Abstract: A position control system configured to control the position of a movable object, includes: a position measurement system configured to determine a position of a sensor or sensor target on the movable object, a comparator configured to provide an error signal by comparing a set-point position and a position feed-back signal based on the measured position, a controller to provide a control signal based on the error signal, a feed-forward device to provide a feed-forward signal on the basis of a first signal related to the desired position, and one or more actuators configured to act on the movable object based on the control signal and the feed-forward signal, wherein the position control system further includes a compliance compensation device providing a compliance compensation signal, wherein the compliance compensation signal is subtracted from a measured position of the position measurement system to obtain the feed-back position signal.

Abstract: A microlithographic projection exposure apparatus (1) comprises an illumination system (4) with an illumination optics (5) for illuminating an illumination field in a reticle plane (6). The illumination optics (5) further includes a light distribution device (12a) which comprises a light deflection array (12) of separate elements and an optical assembly (21, 23 to 26) which converts the light intensity distribution defined by the light distribution device (12a) in a first plane (19) of the illumination optics (5) into an illumination angle distribution in the reticle plane (6). Downstream of an output coupling device (17), which is arranged in the light path between the light deflection array (12) and the reticle plane (6), a space and time resolving detection device (30) is exposed to outcoupled illumination light (31) in such a way that the detection device (30) detects a light intensity distribution corresponding to the light intensity distribution in the first plane (19).

Abstract: A measurement apparatus which measures a surface position of an object comprises a first measurement device configured to make measurement light from the object and reference light from a reference mirror interfere with each other on a light receiving surface of a photo-electric conversion device to form an interference pattern, and photo-electrically convert the interference pattern by the photo-electric conversion device to output an interference signal, a second measurement device configured to measure the surface position of the object, and an arithmetic processing unit configured to detect the surface position of the object based on a peak, of the interference signal, which is ensured to be a peak of a central fringe according to the measurement result obtained using the second measurement device.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: An exposure apparatus includes a light source; an illumination optical system that illuminates an original with the light; a substrate stage that holds and moves a substrate; a projection optical system that projects the light from the original, the projection optical system and the substrate having therebetween a first gap filled with liquid for exposure of the substrate; a first detector that detects a light quantity of light and passing along a light path of the illumination optical system; a second detector disposed on the substrate stage, to detect a light quantity of light transmitted through the illumination optical system and the projection optical system; and a calculator that determines a first conversion factor with respect to each of the plurality of exposure conditions used for conversion between a light quantity detected by the second detector with gas and a light quantity detected by the second detector with the liquid.

Abstract: The present invention provides an exposure apparatus including a position detection apparatus that detects at least one of a position of a reticle and a position of a substrate. The position detection apparatus includes an optical member whose position can be changed, a photoelectric conversion device that receives light from a mark and outputs a detection signal, and a control unit that controls the position of the optical member based on information on a first evaluation value representing a symmetry of a waveform of the detection signal at each of a plurality of positions of the optical member and information on a second evaluation value representing a position shift of the mark detected upon changing a position of the mark in an optical axis direction of an optical system at each of the plurality of positions of the optical member.

Abstract: An optical unit comprises a first optical path in which a spatial light modulator with a plurality of optical elements arranged two-dimensionally and controlled individually can be arranged; a second optical path including a mechanism for insertion of an angle distribution providing element including a predetermined fixed pattern on a surface thereof; and a third optical path being an optical path of light having traveled through both of the first optical path and the second optical path. When the angle distribution providing element is inserted in the second optical path, an angle distribution is provided to light exited based on light incident to the angle distribution providing element.

Abstract: Embodiments of the invention relate to a device for transmission image detection for use in a lithographic projection apparatus. In an embodiment, the device includes an array of gratings and an array of radiation sensitive sensors, each of which is arranged to receive radiation coming through one of the gratings. The array of radiation sensitive sensors may be a 1-dimensional diode array.

Abstract: The disclosure relates to a method for compensating image errors, generated by intensity distributions in optical systems, such as in projection lens arrays of microlithography systems, and to respective optical systems, such as projection lens arrays of microlithography systems.

