Abstract: To provide a concentration measuring method which enables a stable and highly accurate concentration measurement while avoiding the step of making a background measurement. The concentration measuring apparatus includes: a concentration measuring contact that is brought into contact with a subject of measurement; a light source that emits light and enters the light into the concentration measuring contact; a polarizer that takes out p-polarized and s-polarized light components from the light which is passed through the concentration measuring contact into the subject of measurement, transmitted in the subject of measurement, and returned to the concentration measuring contact; a photodetector that determines at least the quantities of the p-polarized and s-polarized light components taken out by the polarizer; and calculating means that calculates the concentration of a specific component contained in the subject of measurement based on the determined results.

Abstract: A system for analyzing a thin film simultaneously applies a pulsed cleaning beam and a measurement beam to an analysis location on a test sample to enhance measurement accuracy. The pulsed cleaning beam prevents contaminant regrowth on the analysis location during the actual measurement. To minimize the effects of thermal transients from the pulsed cleaning beam on measurement data, cleaning pulses can be timed to fall between data samples. Alternatively, data sampling can be blocked during each cleaning operation (i.e., each cleaning pulse and subsequent cooldown period) or data levels can be clamped at measurement levels from just before the start of the cleaning operation for the duration of the cleaning operation. Alternatively, data samples taken during each cleaning operation can be discarded or replaced with data samples from just before the cleaning operation using post-processing techniques.

Abstract: A sensor for a conductive coating delivery system subject to high voltage including a movable member, such as a pig received through a delivery line having a magnet and a sensor in the delivery system subject to high voltage including an optically polarizing device subject to magneto-optical change upon approach of the magnet generating a polarized light signal, optical fibers connected to the sensor receiving the polarized light signal connected to an electrical device situated remotely from the high voltage generating an electrical signal for controlling a valve, metering pump or the like.

Abstract: An electromagnetic beam chromatic shifting and directing means for use in reflectively directing a spectroscopic beam of electromagnetic radiation while de-emphasizing visual wavelength intensity and simultaneously emphasizing both IR and UV wavelength intensities, applied in ellipsometer or polarimeter and the like systems.

Abstract: A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and/or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.

Abstract: Instead of constructing a full multi-dimensional look up table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab.

Abstract: The present disclosure provides for an optical metrology system for scanning an object (106) having a shiny surface. The optical metrology system includes at least one light source (102) configured and adapted to emit a structured light pattern (L) against the surface of the object, at least one first polarizer (108) disposed between the light source and the object such that the light pattern passes therethrough, the first polarizer being configured and adapted to vary at least one of the plane of polarization and the polarization angle of the light pattern, at least one camera (124a–124c) configured and adapted to take images of the object, and at least one second polarizer disposed between the camera and the object, the second polarizer having a fixed orientation.

Abstract: A method of analyzing structural characteristics of sidewall spacers fabricated on a wafer is disclosed. A grating bar having a plurality of grating targets is provided. A theoretical optical scatterometry spectrum is generated by subjecting the grating targets to optical scatterometry. An experimental optical scatterometry spectrum is generated by subjecting the sidewall spacers on the wafer to optical scatterometry. The structural characteristics of the sidewall spacers are equated with the structural characteristics of the grating targets when the theoretical optical scatterometry spectrum substantially matches the experimental optical scatterometry spectrum.

Abstract: A polarization bearing detection type two-dimensional light reception timing detecting device for implementing a fast surface shape measurement that can accommodate an animal body measurement, and a surface shape measuring device using it. The polarization bearing of a detection light is turned in synchronization with slit light scanning, and the polarization bearing is two-dimensionally recorded by two sets of analyzers and storage type image detectors in a crossed Nicols arrangement, and thereby it is possible to determine, with only one-time imaging, timing at which a slit light is beamed into respected pixels in the storage type image detectors.

