Abstract: The present application provides an optical system and a method of operating an overlay measuring apparatus. The overlay measuring apparatus is adapted to determine relative positions of two or more successive patterned layers of a device. The overlay measuring apparatus includes a stage and an imaging assembly. The device is placed on the stage. The imaging assembly includes a plurality of optical heads and a plurality of overlay marks assembled on the optical heads. The relative positions of the two or more successive patterned layers of the device are determined using light reflected from the device and passing through the overlay mark mounted on the respective optical head.

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

Abstract: A method for correcting misregistration measurements of a semiconductor wafer for errors therein arising from tilt of the wafer including measuring, for at least one location on a wafer, a difference between a Tool Induced Shift (TIS) of a metrology device in a first illumination arrangement with respect to the wafer wherein a surface of the wafer is generally orthogonally illuminated by an illumination source of the metrology device and a TIS of the metrology device in a second illumination arrangement with respect to the wafer, wherein the surface is obliquely illuminated by the illumination source, and correcting a misregistration measurement measured by the metrology device at the at least one location for errors therein arising from tilt of the wafer at the location by subtracting from the misregistration measurement a weighted value of the difference between the TIS in the first and second illumination arrangements.

Abstract: A measurement system in which an object that moves toward a processing position serves as a measurement target. In the processing position a processing device is capable of applying processing to the object. The measurement system includes: a mark detection device that has an irradiation system to irradiate a mark provided at the object that is moving with a measurement beam while moving the measurement beam; and a beam receiving system to receive a beam from the mark. The irradiation system irradiates the object with the measurement beam while moving the measurement beam, during a period when the object moves toward the processing position.

Abstract: The present invention provides an imprint apparatus that performs a process of forming an imprint material on a substrate using a mold, with respect to each of a plurality of shot regions on the substrate, the apparatus comprising: a detector configured to detect positions of marks provided in the substrate; and a controller configured to control, in the process, alignment between the substrate and the mold based on a detection result by the detector, wherein each of the plurality of shot regions includes two or more transfer regions where a pattern of an original has been individually transferred in a pre-process, and in the process on a specific shot region, the controller controls the alignment based on the detection result of the marks provided in the transfer region other than the smallest transfer region among the two or more transfer regions.

Abstract: A method for positioning sensor units in a detector module for a CT device includes arranging a connecting layer on a positioning substrate. Sensor units and readout units, forming sensor readout arrangements, are positioned relative to the positioning substrate. The sensor units are temporarily connected to the positioning substrate at a fixed position by the connecting layer. Electronics boards are positioned, and conductive connections are produced between the electronics boards and contacts of the readout units, such that sensor boards are obtained. The sensor units are then positioned by the positioning substrate relative to a module carrier and are attached to the module carrier, such that a detector module is obtained.

Abstract: A system for measuring a target grating includes an illumination source, a reference transmission grating, a pupil filter, and a detector. The illumination source is disposed to generate an incident light beam that illuminates the reference transmission grating. The reference transmission grating splits the incident light beam into a plurality of diffraction orders. The plurality of diffraction orders interrogates a target grating. The reference transmission grating and the target grating are parallel. The pupil filter allows transmission of a subset of diffraction orders of light that has been diffracted and/or reflected from the target grating after being split again by passing through the reference transmission grating. The detector takes a measurement of the subset of diffraction orders of light after transmission through the pupil filter.

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

Abstract: A method for detecting a mark using a detection apparatus including a detection unit includes performing a first movement process that moves the detection unit to a first position, performing a second movement process that moves the detection unit to a second position, detecting the mark after the first movement process and the second movement process, and correcting a measurement value of the detected mark using first information about a movement of the detection unit in the first movement process and second information about a movement of the detection unit in the second movement process.

Abstract: A device and method for alignment of a first contact surface of a first substrate with a second contact surface of a second substrate which can be held on a second platform includes first X-Y positions of first alignment keys located along the first contact surface, and second X-Y positions of second alignment keys which correspond to the first alignment keys and which are located along the second contact surface. The first contact surface can be aligned based on the first X-Y positions in the first alignment position and the second contact surface can be aligned based on the second X-Y positions in the second alignment position.

Abstract: Methods and systems for monitoring the quality of a semiconductor measurement in a targeted manner are presented herein. Rather than relying on one or more general indices to determine overall measurement quality, one or more targeted measurement quality indicators are determined. Each targeted measurement quality indicator provides insight into whether a specific operational issue is adversely affecting measurement quality. In this manner, the one or more targeted measurement quality indicators not only highlight deficient measurements, but also provide insight into specific operational issues contributing to measurement deficiency. In some embodiments, values of one or more targeted measurement quality indicators are determined based on features extracted from measurement data.

