Abstract: Disclosed is a step-and-scan exposure method improved in exposure at a periphery of a wafer. An area illuminated by an exposure beam is made to relatively scan a shot area positioned at the wafer periphery from the outside of the wafer to the inside. Predetermined measurement points of a sensor for detecting positional information of a wafer with respect to a focal position of a projection optical system in the direction of the optical axis of the projection optical system are made to relatively scan along with the illumination area of the exposure beam. Focus control is performed to make the wafer move in the direction of the optical axis when only part of the selected predetermined measurement positions reach the wafer, and leveling control is performed in addition to adjust the tilt of the wafer when all of the selected predetermined measurement positions reach the wafer.

Abstract: A device for detecting the relative position of a generally horizontal reference plane of light includes a plurality of photodetector elements, a weighting circuit, and an output circuit. The photodetector elements are positioned on the device in a generally vertically oriented row. The weighting circuit provides a portion of the electrical output of each photodetector element as a first reference signal related to the spacing of the photodetector element from a first end of said row, and a portion of the electrical output of each photodetector element as a second reference signal related to the spacing of the photodetector element from the second end of said row. The output circuit is responsive to the weighting circuit for determining the relative levels of the first and second reference signals and the position of said reference plane of light with respect to the detector device.

Abstract: A device for aligning two machine shafts which are coupled to one another has:

Abstract: The exposure apparatus is provided in its main body portion with laser diodes each having different wave-lengths, for illuminating light for alignment onto a mark of a grating form arranged on each of a reticle and a wafer. The main body portion of the exposure apparatus has photomultipliers for receiving the diffraction light returned from each of the reticle mark and the wafer mark. The alignment of the reticle mark with the wafer mark is implemented by comparing phase differences of optical beat signals converted photoelectrically by the photomultipliers and by means of a phase detection comparison system. The light fluxes are transmitted between photomultipliers the laser diodes and the alignment optical system disposed in the main body portion thereof through optical fibers. This arrangement enables the position transducer to reduce an influence of generated heat upon the position detection of the wafer as well as the exposure apparatus, even if a photodetector having a large calorific power is employed.

Abstract: An optical monitor includes a body having a first plurality of parallel, substantially opaque, spaced apart lines thereon, and the second plurality of parallel, substantially opaque, spaced apart lines thereon, with a relatively small angle between the first and second pluralities of lines. A an image of the lines of the first plurality thereof is provided on the semiconductor body, upon relative movement of the monitor toward and away from the semiconductor body, the line images move relative to the semiconductor body. The images of the lines of the second plurality thereof provided on the semiconductor body move in a different manner upon relative movement if the monitor toward and away from the semiconductor body: The moiré fringe formed on the semiconductor body from images of the first and second plurality of lines during such movement is analyzed in order to achieve proper focus of the image on the semiconductor body.

Abstract: An object of the invention is to provide a position measuring apparatus which can measure position information of a mark formed on an object with high accuracy, and an exposure apparatus which can perform exposure by performing alignment highly accurately, based on the highly accurate position information measured by the position measuring apparatus, and as a result, can realize fine processing. In order to achieve the object, the present invention is a position information measuring apparatus for measuring position information of an alignment mark, by converting an image Im1 of an alignment mark formed on an image pickup plane F1 of an image pickup device into image information, while scanning the image Im1 in a scanning direction SC1, and performing calculation processing with respect to the obtained image information, wherein the measuring direction D11 of the image Im1 of the alignment mark is set so as to be orthogonal to the scanning direction SC1.

Abstract: Disclosed is a method, system, and lense system for performing lithography on a substrate. The system includes a unique lense system for nonplanar substrates. The lense system includes a first lense section for receiving a pattern and producing a concave image of the pattern. The concave image can the be received by a second lense section for producing a nonplanar image of the pattern. The system also includes two light sources and a digital imaging device for projecting and exposing the pattern through the lense section and onto the substrate. Light from the first light source is used for exposing the pattern while light from second light source is used for receiving an alignment image. An image sensor, using the light from the second light source, detects an alignment image from the substrate. The alignment image is used to accommodate the projection of the pattern onto the substrate so that the pattern is properly aligned to the substrate.