Abstract: An ion beam irradiating apparatus has: a beam profile monitor 14 which measures a beam current density distribution in y direction of an ion beam 4 in the vicinity of a target 8; movable shielding plate groups 18a, 18b respectively having plural movable shielding plates 16 which are arranged in the y direction so as to be opposed to each other across an ion beam path on an upstream side of the position of the target, the movable shielding plates being mutually independently movable in x direction; shielding-plate driving devices 22a, 22b which reciprocally drive the movable shielding plates 16 constituting the groups, in the x direction in a mutually independent manner; and a shielding-plate controlling device 24 which, on the basis of measurement information obtained by the monitor 14, controls the shielding-plate driving devices 22a, 22b to relatively increase an amount of blocking the ion beam 4 by the opposed movable shielding plates 16 which correspond to a position where a measured y-direction beam curr

Abstract: A method and apparatus make use of data representing changes in wavelength of a radiation source to provide control of focal plane position or to provide correction of sensor data. In the first aspect, the wavelength variation data is provided to control systems that control focus by moving apparatus components including, for example, the mask table, the substrate table or optical elements of the projection optical system. In the second aspect, variation data is used in correcting, e.g., focal plane position data measured by a transmitted image sensor. The two aspects may be combined in a single apparatus or may be used separately.

Abstract: A method for writing a master image on a substrate includes dividing the master image into a matrix of frames, each frame including an array of pixels defining a respective frame image in a respective frame position within the master image. An electron beam is scanned in a raster pattern over the substrate, while shaping the electron beam responsively to the respective frame image of each of the frames as the electron beam is scanned over the respective frame position, so that in each frame, the electron beam simultaneously writes a multiplicity of the pixels onto the substrate.

Abstract: In an exposure system and semiconductor device manufacturing method relating to the present invention, an image of spatial image mark body through a reduction projection lens is projected onto a spatial image projection plate arranged on a wafer stage by irradiating the spatial image mark body arranged on a reticle stage with an exposure light. The spatial image mark body has a plurality of spatial image marks arranged in a same plane. At projection positions of images of each spatial image mark on the spatial image projection plate, spatial image openings are equipped with differing positions in an optical axis direction of the exposure light. A focus curve with a single exposure can be obtained, without moving the wafer stage in the optical axis direction, by respective measurements of optical intensities of images of each spatial image mark through each opening thereby enabling to calculate the best focus position.

Abstract: A system and method use a substrate with a pattern of individual, indiscrete alignment marks, i.e., the marks are separate and distinct from each other, and each mark is not divided into component parts. The pattern of marks is distributed over an area of the substrate, and the method also comprises the steps of providing a beam of radiation using an illumination system and an array of individually controllable elements to impart the beam with a pattern in its cross-section, providing a projection system to project the patterned beam onto the substrate, and providing a movement system to effect relative movement between the substrate and the projection system.

Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a stage configured to move the substrate; and a sensor unit which is arranged on the stage and configured to receive light having passed through the projection optical system, the sensor unit including an aperture plate which is configured to be used in measuring different optical performances, and on which a plurality of aperture patterns with different shapes or different sizes are formed, and a photoelectric conversion device configured to photoelectrically convert the light beams from the plurality of aperture patterns.

Abstract: The invention concerns a device for the detection of radiation with a wavelength ?<100 nm, preferably EUV radiation in a range of wavelengths 5 nm<?EUV<30 nm, in an illumination system. The device encompasses: a conversion element (4) which contains a scintillator material (22) which converts radiation with wavelengths <100 nm falling on the conversion element, by interacting with said radiation with wavelengths <100 nm, into a radiation with a wavelength ?fluorescent>100 nm, and a detection element (5) for the detection of the radiation with a wavelength ?fluorescent>100 nm which is received by the light-conducting element.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, and a position detection apparatus configured to detect at least one of a position of the reticle and a position of the substrate.

Abstract: A lithographic apparatus is disclosed that includes an encoder type sensor system configured to measure a position of a substrate table of the lithographic apparatus relative to a reference structure. The encoder type sensor system includes an encoder sensor head and an encoder sensor target and the lithographic apparatus comprises a recess to accommodate the encoder sensor target.

