Abstract: A photonic integrated circulator can be fabricated by including a plurality of polarizing beam splitters and optical polarization rotators such that two copies of the optical signal are output at a receiver in substantially aligned polarization states. The circulator can be used for facilitating bi-directional communications between photonic integrated circuit devices, which are inherently polarization sensitive, while reducing signal loss.

Abstract: A detection device includes an illumination optical system and a detection optical system. The illumination optical system is configured to illuminate a first diffraction grating having a first period in a first direction and a second diffraction grating having a second period different from the first period. The detection optical system is configured to detect light diffracted by the first and second diffraction gratings. The illumination optical system includes an optical member configured to form, on a pupil plane, a first pole and a second pole opposite to the first pole. The illumination optical system causes lights from the first and second poles to obliquely enter the first and second diffraction gratings from the first direction to illuminate the first and second diffraction gratings. The detection optical system detects diffracted light diffracted by one of the first and second diffraction gratings and by an other diffraction grating.

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

Abstract: An optical system and detector capture a distribution of radiation modified by interaction with a target structure. The observed distribution is used to calculate a property of the structure (e.g. CD or overlay). A condition error (e.g. focus error) associated with the optical system is variable between observations. The actual condition error specific to each capture is recorded and used to apply a correction for a deviation of the observed distribution due to the condition error specific to the observation. The correction in one practical example is based on a unit correction previously defined with respect to a unit focus error. This unit correction can be scaled linearly, in accordance with a focus error specific to the observation.

Abstract: A management device that, when a component is mounted on a substrate, acquires pickup source information that includes pickup position information of the mounted component and mounting destination information that includes mounting position information of the mounted component and memorizes mounting result information that links both the above information on an HDD. By referencing the mounting result information memorized on the HDD and obtaining the pickup source information from the mounting destination information of the mounted component, it is possible to identify the pickup position at the wafer from which the mounted component was picked up.

Abstract: Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

Abstract: Methods and systems are disclosed for determining overlay in a semiconductor manufacturing process. Radiation reflected from a diffraction pattern in a metrology target may include +1 and ?1 diffraction patterns at different wavelengths and focal positions. The different wavelengths of radiation may be in a waveband where the sensitivity of contrast to wavelength is at a maximum. The reflected radiation may be analysed to obtain measured values of overlay as well as amplitude and/or phase corresponding to points distributed over the target, for different wavelengths and focal positions. The measured values of overlay may undergo a series of operations to determine the overlay. The determination may use an assumption that the amplitude and phase are unequal in the +1 and ?1 diffraction orders.

Abstract: A measurement apparatus includes an image acquisition part that acquires a captured image obtained by imaging a partial area on a two-dimensional scale on which a plurality of two-dimensional codes having a first code, which is specified by a combination pattern of a first pixel value image and a second pixel value image, and a second code, which is specified by a pattern of a type different from the combination pattern, are arranged, a code specification part that specifies the first code and the second code corresponding to the two-dimensional code included in the captured image, and a position specification part that specifies position information on the two-dimensional scale of the two-dimensional code including the first code and the second code on the basis of the first code and the second code.

Abstract: According to one embodiment, in a position measuring method, alignment measurement in a light exposure process is executed by irradiating a first mark with light having a wavelength of ?1, with respect to a processing object that includes a first layer and a second layer stacked above a substrate and a resist applied on the second layer. The first mark is provided in the first layer and includes a plurality of segments arranged at a pitch smaller than a resolution limit given by light having the wavelength of ?1. Then, overlay measurement is executed by irradiating the first mark and a second mark with light having a wavelength of ?2 shorter than the wavelength of ?1. The second mark has been formed by performing a light exposure and development process to the resist, and includes a plurality of segments arranged at the pitch.

Abstract: Provided are an apparatus and a method for measuring a three dimensional shape with improved accuracy. The apparatus includes a stage, at least one lighting unit, a plurality of image pickup units and a control unit. The stage supports an object to be measured. The lighting unit includes a light source and a grid, and radiates grid-patterned light to the object to be measured. The image pickup units capture, in different directions, grid images reflected from the object to be measured. The control unit calculates a three dimensional shape of the object from the grid images captured by the image pickup units. The present invention has advantages in capturing grid images through a main image pickup portion and sub-image pickup portions, enabling the measurement of the three dimensional shape of the object in a rapid and accurate manner.

