Abstract: A method of processing a wafer is provided. The method includes providing a reference plate below the wafer. The reference plate includes a reference pattern. The reference plate is imaged to capture an image of the reference pattern by directing light through the wafer. A first pattern is aligned using the image of the reference pattern. The first pattern is applied to a working surface of the wafer based on the aligning.

Abstract: Methods are provided for performing a surgical procedure using optical coherence tomography (OCT) including extracting lenticular material from within a capsular bag of the eye of a patient; placing a replacement lens within the capsular bag after extraction of the lenticular material from the capsular bag; acquiring a plurality of OCT images that visualize the placement of the replacement lens within the capsular bag; and determining from the plurality of OCT images a degree of contact of the posterior surface of the replacement lens with the posterior portion of the capsular bag.

Abstract: A method for determining a contribution of a processing apparatus to a fingerprint of a parameter across a substrate, the method including: obtaining a delta image which relates to a difference between a first pupil image associated with inspection of a first feature on the substrate and a second pupil image associated with inspection of a second feature on the substrate, wherein the first and second features have different dose sensitivities; determining a rate of change of the difference in response to a variation of a dose used to form the first and second features; selecting a plurality of pixels within the delta image having a rate of change above a predetermined threshold; and determining the contribution using the determined rate of change and the delta image restricted to the plurality of pixels.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: A projection system includes a first and second optical system including an optical element. The optical element has a first transmissive surface, a reflection surface, and a second transmissive surface. The second transmissive surface has a convex shape an aspheric shape. An effective light ray range of the second transmissive surface has a first end close to an optical axis of the reflection surface in a first axis direction along a first axis perpendicular to the optical axis and a second end far from the optical axis. A first radius of curvature at the first end is greater than a second radius of curvature at the second end, and a first center of curvature of the first radius of curvature is farther than a second center of curvature of the second radius of curvature from the first end.

Abstract: There is provided a cleaning robot including a light source module, an image sensor and a processor. The light source module projects a line pattern and a speckle pattern toward a moving direction. The image sensor captures an image of the line pattern and an image of the speckle pattern. The processor calculates one-dimensional depth information according to the image of the line pattern and calculates two-dimensional depth information according to the image of the speckle pattern.

Abstract: The present disclosure relates a lithographic substrate marking tool. The tool includes a first electromagnetic radiation source disposed within a housing and configured to generate a first type of electromagnetic radiation. A radiation guide is configured to provide the first type of electromagnetic radiation to a photosensitive material over a substrate. A second electromagnetic radiation source is disposed within the housing and is configured to generate a second type of electromagnetic radiation that is provided to the photosensitive material.

Abstract: A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m?1K?1.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.

Abstract: A set of the pulses of light in a light beam is passed through a mask toward a wafer during a single exposure pass; at least a first aerial image and a second aerial image on the wafer based on pulses of light in the set of pulses that pass through the mask is generated during a single exposure pass, the first aerial image is at a first plane on the wafer and the second aerial image is at a second plane on the wafer, the first plane and the second plane being spatially distinct from each other and separated from each other by a separation distance along the direction of propagation; and a three-dimensional semiconductor component is formed.

Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.

Abstract: A pellicle includes a frame. The frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle; and a bottom surface of the frame defines only a single recess therein. The pellicle further includes a gasket configured to fit within the single recess.

Abstract: An imprint method includes bringing a mold and an uncured imprint material supplied onto a substrate into contact with each other, enhancing viscoelasticity of the imprint material, making position adjustment of the mold and the substrate, and curing the imprint material. The imprint material is supplied onto a shot region of the substrate, and time between bringing the mold brought into contact with the imprint material and starting enhancing viscoelasticity is shorter when the shot region includes an outer periphery of the substrate than when the shot region does not include the outer periphery of the substrate.

Abstract: Provided is a machine learning-based semiconductor manufacturing yield prediction system and method. A result prediction method according to an embodiment of the present invention comprises: learning different neural network models by classifying different types of data according to their types and respectively inputting the classified different types of data to the different neural network models; and predicting result values by classifying input data according to their types and respectively inputting the classified input data to different neural network models. Therefore, it is possible to apply different neural network models to respective data according to their types, thereby ensuring a neural network model having a structure appropriate for the characteristics of each type of data and thus accurately predicting a result value.

Abstract: A method for manufacturing a display substrate includes: providing a base, the base having a non-display area that includes a binding area; forming a light-emitting functional layer and an encapsulating layer successively on a side of the base, an orthographic projection of the encapsulating layer on the base not overlapping with the binding area; and forming a touch structure on a surface of encapsulating layer away from the base, the touch structure including a first part that is in contact with the encapsulating layer, and a material of the first part including a conductive material. Forming the first part includes: forming the first part by a nanoimprint process.

