Abstract: An exposure method comprises: a first detection step of detecting a position of a first mark by a first scope; a second detection step of detecting a position of a second mark by a second scope having a magnification higher than the first scope; a first calculation step of calculating a first correction value based on the detection results obtained in the first and second detection steps; a third detection step of detecting a position of a third mark by the second scope after the substrate is aligned based on the first correction value calculated in the first calculation step; a second calculation step of calculating a second correction value based on the detection results obtained in the second and third detection steps; and an exposure step of exposing the substrate after the substrate is aligned based on the second correction value calculated in the second calculation step.

Abstract: A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.

Abstract: An exposure apparatus includes a controller configured to calculate a position of an alignment mark detected by a detector, to approximate a deformation of a substrate by using an approximation equation, to calculate a correction amount of each of the plurality of shots, and to control driving of a stage in exposing each shot based on a correction amount that is calculated. The approximation equation is defined as a sum of a first term representative of a deformation of the entire substrate, and at least one of a second term representative of a distortion of a shot arrangement and a third term representative of a shot shape.

Abstract: An alignment feature disposed on a substrate, the alignment feature including a first lithographic pattern having a first aggregate geometric center point defined by a first sub-pattern comprising alignment marks having a first sub-pattern geometric center point arranged a distance (d0) in a first direction from the first aggregate geometric center point, and a second sub-pattern comprising alignment marks having a second sub-pattern geometric center point arranged the distance d0 in a reciprocal direction of the first direction from the first aggregate geometric center point.

Abstract: A method makes a discrete adjustment to static alignment of a laser beam in a machine for selectively irradiating conductive links on or within a semiconductor substrate using the laser beam. The laser beam propagates along a beam path having an axis extending from a laser to a laser beam spot at a location on or within the semiconductor substrate. The method generates, based on at least one measured characteristic of the laser beam, at least one signal to control an adjustable optical element of the machine affecting the laser beam path. The method also sends said at least one signal to the adjustable optical element. The method then adjusts the adjustable optical element in response to said at least one signal so as to improve static alignment of the laser beam path axis.

Abstract: A method of determining an overlay error in which asymmetry of a first order of a diffraction pattern is modeled as being a weighted sum of harmonics. Both the first order harmonic and higher order harmonics are non-negligible and weights for both are calculated. The weights are calculated using three or more of sets of superimposed patterns using a least mean square method.

Abstract: A manufacturing method of a semiconductor device includes the steps of: forming first and second alignment marks by forming first and second alignment mark grooves on a first surface of a semiconductor substrate and filling the grooves with a material different from the semiconductor substrate; forming a first element on the first surface in alignment using the first alignment mark; bonding a support substrate to the first surface; reversing a bonded structure of the support substrate and the semiconductor substrate around a predetermined axis and thinning the semiconductor substrate from a second surface side of the semiconductor substrate at least until a thickness with which a position of the second alignment mark is detected by reflected light obtained by application of alignment light from the second surface side of the semiconductor substrate is obtained; and forming a second element on the second surface in alignment using the second alignment mark.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: An overlay error between two successive layers produced by a lithographic process on a substrate is determined by using the lithographic process to form at least one periodic structure of a same pitch on each of the layers. One or more overlaid pairs of the periodic structures are formed in parallel, but offset relative to each other. A spectrum, produced by directing a beam of radiation onto the one or more pairs of periodic structures is measured. One or more portions of the spectrum are determined in which the relationship between the offset between the one or more pairs of periodic structures and the resultant variation in measured intensity of the spectrum at the one or more portions is more linear than the relationship outside the one or more portions. The offset between the one or more pairs of periodic structures on the basis of intensity measurements of the spectrum in the one or more portions of the spectrum is determined and used to determine the overlay error.

Abstract: Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.

Abstract: In one embodiment, a metrology target for determining a relative shift between two or more successive layers of a substrate may comprise; an first structure on a first layer of a substrate and an second structure on a successive layer to the first layer of the substrate arranged to determine relative shifts in alignment in both the x and y directions of the substrate by analyzing the first structure and second structure overlay.

