Abstract: Apparatus for generating an optical pattern from image points in an image plane, including: a control unit; a micro-mirror array; an illumination unit controllable by the control unit; a focusing unit; the control unit being configured to control one or several micro-mirror groups formed of several micro-mirrors of the multitude of micro-mirrors such that the centroid beams reflected at the micro-mirrors of one of the micro-mirror groups meet in the image plane, and such that optical path lengths of the centroid beams reflected at the micro-mirrors of the respective micro-mirror group are equal from the illumination unit up to the image plane or differ by an integer multiple of a wavelength of the light beams in order to generate an image point of the image points in such a way.

Abstract: An exposure apparatus that projects a pattern of an original onto a substrate via a projection optical system and exposes the substrate is provided. The apparatus comprises an aberration correction member arranged on an optical path of exposure light between the original and the substrate, and a driver which drives the aberration correction member. The aberration correction member includes a first optical element including a first surface having a three-fold rotational symmetric aspherical shape with respect to an optical axis of the exposure light, and a second optical element spaced apart from the first optical element along the optical axis and including a second surface facing the first surface and having an aspherical shape that complementarily corrects an aberration generated by the first optical element.

Abstract: A vacuum chuck for clamping workpieces, in particular wafers, and a measuring device and a method for checking workpieces by way of X-ray fluorescent radiation. The vacuum chuck has a clamping plate having a support surface, having at least one suction connection arranged on a base body for connecting to a negative-pressure device and for clamping the workpiece on the clamping plate by negative pressure received by the base body and having several suction grooves arranged in the clamping plate and are open towards the support surface. The support surface has concentric suction grooves having a suction opening to which a negative-pressure line is connected or which is connected to a work channel. Each suction groove having a separate negative pressure, which is separate to the adjacent suction groove, is selectively controlled by a control valve by a control for supplying the respective negative pressure in the respective suction groove.

Abstract: In an optical system for a projection exposure apparatus, the angle space of the illumination radiation of the projection optical unit at the reticle is twice as large in a first direction as the angle space of the illuminating radiation of the illuminating optical unit.

Abstract: The present disclosure relates to an apparatus and a method for information processing enabling alignment between imaged images to be more accurately performed. With respect to a detection result of a correspondence point between an imaged image including a pattern irradiated for alignment with other imaged image, and the other imaged image including the pattern, an evaluation value with which an occurrence rate of an error in the alignment when the imaged image and the other imaged image are composed with each other is evaluated is calculated; and an irradiated position of the pattern is updated on the basis of the evaluation value calculated. The present disclosure, for example, can be applied to an information processing apparatus, an irradiation device, an imaging apparatus, an irradiation imaging apparatus, a controller, an imaging system or the like.

Abstract: A method for vertical control of a lithography machine includes step 1, prior to a scanning exposure, controlling vertical measurement sensors to measure workpiece to obtain overall surface profile data of the workpiece; step 2, performing a global leveling based on the overall surface profile data of the workpiece; and step 3, during the scanning exposure of each exposure field, measuring a local surface profile of the workpiece in real time by the vertical measurement sensors and controlling at least one of a mask stage, a workpiece stage and a projection objective to move vertically according to a Z-directional height value, an Rx-directional tilt value and an Ry-directional tilt value corresponding to the local surface profile of the workpiece, to compensate for the local surface profile of the workpiece in real time, so that an upper surface of each exposure field coincides with a reference focal plane for the exposure field.

Abstract: The disclosure relates to measuring a target. In one arrangement, a measurement apparatus is provided that has an optical system configured to illuminate a target with radiation and direct reflected radiation from the target to a sensor. A programmable spatial light modulator in a pupil plane of the optical system is programmed to redirect light in each of a plurality of pupil plane zones in such a way as to form a corresponding plurality of images at different locations on the sensor. Each image is formed by radiation passing through a different respective one of the pupil plane zones.

Abstract: An imprint apparatus forms a pattern on a substrate by curing an imprint material on the substrate while the imprint material is in contact with a mold. The imprint apparatus includes a substrate chuck having a substrate holding region for holding the substrate, a peripheral member arranged to surround the side surface of the substrate held by the substrate chuck, and a control unit configured to control a cleaning process for cleaning at least a partial region of the peripheral member by using a cleaning member including a charging unit. The cleaning process includes an operation for attracting a particle in the partial region to the charging unit by moving the cleaning member relative to the peripheral member while the charging unit faces at least the partial region of the peripheral member.