Abstract: An illumination apparatus for reducing speckle effect in light reflected off an illumination target includes a laser; diffuser positioned in an optical path between an illumination target and the laser to diffuse collimated laser light in a planar fan of diffused light that spreads in one dimension across at least a portion of the illumination target; and a beam deflector to direct the collimated laser light incident on the beam deflector to sweep across different locations on the linear diffuser within an exposure time for illumination of the illumination target by the diffused light. The different locations span a distance across the linear diffuser that provides sufficient uncorrelated speckle patterns, at an image sensor, in light reflected from an intersection of the planar fan of light with the illumination target to add incoherently when imaged by the image sensor within the exposure time.

Abstract: An exposure apparatus includes a first temperature controller for controlling a temperature distribution on an optical element of a projection optical system, and a second temperature controller for controlling a temperature distribution on an optical element of the projection optical system, wherein in a first period in which the exposure operation is executed, at least one of the first temperature controller and the second temperature controller operates to reduce a change in an aberration of the projection optical system due to the exposure operation being executed, and in a second period which follows the first period and in which the exposure operation is not executed, at least one of the first temperature controller and the second temperature controller operates to reduce a change in an aberration due to the exposure operation not being executed.

Abstract: Disclosed is an illumination system for delivering incoherent radiation to a metrology sensor system. Also disclosed is an associated metrology system and method. The illumination system comprises a spatial filter system for selective spatial filtering of a beam of said incoherent radiation outside of a module housing of the metrology sensor system. At least one optical guide is provided for guiding the spatially filtered beam of incoherent radiation to the metrology sensor system, the at least one optical guide being such that the radiation guided has a substantially similar output angle as input angle.

Abstract: An illumination optical system of the present invention includes a first lens array FE including a plurality of lens cells dividing a light flux emitted from a light source into a plurality of light fluxes, a second lens array MLAi including lens cells on which spot lights exiting from the lens cells included in the first lens array FE are condensed, and a first optical member IL3 imaging the spot light, which has been condensed on the lens cell included in the second lens array MLAi, on one of optical modulation elements constituting an optical modulation unit.

Abstract: A method includes illuminating a mirror array with light having light amplitudes forming a first greyscale pattern, the mirror array including a number of mirrors and at least two of the mirrors are illuminated with a same amplitude of the light. The method also includes imaging the light with the light amplitudes onto a substrate to create a second greyscale pattern, different than the first greyscale pattern, at the substrate.

Abstract: A measurement apparatus (10) for measuring a wavefront aberration of an imaging optical system (12) includes (i) a measurement wave generating module (24) which generates a measurement wave (26) radiated onto the optical system and which includes an illumination system (30) illuminating a mask plane (14) with an illumination radiation (32), as well as coherence structures (36) arranged in the mask plane, and (ii) a wavefront measurement module (28) which measures the measurement wave after passing through the optical system and determines from the measurement result, with an evaluation device (46), a deviation of the wavefront of the measurement wave from a desired wavefront. The evaluation device (46) determines an influence of an intensity distribution (70) of the illumination radiation in the region of the mask plane on the measurement result and, when determining the deviation of the wavefront, utilizes the influence of the intensity distribution.

Abstract: A method for adjusting an optical source used for fabricating an optical receiver comprising a signal beam input port, a polarization beam splitter, and signal generation units, is disclosed. The optical source generates a reference beam by combining first and second beams having polarization directions orthogonal each other. The reference beam is introduced to the signal beam input port to measure a first size of an electric signal generated in one of the signal generation units. A half-wavelength plate is disposed in an optical path between the beam splitter and the one of the signal generation units. After that, the reference beam is introduced to the signal beam input port to measure a second size of an electric signal generated in the one of the generation units. At least one of the first and second beams is adjusted such that the first size and the second size become close to each other.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes providing a first layout including a plurality of first features and a second layout including a plurality of second features; shifting the second layout to generate a plurality of virtual layouts; comparing a score of each of the plurality of virtual layouts and determining a modified second layout having a target score out of the plurality of virtual layouts; and outputting the modified second layout to a photomask.

Abstract: The invention provides a vibration isolation system (IS), comprising a piston (402) to carry a payload, a connecting member (410), a spring (404) and a flexible member (408). The spring is arranged to support the piston along a direction with a positive stiffness. The flexible member is arranged to apply a force to the piston along the direction via the connecting member with a negative stiffness.

Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Abstract: A changing system for a microscope includes multiple afocal enlargement changing modules of different enlargement levels that are optionally introducible into an infinite beam path running along an optical axis of the microscope. Each of the enlargement changing modules contain a light deflection system. The light deflection systems are designed to adjust the path length of the infinite beam path passing through the respective enlargement changing module in such a way that all of the enlargement changing modules, regardless of the different enlargement levels of the enlargement changing modules, map an exit pupil of a lens of the microscope onto the same location along the optical axis.

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

Abstract: A method for controlling a test apparatus, the test apparatus including a test unit in which testers are arranged in columns and rows, each tester configured to test a substrate; aligners each configured to cause the substrate to be contacted with respect to a given tester from among the testers, at least one aligner provided in each row; and a controller configured to control the aligners. The method includes constraining, by the controller, operation of at least a second aligner, while alignment is performed through a first aligner from among the aligners.

Abstract: In an optical system for a projection exposure apparatus, the angle space of the illumination radiation of the projection optical unit at the reticle is twice as large in a first direction as the angle space of the illuminating radiation of the illuminating optical unit.

Abstract: An edge exposure tool may include a lens adjustment device that is capable of automatically adjusting various parameters of an edge exposure lens to account for changes in operating parameters of the edge exposure tool. In some implementations, the edge exposure tool may also include a controller that is capable of determining edge adjustment parameters for the edge exposure lens and exposure control parameters for the edge exposure tool using techniques such as big data mining, machine learning, and neural network processing. The lens adjustment device and the controller are capable of reducing and/or preventing the performance of the edge exposure tool from drifting out of tolerance, which may maintain the operation performance of the edge exposure tool and reduce the likelihood of wafer scratching, and may reduce the down-time of the edge exposure tool that would otherwise be caused by cleaning and calibration of the edge exposure lens.

Abstract: A method for correcting a mask pattern includes: providing an original mask pattern including at least one dense pattern area and at least one isolated pattern area, and the original mask pattern being divided into a first pattern and a second pattern, wherein the first pattern is formed in the isolated pattern area and extends to the dense pattern area, and the second pattern is formed in the dense pattern area; forming at least one slot on at least one section of the first pattern, and the at least one section of the first pattern is located on at least one transition area between the at least one isolated pattern area and the at least one dense pattern area; and performing an optical proximity correction operation on the first pattern formed with at least one slot and the second pattern. Using the corrected mask pattern may avoid the occurrence of necking or breaking on portion of the post-transfer pattern.

Abstract: A method for temperature control of a component that is transferable between a first system and a second system includes: ascertaining a temperature drift of a temperature of the component that is to be expected after transfer of the component from the first system into the second system; and modifying a temperature prevailing in the first system and/or a temperature prevailing in the second system such that the temperature drift that is actually occurring after transfer of the component from the first system into the second system is reduced with respect to the expected temperature drift.

Abstract: An immersion lithography apparatus controller configured to control a positioner to move a support table to follow an exposure route and to control a liquid confinement structure, the controller configured to: predict whether liquid will be lost from an immersion space during at least one motion of the route in which an edge of the object passes under an edge of the immersion space, and if liquid loss from the immersion space is predicted, modify the fluid flow such that a first fluid flow rate into or out of an opening at a leading edge of the liquid confinement structure is different to a second fluid flow rate into or out of an opening at a trailing edge of the liquid confinement structure during the motion of predicted liquid loss or a motion of the route subsequent to the motion of predicted liquid loss.

Abstract: A method of configuring a step of scanning a beam of photons or particles across a patterning device for exposing a pattern onto a substrate, wherein the method includes determining a spatial resolution of a patterning correction configured to improve quality of the exposing, and determining a spatial dimension of the beam based on the determined spatial resolution of the patterning correction.

Abstract: An optical arrangement of an imaging device for microlithography, particularly for using light in the extreme UV range, includes an optical element and a holding device for holding the optical element. The optical element includes an optical surface and defines a plane of main extension, in which the optical element defines a radial direction and a circumferential direction. The holding device includes a base element and more than three separate holding units. The holding units are connected to the base element and arranged in a manner distributed along the circumferential direction and spaced apart from one another. The holding units hold the optical element with respect to the base element. Each of the holding units establishes a clamping connection between the optical element and the base element. The clamping connection for each holding unit is separate from the clamping connections of the other holding units.

Abstract: An apparatus, a system, and a method for detecting water supply based on a vision sensor by performing big data, an artificial intelligence (AI) algorithm, and/or a machine learning algorithm in a 5G environment connected for the Internet of things is provided. The apparatus for detecting water may be used for a washing machine and includes a vision sensor mounted on a tub or in the vicinity of the tub, directed toward at least one water supply region of interest in the tub, and configured to acquire an image of the water supply region of interest, and a water supply level determiner configured to detect a water supply level through a vision algorithm based on the image information acquired by the vision sensor. The determiner may predict water supply time to the point in time at which the water supply will be completed based on models trained by machine learning.

