Abstract: A method includes a first step of forming a circuit pattern and an alignment mark on a substrate and a second step of measuring a position of the alignment mark and positioning the substrate. The alignment mark includes a first linear pattern arranged on one side of a first straight line, a second linear pattern arranged on the other side of the first straight line, a third linear pattern arranged on one side of a second straight line, and a fourth linear pattern arranged on the other side of the second straight line. The first step includes determining total number of the third and fourth linear patterns to be formed and total number of the first and second linear patterns to be formed based on required precisions in directions along the first and second straight lines.

Abstract: A position measurement system includes a first part and a second part for determining a position of a first member relative to a second member by providing a position signal representing a position of the first part relative to the second part, and a computational unit comprising an input terminal for receiving the position signal. The computational unit is configured to, in use, apply a conversion to the position signal to obtain a signal representing a position of the first member relative to the second member; and apply an adjustment to the conversion to at least partly compensate for a drift of the first part or the second part or both. The adjustment is based on a predetermined drift characteristic of the first part or the second part or both respectively. The predetermined drift characteristic includes one or more base shapes of the first part and/or the second part.

Abstract: A visual error calibration method configured to calibrate visual positioning errors of a laser processing apparatus is provided. The method includes: providing an alignment mark having at least one alignment point; locating a preset point of the alignment mark at a first preset position of a working area, and locating a preset image point at a preset position of the visible area; locating the alignment point at one of the second preset positions in the working area; adjusting parameters of a scanning module to locate an alignment image point at the preset position; relatively moving the alignment image point to positions of the visible area in sequence; recording the positions of the alignment image point in the visible area, the positions of the alignment point in the working area and the parameters of the scanning module, so as to produce an alignment table.

Abstract: A scatterometer, configured to measure a property of a substrate, includes a radiation source which produces a radiation spot on a target formed on the surface of the substrate, the size of the radiation spot being smaller than the target in one direction along the target, the position of the radiation spot being moved along the surface in a series of discrete steps. A detector detects a spectrum of the radiation beam reflected from the target and produces measurement signals representative of the spectrum corresponding to each position of the radiation spot. A processor processes the measurement signals produced by the detector corresponding to each position of the radiation spot and derives a single value for the property.

Abstract: An exposure method comprises: a first detection step of detecting a position of a first mark by a first scope; a second detection step of detecting a position of a second mark by a second scope having a magnification higher than the first scope; a first calculation step of calculating a first correction value based on the detection results obtained in the first and second detection steps; a third detection step of detecting a position of a third mark by the second scope after the substrate is aligned based on the first correction value calculated in the first calculation step; a second calculation step of calculating a second correction value based on the detection results obtained in the second and third detection steps; and an exposure step of exposing the substrate after the substrate is aligned based on the second correction value calculated in the second calculation step.

Abstract: One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.

Abstract: A target space ratio of a monitor pattern on a substrate for inspection is determined to be different from a ratio of 1:1. A range of space ratios in a library is determined to include the target space ratio and not include a space ratio of 1:1. The monitor pattern is formed on a film to be processed by performing predetermined processes on the substrate for inspection. Sizes of the monitor pattern are measured. The sizes of the monitor pattern are converted into sizes of a pattern of the film to be processed having a space ratio of 1:1, and processing conditions of the predetermined processes are compensated for based on the sizes of the converted pattern of the film to be processed. After that, the predetermined processes are performed on a wafer under the compensated conditions to form a pattern having a space ratio of 1:1 on the film to be processed.

Abstract: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (?S1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (?S2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (?S1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (?S2) associated with the second scatterometry cell.

Abstract: Within area where of four heads installed on a wafer stage, heads included in the first head group and the second head group to which three heads each belong that include one head different from each other face the corresponding areas on a scale plate, the wafer stage is driven based on positional information which is obtained using the first head group, as well as obtain the displacement (displacement of position, rotation, and scaling) between the first and second reference coordinate systems corresponding to the first and second head groups using the positional information obtained using the first and second head groups. By using the results and correcting measurement results obtained using the second head group, the displacement between the first and second reference coordinate systems is calibrated, which allows the measurement errors that come with the displacement between areas on scale plates where each of the four heads face.

