Abstract: A wafer stage system with reciprocating wafer stage actuation control may include a wafer stage, a motor configured to actuate the wafer stage in a first and/or second direction along an axis, a first reciprocating mechanism configured to decelerate the wafer stage after the wafer stage is actuated to a desired position in the first direction, the first reciprocating mechanism configured to store energy captured while decelerating the wafer stage in the first direction, the first reciprocating mechanism configured to accelerate the wafer stage in the second direction, and a second reciprocating mechanism configured to decelerate the wafer stage after the wafer stage is actuated to a desired position in the second direction, the second reciprocating mechanism configured to store energy captured while decelerating the wafer stage in the second direction, the second reciprocating mechanism further configured to accelerate the wafer stage in the first direction.

Abstract: In an acoustic wave detection probe provided with a light guide section that guides measuring light such that the measuring light is outputted toward a subject and an acoustic wave transducer that detects a photoacoustic wave generated in the subject by the projection of the measuring light, the light guide section includes a homogenizer that flat-tops an energy profile of the measuring light entered from the upstream side of the optical system, a light condensing member that condenses the measuring light transmitted through the homogenizer, and a bundle fiber which includes a plurality of optical fibers and is disposed such that the measuring light transmitted through the light condensing member enters from an entrance end of the bundle fiber.

Abstract: Methods of determining asymmetric properties of structures are described. A method includes measuring, for a grating structure, a first signal and a second, different, signal obtained by optical scatterometry. A difference between the first signal and the second signal is then determined. An asymmetric structural parameter of the grating structure is determined based on a calculation using the first signal, the second signal, and the difference.

Abstract: An empirical diffraction based overlay (eDBO) measurement of an overlay error is produced using diffraction signals from a plurality of diffraction based alignment pads from an alignment target. The linearity of the overlay error is tested using the same diffraction signals or a different set of diffraction signals from diffraction based alignment pads. Wavelengths that do not have a linear response to overlay error may be excluded from the measurement error.

Abstract: A microscope including an illumination device providing a light sheet illuminating a sample region, said sheet having a planar extension along an illumination axis of an illumination beam path and a transverse axis lying normal to the illumination axis. A detection device detects light emitted from the sample region on a detection axis the illumination axis and detection axis as well as the transverse axis and the detection axis being oriented relative each other at an angle unequal zero. The detection device has a detection lens system arranged in the detection beam path and splitting means for splitting the detection beam path into two beam sub-paths. A dichroic beam splitter in the infinity region of the surface detectors is about 3 mm thick. Wobble plate(s) disposed orthogonal to each other relative to the detection axis arranged in one of the two beam sub-paths so measured values can be automatically superimposed.

Abstract: A mold system includes a carrier platform and an adjustment mechanism. The carrier platform is provided to arrange at least one mold member. The adjustment mechanism includes at least two adjustment units arranged on the carrier platform. Each of the adjustment units includes a positioning member and an electrically-driven adjustment member pivotally-connected therewith. In adjustment operation, the positioning members commonly engage with the mold member and are driven by the electrically-driven adjustment members.

Abstract: The present disclosure provides an integrated circuit structure that includes a semiconductor substrate having a first region and a second region having an area less than about 10 micron×10 micron; a first material layer over the semiconductor substrate and patterned to have a first circuit feature in the first region and a first mark in the second region; and a second material layer over the first material layer and patterned to have a second circuit feature in the first region and a second mark in the second region. The first mark includes first mark features oriented in a first direction, and second mark features oriented in a second direction perpendicular to the first direction. The second mark includes third mark features oriented in the first direction, and fourth mark features oriented in the second direction.

Abstract: A disappearing direction determination device and method, a video camera calibration apparatus and method, a video camera and a computer program product are provided. The device comprises: a moving target detecting unit for detecting in the video image a moving target area where a moving object locates; a feature point extracting unit for extracting at least one feature point on the moving object in the detected moving target area; a moving trajectory obtaining unit for tracking a movement of the feature point in a predetermined number of video image frames to obtain a movement trajectory of the feature point; and a disappearing direction determining unit for determining, according to the movement trajectories of one or more moving objects in the video image, a disappearing direction pointed by a major moving direction of the moving objects. Thus, a disappearing direction and video camera gesture parameters can be determined accurately.