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

Abstract: Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract: A method of determining the position of an alignment mark on a substrate, the alignment mark having first and second segment, the method including illuminating the alignment mark with radiation, detecting radiation diffracted by the alignment mark and generating a resulting alignment signal. The alignment signal has a first component received during illumination of the first segment only, a second component received during illumination of the second segment only, and a third component received during simultaneous illumination of both segments. The positions of the segments are determined using the first component, the second component and the third component of the alignment signal.

Abstract: Disclosed is a method for manufacturing black matrix and spacer, which includes steps of: providing a base substrate and coating the base substrate with a black photoresist layer; coating a transparent photoresist layer on black photoresist layer; providing a multi-tone mask plate including a first light-transmitting area and a second light-transmitting area, in which the transparent photoresist layer and the black photoresist layer both include a first section aligning with first light-transmitting area and a second section aligning with second light-transmitting area; using the multi-tone mask plate to expose transparent photoresist layer and black photoresist layer, in which the transparent photoresist layer in the first section forms a main spacer, and the black photoresist layer in the first section forms a first black matrix, the transparent photoresist layer in the second section forms an auxiliary spacer, and the black photoresist layer in the second section forms a second black matrix.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to overlay structures and methods of manufacture. The method includes locating a first plurality of offset dummy features in a first layer; locating a second plurality of offset dummy features in a second layer; measuring a distance between the first plurality of offset dummy features and the second plurality of offset dummy features; and determining that the first layer or the second layer is shifted with respect to one another based on the measurement.

Abstract: A lithographic apparatus includes an alignment sensor configured to determine the position of an alignment target having a periodic structure. The alignment sensor includes a demultiplexer to demultiplex a number of intensity channels. The demultiplexer includes a number of stages arranged in series and a number of demultiplexing components, each demultiplexing component operable to divide an input radiation beam into two radiation beam portions. The first stage has a first demultiplexing component that is arranged to receive as an input radiation beam an incident radiation beam. Each successive stage is arranged such that it has twice the number of demultiplexing components as a preceding stage, each demultiplexing component of each stage after the first stage receiving as an input one of the radiation beam portions output from a demultiplexing component of the preceding stage.

Abstract: Disclosed are mask definition tools, apparatus, methods, systems and computer program products configured to process data representing a semiconductor fabrication mask. A non-limiting example of a method includes performing a decomposition process on a full Transmission Cross Coefficient (TCC) using coherent optimal coherent systems (OCS) kernels; isolating a residual TCC that remains after some number of coherent kernels are extracted from the full TCC; and performing at least one decomposition process on the residual TCC using at least one loxicoherent system. The loxicoherent system uses a plurality of distinct non-coherent kernel functions and is a compound system containing a paired coherent system and an incoherent system that act in sequence. An output of the coherent system is input as a self-luminous quantity to the incoherent system, and the output of the incoherent system is an output of the loxicoherent system.

Abstract: A method is provided for producing a weld seam on or at a first component, or in the region of a first component, from which at least one spherical or sphere-like element projects. The position of the at least one spherical or sphere-like element is detected using an optoelectronic detection device and corresponding position data are generated. The weld seam is produced contact free using an electronically-controlled laser welding device that is arranged at a distance from the first component and said at least one spherical or sphere-like element. The laser welding device is controlled on the basis of, or using, the position data of the spherical or sphere-like element.

Abstract: Methods and apparatuses are provided that determine an offset between actual feature/mark locations and the designed feature/mark locations in a maskless lithography system. For example, in one embodiment, a method is provided that includes opening a camera shutter in a maskless lithography system. Light is directed from a configuration of non-adjacent mirrors in a mirror array towards a first substrate layer. An image of the first substrate layer on a camera is captured and accumulated. Light is directed and images are captured repeatedly using different configurations of non-adjacent mirrors to cover an entire field-of-view (FOV) of the camera on the first substrate layer. Thereafter, the camera shutter is closed and the accumulated image is stored in memory.

Abstract: A method to address overlay accuracy compensation using finFET cut isolation revisions is disclosed. For an integrated circuit (IC) layout including at least a portion of an active region including a plurality of gates extending over a plurality of fins, prior to optical proximity correction of the IC layout: the method determines a number of fins to be cut with same source/drain connection by a fin cut isolation opening, and determines a fin cut isolation pitch in the gate length direction of the plurality of gates. The method revises a size of a fin cut isolation opening in the IC layout based on a number of fins to be cut with same source/drain connection by the fin cut isolation opening and the fin cut isolation pitch in the gate length direction. The revision in size of the fin cut isolation compensates for overlay inaccuracy.

