Abstract: An exposure apparatus includes a control unit configured to calculate a target exposure amount distribution in a scanning direction within the target shot region using a target exposure amount at a position in the target shot region and a target exposure amount at a position in an adjacent shot region adjacent to the target shot region in the scanning direction and configured to perform a scan exposure for the target shot region while controlling an exposure amount according to scanning of the substrate so as to obtain the calculated target exposure amount distribution as an exposure amount distribution in a scanning direction within the target shot region.

Abstract: Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70° and 270°. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.

Abstract: A charged particle beam writing apparatus, includes a unit to input information about a stripe region height, and to judge, when a write region is divided into stripe regions in a thin rectangular shape by the stripe region height, whether a height of a last stripe region is narrower than the stripe region height; and a unit to divide the write region into stripe regions in the thin rectangular shape in such a way that the last stripe region and a stripe region prior to the last stripe region are combined to create one stripe region and stripe regions at least two stripe regions prior to the last stripe region are each created as stripe regions of the stripe region height if the height of the last stripe region is narrower than the stripe region height.

Abstract: An immersion lithographic projection apparatus is disclosed in which liquid is provided between a projection system of the apparatus and a substrate. The use of both liquidphobic and liquidphilic layers on various elements of the apparatus is provided to help prevent formation of bubbles in the liquid and to help reduce residue on the elements after being in contact with the liquid.

Abstract: A projection exposure tool (10) for microlithography with a measuring apparatus (36) disposed in an optical path (28) of the projection exposure tool (10) for the locally and angularly resolved measurement of an irradiation strength distribution. The measuring apparatus (36) includes a measuring field with an arrangement (56) of focusing optical elements (42) disposed at respective individual points of the measuring field (41), a common image plane (44) for the focusing optical elements (42), a locally resolving radiation detector (46) with a recording surface (48) for the locally resolved recording of a radiation intensity, the recording surface (48) being disposed in the common image plane (44), and the radiation detector outputting radiation intensity signals for a plurality of angle values indicative of a respective angularly resolved irradiation strength distribution for at least one of the individual measuring field points.

Abstract: A defocus calibration module is applied in a light-sensing system for sensing a measured object to generate a sensed image. The light-sensing system contains a light-emitting component, a focusing component, and an image sensor. The light-emitting component emits a detecting light to the measured object so that the measured object generates a reflecting light. The focusing component focuses the reflecting light to the image sensor, and the image sensor generates the sensed image according to the reflecting light. The defocus calibration module has a calibrating object for blocking a part of the detecting light and the reflecting light for forming images at a first and a second calibration imaging locations in the sensed image. In this way, the defocus calibration module calculates a defocus parameter representing the defocus level of the light-sensing system according to the first and the second calibration imaging locations, and accordingly calibrates the sensed image.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

Abstract: An exposure device includes: a light source (LS) which emits a pulse light; and a variable shaped mask (8) which has a plurality of aligned micro movable mirrors and forms an arbitrary pattern by selectively changing the operation state of the movable mirrors. A substrate (P) is exposed to the light emitted from the light source and passes through the variable shaped mask. The exposure device further includes a control device (100) which controls the operation timing to change the operation state of the movable mirrors and the pulse application timing of the pulse light emitted from the light source so that they are synchronized.

Abstract: This disclosure relates to lithography using pulsed laser illumination. In particular it relates to lithography for producing electronic devices on wafers using multi-mode excimer and molecular lasers, e.g. KrF, ArF, and F2 lasers. It may also apply to illumination systems where several single-mode sources are mixed or one single-mode laser beam is split and recombined with time delays, thereby creating an equivalent multimode source and to EUV lithography. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: A method for arranging an optical module in a measuring apparatus includes: providing the measuring apparatus with an irradiation system for irradiating the optical module with electromagnetic radiation, a reference component, and a detection element defining a detection surface, the detection element being disposed in a defined position in relation to the reference component, disposing the optical module in the measuring apparatus such that the radiation emitted by the irradiation system passes through the optical module and impinges onto the detection surface as an exit beam, measuring a position of the exit beam in relation to the detection surface, adjusting the position of the optical module within the measuring apparatus such that the position of the exit beam in relation to the detection surface is brought to correspond to a predetermined position, and establishing position parameters defining the position of the optical module in relation to the reference component.