Abstract: A method of determining overlay error. The method includes transferring a pattern from a reticle to a wafer and selecting a first set of data points to measure the positional difference between features on the reticle and features on the wafer. The method also includes determining a second set of data points characteristic of the first set of data points but containing fewer data points. A control system for using the second set of data points to dynamically adjust the position of the reticle.

Abstract: According to one embodiment of a method for measuring a stacking overlay error, the method may use a differential interference contrast microscope system to measure a stacking overlay mark and focus on one overlay mark of a lower layer overlay mark and an upper layer overlay mark when measuring the stacking overlay mark. Then, the method uses an image analysis scheme to obtain an image of the stacking overlay mark from a photo-detector and obtains a first reference position of the lower layer overlay mark in a direction and a second reference position of the upper layer overlay mark in the direction from the image; and computes the stacking overlay error in the direction according to the first and the second reference positions.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus.

Abstract: One embodiment relates to a method for overlay sampling. The method provides a number of fields over a semiconductor wafer surface. An inner subgroup of the number of fields includes fields in a central region of the wafer surface. An outer subgroup of the number of fields includes neighboring fields near a circumferential edge of the wafer surface. The method measures a first number of overlay conditions at a corresponding first number of overlay structures within a field of the inner subgroup. The method also measures a second number of overlay conditions at a corresponding second number of overlay structures within a field of the outer subgroup. The second number is greater than the first number. Based on the measured first number of overlay conditions and the measured second number of overlay conditions, the method determines an alignment condition for two or more layers on the semiconductor wafer surface.

Abstract: A lithographic apparatus is calibrated by reference to a primary reference substrate. Using an apparatus which need not be the same as the one being calibrated, there is obtained an apparatus-specific fingerprint of the primary reference substrate. Using the same set-up there is then obtained an apparatus-specific fingerprint of a secondary reference substrate. The apparatus-specific fingerprint of the primary reference substrate is subtracted from the apparatus-specific fingerprint of the secondary reference substrate to obtain and store an apparatus-independent fingerprint of the secondary reference substrate. The secondary reference substrate and stored apparatus-independent fingerprint are subsequently used together in place of the primary reference substrate as a reference for the calibration of the lithographic apparatus to be calibrated.

Abstract: Disclosed are devices and methods related to radio-frequency (RF) switches having silicon-on-insulator (SOI) field-effect transistors (FETs). In some embodiments, an RF switch can include an FET with shaped source, drain, and gate selected to yield a reduced per-area value of resistance in linear operating region (Rds-on). In some implementations, a plurality of such FETs can be connected in series to allow use of SOI technology in high power RF switching applications while maintaining a relatively small die size.

Abstract: A workpiece marking device operating automatically includes a support member, a transmission member, a feeding mechanism, a discharging mechanism, a driving mechanism, a positioning tool, and a marking mechanism. The transmission member conveys a workpiece, the feeding mechanism includes a driving assembly coupled to the support member and a lifting member coupled to the driving assembly. The discharging mechanism is positioned on the support member and above the transmission member. The discharging mechanism includes a driving assembly coupled to the support member and a lifting member coupled to the driving assembly of the discharging mechanism to move workpieces away after marking.

Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., ?d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

Abstract: Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.

Abstract: An imprint lithography apparatus is disclosed that includes a structure located away from a substrate holder and extending across the substrate holder, and such that an imprint template arrangement is, in use, located between the structure and the substrate holder, wherein the structure has one or more arrays of lines or one or more encoders, and the substrate or substrate holder and the imprint template have a corresponding one or more encoders that face towards one or more of the one or more arrays of lines or one or more arrays of lines that face towards one or more of the one or more encoders, and the configuration determination arrangement is configured to determine a relative configuration between the substrate or substrate holder and the structure, and/or a relative configuration between the imprint template arrangement and the structure, and/or a relative configuration between the imprint template arrangement and the substrate or substrate holder.