Abstract: An apparatus for checking whether a table is at tilt is provided, which is capable of checking whether a table is at tilt from an initially-set position or not even during an operation of an inspecting apparatus. Accordingly, the apparatus for checking whether a table is at tilt, which is for use in a camera module inspecting apparatus is provided, in which the camera module inspecting apparatus includes a fixing part; a plurality of test zones provided above the fixing part; a table movable to sequentially guide a camera module sequentially to the respective test zones; and a chart respectively provided in one or more of the test zones among the plurality of test zones, and the table tilt checking apparatus includes a first position mark marked on the table and a first mark photographer provided on the fixing part, facing toward the first position mark.

Abstract: A method of aligning a pair of complementary diffraction patterns having a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns obtained from performance of a metrology process on a structure formed by a lithographic process. The method includes performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage includes: interpolating measured values of the first complementary diffraction pattern over at least a portion of a detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern.

Abstract: Metrology methods and systems are provided, in which the detected image is split at a field plane of the collection path of the metrology system's optical system into at least two pupil plane images. Optical elements such as prisms may be used to split the field plane images, and multiple targets or target cells may be measured simultaneously by spatially splitting the field plane and/or the illumination sources and/or by using two polarization types. The simultaneous capturing of multiple targets or target cells increases the throughput of the disclosed metrology systems.

Abstract: Disclosed are mask definition tools, apparatus, methods, systems and computer program products configured to process data representing a semiconductor fabrication mask. A non-limiting example of a method includes performing a decomposition process on a full Transmission Cross Coefficient (TCC) using coherent optimal coherent systems (OCS) kernels; isolating a residual TCC that remains after some number of coherent kernels are extracted from the full TCC; and performing at least one decomposition process on the residual TCC using at least one loxicoherent system. The loxicoherent system uses a plurality of distinct non-coherent kernel functions and is a compound system containing a paired coherent system and an incoherent system that act in sequence. An output of the coherent system is input as a self-luminous quantity to the incoherent system, and the output of the incoherent system is an output of the loxicoherent system.

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

Abstract: A semiconductor fabrication system includes a target design device and a multi-stage fabrication tool configured to fabricate one or more layers of a sample using the fabrication process. The target design device receives metrology design rules associated with a metrology tool in which the metrology design rules include criteria for one or more physical attributes of metrology targets measurable with the metrology tool. The target design device may further receive process design rules associated with a fabrication process in which the process design rules include criteria for determining process stages of the fabrication process required to fabricate structures with selected physical attributes.

Abstract: An alignment system is equipped with: an alignment system having an objective optical system, an irradiation system and a beam receiving system; and a calculation system, the objective optical system including an objective transparent plate that faces a wafer movable in a Y-axis direction, the irradiation system irradiating a grating mark provided at the wafer with measurement beams via the objective transparent plate while scanning the measurement beams in the Y-axis direction, the beam receiving system receiving diffraction beams from the grating mark of the measurement beams via the objective optical system, and the calculation system obtaining positional information of the grating mark on the basis of the output of the beam receiving system, wherein the objective transparent plate deflects or diffracts the diffraction beams diffracted at the grating mark toward the beam receiving system.

Abstract: A position measurement system configured to measure a position of an object. The system includes an optical system to obtain a first measurement wave and a second measurement wave from a radiation source, and to allow the first and second measurement wave to at least partially interfere with each other after interaction of at least one of the first and second measurement wave with the object to form a first detection beam. The system further includes a first detector to receive the first detection beam. The system also has a processing unit configured to receive an output from the first detector and to determine a signal representative for the position of the object from the output, wherein the optical system includes a phase modulator configured to modulate a phase difference between the first measurement wave and the second measurement wave.

Abstract: The present invention provides a position detection apparatus including a detection unit configured to detect moire caused by overlap between a first diffraction grating including patterns arrayed in a first direction and a second diffraction grating including patterns arrayed in the first direction, and a processing unit configured to obtain a relative position of the first diffraction grating and the second diffraction grating based on the moire, wherein a width of an end pattern of patterns included in at least one of the first diffraction grating and the second diffraction grating in the first direction is smaller than widths of remaining patterns of the at least one diffraction grating in the first direction.