Abstract: Projection objective wave-front aberration detecting device and a detecting method thereof, wherein the projection objective wave-front aberration detecting device comprises a light source and illuminating system, an object plane grating, an object plane displacement stage, a measured projection objective, an image plane grating, a two-dimensional photoelectric sensor, an image plane displacement stage and a control processing unit. According to the invention, by controlling the length of the object plane grating line, or the periodic structure of the object plane grating perpendicular to the shearing diffraction direction, or the object plane grating to adopt a sinusoidal grating, or the image plane grating to adopt an amplitude-phase hybrid grating, the complexity of an interference field is reduced, and the wave-front aberration detection speed and precision are improved, and the precision and speed of in-situ wave-front aberration detection can be improved.

Abstract: Provided is an apparatus for measuring a wafer. The apparatus may include a chuck disposed on a stage and a plate connected with the stage, a horizontal frame configured to support a wafer, and a vertical frame connecting the plate and the horizontal frame. The apparatus may further include first to third adsorption portions connected with the horizontal frame and configured to adsorb the wafer, a support bar penetrating through the chuck and extending in a first direction and a beam irradiator connected to the support bar and disposed between the plate and the horizontal frame. The beam irradiator may be configured to irradiate a beam on the wafer. The apparatus may further include a detector on an opposite side of the horizontal frame from the beam irradiator and configured to receive the beam after it has penetrated through the wafer.

Abstract: There is provided an inspection apparatus provided with a plurality of inspection chambers for inspecting an electrical characteristic of a semiconductor device formed on a substrate, the inspection apparatus includes: a substrate chuck part configured to attractively hold the substrate during an inspection; a measurement part configured to measure an attractive force of the substrate chuck part in a state in which the substrate is placed on the substrate chuck part; and a controller configured to perform a first determination based on a first condition and a measurement result of the measurement part and a second determination based on a second condition different from the first condition and the measurement result of the measurement part, and configured to select one of a plurality of preset operations based on a result of the first determination and a result of the second determination and execute a process corresponding to the selected operation.

Abstract: A display device includes a display panel, a protective sheet at a rear side of the display panel, the protective sheet including an opening, a sensor in the opening, and a pattern in the display panel, the pattern overlapping the opening.

Abstract: According to one embodiment, an imprint apparatus includes a first light source positioned to irradiate a substrate with light, a second light source positioned to irradiate the substrate with light, an illuminance changing portion selectively configured to change the illuminance distribution of light from the first light source on an irradiation surface on the substrate, and a controller configured to control the first light source, the second light source and the illuminance changing portion to irradiate the substrate with light from the first light source, and to subsequently irradiate the substrate with light from the second light source directly through the template.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

Abstract: Provided are a laser annealing apparatus, a laser annealing method, and a mask with which scan nonuniformity can be decreased. According to the present invention, all or some openings of a plurality of openings are configured so that a partial subregion of a prescribed region is irradiated with laser light. The plurality of openings are configured so that, between prescribed regions irradiated with laser light via a group of openings in one row arranged in a row direction and prescribed regions irradiated with laser light via a group of openings in another row arranged in the row direction, the number of times of laser light radiations in subregions having the same occupying region is the same, and at least two openings of a group of openings arranged in a column direction have different positions or shapes.

Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.

Abstract: An apparatus and method for controlling temperature of a patterning device in a lithographic apparatus, by flowing gas across the patterning device. A patterning apparatus includes: a patterning device support structure configured to support a patterning device; a patterning device conditioning system including a first gas outlet configured to provide a gas flow over a surface of the patterning device and a second gas outlet configured to provide a gas flow over a part of a surface of the patterning device support structure not supporting the patterning device; and a control system configured to separately control the temperature of the gas exiting the first and second gas outlets such that the gas exiting the second gas outlet is at a higher temperature than the gas exiting the first gas outlet and/or to separately control the temperature and gas flow rate of the gas exiting the first and second gas outlets.