Abstract: An exposure apparatus includes a controller configured to calculate a position of an alignment mark detected by a detector, to approximate a deformation of a substrate by using an approximation equation, to calculate a correction amount of each of the plurality of shots, and to control driving of a stage in exposing each shot based on a correction amount that is calculated. The approximation equation is defined as a sum of a first term representative of a deformation of the entire substrate, and at least one of a second term representative of a distortion of a shot arrangement and a third term representative of a shot shape.

Abstract: A lithographic apparatus has a plurality of different alignment arrangements that are used to perform an alignment measurement on the same mark(s) by: detecting a first alignment mark located on an object and producing a first alignment signal by a first detector; detecting the first mark and producing a second alignment signal by a second detector using a different alignment measurement than the first detector; receiving the first alignment signal from the first detector; calculating a first position of the at least first mark based on the first alignment signal; receiving the second alignment signal from the second detector; calculating a further first position of the at least first mark based on the second alignment signal.

Abstract: Imprint lithography benefits from precise alignment between a template and a substrate during imprinting. A moiré signal resulting from indicia on the template and the substrate are acquired by a system comprising a line-scan camera and a digital micromirror device (DMD) which provides a high bandwidth, low-latency signal. Once acquired, the moiré signal may be used directly to align the template and the substrate without need for discrete position/angle encoders.

Abstract: Provided is a substrate having an alignment mark, methods of aligning wafers and fabricating semiconductors. An alignment method of a wafer comprises providing a wafer on a wafer stage of a photolithography apparatus, irradiating light to the alignment mark, collecting reflected light from the alignment mark, analyzing optical information of the collected light, and determining a location of the wafer based on the analyzed optical information, wherein the wafer comprises a first surface having an alignment mark, the alignment mark including a first plurality of alignment patterns in a first row, and a second plurality of alignment patterns in a second row, the second plurality of alignment patterns being adjacent to the first plurality of alignment patterns, wherein the first plurality of alignment patterns are arranged in a row direction at a first pitch, and the second plurality of alignment patterns are arranged in the row direction at a second pitch different from the first pitch.

Abstract: A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

Abstract: A method for analysis of an object dyed with fluorescent coloring agents. Separately fluorescing visible molecules or nanoparticles are periodically formed in different object parts, the laser produces the oscillation thereof which is sufficient for recording the non-overlapping images of the molecules or nanoparticles and for decoloring already recorded fluorescent molecules, wherein tens of thousands of pictures of recorded individual molecule or nanoparticle images, in the form of stains having a diameter on the order of a fluorescent light wavelength multiplied by a microscope amplification, are processed by a computer for searching the coordinates of the stain centers and building the object image according to millions of calculated stain center co-ordinates corresponding to the co-ordinates of the individual fluorescent molecules or nanoparticles. Two-dimensional and three-dimensional images are provided for proteins, nucleic acids and lipids with different coloring agents.

Abstract: According to one embodiment, a method is disclosed for determining position of an auxiliary pattern on a photomask. The method can include generating a first set for each of three or more imaging positions of an exposure optical system. The method can include generating a second set for each of the three or more imaging positions by inverse Fourier transforming each of the first set. The method can include calculating a second order differential with respect to the imaging position of an index indicating amplitude of light belonging to the second set. In addition, the method can include extracting a position where the second order differential assumes an extremal value on an imaging plane of the exposure optical system. At least part of positions on the photomask each corresponding to the position assuming the extremal value on the imaging plane is used as a formation position of the auxiliary pattern.

Abstract: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.

Abstract: A drive system drives a movable body, based on measurement results of a first measurement system which measures the position of the movable body in an XY plane by irradiating a measurement beam from an arm member on a grating placed on a surface parallel to the XY plane of the movable body. In this case, because a configuration in which the arm member irradiates a measurement beam on the grating is employed, there is no adverse effect due to the drive of the moving body, unlike the case when an encoder system is arranged on a stage surface plate. Accordingly, it becomes possible to drive the movable body with good precision.

Abstract: A measurement system includes a sensor arranged to co-operate with a first pattern arranged on a structure of the measurement system to determine a first position quantity of the sensor relative to the structure, and arranged to co-operate with a second pattern arranged on the structure to determine a second position quantity of the sensor relative to the structure, wherein the first and second patterns are arranged on different surfaces of the structure.