Abstract: Aspects of the present disclosure describe a target for use in measuring a relative position between two substantially coplanar layers of a device. The target includes periodic structures in first and second layers. Differences in relative position of the first and the second layers between the first and second periodic structures and the respective device-like structure can be measured to correct the relative position of the first and the second layers between the first and second periodic structures. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The present invention is related to the semiconductor manufacturing field, especially a method for monitoring alignment between contact holes and polycrystalline silicon gate by setting a plurality of equidistant contact holes with same sharp on poly-silicon and residual active area, and then obtain the process alignment profile of the quantized values in the plane in order to have a better control of process quality, thereby have a better control of the quality of the process.

Abstract: The present disclosure is directed to a system for measuring a thickness variation and a shape of a wafer. The system includes a first reference flat and a second reference flat. The first reference flat and the second reference flat are spaced apart to form a cavity. The cavity is configured to receive the wafer. The system also includes a plate. The plate may be inserted into the cavity with the wafer. The system also includes a first interferometer located on a first side of the cavity and a second interferometer located on a second side of the cavity. The system also includes a processor which may be in communication with the first interferometer and the second interferometer. The processor is configured to determine the thickness variation and the shape of the wafer based on at least the readings of the first interferometer and the second interferometer.

Abstract: A surface position detection apparatus capable of highly precisely detecting the surface position of a surface to be detected without substantially being affected by relative positional displacement due to a polarization component occurring in a light flux having passed through a reflective surface. In the apparatus, a projection system has a projection side prism member (7) having first reflective surfaces (7b, 7c), and a light receiving system has a light receiving prism member (8) having second reflective surfaces (8b, 8c) arranged in correspondence with the projection side prism member. The surface position detection apparatus further has a member for compensating relative positional displacement due to a polarization component of a light flux having passed through the first and second reflective surfaces.

Abstract: In the present invention, the number of brightness changes detected at the same position while a substrate moves by a certain distance is added up, a plurality of edge count data arranged corresponding to the detected positions of the brightness changes is obtained, a plurality of correlation value data by performing a correlation operation for the plurality of calculated edge count data while moving a template is obtained, positions of the plurality of patterns based on a plurality of correlation value data exceeding a predetermined threshold value are identified, a position of a pattern close to a target position of an imaging device is selected, and a photomask is moved in the direction substantially orthogonal to the conveying direction of the substrate so that the amount of the position displacement between the selected position of the pattern and the target position of the imaging device is a predetermined value.

Abstract: Disclosed are devices and methods related to field-effect transistor (FET) structures configured to provide reduced per-area values of resistance in the linear operating region (Rds-on). Typical FET devices such as silicon-on-insulator (SOI) device require larger device sizes to desirably lower the Rds-on values. However, such increases in size result in undesirably larger die sizes. Disclosed are various examples of shapes of source, drain, and corresponding gate that yield reduced Rds-on values without having to increase the device size. In some implementations, such FET devices can be utilized in high power radio-frequency (RF) switching applications.

Abstract: A semiconductor device comprising: a support part; a flexible part, one end of which is supported by the support part; a spindle part supported by the other end of the flexible part; a displacement detection means which detects displacement of the spindle part; and an aperture part arranged adjacent to the spindle part; wherein a plurality of patterns comprised from the aperture part is formed on a silicon wafer parallel to a first direction and a second direction which intersects the first direction, the plurality of patterns include one or more patterns arranged in a straight line in the first direction and the second direction, the plurality of patterns is arranged so that an axis in which a cleavage plane of the silicon wafer and a surface arranged with the pattern on the silicon wafer intersect, and the first direction are different.