Abstract: Various embodiments of machine vision systems, methods, and devices are disclosed for providing passive alignment of an optical component to an electrical device. One embodiment is a method for passively aligning an optical subassembly to an electrical subassembly. One such method comprises: a machine vision system positioning an optical subassembly relative to an electrical subassembly; the machine vision system capturing an image of the optical subassembly; the machine vision system processing the image to identify an alignment member formed on the optical subassembly; and the machine vision system determining a first position of the optical axis of the optical subassembly based on a second position of the alignment member.

Abstract: An example embodiment relates to an alignment device including an optical aligner system including a plurality of aligners configured to measure a position of a workpiece having a plurality of alignment marks, and an optical member. The optical member is configured to diverge alignment beams reflected from neighboring alignment marks of the plurality of alignment marks and transmit the beams to neighboring aligners of the plurality of aligners respectively if a distance between the neighboring aligners is greater than a distance between the neighboring alignment marks.

Abstract: An arrangement for providing passive alignment of optical components on a common substrate uses a set of reference cavities, where each optical device is positioned within a separate reference cavity. The reference cavities are formed to have a predetermined depth, with perimeters slightly larger than the footprint of their associated optical components. The reference cavity includes at least one right-angle corner that is used as a registration corner against which a right-angle corner of an associated optical component is positioned. The placement of each optical component in its own reference cavity allows for passive optical alignment to be achieved by placing each component against its predefined registration corner.

Abstract: The invention provides a structure for critical dimension and overlay measurement including a measuring unit, a first measurement pattern for measuring overlay and a second measurement pattern for measuring linewidth, line density and/or line semi-density. The first target pattern includes an outer bar structure disposed on a first layer and an inner bar structure disposed on a second layer; the outer bar structure and/or the inner bar structure has a same shared pattern structure with the second target pattern. The pattern structure includes four bars with the same shape positioned orthogonally and closely to each other, and at least two orthogonally positioned bars include N equally spaced rectangular lines of the same width, wherein, N is an odd number; the N rectangular lines include one central rectangular line and N?1 auxiliary rectangular lines.

Abstract: One embodiment relates to a method for overlay sampling. The method provides a number of fields over a semiconductor wafer surface. An inner subgroup of the number of fields includes fields in a central region of the wafer surface. An outer subgroup of the number of fields includes neighboring fields near a circumferential edge of the wafer surface. The method measures a first number of overlay conditions at a corresponding first number of overlay structures within a field of the inner subgroup. The method also measures a second number of overlay conditions at a corresponding second number of overlay structures within a field of the outer subgroup. The second number is greater than the first number. Based on the measured first number of overlay conditions and the measured second number of overlay conditions, the method determines an alignment condition for two or more layers on the semiconductor wafer surface.

Abstract: A process of measuring overlay metrologies of wafers, the wafer having a plurality of patterned layers. The process begins with retrieving historical overlay metrologies from a database, and real overlay metrologies of a first group of the wafers are measured. On the other hand, virtual overlay metrologies of a second group of the wafers are calculated with the retrieved historical overly metrologies. The real overlay metrologies of the first group of the wafers and the virtual overlay metrologies of the second group of the wafers are stored to the database as the historical overlay metrologies.

Abstract: According to one embodiment, a measurement mark includes: a first line pattern, first lines extending in a first direction, the first lines arranged in a second direction in the first line pattern, the first line pattern capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern; a second line pattern, second lines extending in the first direction, the second lines being arranged in the second direction in the second line pattern, the second line pattern capable of forming a second moire pattern by overlapping with the arrangement pattern; and a reference pattern with a reference position configured to assess a first shift amount from the reference position of the first moire pattern and a second shift amount from the reference position of the second moire pattern.

Abstract: According to one embodiment, there is provided a semiconductor device including a circuit area in which an integrated circuit is formed, a position misalignment checking mark of which a contrasting density is detected under polarized illumination and is not detectable under non-polarized illumination, and a peripheral pattern that is disposed on a periphery of the position misalignment checking mark and has a contrasting density that is not detectable under the polarized illumination.

Abstract: Method for determining wheel alignment of a vehicle, which vehicle comprises at least one wheel axle (12, 13, 14) having an axle end with at least one wheel member (2a-b, 3a-b, 4a-b) at a respective longitudinal side of the vehicle. The method comprises steps for determining the out of square of the wheel axle in relation to the longitudinal geometric centerline of the vehicle. A system for carrying out the method is also described.