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

Abstract: An overlay mark, an overlay measurement method using the same, and a manufacturing method of a semiconductor device using the same are provided. The overlay mark is for measuring an overlay based on an image, is configured to determine a relative misalignment between at least two pattern layers, and includes first to fourth overlay marks. The first overlay mark has a pair of first Moire patterns disposed on a center portion of the overlay mark. The second overlay mark has a pair of second Moire patterns disposed so as to face each other with the first Moire patterns interposed therebetween. The third overlay mark has a pair of third Moire patterns disposed on a first diagonal line with the first Moire patterns interposed therebetween. The fourth overlay mark has a pair of fourth Moire patterns disposed on a second diagonal line with the first Moire patterns interposed therebetween.

Abstract: The present invention provides a measurement method including while driving a measurement target region of a surface of a substrate in a first direction with respect to a measurement unit, obtaining first measurement information indicating a height of the measurement target region in each of a plurality of first measurement lines parallel to the first direction and different from each other by measuring each measurement line by the measurement unit, and while driving the measurement target region with respect to the measurement unit in a second direction crossing all of the plurality of first measurement lines, obtaining second measurement information indicating a height of the measurement target region in one second measurement line parallel to the second direction by measuring the second measurement line by the measurement unit.

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

Abstract: A method for manually reading a code marked on an article having a first main face on a first side and a second main face, opposite the first main face, on a second side, wherein, with the article being fixed, a portable device equipped with an optical imaging system including at least one optical sensor is positioned on the first side of the article so as to place the optical sensor facing the code in a reading direction corresponding to the observation direction of the imaging system, and wherein, with the code being illuminated by a light source located on the second side of the article, at least one image of the code is acquired by the optical imaging system.

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Abstract: Embodiments of the present disclosure relate to optical devices for augmented, virtual, and/or mixed reality applications. In one or more embodiments, an optical device metrology system is configured to measure a plurality of see-through metrics for optical devices.

Abstract: A metrology target includes a first target structure formed within at least one of a first area and a third area of a first layer of a sample, where the first target structure comprises a plurality of first cells containing one or more first cell pattern elements; and a second target structure formed within at least one of a second area and a fourth area of a second layer of the sample, the second target structure comprising a plurality of second cells containing one or more second cell pattern elements.

Abstract: An optical metrology system may include an overlay metrology tool for characterizing an overlay target on a sample, where the overlay target includes first-direction periodic features in a first set of layers of the sample, and second-direction periodic features in a second set of layers of the sample. The overlay metrology tool may simultaneously illuminate the overlay target with first illumination beams and second illumination beams and may further generate images of the overlay target based on diffraction of the first illumination beams and the second illumination beams by the overlay target, where diffraction orders of the first illumination beams contribute to resolved image formation of only the first-direction periodic features, and where diffraction orders of the second illumination beams contribute to resolved image formation of only the second-direction periodic features. The system may further generate overlay measurements along the first and second measurement directions based on the images.

Abstract: A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.

Abstract: A light detection and ranging (LIDAR) controller is disclosed. The LIDAR controller may determine, based on a position of an implement, a scan area of the LIDAR sensor, wherein the scan area has an increased point density relative to another area of a field of view, of the LIDAR sensor, that includes the implement. The LIDAR controller may cause the LIDAR sensor to capture, with the increased point density, LIDAR data associated with the scan area. The LIDAR controller may process the LIDAR data to determine whether an object of interest is in an environment of the machine that is associated with the scan area. The LIDAR controller may perform an action based on the environment of the machine.

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

Abstract: A misregistration measurement and region of interest selection system (MMRSS) for measuring misregistration between at least two layers on a wafer in the manufacture of semiconductor devices, the MMRSS including a set of misregistration metrology tools, including at least two misregistration metrology tools, and a misregistration analysis and region of interest selection engine operative to: analyze a plurality of misregistration measurement data sets associated with a set of regions of interest (ROIs) of at least one measurement site on the wafer and at least partially generated by at least one first misregistration metrology tool, and wherein each of the data sets is associated with a set of quality metrics, identify a recommended ROI and communicate the recommended ROI to at least one second misregistration metrology tool of the set of misregistration metrology tools, the second misregistration metrology tool being operative to generate misregistration metrology data associated with the recommended ROI.