Abstract: A measurement apparatus, which measures a wavefront aberration of an optical system to be measured, comprises: a calculation unit configured to calculate the wavefront aberration based on an interference fringe generated by light which passed through the optical system to be measured; and a determination unit configured to calculate an evaluation value indicating a wavefront state based on the wavefront aberration calculated by the calculation unit, and determine the calculated wavefront aberration as the wavefront aberration of the optical system if the evaluation value falls within an allowable range.

Abstract: A lithography apparatus includes a projection system configured to project a radiation beam onto a substrate, a detector configured to inspect the substrate, and a substrate table configured to support the substrate and move the substrate relative to the projection system and the detector. The detector is arranged to inspect a portion of the substrate while the substrate is moved and before the portion is exposed to the radiation beam.

Abstract: An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument.

Abstract: The disclosure relates to a method for compensating image errors, generated by intensity distributions in optical systems, such as in projection lens arrays of microlithography systems, and to respective optical systems, such as projection lens arrays of microlithography systems.

Abstract: A part of exposure beam through a liquid(LQ) via a projection optical system(PL) enters a light-transmitting section(44), enters an optical member(41) without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a stage configured to move the substrate; and a sensor unit which is arranged on the stage and configured to receive light having passed through the projection optical system, the sensor unit including an aperture plate which is configured to be used in measuring different optical performances, and on which a plurality of aperture patterns with different shapes or different sizes are formed, and a photoelectric conversion device configured to photoelectrically convert the light beams from the plurality of aperture patterns.

Abstract: A substrate stage for an immersion type lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate, the substrate stage being constructed to hold the substrate and including at least a sensor for sensing the patterned radiation beam, the sensor including an at least partially transmissive layer having a front side facing the incoming radiation beam and a back side opposite the front side, wherein the back side is provided with at least a sensor mark to be subjected to the radiation beam transmitted through the layer.

Abstract: An exposure apparatus includes an optical path in which a plurality of optical units are arranged and which includes a portion of projecting a pattern of an original onto a substrate to expose the substrate to light, and a controller configured to monitor deteriorations, due to light, of the plurality of optical units, wherein the controller is configured to monitor each of a plurality of sections of the optical path each of which includes at least one optical unit, for deterioration of the at least one optical unit belonging to a corresponding section.

Abstract: The present invention provides an exposure apparatus comprising an illumination optical system configured to illuminate a reticle with a light beam from a light source, and a projection optical system configured to project a pattern of the reticle onto a substrate, the illumination optical system including a light amount adjusting unit configured to adjust an amount of the light beam, a polarization adjusting unit configured to adjust a polarization state of the light beam, and a beam splitter configured to split the incident light beam into two light beams, wherein the light amount adjusting unit, the polarization adjusting unit, and the beam splitter are set in an order from the light source side.

Abstract: A method that includes conditioning a radiation beam, imparting the radiation beam with a pattern to form a patterned radiation beam by a reticle having a pattern image area and a reticle mark, and projecting the patterned radiation beam onto a target portion of a substrate by a projection system. The method further includes illuminating the reticle mark by the radiation beam for generating an aerial image of the reticle, projecting the aerial image on an image sensor, collecting image data from the image sensor, obtaining from the image data positional parameters of the aerial image, and correcting any deviation of the positional parameters from a required position of the aerial image by compensating an illumination induced thermal expansion of the reticle by an estimated correction of magnification settings of the projection system, the estimated correction being calculated from a prediction of the temporal thermal expansion of the reticle.