Abstract: Lithographic exposure tool and method for operating thereof are provided that includes modification of the tool (assessed based on the measurements of geometrical distortions caused, in the tool, by the exposure process and used to train the exposure tool) to ensure that such geometrical distortions are reduced for any chosen exposure process. The method includes processing first data (representing distortions caused by initial exposure run(s)) to estimate second data (representing distortions that would occur for another exposure run); and forming a modified exposure tool by changing at least one of a) a geometrical path or a path along which the workpiece stage is repositioned during the operation of the exposure tool; b) one or more of a presence, position, orientation, size and shape of an optical component of an optical projection sub-system of the optical system of the exposure tool; and c) a parameter of scanning synchronization of the exposure tool.

Abstract: Embodiments of the present disclosure provide improved photolithography systems and methods using a solid state emitter device. The solid state emitter device includes an array of solid state emitters arranged in a plurality of horizontal rows and vertical columns. The variable intensity of each group of solid state emitters, for example an entire row or column of solid state emitters, is controllable for improved field brightness uniformity and stitching. Controlling the variable intensity includes, for example, varying the signal, such as voltage, that is applied to each of the rows of solid state emitters to attenuate the brightness from the middle of the array to the edges of the array to accommodate for overlapping exposures during photolithography processing.

Abstract: A control equipment and a control method of a stepper are provided. The control equipment of the stepper includes an input device, a generating device and a processing device. The input device is configured to input a plurality of sample development patterns. The sample development patterns are obtained according to a plurality of sample focal length values. The generating device is configured to generate a plurality of generative categories corresponding to a plurality of generative focal length values by using a depth learning algorithm. The processing device is configured to analyze an estimated focal length value of the online development pattern according to the generative categories.

Abstract: A spectroscopic overlay metrology system and corresponding spectroscopic overlay metrology methods are disclosed herein for improving overly measurement accuracy, optimizing overlay recipes, and/or minimizing (or eliminating) asymmetry-induced overly error from overlay measurements. An exemplary method includes generating a diffraction spectrum by an overlay target from incident radiation having more than one wavelength. The diffraction spectrum includes a plurality of positive ordered diffracted beams and a plurality of negative ordered diffracted beams that are separated by wavelength, such that the diffraction spectrum includes more than one wavelength of a positive order and a negative order.

Abstract: Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.

Abstract: A levellable reticle library assembly includes a reticle library assembly (4), a pivot assembly (3) and a frame assembly (2). The reticle library assembly (4) is disposed on the frame assembly (2) so that it is able to be leveled by the pivot assembly (3) via the frame assembly (2), and the reticle library assembly (4) can also be leveled by the frame assembly (2).

Abstract: A substrate processing system to process a substrate includes a sensor to generate sensed values of a parameter of the substrate processing system. An actuator adjusts the parameter of the substrate processing system. A controller communicates with the sensor and the actuator and is configured to process a first substrate using the sensed values to adjust control values for controlling the actuator without feedforward control during a process. The sensed values are delayed and cause instability in the parameter. The controller is further configured to automatically calibrate feedforward values for processing a second substrate based on the sensed values and the control values and process the second substrate while controlling the actuator using the feedforward values.

Abstract: A pattern forming apparatus configured to form a pattern on a substrate includes a holding portion configured to hold the substrate by suction, an optical system configured to detect, from a suction surface side of the substrate, an alignment mark provided to the substrate held by the holding portion, and a unit configured to shield light entering the optical system.

Abstract: Methods of determining, and using, a patterning process model that is a machine learning model. The process model is trained partially based on simulation or based on a non-machine learning model. The training data may include inputs obtained from a design layout, patterning process measurements, and image measurements.

Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.

Abstract: A lens unit is provided that includes: a first lens that is housed inside a lens-barrel, the first lens including a first lens section and a first flange section that juts out from the first lens section in a direction orthogonal to an optical axis direction; a second lens that is housed inside the lens-barrel further toward an imaging plane side than the first lens, the second lens including a second lens section and a second flange section that juts out from the second lens section in a direction orthogonal to the optical axis direction; and a spacing ring that is sandwiched between the first lens and the second lens and that defines a spacing between the first lens and the second lens, the spacing ring includes a main body disposed between the first flange section and the second flange section in the optical axis direction, first protrusion portions that protrude in the optical axis direction from an object side of the main body, and second protrusion portions that protrude in the optical axis direction fr

Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.

