Abstract: An optical proximity correction method of a lithography system includes dividing a transmission cross coefficient (TCC) for each slit region; generating an optical proximity correction (OPC) model to which the divided TCC is applied; measuring an apodization value for each slit position; fitting critical dimension (CD) data for each slit position to a simulation CD of the OPC model; and correcting the OPC model using the fitted CD data.

Abstract: The present invention provides a processing system that includes a first apparatus and a second apparatus, and processes a substrate, wherein the first apparatus includes a first measurement unit configured to detect a first structure and a second structure different from the first structure provided on the substrate, and measure a relative position between the first structure and the second structure, and the second apparatus includes an obtainment unit configured to obtain the relative position measured by the first measurement unit, a second measurement unit configured to detect the second structure and measure a position of the second structure, and a control unit configured to obtain a position of the first structure based on the relative position obtained by the obtainment unit and the position of the second structure measured by the second measurement unit.

Abstract: Provided is a method for manufacturing a liquid ejection head substrate and a method for manufacturing a liquid ejection head capable of reducing degradation of the quality of a printed image. To this end, in formation of a liquid ejection head substrate, a part required to have more precise relative positional relation or not required to have high fabrication precision is set as a first part, and for the first part, a single-shot exposure method is employed. Also, a part required to have higher fabrication precision is set as a second part, and for the second part, a split exposure method is employed.

Abstract: A system is provided. The system includes an exposing device configured to generate a real-time image, including multiple first align marks, of a mask and an adjusting device configured to adjust an off-set of the mask from a pre-determined position to be smaller than a minimum aligning distance according to the first align marks and multiple align marks on a substrate, and further to move the mask closer to the pre-determined position to have a displacement, less than a minimum mapping distance, from the pre-determined position according to the real-time image and a reference image of the mask.

Abstract: Disclosed is a method of measuring a structure, and associated metrology device and computer program. The method comprises obtaining an amplitude profile of scattered radiation relating to a measurement of a first structure on a first substrate and obtaining a reference phase profile relating to a reference measurement of at least one reference structure on a reference substrate. The at least one reference structure is not the same structure as said first structure but is nominally identical in terms of at least a plurality of key parameters. The method further comprises determining a complex-valued field to describe the first structure from the amplitude profile and reference phase profile.

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

Abstract: A method comprising providing, on a substrate, a stack for an energy storage device, the stack comprising a first electrode layer, a second electrode layer, and an electrolyte layer between the first electrode layer and the second electrode layer. A groove is formed at least through the second electrode layer and the electrolyte layer such that the groove is wider in the second electrode layer than in the electrolyte layer. An electrically insulating material is provided in the groove. An electrically conductive material is provided in the groove, on the electrically insulating material.

Abstract: An optical system includes at least one optical element which has an optically effective surface and which is designed for an operating wavelength of less than 30 nm. The optical system also includes a heating arrangement for heating this optical element and comprising a plurality of IR emitters for irradiating the optically effective surface with IR radiation. The IR emitters are activatable and deactivatable independently of each other to variably set different heating profiles in the optical element. The optical system further includes at least one beam shaping unit for shaping the beam of the IR radiation steered onto the optically effective surface by the IR emitters. The optical system also includes a multi-fiber head comprising a multi-fiber connector for connecting optical fibers. IR radiation from a respective one of the IR emitters is suppliable by way of each of these optical fibers.

Abstract: Imprint apparatus forms pattern of imprint material by contacting pattern region of mold with the imprint material and curing the imprint material. The apparatus includes actuators for controlling shape of the pattern region by applying force to the mold and controller for controlling the actuators. Each actuator is given command value defined by sum of first command value for correcting first component, of shape difference between the shot region and the pattern region, that can be approximated by linear function and second command value for correcting second component, of the shape difference, that can be approximated by second- or higher-order function. After determining the first command value, the controller determines adjustment range of the second command value based on the first command value and determines the second command value by setting the adjustment range as restriction.

Abstract: A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.