Abstract: This disclosure relates to lithography using pulsed laser illumination. In particular it relates to lithography for producing electronic devices on wafers using multi-mode excimer and molecular lasers, e.g. KrF, ArF, and F2 lasers. It may also apply to illumination systems where several single-mode sources are mixed or one single-mode laser beam is split and recombined with time delays, thereby creating an equivalent multimode source and to EUV lithography. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: An exposure apparatus includes an optical system irradiating a first exposure light from a first pattern and a second exposure light from a second pattern onto a first exposure area and second exposure area respectively to form an image of the first pattern and an image of the second pattern on the first and exposing areas respectively; a light receiving device receiving a detecting light via at least a part of the optical system; and a detection system obtaining, in parallel to at least a part of an operation of multiple-exposing a predetermined area on a substrate with the images of first and second patterns, informations about a positional relationship between the image of the first pattern and the substrate and a positional relationship between the image of the second pattern and the substrate via at least a part of the optical system. The substrate can be efficiently well multi-exposed.

Abstract: Reticle and/or wafer stage interferometers are mounted to a supporting body that is separate from the body that supports the projection optical system of a lithography apparatus. This enables the size of the body supporting the projection optical system to be reduced so that it has more favorable dynamic characteristics.

Abstract: The present invention provides an exposure apparatus which exposes a substrate via a liquid, comprising a measurement substrate includes a transmission part configured to transmit a light beam having passed through a projection optical system, a light-receiving unit including a light-receiving surface configured to receive the light beam transmitted through the liquid and the transmission part, and a calculator configured to arithmetically convert a light intensity distribution, on the light-receiving surface, of the light beam received by the light-receiving surface into a light intensity distribution on a pupil plane of the projection optical system, based on information indicating a correlation between a position coordinate on the light-receiving surface and a position coordinate on the pupil of the projection optical system.

Abstract: An image measurement method is provided for measuring an image of a pattern of a mask projected with a projection optical system. The method includes the steps of detecting light transmitted through an aperture while a substrate is arranged at an image plane of the projection optical system, the substrate having a slit and the aperture having a width larger than a width of the slit; adjusting an alignment angle of the slit on the basis of a signal related to the light detected in the detecting; and measuring the image by detecting light transmitted through the slit while moving the slit, the alignment angle of which has been adjusted in the adjusting, in the image plane of the projection optical system.

Abstract: A device is arranged to measure a quantity relating to radiation. The device includes a sensor configured to measure the quantity, a screen arranged to protect the sensor from incoming particles emitted from a source configured to emit extreme ultraviolet radiation, and a mirror configured to redirect extreme ultraviolet radiation emitted by the source, past the screen, to the sensor.

Abstract: A method of evaluating an exposure optical beam source of an exposure device used in an exposure process in manufacturing a semiconductor device is disclosed, in which the method includes dividing an exposure optical beam source into a plurality of unit optical beam sources in a unit size determined by an exposure device, acquiring a difference between an evaluation amount of a target pattern on a semiconductor substrate when a unit optical beam source is turned on and an evaluation amount of the target pattern on the semiconductor substrate when the unit optical beam source is turned off, and evaluating the exposure optical beam source by using the acquired difference as an index.

Abstract: An image reading apparatus includes a light source with a first luminescent portion that outputs light with a first wavelength range and a second luminescent portion that outputs light with a second wavelength range, the wavelength ranges being different from each other; a light-receiving portion that receives light reflected from an original irradiated by the light source; a scanning portion that shifts a reading position of the original in a vertical scanning direction by changing a relative position between the original and the light-receiving portion; a switching portion that alternately turns on the first and second luminescent portions when the scanning portion shifts the reading position, wherein a vertical scanning resolution for a first data obtained when the first luminescent portion is turned on is independently set from a vertical scanning resolution for a second data obtained when the second luminescent portion is turned on.

Abstract: The disclosure relates to microlithography systems, such as EUV microlithography illumination systems, as well as related components, systems and methods.

Abstract: A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.