Abstract: An exposure apparatus includes a light dividing surface which reflects a certain component of the light beam bifurcated by an illumination optical system, and transmits the remaining component of the light beam, a first photoelectric conversion element which detects the light beam transmitted through the light dividing surface, a second photoelectric conversion element which detects the light beam reflected by the light dividing surface, and a controller which controls the light beam which becomes incident on the substrate, using the outputs from the first photoelectric conversion element and the second photoelectric conversion element while the light emitted by a light source is in a first polarization state, and the outputs from the first photoelectric conversion element and the second photoelectric conversion element while the light emitted by the light source is in a second polarization state.

Abstract: A controller measures positional information of a stage within an XY plane using three encoders which at least include one each of an X encoder and a Y encoder of an encoder system, and the stage is driven in the XY plane, based on measurement results of the positional information and positional information (p1, q1), (p2, q2), and (p3, q3) in a surface parallel to the XY plane of a head (an encoder) used for measurement of the positional information. Accordingly, it becomes possible to control the movement of the stage with good precision, while switching the head (the encoder) used for control during the movement of the stage using the encoder system which includes a plurality of heads.

Abstract: A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system including an optical element of which at least one of a position, orientation, and shape can be regulated, a regulator configured to regulate the at least one of the position, orientation, and shape of the optical element, and a controller configured to calculate, using quadratic programming, a regulation amount of the optical element that minimizes a value of an objective function expressed by a first dummy variable serving as an upper limit of a linear optical characteristic value of the projection optical system, and a second dummy variable serving as an upper limit of a quadratic optical characteristic value of the projection optical system, and to control the regulator based on the calculated regulation amount.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support configured to support a patterning device, the patterning device being configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table configured to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the radiation beam is reflected from at least one grazing incidence mirror that enhances the spectral purity of the radiation beam.

Abstract: A method of evaluating an exposure optical beam source of an exposure device used in an exposure process in manufacturing a semiconductor device is disclosed, in which the method includes dividing an exposure optical beam source into a plurality of unit optical beam sources in a unit size determined by an exposure device, acquiring a difference between an evaluation amount of a target pattern on a semiconductor substrate when a unit optical beam source is turned on and an evaluation amount of the target pattern on the semiconductor substrate when the unit optical beam source is turned off, and evaluating the exposure optical beam source by using the acquired difference as an index.

Abstract: In an exposure system and semiconductor device manufacturing method relating to the present invention, an image of spatial image mark body through a reduction projection lens is projected onto a spatial image projection plate arranged on a wafer stage by irradiating the spatial image mark body arranged on a reticle stage with an exposure light. The spatial image mark body has a plurality of spatial image marks arranged in a same plane. At projection positions of images of each spatial image mark on the spatial image projection plate, spatial image openings are equipped with differing positions in an optical axis direction of the exposure light. A focus curve with a single exposure can be obtained, without moving the wafer stage in the optical axis direction, by respective measurements of optical intensities of images of each spatial image mark through each opening thereby enabling to calculate the best focus position.

Abstract: An exposure system including a first laser light source, a second laser light source, a focusing module, an astigmatism generating element, and a photo detector, and an adjustment method thereof are provided. The first laser light source emits a first laser beam. The second laser light source emits a second laser beam. The focusing module includes a light converging unit disposed on transmission paths of the first laser beam and the second laser beam for projecting the first laser beam and the second laser beam onto a material. The material reflects at least a part of the first laser beam into a first reflective beam. The light converging unit and the astigmatism generating element are disposed on the transmission path of the first reflective beam. The photo detector is disposed on the transmission path of the first reflective beam from the astigmatism generating element.

Abstract: A lithographic apparatus configured to apply corrections to the dose, within and/or between fields, to compensate for critical dimension variations due to heating of elements of the projection system is disclosed.

Abstract: The disclosure relates to microlithography systems, such as EUV micro-lithography illumination systems, as well as related components, systems and methods.