Abstract: A metrology system may arrange metrology measurements for a plurality of metrology targets distributed in a plurality of fields on one or samples into a signal vector, where the metrology measurements associated with the metrology targets in each of the plurality of fields are grouped within the signal vector. The system may further decompose the signal vector into reconstruction vectors associated with different spectral components of the signal vector. The system may further classify a subset of the reconstruction vectors as components of a metrology model, where a sum of the components corresponds to a metrology model describing the metrology measurements on the one or more samples. The system may further generate control signals to control one or more processing tools based on the metrology model.

Abstract: A method of, and associated apparatuses for, performing a position measurement on an alignment mark including at least a first periodic structure having a direction of periodicity along a first direction. The method includes obtaining signal data relating to the position measurement and fitting the signal data to determine a position value. The fitting uses one of a modulation fit or a background envelope periodic fit.

Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

Abstract: An apparatus includes a display screen that includes OLED pixels disposed at a particular pitch in a first plane. A light projector includes light emitting elements disposed in a second plane parallel to the first plane. The light emitting elements are disposed at the same pitch as the OLED pixels or at an integer multiple of the pitch of the plurality of OLED pixels. The light emitting elements are operable to produce light at a wavelength for transmission through the display screen, and the first and second planes are separated from one another by a distance D such that d2=2*(?)*(D)/(N), where d is the pitch of the OLED pixels, ? is the wavelength, and N is a positive integer.

Abstract: A device for measuring reference points in real time during lithographic printing includes a light source providing an exposure beam; a light modulator modulating the exposure beam according to an exposure pattern; a measurement system configured to measure a position of a number of alignment marks previously arranged on a substrate; and an exposure optical system comprising a control unit. The exposure optical system delivers the modulated exposure beam as an image provided by the light modulator onto the substrate. The exposure system control unit is configured to calculate the orientation of the substrate based on the position of the alignment marks and control the delivering of the modulated exposure beam relative to the calculated orientation of the substrate.

Abstract: An imaging system, and method of its use, for viewing a sample surface at an inclined angle, preferably in functional combination with a sample investigating reflectometer, spectrophotometer, ellipsometer or polarimeter system; wherein the imaging system provides that a sample surface and multi-element imaging detector surface are oriented with respect to one another to meet the Scheimpflug condition, and wherein a telecentric lens system is simultaneously positioned between the sample surface and the input surface of the multi-element imaging detector such that an image of the sample surface produced by said multi-element imaging detector is both substantially in focus over the extent thereof, and such that substantially no keystone error is demonstrated in said image.

Abstract: An apparatus is provided for enabling smokable material to be heated to volatize at least one component of the smokable material. In one example, the apparatus has a capacitive sensor arranged to sense a change in capacitance when an article of smokable material is associated with a housing of the apparatus in use. In another example, the apparatus has a resistive sensor arranged to provide a measure of electrical resistance when an article of smokable material is associated with a housing of the apparatus in use. A combination of capacitive and resistive sensing may be used in some examples. In another example, a sensor makes use of at least two different sensing techniques. There is also provided an article of smokable material having a non-metallic electrically conductive region for detection by a sensor of an apparatus arranged to cause heating of the smokable material.

Abstract: An imprint apparatus which is advantageous in improving the accuracy of alignment of a mold and a substrate without reducing productivity is provided.

Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.

Abstract: Methods for patterning a substrate are described. A substrate is scanned using a spatial light modulator with a plurality of exposures timed according to a non-crystalline shot pattern. Lithography systems for performing the substrate patterning method and non-transitory computer-readable medium for executing the patterning method are also described.

Abstract: An optical image generation system including: a spatial light modulator (SLM) configured to receive an input collimated laser beam and modulate the wavefront of the laser beam; one or more optical elements configured to project the modulated laser beam onto a focal plane; a first mirror and a second mirror situated at the focal plane, an edge of the first mirror being adjacent to an edge of the second mirror, the first mirror reflects a first portion of the modulated laser beam in a first direction, the second mirror reflects a second portion of the modulated laser beam in a second direction; and an objective lens projects the first and second portions into a combined image; wherein the zeroth order diffraction is block or suppressed at the center of the focal plane.