Abstract: A defect inspecting apparatus can detect finer defects with high resolution optical images of those defects. The apparatus includes a sample mounting device for mounting a sample; lighting and detecting apparatus for illuminating a patterned sample mounted on a mount and detecting the optical image of the reflected light obtained therefrom. A display displays the optical image detected by this lighting and detecting apparatus. An optical parameter setting device sets and displays optical parameters for the lighting and detecting apparatus on the display. An optical parameter adjusting apparatus adjusts optical parameters set for the lighting and detecting apparatus according to the optical parameters set by the optical parameter setting apparatus. A storage device stores comparative image data. A defect detecting device detects defects from patterns formed on the sample by comparing the optical image detected by the optical image detecting apparatus with the comparative image data stored in the storage.

Abstract: Determining surface topology of a portion (26) of a three-dimensional structure is provided. An array of incident light beams (36) passing through a focusing optics (42) and a probing face is shone on said portion. The focusing optics defines one or more focal planes forward the probing face in a position which can be changed (72) by the focusing optics. The beams generate illuminated spots (52) on the structure and the intensity of returning light rays propagating in an optical path opposite to that of the incident light rays is measured (60) at various positions of the focal plane(s). By determining spot-specific positions yielding a maximum intensity of the returned light beams, data is generated which is representative of said topology.

Abstract: An ellipsometer measurement apparatus for determining the thickness of a film applied on a substrate, is described. The apparatus includes a light source emitting an incoming beam, a transmitting optical system conveying the polarized incoming beam to an incidence point on the substrate, and a receiving optical system that has an analyzer and conveys the reflected beam formed at the incidence point to a photodetector device, the polarization direction of the incoming beam and of the analyzer being modified in time relative to one another, and the intensity changes produced thereby being evaluated by way of an evaluation device in order to determine the film thickness.

Abstract: An optical profilometer apparatus 10 having a stage with a support surface 42 on which a wafer substrate may rest. The wafer stage is capable of moving the wafer in (x, y) or (r, ?) mode to achieve complete wafer scan. Polarized light from a monochromatic source 12 is directed towards the wafer surface 22. Surface profiling is achieved by sensing beam shift on a segmented sensor caused by level/height change at the wafer surface. In preferred embodiment of the profilometer, a single light beam is engineered to propagate in two orthogonal planes of incidence so that it becomes sensitive to height/level change on the wafer while being insensitive to local slope or wafer tilt. In another embodiment, slope of surface feature is measured. By integrating slope over the measurement spot, local feature height is obtained. This is particularly useful when the beam shift due to feature height change is below detection sensitivity.

Abstract: An improved method and apparatus for the measurement of the polarization of light uses nonlinear polarimetry. The higher order moments of the E field are measured and then transformed into standard polarimetry parameters yielding the polarization of the light. In a first embodiment, the light to be measured is transmitted through a rotating retarder. The retarder is optically coupled to a fixed analyzer and light is then detected by linear and nonlinear photodetectors. The spectra from the detectors is calculated and transformed, to obtain the polarization. In a second embodiment, the light to be measured is received by an optical fiber comprising a plurality of fiber birefringences to retard the light. Polarization sensitive gratings along the length of the fiber scatter the light, and photodetectors detect the scattered light. Apparatus in two preferred embodiments can perform the inventive method.

Abstract: A method that is sensitive to lattice damage (also called “primary method”) is combined with an additional method that independently measures one of two parameters to which the primary method is sensitive namely dose and energy. In some embodiments, the additional method is sensitive to dose, and in two such embodiments 4PP and SIMS are respectively used to measure dose (independent of energy). In other embodiments, the additional method is sensitive to energy, and in one such embodiment SIMS is used to measure energy (independent of dose). Use of such an additional method resolves an ambiguity in a prior art measurement by the primary method alone. The two methods are used in combination in some embodiments, to determine adjustments needed to match two or more ion implanters to one another or to a reference ion implanter or to a computer model.

