Abstract: Provided is a barrel support device for supporting a lens barrel. The barrel support device may include a guide frame configured to laterally support the lens barrel and tilt with the lens barrel, a rotation guide on a first end of the guide frame, the rotation guide being ring shaped and configured attach the lens barrel to the guide frame, and a ring-shaped tilting frame configured to support a second end of the guide frame and tilt the guide frame, wherein the guide frame, the rotation guide, and the tilting frame are configured to allow the lens barrel to pass therethrough.

Abstract: An article support is constructed to support an article. The article support includes a back fill structure constructed to supply and extract a thermal buffering fluid to and from the article support. The back fill structure is connected to an extraction duct that is constructed and arranged to extract at least a gas phase of the thermal buffering fluid from the back fill structure. The back fill structure is connected to a supply duct, constructed and arranged to supply a liquid phase of the thermal buffering fluid to the back fill structure. The back fill structure is arranged to have the thermal buffering fluid brought in a combined liquid and gas phase to thermally connect with the article.

Abstract: A reflective imaging optical system which forms, on a second plane, an image of a pattern arranged on a first plane and illuminated with light from an illumination optical system includes a plurality of reflecting mirrors including first and second reflecting mirrors by which the light reflected by the first plane is reflected first, second, respectively. An area on the first plane illuminated with the light from the illumination optical system is an illumination objective area, the illumination objective area is positioned on a predetermined side of an optical axis of the reflecting mirrors, and reflection areas of the first and second reflecting mirrors are positioned on the predetermined side of the optical axis of the reflecting mirrors; and the first and second reflecting mirrors are arranged so that an optical path of the light from the illumination optical system is positioned between the first and second reflecting mirrors.

Abstract: The invention relates to a method for locally deforming an optical element for photolithography in accordance with a predefined deformation form comprising: (a) generating at least one laser pulse having at least one laser beam parameter; and (b) directing the at least one laser pulse onto the optical element, wherein the at least one laser beam parameter of the laser pulse is selected to yield the predefined deformation form.

Abstract: The invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, apparatus comprising: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein patterning device has a main imaging field, and a perimeter and apparatus is operable to model higher-order distortions using signals resultant from alignment structures comprised in perimeter and/or in the imaging field.

Abstract: A method and apparatus for ultraviolet (UV) and extreme ultraviolet (EUV) lithography patterning is provided. A UV or EUV light beam is generated and directed to the surface of a substrate disposed on a stage and coated with photoresist. A laminar flow of a layer of inert gas is directed across and in close proximity to the substrate surface coated with photoresist during the exposure, i.e. lithography operation. The inert gas is exhausted quickly and includes a short resonance time at the exposure location. The inert gas flow prevents flue gasses and other contaminants produced by outgassing of the photoresist, to precipitate on and contaminate other features of the lithography apparatus.

Abstract: The invention relates to detecting targets located within patterns. The invention operates in the pupil plane by filtering the fourier transform from the surrounding pattern. In particular the method includes performing a fourier transform on reflected radiation data to form fourier transform data; removing portions of the fourier transform data which correspond to the target to form reduced fourier transform data; interpolating the portions of the reduced fourier transform data which were removed, to form product fourier transform data; and subtracting the product fourier transform data from the fourier transform data.

Abstract: The present disclosure provides a lithography system comprising a radiation source and an exposure tool including a plurality of exposure columns densely packed in a first direction. Each exposure column includes an exposure area configured to pass the radiation source. The system also includes a wafer carrier configured to secure and move one or more wafers along a second direction that is perpendicular to the first direction, so that the one or more wafers are exposed by the exposure tool to form patterns along the second direction. The one or more wafers are covered with resist layer and aligned in the second direction on the wafer carrier.

Abstract: An exposure apparatus which includes a plurality of units to be temperature-regulated, and transfers a pattern of a reticle onto a substrate while activating the plurality of units is disclosed. The exposure apparatus comprising a plurality of flow passages which run parallel to each other and through which a fluid to temperature-regulate the plurality of units flows, a bypass line which runs parallel to the plurality of flow passages so as to bypass the plurality of flow passages, and a flow rate controller configured to control a flow rate of fluid flowing through the bypass line, so that a total flow rate of the fluid flowing through the plurality of flow passages and the bypass line becomes a target flow rate.

