Abstract: An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scatterometry analysis in order to evaluate geometrical sample features that induce light scattering.

Abstract: An optical inspection device includes a light source for generating a probe beam. The probe beam is focused onto a sample to create a spread of angles of incidence. After reflecting from the sample, the light is imaged onto a two dimensional array of photodetectors. Prior to reaching the detector array, the beam is passed through a rotating compensator. A processor functions to evaluate the sample by analyzing the output of the photodetectors lying along one or more azimuthal angles and at different compensator positions.

Abstract: A method and system for determining the dielectric constant of a low-k dielectric film on a production substrate include measuring the electronic component of the dielectric constant using an ellipsometer, measuring the ionic component of the dielectric constant using an IR spectrometer, measuring the overall dielectric constant using a microwave spectrometer and deriving the dipolar component of the dielectric constant. The measurements and determination are non-contact and may be carried out on a production device that is further processed following the measurements.

Abstract: In one embodiment, a surface scanning system comprises a radiation directing assembly that scans a surface using a Cartesian scanning pattern; and a radiation collecting assembly that collects radiation reflected from the surface. A scattered radiation collection system is included that measures the scattered light from the surface.

Abstract: A method for implementing ellipsometry for an ultrathin film includes directing a polarized light beam incident upon a sample surface, receiving an initial reflected beam from the sample surface and redirecting the initial reflected beam back upon said sample surface one or more times so as to produce a final reflected beam. The final reflected beam is received through an analyzer and at a detector so as to determine characteristics of the ultrathin film.

Abstract: A spectrophotometer, reflectometer, ellipsometer polarimeter or the like system having a detector means for independently intercepting electromagnetic radiation reflected from a sample frontside or backside, and methodology for pursuing less correlated determination of refractive index and thickness values.

Abstract: Simultaneous use of wavelengths in at least two ranges selected from RADIO, MICRO, FIR, IR, NIR-VIS-NUV, UV, DUV, VUV EUV, XRAY in a regression procedure to evaluate parameters in mathematical dispersion structures to model dielectric functions.

Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.

Abstract: Polarimeters based on transversal division of the input beam and use of different polarization elements in different polarization states to change polarizations of different portions of the input beam so that the power levels of the different portions of the input beam can be measured to determine the polarization state of the input beam. A wedged substrate can be used to direct the different portions of the input beam at different directions and a lens can be used to focus these different portions at different locations at a plane.

Abstract: In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.

Abstract: The invention relates to a method of performing an optical measurement on a sample, such as an ellipticity measurement. The sample is irradiated with a polarized irradiation beam and a return beam is linearly polarized. The irradiation or return beam is modulated with a birefringence modulator, such as a photoelastic modulator, in accordance with a primary modulation signal. The return beam is directed onto a multichannel detector. Typically the detector is a slow detector, such as a CCD, having a response time greater than a period of the primary modulation signal. Detection values are generated simultaneously at each detection element and processed to determine a plurality of measurements. Various measurement techniques are described, including detector signal averaging over gated intervals; a design employing coherent modulation of the gain of an ICCD , and a modulator-coherent flash lamp design.

Abstract: A spectroscopic ellipsometry system directs a near infra-red (NIR) probe beam at a test sample to allow metrology to be performed on vertical structures within the test sample. Because silicon is relatively transparent to NIR light, structural information can be determined from the polarization effects produced by the test sample, in a manner similar to that used with IR spectroscopic ellipsometry systems. However, unlike IR light, which requires delicate and costly optical and measurement components (e.g., vibration-sensitive Fourier transform sensors), NIR light can be directed and detected using more robust and inexpensive components (e.g., array-based detectors), thereby making a NIR spectroscopic ellipsometry system much more affordable and usable than conventional IR spectroscopic ellipsometry systems.

Abstract: A substantially achromatic multiple element compensator system for use in wide spectral range (for example, 190-1700 nm) rotating compensator spectroscopic ellipsometer and/or polarimeter systems. Multiple total internal reflections enter retardance into an entered beam of electromagnetic radiation, and the elements are oriented to minimize changes in the net retardance vs. the input beam angle resulting from changes in the position and/or rotation of the system of elements.

Abstract: A method of determining a starting value for thickness of the most influential layer in a mathematical model of a sample for use in a data fitting routine, supplemented by the use of ordinary or B-spline polynomials to represent at least one of the real and imaginary parts of optical constants in the mathematical model.