Abstract: A display apparatus to be inspected includes: a display panel in which pixel groups are arranged; and an optical element for providing image display for N viewpoints (N is a natural number more than one) from the pixel groups. An inspection apparatus includes: a image output device for outputting a test pattern including image signals different in the respective viewpoints to the display apparatus; and an extraction device for extracting the slope and the position of a boundary line segment in an inspection image displayed on the display apparatus. The extraction device detects positional accuracy between the display panel and the optical element on the basis of the slope and the position extracted by the extraction device.

Abstract: A method of monitoring combustion properties in an interior of a boiler of the type having walls comprising a plurality of parallel steam tubes separated by a metal membrane. First and second penetrations are provided in the metal membrane between adjacent tubes on opposite sides of the boiler. A beam of light is projected through a pitch optic comprising a pitch collimating lens and a pitch relay lens, both residing outside the boiler interior. The pitch relay lens projects the beam through a penetration into the boiler interior. The beam of light is received with a catch optic substantially identical to the pitch optic residing outside the boiler interior. The strength of the collimated received beam of light is determined. At least one of the pitch collimating lens and the catch collimating lens may then be aligned to maximize the strength of the collimated received beam.

Abstract: An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength ?LED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness ?S. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength ?A that is in the range from about 2?S to about 8?S. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.

Abstract: A method of correcting an overlay includes setting a reference map having information relating to predetermined positions of a substrate. An overlay value is measured at each of the predetermined positions to obtain a plurality of overlay measurement values. The plurality of overlay measurement values is applied to a polar coordinate function to calculate a correlation coefficient of the polar coordinate function. The polar coordinate function uses coordinate values of the predetermined positions as parameters.

Abstract: A method and system align a laser diode on a first substrate to a waveguide on a second substrate. The first substrate includes an edge and a first surface adjoining the edge. The laser diode has an emission exit on the edge. The second substrate includes a back side and a side edge. The waveguide has a waveguide input on the back side and directs light along the side edge. A first alignment mark set on the first substrate is aligned to a second alignment mark set on the second substrate. The first alignment mark set corresponds to the emission exit, is formed on the first surface and is visible from the edge. The second alignment mark set corresponds to the waveguide input, is formed on the side edge, and is visible from the back side. The first substrate's edge is affixed to the second substrate's back side.

Abstract: An optical arrangement for the non-contact measurement or testing of properties of a solid's surface, such as curvature, shape, contour, roughness or alignment. An optical arrangement includes structure for establishing a gap between the solid's surface and a reference edge, structure for imaging the gap on a detector, and an analyzing system connected to the detector. The analyzing system is designed to determine gap widths lying adjacent to each other on the basis of the output signals of the detector, and to determine curvature, shape, contour or roughness of the solid's surface on the basis of the gap widths lying adjacent to each other. From the comparison of the images obtained from any two positions within a drilled hole, deductions can be made, among other things, about any tilt between the measuring object and the measuring system.

Abstract: This alignment device is furnished with an alignment light source for emitting alignment light, and is housed with a camera for example. The alignment light source emits alignment light, doing so, for example, coaxially with respect to the optical axis of light detected by the camera. The alignment light illuminates a substrate and mask, and reflected light is detected by the camera. A microlens array for exposure use is present between a mask alignment mark and a substrate alignment mark, whereby an erect unmagnified image reflected from the substrate alignment mark is formed on the mask. A control device then uses the mask alignment mark and the substrate alignment mark detected by the camera to perform alignment of the substrate and the mask. Alignment of the substrate and the mask can be performed with high accuracy thereby.

Abstract: According to an example embodiment, a method to determine an exposure start position and orientation includes loading a substrate on a moving table. The substrate includes at least one alignment mark of a first set of alignment marks of a first pattern layer patterned thereon. At least one alignment mark of a second set of alignment marks of a second pattern layer is exposed on the substrate using maskless lithography. A position of the at least one alignment mark of the first set of alignment marks and a position of the at least one alignment mark of the second set of alignment marks on the substrate is measured. A relative orientation difference between a desired exposure start orientation and an obtained exposure start orientation is acquired using the measured positions of the at least one alignment mark of the first set of alignment marks and the at least one alignment mark of the second set of alignment marks.