Abstract: Provided is a measuring device which has a focusing unit for focusing light flux from a light source and irradiating it to a magnetic substance to be measured, a half-turn asymmetric element acting only on the light flux reflected by the magnetic substance to be measured and acting in such a manner that its action on polarization distribution in a cross section of the light flux has asymmetry nature about half-turn around an optical axis in order to obtain sensitivity to in-plane magnetization vector components of the magnetic substance to be measured, and a polarization split detector for detecting a light amount of a polarization component in one direction or separated each component of polarization components orthogonal to each other of the light which receives action of the half-turn asymmetric element so that the in-plane magnetization vector component in one direction can be measured separately from other components.

Abstract: A spectroscopic ellipsometer system comprising a plurality of individual sources which are sequentially energized to provide a sequence of beams, each of different polarization state but directed along a common locus toward a sample. The prefered spectroscopic ellipsometer system has no parts which move during data collection, and it provides a progressive plurality of sequentially discrete, rather than continuously varying, polarization states.

Abstract: Disclosed are spectroscopic ellipsometer and combined spectroscopic reflectometer/ellipsometer systems. The spectroscopic ellipsometer system portion includes polarizer and analyzer elements which remain fixed in position during data acquisition, and a step-wise rotatable compensator electromagnetic beam transmitting means, which serves to enable imposing a plurality of sequentially discrete, rather than continuously varying, polarization states on said beam of electromagnetic radiation. Further disclosed is a calibration procedure for said spectroscopic ellipsometer system portion of the invention which involves the gathering of, for each of a plurality of ellipsometrically distinct sample systems, spectroscopic data at a sequential plurality of discrete electromagnetic radiation beam polarization states, combined with providing of a mathematical model of the spectroscopic ellipsometer system and application of a mathematical regression procedure.

Abstract: A method for improving the measurement of semiconductor wafers is disclosed. In the past, the repeatability of measurements was adversely affected due to the unpredictable growth of a layer of contamination over the intentionally deposited dielectric layers. Repeatability can be enhanced by removing this contamination layer prior to measurement. This contamination layer can be effectively removed in a non-destructive fashion by subjecting the wafer to a cleaning step. In one embodiment, the cleaning is performed by exposing the wafer to microwave radiation. Alternatively, the wafer can be cleaned with a radiant heat source. These two cleaning modalities can be used alone or in combination with each other or in combination with other cleaning modalities. The cleaning step may be carried out in air, an inert atmosphere or a vacuum. Once the cleaning has been performed, the wafer can be measured using any number of known optical measurement systems.

Abstract: An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction signal. A processing module of the optical metrology system is configured to receive the measured diffraction signal from the detector to analyze the structure. The optical metrology system also includes a generic interface disposed between the photometric device and the processing module. The generic interface is configured to provide the measured diffraction signal to the processing module using a standard set of signal parameters. The standard set of signal parameters includes a reflectance parameter that characterizes the change in intensity of light when reflected on the structure and a polarization parameter that characterizes the change in polarization states of light when reflected on the structure.

Abstract: A surface inspection method in a surface inspection system which comprises a photodetection unit and a photodetection polarizing angle changing means, comprising the step of receiving a scattered reflection light from a substrate surface where standard particles are coated by changing a photodetection polarizing angle by the photodetection polarizing angle changing means, and the step of performing surface inspection by setting the photodetection polarizing angle to a condition where an S/N ratio of photodetection output is at the highest.

Abstract: A metrology device, such as an ellipsometer, includes a light source that produces a pulsed electromagnetic beam, such as a flash bulb or pulsed laser, and a spatially dependent polarizing element that introduces a spatially dependent retardation in the light beam. The use of a pulsed light source is advantageous over a continuous light source, as a pulsed light source generates less heat, is stronger, lasts longer, and does not need the use of a mechanical shutter. The use of a spatially dependent polarizing element advantageously eliminates the use of temporally dependent moving polarization modulation elements, thereby allowing the use of a pulsed light source. Downstream of the spatially dependent polarizing element are the analyzer and a multi-element detector that may be synchronized with the pulsed electromagnetic beam to detect after one or several pulses of light have been emitted from the pulsed light source.

