Abstract: Simultaneous measurement of two orthogonally polarized beams upon diffraction from a substrate is done to determine properties of the substrate. Linearly polarized light sources with their radiation polarized in orthogonal directions are passed via two non-polarizing beamsplitters, one rotated by 90° with respect to the other. The combined beam is then diffracted off a substrate before being passed back through a non-polarizing beamsplitter and through a phase shifter and a Wollaston prism before being measured by a CCD camera. In this way, the phase and intensities for various phase steps of the two polarized beams may thereby be measured and the polarization state of the beams may be determined. If the phase shifter is turned to zero (i.e. with no phase shifting), the grating of the substrate has its parameters measured with TE and TM polarized light simultaneously with the same detector system.

Abstract: A method of reducing the effect of systematic and/or random noise during determination of dependent variable values, (eg. pseudo “n” and “k” and/or ellipsometric PSI and DELTA or mathematical equivalent vs. wavelength or angle of incidence), involving selecting a mathematical function and an independent variable subset range combination so that a square error best fit with total summed square error over the independent variable subset range being minimized, zero or within an acceptable range near zero, are achieved.

Abstract: This invention concerns a device for ellipsometric two-dimensional display of a sample placed in an incident medium, observed between a convergent light cross-reflected analyser and polarizer, wherein the ellipsometric parameters of the ensemble formed by the sample and a substrate whereon it is placed, are processed. The substrate comprises a base and a stack of layers of base and its ellipsometric properties are known. The ellipsometric properties of the substrate are such that the variations of the ellipsometric parameters of the sample are displayed with a contrast greater than the contrast produced in the absence of such substrate. The invention also concerns a display method and an ellipsometric measurement method with spatial resolution.

Abstract: A surface inspection apparatus includes: a light source unit that emits a divergent light flux of predetermined linearly polarized light to be used to illuminate a test substrate; a first optical member that allows the divergent light flux of the predetermined linearly polarized light to enter therein with a predetermined angle of incidence and then guides a light flux to the test substrate; a second optical member that allows a light flux from the test substrate to enter therein, emits a convergent light flux thereof with a predetermined angle of emergence and forms an image at a specific surface; an extraction unit that extracts linearly polarized light in the convergent light flux from the second optical member, which is perpendicular to the predetermined linearly polarized light; a light-receiving unit that receives an image of the test substrate formed via the second optical member and the extraction unit; and at least one polarization correcting member disposed within a light path extending between the

Abstract: A method of optical characterization of a layer of material in which the spectrum of index n* (?) is characterized by a limited number of “nodes” that are points with coordinates (?i, ni, ki) or (?i, n*i), with ni=n(?i), ki=k(?i) and n*i=ni+jki, where j2=?1, and an interpolation law between the “nodes,” which can be, for example, linear, cubic, of “spline” type or polynomial (of any given degree). This interpolation law allows the calculation, from the “nodes,” of the refraction indexes and the extinction coefficients for the wavelengths located between the “nodes.

Abstract: A method of nonlinear polarimetry for measuring higher order moments of the E field of an optical signal is provided. The method includes imposing a phase delay on a first polarization of a received optical signal with respect to a second polarization of the optical signal to produce an intermediate optical signal having a time varying polarization. A polarization of the intermediate optical signal is suppressed. The intermediate optical signal is detected with a plurality of photodetectors, with at least one photodetector configured to be responsive to a nonlinear optical process. Spectra of the photodetector outputs are calculated to determine higher order moments of the E field, and the moments are transformed to obtain the polarization measurement.

Abstract: A system for providing an improved resolution retina image comprising an imaging camera for capturing a retina image and a computer system operatively connected to the imaging camera, the computer producing short exposures of the retina image and providing speckle processing of the short exposures to provide the improved resolution retina image. The system comprises the steps of capturing a retina image, producing short exposures of the retina image, and speckle processing the short exposures of the retina image to provide the improved resolution retina image.

Abstract: Spectroscopic ellipsometer systems which include polarizer and analyzer elements which remain fixed in position during data acquisition while at least one continuously rotating or step-wise rotatable compensator imposes a continuously variable or plurality of sequentially discrete polarization states on a beam of electromagnetic radiation, including a system of mirrors and refractive elements for correcting aberation while directing a beam of electromagnetic radiation to a spot on a sample at a multiple different angles-of-incidence.