Abstract: An exposure apparatus provided with an optical system that has one optical element to which at least two of three or more exposure lights are guided, and that is capable of irradiating three or more exposure lights onto exposure fields that respectively correspond to the exposure lights, with the exposure apparatus multiply exposing a predetermined field on a substrate with images of a plurality of patterns that are formed based on the three or more exposure lights that are respectively irradiated onto the three or more exposure fields.

Abstract: A detector to measure a property of radiation is disclosed. The detector comprises first and second luminescent uniaxial crystals each having an optic axis, the optic axis of the first uniaxial crystal being arranged such that it is substantially perpendicular to the optic axis of the second uniaxial crystal.

Abstract: An information display method that enables for efficient analysis and evaluation of alignment results and thereby facilitating the setting of effective alignment conditions or parameters. The alignment information display method receives as input the data of the results of processing relating to alignment measurement, receives as input information relating to the parameters of the alignment measurement, finds the information for display from the data of the results of processing based on the input parameters, and displays the found desired information for display by a display mode by which the effects on the alignment measurement become clear. Therefore, in setting the desired conditions, it is possible to easily confirm the results of analysis by the set conditions, that is, the effects of the set conditions. Therefore, a user can easily detect the optimum alignment conditions and parameters.

Abstract: A light beam generating apparatus and method of controlling the same is provided. The light beam generating apparatus may include a light source, a beam expander collimating a light beam emitted from the light source, an optical shutter selectively transmitting a light beam transmitted through the beam expander, and a focusing lens focusing a light beam transmitted the optical shutter. The optical shutter in the light generating apparatus can selectively transmit a light beam based on on/off control of the optical shutter on a pixel-by-pixel basis. This may permit one-dimensional, two-dimensional and three-dimensional nano patterns having various periods and directions to be manufactured.

Abstract: In the present invention, while conveying a subject to be exposed, when exposure on a first exposure area of the subject to be exposed is completed, the exposure being performed by using a first mask pattern group of a photomask in which a plurality of types of mask pattern groups corresponding to each exposure pattern is arranged and formed in a conveying direction of the exposure to be exposed at a predetermined interval, the photomask is moved in synchronization with a conveying speed of the exposure to be exposed and the mask pattern group is switched from the first mask pattern group to a second mask pattern group. When the switching of the mask pattern group of the photomask 11 is completed, the movement of the photomask is stopped, exposure on a second exposure area of the subject to be exposed 8 is performed by the mask pattern group.

Abstract: A page-turning device turning a page of a book includes a turning unit and a blower. The turning unit holds the page at a departure position of the page of the book being opened and releases the holding of the page at a destination position of the page. The blower sends air above the page at the departure position to blow against the page at the destination position.

Abstract: A method of measurement of at-resolution overlay offset may be implemented in a scatterometer. At least three targets are provided on a wafer, each target comprising a first marker grating and a second interleaved marker grating and each target having a different overlay bias between its first and second marker. The first and second markers are provided by subsequent lithography steps in a double patterning lithographic process. The targets are measured with a scatterometer and for each target a measured CD of at least one of the markers is determined using reconstruction. The CD of the first marker may be fixed in the reconstruction. The measured CDs and at least one of the overlay biases is used to determine an overlay result corresponding to a minimum measured CD. The overlay result may be determined by fitting a function such as a parabola to the measured CDs and the overlay biases and determining the overlay at the minimum of the fitted function.

Abstract: Improved low k1 lithographic imaging is disclosed by optimizing or improving an illumination polarization condition. The polarization condition may be a pre-defined spatially varying polarization, or a spatially customized local polarization of bright illumination points based on tracking a value of a desired lithographic response. Several non-traditional polarization conditions, e.g., TM/TE polarization (with or without a central TM region), diagonal polarization, and Y+X polarization (typically for dark field illumination) are disclosed, that offer substantial imaging advantages for specific lithographic problems, especially at low k1 values. The initial polarization definition may be limited to specific fixed polarization angles.

Abstract: A lithographic projection apparatus is disclosed that comprises a substrate table, a projection system, a liquid confinement structure and a thermal measurement system. The substrate table is configured to support a substrate. The projection system is configured to direct a patterned beam of radiation on to a target portion of the substrate. The liquid confinement structure is configured to at least partly confine an immersion liquid to a space between the projection system and the substrate, the substrate table, or both. The thermal measurement system comprises a thermally sensitive coating. The thermal measurement system is configured to detect the temperature of the immersion liquid in contact with the coating. Also disclosed is a thermal measurement system, a metrology system comprising the thermal measurement system and a dummy wafer for the thermal measurement system.