Abstract: Provided are methods and apparatus for exposing multiple substrates within a single exposing apparatus using only a single light source wherein a first substrate is exposed in a series of steps or shots during which light transmitted along a primary optical path is directed onto a primary surface of the substrate with the substrate being repositioned between sequential shots. A second substrate is exposed during the period of time while the first substrate is being repositioned by altering the optical path to divert the light from the light source into a secondary optical path that will expose a region on the second substrate. When the first substrate has been repositioned, the diversion of the light is terminated so that the light will again be transmitted along the primary optical path in order to expose the next sequential shot on the primary surface of the first substrate.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed, a reference mark that serves as a reference for an alignment between the reticle and the object, a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of the projection optical system and the object and a space between at least part of the projection optical system and the reference mark, and an alignment mechanism for aligning the object by using the projection optical system and the first fluid.

Abstract: An exposure apparatus for exposing a substrate to radiant energy is disclosed. The apparatus comprises a holder configured to hold the substrate, a shutter for regulating exposure time for the substrate, and a controller configured to control an operation of the shutter, wherein the controller is configured to control the operation of the shutter based on information having a correlation with intensity of light reflected from the holder and the substrate held by the holder.

Abstract: The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (?ti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.

Abstract: An image exposure apparatus of a different angle incident type is provided having a single optical sensor unit for determining the timing for start point synchronization along the main scanning direction, an output level detecting device determining the output level of each beam of light which can be detected by the optical sensor unit, a first modulating device modulating the output level of each beam of light with a pixel data in the light path for exposure, and a second modulating device modulating the output level of each beam of light to a higher level outside of the light path for exposure than the level determined by said output level detecting device.

Abstract: An attenuation adjustment device is disclosed that includes a plurality of members configured to cast penumbras in a radiation beam illuminating a patterning device in a lithography apparatus. Furthermore, an attenuation control device is provided to adjust the members in such a manner as to control the attenuation of the patterned radiation beam projected onto a target portion of a substrate across the cross-section of the patterned radiation beam. The attenuation control device includes a detector configured to provide an output indicative of the position of each member in dependence on detection of a beam of detecting radiation reaching the detector after attenuation by the member.

Abstract: An exposure apparatus which illuminates a reticle with illumination light from a light source and projects light from the reticle onto a substrate to expose the substrate to light is disclosed. The apparatus comprises a shutter located on a path of the illumination light, a detector configured to detect a dose to the substrate, and a controller configured to control operation of the shutter. In a first exposure mode which uses illumination light with a first light intensity, the controller controls an open time of the shutter based on an output from the detector, and to store the open time. In a second exposure mode which uses illumination light with a second light intensity higher than the first light intensity, the controller controls a speed of the shutter based on the stored open time.

Abstract: An illuminator for a lithographic apparatus is disclosed, the illuminator including an array of individually controllable reflective elements capable of changing the angular intensity distribution of an incident illumination beam of radiation, wherein the array of individually controllable reflective elements is provided on a curved support structure, or the array of individually controllable reflective elements is arranged to serve as a curved reflective surface.

Abstract: Illumination systems for microlithography projection exposure apparatuses, as well as related systems, components and methods are disclosed.

Abstract: An exposure apparatus is disclosed. The apparatus comprises an image sensor, a measurement optical system configured to guide measurement light to obliquely enter the projection optical system, and further guide the measurement light returned from the projection optical system to the image sensor, and a control unit configured to calculate surface position information of the substrate based on the output from the image sensor. The control unit calculates the surface position information of the substrate based on an interval between the image, of a mark arranged on the original stage, formed by the measurement light which has passed through the mark and the image of the mark formed by the measurement light reflected by the mark.

Abstract: Disclosed is an illumination optical system and an exposure apparatus having the same, and specifically, as an aspect of the invention, an illumination optical system for illuminating a surface to be illuminated, that includes an aperture stop for defining an effective light source distribution upon a predetermined plane which is substantially in a Fourier transform relation with the surface to be illuminated, and a detector disposed adjacent an opening of the aperture stop.

Abstract: An apparatus and method for providing a variable illumination field for use in lithographic imaging for semiconductor manufacturing includes providing a an illumination system including a variable optical element having an array of addressable elements, each addressable element constructed and arranged to have a variable transmittance.