Abstract: The accuracy of a library of simulated-diffraction signals for use in optical metrology of a structure formed on a wafer is evaluated by utilizing an identity relationship inherent to simulated diffraction signals. Each simulated diffraction signal contains at least one set of four reflectivity parameters for a wavelength and/or angle of incidence. One of the four reflectivity parameters is selected. A value for the selected reflectivity parameter is determined using the identity relationship and values of the remaining three reflectivity parameters. The determined value for the selected reflectivity parameter is compared to the value in the obtained set of four reflectivity parameters to evaluate and improve the accuracy of the library. The identity relationship can also be used to reduce the data storage in a library.

Abstract: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab.

Abstract: A new generation polarimetry apparatus and methodology is disclosed, which involve passing polarized light through a sample including a chiral analyte, where the analyte is under the influence of a periodically varying magnetic field. The apparatus also utilizes optical heterodyne detection and lock-in detection at higher order harmonics of the magnetic field modulation frequency to improve sensitivity and detection limits of optical properties of chiral analytes.

Abstract: The present invention discloses an optical measurement and/or inspection device that, in one application, may be used for inspection of semiconductor devices. It comprises a light source for providing light rays; a half-parabolic-shaped reflector having an inner reflecting surface, where the reflector having a focal point and an axis of summary, and a device-under-test is disposed thereabout the focal point. The light rays coming into the reflector that is in-parallel with the axis of summary would be directed to the focal point and reflect off said device-under-test and generate information indicative of said device-under-test, and then the reflected light rays exit said reflector. A detector array receives the exited light rays and the light rays can be analyzed to determine the characteristics of the device-under-test.

Abstract: Disclosed is application of oblique angle of incidence, reflection and/or transmission mode spectroscopic ellipsometry PSI and/or DELTA, (including combinations thereof and/or mathematical equivalents), vs. wavelength data over an intermediate wavelength band range around a pass or reject band, to monitor and/or control fabrication of multiple layer high/low refractive index band-pass, band-reject and varied attenuation vs. wavelength thin film interference filters, either alone or in combination with transmissive non-ellipsometric electromagnetic beam turning point vs. layer data obtained at an essentially normal angle of incidence.

Abstract: Method and apparatus for estimating surface moisture content of wood chips employing a surface moisture measurement obtained from a non-contact surface moisture sensor, which measurement is calibrated with values of a set of optical parameters, such as HSL color camera signals, representing light reflection characteristics of the wood chips in order to estimate the surface moisture content thereof.

Abstract: A sample information obtaining apparatus includes an electromagnetic wave generator; a sample holding unit which holds a sample to be tested and serves as a polarizer having a polarization axis which defines how an incident electromagnetic wave is to be divided according to a polarization state of the incident electromagnetic wave; an electromagnetic wave detecting unit which separately detects a transmitted electromagnetic wave transmitted through the sample holding unit and a reflected electromagnetic wave reflected off the sample holding unit, the transmitted and reflected electromagnetic waves being obtained by dividing the incident electromagnetic wave incident on the sample holding unit according to a relative positional relationship between the polarization state of the incident electromagnetic wave and the polarization axis of the sample holding unit; and a processor which processes signals of the electromagnetic waves detected by the electromagnetic wave detecting unit and obtains information about t

Abstract: A method of visually quantifying a test material along with an imaging apparatus for practicing the method is disclosed. The method comprises: (a) illuminating the test material at a known angle of incidence with diffuse light of a known and adjustable polarization state; (b) receiving light from the test material with a polarization state modified by the test material; (c) measuring an intensity of the polarization components of the received light for each illuminated pixel substantially simultaneously; (d) calculating the Stokes Vector in two dimensions for each illuminated pixel; and (e) creating an image map for the known polarization state. The method may also include adjusting the known polarization or the incident angle of the diffuse light to create additional image maps. The method and apparatus are intended for use in medical imaging including minimally invasive surgery.

Abstract: The present invention discloses an optical measurement and/or inspection device that, in one application, may be used for inspection of semiconductor devices. A method is disclosed for extracting information of a device-under-test for an ellipsometer, comprising the steps: providing a plurality of incoming polarized beams using a plurality of polarizers, where each of the beams being polarized at a designated polarizing angle; using a parabolic reflector to focus said plurality of incoming polarized beams on a spot on a DUT; using a parabolic reflector to collect a plurality of beams reflected from said DUT; and analyzing said collected beams using a plurality of analyzers, wherein each of the analyzers having a designated polarizing angle with respect to its respective polarizer.

Abstract: Device and method for measuring complex reflectance using a light source for generating a light beam with known polarization state, a lens for focusing the beam onto a sample surface such that various rays within the focused beam create a spread of angles of incidence ?, a waveplate for retarding one polarization state of the beam, a polarizer for generating interference between beam polarization states, and a detector with a two dimensional array of detector elements for generating intensity signals in response to the beam, wherein each detector element corresponds to a unique angle of incidence ? and azimuthal angle ? of the reflected beam. A processor calculates magnitude and phase values for the reflected beam by using the intensity signals corresponding to at least one incident angle ? and a plurality of azimuthal angles ? within the at least one incident angle ? sufficient to enable a meaningful Fourier analysis thereof.