Abstract: The subject invention relates to a broadband optical metrology system that segregates the broadband radiation into multiple sub-bands to improve overall performance. Each sub-band includes only a fraction of the original bandwidth. The optical path—the light path that connects the illuminator, the sample and the detector—of each sub-band includes a unique sub-band optical system designed to optimize the performance over the spectral range spanned by the sub-band radiation. All of the sub-band optical systems are arranged to provide small-spot illumination at the same measurement position. Optional purging of the individual sub-band optical paths further improves performance.

Abstract: A real-time calibration method for beam profile ellipsometry systems includes projecting an electromagnetic probe beam having a known polarization state though an objective lens onto the surface of a subject and collecting the reflected probe beam using the same objective. The reflected probe beam is then passed through a rotating compensator and analyzer before being received by a detector. A processor performs a harmonic analysis on the detector output to determine normalized Fourier coefficients. The processor uses Fourier coefficients to measure the retardation ?B and the azimuth angle QB of the objective lens; and uses the retardation ?B and the azimuth angle QB to identify the ellipsometric effects of the objective lens.

Abstract: Methods for differential numerical aperture analysis of samples, utilizing angle-of-incidence measurements resulting from variable illumination or observation numerical apertures, or both. Metrology applications are provided, and more particularly including scatterometer, ellipsometer and similar analysis methods, including bi-directional reflectance or transmission distribution function measurement.

Abstract: In an imaging apparatus, a detection section 9 detects a beam LF having passed through an aperture 5 in a first direction and a location designation beam LB having passed through the aperture 5 in the opposite direction is made incident to a position (x,y) in a first light image IM1 on an image pickup surface corresponding to a specific position (x,y) in a second light image IM2, whereby the result of detection of the beam LF detected at the detection section 9 indicates data at a specific position in an incoming light image designated by the location designation beam LB, regardless of whether there is a mechanical error in movement of the aperture 5.

Abstract: A method and a device to detect subsurface three-dimensional micro-structure in a sample by illuminating the sample with light of a given polarization and detecting light emanating from the sample that has a different direction of polarization by means of a confocal optical system.

Abstract: An evaluating apparatus uniquely determines a twist angle, a cell gap and a mean tilt angle through a method, in which a linearly polarized light beam is firstly radiated to a sample of liquid crystal display element so as to produce a transmitted light beam, subsequently, a photo-multiplier measures at least one of a directional dependency of a polarization of the transmitted light beam and a wavelength dependency of the polarization of the transmitted light beam and, finally, a computer system determines the twist angle, the mean tilt angle the cell gap on the basis of the directional dependency or the wavelength dependency.

Abstract: A combined ellipsometer and oscillator system and method of decorrelated determination of thickness and optical constants of deposted materials. In use the ellipsometer determines the product of thickness and optical constant, and the oscillator system changes frequency of oscillation proportional to the thickness of material deposited upon a surface of an element therein.

Abstract: Method and system for detecting the presence and determining characteristics of objects such as ink cartridges in printing systems. The system includes a signal transceiver capable of transmitting signals using a photo emitter and capable of receiving signals sent from the objects using a photo detector, and a monitoring system coupled to the signal transceiver for processing received signals to determine characteristics of the objects. Further, the photo emitter is at least partially covered by a first optical polarizer and the objects include a reflective surface that is at least partially covered by a second optical polarizer. When signals are transmitted from the signal transceiver to the objects, the second optical polarizer allows the signals to reach the reflective surface and reflect back towards the signal transceiver if the orientations of the first and second optical polarizers are substantially the same.

Abstract: A method for tracking change in Temperature of Uniaxial or Biaxial Anisotropic Samples utilizing polarized electromagnetic radiation.

