattern between the test light and the reference light.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region, hereby reducing the intra-field overlay errors.

Abstract: A lithographic method is provided that includes using an illumination system to provide a beam of radiation having an illumination mode, using a patterning device to impart the radiation beam with a pattern in its cross-section, and projecting the patterned radiation beam onto a substrate. The illumination mode is adjusted after the radiation beam has been projected onto the substrate. The adjustment is arranged to reduce the effect of optical aberrations due to lens heating on the projected pattern during projection of the pattern onto a subsequent substrate.

Abstract: An exposure apparatus projects a pattern of an original illuminated by an illumination system onto a substrate, by a projection optical system, to expose the substrate. A light-shielding member defines a position at which light falls on an image plane of the projection optical system. An illuminance sensor measures an illuminance on the image plane, and a controller detects a position, on the image plane, of the illuminance sensor. The controller detects the position of the illuminance sensor based on a peak of the output from the illuminance sensor and a position of the light shielding member obtained while moving the light-shielding member, so that a position at which light falls on the image plane moves along the image plane.

Abstract: A method is disclosed for improving an optical imaging property, for example spherical aberration or the focal length, of a projection objective of a microlithographic projection exposure apparatus. First, an immersion liquid is introduced into an interspace between a photosensitive surface and an end face of the projection objective. Then an imaging property of the projection objective is determined, for example using an interferometer or a CCD sensor arranged in an image plane of the projection objective. This imaging property is compared with a target imaging property. Finally, the temperature of the immersion liquid is changed until the determined imaging property is as close as possible to the target imaging property.

Abstract: In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation (?E) and a focus deviation (?F) are calculated by following equations: TCD+BCD=??E+(TCD0+BCD0) TCD?BCD=?1?F+?2?F3 Here, ?, ?1 and ?2 are constants, ?E=E?E0, ?F=F?F0, E represents a real exposure dose, F represents a real exposure focus, E0 represents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, F0 represents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCD0 and BCD0 are theoretical values in case of E0 and F0.

Abstract: The present invention provides a measuring apparatus which measures a shape of a surface of a measurement target object, comprising a light projecting optical system configured to split light from a light source into measurement light and reference light so that the measurement light enters the surface of the measurement target object and the reference light enters a reference mirror, a light receiving optical system configured to guide the measurement light reflected by the surface of the measurement target object and the reference light reflected by the reference mirror to a photoelectric conversion device, and a processing unit configured to calculate the shape of the surface of the measurement target object based on an interference pattern which is detected by the photoelectric conversion device and formed by the measurement light and the reference light.

Abstract: A projection objective is disclosed. The projection objective can include a plurality of optical elements arranged to image a pattern from an object field in an object surface of the projection objective to an image field in an image surface of the projection objective with electromagnetic operating radiation from a wavelength band around an operating wavelength ?. The plurality of optical elements can include an optical correction plate that includes a body comprising a material transparent to the operating radiation, the body having a first optical surface, a second optical surface, a plate normal substantially perpendicular to the first and second optical surfaces, and a thickness profile defined as a distance between the first and second optical surfaces measured parallel to the plate normal. The first optical surface can have a non-rotationally symmetric aspheric first surface profile with a first peak-to-valley value PV1>?.

Abstract: There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

Abstract: Provided is an exposing method using a variable shaped beam that may minimize a critical dimension (CD) distribution and a mean to target (MTT) difference generated during a process by correcting CD linearity of the design CD of a circuit pattern, and a pattern forming method using the exposing method. In the exposing method, a determination is made as to whether the design size of a beam shot used to expose a circuit pattern is less than a value, or greater than the value. If the design size is greater than the value, the size of the beam shot may be linearly corrected. When the design size is less than the value, the size of the beam shot may be non-linearly corrected.

Abstract: A lithographic projection apparatus is disclosed where at least part of a space between a projection system of the apparatus and a substrate is filled with a liquid by a liquid supply system. The projection system is separated into two separate physical parts. With substantially no direct connection between the two parts of the projection system, vibrations induced in a first of the two parts by coupling of forces through the liquid filling the space when the substrate moves relative to the liquid supply system affects substantially only the first part of the projection system and not the other second part.

Abstract: A system for detecting at least one contamination species in an interior space of a lithographic apparatus, including: at least one monitoring surface configured to be in contact with the interior space, a thermal controller configured to control the temperature of the monitoring surface to at least one detection temperature, and at least one detector configured to detect condensation of the at least one contamination species onto the monitoring surface.

Abstract: An optical system of a microlithographic projection exposure apparatus contains a module, which can be fitted in the optical system and removed from it as a unit. The module contains a cavity which can be completely filled with a liquid and hermetically sealed, and a concavely curved optical surface which bounds the cavity at the top during operation of the projection exposure apparatus. This makes it possible to fill the module outside the optical system. The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.

Abstract: A method of measuring a lithographic projection apparatus is described. The method includes imaging a verification mark of a patterning device onto a radiation-sensitive layer held by a substrate table of a lithographic apparatus, wherein the verification mark includes at least a first, a second and a third verification structure that have a mutually different sensitivity profile for a dose setting, a focus setting and a contrast setting.

Abstract: Embodiments of the invention relate to a method for determining exposure settings for a target field on a substrate in a lithographic exposure process, including providing calibration data by determining the position of a calibration field in a first direction at a plurality of calibration positions in a second and third direction relative to the position of the calibration field. The method also includes providing production data by establishing the position on the substrate of the target field in the second and third direction and by measuring the position of the exposure field in the first direction at least one measurement position relative to the position of the exposure field in the second and third direction.

Abstract: A method for correcting errors on a wafer processed by a photolithographic mask at a wafer processing site is provided. The method comprises measuring errors on the wafer, and modifying a pattern placement on the photolithographic mask by locally applying femtosecond light pulses of a laser system to the photolithographic mask at the wafer processing site.

Abstract: A lithographic manufacturing process is disclosed in which first information of a lithographic transfer function of a first lithographic projection apparatus is obtained. The information is compared with second information of a reference lithographic transfer function (e.g. of a second lithographic projection apparatus). The difference between the first and second information is calculated. Then, the change of machine settings for the first lithographic projection apparatus, needed to minimize the difference, is calculated and applied to the first lithographic projection apparatus. In an exemplary application, a match between the first and second lithographic projection apparatus of any pitch-dependency of feature errors is improved.