Abstract: A microscope (10) is described, comprising an autofocus system (11) for executing a focusing procedure, having a first image sensor (14a), arranged in a first outcoupled beam path (12a), for acquiring a first image (16a); and a second image sensor (14b), arranged in a second outcoupled beam path (12b), for acquiring a second image (16b). The autofocus system (11) is embodied in such a way that the focusing procedure is executable on the basis of at least a first operating mode and a second operating mode.

Abstract: A microscope (10) is described, having an autofocus system (11) for executing a focusing procedure, having a first image sensor (14a), arranged in a first outcoupled beam path (12a), for acquiring a first image (16a); and a second image sensor (14b), arranged in a second outcoupled beam path (12b), for acquiring a second image (16b). The autofocus system (11) is embodied to adjust a relative location of the focal plane (20) with respect to the object plane (22), at a focus displacement speed, during the image acquisition time for acquisition of the first image (16a) acquired by the first image sensor (14a) and of the second image (16b) acquired by the second image sensor (14b), the focus displacement speed being equal to the ratio of an increment to the image acquisition time, and the increment being larger than the depth of focus of the microscope (10).

Abstract: An optical measurement device includes: a deformation measurement device for measuring magnitude of deformation of an optical detection platform frame, and a correction module for correcting the position of a substrate carrier and/or the position of an optical detection device according to the magnitude of deformation of the optical detection platform frame, so as to eliminate an error in measurement of mark positions due to deformation of the frame. An optical measurement method is also disclosed.

Abstract: To provide a cleaning apparatus advantageous for cleaning, for example, an original plate used to transfer a pattern to a substrate. Provided is a cleaning apparatus that cleans an original plate used when a pattern is transferred to a substrate, the cleaning apparatus including a region dividing unit which divides the original plate into a plurality of regions on the basis of information of the original plate, a conditions generator which generates cleaning conditions for each of the separate regions, and a cleaner which cleans the original plate on the basis of the cleaning conditions.

Abstract: A lithographic apparatus is provided. The lithographic apparatus includes a reticle and an electrostatic clamp configured to releasably hold the reticle. The electrostatic clamp includes a first substrate having opposing first and second surfaces, a plurality of burls located on the first surface and configured to contact the reticle, a second substrate having opposing first and second surfaces. The first surface of the second substrate is coupled to the second surface of the first substrate. A plurality of cooling elements are located between the first surface of the second substrate and the second surface of the first substrate. The cooling elements are configured to cause electrons to travel from the second surface of the first substrate to the first surface of the second substrate. Each cooling element is substantially aligned with a respective burl.

Abstract: Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. In one embodiment, an illumination tool includes a microLED array including one or more microLEDs. Each microLED produces at least one light beam. The illumination tool also includes a beamsplitter adjacent the microLED array, a camera adjacent the beamsplitter, and a projection optics system adjacent the beamsplitter.

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

Abstract: An imaging module, including a lens and a transmissive display panel disposed adjacent to each other, and a controller electrically connected to the transmissive display panel, the controller loading a white image on a preset area of the transmissive display panel so that a light beam passes through the preset area. A light beam gating control method, a testing apparatus and method for an imaging module are further provided.

Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.

Abstract: A coaxial reticle alignment device, a lithography apparatus and alignment methods are disclosed. The coaxial reticle alignment device includes: illumination modules (A, B), each configured to provide an alignment light beam; a projection objective (8) under a reticle (5); a reference plate (9) on a workpiece stage (12), configured to carry a reference mark (10); and an image detection and processing module (11) under the reference plate (9).

Abstract: A imprint method includes contacting the pattern formed on the mold M with the imprint material R supplied to a shot on the substrate W; and detecting a plurality of alignment marks AMM and AMW in the contacting while changing a position of a detector for detecting the plurality of alignment marks AMM and AMW formed on the shot on the substrate W in accordance with a progress of filling of the imprint material R into the pattern formed on the mold M.