Abstract: A combiner for optical beams includes a substrate overlaid by a multi-layer dielectric film stack. The substrate is a clear material and the dielectric film stack is a series of alternating layer of high and low refractive index. This gives the combiner relatively high reflectivity across UV wavelengths and relatively high transmissivity in the visible and longer wavelengths and allows visible light to pass through the combiner while UV light is reflected. At the same time dielectric film stack has minimal absorption and scatter. This means that the intensity of visible light maintains at least 90% of its intensity as it passes through combiner and UV light retains at least 90% of its intensity as it is reflected by combiner.

Abstract: The present invention provides a hand held dermoscopy epiluminescense device having a generally circular optical magnification lens incorporated into the housing of the device. A lighting array provides the light necessary for medical examination of the skin. The lighting array comprises a ring of LEDs comprising four different colored sets of LEDs each on a different lighting circuit. The four colors comprise White, UV/Blue (405 nm), green/yellow (565 nm) and orange/red (630 nm). A second embodiment provides a hand held dermoscopy epiluminescense device with a magnification lens and an associated ring of luminous diodes powered by an on board battery. Every other diode in the ring operates as first and second light sources. The even diodes are filtered by a first polarization ring and the odd diodes are filtered by a second polarization ring. Each polarization ring has an open center for the lens and openings sized and positioned to correspond to the even or odd diodes to only filter one set.

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.

Abstract: A device for the density or colorimetric measurement of a measured object, i.e., a densitometer or colorimeter, comprising a light source for directing measurement light onto an object to be measured, a polarization filter positioned between the light source and the object to be measured, a photoelectric sensor, a second polarization filter positioned between the object to be measured and the sensor, at least one of the polarization filters for electronic control of polarization plane orientation, a measurement lens for directing the measurement light originating from a measurement location of the measured object through the second polarization filter and onto the sensor and a controller for electronically rotating the polarization plane for one of the polarization filters relative to the other by 90°.

Abstract: Imaging apparatus which images the changes in height of reactive spots on the surface of a slide requires the surface roughness of the slide to be small enough to distinguish the changes in height from the roughness features of the slide.

Abstract: An optical system includes both a microspot broadband spectroscopic ellipsometer and a photoacoustic film thickness measurement system that are supplied laser light by the same laser light source. One of the systems makes a measurement, the result of which is used to adjust a parameter of the other system; e.g. the ellipsometer measures thickness and the photoacoustic system uses the thickness result to measure the speed of sound. In one version, the ellipsometer converts the laser beam to a broad-spectrum beam that provides higher intensity.

Abstract: The present invention is a hand held dermoscopy epiluminescense device with a magnification lens and an associated ring of luminous diodes powered by an on board battery. Every other diode in the ring operates as first and second light sources. The even diodes are filtered by a first polarization ring and the odd diodes are filtered by a second polarization ring. Each polarization ring has an open center for the lens and openings sized and positioned to correspond to the even or odd diodes to only filter one set. A viewing polarizer is provided and is cross-polarized relative to the first polarization ring and is parallel-polarized with the second polarization ring. A three way switch which provides on demand cross-polarized, parallel-polarized and a combination thereof for epiluminescence. A second embodiment provides even diodes of a first color and odd diodes of a second color.

Abstract: Systems and methods for optical inspection of patterned and non-patterned objects. The methods include determining a state of polarization of light reflected from the object, establishing a polarization state of the incident light, and filtering the reflected light by polarization so as to provide an optical signal that is detected by a detector.

Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

Abstract: Apparatus for acquiring an image of a specimen comprising a cassette having an optical portion holding a specimen array on a TIR surface and being removably matable to a processing portion having a polarized light beam source and a processing polarization-sensitive portion to image the spatially distributed charges in polarization of the specimen array. In one form the array optical portion comprises a transparent slide having a bottom surface with first and second gratings located to direct polarized light to the TIR surface and to direct light reflected by that (TIR) surface to an imager, respectively. The apparatus may include a flow cell integral with the optical portion as well as means for selecting the direction and wavelength of the polarized light.