Abstract: A system is disclosed for remotely determining 6 degree of freedom of an object. Four or more radiating beacons are placed on an object, the beacons each simultaneously radiating a synchronized repeating code, the code being different for each beacon. A position sensor, such as a quadrant detector, receives the light signals from the beacons, and correlates the received beacon signals against the same signal sequences produced in the receiver. With orientation of the beacons on the object being known, and orientation of the quadrant detector, or receiver, being known, roll, pitch, yaw, and X, Y and Z position in a coordinate space of the object can be determined.

Abstract: A method and associated apparatus determine an overlay error on a substrate. A beam is projected onto three or more targets. Each target includes first and second overlapping patterns with predetermined overlay offsets on the substrate. The asymmetry of the radiation reflected from each target on the substrate is measured. The overlay error not resultant from the predetermined overlay offsets is determined. The function that enables calculation of overlay from asymmetry for other points on the wafer is determined by limiting the effect of linearity error when determining the overlay error from the function.

Abstract: A method of aligning a substrate and an imprint template is disclosed. The method includes directing an alignment radiation beam towards an imprint template alignment mark and an adjacent substrate alignment mark, the imprint template alignment mark and the substrate alignment mark each including a grating which extends in a first direction and a grating which extends in a second direction, providing relative movement between the imprint template and the substrate in the first direction and in the second direction, using an intensity detector to detect the intensity of alignment radiation redirected in the zero-order direction by the imprint template alignment mark and the substrate alignment mark during the relative movement in the first direction and in the second direction, and determining an aligned position of the imprint template alignment mark and the substrate alignment mark based upon the detected intensity.

Abstract: An apparatus for aligning a display substrate includes a substrate seater, a mark identification light reflective plate on the substrate seater, wherein the display substrate is positioned on the substrate seater and includes an alignment mark including a black organic film, and wherein the mark identification light reflective plate overlaps the alignment mark of the display substrate positioned on the substrate seater.

Abstract: One embodiment of a method for finding an aim position of a measuring device may include building a color model for an imaging device, initializing a color encoding image, displaying or printing the image on the imaging device, acquiring measurement with the measuring device, converting the measurement into imaging device code values using the color model, calculating said aim position from said device code values. The color encoding image sets one-to-one relationship between coordinates and colors. The image is output on the imaging device and measured by the measuring device. The measurement is converted using the color model to the device code values. The aim position then calculated from position of the device code values in the encoding image.

Abstract: A stacking apparatus that stacks chip assemblies each having a plurality of chips disposed continuously with circuit patterns and electrodes, includes: a plurality of stages each allowed to move arbitrarily, on which the chip assemblies are placed; a storage unit that stores an estimated extent of change in a position of an electrode at each chip, expected to occur as heat is applied to the chip assemblies placed on the plurality of stages during a stacking process; and a control unit that sets positions of the plurality of stages to be assumed relative to each other during the stacking process based upon the estimated extent of change in the position of the electrode at each chip provided from the storage unit and position information indicating positions of individual chips formed at the chip assemblies and controls at least one of the plurality of stages.

Abstract: Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns formed thereon. The first and second patterns extend in a first direction, and the third pattern extend in a second direction perpendicular to the first direction. The second pattern is separated from the first pattern by a first distance measured in the second direction. The third pattern is separated from the first pattern by a second distance measured in the first direction. The third pattern is separated from the second pattern by a third distance measured in the first direction. The first distance is approximately equal to the third distance. The second distance is less than twice the first distance.

Abstract: In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced.

Abstract: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

Abstract: A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

Abstract: An apparatus and method to determine overlay of a target on a substrate (6) by measuring, in the pupil plane (40) of a high numerical aperture len (L1), an angle-resolved spectrum as a result of radiation being reflected off the substrate. The overlay is determined from the anti-symmetric component of the spectrum, which is formed by subtracting the measured spectrum and a mirror image of the measured spectrum. The measured spectrum may contain only zeroth order reflected radiation from the target.

Abstract: A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.

Abstract: A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.

Abstract: For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.

Abstract: Disclosed is a method for appointing an orientation flat, in which when there are a plurality of orientation flats with the same length, any one from among the orientation flats of the same length can be certainly appointed as a reference orientation flat. In the disclosed method, three orientation flats at three positions are detected, respectively, through the rotation of a semiconductor wafer, the lengths of three circular arcs between the three orientation flats are obtained, respectively, and then an orientation flat at the right side of the longest circular arc from among the three circular arcs is appointed as a reference orientation flat. Accordingly, it is possible to certainly appoint a reference orientation flat even though there exist a plurality of circular arcs with the same length.