Abstract: A positional calibration is enabled between an imaging device and a stage structure including X and Y stages that move independently of each other. An image processing apparatus performs the positional calibration of a camera coordinate system for an imaging device with a stage coordinate system using a reference position in a first image coordinate space indicating a position of a mark in an image captured when an X-stage is at a reference position, a displaced position in the first image coordinate space indicating a position of the mark in an image captured when the X-stage is at a first displaced position to which the X-stage moves in X-direction from the first reference position, and a virtual position in the first image coordinate space indicating a position of the mark in an image calculated using the characteristic value of a Y-stage.

Abstract: A method to address overlay accuracy compensation using finFET cut isolation revisions is disclosed. For an integrated circuit (IC) layout including at least a portion of an active region including a plurality of gates extending over a plurality of fins, prior to optical proximity correction of the IC layout: the method determines a number of fins to be cut with same source/drain connection by a fin cut isolation opening, and determines a fin cut isolation pitch in the gate length direction of the plurality of gates. The method revises a size of a fin cut isolation opening in the IC layout based on a number of fins to be cut with same source/drain connection by the fin cut isolation opening and the fin cut isolation pitch in the gate length direction. The revision in size of the fin cut isolation compensates for overlay inaccuracy.

Abstract: The present invention provides an imprint apparatus which forms a pattern in an imprint material on a substrate by using a mold, the apparatus including a tilt unit configured to tilt the mold and the substrate relatively, a detection unit configured to detect an interference pattern between light reflected by the mold and light reflected by the substrate, and a control unit configured to control, based on the interference pattern detected by the detection unit in a state in which the mold and the imprint material on the substrate are in contact with each other, the tilt unit to reduce relative tilts between the mold and the substrate in the state.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A laser processing device is provided, including: a laser beam irradiating apparatus irradiating a laser beam to a marked object; an angle adjusting apparatus connected with the laser beam irradiating apparatus to adjust an irradiation angle of the laser beam; a photographing apparatus photographing an area where the laser beam is irradiated; and a guide beam reflective mirror positioned on a movement path of the laser beam, in which the laser beam is a processing laser beam or a guide beam which marks the marked object.

Abstract: Methods and systems for use of a three dimensional measurement laser are disclosed. An example method can comprise receiving, at a laser measuring device, an article (e.g., a flooring article) having a plurality of faces, the article being conveyed in a direction. At least a portion of a first face and a second face of the plurality of faces of the article can be irradiated with a laser of the laser measuring device to measure one or more profile dimensions associated with the first and second faces of the article. The measured profile dimensions associated with the first face and the profile dimensions associated with the second face are compared to predefined reference dimensions. In response to a difference between measured profile dimensions associated with the first face and the second face and the predefined reference dimensions exceeding a threshold value, the article can be determined to be defective.

Abstract: This invention relates to systems and methods for imaging sample materials within a microfluidic device during an assay reaction process. In accordance with certain aspects of the invention, images are formed with a pixel array and a region of interest (“ROI”) is defined within the pixel array. Image values, such as fluorescent intensity, can be computed as averages of individual pixel values within the ROI. Where the ROI is subject to non-uniform conditions, such as non-uniform heating, the ROI can be divided into sub-ROIs which are sufficiently small that the condition is uniform within the sub-ROI.

Abstract: Methods and systems are provided, which identify specified metrology target abnormalities using selected metrics and classify the identified target abnormalities geometrically to link them to corresponding sources of error. Identification may be carried out by deriving target signals such as kernels from specified regions of interest (ROIs) from corresponding targets on a wafer, calculating the metrics from the target signals using respective functions and analyzing the metrics to characterize the targets.

Abstract: Realized is a bonding method which makes it possible to cause an angle formed between a front surface of an optical element and an upper end surface of a housing side wall to accurately match a design objective value. The bonding method includes the steps of (a) placing an optical element (12) on a jig (2) so that a front surface (12a) of the optical element (12) is in surface contact with a first flat surface (23a) of the jig (2); and (b) placing a housing (11) on the jig (2) so that (i) an upper end surface (11a1) of a side wall (11a) of the housing (11) is in surface contact with a second flat surface (21a) of the jig (2) and (ii) a bottom plate (11b) of the housing (11) is in contact with a back surface (12b) of the optical element (12) via an adhesive (15).

Abstract: Disclosed are mask definition tools, apparatus, methods, systems and computer program products configured to process data representing a semiconductor fabrication mask. A non-limiting example of a method includes performing a decomposition process on a full Transmission Cross Coefficient (TCC) using coherent optimal coherent systems (OCS) kernels; isolating a residual TCC that remains after some number of coherent kernels are extracted from the full TCC; and performing at least one decomposition process on the residual TCC using at least one loxicoherent system. The loxicoherent system uses a plurality of distinct non-coherent kernel functions and is a compound system containing a paired coherent system and an incoherent system that act in sequence. An output of the coherent system is input as a self-luminous quantity to the incoherent system, and the output of the incoherent system is an output of the loxicoherent system.