Abstract: A lithographic apparatus (2) can include a radiation source (SO) configured to provide radiation (200), a radiation collector (CO) configured to collect radiation (200) from the radiation source (SO), an illumination system (IL), and a detector (300). The detector (300) can be disposed in a fixed positional relationship with the illumination system (IL) relative to an alignment of the collector (CO). Further, a region (310) of the collector (CO) can be configured to direct a portion of radiation (200) emanating from the radiation source (SO) and traversing the region (310) towards the detector (300). The detector (300) can be configured to detect a change in a portion of the radiation (200). The change can be indicative of a change in position or orientation of the collector (CO) relative to the illumination system (IL) relative to an alignment of the collector (CO).

Abstract: The disclosure relates to microlithography systems, such as EUV microlithography illumination systems, as well as related components, systems and methods.

Abstract: An illumination source senses a level of ambient light and determines an illumination waveform to be used to illuminate at least a portion of a document. The rise and the fall time of the illumination waveform are independently controlled.

Abstract: A lithographic apparatus includes a source module that include a collector and a radiation source. The collector is configured to collect radiation from the radiation source. An illuminator is configured to condition the radiation, collected by the collector and to provide a radiation beam. A detector is disposed in a fixed positional relationship with respect to the illuminator. The detector is configured to determine a position of the radiation source relative to the collector and a position of the source module relative to the illuminator.

Abstract: An exposure apparatus which illuminates a reticle with illumination light from a light source and projects light from the reticle onto a substrate to expose the substrate to light is disclosed. The apparatus comprises a shutter located on a path of the illumination light, a detector configured to detect a dose to the substrate, and a controller configured to control operation of the shutter. In a first exposure mode which uses illumination light with a first light intensity, the controller controls an open time of the shutter based on an output from the detector, and to store the open time. In a second exposure mode which uses illumination light with a second light intensity higher than the first light intensity, the controller controls a speed of the shutter based on the stored open time.

Abstract: A measurement apparatus configured to measure a light intensity distribution in a plane to be measured includes a mask including an opening having a dimension smaller than a wavelength of light for forming the light intensity distribution, and a light-shielding portion being configured to substantially shield the light; a first photoelectric conversion element configured to receive the light passing through the opening and output a light intensity signal; and a second photoelectric conversion element arranged at a position apart from the first photoelectric conversion element, and configured to receive the light transmitted through the light-shielding portion and output a light intensity signal. The mask, and the first and second photoelectric conversion elements are moved along the plane to be measured. The light intensity distribution in the plane to be measured is calculated on the basis of the light intensity signals respectively output from the first and second photoelectric conversion elements.

Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.

Abstract: A system and method provides high speed variable attenuators. The attenuators can be used within a lithographic apparatus to control intensity of radiation in one or more correction pulses used to correct a dose of the radiation following an initial pulse of radiation.

Abstract: An exposure apparatus comprising a projection optical system configured to project a pattern image of an original onto a substrate, and a sensor configured to detect light emerging from the projection optical system, the sensor including a light receiving element having a light receiving surface, and an optical member having a reflection surface which reflects the light emerging from the projection optical system toward the light receiving surface, wherein the reflection surface forms an acute angle with respect to the light receiving surface.

Abstract: The present invention has disclosed a method for in-situ aberration measurement in an optical imaging system of lithographic tools, which comprises the steps of: imaging the reticle pattern by the beams transmitting through the reticle via the optical imaging system; using particular tools to measure plural groups of linewidths by modifying the intensity distribution at the exit pupil plane of the optical imaging system; calculating the asymmetry and ununiformity of the linewidths and calculating the aberrations of the optical imaging system. The present method for aberration measurement can simplify the process of measurement; increase the measurement accuracy of the parameters of image quality; and reduce the time of measurement.

Abstract: Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.