Abstract: A surface position detection apparatus includes a position detection section having a plurality of electrodes opposing an object surface to be measured, and a measurement device for selecting at least one electrode of the plurality of electrodes in accordance with the shape of the object surface, supplying an AC current to the selected electrode, and measuring the current flowing to the electrode, thereby measuring the distance between the electrode and the object surface.

Abstract: A projection exposure apparatus includes an illumination optical system for illuminating a reticle having a pattern, with illumination light supplied from a light source, a projection optical system for projecting the pattern onto a substrate by use of the illumination light, a measuring system for measuring angular distribution of the illumination light, and an adjusting system for changing angular distribution of the illumination light, entering the projection optical system, on the basis of measurement by the measuring system and in accordance with a distance from an optical axis.

Abstract: A system and method for performing alignment of a substrate using alignment marks on the backside of a substrate supported by a movable chuck is disclosed. The system includes an imaging optical system arranged such that the movable chuck can position one end of the optical system either adjacent the front surface of the substrate or near the front surface but outside the perimeter of the substrate. In one embodiment, secondary optical systems are arranged within the chuck at the chuck perimeter so as to be in optical communication with corresponding alignment marks. The chuck is movable so that the imaging optical system can be placed in optical communication with the second optical system and image the alignment marks onto a detector. The detector converts the alignment mark images into digital electronic images, which are stored in a computer system and processed. The chuck then moves the substrate to exposure locations based on the result of processing the images.

Abstract: An optical alignment system used in the manufacture of semiconductor integrated circuits determines and adjusts the alignment between features which have been formed on a semiconductor wafer and features on a mask which is being projected onto the semiconductor wafer. Light which illuminates the semiconductor wafer is scattered and diffracted into a dark-field detector system. This results in the generation of electrical signals which are used to position the mask relative to the semiconductor wafer. The use of polarized light in the present system results in an increase in the magnitude of the desired signals and a decrease in the magnitude of the spurious signals. To improve the quality of the signals, the angle of polarization of the light is adjusted to a specific relationship with respect to the geometry of the alignment marks on the semiconductor wafer.

Abstract: A phase-shifting alignment system for aligning a wafer in a stepper comprises a light source emitting a beam with a wavelength; a plurality of grating stripes formed on the wafer, wherein when the beam from the light source is incident upon the grating stripes, the wafer reflects a diffraction beam; a filter unit positioned on the optical path of the diffraction beam, such that the diffraction beam travels through the filter unit so as to generate a convolution beam; a positive lens having a front focal length, a back focal length and an optical axis and positioned on the optical path of the convolution beam so as to generate Fourier transform of the convolution beam at the back focal length, wherein the distance between the positive lens and the filter unit is the front focal length; and an image-receiving means positioned at the back focal length of the lens so as to receive the Fourier transform of the convolution beam on the optical axis of the lens.

Abstract: The imaging signal (the raw waveform) and the modified waveform are obtained, wherein the raw waveform is obtained from the image of the mark which is picked-up by the image pick-up device, and the modified waveform is obtained through the modification of the imaging signal by the waveform modifying unit. By using respective raw wave form and modified waveform, the mark information calculating unit obtains the mark information for the mark position such as estimated mark position and so forth. Then, the position calculating unit detects the positional information of the mark based on the plural mark information in the obtained mark information. As a result, the mark position might be precisely detected depending on the figure of the noise signal.

Abstract: A projection exposure apparatus for exposing a photosensitive substrate with a pattern on a circular mask by projection through a projection optical system. The apparatus includes a prealignment stage for previously correcting an error of the circular mask in its rotational direction, and a transport arm and a rotatable arm for transporting the circular mask from the prealignment stage to a mask stage. The prealignment stage includes an optical detecting system for detecting the rotational error of the circular mask from a predetermined orientation on the prealignment stage, a rotatable stage for rotating the circular mask on the prealignment stage, and a unit for controlling the rotatable stage on the basis of the rotational error so that the circular mask has the predetermined orientation. Orientational adjustment can be previously performed before importing the circular mask to the mask stage of the projection exposure apparatus.