Abstract: A scatterometry measurement system includes an objective lens with a central obscuration and an illumination source configured to illuminate a scatterometry target through the objective lens with a first illumination beam at a first illumination angle and a second illumination beam at a second illumination angle in which the scatterometry target includes periodic structures located in at least two layers. The objective lens collects at least one diffracted order from the first illumination beam and at least one diffracted order from the second illumination beam such that the at least one diffracted order from the first illumination beam and the at least one diffracted order from the second illumination beam have a non-overlapping distribution in a portion of an imaging pupil plane not blocked by the central obscuration.

Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.

Abstract: Disclosed herein is a wafer processing method for removing an annular reinforcing portion from a wafer having a device area, the annular reinforcing portion being formed around the device area. The wafer processing method includes the steps of supporting the wafer through an adhesive tape to an annular frame, forming a mark corresponding to a notch at a position radially inside a boundary portion between the annular reinforcing portion and the device area, cutting the boundary portion together with the adhesive tape to thereby separate the annular reinforcing portion from the device area, and moving the annular reinforcing portion supported through the adhesive tape to the annular frame away from a holding table to thereby remove the annular reinforcing portion from the wafer.

Abstract: A metrology target of a semiconductor device is provided. The metrology target includes a substrate including first and second layers. The first layer includes a first grating, a second grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the second grating. The second layer is formed over the first layer and includes a third grating and a fourth grating. The first, second, third and fourth gratings are formed based on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and second grating, respectively. The first grating and the third grating are formed with a first positional offset which is along a first direction. The second grating and the fourth grating are formed with a second positional offset which is along a second direction which is opposite to the first direction.

Abstract: A semiconductor device comprises a first semiconductor wafer including a cavity formed in the first semiconductor die. A second semiconductor die is bonded to the first semiconductor die over the cavity. A first transistor includes a portion of the first transistor formed over the cavity.

Abstract: A method for measuring wafer alignment is provided. The method includes providing a plurality of first mark patterns extending in a first direction on a wafer, providing at least one second mark pattern on the first mark patterns such that it overlaps and intersects the first mark patterns, irradiating an optical signal onto the first mark patterns and the second mark pattern and obtaining coordinates of the second mark pattern by detecting signals from the second mark pattern.

Abstract: An image based overlay measurement is performed using an overlay target that includes shifted overlying gratings. The overlay target is imaged and an asymmetry is measured in the image of the overlaid gratings. The asymmetry is used to determine the overlay error. For each measurement direction, the overlay target may include two or more overlay measurement pads with different offsets between the top and bottom gratings. The measured asymmetries and offsets in the overlay measurement pads may be used to determine the overlay error, e.g., using self-calibration. The pitch and critical dimensions of the overlay target may be optimized to produce a greatest change of symmetry with overlay error for a numerical aperture and wavelength of light used by the image based metrology device.

Abstract: The present invention discloses a concentrator photovoltaic module and the alignment device and method thereof. A laser source is disposed on a top surface of an alignment device at a tilt angle. According to the optical alignment points on a circuit board, the circuit board and the concentrating lens can be aligned and thus completing assembling a concentrator photovoltaic module. The alignment device and method for concentrator photovoltaic module requires no optically inactive region to complete alignment. Thereby, the utilization of the sunlight and the output power efficiency of the concentrator photovoltaic module can be enhanced.

Abstract: The present invention discloses a concentrator photovoltaic module and the alignment device and method thereof. A laser source is disposed on a top surface of an alignment device at a tilt angle. According to the optical alignment points on a circuit board, the circuit board and the concentrating lens can be aligned and thus completing assembling a concentrator photovoltaic module. The alignment device and method for concentrator photovoltaic module requires no optically inactive region to complete alignment. Thereby, the utilization of the sunlight and the output power efficiency of the concentrator photovoltaic module can be enhanced.

Abstract: A coordinated beamforming method and apparatus based on partial interference alignment, the method includes: selecting an optimal partial interference alignment mode from selectable partial interference alignment modes of terminals covered by base stations in a coordinating cluster of a coordinated multiple points transmission according to a chordal distance criterion; and transmitting, by the base stations, signals to the terminals by adopting the optimal partial interference alignment mode.