Abstract: Provided is a sample observation method including: bringing a gel-like transparent sample that encloses an observation target into contact with a transparent flat surface section of a substrate; and collecting light from the observation target by means of an objective lens via the substrate, in a state in which a pressing force is made to act in a direction in which the sample and the flat surface section relatively approach each other, until the contact area between the sample and the flat surface section comes to have a size allowing an effective light flux for the objective lens of a microscope to pass therethrough.

Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

Abstract: An optical imaging arrangement includes an optical projection system, a support structure system and a control device. The optical projection system includes a group of optical elements supported by the support structure system and configured to transfer, in an exposure process using exposure light along an exposure light path, an image of a pattern of a mask onto a substrate. The group of optical elements includes a first optical element and a second optical element and the control device includes a sensor device and an active device. The sensor device is functionally associated to the first optical element and is configured to capture mechanical disturbance information representative of a mechanical disturbance acting on the first optical element in at least one degree of freedom up to all six degrees of freedom.

Abstract: An exposure device may include an exposure head that may radiate an exposure beam onto a substrate on a stage, a support that may be provided on the stage to support the exposure head, a chamber that may accommodate the stage, the exposure head, and the support. The exposure device may include first protrusions that may be disposed on an outer circumference of the support adjacent to an inner wall of the chamber, and second protrusions that may be disposed on the inner wall of the chamber surrounding the outer circumference of the support. The first and second protrusions may overlap each other in a plan view.

Abstract: Disclosed are a system and method for micro-nano machining by femtosecond laser two-photon polymerization. The system includes: a femtosecond laser, an external light path modulation unit, an image capture apparatus, a focusing lens, a displacement platform, a computer and a monitoring apparatus, where the image capture apparatus is configured to capture cross-section graphs of a three-dimensional micro-nano device layer by layer, so that modulated femtosecond lasers form parallel beams arranged according to all layers of the cross-section graphs.

Abstract: A method and a system for filtering thermal image data. The method comprises: capturing thermal image data by a thermal image detector; forming a signal distribution of intensity values; identifying a first part in the signal distribution of intensity values, the first part being a peak having an intensity width equal to or smaller than a predetermined intensity span being based on a resolution parameter of the thermal image detector; identifying a second part having an intensity width larger than the predetermined intensity span; determining an intensity range between the first part and the second part; and filtering, if the intensity range is larger than a predetermined minimum intensity range, the thermal image data by excluding thermal image data forming part of the first part.

Abstract: A microscope (10) is described, having an autofocus system (11) for executing a focusing procedure, having a first image sensor (14a), arranged in a first outcoupled beam path (12a), for acquiring a first image (16a); and a second image sensor (14b), arranged in a second outcoupled beam path (12b), for acquiring a second image (16b). The autofocus system (11) is embodied to ascertain a contrast difference based on contrast values of the first image (16a) acquired by the first image sensor (14a) and of the second image (16b) acquired by the second image sensor (14b), and to set a relative location of the focal plane (20) with respect to the object plane (22) based on the ascertained contrast difference, the first and the second image (16a, 16b) each encompassing image information furnished by the first and the second image sensor (14a, 14b) each embodied as an area sensor.

Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

Abstract: An exposure apparatus includes a projection optical system configured to project a pattern of a mask onto a substrate, a substrate stage configured to hold and move the substrate, and a controller configured to control exposure of the substrate held by the substrate stage, wherein the controller obtains an amount of deviation of an image of the pattern projected onto the substrate with respect to the pattern of the mask based on telecentricity information, which is information on telecentricity for respective image heights of the projection optical system, and height information, which is information on the height of a surface of the substrate, and corrects deviation of the image based on the obtained amount of deviation to expose the substrate.

Abstract: A wafer holding apparatus for holding a wafer including a wafer holder on which the wafer is placed; and a lift pin that is configured to be lifted up and down with respect to the wafer holder in a direction along a normal line of a placement surface of the wafer, the lift pin includes a tip part, the tip part includes: a bottom part that forms a suction region for sucking a rear surface of the wafer; and a convex part that supports the rear surface of the wafer in the suction region. When a substrate is placed on a target position, it is possible to prevent a local deterioration of flatness of the substrate even if the substrate is large.