Abstract: There is provided an exposure apparatus including a first light shielding unit including a first light shielding member and a second light shielding member, which include end potions facing each other in a scanning direction and in which a relative distance therebetween in the scanning direction can be changed, and arranged at a position away from a conjugate plane of a surface to be illuminated to a side of a light source, and a second light shielding unit including a third light shielding member and a fourth light shielding member, which include end portions facing each other in the scanning direction and in which a relative distance therebetween in the scanning direction can be changed, and arranged at a position away from the conjugate plane to a side of the surface.

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Abstract: A measurement illumination optical unit guides illumination light into an object field of a projection exposure apparatus for EUV lithography. The illumination optical unit has a field facet mirror with a plurality of field facets and a pupil facet mirror with a plurality of pupil facets. The latter serve for overlaid imaging in the object field of field facet images of the field facets. A field facet imaging channel of the illumination light is guided via any one field facet and any one pupil facet. A field stop specifies a field boundary of an illumination field in the object plane. The illumination field has a greater extent along one field dimension than any one of the field facet images. At least some of the field facets include tilt actuators which help guide the illumination light into the illumination field via various field facets and one and the same pupil facet.

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

Abstract: An image sensing device includes a pixel array configured to include a first pixel group and a second pixel group that are contiguous to each other, each of the first pixel group and second pixel group including a plurality of imaging pixels to convert light into pixel signals, and a light field lens array disposed over the pixel array to direct light to the imaging pixels and configured as a moveable structure that is operable to move between a first position and a second position in a horizontal direction by a predetermined distance corresponding to a width of the first pixel group or a width of the second pixel group, the light field lens array configured to include one or more lens regions each including a light field lens and one or more open regions formed without the light field lens to enable both light filed imaging and conventional imaging.

Abstract: Method and devices to reduce integrated circuit fabrication process yield loss due to undesired interactions between PCMs and the wafer test probes during wafer sorting tests are disclosed. The described methods entail the use of a properly patterned metal layer on the PCM dies adjacent to the product dies under test. Such patterned metal layers shield traces of the wafer probes from the circuits of the PCM dies. Various exemplary metal layer patterns are also presented.

Abstract: A projection optical unit for microlithography includes a plurality of mirrors and has a numerical aperture having a value larger than 0.5. The plurality of mirrors includes at least three grazing incidence mirrors, which deflect a chief ray of a central object field point with an angle of incidence of greater than 45°. Different polarized light beams passing the projection optical unit are rotated in their polarization direction by different angles of rotation. The projection optical unit includes first and second groups of mirrors. The second group of mirrors includes the final two mirrors of the plurality of mirrors at the image side. A linear portion in the pupil dependence of the total geometrical polarization rotation of the projection optical unit is less than 20% of a linear portion in the pupil dependence of the geometrical polarization rotation of the second group of mirrors.

Abstract: Methods and systems for determining information for a specimen are provided. Certain embodiments relate to bump height 3D inspection and metrology using deep learning artificial intelligence. For example, one embodiment includes a deep learning (DL) model configured for predicting height of one or more 3D structures formed on a specimen based on one or more images of the specimen generated by an imaging subsystem. One or more computer systems are configured for determining information for the specimen based on the predicted height. Determining the information may include, for example, determining if any of the 3D structures are defective based on the predicted height. In another example, the information determined for the specimen may include an average height metric for the one or more 3D structures.

Abstract: In a method of inspecting an outer surface of a mask pod, a stream of air is directed at a first location of a plurality of locations on the outer surface. One or more particles are removed by the directed stream of air from the first location on the outer surface. Scattered air from the first location of the outer surface is extracted and a number of particles in the extracted scattered air is determined as a sampled number of particles at the first location. The mask pod is moved and the stream of air is directed at other locations of the plurality of locations to determine the sampled number of particles in extracted scattered air at the other locations. A map of the particles on the outer surface of the mask pod is generated based on the sampled number of particles at the plurality of locations.