Abstract: An exposure apparatus is arranged to project one unit of a circuit pattern onto the surface of a resist on a substrate to be manufactured and to expose it over the surface of this resist. The exposure apparatus includes a processing unit that enables forming a high-resolution circuit pattern image on the substrate by the use of an image display which is able to ensure a wide display region without deteriorating the resolution, and that when dividing the one unit of circuit pattern into a plurality of regions in order to ensure an inexpensive, reliable exposure operation, divides it so that adjacent ones of the divided regions may partly overlap each other. An exposure device includes a plurality of optical systems each of that projects one of a plurality of the divided regions onto the surface of the resist on the substrate.

Abstract: A stage device includes a first stationary member, a second stationary member, a moving member and positioning devices. The first stationary member extends in a first direction. The second stationary member extends in the first direction and is spaced apart from the first stationary member in a second direction perpendicular to the first direction. The moving member can cooperate with the first stationary member and with the second stationary member. The positioning devices selectively position the moving member into cooperation with one of the first and second stationary members without physically contacting the moving member with the first and second stationary members. In addition, a stage device provided with a moving member that can move within a two-dimensional plane having a first direction and a second direction perpendicular to the first direction includes a first stationary member and a second stationary member.

Abstract: A projection exposure apparatus (10) for forming an image of a pattern present on a first object such as a reticle (R) onto a second object, such as a wafer (W). The apparatus comprises along three optical axes (AZ1, AX, AZ2), an illumination optical system capable of illuminating the reticle with partially polarized light, and a catadioptric projection optical system (40-70) arranged adjacent the reticle and opposite the illumination optical system. The catadioptric projection optical system comprises one or more substantially spherical mirrors (48), a plurality of refractive members (42, 48, 72, 74), and one or more plane mirrors (60, 66). The plane mirrors are designed and arranged so as to allow a substantially unpolarized image of the reticle pattern, which is illuminated with partially polarized light, to be formed on the wafer.

Abstract: A CO2 laser beam 12 is converted into a beam of uniform intensity at the position of a phase matching element 15 by an intensity converting element 14 and the phase matching element 15. Then, the uniform intensity beam irradiates a mask 17 containing an aperture variable in size via a variable-magnification projecting optical system 16. At the time of irradiation, the laser beam at the position of the phase matching element 15 is projected onto the mask 17 at a magnification factor most suited to the size of the aperture formed in the mask 17. Further, the pattern of the mask 17 is projected onto a workpiece 19. Thus, a uniform intensity distribution of the laser beam is obtained on the workpiece and high quality laser processing becomes possible.

Abstract: A system and a method for positioning an autonomous mobile unit for docking, wherein a slot-shaped light beam which stands perpendicular to the drive surface of the unit is provided, which beam is emitted by a docking device, and position-sensitive detectors for this light beam are present on the unit, these being arranged parallel to the drive surface of the unit. With the aid of the light beam and of the detectors, the precise rotation (beta) of the unit relative to the docking device can be determined, whereby the unit learns its approximate configuration in space by means of ultrasound or odometry measurements. With this guidance, the unit can dock very precisely at a docking device in order to be able to take on goods or to drive into a garage, for example. Position-sensitive detectors, or photodiodes are provided as receptors for the light beam. The present invention preferably can be used in household robots or in industrial cleaning robots.

Abstract: A method and an automated apparatus for three-dimensional optical alignment of optical components for testing or assembly purposes comprise use of a visible light vision system to assist active alignment of optical components based on the measured optical output at a wavelength of light outside of the visible range.

Abstract: A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.