Abstract: A method for determining a surface quality of a substrate sample using a differential interference contrast microscope is described. The microscope includes an eyepiece, an eyepiece focus adjustment, a microscope focus adjustment, a light source, at least one of an aperture or reticule, a camera view, a prism and an eyepiece. The method includes calibrating the focus of the eyepiece with the focus of the camera and determining a peak response ratio for the microscope through adjustment of phase between differential beams of the microscope. The substrate sample is placed under the microscope, illuminated with the light source, and brought into focus with the microscope focus. Phase between differential beams is adjusted, at least one image of the substrate sample is captured and processed to determine a level of surface structure on the substrate sample.

Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

Abstract: An alignment target includes periodic patterns on two elements. The periodic patterns are aligned when the two elements are properly aligned. By measuring the two periodic patterns with an incident beam having a single polarization state and detecting the intensity of the resulting polarized light, it can be determined if the two elements are aligned. The same polarization state may be detected as is incident or different polarization states may be used. A reference measurement location may be used that includes a third periodic pattern on the first element and a fourth periodic pattern on the second element, which have a designed in offset, i.e., an offset when there is an offset of a known magnitude when the first and second element are properly aligned. The reference measurement location is similarly measured with a single polarization state.

Abstract: The method for determining local structures in optical materials, especially crystals, includes observing schlieren visually in a material to be tested with divergent white light in a first step; measuring birefringence of polarized laser light in the material to determine local defects and structure faults in the material with a spatial resolution of 0.5 mm or better in a second step if the material is judged to be suitable in the first step and then interferometrically measuring the material to determine the faults in the material by interferometry in a third step if the material is judged to be suitable in the first and second steps. This method can be part of a method for making optical components, especially for microlithography.

Abstract: Methods and apparatus are described for assessing the reflective properties of mirrors at different angles of incidence without precise knowledge of the mirror's basic optical constants and/or without precise knowledge of the mirror's over-coating prescription. Reflectance values can be accurately calculated for multiple angles of incidence based upon measurement data collected for a single angle of incidence. The approach uses equations based on the Fresnel equations for reflectance in which reflectance is calculated as a function of the angle of incidence of incoming light to the scanned mirror used to collect the signal. The angle of incidence-based approach allows accurate reflectance values to be calculated over a broad range of wavelengths and angle of incidences without detailed knowledge of the optical properties of the coating material and the substrate underneath.

Abstract: An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and consequently in a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.

Abstract: An ellipsometer includes a light source for generating a probe beam of polychromatic light for interacting with a sample. A polarizer is used to impart a known polarization state to the probe beam and the polarized probe beam is directed against the sample at a shallow angle of incidence. A rotating compensator is used to impart phase retardations to the polarization state of the reflected probe beam. After passing through the compensator, the probe beam passes through a second polarizer (analyzer). After leaving the analyzer, the probe beam is received by a detector. The detector translates the received probe beam into a signal that includes DC, 2? and 4? signal components (where ? is the angular velocity of the rotating compensator). A processor analyzes the signal using the DC, 2? and 4? components allowing simultaneous evaluation of both critical dimensions and film parameters.

Abstract: A monochromator system applicable in spectrophotometer, polarimeter and ellipsometer systems which operate over a large range of wavelengths, including a stage which enables position adjustment of the location of a source of electromagnetic radiation in lateral (X), longitudinal (Y) and vertical (Z) directions, from a common location outside an enclosure, and including multiple detector systems mounted in a manner which allows easily, sequentially, via mechanical motion, placing a first and then a second thereof so as to receive a beam of electromagnetic radiation.

Abstract: Disclosed are improvements in ellipsometer and the like systems capable of operating in the Vacuum-Ultra-Violet (VUV) to Near Infrared (NIR) wavelength range, and methodology of use.