Abstract: A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.

Abstract: A device may determine at least one metric related to a plurality of laser pulses associated with a Q-switched laser. The device may determine a statistical metric for the at least one metric related to the plurality of laser pulses. The device may determine that the statistical metric satisfies a threshold level of deviation of the at least one metric related to the plurality of laser pulses from a baseline value for the at least one metric. The device may indicate laser degradation of the Q-switched laser based on determining that the statistical metric satisfies the threshold.

Abstract: An immersion lithography apparatus is disclosed in which liquid is supplied to a space between a projection system and a substrate, and a plate structure is provided to divide the space into two parts. The plate structure has an aperture to allow transmission of the projection beam, has through holes in it to reduce the damping effect of the presence of the plate and optionally has one or more inlets and outlets to provide various flows around the aperture in the plate. An embodiment of the invention may reduce the transportation of contaminants, stray light, temperature gradients, and/or the effect of bubbles on the imaging quality.

Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

Abstract: An apparatus for transferring a wafer includes a main body, a first support installed in the main body, a sensor support fixed to the first support, a finger member slidably installed along the first support to transfer the wafer and positioned at a lower level than the sensor support, three sensors each including a light emitter installed on the first support and a light receiver installed on the sensor support, the three sensors respectively configured to detect three points of an edge of the wafer seated on the finger member, and a controller connected to the three sensors, wherein the controller is configured to determine whether any of the three points of the edge of the wafer is detected from a notch of the wafer based on signals received from the sensors.

Abstract: A localization microscope including an imaging device emitting sample light from a focal plane into an image plane, including an optical-manipulation device for depth-dependent influencing of a point-spread function of the imaging and influencing the point-spread function of the imaging such that a point emitter is imaged in the image plane into an image that is rotationally asymmetrically distorted. A form of the distortion depends on the location of the point emitter with respect to the focal plane and a wavelength of the sample light. The optical manipulation device includes first and second anisotropy elements that anisotropically influence the point spread function to produce rotational asymmetry of the point emitter image. The elements are arranged one behind the other in the imaging direction, with anisotropy axes at an angle to one another. Both elements have differing neutral wavelength at which they do not anisotropically influence the point spread.

Abstract: A carrying device and, a fixing method of a carrying device are provided. The carrying device includes a body and an electromagnet fixing module disposed on the body; wherein the electromagnet fixing module is configured to fix the carrying device. The present application uses the electromagnet fixing module to fix the carrying device, which can avoid downtime of an exposure machine caused by shaking of the carrying device when a robot arm of the exposure machine picks or places the mask form the carrying device so as to improve throughput.

Abstract: Embodiments and implementations of the present disclosure provide assistant pattern configuration methods, masks and forming methods thereof, and related devices.

Abstract: A microlithographic arrangement, for example using light in the extreme UV range, includes a supporting structure for supporting an optical unit, the mass of which can be 4 t to 14 t. The supporting structure includes a number of separate supporting units for supporting the optical unit. Each of the supporting units includes an air bearing unit by way of which a supporting force which counteracts the weight of the optical unit can be generated. The number of supporting units is at least four, at least two of the supporting units being coupled via a coupling device to form a supporting unit pair in such a way that the coupling device counteracts a deviation from a predeterminable ratio of the supporting forces of the two supporting units of the supporting unit pair.

Abstract: A system includes a plurality of masks and a scanner device. A pattern of a semiconductor device is defined by each of the plurality of masks in a photolithography process. A first mask of the plurality of masks includes a first identification code configured to distinguish the first mask from remaining masks of the plurality of masks. The scanner device is configured to read the first identification code to select the first mask from the plurality of mask, in order to form the pattern of the semiconductor device on a substrate according to the first mask.

Abstract: A lithographic apparatus comprising includes an object table which carries an object. The lithographic apparatus may further comprise at least one include a sensor as part of a measurement system to measure a characteristic of the object table, the environment surrounding the lithographic apparatus or another component of the lithographic apparatus. The measured characteristic may be used to estimate the a deformation of the an object due to a varying loads load during operation of the lithographic apparatus, for example a varying loads load induced by a two-phase flow in a channel formed within of the object table. Additionally, or alternatively, the The lithographic apparatus comprises may include a predictor to estimate the deformation of the object based on a model. The positioning of the object table carrying the object can be controlled based on the estimated deformation.

Abstract: A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.

Abstract: The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion clement for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.