Abstract: The invention relates to a lighting system for a projection lighting system that comprises: a light source (1) that emits light of wavelengths of ≦193 nm, especially wavelengths between 10 nm and 20 nm; a collector unit (30, 32) for illuminating a mirror device that produces secondary light sources (14), said mirror device comprising at least one mirror (34) that is subdivided into grid elements (10, 40, 42, 100, 102); a diaphragm plane (16); one or more optical elements (36, 38) that represent the diaphragm plane (16) in the exit pupil (390) of the lighting system; an object plane (39) in which the images of the grid elements are substantially in line and illuminate a predetermined filed with an intensity distribution; an optical element (30, 310, 320, 330) that produces an intensity distribution in the exit pupil (390) that is defined by the kind and/or filling degree, said kind and/or filling degree of the intensity distribution being modifiable buy exchanging, displacing or deforming the optical elemen

Abstract: In a scanning exposure apparatus and method, first and second interferometers of an interferometer system monitor first and second stages of a stage system, one of which holds a mask and the other of which holds a substrate. The first stage is moved at a first scanning speed during scanning exposure, and the second stage is moved at a second scanning speed during the scanning exposure, the speeds differing in accordance with a projecting magnification of a projection unit. The first stage is moved in accordance with a deviation, obtained by using the interferometer system, between the first stage and the second stage in a direction other than the scanning direction during the scanning exposure.

Abstract: Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed simultaneously within the substrate an alignment mark and an isolation trench formed employing a single etch method and to an identical depth within the substrate. There is then formed within the isolation trench an isolation region. Finally, there is then further processed the substrate while aligning the substrate while using the alignment mark in conjunction with a minimum of two alignment wavelengths. The method provides for enhanced efficiency when fabricating the microelectronic fabrication. The method contemplates a microelectronic fabrication fabricated employing the method.

Abstract: An illumination apparatus includes an optical integrator for illuminating a target plane by using light emitted from a light source, the illumination apparatus forming an approximately rectangular illuminated area by using light emitted from the optical integrator that includes a first optical system for enlarging the beam in a longitudinal direction of the illuminated area, and a second optical system for enlarging the beam in a lateral direction of the illuminated area, wherein a light exit plane of the first optical system is provided closer to the target plane than that of the second optical system.

Abstract: A method and apparatus are disclosed for aligning an array of light transmitting elements to an array of photosensitive detectors. The array is adjusted along three axes. Any element (a coupled transmitting and detecting unit of the array) can be selected as the center of rotation. Small angular correction is made about the selected element by differentially moving the array in two axes, using adjustment tools. Alignment is accomplished by performing translational movement in the horizontal X and Y axes until a signal is detected. A rotational correction about the selected element is performed by moving one of a pair of adjustment devices until maximum light intensity is achieved for the end elements. Next, the array is scanned for the weakest performing element in the array. The alignment procedure is repeated until the performance of all of the elements in the array fall within a pre-established specification range.

Abstract: There is disclosed an exposure method for transferring, using an optical system for illuminating a mask having patterns to be transferred on a substrate and a projection optical system for projecting images of the patterns to the substrate, the patterns to the substrate through the projection optical system by means of scanning the mask and the substrate synchronously relative to the projection optical system. The method comprises the steps of providing a plurality of measuring marks on the mask formed along a relative scanning direction, and providing a plurality of reference marks formed on the stage corresponding to the measuring marks, respectively, moving the mask and the substrate synchronously in the relative scanning direction to measure successively a displacement amount between the measuring marks on the mask and the reference marks, and obtaining a correspondence relation between a coordinate system on the mask and a coordinate system on the stage according to the displacement amount.

Abstract: An exposure apparatus includes a projection optical system for projecting exposure light, with which a reticle formed with a pattern is irradiated, onto a wafer, a stage for holding and aligning the wafer or reticle, an alignment optical system for outputting alignment light, a reflection mirror provided on the stage, and a plurality of interferometers for measuring the position of the stage by irradiating the reflection mirror with measurement light. The interferometer to be used to measure the position of the stage in a predetermined direction is switched to another in accordance with whether the stage is aligned to the projection optical system or to the alignment optical system.