Abstract: An exposure apparatus includes a light source; an illumination optical system that illuminates an original with the light; a substrate stage that holds and moves a substrate; a projection optical system that projects the light from the original, the projection optical system and the substrate having therebetween a first gap filled with liquid for exposure of the substrate; a first detector that detects a light quantity of light and passing along a light path of the illumination optical system; a second detector disposed on the substrate stage, to detect a light quantity of light transmitted through the illumination optical system and the projection optical system; and a calculator that determines a first conversion factor with respect to each of the plurality of exposure conditions used for conversion between a light quantity detected by the second detector with gas and a light quantity detected by the second detector with the liquid.

Abstract: An exposure apparatus that exposes a pattern of an original onto a substrate includes a condenser optical system configured to split light from a light source into plural rays, to condense the plural rays at different positions on the original, and to make a central part of each of the plural rays that illuminate the original darker than a periphery at the Fourier transform plane with respect to the original, and a projection optical system configured to project the pattern of the original onto the substrate.

Abstract: A method and system are used to control a characteristic of a beam. The system comprises an illumination system, at least one optical element, a fluid source, and a pressure and/or fluid concentration controller. The illumination system produces a beam of radiation. The at least one optical element has at least one fluid path therethrough through which the beam passes and is capable of changing a characteristic of one or more portions of the beam. The fluid source supplies fluid to the at least one fluid path. The pressure and/or fluid concentration controller controls pressure and/or fluid concentration of the fluid to change the characteristic of the beam, which is positioned between the fluid source and the optical element.

Abstract: A lithographic apparatus comprises an illumination system, an array of individually controllable elements, a projection system, a substrate table, and a sensor system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The projection system projects the patterned beam onto a target plane, the patterned beam comprising an array of radiation spots. The substrate table supports a substrate, such that a target surface of the substrate is substantially coincident with the target plane. The sensor system comprises an array of detector elements arranged to receive at least one of the spots. The sensor system measures an energy of the or each received spot and provides an output signal indicative of the energy of the or each received spot.

Abstract: A method of determining at least one optical property of a projection exposure system is described, wherein the exposure system includes a beam delivery system having a light source for generating an exposure optical beam having light of a first wavelength (?1) and a second wavelength (?2), wherein a first ratio is defined as an intensity of light ?2 to an intensity of light ?1 in the exposure optical beam. The method includes supplying at least one measuring optical beam including light of at least ?1 to the projection optical system, detecting wavefronts having traversed the projection optical system, and determining an optical property in dependence of the detected wavefronts, wherein a second ratio of an intensity of light of ?2 to an intensity of light of ?1 in the measuring optical beam being incident on the detector of the wavefront detection system is less than the first ratio.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed, a reference mark that serves as a reference for an alignment between the reticle and the object, a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of the projection optical system and the object and a space between at least part of the projection optical system and the reference mark, and an alignment mechanism for aligning the object by using the projection optical system and the first fluid.

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

Abstract: At least one exemplary embodiment is directed to an exposure apparatus which includes an illumination optical system configured to irradiate a mask with light from a light source, and a projecting optical system configured to project a pattern image of the mask onto a substrate. The illumination optical system provides a first light intensity which can be altered by an optical unit forming a second light intensity. The second light intensity can be further altered by an optical unit changing the dimension of the second light intensity forming a third light intensity, where the third light intensity can be used in the lithographic process for forming devices.

Abstract: A system is disclosed that includes an interferometric sensor for measuring the wavefront of a radiation beam at, the interferometric sensor having a detector; an actuator for displacing the interferometric sensor in a direction along an optical axis; a first module for determining the change of phase of the wavefront at each of a plurality of locations on the detector, the change of phase resulting from displacement of the interferometric sensor by the actuator; and a second module for determining, for each of the plurality of locations, the corresponding pupil location at a pupil plane of the projection system traversed by the radiation, using the change of phase determined by the first module and the value of the displacement of the interferometric sensor, to produce a mapping between locations on the detector and corresponding pupil locations.