Abstract: A lithographic apparatus comprises a projection system comprising position sensors to measure a position of optical elements of the projection system. The positions sensors are referenced to a sensor frame. Damping actuators damp vibrations of the sensor frame. A control device drives the actuators and is configured to derive sensor frame damping force signals from at least one of the acceleration signals and the sensor frame position signals, derive an estimated line of sight error from the position signals, determine actuator drive signals from the sensor frame damping force signals and the estimated line of sight error, drive the actuators using the actuator drive signals to dampen the sensor frame and to at least partly compensate the estimated line of sight error.

Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

Abstract: Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

Abstract: A reflective member is disposed on the optical path from the linear light source to the lens array. An ultraviolet light blocking filter is provided closer to a light-receiving unit than the reflective member. A color filter is provided closer to the light-receiving unit than the ultraviolet light blocking filter. A light-receiving surface of the light-receiving unit has a first region opposed to the reflective member without the ultraviolet light blocking filter and the color filter interposed therebetween, a second region opposed to the reflective member and the ultraviolet light blocking filter without the color filter interposed therebetween, and a third region opposed to the reflective member, the ultraviolet light blocking filter, and the color filter.

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Abstract: An image forming apparatus includes a rotatable photosensitive member. A charging member charges a surface of the photosensitive member. A developing roller carries developer. The developing roller supplies the developer in normal polarity to the surface of the photosensitive member. A regulating member regulates the developer on the developing roller. A common voltage applying unit applies charging voltage and regulating voltage. The regulating voltage is applied with the developing roller rotating such that a potential difference in a direction in which electrostatic force from the regulating member to the developing roller acts on the developer charged in the normal polarity, is formed between the regulating member and the developing roller, and in which the charging voltage to be applied in a non-image-forming period is controlled so as to be smaller in absolute value than in an image-forming period.

Abstract: Methods and apparatuses for determining a position of an alignment mark applied to a region of a first layer on a substrate using a lithographic process by: obtaining an expected position of the alignment mark; obtaining a geometrical deformation of the region due to a control action correcting the lithographic process; obtaining a translation of the alignment mark due to the geometrical deformation; and determining the position of the alignment mark based on the expected position and the translation.

Abstract: Provided is a charged particle beam device capable of making a time lag as small as possible when transporting a succeeding wafer from an FOUP to an SC in parallel with returning a preceding wafer from a sample chamber to the FOUP. The charged particle beam device according to the disclosure predicts a completion time point at which a recipe of the preceding wafer is ended, and sets a time point at which the succeeding wafer is started to be taken out from the FOUP so that a timing at which the succeeding wafer is taken out from the FOUP to a load lock chamber and vacuum evacuation of the load lock chamber is completed matches the completion time point.

Abstract: A substrate inspection method includes: acquiring a feature amount of each of divided areas in an inspection target peripheral edge image, the inspection target peripheral edge image being an image of a peripheral portion of a target substrate as an inspection target, the divided areas being obtained by dividing a predetermined area in the image of the peripheral portion of the target substrate into a plurality of areas; and performing a predetermined determination concerning inspection of the peripheral portion of the target substrate based on an acquisition result in the acquiring the feature amount.

Abstract: A three-dimensional printing system for fabricating a three-dimensional article includes a motorized build platform, a dispensing module, a pulsed light source, an imaging module, a movement mechanism, and a controller. The imaging module receives radiation from the pulsed light source and includes a two-dimensional mirror array. The movement mechanism imparts lateral motion between the imaging module and the build platform. The controller is configured to operate the motorized build platform and the dispensing module to form a layer of build material at a build plane, operate the movement mechanism to laterally scan the imaging module over the build plane, operate the pulsed light source to generate a sequence of radiation pulses that illuminate the mirror array, and operate the mirror array to selectively image the build material.