Abstract: A method for inspecting an object using a structured light measurement system that includes a light source and an imaging sensor. The method includes emitting light from the light source, polarizing each of a plurality of different wavelengths of the light emitted from the light source at different polarization angles, projecting light emitted from the light source onto a surface of an object, receiving light reflected from the object surface with the imaging sensor, and analyzing the light received by the imaging sensor to facilitate inspecting at least a portion of the object.

Abstract: A method and apparatus for measuring a circularly polarized rotating electromagnetic wave using a magnetic field are provided. The method and apparatus are used to measure properties of a circularly polarized rotating electromagnetic wave occurring in nature by using a phenomenon that energy is intensified or attenuated when circularly polarized rotating electromagnetic waves interact. The method and apparatus are used to measure properties of a circularly polarized rotating electromagnetic wave which causes variations in a magnetic field, when circularly polarized rotating electromagnetic waves are radiated into a magnetic field formed by a magnetic body or the flow of electric current, and the variations in the magnetic field are measured as variations in electric current.

Abstract: In one embodiment a system to detect multi-domain regions in the soft under layer of a perpendicular magnetic media comprises a radiation targeting assembly to target a polarized radiation beam onto a surface of a substrate covered by the soft under layer of a perpendicular magnetic media, a radiation collecting assembly that collects radiation reflected from the surface, a processor coupled to the first radiation collecting assembly, and a memory module coupled to the processor. The memory module comprises logic instructions which, when executed by the processor, configure the processor to record signal values from radiation reflected by the radiation beam at different positions on the surface and analyze the signal values to detect a region of multiple magnetic domains in the soft under layer of a perpendicular magnetic media.

Abstract: Improved methodology for monitoring deposition or removal of material to or from a process and/or wittness substrate which demonstrates a negative e1 at some wavelength. The method involves detection of changes in P-polarized electromagnetism ellipsometric DELTA at SPR Resonance Angle-of-Incidence (AOI) to monitor deposition of and/or removal of minute amounts of materials onto, or from, said process and/or witness substrate. The methodology can optionally monitor ellipsometric PSI, and involves simultaneously or sequentially applying non-P-polarized electromagnetism at the same angle of incidence, or electromagnetic radiation of any polarization at a different angle-of-incidence and wavelength to the process or wittness substrate and application of conventional ellipsometric analysis.

Abstract: A method for implementing ellipsometry for an ultrathin film includes directing a polarized light beam incident upon a sample surface, receiving an initial reflected beam from the sample surface and redirecting the initial reflected beam back upon said sample surface one or more times so as to produce a final reflected beam. The final reflected beam is received through an analyzer and at a detector so as to determine characteristics of the ultrathin film.

Abstract: An ellipsometer measures any point of a sample by a first spectrometer and a second spectrometer. The ellipsometer performs analysis based on the measurement results obtained by the first spectrometer, performs analysis based on the measurement results obtained by the second spectrometer, and calculates an approximation formula for approximating the analysis results obtained by the second spectrometer to the analysis results obtained by the first spectrometer. The remaining points of the sample are measured with the second spectrometer, and the results of analysis using the measurement results are corrected based on the approximation formula.

Abstract: The present invention provides a system and method for utilizing optical measurements to determine properties of a material. Ellipsometry is used to measure the polarization state of a light beam reflected from or transmitted through a material. Utilizing ellipsometry, two or more Mueller Matrix elements are determined by variation of the polarization state of the incident light. The angular-dependences of the Mueller matrix elements are plotted in a plane, and the symmetrical relationships between the various Mueller Matrix element distributions are then be determined. Upon determining symmetrical relationships, two and/or three dimensional atomic or molecular arrangements of atoms or molecules in the material are determined. Based on the two or three dimensional atomic or molecular arrangements, a material property, such as chiralty, may be determined.

Abstract: Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a 1D grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer and analyzer.

Abstract: A substantially self-contained “on-board” material system investigation system functionally mounted on a three dimensional locational system to enable positioning at desired locations on, and distances from, the surface of a large sample, including the capability to easily and conveniently change the angle-of-incidence of a beam of electromagnetic radiation onto a sample surface.