Abstract: Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.

Abstract: A normal incidence rotating compensator ellipsometer includes an illumination source that produces a broadband probe beam. The probe beam is redirected by a beam splitter to be normally incident on a sample under test. Before reaching the sample, the probe beam is passed through a rotating compensator. The probe beam is reflected by the sample and passes through the rotating compensator a second time before reaching a detector. The detector converts the reflected probe beam into equivalent signals for analysis.

Abstract: A method for producing surface coatings on gas turbine components and/or for measuring abrasive material residues on gas turbine components, including: -abrasively blasting a surface of the component using an abrasive material, a portion of this abrasive material remaining on or in this surface of the component; -detecting abrasive material which has remained on or in the surface of the component; and -applying a coating to the surface of the component is disclosed.

Abstract: The optical object discriminating device includes a light projecting part which applies light, which is emitted from a semiconductor light emitting element, to a measuring object which is an object to be measured, and a light receiving part which receives reflected light reflected by the measuring object. Between the light receiving part and the measuring object is placed a polarization-state selector part which permits polarized light of a specified polarization direction to pass therethrough. A signal processing part processes a signal outputted by the light receiving part, and measures intensity of light of the polarization direction permitted by the polarization-state selector part to pass therethrough.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a property of a specimen prior to, during, or subsequent to lithography. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: A system for measuring optical properties of a sample is provided. A light source provides incident polarized light. A detector detects reflected light from the sample surface. A processor determines a first coefficient (R) of the reflected light detected by the detector, determines a second coefficient (n), extinction coefficient (k), and thickness of the film based on the measured first coefficient, and determines a first dielectric constant (?1) and a second dielectric constant (?2) of the film according to the second coefficient (n) and extinction coefficient (k).

Abstract: A system for determination of optical constants of liquids, including provision for reducing stress induced effects while obtaining data.

Abstract: Disclosed are system for and method of analyzing substantially the exact same spot size on a sample system with at least two wavelengths for which the focal lengths do not vary more than within an acceptable amount.

Abstract: A method of determining actual properties of layered media. An incident beam of light is directed towards the layered media, such that the incident beam of light is reflected from the layered media as a reflected beam of light. The actual properties of the reflected beam of light are measured, and properties of the layered media are estimated. A mathematical model of the layered media is solved with the estimated properties of the layered media to yield theoretical properties of the reflected beam of light. The mathematical model is solved using at least one of a modified T matrix algorithm and a Z matrix algorithm. The theoretical properties of the reflected beam of light are compared to the actual properties of the reflected beam of light to yield a cost function. The estimated properties of the layered media are iteratively adjusted and the mathematical model is iteratively solved until the cost function is within a desired tolerance.

Abstract: An optical monitoring system for monitoring thin film deposition on a substrate includes a support bridge that is attached on an inside of a deposition chamber. The system further includes a fiber optic collimator having an optical fiber for incoming light, and another fiber optic collimator having an optical fiber for transmitted or reflected light from the substrate. The system further includes a shutter that is closed when a desired thin film thickness is deposited on the substrate.

Abstract: A technique is provided monitoring and removing contaminants from the surface of a sample that is being measured with an optical metrology tool. The monitoring and removing contaminants from the surface of a sample may occur prior to recording an optical response from said sample in order to ensure that accurate results are obtained. Contaminant layers may be quantified so that other measurements may be accurately obtained without requiring the removal of the contaminant layer. The contaminant layers may be removed through the exposure to optical radiation. Alternatively, properties of non-contaminant layers may be characterized by analyzing changes that occur in such layers by exposure to optical radiation. The optical metrology instrument may be an instrument which operates at wavelengths that include vacuum ultra-violet (VUV) wavelengths.

Abstract: A normalization procedure for an ellipsometric system having a rotating optical element such as a polarizer or compensator is disclosed. In operation, a first DC component is extracted from the measured output signals obtained during the first 180 degrees of rotation of the optical element and a second DC component is extracted from the output signals obtained during the second 180 degrees of rotation of the optical element. The first DC component is used to normalize the output signals obtained during the first 180 degrees of rotation of the optical element and the second DC component is used to normalize the output signals obtained during the second 180 degrees of rotation of the optical element.