Abstract: A detection method for a pellicle membrane of a photomask includes applying a predetermined pressure under which the pellicle membrane undergoes a deformation, measuring and calculating at least one of deformation level, Young's modulus, and flexural rigidity level of the pellicle membrane by detection, and obtaining a detection result about the pellicle membrane according to at least one of the deformation level, Young's modulus, and flexural rigidity level of the pellicle membrane, so as to evaluate the quality of the pellicle membrane.

Abstract: A surgical microscope system for use in a medical procedure. The surgical microscope system is controlled in a first mode of operation corresponding to a phase of the medical procedure and defining at least one setting for adjusting a set of adjustable optics. While in the first mode of operation, the surgical microscope system automatically determines, from a captured image, an indication that a second mode of operation is relevant. The mode of operation is switched to the second mode of operation.

Abstract: A circuit board structure includes a circuit board body having an adsorption surface; an auxiliary board on which a binding mark is disposed. The auxiliary board is spliced to the circuit board body, and a surface of the auxiliary board is flush with the adsorption surface. A part of the adsorption surface and a part of the surface of the auxiliary board together form an adsorption zone.

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

Abstract: An erasing unit according to an embodiment of the present disclosure is a unit that performs erasing of information written on a reversible recording medium. This erasing unit includes: a light source section including one or a plurality of laser devices; and a controller that controls the light source section to cause the light source section to emit a smaller number of laser light beams having emission wavelengths than the number of the recording layers included in the reversible recording medium.

Abstract: For the purposes of positioning a component part, provision is made in an optical system for a stray magnetic field to be detected via a sensor device and for a correction signal for compensating the effect of the stray magnetic field on the positioning of the component part to be ascertained.

Abstract: A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.

Abstract: The present invention discloses a digital photolithography method for a fiber optic device (FOD) based on a DMD combination. In this method, reflected light modulated by two DMDs is simultaneously projected onto a same position on an optical fiber end surface through one reduction projection lens. The two DMDs form a primary and secondary digital mask for joint control of an exposure dose distribution formed when patterns are shrunk and projected onto the optical fiber end surface. After the optical fiber end surface coated with photoresist is subject to this dose of exposure, developing, fixing, and etching are conducted, to form a micro-optic device on the optical fiber end surface. In the present invention, distribution of the exposure dose jointly modulated by a digital mask combination formed by the primary and secondary DMD exceeds an order of modulation of an exposure dose by a single DMD.

Abstract: A calibration method of a variable-focal-length lens including a liquid lens unit whose focal-length is periodically varied in response to a periodic drive-signal includes: using a calibration tool having a plurality of height-different parts on a surface; preparing a calibration table by repeating outputting a drive-signal having a predetermined voltage to the variable-focal-length lens, detecting a surface image of the calibration tool using an image detector, detecting two points having maximum image contrast in the surface image, calculating a focal-depth from a difference in a focal-length between the two points; and recording the focal-depth and the voltage of the drive-signal in a corresponding combination, and retrieving a value of the voltage corresponding to a desired focal-depth from the calibration table to set the variable-focal-length lens at the desired focal-depth, and adjusting the voltage of the drive-signal outputted to the variable-focal-length lens based on the retrieved value.

Abstract: Methods and systems for more efficient X-Ray scatterometry measurements of on-device structures are presented herein. X-Ray scatterometry measurements of one or more structures over a measurement area includes a decomposition of the one or more structures into a plurality of sub-structures, a decomposition of the measurement area into a plurality of sub-areas, or both. The decomposed structures, measurement areas, or both, are independently simulated. The scattering contributions of each of the independently simulated decomposed structures are combined to simulate the actual scattering of the measured structures within the measurement area. In a further aspect, measured intensities and modelled intensities including one or more incidental structures are employed to perform measurement of structures of interest. In other further aspects, measurement decomposition is employed to train a measurement model and to optimize a measurement recipe for a particular measurement application.