Abstract: A method and apparatus is provided to identify material boundaries and assist in the alignment of pattern masks in semiconductor fabrication. The invention probes a layer step or feature edge of an individual wafer using spectroscopic reflectance to detect a change in the reflectance spectral response. In integrated circuit fabrication, a wafer is subjected to wafer fabrication processes to produce a number of individual layers on a semiconductor substrate. During processing a reflectometer, a light emitting and collecting device, emits a specific range of electromagnetic wavelengths which are reflected from the wafer surface. The intensity of the reflected light is monitored for changes which signify the detection of a feature edge. The use of a specific range of electromagnetic wavelengths with the reflectometer allows the apparatus to detect feature edges covered by visibly-opaque material.

Abstract: Transmittances of the optical system are calculated and a predicitive line of time-varying transmittance is calculated. When the exposure is started, the transmittance of the optical system is calculated at the elapsed time of exposure based on the predictive line of time-varying transmittance, and the intensity of exposure light is controlled The illuminance on the wafer can be compensated for depending on the actual variation of the transmittance. The accumulated quantity of exposure light incident to the wafer is regulated to ensure a target exposure dose of the wafer regardless of the variation in the transmittance of an illumination optical system or a projection optical system during exposure.

Abstract: An exposure system having an exposure apparatus for transferring a pattern of a first object onto a second object, which includes an exposure apparatus having a detecting system for performing relative alignment of the first object and the second object, a transmitting system for transmitting, to a remote location and through a public data line, a mark detection signal obtained by detection of a mark of the second object made by use of the detecting system and shape information obtained by measurement of a shape of the mark on the second object, and a calculating system for performing calculation of an offset of the exposure apparatus, at the remote location. The calculating system transmits information, including the offset, to the exposure apparatus and through the public data line, and, on the basis of the information including the offset, alignment of the first and second objects is executed by using the detecting system and an exposure process is performed in the exposure apparatus.

Abstract: A method and apparatus for imaging an overlying conductive pattern over an underlying conductive pattern on a substrate, by determining deviations between the actual locations and the nominal locations of predetermined reference targets in the underlying conductive pattern on the substrate; and utilizing the determined deviations for modifying the scanning control data used for imaging the image data of the overlying conductive pattern in order to reduce misregistration thereof with respect to the underlying conductive pattern. Preferably, the reference targets are predetermined connection sites in the underlying conductive pattern to be precisely located with respect to connection sites in the overlying conductive pattern. The reference features may be assigned different weights according to their registration importance, and the deviations may be determined according to a threshold which varies with the weight assigned to the respective reference feature.

Abstract: An integrated optical communications receiver/alignment system and method. In one embodiment, a method and an apparatus are disclosed in which a semiconductor substrate includes a plurality of outer optical detectors disposed in the substrate. An optically transparent center region such as for example an optical waveguide or an optical fiber is integrated in the semiconductor substrate in a central location relative to the plurality of outer optical detectors. The optically transparent center region is optically coupled to receive an optical communications beam and the plurality of outer optical detectors are employed for alignment and/or tracking purposes.

Abstract: An apparatus for exposing a pattern, formed on a mask, on each of a plurality of partitioned areas on a photosensitive substrate by a step-and-repeat scheme includes a projection optical system for projecting the pattern of the mask on the photosensitive substrate, a substrate stage for holding the photosensitive substrate and two-dimensionally moving the photosensitive substrate within a plane perpendicular to the optical axis of the projection optical system, a detection unit for projecting a pattern image having a predetermined shape on the photosensitive substrate and photoelectrically detecting light reflected by the photosensitive substrate to detect a position at each of a plurality of points on the photosensitive substrate along the optical axis of the projection optical system, and a measurement unit for, when each of a plurality of measurement points in a partitioned area on which a pattern of the mask is to be exposed next coincides with or approaches the pattern image, detecting an offset amount b