Abstract: A method for designing a two-dimensional array overlay target comprises the steps of: selecting a plurality of two dimensional array overlay targets having different overlay errors; calculating a deviation of a simulated diffraction spectrum for each two-dimensional array overlay target; selecting an error-independent overlay target by taking the deviations of the simulated diffraction spectra into consideration; and designing a two dimensional array overlay target based on structural parameters of the error-independent overlay target.

Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

Abstract: A method of determining a position of a substrate relative to an imprint template is described, wherein the imprint template has at least three gratings and the substrate has at least three gratings positioned such that each imprint template grating forms a composite grating with an associated substrate grating, the at least three imprint template gratings and associated substrate gratings having offsets relative to one another. The method includes detecting an intensity of radiation which is reflected by the three composite gratings, and using the detected intensities to determine displacement of the substrate or imprint template from a position.

Abstract: A laser beam direct imaging apparatus and an imaging method which can precisely determine a back-surface-side position with respect to a front-surface-side position even if any kind of photosensitive material is used. In the laser direct imaging apparatus, a laser beam is deflected toward a main scanning direction (X-axis direction) while a workpiece mounted on a table is moved in a sub-scanning direction (Y-axis direction) so that a pattern is imaged on the surface of the workpiece. Hollow pins are disposed on the table so that the tips of the hollow pins 20 project over the surface of the table by a predetermined distance. The workpiece is sucked onto the table so that indentations (indentations by the tips of the hollow pins) are formed on the back surface of the workpiece. When a pattern is imaged on the back surface, imaging is performed with reference to the indentations.

Abstract: The present invention relates to an alignment film printing mask, and more particularly, to a jig for an alignment film printing mask. A jig according to the present invention includes a plurality of supporting members each having at least one bent portion, arranged at regular intervals along a width direction of the alignment film printing mask for supporting the alignment film printing mask, at least one connection member for connecting the supporting members, and fastening units for securing the alignment film printing mask supported by the supporting members.

Abstract: A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset FO. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve. The method according to an embodiment of the invention may result in a focus-versus alignment shift sensitivity up to 50 times higher (typically dX,Y/dZ=20) than conventional approaches.

Abstract: A method and system are presented for use in characterizing properties of an article having a structure comprising a multiplicity of sites comprising different periodic patterns. The method comprises: providing a theoretical model of prediction indicative of optical properties of different stacks defined by geometrical and material parameters of corresponding sites, said sites being common in at least one of geometrical parameter and material parameter; performing optical measurements on at least two different stacks of the article and generating optical measured data indicative of the geometrical parameters and material composition parameters for each of the measured stacks; processing the optical measured data, said processing comprising simultaneously fitting said optical measured data for the multiple measured stacks with said theoretical model and extracting said at least one common parameter, thereby enabling to characterize the properties of the multi-layer structure within the single article.

Abstract: An alignment system for optical lithography uses cameras fixed to a movable stage and to a lithography unit to view unique microscopic non-uniformities that are inherent to the surface of a work piece, e.g., metal or ceramic microcrystalline grains, for position referencing. Stage cameras image two sites on the work piece through windows in the stage to establish original position templates. After the work piece has been repositioned, e.g., reversed topside-down, the same two sites are again viewed and template matching establishes the transformed coordinates of the work piece, e.g. by a lithography unit camera under which the stage moves to approximate site locations. Two corner cameras can serve as a coarse positioning mechanism. The alignment system is particular useful for backside alignment in printed circuit board lithography.

Abstract: A mark structure for measuring the alignment accuracy between a former layer and a latter layer with electron beam inspection (EBI) is described. The mark structure includes multiple divisions, each of which includes at least one region that includes multiple parts each disposed with a pair of a pattern of the former layer and a pattern of the latter layer. In each region, all of the parts have the same distance in a direction between the pattern of the former layer and the pattern of the latter layer. The distance in the direction is varied over the regions of the divisions of the mark structure.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.