Abstract: A method for characterizing line width roughness of printed features is provided. A wafer having thereon a plurality of gratings formed within a test key region is prepared. The wafer is transferred to a spectroscopic ellipsometry tool having a light source, a detector and a computer. A polarized light beam emanated from the light source is directed onto the gratings. Spectrum data of reflected light is measured and recorded. The spectrum data is compared to a library linked to the computer in real time. The library contains a plurality of contact-hole model based spectra created by incorporating parameter values that describes the line width roughness. The spectrum data is matched with the contact-hole model based spectra, thereby determining the parameter values.

Abstract: To effectively reduce a measurement error in a parameter indicating two-dimensional spatial distribution of a state of polarization generated by variations in retardation of a birefringent prism pair due to a temperature change or other factors, while holding a variety of properties of an imaging polarimetry using the birefringent prism pair. By noting that reference phase functions ?1(x, y) and ?2(x, y) are obtained by solving an equation from each vibration component contained in an intensity distribution I(x, y), the reference phase functions ?1(x, y) and ?2(x, y) are calibrated concurrently with measurement of two-dimensional spatial distribution S0(x, y), S1(x, y), S2(x, y), and S3(x, y) of Stokes parameters.

Abstract: A spectroscopic ellipsometer or polarimeter system having a source of a polychromatic beam of electromagnetic radiation, a polarizer, a stage for supporting a material system, an analyzer, a dispersive optics and a detector system which comprises a multiplicity of detector elements, there being apertures before the stage for supporting a material system, and thereafter, the system further having at least one multi-element lens and optionally being present in an environmental control chamber.

Abstract: Nonlinear optical null ellipsometry is disclosed as a method to evaluate second-order nonlinearities on and off resonance in thin surface films and bulk materials.

Abstract: A skin beauty evaluation method for imaging an object such as human face to obtain digital image data, extracting data on a mirror reflection light component of each pixel from the digital image data and evaluating the skin sheen and skin beauty by using this. A simulation image obtaining method is also disclosed. By using these methods, it is possible to objectively evaluate the skin sheen and beauty which have been conventionally evaluated only subjectively. Thus, the methods are useful for development of a new skin cosmetic material. Moreover, by using a polarized light source, a digital camera to which polarization filter can be attached and a computer having a predetermined calculation or analysis equation, it is possible to easily evaluate the customer skin sheen and beauty and perform simulation of the face state of a test subject after improvement of the skin state or makeup.

Abstract: The present invention provides systems and methods for the determination of the physical characteristics of a structured superficial layer of material using light scattering spectroscopy. The light scattering spectroscopy system comprises optical probes that can be used with existing endoscopes without modification to the endoscope itself. The system uses a combination of optical and computational methods to detect physical characteristics such as the size distribution of cell nuclei in epithelial layers of organs. The light scattering spectroscopy system can be used alone, or in conjunction with other techniques, such as fluorescence spectroscopy and reflected light spectroscopy.

Abstract: A method of controlling the lithography process used to fabricate patterns on layers of a semiconductor wafer is disclosed. The method includes providing at least two scatterometry targets, each target having a first pattern formed in an upper layer substantially aligned with a second pattern formed in a lower layer. The targets are optically inspected. A theoretical model of each target is created, with each model including a plurality of unknown parameters defining the target and wherein at least one of the parameters is common to each of the targets. A regression analysis is performed wherein the measured optical response of the targets is compared to calculated optical responses generated by varying the values of the parameters applied to the model. During the regression analysis, a common value for the common parameter is maintained. The results are used to control the lithography process.

Abstract: The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.

Abstract: A method and system are presented for use in measuring/inspecting a patterned article. Optical measurements are applied to a measurement site on the article by illuminating the measurement site with a plurality of wavelengths at substantially normal incidence of the illuminating light, detecting light returned from the illuminated site, and generating measured data indicative thereof. The measurements are applied to the measurement site through a polarizer rotatable between its different orientations selected from a number of pre-calibrated orientations.

Abstract: An apparatus and method for optically characterizing the reflection and transmission properties of a sample with a beam of light having a small diameter on a surface of the sample over a broadband of wavelengths, from 190 nm to 1100 nm. Reflective optical components, including off-axis parabolic mirrors with a collimated incident or reflected broadband beam of light, minimize non-chromatic aberration. Angles of incidence and reflection from optical components and the sample are kept substantially near normal to the optical components and the sample to minimize changes in the polarization of the beam of light. The apparatus and method further disclose an optical light path that can be focused by adjusting the position of an off-axis parabolic mirror and a planar mirror.