Abstract: Overlay metrology systems are provided which include, for instance: a first metrology pattern including at least two first pairs of sub-patterns, at least one sub-pattern lacking 90 degree rotational symmetry, and a first center position for the first metrology pattern being determinable in an X-Y coordinate layout from the at least two first pairs of sub-patterns; and a second metrology including at least two second pairs of sub-patterns, at least one sub-pattern lacking 90 degree rotational symmetry, and a second center position for the second metrology pattern being determinable in the X-Y coordinate layout from the at least two second pairs of sub-patterns. Methods of making overlay metrology systems are also provided, which include, for instance, providing a first metrology pattern and a second metrology pattern, and arranging the metrology patterns in relation to each other within the X-Y coordinate layout.

Abstract: A method for analysis of an object dyed with fluorescent coloring agents. Separately fluorescing visible molecules or nanoparticles are periodically formed in different object parts, the laser produces the oscillation thereof which is sufficient for recording the non-overlapping images of the molecules or nanoparticles and for decoloring already recorded fluorescent molecules, wherein tens of thousands of pictures of recorded individual molecule or nanoparticle images, in the form of stains having a diameter on the order of a fluorescent light wavelength multiplied by a microscope amplification, are processed by a computer for searching the coordinates of the stain centers and building the object image according to millions of calculated stain center co-ordinates corresponding to the co-ordinates of the individual fluorescent molecules or nanoparticles. Two-dimensional and three-dimensional images are provided for proteins, nucleic acids and lipids with different coloring agents.

Abstract: An alignment mark determines alignment of a first and a second exposure on a substrate on a macro level and a micro level. The alignment mark includes a first alignment pattern projected during the first exposure and a second alignment pattern projected during the second exposure. The alignment mark includes a first sub-mark at least partially defined by the first alignment pattern and a second sub-mark at least partially defined by the second alignment pattern. Relative positions of the first and second sub-marks on the substrate are representative for alignment of the first and second exposures on the macro level. At least one sub-mark is defined by image lines of the first alignment pattern and the second alignment pattern, and wherein relative positions of image lines of the first alignment pattern and image lines of the second alignment pattern of the at least one sub-mark are representative for alignment of the first and second exposures on the micro level.

Abstract: An edge-dominant alignment method for use in an exposure scanner system is provided. The method includes the steps of: providing a wafer having a plurality of shot areas, wherein each shot area has a plurality of alignment marks; determining a first outer zone of the wafer, wherein the first outer zone includes a first portion of the shot areas along a first outer edge of the wafer; determining a scan path according to the shot areas of the first outer zone; and performing an aligning process to each shot area of the first outer zone according to the scan path and an alignment mark of each shot area of the first outer zone.

Abstract: An optical position-measuring device for detecting the relative position of two objects includes a measuring standard connected to one object, and a scanning unit connected to the other object and including a light source, one or more grating(s), and a detector system. The detector system includes a plurality of detector element groups arranged in a detection plane, via which a plurality of position-dependent, phase-shifted scanning signals is able to be generated by scanning a periodic fringe pattern that results in the detection plane, the detector elements that have in-phase scanning signals forming a group in each case. The sum of the areas and the centroid of the detector elements of a group is identical to the sum of the areas and the centroid, respectively, of the detector elements of each other group. Periodic diaphragm structures are arranged in front of the light-sensitive areas of the detector elements.

Abstract: A plurality of overlay errors in a structure is determined using a target that includes a plurality of diffraction based overlay pads. Each diffraction based overlay pad has the same number of periodic patterns as the structure under test. Additionally, each diffraction based overlay pad includes a programmed shift between each pair of periodic patterns. The pads are illuminated and the resulting light is detected and used to simultaneously determine the plurality of overlay errors in the structure based on the programmed shifts. The overlay errors may be determined using a subset of elements of the Mueller matrix or by using the resulting spectra from the pads.

Abstract: A drive system drives a movable body, based on measurement results of a first measurement system which measures the position of the movable body in an XY plane by irradiating a measurement beam from an arm member on a grating placed on a surface parallel to the XY plane of the movable body. In this case, because a configuration in which the arm member irradiates a measurement beam on the grating is employed, there is no adverse effect due to the drive of the moving body, unlike the case when an encoder system is arranged on a stage surface plate. Accordingly, it becomes possible to drive the movable body with good precision.