Abstract: Motion of a block carrying a grid for backscattering portions of a pattern of charged particles incident on the grid is moved generally axially of a charged particle beam tool while the position of the block is measured, preferably to optically, with a grazing incidence laser beam or interferometer, in the axial direction for any or all of the degrees of freedom of the block. Backscatter is correlated with known grid position to correct the backscatter measurement to compensate for lateral components of motion parallel to the target plane in measurement of actual beam position at different axial locations. Telecentricity and landing angle can thus be observed to an accuracy of 0.003 milliradians in substantially real time; permitting substantially real time adjustment thereof. The basic principles of this process and apparatus can be extended to measurement of numerical aperture and are equally applicable to probe-forming and beam projection lithography tools.

Abstract: In a lithographic apparatus the shape of the focal plane is adjusted using available manipulators in the projection lens system so that it is in closer conformity to the shape of the wafer surface in the exposure area. The control of the focal plane shape can be integrated with the leveling control which determines the height and tilt of the wafer surface.

Abstract: In a method and device for detecting the position of components, the relative position of terminals and/or edges of components relative to a transport device is obtained using a camera with an image evaluation unit connected downstream that obtains an image containing the terminals together with a position marking securely connected to the transport device. The position marking is itself located in the immediate vicinity of the terminals or is imaged at such a location via an optical imaging element. A more precise position detection is assured. A fast position detection is also realized given a moving transport device and a short exposure time for the imaging by the camera.

Abstract: The effectiveness of a method for checking for exact alignment of two successive shafts, axles or the like is improved by the fact the no measures with respect to linearization or temperature compensation are necessary any longer by using a light-sensitive array as the light-sensitive sensor. The effects of outside light and reflections can be suppressed. The cross section and the quality of a detected laser beam can be checked especially by visual inspection. Production of the corresponding device for executing this process is facilitated. By using matched beam splitters and reflectors as well as light sources of different colors the number of optoelectronic sensors necessary can be significantly reduced.

Abstract: A scanning exposure apparatus in which a mask and a substrate are moved in a first direction while images of patterns of the mask are exposed onto the substrate includes at least a pair of projection optical systems that are spaced from each other in the first direction by a predetermined distance. The pair of projection optical systems also are displaced from each other in a second direction that is perpendicular to the first direction such that at least portions of projection areas where the images of the pattern are projected by the pair of projection optical systems onto the substrate overlap each other. The scanning exposure apparatus also includes a shifter that shifts the images of the overlapping projection areas on the substrate in the second direction. This enables the measurement of the flatness tolerance of long planar mirrors that are used in controlling the positions of the mask and the substrate to be easily made.

Abstract: A computer system comprises a first computer into which target information that an optical apparatus is to achieve is inputted and a second computer that determines the specification of a projection optical system based on the target information received from the first computer via a communication path with using a wave-front aberration amount, which the projection optical system is to satisfy, as a standard. Therefore, in the process of making the projection optical system, higher-order components of the aberration as well as lower-order components can be simultaneously corrected by adjusting the projection optical system based on the result of measuring the wave-front aberration to satisfy the specification, so that the making process becomes simpler. Furthermore, the target that the exposure apparatus is to achieve is securely achieved due to the projection optical system.

Abstract: A method for measuring a reticle leveling in a semiconductor exposure device includes the steps of loading a reticle onto a stage of an exposure device, the reticle having a main cell region and a plurality of grating patterns at outer sides of the main cell region, directing a light from a light source to the plurality of grating patterns measuring electrical signals based on aerial images formed by the light passed through the grating patterns, and comparing the electrical signals and offsetting a reticle level if a substantial difference exists.

Abstract: An apparatus for aligning components is disclosed. The apparatus includes a light source, a scattering plate for scattering light emitted from the light source towards the side of the component, a focus lens for focusing the scattered light having passed through the component, and a light detector for receiving the focused light from the focus lens to detect a side image of the component.