Abstract: End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

Abstract: A lithographic method, among things is disclosed. The method includes using information at least indicative of a desired shape or size of a constituent part of a device to implement the desired shape or size of the constituent part of the device, the desired shape or size being related to a measured property of a layer of material in which the constituent part of the device is to be created, at least a part of the implementation comprising determining a configuration of a plurality of individually controllable elements that would be necessary to create in a radiation beam a pattern which is sufficient to implement the desired shape or size of the constituent part of the device when creating the constituent part of the device.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: According to one embodiment, a light exposure method includes irradiating light on a reflective projection light exposure mask and irradiating an object to be exposed to light with reflected light by reflecting the light by the reflective projection light exposure mask. The reflective projection light exposure mask includes a substrate and a pattern portion. The substrate has a first surface. The pattern portion has a multilayer reflective film provided on the first surface of the substrate. The pattern portion includes a plurality of protruding patterns and depression patterns. The depression patterns are provided between the plurality of protruding patterns.

Abstract: In general, according to one embodiment, a pattern generating method evaluates an amount of flare generated through a mask during an EUV exposure; calculates optimal coverage of a mask pattern for enhancing uniformity of the amount of flare in an exposure region by applying an optimization algorithm; and generates a dummy pattern of the mask based upon the coverage of the mask pattern.

Abstract: The present invention provides a measuring apparatus for measuring a position of an alignment mark formed on a substrate and including a first mark having position information in a first direction and a second mark having position information in a second direction different from the first direction, the apparatus including a detector configured to detect an image of the alignment mark, a controller configured to control movement of a stage for holding the substrate and detection by the detector, and a processor configured to obtain a position of the alignment mark whose image is detected by the detector, wherein the controller is configured to cause the detector to detect the image of the alignment mark with the stage moving in the first direction, and cause the detector to detect the image of the alignment mark with the stage moving in the second direction.

Abstract: A method and an apparatus are provided to measure a position of a mark with a less measurement error caused by a variation in a wafer process condition. The mark is illuminated with light and an image of the mark is formed, via an optical system, in a light receiving surface of a sensor. The image of the mark is sensed and image data thereof is acquired by the sensor. Correction data of a fundamental frequency and a high harmonic of the image data is set based on information associated with a shape of the mark, an imaging magnification of the optical system, and an imaging area of the sensor. The image data is corrected using the correction data, and the position of the mark is calculated using the corrected image data.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, the lithographic apparatus having a first object and a planar member mounted on the first object to improve thermal transfer to/from a second object.

Abstract: The present invention provides a detection apparatus for detecting a position of a detection target, including an illumination optical system configured to perform dark-field illumination on a reference mark, and a detection optical system including a sensor configured to detect light from the reference mark and an optical system configured to guide the light from the reference mark to the sensor, and configured to detect a position of the reference mark in a first direction, wherein the reference mark includes one mark element in the first direction, and a width of the mark element in the first direction is set such that two edges of the mark element in the first direction are detected as one peak when the sensor detects the light from the reference mark.

Abstract: A method is disclosed to form a row of mutually spaced elongate lithography features along an axis on a substrate, for instance for use as contact electrodes for a NAND device. The method involves directing alignment of self-assemblable block copolymer (BCP) composition in a trench in a resist layer on the substrate, having the substrate as base, with an epitaxy feature in the trench to cause the ordered BCP layer to have elongate domains stretching across the trench width, substantially parallel to each other and to the substrate. The ordered BCP layer is then used as a resist to pattern the substrate. A BCP composition adapted to assemble with spaced discontinuous elongate elliptical domains is disclosed. The method may allow for sub-resolution contact arrays to be formed using UV lithography.

Abstract: The present invention relates to the field of micro electro mechanical system (MEMS), and particularly relates to a MEMS device of a two-dimensional (2D) air amplifier for electro spray ion focusing. It mainly includes original gas inlets, a gap structure, a wall structure and a center focusing groove in the axis of air amplifier. The feature of present invention is the double layers SU-8 mold fabricated by a micro machining method. Then the polydimethylsiloxane (PDMS) air amplifier is cast and bonded. In order to enhance the structure stiffness, PDMS is bonded with a glass supporting substrate. In the present invention, the fabrication method for the SU-8 mold and the PDMS casting and bonding processes are disclosed in detail so that the MEMS planar air amplifier ion focusing device can be fabricated by those skilled in the art. This fabrication method has advantages of simple process, low cost, small dimension size and easily implemented.