Abstract: According to one embodiment, an alignment measurement system is configured to measure a position of a mark having the highest identifiability of a plurality of marks formed in a substrate. The plurality of marks are made of mutually different patterns. A device pattern is formed in the substrate using directed self-assembly after the plurality of marks is formed.

Abstract: A patterning device, including alignment targets having alignment features formed from a plurality of diffractive elements, each diffractive element including an absorber stack and a multi-layered reflector stack is provided. The diffractive elements are configured to enhance a pre-determined diffraction order used for pre-alignment and to diffract light in a pre-determined direction of a pre-alignment system when illuminated with light of a wavelength used for the pre-alignment. The diffractive elements may occupy at least half of an area of each alignment feature. The diffractive elements may be configured to enhance first or higher order diffractions, while substantially reducing zeroth diffraction orders and specular reflection when illuminated with a wavelength used for reticle prealignment. The dimensions of each diffractive element may be a function of a diffraction grating period of each alignment feature.

Abstract: An alignment mark may include: an elongate pattern having first and second end portions and a central portion located between the first and second end portions, wherein at least one of the first and second end portions has a larger width than the central portion.

Abstract: A lithography apparatus includes a projection system configured to project a radiation beam onto a substrate, a detector configured to inspect the substrate, and a substrate table configured to support the substrate and move the substrate relative to the projection system and the detector. The detector is arranged to inspect a portion of the substrate while the substrate is moved and before the portion is exposed to the radiation beam.

Abstract: A method for analysis of an object dyed with fluorescent coloring agents. Separately fluorescing visible molecules or nanoparticles are periodically formed in different object parts, the laser produces the oscillation thereof which is sufficient for recording the non-overlapping images of the molecules or nanoparticles and for decoloring already recorded fluorescent molecules, wherein tens of thousands of pictures of recorded individual molecule or nanoparticle images, in the form of stains having a diameter on the order of a fluorescent light wavelength multiplied by a microscope amplification, are processed by a computer for searching the coordinates of the stain centers and building the object image according to millions of calculated stain center co-ordinates corresponding to the co-ordinates of the individual fluorescent molecules or nanoparticles. Two-dimensional and three-dimensional images are provided for proteins, nucleic acids and lipids with different coloring agents.

Abstract: According to one embodiment, a positional deviation measuring method includes measuring a positional deviation of a device pattern formed in a lower layer portion using an alignment mark of the lower layer portion as a reference; measuring a positional deviation of a device pattern formed in an upper layer portion above the lower layer portion using an alignment mark of the upper layer portion as a reference; measuring a positional deviation between the alignment mark of the lower layer portion and the alignment mark of the upper layer portion; and calculating a positional deviation between the device patterns based on the positional deviation between the alignment marks.

Abstract: An offset amount calibrating method that obtains the offset amount between a contact-type detector and an image probe for a surface profile measuring machine is provided. The method includes: setting on a stage a calibration jig that has a surface being provided with a lattice pattern with a level difference; measuring the lattice pattern of the calibration jig by the contact-type detector to obtain a first reference position of the lattice pattern; capturing the image of the lattice pattern of the calibration jig by the image probe to obtain a second reference position of the lattice pattern; and obtaining the offset amount from a difference between the first and second reference positions.

Abstract: A method and system are presented for use in characterizing properties of an article having a structure comprising a multiplicity of sites comprising different periodic patterns, where method includes providing a theoretical model of prediction indicative of optical properties of different stacks defined by geometrical and material parameters of corresponding sites, said sites being common in at least one of geometrical parameter and material parameter; performing optical measurements on at least two different stacks of the article and generating optical measured data indicative of the geometrical parameters and material composition parameters for each of the measured stacks; processing the optical measured data, said processing comprising simultaneously fitting said optical measured data for the multiple measured stacks with said theoretical model and extracting said at least one common parameter, thereby enabling to characterize the properties of the multi-layer structure within the single article.

Abstract: An alignment feature disposed on a substrate, the alignment feature including a first lithographic pattern having a first aggregate geometric center point defined by a first sub-pattern comprising alignment marks having a first sub-pattern geometric center point arranged a distance (d0) in a first direction from the first aggregate geometric center point, and a second sub-pattern comprising alignment marks having a second sub-pattern geometric center point arranged the distance d0 in a reciprocal direction of the first direction from the first aggregate geometric center point.