Abstract: A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract: According to one embodiment, a measurement mark includes: a first line pattern, first lines extending in a first direction, the first lines arranged in a second direction in the first line pattern, the first line pattern capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern; a second line pattern, second lines extending in the first direction, the second lines being arranged in the second direction in the second line pattern, the second line pattern capable of forming a second moire pattern by overlapping with the arrangement pattern; and a reference pattern with a reference position configured to assess a first shift amount from the reference position of the first moire pattern and a second shift amount from the reference position of the second moire pattern.

Abstract: A method and an apparatus are provided to measure a position of a mark with a less measurement error caused by a variation in a wafer process condition. The mark is illuminated with light and an image of the mark is formed, via an optical system, in a light receiving surface of a sensor. The image of the mark is sensed and image data thereof is acquired by the sensor. Correction data of a fundamental frequency and a high harmonic of the image data is set based on information associated with a shape of the mark, an imaging magnification of the optical system, and an imaging area of the sensor. The image data is corrected using the correction data, and the position of the mark is calculated using the corrected image data.

Abstract: A system for detecting intrusion across a surface, comprising a plurality of light sources projecting an array of illuminating beams along different optical paths in the surface and a detector array system directed such that it detects along a plurality of fields of view in the surface, illumination reflected from the illuminating beams. A signal processing system detects changes along the array of fields of view, in the reflected illumination level detected by the detector system. An increase greater than a predefined level in the reflected illumination level from any field of view provides an indication of an intrusion across the surveilled surface along that field of view, at the crossing point of the direction of that field of view with the optical path whose illuminating beam generated the increase in reflected illumination from that field of view.

Abstract: A maskless exposure apparatus which precisely and rapidly measures positions of spot beams of a plurality of optical systems by calculating positions of respective BMSs using a plurality of FMs engraved on an FBA on a movable table. The centers of the respective BMSs are aligned with the centers of random FMs of the plurality of FMs. Thereafter, positions of spot beams irradiated from the plurality of optical systems are quickly and precisely measured using the positions of the respective BMSs and the positions of the FMs measured by the BMSs, thereby more quickly generating mask data to execute maskless exposures.

Abstract: The throughput of the alignment in an alignment apparatus is improved. There is provided an alignment apparatus for aligning a substrate having an alignment mark, including a first aligner that aligns the substrate to a first reference position, a second aligner that aligns a substrate holder to a second reference position before the substrate holder holds the substrate, and a position detector that detects a position of the alignment mark of the substrate after the substrate holder holds the substrate.

Abstract: A method and system are presented for use in characterizing properties of an article having a structure comprising a multiplicity of sites comprising different periodic patterns, where method includes providing a theoretical model of prediction indicative of optical properties of different stacks defined by geometrical and material parameters of corresponding sites, said sites being common in at least one of geometrical parameter and material parameter; performing optical measurements on at least two different stacks of the article and generating optical measured data indicative of the geometrical parameters and material composition parameters for each of the measured stacks; processing the optical measured data, said processing comprising simultaneously fitting said optical measured data for the multiple measured stacks with said theoretical model and extracting said at least one common parameter, thereby enabling to characterize the properties of the multi-layer structure within the single article.

Abstract: Structures of a backside of a wafer can be aligned to structures of a frontside of the wafer for a lithographic treatment of the backside. The wafer is transparent for electromagnetic radiation of a specific wavelength. The wafer is placed on a wafer stage such that the frontside is facing the wafer stage and the backside is facing alignment optics. The backside is illuminated with electromagnetic radiation of the specific wavelength in a dark-field configuration, such that the electromagnetic radiation propagates through the wafer towards three-dimensional structures of a three-dimensional alignment target located at the frontside or inside the wafer and is scattered at the three-dimensional structures. The scattered electromagnetic radiation is captured with the alignment optics, and the backside is aligned to the frontside of the wafer based on the scattered electromagnetic radiation.