Abstract: The present invention is a pattern forming method of forming a pattern on a substrate using a block copolymer, the pattern forming method including the steps of: forming a film of a block copolymer containing at least two kinds of polymers on the substrate; heating the film of the block copolymer; irradiating the heated film of the block copolymer with ultraviolet light in an atmosphere of an inert gas; and supplying an organic solvent to the film of the block copolymer irradiated with the ultraviolet light.

Abstract: A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.

Abstract: A carrier apparatus positions a chuck member above a wafer mounted on a fine movement stage, relatively moves the chuck member and the fine movement stage in a vertical direction, makes the chuck member approach a position which is a predetermined distance away from the upper surface of the wafer, makes the chuck member hold the wafer from above in a non-contact manner, and makes the chuck member holding the wafer and the fine movement stage move apart within a predetermined plane after making the chuck member holding the wafer and the fine movement stage move apart in the vertical direction. Further, the carrier apparatus loads the wafer held in a non-contact manner from above by the chuck member on the fine movement stage.

Abstract: According to one embodiment, a pattern formation method includes preparing a mask pattern for interference, producing Talbot interference, and forming a pattern by blocking a part of interference light. The mask pattern for interference is arranged periodically a plurality of light transmissive portions. The Talbot interference is based on a transmitted light. The transmitted light is transmitted through the light transmissive portions by applying a light to the mask pattern for interference. The part of interference light is produced by the Talbot interference by means of a mask pattern for light blocking and applying another part of the interference light transmitted through the mask pattern for light blocking to a exposure object member.

Abstract: A method for fabricating a radiation-cured structure is provided. The method includes the steps of providing a first radiation-sensitive material and applying a second radiation-sensitive material to the first radiation-sensitive material. The first radiation-sensitive material has a first sensitivity. The second radiation-sensitive material has a second sensitivity different from the first sensitivity. At least one mask is placed between at least one radiation source and the first and second radiation-sensitive materials. The mask has a plurality of substantially radiation-transparent apertures. The first and second radiation-sensitive materials are then exposed to a plurality of radiation beams through the radiation-transparent apertures in the mask to form a first construct in the first radiation-sensitive material and a second construct in the second radiation-sensitive material. The first construct and the second construct cooperate to form the radiation-cured structure.

Abstract: The disclosure pertains to an optical apparatus, in particular for microlithography, that includes an optical module, a support structure and a connection apparatus. The connection apparatus includes at least one connection unit which includes a first connector part and a second connector part. The first connector part is connected to the optical module, and the second connector part is connected to the support structure.

Abstract: The embodiments described herein relate to methods, devices, and systems for masking a substrate using a photomasking process. An adaptive photomask configured to generate a photomasking pattern in accordance with dimensions of a surface feature on substrate is described. The adaptive photomask can be used to create customized photomask patterns for individual substrates. Methods and devices described herein can be used in manufacturing processes where similar parts having slight differences due to built-in tolerances are manufactured. Methods and a devices described herein can also be used in manufacture processes involving masking of three-dimensional portions of a part. A photomasking system that includes a translational mechanism for scanning a substrate surface is described.

Abstract: The technology disclosed relates to improved acousto-optic deflectors (AODs). In particular, it relates to compensation for subtle effects not previously addressed by AOD designers. A shifting center of gravity is described and addressed using advanced power equalization strategies. Denser writing brushes are provided by using a two-dimensional array of beams with corrections for factors such as angle of incidence at the AOD interface.

Abstract: A lithographic apparatus comprising a source collector module including a collector, configured to collect radiation from a radiation source; an illuminator configured to condition the radiation collected by the collector and to provide a radiation beam; and a detector arrangement comprising a reflector arrangement disposed in a fixed positional relationship with respect to the illuminator, the reflector arrangement being arranged to reflect radiation from the source collector module; and a sensor arrangement disposed in a fixed positional relationship with respect to the reflector arrangement, the sensor arrangement being configured to measure at least one property of radiation reflected by the reflector, the detector arrangement being configured to determine the location of a far field position of the radiation as a function of at least one property of the radiation reflected by the reflector and measured by the sensor arrangement.

Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.

Abstract: A method of forming a pattern is disclosed. First, N kinds of different photomask patterns are provided. Thereafter, the N kinds of different photomask patterns are transferred to a hard mask layer by using at least N?1 kinds of light sources with different wavelengths, so as to form a hard mask pattern, wherein one of the at least N?1 kinds of light sources with different wavelengths is a light source with a wavelength of 193 nm, and N is an integer of three or more.