Abstract: Display device includes a flexible substrate, a plurality of pixels disposed on a first surface of flexible substrate, and a plurality of alignment marks disposed along one side of the flexible substrate and identified each other. The plurality of alignment marks may be arranged in the same layer. When the plurality of pixels includes thin film transistor, the plurality of alignment marks may be formed of the same metal layer as the metal layer forming thin film transistor.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: Disclosed is a method for detecting a shadow in an image of an eye region of a user wearing a Head Mounted Device, HMD. The method comprises obtaining, from a camera of the HMD, an image of the eye region of the user wearing a HMD and determining an area of interest in the image, the area of interest comprising a plurality of subareas. The method further comprises determining a first brightness level for a first subarea of the plurality of subareas and determining a second brightness level for a second subarea of the plurality of subareas. The method further comprises comparing the first brightness level with the second brightness level, and, based on the comparing, selectively generating a signal indicating a shadow.

Abstract: A photomask for negative-tone development (NTD) includes a main region, and a scribe lane region surrounding the main region and including a first lane and a second lane. The first and the second lane is provided at first opposite sides of each other with respect to the main region. The first lane includes a first sub-lane extending in a first direction and a second sub-lane that extending in the first direction. The first sub-lane includes a first dummy pattern and the second sub-lane includes a second dummy pattern. The first dummy pattern and the second dummy pattern are configured to radiate light exceeding a threshold dose of light to a first portion of a negative-tone photoresist provided under the first lane of the photomask.

Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.

Abstract: A method of determining a position of a feature (for example an alignment mark) on an object (for example a silicon wafer) is disclosed. The method comprises determining an offset parameter, determining the second position; and determining a first position from the second position and the offset parameter, the position of the mark being the first position. The offset parameter is a measure of a difference in: a first position that is indicative of the position of the feature; and a second position that is indicative of the position of the feature. The offset parameter may be determined using a first measurement apparatus and the second position may be determined using a second, different measurement apparatus.

Abstract: Embodiments disclosed herein include a method of determining the position of a sensor wafer relative to a pedestal. In an embodiment, the method comprises placing a sensor wafer onto the pedestal, wherein the sensor wafer comprises a first surface that is supported by the pedestal, a second surface opposite the first surface, and an edge surface connecting the first surface to the second surface, wherein a plurality of sensor regions are formed on the edge surface, and wherein the pedestal comprises a major surface and an annular wall surrounding the sensor wafer. In an embodiment, the method further comprises determining a gap distance between each of the plurality of sensor regions and the annular wall. In an embodiment, the method may further comprise determining a center-point offset of a center-point of the sensor wafer relative to a center point of the annular wall from the gap distances.

Abstract: A metrology target is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology target includes a first set of pattern elements having a first pitch, where the first set of pattern elements includes segmented pattern elements. The metrology target includes a second set of pattern elements having a second pitch, where the second set of pattern elements includes segmented pattern elements. The metrology target includes a third set of pattern elements having a third pitch, where the third set of pattern elements includes segmented pattern elements.

Abstract: Provided is a position measurement apparatus in which a measurement error in a target is reduced. A position measurement apparatus measuring a position of a target includes an illumination unit configured to illuminate the target with illumination light including light of a first wavelength and light of a second wavelength different from the first wavelength, a measurement unit configured to measure the position of the target by detecting light from the target illuminated with the illumination light, and a control unit configured to adjust a ratio of a light intensity of the first wavelength to a light intensity of the second wavelength such that a measurement error varying depending on the position of the target in the measurement unit is reduced.

Abstract: An image-based overlay metrology system is disclosed. The system includes a controller couplable to a metrology sub-system. The controller is configured to receive a set of image signals of a first metrology target disposed on the sample from the metrology sub-system and determine a plurality of harmonic detectivity metric values by calculating a harmonic detectivity metric value for each of the plurality of image signals. The controller is also configured to identify a set of optical measurement conditions of the metrology sub-system based on the plurality of harmonic detectivity metric values, wherein the set of optical measurement conditions define a recipe for optical metrology measurements of the metrology sub-system. The controller then provides the recipe to the metrology sub-system for execution of one or more optical metrology measurements of one or more additional metrology targets.

Abstract: A scatterometer for measuring a property of a target on a substrate includes a radiation source, a detector, and a processor. The radiation source produces a radiated spot on the target. The scatterometer adjusts a position of the radiated spot along a first direction across the target and along a second direction that is at an angle with respect to the first direction. The detector receives radiation scattered by the target. The received radiation is associated with positions of the radiated spot on the target along at least the first direction. The detector generates measurement signals based on the positions of the radiated spot on the target. The processor outputs, based on the measurement signals, a single value that is representative of the property of the target. The processor also combines the measurement signals to output a combined signal and derives, based on the combined signal, the single value.