Abstract: Spectra for diffraction based overlay (DBO) in orthogonal directions, i.e., along the X-axis and Y-axis, are acquired in parallel. A broadband light source produces unpolarized broadband light that is simultaneously incident on X-axis and Y-axis DBO targets. A polarization separator, such as a Wollaston prism or planar birefringent element, receives diffracted light from the X-axis and Y-axis DBO targets and separates the TE and TM polarization states of the diffracted light. A detector simultaneously detects the TE and TM polarization states of the diffracted light for both the X-axis DBO target and the Y-axis DBO target as a function of wavelength.

Abstract: A method is provided for determining the relative overlay shift of stacked layers, said method comprising the steps of: a) providing a reference image including a reference pattern that comprises first and second pattern elements; b) providing a measurement image of a measurement pattern, which comprises a first pattern element formed by a first one of the layers and a second pattern element formed by a second one of the layers; c) weighting the reference or measurement image such that a weighted first image is generated, in which the first pattern element is emphasized relative to the second pattern element; d) determining the relative shift of the first pattern element on the basis of the weighted first image and of the measurement or reference image not weighted in step c); e) weighting the reference or measurement image such that a weighted second image is generated, in which the second pattern element is emphasized relative to the first pattern element; f) determining the relative shift of the second pat

Abstract: An apparatus for manufacturing a display panel includes an arriving part in which an unfinished display panel is disposed. The apparatus has at least one light transmitting part, a mold which is positioned on the arriving part and which includes at least one alignment key and a pattern forming part, a mold driver which drives the mold, and an alignment sensor which is positioned under the arriving part and which determines whether the display panel and the mold are erroneously aligned through the light transmitting part. Therefore, it is possible to efficiently and accurately pattern a specific material onto the display panel through an imprint lithography process using a pressing mold.

Abstract: An apparatus comprises a grouping unit dividing substrates into groups, and determining reference and non-reference substrates for each group, a measurement unit measuring a first number of points for the reference substrate, and measuring a second number, smaller than the first number, of points for the non-reference substrate, a correction value determining unit determining a first correction value to position the reference substrate, and a second correction value to position the non-reference substrate, and an exposure unit exposing the reference substrate by positioning it based on the first correction value, and exposing the non-reference substrate by positioning it based on the second correction value, the correction value determining unit determining the first correction value based on the measurement of the reference substrate, and determining the second correction value based on the measurement of the non-reference substrate, and the measurement of the reference substrate or the first correction valu

Abstract: A method for designing a two-dimensional array overlay target set comprises the steps of: selecting a plurality of two-dimensional array overlay target sets having different overlay errors; calculating a deviation of a simulated diffraction spectra for each two-dimensional array overlay target set; selecting a sensitive overlay target set by taking the deviations of the simulated diffraction spectra into consideration; and designing a two-dimensional array overlay target set based on the structural parameters of the sensitive overlay target set.

Abstract: In an embodiment, a stage system calibration method includes moving the stage relative to an encoder grid in response to a setpoint signal and measuring a position of the stage by a sensor head cooperating with the encoder grid. The position of the stage is controlled by a stage controller. A signal representative of a difference between the setpoint signal and the position of the stage as measured by the sensor head is registered. The stage system is calibrated from the registered signal representative of the difference.

Abstract: A method of determining the location of a lithographic substrate relative to an imprint template is disclosed.

Abstract: Provided is a transport method comprising judging whether there is a possibility that misalignment greater than or equal to a threshold value occurs between substrates to be layered that are held by a pair of substrate holders aligned and stacked by an aligning section, the misalignment occurring when the pair of substrate holders is transported from the aligning section to a pressure applying section; and if the judgment indicates that there is the possibility of misalignment, transporting the pair of substrate holders to a region other than the pressure applying section. Whether there is the possibility of misalignment may be judged based on acceleration of the substrate holders. Whether there is the possibility of misalignment may be judged based on acceleration of a transporting section that transports the substrate holders. Whether there is the possibility of misalignment may be judged based on relative positions of the substrate holders.

Abstract: A substrate stage for an immersion type lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate, the substrate stage being constructed to hold the substrate and including at least a sensor for sensing the patterned radiation beam, the sensor including an at least partially transmissive layer having a front side facing the incoming radiation beam and a back side opposite the front side, wherein the back side is provided with at least a sensor mark to be subjected to the radiation beam transmitted through the layer.

Abstract: A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.