Abstract: Positions of reticle and stage fiducial marks (16, 15) are measured from image signals that are output by a camera (9) that simultaneously receives reflected light from the reticle fiducial mark (16) and reflected light from the stage fiducial mark (15). An image, which is obtained from an image signal representing the reticle fiducial mark (16), is stored in an image memory (11a) in such a manner that lightness of the image is increased to a predetermined lightness, and the reticle fiducial mark (16) and stage fiducial mark (15) are measured from image signals representing respective ones of the reticle fiducial mark (16) and stage fiducial mark (15).

Abstract: A method and system for determining a tool center point (TCP) for a beam tool involves the use of a specially design aperture and light sensing device. The method and system oscillates the beam tool across an aperture assembly such that light from the tool periodically passes through the aperture assembly. Center point coordinate information is then determined based on passage of light through the aperture assembly. The method and system further provides for calculating the TCP based on the center point coordinate information.

Abstract: A scan type projection exposure apparatus which includes an illumination optical system for forming a slit-shaped illumination area on a pattern on a mask by using illuminating light, and a projection optical system for forming an image of a portion of the pattern in the illumination area on a substrate, includes: a mask stage which moves at least in one direction while holding the mask; a substrate stage which moves two-dimensionally while holding the substrate; a control system for synchronously scanning the mask stage and the substrate stage; and an image forming performance adjusting system for adjusting image forming performance of the projection optical system and having a component placed in an area through which the illuminating light incident from the illumination area on the mask to the projection optical system does not pass.

Abstract: Vibrational movement between the top of a lens and a main plate on which the lens is mounted is reduced by attaching between the lens and the main plate a lens support which detects relative movement between the lens and the main plates using piezoelectric sensors and compensates for that movement to reduce vibration using piezoelectric actuators which are in series with the piezoelectric sensors. The control signal which is generated to actuate the actuated piezoelectrics is generated by a controller.

Abstract: A lithographic projection apparatus comprising an illumination system; a support structure for holding a mask; a substrate table for holding a substrate; a projection system for projecting a pattern onto a target portion of the substrate; and an interferometric measurement system for measuring wave front aberrations of the projection system, characterized in that the interferometric measurement system comprises: a grating, featuring a grating pattern in a grating plane, said grating being movable into and out of the projection beam, such that the grating plane is substantially coincident with said object plane; a pinhole, featuring a pinhole pattern in a pinhole plane and arranged in a pinhole plate, said pinhole being movable into and out of the projection beam, such that the pinhole plane is substantially coincident with a plane downstream of the projection system and optically conjugate to said object plane, and a detector with a detector surface substantially coincident with a detection plane, said detect

Abstract: A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The first and second sections of each test set is positioned proximate to the second and first sections of the next test set, respectively. This mark allows two beams which scan the mark to travel over both a test section formed on one layer of the device and a test section formed on the other of the two layers. Scanning multiple test sets provides multiple registration error values which are then averaged to obtain an average registration error value.

Abstract: An apparatus has a pulse light source for emitting light pulses with varying light quantities, an illumination optical system for radiating the light pulses from the source onto a predetermined illumination region on a mask on which a transfer pattern is formed, and a projection optical system for projecting an image of the pattern onto a predetermined exposure region on a substrate, and which synchronously scans the mask and the substrate during the projection. The apparatus includes a measuring device for detecting intensities of the light pulses radiated onto the substrate during the scanning and measuring an integrated light quantity on each of a plurality of partial regions in the exposure region on the substrate on the basis of a detection signal of the intensities, wherein the partial regions are defined by a scanning speed of the photosensitive substrate and an oscillation interval of the light pulses.

Abstract: A high speed high precision laser based alignment sensor system for use on surface mount component placement machines. A laser system is utilized to correctly align and position component parts which range between 0.02 inches and 2.0 inches in size. The laser sensor system consists of a laser light source which is passed through a collimating lens and then through an aperture to create a stripe of collimated laser light which is focused past the component being aligned to strike a multi-element CCD sensor array. The sensor system is mounted directly on the carrying mechanism for the surface mount component placement machine. During transit of the component between the bin of components is to be placed, the component is rotated and the shadow which falls on the detector array is monitored.