Abstract: A sample sequestering system which allows access to a subspace in a chamber encompassed generally enclosed space, for use in entering and removing a sample when the subspace is opened to atmosphere. Sufficient purge gas is flowed from within the generally enclosed space into the subspace discourage atmospheric contaminates from entering into the subspace. Contained within the generally enclosed space is a spectrophotometer, ellipsometer or polarimeter or the like system which operates at wavelengths, (eg. UV), which are adversely affected, (eg. absorbed), by typical atmospheric contents.

Abstract: An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction signal. A processing module of the optical metrology system is configured to receive the measured diffraction signal from the detector to analyze the structure. The optical metrology system also includes a generic interface disposed between the photometric device and the processing module. The generic interface is configured to provide the measured diffraction signal to the processing module using a standard set of signal parameters. The standard set of signal parameters includes a reflectance parameter chat characterizes the change in intensity of light when reflected on the structure and a polarization parameter that characterizes the change in polarization states of light when reflected on the structure.

Abstract: The present invention provides a thin film property measuring method using a spectroscopic ellipsometer. With the measuring method, a model including a combination of the film thickness, complex refractive index, or the like, of each layer is formed, and fitting is made for the measured spectra and the spectra calculated based upon the model, with the model and the incident angle being modified over a predetermined number of repetitions, thereby determining the structure, the wavelength dependency of the dielectric constant, and the composition ratio, of a thin film including a compound semiconductor layer on a substrate. Furthermore, new approximate calculation is employed in the present invention, thereby enabling the concentration of the atom of interest contained in polycrystalline compound semiconductor to be calculated.

Abstract: Though it is necessary to enhance sensitivity in detecting defects as design rules grow finer, the resolution of a conventional optical system is not sufficient to cope with it. In order to increase vertical resolution, an optical system is so configured to perform detection by differential interference in which beams of light are sheared in two-dimensional directions in a plane perpendicular to an optical axis, thereby achieving zero-order light phase-difference detection. Further, the system is configured such that inconsistencies in brightness caused by thin-film interference, which appear as a noise component in a comparative inspection, are reduced by differential interference and dark-field illumination. Further, with respect to non-critical grains in metal wiring, the contrast of grains is reduced by bright-field/dark-field-combined illumination.

Abstract: A method of characterizing the outermost material on an article manufactured by deposition or removal of material from its surface, which requires no prior knowledge of the composition of the article.

Abstract: Horizontally oriented attenuated total reflection (HATR) system applied in spectroscopic ellipsometer or polarimeter systems, and methodology of use.

Abstract: Techniques and devices for monitoring polarization of light using at least two polarization elements where the difference between the outputs of the two polarization elements are used to monitor a change in polarization.

Abstract: Disclosed is a system for enabling easy sequential setting of different Angles-of-Incidence of a beam of electromagnetic radiation to a surface of a sample system involving regression based methodology for evaluating and compensating the effects of the presence electromagnetic beam intercepting angle-of-incidence changing systems, including where desired, parameterization of calibration parameters.

Abstract: A method for polishing a thin film formed on a substrate includes planarizing a thin film formed on a reference substrate by a CMP process such that the thin film remains on the reference substrate. After the planarizing, the thin film is cleaned, and then values of ? and ? with respect to the cleaned thin film are measured by ellipsometry. A physical property of the thin film is determined based on the ? and ? which have been measured by ellipsometry, and a polishing condition for an other substrate having a thin film to be polished is set based on physical property data which are obtained by the determining of the physical property.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: A method of determining optical constants n and k for a film on a substrate is described. Optical measurements are preferably performed with an integrated optical measurement system comprising a reflectometer, spectral ellipsometer, and broadband spectrometer such as an Opti-Probe series tool from Therma-Wave. A beam profile reflectometer is employed to first determine the thickness of said film from a best fit of modeling data to experimental data. The thickness data is combined with the ellipsometer and spectrometer measurements to produce an experimental data output which is fitted with modeled information to determine a best fit of the data. Constants n and k are derived from the best fit of data. The method provides a higher accuracy for n and k values than by standard procedures which calculate n, k, and t simultaneously. The method may also be applied to bilayer or multi-layer film stacks.

Abstract: This application describes designs, implementations, and techniques for controlling propagation mode or modes of light in a common optical path, which may include one or more waveguides, to sense a sample.

Abstract: A photoacoustic system with ellipsometer, where the ellipsometer includes a laser light source for generating an incident beam, an element for focusing the incident beam on a sample, a unit for measuring the change in amplitude of the incident beam on reflection and a unit for measuring the phase difference of the incident beam on reflection. The system further includes an element to convert an input narrow spectrum beam generated by the laser light source to a broadband sample measurement beam that is focused onto the sample.