Abstract: Disclosed are improvements in ellipsometer and the like systems capable of operating in the Vacuum-Ultra-Violet (VUV) to Near Infrared (NIR) wavelength range, and methodology of use.

Abstract: A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Abstract: The present invention provides a method and substrate examining device that sequentially and automatically measures at least the thickness and the internal stress of the thin film at a predetermined measurement point on the surface of every manufactured semiconductor substrate to perform quality control on each substrate, and reliably recognizes the cause of defects to improve productivity. The examining device and method accurately analyzes the correlation between film thickness and stress to establish the manufacturing processes necessary for manufacturing a semiconductor substrate of higher performance, and measures the distribution of a physical quantity such as internal stress, index of refraction, and composition of the semiconductor substrate in the film thickness direction, without being influenced by change in ambient environmental temperature thereby further improving examination precision.

Abstract: A method and apparatus for enhancing image contrast between resist-covered and bare silicon regions of a wafer, applicable to Edge Bead Removal inspection. The wafer is illuminated separately by s-polarized light and p-polarized light impinging at near the Brewster angle of silicon or resist, and an image difference between the reflected s-polarized light and the reflected p-polarized light is derived.

Abstract: An optical metrology system includes model approximation logic for generating an optical model based on experimental data. By eliminating theoretical model generation, in which the fundamental equations of a test sample must be solved, the model approximation logic significantly reduces the computational requirements of the metrology system when measuring films formed on patterned base layers. The experimental model can be created by selecting an expected mathematical form for the final model, gathering experimental data, and compiling a lookup model. The lookup model can include the actual measurement data sorted by output (attribute) value, or can include “grating factors” that represent compensation factors that, when applied to standard monolithic model equations, compensate for the optical effects of grating layers.

Abstract: The present invention discloses a non-destructive method and apparatus for measuring the 3D topography of a sample having periodic microstructure deposited onto the surface, or deposited onto a film, or buried into the film or sample. In particular, the present invention relates to an optical system and method utilizing polarized light beam, diffracted from the repeated structure, to measure its spatial geometry giving parameters such as profile height, profile widths, sidewall angles, and arbitrary profile shape. The optical system employs a broadband or semi-monochromatic light source to produce a light beam that is polarized and focused onto the periodic structure being measured. The focused beam consists of a whole range of illumination angles that is provided to the structure simultaneously. Transmitted or reflected diffracted light generated by the interaction of the light with the periodic structure is collected by an imaging detector system.

Abstract: An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and, consequently, a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.

Abstract: A substrate in a parallelepiped plate form satisfies an interference condition when incident light has a wavelength (?) fallen under the following (d: thickness, n: refractive index, ?: incident angle, N: integer). 2 ? nd ? 1 - ( sin ? ? ? / n ) 2 ? = N [ Equation ? ? 7 ] At this time, the light in a transmission spectrum is intensified to cause a fringe peak to appear, whereas the light in a reflection spectrum is weakened to provide a fringe valley. At around the wavelength (frequency), as the incident angle is increased, the transmittance nears zero while reflectance increases nearing 1.

Abstract: A method for measuring a thickness of a coating of a constructional unit, in particular a heat-compatible coating on a component of a gas turbine, includes measuring coordinates of the constructional unit three-dimensionally with a measuring device, in particular an optical scanner, before and after the coating, a thermal distortion of the constructional unit being recorded during the coating and the thickness of the coating being determined from a comparison of the measured constructional unit coordinates before and after the coating. The thermal distortion of the constructional unit is taken into account in the thickness determination of the coating by a comparison with at least one reference point at an uncoated location.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.

Abstract: Low aberration relay systems modified to perform as spatial filters in reflectometer, spectrophotometer, ellipsometer, polarimeter and the like systems.

Abstract: Systems and methods for providing and enhancing electromagnetic radiation beam radial energy homogeneity and intensity vs. wavelength content, for reliably directing electromagnetic radiation emitted by a source thereof in a common direction, for achromatically reducing spot size on a sample (eg. liquid cavity containing lenses and low aberration 1:1 imaging systems modified to perform as spatial filters), and for directing different wavelengths into different detectors, in ellipsometer, polarizer or the like systems.

Abstract: A two dimensional beam deflector is disclosed which deflects beams from multiple optical assemblies. The input of beams of the multiple optical assemblies follow parallel optical paths until deflection to a wafer. An ellipsometer using a two-dimensional beam deflector is also disclosed.