Abstract: In a lithographic apparatus, a slip of a patterning device relative to a support, the support constructed to support the patterning device, may be provided by measuring a position of the support relative to a first structure of the lithographic apparatus; measuring a position of the patterning device relative to a second structure of the lithographic apparatus; determining a correlation between the position of the patterning device and the position of the support from the measured position of the support, the measured position of the patterning device, and the mutual positions of the first and second structures; and deriving from the correlation a slip of the patterning device relative to the support. The structure may include a projection system to project a radiation beam patterned by the patterning device. The projection system may be connected to a frame, such as a metrology frame of the lithographic apparatus.

Abstract: To perform high-speed and highly accurate measurement by setting desired measuring conditions for each measuring object. In an alignment sensor of exposure apparatus, in the case of performing position measurement for a plurality of sample shots, measurement is performed by changing the measuring conditions, in response to a measuring axis direction, a mark or a layer whereupon a mark to be measured exists. At that time, for the measuring objects to be measured under the same measuring conditions, for example, a position in a Y axis direction and a position in an X axis direction, measurement is continuously performed. When the measuring condition is changed, a baseline value is remeasured. The changeable measuring conditions are wavelength of measuring light, use and selection of a retarder, NA and ? of an optical system, a light quantity of measuring light, illumination shape, signal processing algorithm, etc.

Abstract: An optical reader for interrogating an optical analyte sensor includes a housing, comprising in its interior: at least one light source, a detector, and a programmable logic device. The housing has a registration feature configured to align the optical reader with an optical analyte sensor. Methods for confirming alignment of such optical readers are also disclosed.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: An optical instrument aligns an optical beam without the need for physical intervention of the instrument within the apparatus or platforms from which the trajectory of the beam to be ascertained. The alignment apparatus and method enable the desired function to be realized without the placement of physical apertures or sensors directly in the path of the beam through the system whose spatial position and slope is to be sought. An image plane provides the observer with a pair of well-defined images that are indicative of the beam centering and pointing alignment parameters. The optical alignment can be realized without the need for referencing to an external or fixed set of coordinates or fiducials. The instrument can therefore service situations where adverse environments would otherwise prohibit the use of such instruments, including regions of high radiation, high temperature, vacuum and/or cryogenic atmospheres.

Abstract: A system for orienting a semiconductor wafer. The system includes a wafer retaining device configured to retain a semiconductor wafer, a light source configured to emit light toward an edge exclusion area of the wafer, and a lens configured to direct and focus light emitted from the light source at a subsurface first part of a first portion of the wafer to alter a crystalline structure of the subsurface first part and form a subsurface mark that is detectable using light of a predetermined wavelength, a predetermined transmittance through the wafer, and at a predetermined reflectance angle relative to an axis of rotation of the wafer and based on the predetermined wavelength.

Abstract: The present invention provides a processing method of processing a first signal obtained by detecting an alignment mark including a plurality of mark elements to obtain a position of the alignment mark, the method including steps of performing filtering to the first signal to generate a second signal, and obtaining the position of the alignment mark based on the second signal, wherein the filtering uses a plurality of filters by which a plurality of weights are respectively given to the plurality of mark elements, all of the plurality of weights being not the same for obtaining the position.

Abstract: An exposure apparatus for forming a predetermined pattern on a substrate by using exposure light, includes a stage apparatus which is movable with respect to an optical axis of the exposure light; a light-transmissive member provided at the stage apparatus, wherein a liquid is supplied on an upper surface of the light-transmissive member; and a measurement device which is settable below the light-transmissive member when measurement using the measurement device is performed. Leakage or entrance of a liquid used for exposure into an optical measurement device such as a wavefront aberration measurement device can be prevented, thereby enabling preferable optical adjustment such as imaging performance or optical characteristics.

Abstract: A system for overlay offset measurement in semiconductor manufacturing including a radiation source, a detector, and a calculation unit. The radiation source is operable to irradiate an overlay offset measurement target. The detector is operable to detect a first reflectivity and a second reflectivity of the irradiated overlay offset measurement target. The calculation unit is operable to determine an overlay offset using the detected first and second reflectivity by determining a predetermined overlay offset amount which provides an actual offset of zero.