Abstract: A system for analyzing a thin film uses an energy beam, such as a laser beam, to remove a portion of a contaminant layer formed on the thin film surface. This cleaning operation removes only enough of the contaminant layer to allow analysis of the underlying thin film, thereby enhancing analysis throughput while minimizing the chances of recontamination and/or damage to the thin film. An energy beam source can be readily incorporated into a conventional thin film analysis tool, thereby minimizing total analysis system footprint. Throughput can be maximized by focusing the probe beam (or probe structure) for the analysis operation at the same location as the energy beam so that repositioning is not required after the cleaning operation. Alternatively, the probe beam (structure) and the energy beam can be directed at different locations to reduce the chances of contamination of the analysis optics.

Abstract: A combiner for optical beams includes a substrate overlaid by a multi-layer dielectric film stack. The substrate is a clear material and the dielectric film stack is a series of alternating layer of high and low refractive index. This gives the combiner relatively high reflectivity across UV wavelengths and relatively high transmissivity in the visible and longer wavelengths and allows visible light to pass through the combiner while UV light is reflected. At the same time dielectric film stack has minimal absorption and scatter. This means that the intensity of visible light maintains at least 90% of its intensity as it passes through combiner and UV light retains at least 90% of its intensity as it is reflected by combiner.

Abstract: An apparatus and method for optically characterizing the reflection and transmission properties of a sample with a beam of light having a small diameter on a surface of the sample over a broadband of wavelengths, from 190 nm to 1100 nm. Reflective optical components, including off-axis parabolic mirrors with a collimated incident or reflected broadband beam of light, minimize non-chromatic aberration. The apparatus and method further disclose an optical light path that can be focused by adjusting the position of an off-axis parabolic mirror and a planar mirror.

Abstract: Low aberration relay systems modified to perform as spatial filters in rotating compensator ellipsometer, polarimeter and the like systems.

Abstract: Spectroscopic ellipsometer system(s) mediated methodology for quantifying layer defining parameters in mathematical models of samples which contain a plurality of layers of different materials, at least some of which are absorbing of electromagentic radiation, wherein an acquired data set is not sufficient to allow definite one for one parameter evaluation, and wherein a global fit procedure can be applied to obtain good parameter starting values for use in a parameter evaluating regression procedure.

Abstract: According to one aspect of the present invention the optical interrogation system comprises: (i) an optical sensor capable of immobilizing biological, bio-chemical and/or chemical substance; and (ii) an optical isolator that filters and eliminates parasitic reflections introduced by the optical sensor. In some embodiments the optical sensor includes a GCW with a surface having a sensing region capable of immobilizing biological, bio-chemical or chemical substances includes, and the optical interrogation system includes an optical detection system for monitoring this sensing region, the optical detection system comprising a light source, an optical delivery system, and a detection instrument.

Abstract: Apparatus for inspection of a surface, including irradiating optics which are adapted to irradiate the surface with an irradiating beam having an adjustable polarization. The apparatus further includes at least one detector, each detector being associated with a respective analyzer having an orientation and adapted to generate signals in response to light received via the analyzer from an irradiated area on the surface, one of the at least one detector being adapted to receive scattered light from the irradiated area. The apparatus also includes a controller which is adapted to direct the irradiating optics to irradiate the irradiated area and which, in response to calibration signals generated thereby at the at least one detector, is adapted to set the adjustable polarization and the orientation of the respective analyzer of each detector.

Abstract: An apparatus for scatterometry measurements is disclosed. The apparatus includes a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample and the modulated optical response is measured. The measured data is subjected to a scatterometry analysis in order to evaluate geometrical sample features that induce light scattering.

Abstract: A polarization modulation photoreflectance technique has been developed for optical characterization of semiconductor electronic interfaces. By using a laser source in conjunction with polarization state modulation, a polarization modulation spectroscopy technique may be used to characterize the optical response of semiconductor materials and structures. Disclosed methods and instruments are suitable for characterization of optical signatures of electronic interfaces, including characterization of electric fields at semiconductor interfaces.

Abstract: An alignment target includes periodic patterns on two elements. The periodic patterns are aligned when the two elements are properly aligned. By measuring the two periodic patterns at multiple polarization states and comparing the resulting intensities of the polarization states, it can be determined if the two elements are aligned. A reference measurement location may be used that includes third periodic pattern on the first element and a fourth periodic pattern on the second element, which have a designed in offset, i.e., an offset when there is an offset of a known magnitude when the first and second element are properly aligned. The reference measurement location is measured at two polarization states. The difference in the intensities of the polarization states at reference measurement location and is used to determine the amount of the alignment error.