Abstract: Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) sources used in semiconductor fabrication are disclosed. A method comprises providing a semiconductor fabrication apparatus having a light source that emits in-band and out-of-band radiation, taking a first out-of-band radiation measurement, taking a second out-of-band radiation measurement, and controlling the in-band radiation of the light source, at least in part, based upon a comparison of the first and second out-of-band measurements. An apparatus comprises a detector operable to detect out-of-band EUV radiation emitted by an EUV plasma source, a spectrometer coupled to the electromagnetic detector and operable to measure at least one out-of-band radiation parameter based upon the detected out-of-band EUV radiation, and a controller coupled to the spectrometer and operable to monitor and control the operation of the EUV plasma source based upon the out-of-band measurements.

Abstract: A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

Abstract: A system and method provides high speed variable attenuators. The attenuators can be used within a lithographic apparatus to control intensity of radiation in one or more correction pulses used to correct a dose of the radiation following an initial pulse of radiation.

Abstract: An optical control device includes a semiconductor laser that generates a light according to a drive current, a light amount detecting unit that detects a light amount of the light generated by the semiconductor laser; and a controller that controls the drive current to adjust the light amount to a target value by referring to a referring number of detection results of the light amount by the light amount detecting unit. The referring number at a time when the controller starts the drive current flowing is smaller than the referring number after the detection result of the light amount reaches a predetermined value.

Abstract: A projection exposure tool (10) for microlithography with a measuring apparatus (36) disposed in an optical path (28) of the projection exposure tool (10) for the locally and angularly resolved measurement of an irradiation strength distribution. The measuring apparatus (36) includes a measuring field with an arrangement (56) of focusing optical elements (42) disposed at respective individual points of the measuring field (41), a common image plane (44) for the focusing optical elements (42), a locally resolving radiation detector (46) with a recording surface (48) for the locally resolved recording of a radiation intensity, the recording surface (48) being disposed in the common image plane (44), and the radiation detector outputting radiation intensity signals for a plurality of angle values indicative of a respective angularly resolved irradiation strength distribution for at least one of the individual measuring field points.

Abstract: There is disclosed an evaluation method for evaluating a one-dimensional illumination distribution using polynomials, the method comprising steps of: setting up, as the polynomials, one-dimensional power polynomials which are orthogonal in a closed interval; and approximating the one-dimensional illumination distribution with the power polynomials to obtain the coefficients of respective terms of the power polynomials.

Abstract: A surface shape measurement apparatus is configured to measure a surface shape of an object to be measured, and includes a beam splitter configured to split white light from a light source into two light beams, a pair of prisms each configured to increase an incident angle of each light beam that has been split by the beam splitter and directed to the object or a reference surface, each prism having an antireflection part that is formed at a period of a wavelength of the white light or smaller and has a moth-eye shape, a superimposition unit configured to superimpose object light from the object with reference light from the reference surface and has passed the second prism, and to generate white interference light, and a Lyot filter configured to discretely separate the white interference light for each of a plurality of wavelengths.

Abstract: A measurement apparatus which measures spatial coherence in an illuminated plane illuminated by an illumination system, comprises a measurement mask which has at least three pinholes and is arranged on the illuminated plane, a detector configured to detect an interference pattern formed by lights from the at least three pinholes, and a calculator configured to calculate the spatial coherence in the illuminated plane based on a Fourier spectrum obtained by Fourier-transforming the interference pattern detected by the detector.

Abstract: A measurement apparatus which illuminates a pattern positioned on an object plane to form an aerial image 40 on an image plane and measures a light intensity distribution of the aerial image 40 via a slit 54 on the image plane, the measurement apparatus including a stage 60 moving the slit, a light receiving element 53 mounted on the stage 60 and including at least two light receiving portions which receive the light transmitted through the slit, a storage unit which stores a relationship between an angle ? and a distance between a center position of the slit 54 and a position where a intensity of light that the light receiving element 53 receives is maximum, a calculation unit which obtains the angle ?, and a stage driving unit 80 which rotates the stage 60 so that the angle ? is equal to zero.