Abstract: An exposure apparatus that forms a pattern by exposing a substrate is equipped with a first platform tower, a second platform tower installed at a predetermined distance, and an exposure main section arranged within the space between both platform towers that includes a plurality of high rigidity sections each including a high rigidity component. Accordingly, it becomes possible to use a module (a high rigidity section) of the preceding generation even when the generation changes.

Abstract: An illumination optical apparatus capable of forming a pupil intensity distribution of desired shape and illuminance and, in turn, capable of realizing illumination conditions of great variety. The apparatus has a spatial light modulation unit composed of a first spatial light modulator and a second spatial light modulator arranged in an order of incidence of light, and a distribution forming optical system to form a predetermined light intensity distribution on an illumination pupil, based on a beam having traveled via the first spatial light modulator and the second spatial light modulator. The first spatial light modulator has a plurality of first optical elements which are two-dimensionally arranged and postures of which each are individually controlled. The second spatial light modulator has a plurality of second optical elements which are two-dimensionally arranged in correspondence to the first optical elements and postures of which each are individually controlled.

Abstract: An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

Abstract: An exposure apparatus is provided with: a conveying device that conveys the subject to be exposed in a given direction; a spatial light modulating device having a plurality of light modulating elements, which are composed of an electro-optical crystalline material and arranged at least in one row in a direction intersecting a conveying direction of the subject to be exposed; an optical beam shaping device that limits the width of light emitted from each light modulating element in the conveying direction to a predetermined width; and a control device that on/off-controls light transmitted through the spatial light modulating device so as to generate a predetermined pattern. The light modulating element is formed tilted by a predetermined angle with respect to an axis parallel to the conveying direction. The control device shifts the optical beam shaping device in the conveying direction.

Abstract: In an exposure station, positional information of a holding member that holds a wafer is measured by a first measurement system including a measurement member, and in a measurement station positional information of the holding member that holds a wafer is measured by a second measurement system including another measurement member. An exposure apparatus has a third measurement system which can measure positional information of the holding member when the holding member is carried from the measurement station to the exposure station. A controller, coupled to the first and the second measurement systems, controls a movement of the holding member based on the positional information measured by the first measurement system in the exposure station and also controls a movement of the holding member based on the positional information measured by the second measurement system in the measurement station.

Abstract: A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed.

Abstract: An immersion lithographic projection apparatus having a megasonic transducer configured to clean a surface and a method of using megasonic waves through a liquid to clean a surface of an immersion lithographic projection apparatus are disclosed. A flow, desirably a radial flow, is induced in the liquid.

Abstract: In a lithographic apparatus, a slip of a patterning device relative to a support, the support constructed to support the patterning device, may be provided by measuring a position of the support relative to a first structure of the lithographic apparatus; measuring a position of the patterning device relative to a second structure of the lithographic apparatus; determining a correlation between the position of the patterning device and the position of the support from the measured position of the support, the measured position of the patterning device, and the mutual positions of the first and second structures; and deriving from the correlation a slip of the patterning device relative to the support. The structure may include a projection system to project a radiation beam patterned by the patterning device. The projection system may be connected to a frame, such as a metrology frame of the lithographic apparatus.

Abstract: System and methods estimate model parameters of a lithographic apparatus and control lithographic processing by a lithographic apparatus. An exposure is performed using a lithographic apparatus across a wafer. A set of predetermined wafer measurement locations is obtained. Discrete orthonormal polynomials are generated using the predetermined substrate measurement locations. The overlay errors arising from the exposure are measured at the predetermined locations to obtain overlay measurements. The estimated model parameters of the lithographic apparatus are calculated from the overlay measurements by using the discrete orthogonal polynomials as a basis function to model the overlay across the wafer. Finally, the estimated model parameters are used to control the lithographic apparatus in order to provide corrected overlay across the wafer.

Abstract: The present invention provides a stage apparatus which holds a substrate, including a first moving stage, a second moving stage supported by the first moving stage, a linear motor including a coil arranged on the first moving stage, and a magnet arranged on the second moving stage in correspondence with the coil, a first channel formed in the first moving stage to supply a first refrigerant for recovering heat from the coil not to contact the coil, a cover member arranged on the first moving stage to surround the coil and be spaced apart from the coil, and a second channel formed in the cover member to supply a second refrigerant for recovering heat from the cover member not to contact the coil.