Abstract: In a method of obtaining an optical constant of each the films of a film-stacked structure formed on a substrate, a basic process obtains an optical constant of each of the films by successively providing the films one by one as a target film from bottom to top and obtaining an optical constant of the target film by using a previously obtained optical constant of a below-located film that is located below the target film and a re-obtaining process re-obtains the optical constant of each of the films by correcting the previously obtained optical constant of the below-located film and the optical constant of the target film obtained in the basic process.

Abstract: A system for alignment measurement for a rolling embossed double-sided optical film, the system comprising: a first roller with a first brightness enhancement film pattern and a first alignment pattern thereon, a second roller with a second brightness enhancement film pattern and a second alignment pattern thereon; a measuring unit for measuring diffraction patterns in the first alignment region and the second alignment region, respectively; and a control unit electrically connected to the first roller, the second roller and the measuring unit to adjust the relative position between the first roller and the second roller according to the diffraction patterns measured by the measuring unit.

Abstract: An inspection apparatus and method for precisely detect an amount of misalignment of a component mounted on a panel through an adhesive which contains conductive particles. The inspection apparatus detects an amount of misalignment, from a predetermined mounting position, of a component mounted on a surface of a panel through an ACF, and includes: a visible light camera which captures an image of a panel recognition mark formed on the panel and a component recognition mark formed on the component; an obtaining unit which obtains, from the image captured by the camera, positions of feature points of the respective recognition marks; and a calculation unit which calculates an amount of misalignment of the feature point of the component recognition mark in the image captured by the camera from a predetermined position that is determined using the position of the feature point of the panel recognition mark as a reference.

Abstract: A lithographic apparatus according to one embodiment of the invention includes an alignment system for aligning a substrate or a reticle. The alignment system includes a radiation source configured to illuminate an alignment mark on the substrate or on the reticle, the alignment mark comprising a maximum length sequence or a multi periodic coarse alignment mark. An alignment signal produced from the alignment mark is detected by a detection system. A processor determines an alignment position of the substrate or the reticle based on the alignment signal.

Abstract: A lithographic apparatus according to one embodiment of the invention includes an alignment system for aligning a substrate or a reticle. The alignment system includes a radiation source configured to illuminate an alignment mark on the substrate or on the reticle, the alignment mark comprising a maximum length sequence or a multi periodic coarse alignment mark. An alignment signal produced from the alignment mark is detected by a detection system. A processor determines an alignment position of the substrate or the reticle based on the alignment signal.

Abstract: A mirror block on which moving gratings are arranged is fixed to the lower surface of a stage. Fixed gratings are placed on the upper surface of a stage platform that is opposed to the lower surface of the stage. A Y encoder that measures Y positional information of the stage is configured including the moving gratings and the fixed gratings. Similarly, an X encoder that measures X positional information of the stage is configured including the moving gratings and the fixed grating.

Abstract: An alignment mark comprising a periodic structure formed by mark lines is described. In an embodiment, the alignment mark is formed in a scribe lane of a substrate, the scribe lane extending in a scribe lane direction. The alignment mark includes: a first area including a first periodic structure formed by first mark lines extending in a first direction, the first direction being at a first angle ? with respect to the scribe lane direction: 0°<?<90° and a second area comprising second periodic structure formed by second mark lines extending in a second direction, the second direction being at a second angle ? with respect to the scribe lane direction: ?90°??<0°.

Abstract: An overlay measurement apparatus includes a stage on which a wafer comprising first and second overlay measurement keys, which are separated from each other, is placed. A nonlinear medium receives a reference beam and first and second diffracted beams respectively generated by the first and second overlay measurement keys. A detector detects a synthesized beam emitted from the nonlinear medium.

Abstract: An optical-component fabricating method includes arranging a mask that has both an optical component pattern and an alignment mark pattern and a wafer that is developed through the mask at predetermined positions; exposing the optical component pattern and the alignment mark pattern onto the wafer; developing the alignment mark pattern that is exposed on the wafer; observing a position of the developed alignment mark pattern and moving the wafer in accordance with the position; repeating the exposing, the developing, and the moving a predetermined number of times; developing all the optical component patterns on the wafer; and etching the developed optical component patterns.