Abstract: An overlay metrology system may include, an illumination sub-system, a collection sub-system and a controller. The illumination sub-system may include one or more illumination optics configured to direct an illumination beam to an overlay target on a sample as the sample is scanned along a stage-scan direction by a translation stage, where the overlay target includes one or more cells having a grating-over-grating structure with periodicity along the stage-scan direction. The collection sub-system may include an objective lens, a first photodetector located in a pupil plane at a location of overlap between 0-order diffraction and +1-order diffraction, and a second photodetector located in a pupil plane at a location of overlap between 0-order diffraction and ?1-order diffraction. The controller may receive time-varying interference signals from the first and second photodetectors and determine an overlay error between the first and second layers of the sample along the stage-scan direction.

Abstract: Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a ?1st diffraction order and a 0th diffraction order and a second measurement signal comprising a +1st distraction order and a 0th diffraction order, wherein the ?1st diffraction order of the first measurement signal and the +1st diffraction order of the second measurement signal are diffracted at 180° to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0th diffraction order may be split to yield components which interact with the ?1st and +1st diffraction orders.

Abstract: A position detection apparatus configured to detect a pattern including a plurality of pattern elements formed on an object includes a control unit configured to detect the pattern by performing pattern matching between a template including a plurality of feature points and the plurality of pattern elements. While, performing pattern matching, the control unit changes positions of the plurality of feature points such that a correlation between an image and the template is within a predetermined allowable range.

Abstract: A back alignment mark on a surface of a semiconductor substrate is detected and a resist mask patterned into a circuit pattern corresponding to a surface element structure is formed on a back of the semiconductor substrate. Detection of the back alignment mark is performed by using a detector opposing the back of the semiconductor substrate and measuring contrast based on the intensity of reflected infrared light irradiated from the back of the semiconductor substrate. The back alignment mark is configured by a step formed by the surface of the semiconductor substrate and bottoms of trenches formed from the surface of the semiconductor substrate. A polysilicon film is embedded in the trenches. The back alignment mark has, for example, a cross-shaped planar layout in which three or more trenches are disposed in a direction parallel to the surface of the semiconductor substrate.

Abstract: An acquiring unit of a structured illuminating microscopy apparatus acquires at least two modulated images having the same wave number vector and the different phases; and a calculating unit of the structured illuminating microscopy apparatus, in a spatial frequency spectrum of each of at least the two modulated images acquired by the acquiring unit, separates a 0th-order modulating component and ±first-order modulating components of observational light fluxes superimposed on arbitrary two observation points based on at least four observation values regarding the two observation points which are mutually displaced by an amount of the wave number vector.

Abstract: The present invention provides a method for performing high dynamic range low inter-pixel spatial and wavelength crosstalk optical image detection in a camera comprising an Optical Array Device (OAD), a point Photo Detector (PD) and a Photo Detector Array (PDA) sensor. The method comprises imaging incident light from an object onto an image plane of the Optical Array Device (OAD) to form an incident image map; selecting by the OAD and the Point Photo Detector and by the OAD and the Photo Detector Array a plurality of pixels on the incident image map for time-frequency coding; time-frequency coding the selected pixels by the OAD; detecting by the point PD the optical irradiance values of the time-frequency coded pixels output from the OAD; and performing signal processing on the detected optical irradiance values to determine the light intensity of each of the selected pixels.

Abstract: Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.

Abstract: A printing device is provided comprising a camera to capture an image of at least a portion of a print substrate; a controller to determine a location of a portion of a side edge of the substrate from the image to determine a distance of the print substrate from a predetermined location; and adjustment apparatus to adjust the entire substrate laterally, relative to the direction of transport of the substrate, based on the determined location.

Abstract: Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.

Abstract: A display device including: a substrate having display area and a non-display area; and an alignment mark disposed in the non-display area of the substrate. The alignment mark includes a quadrangular-shaped center portion and a plurality of measurement portions that surround the center portion, the plurality of measurement portions including four or more measurement portions, and each of the measurement portions including sides that are parallel with two sides of the quadrangular-shaped center portion.

Abstract: Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.

Abstract: Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.

Abstract: An imprint apparatus performs an imprint process by bringing a mold into contact with an imprint material arranged on a shot region of a substrate and curing the imprint material. The apparatus includes a controller configured to execute, in a case where an elapsed time from the supplying of the imprint material to the shot region until the contact with the mold falls outside an allowable range of a predetermined elapsed time, adjustment processing of adjusting an amount of the imprint material on the shot region at the timing of the contact.

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

Abstract: An electronic device includes a stack assembly and a cover glass. The stack assembly includes an electrophoretic display sub-assembly for rendering content, a front light sub-assembly comprising a light guide, a light FPC, and a plurality of light sources, and a capacitive touch sensing sub-assembly for detecting touch inputs. A yellow-pigmented tape is applied over the light sources and an edge of the light guide. A stiffener member is coupled to the light FPC opposite the yellow-pigmented tape.